TW200742761A - Slurry and method for chemical mechanical polishing - Google Patents

Slurry and method for chemical mechanical polishing

Info

Publication number
TW200742761A
TW200742761A TW096102175A TW96102175A TW200742761A TW 200742761 A TW200742761 A TW 200742761A TW 096102175 A TW096102175 A TW 096102175A TW 96102175 A TW96102175 A TW 96102175A TW 200742761 A TW200742761 A TW 200742761A
Authority
TW
Taiwan
Prior art keywords
slurry
mechanical polishing
chemical mechanical
viscosity
cps
Prior art date
Application number
TW096102175A
Other languages
Chinese (zh)
Other versions
TWI350306B (en
Inventor
Yong-Soo Choi
Jae-Gon Choi
Gyu-Hyun Kim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200742761A publication Critical patent/TW200742761A/en
Application granted granted Critical
Publication of TWI350306B publication Critical patent/TWI350306B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A chemical mechanical polishing slurry, contains an abrasive dispersed in deionized water and an organic viscosity modifier added to adjust the viscosity of the slurry to within a range of 0.5 to 3.2 cps.
TW096102175A 2006-05-12 2007-01-19 Slurry and method for chemical mechanical polishing TWI350306B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060043128 2006-05-12
KR1020060062212A KR100842742B1 (en) 2006-05-12 2006-07-03 Slurry and method for chemical mechanical polishing

Publications (2)

Publication Number Publication Date
TW200742761A true TW200742761A (en) 2007-11-16
TWI350306B TWI350306B (en) 2011-10-11

Family

ID=38897873

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096102175A TWI350306B (en) 2006-05-12 2007-01-19 Slurry and method for chemical mechanical polishing

Country Status (3)

Country Link
KR (1) KR100842742B1 (en)
CN (2) CN102618172A (en)
TW (1) TWI350306B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110120342A (en) * 2019-05-10 2019-08-13 珠海格力电器股份有限公司 Semiconductor technology, the production method of semiconductor devices and semiconductor devices
CN115724590A (en) * 2021-08-31 2023-03-03 广东艾檬电子科技有限公司 Mask structure, etching method and glass structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3768401B2 (en) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 Chemical mechanical polishing slurry

Also Published As

Publication number Publication date
KR100842742B1 (en) 2008-07-01
KR20070109753A (en) 2007-11-15
CN101070453A (en) 2007-11-14
TWI350306B (en) 2011-10-11
CN102618172A (en) 2012-08-01

Similar Documents

Publication Publication Date Title
MY147729A (en) Polishing composition and method utilizing abrasive particles treated with an aminosilane
MY165971A (en) Wire saw process
MX364126B (en) Cement compositions and methods utilizing nano-hydraulic cement.
MY153414A (en) Slurry compositions and methods for making same
TW201612292A (en) Polishing agent and fabricating method thereof, method for polishing substrate, and polishing agent set and fabricating method thereof
MX2009010035A (en) Abrasive articles, rotationally reciprocating tools, and methods.
GEP20115335B (en) Methods of treating surfaces with ionic organosilicon compositions
MY160675A (en) Composition and method for polishing polysilicon
SG171622A1 (en) Polishing composition containing polyether amine
TW200617151A (en) Polishing composition and polishing method using the same
AU2007290605A1 (en) Concentrated abrasive slurry compositions, methods of production, and methods of use thereof
CL2011001557A1 (en) Macroporous abrasive article comprising macroporous structure substrate and coating that includes binder and abrasive aggregates formed from a composition of abrasive grit particles and nanoparticle binder, where the coating is partially embedded in the substrate; and methods.
MY149008A (en) Aqueous fluid compositions for abrasive slurries, methods of production, and methods of use thereof
MY148869A (en) Methods for reducing the viscosity of treatment fluids comprising diutan
AU2003303893A1 (en) Hardenable thermally responsive compositions
TW200614359A (en) Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry
TW200740970A (en) Composition and method to polish silicon nitride
MY148323A (en) Stable, high rate silicon slurry
MY150435A (en) Composition for forming silicon-containing fine pattern and method for forming fine pattern using the same
IL199549A (en) Composition for polishing surface made of silicon dioxide
TW200634137A (en) Metal ion-containing CMP composition and method for using the same
TW200621957A (en) Polishing composition and process for producing wiring structure using it
SG10201407348PA (en) A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles
TNSN07371A1 (en) Method and device for producing concentrated polymer solutions
SG11201805718RA (en) Polishing composition and method for polishing silicon substrate

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees