TW200706619A - Polishing composition and method for defect improvement by reduced particle stiction on copper surface - Google Patents
Polishing composition and method for defect improvement by reduced particle stiction on copper surfaceInfo
- Publication number
- TW200706619A TW200706619A TW095120425A TW95120425A TW200706619A TW 200706619 A TW200706619 A TW 200706619A TW 095120425 A TW095120425 A TW 095120425A TW 95120425 A TW95120425 A TW 95120425A TW 200706619 A TW200706619 A TW 200706619A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing composition
- stiction
- copper surface
- reduced particle
- defect improvement
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 239000002245 particle Substances 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 230000007547 defect Effects 0.000 title 1
- -1 diamine compound Chemical class 0.000 abstract 1
- 125000001033 ether group Chemical group 0.000 abstract 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/147,531 US20060278614A1 (en) | 2005-06-08 | 2005-06-08 | Polishing composition and method for defect improvement by reduced particle stiction on copper surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200706619A true TW200706619A (en) | 2007-02-16 |
Family
ID=37056457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095120425A TW200706619A (en) | 2005-06-08 | 2006-06-08 | Polishing composition and method for defect improvement by reduced particle stiction on copper surface |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20060278614A1 (zh) |
| TW (1) | TW200706619A (zh) |
| WO (1) | WO2006132905A2 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9039925B2 (en) | 2012-04-10 | 2015-05-26 | Uwiz Technology Co., Ltd. | Polishing slurry composition |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200745313A (en) * | 2006-05-26 | 2007-12-16 | Wako Pure Chem Ind Ltd | Substrate etching liquid |
| WO2008032681A1 (fr) * | 2006-09-13 | 2008-03-20 | Asahi Glass Co., Ltd. | Agent de polissage pour dispositif à semi-conducteur en circuit intégré, procédé de polissage, et procédé de fabrication du dispositif à semi-conducteur en circuit intégré |
| WO2009073304A1 (en) * | 2007-12-05 | 2009-06-11 | 3M Innovative Properties Company | Buffing composition comprising a slubilized zirconium carboxylate and method of finishing a surface of a material |
| US20100096360A1 (en) * | 2008-10-20 | 2010-04-22 | Applied Materials, Inc. | Compositions and methods for barrier layer polishing |
| CN107474799B (zh) | 2010-03-12 | 2020-12-29 | 昭和电工材料株式会社 | 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法 |
| JP5621854B2 (ja) | 2010-11-22 | 2014-11-12 | 日立化成株式会社 | 砥粒の製造方法、スラリーの製造方法及び研磨液の製造方法 |
| SG190054A1 (en) * | 2010-11-22 | 2013-06-28 | Hitachi Chemical Co Ltd | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
| US9881801B2 (en) | 2010-11-22 | 2018-01-30 | Hitachi Chemical Company, Ltd. | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
| CN103562337A (zh) * | 2011-03-30 | 2014-02-05 | 福吉米株式会社 | 研磨用组合物和研磨方法 |
| KR102028217B1 (ko) | 2011-11-25 | 2019-10-02 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
| CN107617968A (zh) | 2012-02-21 | 2018-01-23 | 日立化成株式会社 | 研磨剂、研磨剂组和基体的研磨方法 |
| US9346977B2 (en) | 2012-02-21 | 2016-05-24 | Hitachi Chemical Company, Ltd. | Abrasive, abrasive set, and method for abrading substrate |
| US9932497B2 (en) | 2012-05-22 | 2018-04-03 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| CN104321854B (zh) | 2012-05-22 | 2017-06-20 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体 |
| SG11201407086TA (en) | 2012-05-22 | 2015-02-27 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| US8859428B2 (en) | 2012-10-19 | 2014-10-14 | Air Products And Chemicals, Inc. | Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof |
| US10227506B2 (en) | 2014-12-16 | 2019-03-12 | Basf Se | Chemical mechanical polishing (CMP) composition for high effective polishing of substrates comprising germanium |
| US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5245026A (en) * | 1987-09-24 | 1993-09-14 | Abbott Laboratories | Metal containing 8-hydroxyquinoline chelating agents |
| US5230833A (en) * | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5284633A (en) * | 1992-11-12 | 1994-02-08 | Sherex Chemical Co., Inc. | Solvent extraction of precious metals with hydroxyquinoline and stripping with acidified thiourea |
| US6099604A (en) * | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
| AU6379500A (en) * | 1999-08-13 | 2001-03-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing systems and methods for their use |
| US6855266B1 (en) * | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
| US6825117B2 (en) * | 1999-12-14 | 2004-11-30 | Intel Corporation | High PH slurry for chemical mechanical polishing of copper |
| US20010052500A1 (en) * | 2000-06-16 | 2001-12-20 | Applied Materials, Inc. | Metal removal system and method for chemical mechanical polishing |
| US6709316B1 (en) * | 2000-10-27 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for two-step barrier layer polishing |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US20030162399A1 (en) * | 2002-02-22 | 2003-08-28 | University Of Florida | Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures |
-
2005
- 2005-06-08 US US11/147,531 patent/US20060278614A1/en not_active Abandoned
-
2006
- 2006-06-02 WO PCT/US2006/021244 patent/WO2006132905A2/en active Application Filing
- 2006-06-08 TW TW095120425A patent/TW200706619A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9039925B2 (en) | 2012-04-10 | 2015-05-26 | Uwiz Technology Co., Ltd. | Polishing slurry composition |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060278614A1 (en) | 2006-12-14 |
| WO2006132905A2 (en) | 2006-12-14 |
| WO2006132905A3 (en) | 2007-08-09 |
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