TW200633813A - CMP method, CMP apparatus, and manufacturing method of semiconductor device - Google Patents
CMP method, CMP apparatus, and manufacturing method of semiconductor deviceInfo
- Publication number
- TW200633813A TW200633813A TW094144997A TW94144997A TW200633813A TW 200633813 A TW200633813 A TW 200633813A TW 094144997 A TW094144997 A TW 094144997A TW 94144997 A TW94144997 A TW 94144997A TW 200633813 A TW200633813 A TW 200633813A
- Authority
- TW
- Taiwan
- Prior art keywords
- cmp
- organic solvent
- insulating film
- interlayer insulating
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000003960 organic solvent Substances 0.000 abstract 5
- 238000004140 cleaning Methods 0.000 abstract 4
- 239000011229 interlayer Substances 0.000 abstract 4
- 239000000126 substance Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000007788 liquid Substances 0.000 abstract 2
- 238000005498 polishing Methods 0.000 abstract 2
- 230000002209 hydrophobic effect Effects 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
-
- C11D2111/22—
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005013734A JP4876215B2 (ja) | 2005-01-21 | 2005-01-21 | Cmp研磨方法、cmp研磨装置、及び半導体デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200633813A true TW200633813A (en) | 2006-10-01 |
TWI386281B TWI386281B (zh) | 2013-02-21 |
Family
ID=36692121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094144997A TWI386281B (zh) | 2005-01-21 | 2005-12-19 | CMP polishing method, CMP polishing apparatus, and manufacturing method of semiconductor element |
Country Status (7)
Country | Link |
---|---|
US (2) | US8241426B2 (zh) |
EP (1) | EP1852898A4 (zh) |
JP (1) | JP4876215B2 (zh) |
KR (2) | KR100893116B1 (zh) |
CN (1) | CN100472728C (zh) |
TW (1) | TWI386281B (zh) |
WO (1) | WO2006077730A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8021490B2 (en) * | 2007-01-04 | 2011-09-20 | Eastman Chemical Company | Substrate cleaning processes through the use of solvents and systems |
JP5435734B2 (ja) * | 2010-05-27 | 2014-03-05 | 富士フイルム株式会社 | 鏡枠部品、レンズ組立体、撮像装置、および鏡枠部品の製造方法 |
CN102489474B (zh) * | 2011-12-15 | 2016-01-13 | 北京石油化工学院 | 除尘装置及除尘式结构 |
JP6253089B2 (ja) * | 2013-12-10 | 2017-12-27 | 株式会社ディスコ | 研削装置 |
WO2017154673A1 (ja) * | 2016-03-08 | 2017-09-14 | 株式会社荏原製作所 | 基板洗浄装置、基板洗浄方法、基板処理装置および基板乾燥装置 |
US20210210353A1 (en) * | 2020-01-07 | 2021-07-08 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Method of processing substrate having polysilicon layer and system thereof |
CN114425534B (zh) * | 2021-12-13 | 2024-04-16 | 金华博蓝特新材料有限公司 | 一种在蓝宝石衬底铜抛后清洗的方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07211681A (ja) | 1994-01-19 | 1995-08-11 | Hitachi Ltd | 洗浄方法および洗浄装置 |
US5855811A (en) * | 1996-10-03 | 1999-01-05 | Micron Technology, Inc. | Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication |
JP4557316B2 (ja) | 1997-07-24 | 2010-10-06 | Okiセミコンダクタ株式会社 | 半導体素子の製造方法、および半導体素子製造用処理室 |
US5968280A (en) * | 1997-11-12 | 1999-10-19 | International Business Machines Corporation | Method for cleaning a surface |
JP3003684B1 (ja) * | 1998-09-07 | 2000-01-31 | 日本電気株式会社 | 基板洗浄方法および基板洗浄液 |
