TW200644413A - System-in-package wireless communication device - Google Patents

System-in-package wireless communication device

Info

Publication number
TW200644413A
TW200644413A TW094133992A TW94133992A TW200644413A TW 200644413 A TW200644413 A TW 200644413A TW 094133992 A TW094133992 A TW 094133992A TW 94133992 A TW94133992 A TW 94133992A TW 200644413 A TW200644413 A TW 200644413A
Authority
TW
Taiwan
Prior art keywords
power amplifier
amplifier module
same side
wireless communication
terminal
Prior art date
Application number
TW094133992A
Other languages
English (en)
Other versions
TWI279079B (en
Inventor
Ikuroh Ichitsubo
Kanya Kubota
Wen-Chung Liu
Original Assignee
Micro Mobio Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micro Mobio Corp filed Critical Micro Mobio Corp
Publication of TW200644413A publication Critical patent/TW200644413A/zh
Application granted granted Critical
Publication of TWI279079B publication Critical patent/TWI279079B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0272—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/144—Stacked arrangements of planar printed circuit boards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/665—Bias feed arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01031—Gallium [Ga]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0495—5th Group
    • H01L2924/04953—TaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10336—Aluminium gallium arsenide [AlGaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19103—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/0433—Circuits with power amplifiers with linearisation using feedback
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/04—Assemblies of printed circuits
    • H05K2201/041—Stacked PCBs, i.e. having neither an empty space nor mounted components in between
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
TW094133992A 2005-06-14 2005-09-29 System-in-package wireless communication device TWI279079B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/152,308 US7769355B2 (en) 2005-01-19 2005-06-14 System-in-package wireless communication device comprising prepackaged power amplifier

Publications (2)

Publication Number Publication Date
TW200644413A true TW200644413A (en) 2006-12-16
TWI279079B TWI279079B (en) 2007-04-11

Family

ID=38645279

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094133992A TWI279079B (en) 2005-06-14 2005-09-29 System-in-package wireless communication device

Country Status (2)

Country Link
US (1) US7769355B2 (zh)
TW (1) TWI279079B (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6542720B1 (en) * 1999-03-01 2003-04-01 Micron Technology, Inc. Microelectronic devices, methods of operating microelectronic devices, and methods of providing microelectronic devices
US7693498B2 (en) * 2006-09-28 2010-04-06 Broadcom Corporation Probability optimized power amplifier module and transmitter
US20090137217A1 (en) * 2007-11-27 2009-05-28 Huang Chung-Er Communication transmission system and power detection method thereof
US8254850B2 (en) * 2008-06-11 2012-08-28 Adc Telecommunications, Inc. Communication module component assemblies
US9287914B2 (en) 2008-06-26 2016-03-15 Thomson Licensing Frontal block with intergrated antenna
GB2467325B (en) * 2009-01-29 2014-07-23 Microsoft Corp Radio-antenna modules for connection to external matching circuits
JP5583699B2 (ja) * 2009-02-18 2014-09-03 ホリンワース ファンド，エル．エル．シー． メタマテリアル電力増幅器システム
US8798564B2 (en) * 2009-03-17 2014-08-05 Provigent Ltd. Transmitter with replaceable power amplifier
EP2330746B1 (en) * 2009-12-04 2013-09-11 Alcatel Lucent RRM-Driven power amplifiers in transceiver units
US8301106B2 (en) * 2010-02-10 2012-10-30 Javelin Semiconductor, Inc. Stacked CMOS power amplifier and RF coupler devices and related methods
JP4851618B1 (ja) * 2010-11-15 2012-01-11 シャープ株式会社 半導体パッケージ
US9702911B2 (en) 2012-09-07 2017-07-11 Keysight Technologies, Inc. Adjustable power sensor
CN103944631B (zh) * 2014-05-13 2018-01-30 上海航天电子通讯设备研究所 一种基于sip技术的微型星载x波段数传发射装置
WO2017019803A1 (en) * 2015-07-28 2017-02-02 Skyworks Solutions, Inc. Power amplification system with programmable load line
KR102520393B1 (ko) * 2015-11-11 2023-04-12 삼성전자주식회사 디지털 신호의 분기에 따른 반사 손실을 감소시키는 임피던스 매칭 소자 및 이를 포함하는 테스트 시스템
KR102359559B1 (ko) * 2016-12-14 2022-02-08 가부시키가이샤 무라타 세이사쿠쇼 스위치 ic, 프론트 엔드 모듈 및 통신 장치
US9847801B1 (en) * 2017-04-26 2017-12-19 Fondazione Bruno Kessler Wideband power attenuators in RF-MEMS technology
WO2019176778A1 (ja) * 2018-03-14 2019-09-19 株式会社村田製作所 高周波モジュール及び通信装置
KR20210012306A (ko) * 2019-07-24 2021-02-03 삼성전자주식회사 능동 소자 어레이를 사용하는 송수신기 및 이를 포함하는 안테나 모듈
CN110837241B (zh) * 2019-11-22 2021-03-30 中国电子科技集团公司第五十八研究所 一种基于sip的采样处理系统

