TW200625320A - Nonvolatile memory devices and programming methods using subsets of columns - Google Patents

Nonvolatile memory devices and programming methods using subsets of columns

Info

Publication number
TW200625320A
TW200625320A TW094142259A TW94142259A TW200625320A TW 200625320 A TW200625320 A TW 200625320A TW 094142259 A TW094142259 A TW 094142259A TW 94142259 A TW94142259 A TW 94142259A TW 200625320 A TW200625320 A TW 200625320A
Authority
TW
Taiwan
Prior art keywords
columns
column address
nonvolatile memory
memory devices
subsets
Prior art date
Application number
TW094142259A
Other languages
English (en)
Other versions
TWI303431B (en
Inventor
Ho-Kil Lee
Jin-Yub Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200625320A publication Critical patent/TW200625320A/zh
Application granted granted Critical
Publication of TWI303431B publication Critical patent/TWI303431B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
TW094142259A 2004-12-01 2005-12-01 Nonvolatile memory devices and programming methods using subsets of columns TWI303431B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040099953A KR100590219B1 (ko) 2004-12-01 2004-12-01 프로그램 시간을 줄일 수 있는 불 휘발성 메모리 장치

Publications (2)

Publication Number Publication Date
TW200625320A true TW200625320A (en) 2006-07-16
TWI303431B TWI303431B (en) 2008-11-21

Family

ID=36441914

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142259A TWI303431B (en) 2004-12-01 2005-12-01 Nonvolatile memory devices and programming methods using subsets of columns

Country Status (6)

