TW200641548A - Lithography measurements using scatterometry - Google Patents

Lithography measurements using scatterometry

Info

Publication number
TW200641548A
TW200641548A TW095105778A TW95105778A TW200641548A TW 200641548 A TW200641548 A TW 200641548A TW 095105778 A TW095105778 A TW 095105778A TW 95105778 A TW95105778 A TW 95105778A TW 200641548 A TW200641548 A TW 200641548A
Authority
TW
Taiwan
Prior art keywords
substrate
patterning device
scatterometry
hold
lithographic apparatus
Prior art date
Application number
TW095105778A
Other languages
English (en)
Inventor
Ingen Schenau Koen Van
Maurice Henricus Franciscus Janssen
Antoine Gaston Marie Kiers
Der Laan Hans Van
Peter Clement Paul Vanoppen
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW200641548A publication Critical patent/TW200641548A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
    • E04G21/00—Preparing, conveying, or working-up building materials or building elements in situ; Other devices or measures for constructional work
    • E04G21/32—Safety or protective measures for persons during the construction of buildings
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
    • E04G17/00—Connecting or other auxiliary members for forms, falsework structures, or shutterings
    • E04G17/002—Workplatforms, railings; Arrangements for pouring concrete, attached to the form
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
    • E04G7/00—Connections between parts of the scaffold
    • E04G7/02—Connections between parts of the scaffold with separate coupling elements
    • E04G7/28—Clips or connections for securing boards
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Civil Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW095105778A 2005-02-25 2006-02-21 Lithography measurements using scatterometry TW200641548A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65590705P 2005-02-25 2005-02-25

Publications (1)

Publication Number Publication Date
TW200641548A true TW200641548A (en) 2006-12-01

Family

ID=36147057

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105778A TW200641548A (en) 2005-02-25 2006-02-21 Lithography measurements using scatterometry

Country Status (7)

Country Link
US (1) US7443486B2 (zh)
EP (1) EP1696271A1 (zh)
JP (1) JP2006237626A (zh)
KR (1) KR100747144B1 (zh)
CN (1) CN1854899A (zh)
SG (1) SG125231A1 (zh)
TW (1) TW200641548A (zh)

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US7483804B2 (en) * 2006-09-29 2009-01-27 Tokyo Electron Limited Method of real time dynamic CD control
US20080135774A1 (en) 2006-12-08 2008-06-12 Asml Netherlands B.V. Scatterometer, a lithographic apparatus and a focus analysis method
TW200836215A (en) * 2007-02-27 2008-09-01 Univ Nat Taiwan Science Tech Inverse method of fiber probe aperture size by non-destructive method and prediction fabrication profile method of near field photolithography
US7917244B2 (en) * 2007-03-14 2011-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing critical dimension side-to-side tilting error
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NL1036018A1 (nl) * 2007-10-09 2009-04-15 Asml Netherlands Bv A method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus.
US8421026B2 (en) * 2008-01-03 2013-04-16 Carl Zeiss Sms Ltd. Method and apparatus for mapping of line-width size distributions on photomasks
DE102008015631A1 (de) * 2008-03-20 2009-09-24 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Masken für die Photolithographie
US9046788B2 (en) * 2008-05-19 2015-06-02 International Business Machines Corporation Method for monitoring focus on an integrated wafer
US8432530B2 (en) * 2008-07-22 2013-04-30 Canon Kabushiki Kaisha Device, method, and system for measuring image profiles produced by an optical lithography system
WO2010052098A1 (en) * 2008-11-07 2010-05-14 Asml Netherlands B.V. Scatterometer and lithographic apparatus
DE102010030758B4 (de) 2010-06-30 2018-07-19 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Steuerung kritischer Abmessungen in optischen Abbildungsprozessen für die Halbleiterherstellung durch Extraktion von Abbildungsfehlern auf der Grundlage abbildungsanlagenspezifischer Intensitätsmessungen und Simulationen
RU2509718C1 (ru) * 2012-08-07 2014-03-20 Корпорация "САМСУНГ ЭЛЕКТРОНИКС Ко., Лтд." Оптическая измерительная система и способ измерения критического размера
US10883924B2 (en) 2014-09-08 2021-01-05 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
US9842724B2 (en) 2015-02-03 2017-12-12 Kla-Tencor Corporation Method and system for imaging of a photomask through a pellicle
EP3293575A1 (en) * 2016-09-12 2018-03-14 ASML Netherlands B.V. Differential target design and method for process metrology
EP3396458A1 (en) * 2017-04-28 2018-10-31 ASML Netherlands B.V. Method and apparatus for optimization of lithographic process
KR102411813B1 (ko) * 2017-05-05 2022-06-22 에이에스엠엘 네델란즈 비.브이. 디바이스 제조 프로세스의 수율의 예측 방법
WO2018233966A1 (en) * 2017-06-22 2018-12-27 Asml Netherlands B.V. METHOD FOR DETERMINING THE CONTRIBUTION TO A DIGITAL IMPRINT
CN110799902B (zh) 2017-08-29 2022-12-23 极光先进雷射株式会社 数据分析装置、半导体制造系统、数据分析方法和半导体制造方法
WO2020114686A1 (en) * 2018-12-03 2020-06-11 Asml Netherlands B.V. Method to predict yield of a semiconductor manufacturing process
CN109883653B (zh) * 2019-01-10 2020-09-18 苏州端景光电仪器有限公司 一种自聚焦透镜光学后截距的静态测试装置及方法

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Also Published As

Publication number Publication date
EP1696271A1 (en) 2006-08-30
KR100747144B1 (ko) 2007-08-07
KR20060094892A (ko) 2006-08-30
US20060192936A1 (en) 2006-08-31
US7443486B2 (en) 2008-10-28
CN1854899A (zh) 2006-11-01
SG125231A1 (en) 2006-09-29
JP2006237626A (ja) 2006-09-07

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