Family Cites Families (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US641730A (en) * 1898-03-19 1900-01-23 William Rogers Apparatus for treating plates.
DE3302876A1 (de) * 1983-01-28 1984-08-02 Robert Bosch Gmbh, 7000 Stuttgart Dipolantenne fuer tragbare funkgeraete
JP2569550B2 (ja) 1987-05-08 1997-01-08 石川島播磨重工業株式会社 燃料電池の温度分布改善方法
US5050238A (en) * 1988-07-12 1991-09-17 Sanyo Electric Co., Ltd. Shielded front end receiver circuit with IF amplifier on an IC
US5255324A (en) * 1990-12-26 1993-10-19 Ford Motor Company Digitally controlled audio amplifier with voltage limiting
US5164683A (en) 1991-10-21 1992-11-17 Motorola, Inc. RF amplifier assembly
US5283539A (en) * 1992-09-09 1994-02-01 Itt Corporation Monolithic compatible, absorptive, amplitude shaping network
JPH06224644A (ja) 1993-01-25 1994-08-12 Nec Corp 半導体装置
JP3243892B2 (ja) * 1993-05-21 2002-01-07 ソニー株式会社 信号切り替え用スイッチ
JP3144744B2 (ja) * 1993-11-02 2001-03-12 日本碍子株式会社 積層型誘電体フィルタ
US5897087A (en) * 1994-03-15 1999-04-27 Thompson Surgical Instruments, Inc. CAM tightened universal joint clamp
JPH08125469A (ja) * 1994-10-21 1996-05-17 Nec Corp 電力増幅器の出力制御装置
JPH08204530A (ja) * 1995-01-23 1996-08-09 Sony Corp スイツチ回路
US5625894A (en) * 1995-03-21 1997-04-29 Industrial Technology Research Institute Switch filter having selectively interconnected filter stages and ports
US5658972A (en) * 1995-11-28 1997-08-19 Air Products And Chemicals, Inc. Fire retardant plastic construction material
US5858314A (en) * 1996-04-12 1999-01-12 Ztek Corporation Thermally enhanced compact reformer
JPH1022756A (ja) * 1996-07-04 1998-01-23 Mitsubishi Electric Corp 無線送信機およびその送信制御方法
JPH1079623A (ja) * 1996-09-02 1998-03-24 Olympus Optical Co Ltd アンテナ素子を内蔵する半導体モジュール
DE19652799C2 (de) * 1996-12-18 1999-05-20 Siemens Ag Mikrowellenfilter
US6097098A (en) * 1997-02-14 2000-08-01 Micron Technology, Inc. Die interconnections using intermediate connection elements secured to the die face
JP3475037B2 (ja) * 1997-03-14 2003-12-08 株式会社東芝 無線機
US5880635A (en) * 1997-04-16 1999-03-09 Sony Corporation Apparatus for optimizing the performance of a power amplifier
US6148220A (en) 1997-04-25 2000-11-14 Triquint Semiconductor, Inc. Battery life extending technique for mobile wireless applications
KR100239750B1 (ko) * 1997-06-16 2000-01-15 윤종용 에폭시 몰딩 컴파운드 패드를 이용한 반도체 패키지 구조 및 에폭시 몰딩 컴파운드 패드의 제조 방법
JP3310203B2 (ja) * 1997-07-25 2002-08-05 株式会社東芝 高周波スイッチ装置
US6175279B1 (en) * 1997-12-09 2001-01-16 Qualcomm Incorporated Amplifier with adjustable bias current
FR2772051B1 (fr) * 1997-12-10 1999-12-31 Atochem Elf Sa Procede d'immobilisation d'une cellule d'electrolyse a membrane et a cathode a reduction d'oxygene
US6075995A (en) * 1998-01-30 2000-06-13 Conexant Systems, Inc. Amplifier module with two power amplifiers for dual band cellular phones
US6326866B1 (en) 1998-02-24 2001-12-04 Murata Manufacturing Co., Ltd. Bandpass filter, duplexer, high-frequency module and communications device
