TW200625606A - MRAM cell with reduced write current - Google Patents

MRAM cell with reduced write current

Info

Publication number
TW200625606A
TW200625606A TW095100050A TW95100050A TW200625606A TW 200625606 A TW200625606 A TW 200625606A TW 095100050 A TW095100050 A TW 095100050A TW 95100050 A TW95100050 A TW 95100050A TW 200625606 A TW200625606 A TW 200625606A
Authority
TW
Taiwan
Prior art keywords
write current
mram
mram cell
reduced write
cell
Prior art date
Application number
TW095100050A
Other languages
English (en)
Other versions
TWI286838B (en
Inventor
Wen-Chin Lin
Denny D Tang
Li-Shyue Lai
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200625606A publication Critical patent/TW200625606A/zh
Application granted granted Critical
Publication of TWI286838B publication Critical patent/TWI286838B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
TW095100050A 2005-01-06 2006-01-02 MRAM cell with reduced write current TWI286838B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/030,453 US7170775B2 (en) 2005-01-06 2005-01-06 MRAM cell with reduced write current

Publications (2)

Publication Number Publication Date
TW200625606A true TW200625606A (en) 2006-07-16
TWI286838B TWI286838B (en) 2007-09-11

Family

ID=36640206

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100050A TWI286838B (en) 2005-01-06 2006-01-02 MRAM cell with reduced write current

Country Status (2)

Country Link
US (1) US7170775B2 (zh)
TW (1) TWI286838B (zh)

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JP3647736B2 (ja) * 2000-09-29 2005-05-18 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
US7580228B1 (en) * 2004-05-29 2009-08-25 Lauer Mark A Current perpendicular to plane sensor with non-rectangular sense layer stack
JP4660249B2 (ja) * 2005-03-31 2011-03-30 株式会社東芝 磁気ランダムアクセスメモリ
JP2007027415A (ja) * 2005-07-15 2007-02-01 Toshiba Corp 磁気記憶装置
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US8508984B2 (en) * 2006-02-25 2013-08-13 Avalanche Technology, Inc. Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
US8018011B2 (en) * 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US8183652B2 (en) * 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
US20070253245A1 (en) * 2006-04-27 2007-11-01 Yadav Technology High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
US8084835B2 (en) * 2006-10-20 2011-12-27 Avalanche Technology, Inc. Non-uniform switching based non-volatile magnetic based memory
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
DE102006038510A1 (de) * 2006-08-17 2008-02-21 Johann Wolfgang Goethe-Universität Frankfurt am Main MRAM-Zelle und Verfahren zum Einspeichern einer Information in eine MRAM-Zelle
KR100763921B1 (ko) * 2006-09-01 2007-10-05 삼성전자주식회사 전류 유도 스위칭을 이용한 자기 메모리 소자
KR100866973B1 (ko) * 2007-07-13 2008-11-05 이화여자대학교 산학협력단 자기 메모리 셀
US8802451B2 (en) 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
US7936597B2 (en) * 2008-03-25 2011-05-03 Seagate Technology Llc Multilevel magnetic storage device
US8098520B2 (en) * 2008-04-25 2012-01-17 Seagate Technology Llc Storage device including a memory cell having multiple memory layers
US7985990B2 (en) * 2008-08-12 2011-07-26 Texas Instruments Incorporated Transistor layout for manufacturing process control
US8344433B2 (en) * 2009-04-14 2013-01-01 Qualcomm Incorporated Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same
EP2546836A1 (en) * 2011-07-12 2013-01-16 Crocus Technology S.A. Magnetic random access memory cell with improved dispersion of the switching field
CN103107281B (zh) 2011-11-15 2015-04-08 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
FR3004577A1 (zh) 2013-04-15 2014-10-17 Commissariat Energie Atomique
FR3004576B1 (fr) 2013-04-15 2019-11-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule memoire avec memorisation de donnees non volatile
FR3009421B1 (fr) * 2013-07-30 2017-02-24 Commissariat Energie Atomique Cellule memoire non volatile
US9472749B2 (en) 2014-03-20 2016-10-18 International Business Machines Corporation Armature-clad MRAM device
US9589615B2 (en) * 2015-06-25 2017-03-07 Intel Corporation Digitally trimmable integrated resistors including resistive memory elements
US11985904B2 (en) * 2020-04-22 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing MRAM device with enhanced etch control
US12004431B2 (en) 2020-10-30 2024-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for MRAM devices
US11659771B2 (en) 2020-11-25 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for integrating MRAM and logic devices
US11856854B2 (en) 2021-04-09 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device structures and method of fabricating the same

