SG125231A1 - Lithography measurements using scatterometry - Google Patents
Lithography measurements using scatterometryInfo
- Publication number
- SG125231A1 SG125231A1 SG200601143A SG200601143A SG125231A1 SG 125231 A1 SG125231 A1 SG 125231A1 SG 200601143 A SG200601143 A SG 200601143A SG 200601143 A SG200601143 A SG 200601143A SG 125231 A1 SG125231 A1 SG 125231A1
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- patterning device
- scatterometry
- hold
- lithographic apparatus
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
- E04G21/00—Preparing, conveying, or working-up building materials or building elements in situ; Other devices or measures for constructional work
- E04G21/32—Safety or protective measures for persons during the construction of buildings
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
- E04G17/00—Connecting or other auxiliary members for forms, falsework structures, or shutterings
- E04G17/002—Workplatforms, railings; Arrangements for pouring concrete, attached to the form
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
- E04G7/00—Connections between parts of the scaffold
- E04G7/02—Connections between parts of the scaffold with separate coupling elements
- E04G7/28—Clips or connections for securing boards
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Civil Engineering (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65590705P | 2005-02-25 | 2005-02-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG125231A1 true SG125231A1 (en) | 2006-09-29 |
Family
ID=36147057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200601143A SG125231A1 (en) | 2005-02-25 | 2006-02-21 | Lithography measurements using scatterometry |
Country Status (7)
Country | Link |
---|---|
US (1) | US7443486B2 (zh) |
EP (1) | EP1696271A1 (zh) |
JP (1) | JP2006237626A (zh) |
KR (1) | KR100747144B1 (zh) |
CN (1) | CN1854899A (zh) |
SG (1) | SG125231A1 (zh) |
TW (1) | TW200641548A (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7625680B2 (en) * | 2006-09-29 | 2009-12-01 | Tokyo Electron Limited | Method of real time dynamic CD control |
US7483804B2 (en) * | 2006-09-29 | 2009-01-27 | Tokyo Electron Limited | Method of real time dynamic CD control |
US20080135774A1 (en) | 2006-12-08 | 2008-06-12 | Asml Netherlands B.V. | Scatterometer, a lithographic apparatus and a focus analysis method |
TW200836215A (en) * | 2007-02-27 | 2008-09-01 | Univ Nat Taiwan Science Tech | Inverse method of fiber probe aperture size by non-destructive method and prediction fabrication profile method of near field photolithography |
US7917244B2 (en) * | 2007-03-14 | 2011-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for reducing critical dimension side-to-side tilting error |
US7460237B1 (en) | 2007-08-02 | 2008-12-02 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
NL1036018A1 (nl) * | 2007-10-09 | 2009-04-15 | Asml Netherlands Bv | A method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus. |
US8421026B2 (en) * | 2008-01-03 | 2013-04-16 | Carl Zeiss Sms Ltd. | Method and apparatus for mapping of line-width size distributions on photomasks |
DE102008015631A1 (de) * | 2008-03-20 | 2009-09-24 | Carl Zeiss Sms Gmbh | Verfahren und Vorrichtung zur Vermessung von Masken für die Photolithographie |
US9046788B2 (en) * | 2008-05-19 | 2015-06-02 | International Business Machines Corporation | Method for monitoring focus on an integrated wafer |
US8432530B2 (en) * | 2008-07-22 | 2013-04-30 | Canon Kabushiki Kaisha | Device, method, and system for measuring image profiles produced by an optical lithography system |
WO2010052098A1 (en) * | 2008-11-07 | 2010-05-14 | Asml Netherlands B.V. | Scatterometer and lithographic apparatus |
DE102010030758B4 (de) | 2010-06-30 | 2018-07-19 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Steuerung kritischer Abmessungen in optischen Abbildungsprozessen für die Halbleiterherstellung durch Extraktion von Abbildungsfehlern auf der Grundlage abbildungsanlagenspezifischer Intensitätsmessungen und Simulationen |
RU2509718C1 (ru) * | 2012-08-07 | 2014-03-20 | Корпорация "САМСУНГ ЭЛЕКТРОНИКС Ко., Лтд." | Оптическая измерительная система и способ измерения критического размера |
US10883924B2 (en) | 2014-09-08 | 2021-01-05 | The Research Foundation Of State University Of New York | Metallic gratings and measurement methods thereof |