US6294967B1 (en) * 1998-03-18 2001-09-25 Ngk Insulators, Ltd. Laminated type dielectric filter
US6151509A (en) 1998-06-24 2000-11-21 Conexant Systems, Inc. Dual band cellular phone with two power amplifiers and a current detector for monitoring the consumed power
KR20010053413A (ko) * 1998-07-08 2001-06-25 가나이 쓰토무 이동체 전화 장치
JP2000114950A (ja) * 1998-10-07 2000-04-21 Murata Mfg Co Ltd Ｓｐｓｔスイッチおよびｓｐｄｔスイッチおよびそれを用いた通信機
KR100316383B1 (ko) * 1998-10-30 2002-02-19 윤덕용 모노리딕직접회로위에박막또는후막단결정압전소자를집적한단일칩라디오구조및그제조방법
US6281755B1 (en) * 1998-12-28 2001-08-28 Siemens Aktiengesellschaft High-frequency power amplifier
US6678506B1 (en) * 1999-01-13 2004-01-13 Nortel Networks Limited Extended range power detector
US6203587B1 (en) 1999-01-19 2001-03-20 International Fuel Cells Llc Compact fuel gas reformer assemblage
US6501945B1 (en) * 1999-02-05 2002-12-31 Benq Corporation Cellular phone with an insulating envelope for preventing leakage of electromagnetic radiation
US6542720B1 (en) * 1999-03-01 2003-04-01 Micron Technology, Inc. Microelectronic devices, methods of operating microelectronic devices, and methods of providing microelectronic devices
DE59914564D1 (de) * 1999-04-14 2008-01-10 Daetwyler Ag Verfahren zur Erzeugung von Gravurdaten
US6198351B1 (en) * 1999-05-10 2001-03-06 Tyco Electronics Logistics Ag Power sensing apparatus for power amplifiers
US6262630B1 (en) * 1999-06-04 2001-07-17 Telefonaktiebolaget Lm Ericsson (Publ) Rapidly-responding diode detector with temperature compensation
JP3578673B2 (ja) * 1999-08-05 2004-10-20 松下電器産業株式会社 誘電体積層フィルタおよびその製造方法
US6271727B1 (en) * 1999-08-06 2001-08-07 Rf Micro Devices, Inc. High isolation RF power amplifier with self-bias attenuator
US6775525B1 (en) * 1999-10-29 2004-08-10 Renesas Technology Corporation Radio communication apparatus and semiconductor device
US6754471B1 (en) * 1999-12-06 2004-06-22 Skyworks Solutions, Inc. Surface acoustic wave filter packaging
US6265943B1 (en) 2000-01-27 2001-07-24 Rf Micro Devices, Inc. Integrated RF power sensor that compensates for bias changes
JP3637830B2 (ja) * 2000-02-22 2005-04-13 株式会社村田製作所 Ｓｐｄｔスイッチおよびそれを用いた通信機
JP3600115B2 (ja) * 2000-04-05 2004-12-08 株式会社東芝 高周波回路及び通信システム
KR20010094784A (ko) 2000-04-06 2001-11-03 윤종용 커패시터 보상회로를 갖는 콤라인 구조의 무선필터
US6518844B1 (en) * 2000-04-13 2003-02-11 Raytheon Company Suspended transmission line with embedded amplifier
JP2002043813A (ja) * 2000-05-19 2002-02-08 Hitachi Ltd 方向性結合器及び高周波回路モジュール並びに無線通信機
JP2002016450A (ja) * 2000-06-29 2002-01-18 Tdk Corp 移動体通信機器用パワーアンプモジュールと移動体通信機器用端末と移動体通信機器用基地局
US6462950B1 (en) * 2000-11-29 2002-10-08 Nokia Mobile Phones Ltd. Stacked power amplifier module
US6417730B1 (en) * 2000-11-29 2002-07-09 Harris Corporation Automatic gain control system and related method
US6694129B2 (en) * 2001-01-12 2004-02-17 Qualcomm, Incorporated Direct conversion digital domain control
JP3868775B2 (ja) * 2001-02-23 2007-01-17 宇部興産株式会社 アンテナ装置及びそれを用いた通信装置