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US6114719A (en) 1998-05-29 2000-09-05 International Business Machines Corporation Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell
US6005800A (en) 1998-11-23 1999-12-21 International Business Machines Corporation Magnetic memory array with paired asymmetric memory cells for improved write margin
JP3593652B2 (ja) 2000-03-03 2004-11-24 富士通株式会社 磁気ランダムアクセスメモリ装置
US6515897B1 (en) 2000-04-13 2003-02-04 International Business Machines Corporation Magnetic random access memory using a non-linear memory element select mechanism
US6424561B1 (en) * 2000-07-18 2002-07-23 Micron Technology, Inc. MRAM architecture using offset bits for increased write selectivity
US6335890B1 (en) 2000-11-01 2002-01-01 International Business Machines Corporation Segmented write line architecture for writing magnetic random access memories
FR2817999B1 (fr) 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
JP3920564B2 (ja) 2000-12-25 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
JP2002270790A (ja) 2000-12-27 2002-09-20 Toshiba Corp 半導体記憶装置
US6522579B2 (en) 2001-01-24 2003-02-18 Infineon Technologies, Ag Non-orthogonal MRAM device
JP4818519B2 (ja) 2001-02-06 2011-11-16 ルネサスエレクトロニクス株式会社 磁気記憶装置
US6590803B2 (en) 2001-03-27 2003-07-08 Kabushiki Kaisha Toshiba Magnetic memory device
JP2002334972A (ja) 2001-05-10 2002-11-22 Sony Corp 磁気メモリ装置
US6490217B1 (en) 2001-05-23 2002-12-03 International Business Machines Corporation Select line architecture for magnetic random access memories
US6693826B1 (en) 2001-07-30 2004-02-17 Iowa State University Research Foundation, Inc. Magnetic memory sensing method and apparatus
US6777730B2 (en) 2001-08-31 2004-08-17 Nve Corporation Antiparallel magnetoresistive memory cells
US6946712B2 (en) 2001-11-07 2005-09-20 Kabushiki Kaisha Toshiba Magnetic memory device using SOI substrate
US6594191B2 (en) 2001-12-13 2003-07-15 Infineon Technologies Ag Segmented write line architecture
US6809958B2 (en) * 2002-09-13 2004-10-26 Hewlett-Packard Development Company, L.P. MRAM parallel conductor orientation for improved write performance
JP2004185755A (ja) * 2002-12-05 2004-07-02 Sharp Corp 不揮発性半導体記憶装置
US6909631B2 (en) * 2003-10-02 2005-06-21 Freescale Semiconductor, Inc. MRAM and methods for reading the MRAM
US6711053B1 (en) * 2003-01-29 2004-03-23 Taiwan Semiconductor Manufacturing Company Scaleable high performance magnetic random access memory cell and array
US6917087B2 (en) * 2003-02-21 2005-07-12 Micron Technology, Inc. Tilted array geometry for improved MRAM switching
US7057253B2 (en) * 2003-06-19 2006-06-06 Infineon Technologies Ag Combination of intrinsic and shape anisotropy for reduced switching field fluctuations

Also Published As

Publication number Publication date
TWI286838B (en) 2007-09-11
US7170775B2 (en) 2007-01-30
US20060146602A1 (en) 2006-07-06

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