TW200632564A - Surface patterning and via manufacturing employing controlled precipitative growth - Google Patents

Surface patterning and via manufacturing employing controlled precipitative growth

Info

Publication number
TW200632564A
TW200632564A TW094144932A TW94144932A TW200632564A TW 200632564 A TW200632564 A TW 200632564A TW 094144932 A TW094144932 A TW 094144932A TW 94144932 A TW94144932 A TW 94144932A TW 200632564 A TW200632564 A TW 200632564A
Authority
TW
Taiwan
Prior art keywords
precipitative
growth
via manufacturing
employing controlled
surface patterning
Prior art date
Application number
TW094144932A
Other languages
English (en)
Inventor
Dirk Burdinski
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200632564A publication Critical patent/TW200632564A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094144932A 2004-12-20 2005-12-16 Surface patterning and via manufacturing employing controlled precipitative growth TW200632564A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04106747 2004-12-20

Publications (1)

Publication Number Publication Date
TW200632564A true TW200632564A (en) 2006-09-16

Family

ID=36129671

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144932A TW200632564A (en) 2004-12-20 2005-12-16 Surface patterning and via manufacturing employing controlled precipitative growth

Country Status (6)

Country Link
US (1) US20090298296A1 (zh)
EP (1) EP1831763A1 (zh)
JP (1) JP2008529807A (zh)
CN (1) CN101084469A (zh)
TW (1) TW200632564A (zh)
WO (1) WO2006067668A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060117A (ja) * 2006-08-29 2008-03-13 Konica Minolta Holdings Inc 有機薄膜トランジスタ及びその製造方法
DE102007029915B4 (de) 2006-12-20 2017-03-30 Lg Display Co., Ltd. Organisches Elektrolumineszenzbauteil und Verfahren zum Herstellen desselben
TWI365551B (en) * 2007-12-14 2012-06-01 Ind Tech Res Inst Method of fabricating a electrical device
US8614445B2 (en) 2009-05-28 2013-12-24 Teijin Limited Alkylsilane laminate, production method thereof and thin-film transistor
CN103721969A (zh) * 2012-10-12 2014-04-16 中国科学院大连化学物理研究所 一种光学基片镀膜前的清洗方法
US9321269B1 (en) * 2014-12-22 2016-04-26 Stmicroelectronics S.R.L. Method for the surface treatment of a semiconductor substrate
ITUB20159489A1 (it) * 2015-12-28 2017-06-28 St Microelectronics Srl Metodo per il trattamento superficiale di un substrato semiconduttore
CN107175939B (zh) * 2016-03-09 2020-02-28 华邦电子股份有限公司 用于印刷线路制程的印章及其制造方法以及印刷线路制程
US10365564B2 (en) * 2017-08-09 2019-07-30 Saudi Arabian Oil Company Calcite channel nanofluidics
US10347540B1 (en) 2017-12-14 2019-07-09 International Business Machines Corporation Gate cut using selective deposition to prevent oxide loss
US10761428B2 (en) * 2018-08-28 2020-09-01 Saudi Arabian Oil Company Fabricating calcite nanofluidic channels
KR102244053B1 (ko) * 2019-05-02 2021-04-23 한국과학기술원 마이크로미터 이하의 필름 패터닝을 위한 저온 스핀코팅 공정 방법 및 장치
US11961702B2 (en) 2021-12-09 2024-04-16 Saudi Arabian Oil Company Fabrication of in situ HR-LCTEM nanofluidic cell for nanobubble interactions during EOR processes in carbonate rocks
US11787993B1 (en) 2022-03-28 2023-10-17 Saudi Arabian Oil Company In-situ foamed gel for lost circulation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518168B1 (en) * 1995-08-18 2003-02-11 President And Fellows Of Harvard College Self-assembled monolayer directed patterning of surfaces
JP2001505003A (ja) * 1997-08-22 2001-04-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄膜マイクロ電子デバイス間に縦方向相互接続部を形成する方法
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
US6413587B1 (en) * 1999-03-02 2002-07-02 International Business Machines Corporation Method for forming polymer brush pattern on a substrate surface
JP2003513475A (ja) * 1999-11-02 2003-04-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄膜超小型電子装置間の垂直相互接続を形成する方法及びそのような垂直相互接続を備えた製品
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
US6767828B2 (en) * 2001-10-05 2004-07-27 International Business Machines Corporation Method for forming patterns for semiconductor devices
US6645293B2 (en) * 2002-03-07 2003-11-11 Illinois Institute Of Technology Molecular crystals of controlled size

Also Published As

Publication number Publication date
CN101084469A (zh) 2007-12-05
EP1831763A1 (en) 2007-09-12
JP2008529807A (ja) 2008-08-07
US20090298296A1 (en) 2009-12-03
WO2006067668A1 (en) 2006-06-29

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