US9842724B2 (en) | 2015-02-03 | 2017-12-12 | Kla-Tencor Corporation | Method and system for imaging of a photomask through a pellicle |
EP3293575A1 (en) * | 2016-09-12 | 2018-03-14 | ASML Netherlands B.V. | Differential target design and method for process metrology |
EP3396458A1 (en) * | 2017-04-28 | 2018-10-31 | ASML Netherlands B.V. | Method and apparatus for optimization of lithographic process |
KR102411813B1 (ko) * | 2017-05-05 | 2022-06-22 | 에이에스엠엘 네델란즈 비.브이. | 디바이스 제조 프로세스의 수율의 예측 방법 |
WO2018233966A1 (en) * | 2017-06-22 | 2018-12-27 | Asml Netherlands B.V. | METHOD FOR DETERMINING THE CONTRIBUTION TO A DIGITAL IMPRINT |
CN110799902B (zh) | 2017-08-29 | 2022-12-23 | 极光先进雷射株式会社 | 数据分析装置、半导体制造系统、数据分析方法和半导体制造方法 |
WO2020114686A1 (en) * | 2018-12-03 | 2020-06-11 | Asml Netherlands B.V. | Method to predict yield of a semiconductor manufacturing process |
CN109883653B (zh) * | 2019-01-10 | 2020-09-18 | 苏州端景光电仪器有限公司 | 一种自聚焦透镜光学后截距的静态测试装置及方法 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58124905A (ja) | 1982-01-21 | 1983-07-25 | Nec Corp | パタ−ン測定方法 |
US5703692A (en) | 1995-08-03 | 1997-12-30 | Bio-Rad Laboratories, Inc. | Lens scatterometer system employing source light beam scanning means |
KR100210569B1 (ko) | 1995-09-29 | 1999-07-15 | 미따라이 하지메 | 노광방법 및 노광장치, 그리고 이를 이용한 디바이스제조방법 |
JPH09162107A (ja) | 1995-12-11 | 1997-06-20 | Nikon Corp | 投影露光方法 |
US5880838A (en) | 1996-06-05 | 1999-03-09 | California Institute Of California | System and method for optically measuring a structure |
US5963329A (en) | 1997-10-31 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for measuring the profile of small repeating lines |
US6215578B1 (en) | 1998-09-17 | 2001-04-10 | Vanguard International Semiconductor Corporation | Electronically switchable off-axis illumination blade for stepper illumination system |
US6187488B1 (en) | 1999-03-18 | 2001-02-13 | Kabushiki Kaisha Toshiba | Pattern estimating method and pattern forming method |
US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
US6689519B2 (en) | 2000-05-04 | 2004-02-10 | Kla-Tencor Technologies Corp. | Methods and systems for lithography process control |
US6753961B1 (en) | 2000-09-18 | 2004-06-22 | Therma-Wave, Inc. | Spectroscopic ellipsometer without rotating components |
IL138552A (en) | 2000-09-19 | 2006-08-01 | Nova Measuring Instr Ltd | Measurement of transverse displacement by optical method |
US6768983B1 (en) | 2000-11-28 | 2004-07-27 | Timbre Technologies, Inc. | System and method for real-time library generation of grating profiles |
US6515744B2 (en) | 2001-02-08 | 2003-02-04 | Therma-Wave, Inc. | Small spot ellipsometer |
WO2002065545A2 (en) | 2001-02-12 | 2002-08-22 | Sensys Instruments Corporation | Overlay alignment metrology using diffraction gratings |
US6699624B2 (en) | 2001-02-27 | 2004-03-02 | Timbre Technologies, Inc. | Grating test patterns and methods for overlay metrology |
US6856408B2 (en) | 2001-03-02 | 2005-02-15 | Accent Optical Technologies, Inc. | Line profile asymmetry measurement using scatterometry |
US6704661B1 (en) | 2001-07-16 | 2004-03-09 | Therma-Wave, Inc. | Real time analysis of periodic structures on semiconductors |
US6785638B2 (en) | 2001-08-06 | 2004-08-31 | Timbre Technologies, Inc. | Method and system of dynamic learning through a regression-based library generation process |
US7061615B1 (en) | 2001-09-20 | 2006-06-13 | Nanometrics Incorporated | Spectroscopically measured overlay target |
US6792374B2 (en) * | 2001-10-30 | 2004-09-14 | Micron Technology, Inc. | Apparatus and method for determining effect of on-chip noise on signal propagation |
US6608690B2 (en) | 2001-12-04 | 2003-08-19 | Timbre Technologies, Inc. | Optical profilometry of additional-material deviations in a periodic grating |
US6772084B2 (en) | 2002-01-31 | 2004-08-03 | Timbre Technologies, Inc. | Overlay measurements using periodic gratings |
US6813034B2 (en) | 2002-02-05 | 2004-11-02 | Therma-Wave, Inc. | Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements |
US7061627B2 (en) | 2002-03-13 | 2006-06-13 | Therma-Wave, Inc. | Optical scatterometry of asymmetric lines and structures |
US6721691B2 (en) | 2002-03-26 | 2004-04-13 | Timbre Technologies, Inc. | Metrology hardware specification using a hardware simulator |
US6928628B2 (en) | 2002-06-05 | 2005-08-09 | Kla-Tencor Technologies Corporation | Use of overlay diagnostics for enhanced automatic process control |