Country Link
US (1) US7652948B2 (zh)
JP (1) JP4931404B2 (zh)
KR (1) KR100590219B1 (zh)
CN (1) CN100555455C (zh)
DE (1) DE102005057112B4 (zh)
TW (1) TWI303431B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100618902B1 (ko) * 2005-06-17 2006-09-01 삼성전자주식회사 프로그램 검증 판독 중 열 스캔을 통해 프로그램 시간을단축시킬 수 있는 플래시 메모리 장치의 프로그램 방법
KR100884234B1 (ko) 2007-05-25 2009-02-18 삼성전자주식회사 프로그램 성능을 향상시킬 수 있는 플래시 메모리 장치 및그것의 프로그램 방법
US8433980B2 (en) * 2008-06-23 2013-04-30 Sandisk Il Ltd. Fast, low-power reading of data in a flash memory
KR101625641B1 (ko) * 2010-04-08 2016-05-30 삼성전자주식회사 비휘발성 메모리 장치, 이의 동작 방법 및 이를 포함하는 장치들
CN101923570B (zh) * 2010-07-21 2012-07-04 中国电子科技集团公司第三十八研究所 一种在Windows CE环境下建立大页面Nand Flash存储系统的方法
US8374031B2 (en) * 2010-09-29 2013-02-12 SanDisk Technologies, Inc. Techniques for the fast settling of word lines in NAND flash memory
US8837223B2 (en) * 2011-11-21 2014-09-16 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for manufacuring the same
KR102029933B1 (ko) * 2012-09-04 2019-10-10 에스케이하이닉스 주식회사 불휘발성 메모리 장치 및 그것을 포함하는 데이터 저장 장치
US10055351B1 (en) 2016-06-29 2018-08-21 EMC IP Holding Company LLC Low-overhead index for a flash cache
US10331561B1 (en) 2016-06-29 2019-06-25 Emc Corporation Systems and methods for rebuilding a cache index
US10146438B1 (en) 2016-06-29 2018-12-04 EMC IP Holding Company LLC Additive library for data structures in a flash memory
US10089025B1 (en) 2016-06-29 2018-10-02 EMC IP Holding Company LLC Bloom filters in a flash memory
US10037164B1 (en) * 2016-06-29 2018-07-31 EMC IP Holding Company LLC Flash interface for processing datasets
KR102650603B1 (ko) * 2018-07-24 2024-03-27 삼성전자주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 제어하는 메모리 컨트롤러의 동작 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0172441B1 (ko) 1995-09-19 1999-03-30 김광호 불휘발성 반도체 메모리의 프로그램 방법
KR100223614B1 (ko) * 1996-11-12 1999-10-15 윤종용 불휘발성 반도체 메모리 장치
US5991202A (en) 1998-09-24 1999-11-23 Advanced Micro Devices, Inc. Method for reducing program disturb during self-boosting in a NAND flash memory
JP3110395B2 (ja) * 1998-09-30 2000-11-20 九州日本電気株式会社 ベリファイ装置
US6469955B1 (en) * 2000-11-21 2002-10-22 Integrated Memory Technologies, Inc. Integrated circuit memory device having interleaved read and program capabilities and methods of operating same
KR100347866B1 (ko) 1999-03-08 2002-08-09 삼성전자 주식회사 낸드 플래시 메모리 장치
JP4056173B2 (ja) * 1999-04-14 2008-03-05 富士通株式会社 半導体記憶装置および該半導体記憶装置のリフレッシュ方法
US6385113B1 (en) * 1999-04-30 2002-05-07 Madrone Solutions, Inc Method for operating an integrated circuit having a sleep mode
DE10043397B4 (de) * 1999-09-06 2007-02-08 Samsung Electronics Co., Ltd., Suwon Flash-Speicherbauelement mit Programmierungszustandsfeststellungsschaltung und das Verfahren dafür
KR100343285B1 (ko) 2000-02-11 2002-07-15 윤종용 프로그램 시간을 단축시킬 수 있는 플래시 메모리 장치의프로그램 방법
US6463516B1 (en) * 2000-04-25 2002-10-08 Advanced Micro Devices, Inc. Variable sector size for a high density flash memory device
JP2001357682A (ja) 2000-06-12 2001-12-26 Sony Corp メモリシステムおよびそのプログラム方法
US6377507B1 (en) * 2001-04-06 2002-04-23 Integrated Memory Technologies, Inc. Non-volatile memory device having high speed page mode operation
KR100543452B1 (ko) * 2003-04-18 2006-01-23 삼성전자주식회사 부분 프로그램에 따른 프로그램 디스터브를 방지할 수있는 플래시 메모리 장치
KR100463195B1 (ko) * 2001-08-28 2004-12-23 삼성전자주식회사 가속 열 스캔닝 스킴을 갖는 불 휘발성 반도체 메모리 장치
US6687158B2 (en) 2001-12-21 2004-02-03 Fujitsu Limited Gapless programming for a NAND type flash memory
US6836432B1 (en) 2002-02-11 2004-12-28 Advanced Micro Devices, Inc. Partial page programming of multi level flash
JP4122824B2 (ja) 2002-04-24 2008-07-23 沖電気工業株式会社 不揮発性記憶装置のデ−タ転送制御回路，不揮発性記憶装置の書き換え回路，及び，通信制御装置
JP4170682B2 (ja) 2002-06-18 2008-10-22 株式会社東芝 不揮発性半導体メモリ装置
KR100496866B1 (ko) 2002-12-05 2005-06-22 삼성전자주식회사 미프로그램된 셀들 및 과프로그램된 셀들 없이 균일한문턱 전압 분포를 갖는 플레쉬 메모리 장치 및 그프로그램 검증 방법
KR100600303B1 (ko) * 2004-05-14 2006-07-13 주식회사 하이닉스반도체 플래쉬 메모리 소자의 페이지 프로그램 방법
US7080755B2 (en) * 2004-09-13 2006-07-25 Michael Handfield Smart tray for dispensing medicaments

Also Published As

Publication number Publication date
US20060114730A1 (en) 2006-06-01
KR20060061085A (ko) 2006-06-07
JP2006155871A (ja) 2006-06-15
DE102005057112B4 (de) 2011-01-20
DE102005057112A1 (de) 2006-06-08
JP4931404B2 (ja) 2012-05-16
CN1808622A (zh) 2006-07-26
CN100555455C (zh) 2009-10-28
TWI303431B (en) 2008-11-21
KR100590219B1 (ko) 2006-06-19
US7652948B2 (en) 2010-01-26

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