US7142882B2 (en) * 2001-03-09 2006-11-28 Schmidt Dominik J Single chip wireless communication integrated circuit
JP2002314373A (ja) * 2001-04-10 2002-10-25 Murata Mfg Co Ltd 可変減衰器
US6690251B2 (en) * 2001-04-11 2004-02-10 Kyocera Wireless Corporation Tunable ferro-electric filter
US6404284B1 (en) * 2001-04-19 2002-06-11 Anadigics, Inc. Amplifier bias adjustment circuit to maintain high-output third-order intermodulation distortion performance
JP3664990B2 (ja) * 2001-04-25 2005-06-29 株式会社東芝 高周波回路及び通信システム
JP3960115B2 (ja) * 2001-05-24 2007-08-15 松下電器産業株式会社 携帯用電力増幅器
JP3670222B2 (ja) 2001-05-29 2005-07-13 三菱電機株式会社 高周波増幅器および高周波多段増幅器
US6683512B2 (en) * 2001-06-21 2004-01-27 Kyocera Corporation High frequency module having a laminate board with a plurality of dielectric layers
TW594888B (en) * 2001-09-05 2004-06-21 Hitachi Ltd Semiconductor device and manufacturing method thereof and wireless communication device
TW530454B (en) * 2001-09-21 2003-05-01 Ind Tech Res Inst Multi-layered band separator having parasitic grounding capacitance
JP3803050B2 (ja) * 2001-10-29 2006-08-02 株式会社ルネサステクノロジ 半導体記憶装置、ダイナミックランダムアクセスメモリおよび半導体装置
US6914481B2 (en) * 2001-11-26 2005-07-05 Matsushita Electric Industrial Co., Ltd. High frequency power amplifier apparatus and power amplifier module use the same
JP3932259B2 (ja) * 2001-12-12 2007-06-20 株式会社ルネサステクノロジ 高周波電力増幅回路および無線通信用電子部品
KR100993277B1 (ko) * 2002-04-30 2010-11-10 르네사스 일렉트로닉스 가부시키가이샤 반도체장치 및 전자 장치
GB2389275B (en) * 2002-05-31 2006-10-25 Hitachi Ltd Apparatus for mobile communication system
US7071783B2 (en) * 2002-07-19 2006-07-04 Micro Mobio Corporation Temperature-compensated power sensing circuit for power amplifiers
US6822515B2 (en) 2002-07-19 2004-11-23 Ikuroh Ichitsubo Accurate power sensing circuit for power amplifiers
US6774718B2 (en) * 2002-07-19 2004-08-10 Micro Mobio Inc. Power amplifier module for wireless communication devices
WO2004023649A1 (ja) * 2002-09-05 2004-03-18 Renesas Technology Corp. 高周波電力増幅用電子部品および無線通信システム
AU2003282909A1 (en) * 2002-10-02 2004-04-23 University Of Florida Single chip radio with integrated antenna
FI114057B (fi) * 2002-10-18 2004-07-30 Nokia Corp Menetelmä ja järjestely kuorman epäsovituksen havaitsemiseksi, sekä sellaista käyttävä radiolaite
US7828804B2 (en) * 2002-11-08 2010-11-09 Warsaw Orthopedic, Inc. Transpedicular intervertebral disk access methods and devices
JP2004159221A (ja) * 2002-11-08 2004-06-03 Renesas Technology Corp 通信用半導体集積回路および無線通信システム
JP3851900B2 (ja) 2002-11-25 2006-11-29 シャープ株式会社 平面フィルタ、半導体装置、および無線装置
TW569521B (en) * 2002-12-10 2004-01-01 Delta Electronics Inc Radio frequency power amplifier module integrated with a power control loop
US20040224649A1 (en) * 2003-02-05 2004-11-11 Khosro Shamsaifar Electronically tunable power amplifier tuner
JP2004260364A (ja) * 2003-02-25 2004-09-16 Renesas Technology Corp 半導体装置及び高出力電力増幅装置並びにパソコンカード
