TW200707095A - Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same - Google Patents

Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same

Info

Publication number
TW200707095A
TW200707095A TW095124831A TW95124831A TW200707095A TW 200707095 A TW200707095 A TW 200707095A TW 095124831 A TW095124831 A TW 095124831A TW 95124831 A TW95124831 A TW 95124831A TW 200707095 A TW200707095 A TW 200707095A
Authority
TW
Taiwan
Prior art keywords
same
photoresist composition
thin film
film transistor
transistor array
Prior art date
Application number
TW095124831A
Other languages
English (en)
Other versions
TWI395056B (zh
Inventor
Jeong-Min Park
Hi-Kuk Lee
Jin-Ho Ju
Woo-Seok Jeon
Doo-Hee Jung
Dong-Min Kim
Ki-Sik Choi
Original Assignee
Samsung Electronics Co Ltd
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd, Dongjin Semichem Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200707095A publication Critical patent/TW200707095A/zh
Application granted granted Critical
Publication of TWI395056B publication Critical patent/TWI395056B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Crystal (AREA)
TW095124831A 2005-07-08 2006-07-07 光阻組成物，使用該光阻組成物形成薄膜圖案之方法以及使用該光阻組成物製造薄膜電晶體陣列面板之方法 TWI395056B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050061606A KR101240643B1 (ko) 2005-07-08 2005-07-08 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법

Publications (2)

Publication Number Publication Date
TW200707095A true TW200707095A (en) 2007-02-16
TWI395056B TWI395056B (zh) 2013-05-01

Family

ID=37597413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095124831A TWI395056B (zh) 2005-07-08 2006-07-07 光阻組成物，使用該光阻組成物形成薄膜圖案之方法以及使用該光阻組成物製造薄膜電晶體陣列面板之方法

Country Status (5)

Country Link
US (1) US7291439B2 (zh)
JP (1) JP4996886B2 (zh)
KR (1) KR101240643B1 (zh)
CN (1) CN1892426B (zh)
TW (1) TWI395056B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI465842B (zh) * 2008-03-04 2014-12-21 Dongjin Semichem Co Ltd 光阻組成物以及使用該組成物製造陣列基材之方法

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KR100495454B1 (ko) * 2002-03-27 2005-06-14 주식회사 코리아나화장품 피토라이트를 포함하는 미백 화장료 조성물
KR101157148B1 (ko) * 2005-08-08 2012-06-22 삼성전자주식회사 반도체 장치의 제조방법
KR101298940B1 (ko) * 2005-08-23 2013-08-22 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
KR101268424B1 (ko) * 2005-10-31 2013-05-28 에이지이엠코리아 주식회사 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
JP2007142388A (ja) * 2005-11-17 2007-06-07 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法
KR101293155B1 (ko) * 2006-02-01 2013-08-12 주식회사 동진쎄미켐 패턴 형성용 포토레지스트 조성물 및 이를 이용한 표시장치 패턴 형성 방법
KR101392291B1 (ko) * 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법
JP5155389B2 (ja) * 2008-04-10 2013-03-06 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及びそれを用いた感光性樹脂積層体
US8623231B2 (en) * 2008-06-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for etching an ultra thin film
KR101632965B1 (ko) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법
KR20130017615A (ko) * 2011-08-11 2013-02-20 삼성디스플레이 주식회사 포토레지스트 조성물, 이를 이용한 패턴의 형성 방법 및 표시 기판의 제조 방법
CN102610564B (zh) * 2012-02-07 2014-06-25 深圳市华星光电技术有限公司 Tft阵列基板的制作方法
JP2022038484A (ja) * 2020-08-26 2022-03-10 東京応化工業株式会社 エッチング方法、及び感光性樹脂組成物

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI465842B (zh) * 2008-03-04 2014-12-21 Dongjin Semichem Co Ltd 光阻組成物以及使用該組成物製造陣列基材之方法

Also Published As

Publication number Publication date
US7291439B2 (en) 2007-11-06
JP2007017987A (ja) 2007-01-25
US20070009833A1 (en) 2007-01-11
KR20070006346A (ko) 2007-01-11
KR101240643B1 (ko) 2013-03-08
JP4996886B2 (ja) 2012-08-08
TWI395056B (zh) 2013-05-01
CN1892426B (zh) 2011-12-21
CN1892426A (zh) 2007-01-10

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