TW200705517A - Method of manufacturing a semiconductor device and semiconductor device obeained with such a method - Google Patents
Method of manufacturing a semiconductor device and semiconductor device obeained with such a methodInfo
- Publication number
- TW200705517A TW200705517A TW095123245A TW95123245A TW200705517A TW 200705517 A TW200705517 A TW 200705517A TW 095123245 A TW095123245 A TW 095123245A TW 95123245 A TW95123245 A TW 95123245A TW 200705517 A TW200705517 A TW 200705517A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- semiconductor device
- manufacturing
- silicon
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 14
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 2
- 229910021480 group 4 element Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05105719 | 2005-06-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200705517A true TW200705517A (en) | 2007-02-01 |
Family
ID=37265894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095123245A TW200705517A (en) | 2005-06-27 | 2006-06-28 | Method of manufacturing a semiconductor device and semiconductor device obeained with such a method |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1900037A1 (zh) |
JP (1) | JP2008544563A (zh) |
CN (1) | CN101208804A (zh) |
TW (1) | TW200705517A (zh) |
WO (1) | WO2007000690A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008225217A (ja) | 2007-03-14 | 2008-09-25 | Sumitomo Electric Ind Ltd | 波長変換器 |
EP2248163B1 (en) | 2008-01-31 | 2015-08-05 | Nxp B.V. | Fully insulated semiconductor device and a method of manufacturing the same |
CN104157718B (zh) * | 2013-05-15 | 2018-08-28 | 李冰 | 一种高速硅基光探测器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4843439A (en) * | 1985-08-28 | 1989-06-27 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
FR2806833B1 (fr) * | 2000-03-27 | 2002-06-14 | St Microelectronics Sa | Procede de fabrication d'un transistor mos a deux grilles, dont l'une est enterree, et transistor correspondant |
KR100451459B1 (ko) * | 2003-02-10 | 2004-10-07 | 삼성전자주식회사 | 더블 게이트 전극 형성 방법 및 더블 게이트 전극을포함하는 반도체 장치의 제조 방법 |
FR2853454B1 (fr) * | 2003-04-03 | 2005-07-15 | St Microelectronics Sa | Transistor mos haute densite |
US6855583B1 (en) * | 2003-08-05 | 2005-02-15 | Advanced Micro Devices, Inc. | Method for forming tri-gate FinFET with mesa isolation |
JPWO2005036638A1 (ja) * | 2003-10-10 | 2006-12-28 | 国立大学法人東京工業大学 | 半導体基板、半導体装置及び半導体基板の作製方法 |
-
2006
- 2006-06-21 JP JP2008519028A patent/JP2008544563A/ja not_active Withdrawn
- 2006-06-21 EP EP06765814A patent/EP1900037A1/en not_active Withdrawn
- 2006-06-21 WO PCT/IB2006/052013 patent/WO2007000690A1/en not_active Application Discontinuation
- 2006-06-21 CN CNA2006800231851A patent/CN101208804A/zh active Pending
- 2006-06-28 TW TW095123245A patent/TW200705517A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007000690A1 (en) | 2007-01-04 |
EP1900037A1 (en) | 2008-03-19 |
JP2008544563A (ja) | 2008-12-04 |
CN101208804A (zh) | 2008-06-25 |
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