US7046376B2 (en) | 2002-07-05 | 2006-05-16 | Therma-Wave, Inc. | Overlay targets with isolated, critical-dimension features and apparatus to measure overlay |
US6919964B2 (en) | 2002-07-09 | 2005-07-19 | Therma-Wave, Inc. | CD metrology analysis using a finite difference method |
DE60314484T2 (de) | 2002-11-01 | 2008-02-21 | Asml Netherlands B.V. | Untersuchungsverfahren und Verfahren zur Herstellung einer Vorrichtung |
US7068363B2 (en) | 2003-06-06 | 2006-06-27 | Kla-Tencor Technologies Corp. | Systems for inspection of patterned or unpatterned wafers and other specimen |
US7061623B2 (en) | 2003-08-25 | 2006-06-13 | Spectel Research Corporation | Interferometric back focal plane scatterometry with Koehler illumination |
US7242459B2 (en) * | 2004-01-30 | 2007-07-10 | Asml Masktools B.V. | Method of predicting and minimizing model OPC deviation due to mix/match of exposure tools using a calibrated Eigen decomposition model |
US7266800B2 (en) * | 2004-06-04 | 2007-09-04 | Invarium, Inc. | Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes |
US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
US20060109463A1 (en) | 2004-11-22 | 2006-05-25 | Asml Netherlands B.V. | Latent overlay metrology |
US7453577B2 (en) | 2004-12-14 | 2008-11-18 | Asml Netherlands B.V. | Apparatus and method for inspecting a patterned part of a sample |
-
2006
- 2006-02-14 US US11/353,235 patent/US7443486B2/en active Active
- 2006-02-16 EP EP06250844A patent/EP1696271A1/en not_active Withdrawn
- 2006-02-21 SG SG200601143A patent/SG125231A1/en unknown
- 2006-02-21 TW TW095105778A patent/TW200641548A/zh unknown
- 2006-02-23 KR KR1020060017604A patent/KR100747144B1/ko active IP Right Grant
- 2006-02-24 CN CNA2006100711259A patent/CN1854899A/zh active Pending
- 2006-02-27 JP JP2006086490A patent/JP2006237626A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
TW200641548A (en) | 2006-12-01 |
EP1696271A1 (en) | 2006-08-30 |
KR100747144B1 (ko) | 2007-08-07 |
KR20060094892A (ko) | 2006-08-30 |
US20060192936A1 (en) | 2006-08-31 |
US7443486B2 (en) | 2008-10-28 |
CN1854899A (zh) | 2006-11-01 |
JP2006237626A (ja) | 2006-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200641548A (en) | Lithography measurements using scatterometry | |
TW200632589A (en) | Method of generating a photolithography patterning device, computer program, patterning device, method of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus | |
JP2005005707A5 (zh) | ||
TW200612207A (en) | Lithographic apparatus and device manufacturing method | |
EP1821149A3 (en) | Exposure apparatus and device manufacturing method | |
TW200629014A (en) | Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness | |
TW200602813A (en) | Lithographic apparatus and device manufacturing method | |
TWI265381B (en) | Method for coating a substrate for EUV lithography and substrate with photoresist layer | |
TWI263859B (en) | Lithographic apparatus and device manufacturing method | |
TW200600978A (en) | Lithographic apparatus and device manufacturing method | |
EP1882987A3 (en) | System and method to compensate for critical dimension non-uniformity in a lithography system | |
TW200611079A (en) | Lithographic apparatus, control system and device manufacturing method | |
TW200734832A (en) | Explosure method, explosure apparatus, photomask, and method for manufacturing photomask | |
TW200731023A (en) | System and method for compensating for radiation induced thermal distortions | |
TW200717186A (en) | Exposure apparatus and method | |
WO2005064400A3 (en) | Chuck system, lithographic apparatus using the same and device manufacturing method | |
JP2005093522A5 (zh) | ||
TW200700931A (en) | Cilibration method of sensor, exposing method, exposing device, manufactureing mehtod of device and reflective mask | |
SG170831A1 (en) | Lithographic apparatus, projection assembly and active damping | |
EP1708028A3 (en) | Optical element, exposure apparatus, and device manufacturing method | |
TW200630759A (en) | Substrate table, method of measuring a position of a substrate and a lithographic apparatus | |
TW200625025A (en) | Lithographic apparatus, analyser plate, subassembly, method of measuring a parameter of a projection system and patterning means | |
SG147288A1 (en) | Lithographic apparatus, device manufacturing method and angular encoder | |
TW200604752A (en) | Lithographic apparatus and device manufacturing method | |
TW200707136A (en) | Focus determination method, device manufacturing method, and mask |