TW200628596A - Slurry for chemical mechanical polishing, composite particle having inorganic particle coating, method for preparation thereof, chemical mechanical polishing method and method for manufacturing electronic device - Google Patents
Slurry for chemical mechanical polishing, composite particle having inorganic particle coating, method for preparation thereof, chemical mechanical polishing method and method for manufacturing electronic deviceInfo
- Publication number
- TW200628596A TW200628596A TW094142069A TW94142069A TW200628596A TW 200628596 A TW200628596 A TW 200628596A TW 094142069 A TW094142069 A TW 094142069A TW 94142069 A TW94142069 A TW 94142069A TW 200628596 A TW200628596 A TW 200628596A
- Authority
- TW
- Taiwan
- Prior art keywords
- mechanical polishing
- chemical mechanical
- slurry
- electronic device
- preparation
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- 238000005498 polishing Methods 0.000 title abstract 5
- 239000000126 substance Substances 0.000 title abstract 5
- 239000010954 inorganic particle Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000002002 slurry Substances 0.000 title abstract 3
- 239000011248 coating agent Substances 0.000 title abstract 2
- 238000000576 coating method Methods 0.000 title abstract 2
- 239000011246 composite particle Substances 0.000 title abstract 2
- 238000002360 preparation method Methods 0.000 title 1
- 239000006061 abrasive grain Substances 0.000 abstract 2
- 150000007530 organic bases Chemical class 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 239000011812 mixed powder Substances 0.000 abstract 1
- 150000002894 organic compounds Chemical class 0.000 abstract 1
- 238000010008 shearing Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004348577 | 2004-12-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200628596A true TW200628596A (en) | 2006-08-16 |
Family
ID=36565061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094142069A TW200628596A (en) | 2004-12-01 | 2005-11-30 | Slurry for chemical mechanical polishing, composite particle having inorganic particle coating, method for preparation thereof, chemical mechanical polishing method and method for manufacturing electronic device |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW200628596A (zh) |
WO (1) | WO2006059627A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI460777B (zh) * | 2009-10-07 | 2014-11-11 | Siltronic Ag | 用於研磨半導體晶圓的方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008000867A (ja) * | 2006-06-26 | 2008-01-10 | Sumitomo Metal Fine Technology Co Ltd | 研磨液、その製造方法、および研磨方法 |
CN102105267B (zh) | 2008-06-18 | 2016-08-03 | 福吉米株式会社 | 抛光组合物及利用该抛光组合物的抛光方法 |
KR101405333B1 (ko) | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | 연마 입자, 연마 슬러리 및 이를 이용한 반도체 소자의 제조 방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3993369B2 (ja) * | 2000-07-14 | 2007-10-17 | 株式会社東芝 | 半導体装置の製造方法 |
-
2005
- 2005-11-30 WO PCT/JP2005/021963 patent/WO2006059627A1/ja active Application Filing
- 2005-11-30 TW TW094142069A patent/TW200628596A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI460777B (zh) * | 2009-10-07 | 2014-11-11 | Siltronic Ag | 用於研磨半導體晶圓的方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2006059627A1 (ja) | 2006-06-08 |
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