TW200636804A - Substrate surface processing apparatus - Google Patents

Substrate surface processing apparatus

Info

Publication number
TW200636804A
TW200636804A TW094146092A TW94146092A TW200636804A TW 200636804 A TW200636804 A TW 200636804A TW 094146092 A TW094146092 A TW 094146092A TW 94146092 A TW94146092 A TW 94146092A TW 200636804 A TW200636804 A TW 200636804A
Authority
TW
Taiwan
Prior art keywords
heating medium
flow ring
processing apparatus
substrate surface
surface processing
Prior art date
Application number
TW094146092A
Other languages
English (en)
Inventor
Masaru Umeda
Original Assignee
Watanabe M & Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Watanabe M & Co Ltd filed Critical Watanabe M & Co Ltd
Publication of TW200636804A publication Critical patent/TW200636804A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
TW094146092A 2004-12-24 2005-12-23 Substrate surface processing apparatus TW200636804A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004373099A JP2006179770A (ja) 2004-12-24 2004-12-24 基板表面処理装置

Publications (1)

Publication Number Publication Date
TW200636804A true TW200636804A (en) 2006-10-16

Family

ID=36601838

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146092A TW200636804A (en) 2004-12-24 2005-12-23 Substrate surface processing apparatus

Country Status (7)

Country Link
US (1) US20070289535A1 (zh)
EP (1) EP1843388A4 (zh)
JP (1) JP2006179770A (zh)
KR (1) KR20070089817A (zh)
CN (1) CN101088146A (zh)
TW (1) TW200636804A (zh)
WO (1) WO2006068241A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI558467B (zh) 2011-03-01 2016-11-21 斯克林集團公司 噴嘴，基板處理裝置及基板處理方法
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
CN114351115A (zh) * 2020-10-12 2022-04-15 聚灿光电科技（宿迁）有限公司 气体输运系统及具有其的mocvd设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3687193A (en) * 1970-12-04 1972-08-29 Daniel James Wright Lobster tank including heat exchange means
US5094885A (en) * 1990-10-12 1992-03-10 Genus, Inc. Differential pressure cvd chuck
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3024940B2 (ja) * 1992-06-24 2000-03-27 アネルバ株式会社 基板処理方法及びｃｖｄ処理方法
KR100427425B1 (ko) * 1995-04-20 2005-08-01 가부시키 가이샤 에바라 세이사꾸쇼 박막증착장치
JP3380091B2 (ja) * 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
US5950925A (en) * 1996-10-11 1999-09-14 Ebara Corporation Reactant gas ejector head
JP4287918B2 (ja) * 1997-09-02 2009-07-01 株式会社渡辺商行 基板表面処理装置
JP3817123B2 (ja) * 2000-08-16 2006-08-30 株式会社アルバック Ｃｖｄ装置
JP2002129331A (ja) * 2000-10-24 2002-05-09 Sony Corp 成膜装置および処理装置
US20030047282A1 (en) * 2001-09-10 2003-03-13 Yasumi Sago Surface processing apparatus
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses

Also Published As

Publication number Publication date
EP1843388A1 (en) 2007-10-10
US20070289535A1 (en) 2007-12-20
EP1843388A4 (en) 2009-04-15
WO2006068241A1 (ja) 2006-06-29
KR20070089817A (ko) 2007-09-03
JP2006179770A (ja) 2006-07-06
CN101088146A (zh) 2007-12-12

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