US6123088A (en) * | 1999-12-20 | 2000-09-26 | Chartered Semiconducotor Manufacturing Ltd. | Method and cleaner composition for stripping copper containing residue layers |
KR100773165B1 (ko) * | 1999-12-24 | 2007-11-02 | 가부시키가이샤 에바라 세이사꾸쇼 | 반도체기판처리장치 및 처리방법 |
TW572980B (en) * | 2000-01-12 | 2004-01-21 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process |
TW586157B (en) * | 2000-04-13 | 2004-05-01 | Showa Denko Kk | Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same |
WO2001084621A1 (en) * | 2000-04-27 | 2001-11-08 | Ebara Corporation | Rotation holding device and semiconductor substrate processing device |
US6623343B2 (en) * | 2000-05-12 | 2003-09-23 | Multi Planar Technologies, Inc. | System and method for CMP head having multi-pressure annular zone subcarrier material removal control |
JP2002110679A (ja) | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2002270570A (ja) * | 2001-03-07 | 2002-09-20 | Hitachi Ltd | 半導体装置の製造方法および半導体製造装置 |
KR20040018558A (ko) * | 2001-08-13 | 2004-03-03 | 가부시키 가이샤 에바라 세이사꾸쇼 | 반도체장치와 그 제조방법 및 도금액 |
US6706641B2 (en) * | 2001-09-13 | 2004-03-16 | Micell Technologies, Inc. | Spray member and method for using the same |
JP4025096B2 (ja) * | 2002-03-08 | 2007-12-19 | 株式会社荏原製作所 | 基板処理方法 |
JP2004182773A (ja) | 2002-11-29 | 2004-07-02 | Nec Electronics Corp | 疎水性基板洗浄用液体組成物 |
US6803291B1 (en) * | 2003-03-20 | 2004-10-12 | Taiwan Semiconductor Manufacturing Co., Ltd | Method to preserve alignment mark optical integrity |
JP4375991B2 (ja) * | 2003-04-09 | 2009-12-02 | 関東化学株式会社 | 半導体基板洗浄液組成物 |
JP2005026277A (ja) | 2003-06-30 | 2005-01-27 | Sony Corp | 低誘電率膜の成膜方法 |
US7344988B2 (en) * | 2003-10-27 | 2008-03-18 | Dupont Air Products Nanomaterials Llc | Alumina abrasive for chemical mechanical polishing |
US20050208774A1 (en) * | 2004-01-08 | 2005-09-22 | Akira Fukunaga | Wet processing method and processing apparatus of substrate |
-
2005
- 2005-01-21 JP JP2005013734A patent/JP4876215B2/ja active Active
- 2005-12-19 TW TW094144997A patent/TWI386281B/zh active
- 2005-12-21 CN CNB2005800468330A patent/CN100472728C/zh active Active
- 2005-12-21 KR KR1020077014161A patent/KR100893116B1/ko active IP Right Grant
- 2005-12-21 US US11/795,697 patent/US8241426B2/en active Active
- 2005-12-21 KR KR1020087014014A patent/KR20080058510A/ko not_active Application Discontinuation
- 2005-12-21 WO PCT/JP2005/024001 patent/WO2006077730A1/ja active Application Filing
- 2005-12-21 EP EP05822747A patent/EP1852898A4/en not_active Withdrawn
-
2012
- 2012-07-10 US US13/545,359 patent/US20120315831A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20070095297A (ko) | 2007-09-28 |
US8241426B2 (en) | 2012-08-14 |
US20120315831A1 (en) | 2012-12-13 |
KR20080058510A (ko) | 2008-06-25 |
CN100472728C (zh) | 2009-03-25 |
KR100893116B1 (ko) | 2009-04-14 |
JP2006203027A (ja) | 2006-08-03 |
US20090047785A1 (en) | 2009-02-19 |
EP1852898A4 (en) | 2009-07-15 |
WO2006077730A1 (ja) | 2006-07-27 |
EP1852898A1 (en) | 2007-11-07 |
JP4876215B2 (ja) | 2012-02-15 |
CN101107697A (zh) | 2008-01-16 |
TWI386281B (zh) | 2013-02-21 |
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