US7149496B2 (en) 2003-03-27 2006-12-12 Kyocera Corporation High-frequency module and radio communication apparatus
JP2004319550A (ja) * 2003-04-11 2004-11-11 Hitachi Ltd 半導体装置
JP4287193B2 (ja) * 2003-05-15 2009-07-01 株式会社ルネサステクノロジ 高周波電力増幅用電子部品および無線通信システム
KR20040104177A (ko) * 2003-06-03 2004-12-10 삼성전기주식회사 시분할방식 전력증폭모듈
WO2004112241A1 (en) * 2003-06-10 2004-12-23 Kabushiki Kaisha Toshiba High-frequency power amplifier module
JP2005033350A (ja) * 2003-07-09 2005-02-03 Renesas Technology Corp 高周波電力増幅モジュールおよび半導体集積回路装置
US7167688B2 (en) * 2003-07-30 2007-01-23 Chi Mei Communication Systems, Inc. RF transceiver module formed in multi-layered ceramic
TW200518345A (en) * 2003-08-08 2005-06-01 Renesas Tech Corp Semiconductor device
JP2005143079A (ja) * 2003-10-14 2005-06-02 Matsushita Electric Ind Co Ltd 高周波電力増幅器
US7304539B2 (en) * 2003-10-16 2007-12-04 Renesas Technology Corporation High frequency power amplifier circuit and electronic component for high frequency power amplifier
TW200522335A (en) * 2003-12-16 2005-07-01 Richwave Technology Corp Wireless output chip and related producing method with power detector
US7305222B2 (en) * 2003-12-19 2007-12-04 Broadcom Corporation Radio frequency integrated circuit having reduced receiver noise levels
US7502601B2 (en) * 2003-12-22 2009-03-10 Black Sand Technologies, Inc. Power amplifier with digital power control and associated methods
JP2005223877A (ja) * 2004-01-05 2005-08-18 Renesas Technology Corp 高周波電力増幅回路
JP4418250B2 (ja) * 2004-02-05 2010-02-17 株式会社ルネサステクノロジ 高周波回路モジュール
JP2005229268A (ja) * 2004-02-12 2005-08-25 Renesas Technology Corp 高周波電力増幅回路および無線通信システム
US7119631B2 (en) * 2004-03-12 2006-10-10 Broadcom Corporation Off-chip LC circuit for lowest ground and VDD impedance for power amplifier
US7307331B2 (en) * 2004-03-31 2007-12-11 Intel Corporation Integrated radio front-end module with embedded circuit elements
JP2005318093A (ja) 2004-04-27 2005-11-10 Toshiba Corp 高周波スイッチ回路
JP2005327805A (ja) * 2004-05-12 2005-11-24 Renesas Technology Corp 半導体装置およびその製造方法
JP2006013566A (ja) * 2004-06-22 2006-01-12 Renesas Technology Corp 高周波電力増幅用電子部品
US7280805B2 (en) * 2004-07-09 2007-10-09 Silicon Storage Technology, Inc. LO leakage and sideband image calibration system and method
JP2006093773A (ja) * 2004-09-21 2006-04-06 Renesas Technology Corp 高周波電力増幅モジュール
TWI288883B (en) * 2004-09-27 2007-10-21 Murata Manufacturing Co RF circuit module
US7274913B2 (en) * 2004-10-15 2007-09-25 Broadcom Corporation Transceiver system and method of using same
US7215204B2 (en) * 2004-12-29 2007-05-08 Agere Systems Inc. Intelligent high-power amplifier module
US7580687B2 (en) * 2005-01-19 2009-08-25 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
US7548111B2 (en) * 2005-01-19 2009-06-16 Micro Mobio Corporation Miniature dual band power amplifier with reserved pins
US7333831B2 (en) * 2005-02-07 2008-02-19 Nxp B.V. Interchangeable receive inputs for band and system swappability in communication systems and related methods

Also Published As

Publication number Publication date
US7769355B2 (en) 2010-08-03
TWI279079B (en) 2007-04-11
US20060160504A1 (en) 2006-07-20

Similar Documents

Publication Publication Date Title
TW200644413A (en) System-in-package wireless communication device
SG131900A1 (en) High-bandwidth high-gain amplifier
EP4167481A4 (en) POWER AMPLIFIER OUTPUT ADAPTER CIRCUIT, RADIO FREQUENCY FRONT MODULE AND WIRELESS DEVICE
GB2575747A (en) Apparatus and methods for bias switching of power amplifiers
TW200603534A (en) Radio frequency low noise amplifier with automatic gain control
TWI256782B (en) Wireless communication circuit, wireless communication apparatus, and wireless communication system
TW200719584A (en) High-bandwidth high-gain amplifier
ATE441969T1 (de) Integrierter analogvideoempfänger
ZA200803057B (en) Radio communication device comprising at least one radio communication module and one sim card, corresponding radio communication module and sim card
WO2007040826A3 (en) A radio frequency power amplifier circuit and method
EP1986331A4 (en) METHOD FOR PROVIDING A POWER AMPLIFIER TO SUPPORT MULTIPLE POWERS
WO2005043747A3 (en) High linearity doherty communication amplifier with bias control
EP1237297A3 (en) Radio communication terminal & gain control circuit for the same
WO2010120825A3 (en) Field-plated transistor including feedback resistor
TW200707899A (en) Differential amplifier
HK1080308A1 (en) Gain compensation over temperature and frequency variations in wireless transceivers
ATE489775T1 (de) Antennenvorrichtung und tragbare funkkommunikationsvorrichtung damit
TW200743334A (en) RF transceiver and communication device using the same
WO2008100055A3 (en) Microphone amplifier
AU2002235843A1 (en) Power amplifier (pa) with increased dynamics and efficiency
TW200726069A (en) Wireless transmitters with temperature gain compensation
TW200705744A (en) Wireless electronic device and method for controlling the wireless electronic device
EP1708358A3 (en) Mobile communications terminal having driving voltage control apparatus and method thereof
AU2003260475A1 (en) Dc-compensation loop for variable gain amplifier
DE602006005794D1 (de) Empfänger mit verstärker