TW200624583A - Copper alloy for semiconductor interconnections, fabrication method thereof, semiconductor device having copper alloy interconnections fabricated by the method, and sputtering target for fabricating copper alloy interconnections for semiconductors - Google Patents

Copper alloy for semiconductor interconnections, fabrication method thereof, semiconductor device having copper alloy interconnections fabricated by the method, and sputtering target for fabricating copper alloy interconnections for semiconductors

Info

Publication number
TW200624583A
TW200624583A TW094132342A TW94132342A TW200624583A TW 200624583 A TW200624583 A TW 200624583A TW 094132342 A TW094132342 A TW 094132342A TW 94132342 A TW94132342 A TW 94132342A TW 200624583 A TW200624583 A TW 200624583A
Authority
TW
Taiwan
Prior art keywords
interconnections
copper alloy
semiconductor
semiconductors
sputtering target
Prior art date
Application number
TW094132342A
Other languages
English (en)
Other versions
TWI291496B (en
Inventor
Masao Mizuno
Takashi Onishi
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Publication of TW200624583A publication Critical patent/TW200624583A/zh
Application granted granted Critical
Publication of TWI291496B publication Critical patent/TWI291496B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76882—Reflowing or applying of pressure to better fill the contact hole

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094132342A 2004-09-27 2005-09-19 Copper alloy for semiconductor interconnections, fabrication method thereof, semiconductor device having copper alloy interconnections fabricated by the method, and sputtering target for fabricating copper alloy interconnections for semiconductors TWI291496B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004280444A JP4377788B2 (ja) 2004-09-27 2004-09-27 半導体配線用Ｃｕ合金、Ｃｕ合金配線の製法、該製法で得られたＣｕ合金配線を有する半導体装置、並びに半導体のＣｕ合金配線形成用スパッタリングターゲット

Publications (2)

Publication Number Publication Date
TW200624583A true TW200624583A (en) 2006-07-16
TWI291496B TWI291496B (en) 2007-12-21

Family

ID=36099781

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094132342A TWI291496B (en) 2004-09-27 2005-09-19 Copper alloy for semiconductor interconnections, fabrication method thereof, semiconductor device having copper alloy interconnections fabricated by the method, and sputtering target for fabricating copper alloy interconnections for semiconductors

Country Status (4)

Country Link
US (1) US7385293B2 (zh)
JP (1) JP4377788B2 (zh)
KR (1) KR100654520B1 (zh)
TW (1) TWI291496B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008277339A (ja) * 2007-04-25 2008-11-13 Tdk Corp 電子部品およびその製造方法
JP5464667B2 (ja) * 2010-12-17 2014-04-09 三井金属鉱業株式会社 配線用Ｃｕ合金を用いた接続構造及び配線用Ｃｕ合金からなるスパッタリングターゲット
JP5165100B1 (ja) * 2011-11-01 2013-03-21 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
KR102661959B1 (ko) * 2018-09-20 2024-04-30 삼성전자주식회사 반도체 장치 및 이를 포함하는 반도체 패키지

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11191556A (ja) 1997-12-26 1999-07-13 Sony Corp 半導体装置の製造方法および銅または銅合金パターンの形成方法
JP3939426B2 (ja) 1998-03-13 2007-07-04 株式会社アルバック 銅系配線膜の加圧埋込方法
US6413330B1 (en) * 1998-10-12 2002-07-02 Sambo Copper Alloy Co., Ltd. Lead-free free-cutting copper alloys
JP4783525B2 (ja) 2001-08-31 2011-09-28 株式会社アルバック 薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット
US7074709B2 (en) * 2002-06-28 2006-07-11 Texas Instruments Incorporated Localized doping and/or alloying of metallization for increased interconnect performance
JP2004193546A (ja) 2002-10-17 2004-07-08 Mitsubishi Materials Corp 半導体装置配線シード層形成用銅合金スパッタリングターゲット
JP2004193553A (ja) 2002-10-17 2004-07-08 Mitsubishi Materials Corp 半導体装置配線シード層形成用銅合金スパッタリングターゲットおよびこのターゲットを用いて形成したシード層
US20040076541A1 (en) * 2002-10-22 2004-04-22 Laughlin John P. Friction-resistant alloy for use as a bearing
JP4794802B2 (ja) 2002-11-21 2011-10-19 Ｊｘ日鉱日石金属株式会社 銅合金スパッタリングターゲット及び半導体素子配線
US7545040B2 (en) 2002-12-09 2009-06-09 Nec Corporation Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
EP1602747B1 (en) 2003-03-17 2011-03-30 Nippon Mining & Metals Co., Ltd. Process for producing copper alloy sputtering target
JP4266360B2 (ja) * 2004-07-26 2009-05-20 株式会社神戸製鋼所 半導体装置のＣｕ系配線形成方法
KR100701641B1 (ko) * 2004-08-02 2007-03-30 도레이새한 주식회사 진공증착에 의해 구리도금층을 형성하는 연성회로기판용 적층구조체의 제조방법 및 그 장치

Also Published As

Publication number Publication date
JP2006093629A (ja) 2006-04-06
TWI291496B (en) 2007-12-21
KR20060051651A (ko) 2006-05-19
KR100654520B1 (ko) 2006-12-06
JP4377788B2 (ja) 2009-12-02
US7385293B2 (en) 2008-06-10
US20060068587A1 (en) 2006-03-30

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MM4A Annulment or lapse of patent due to non-payment of fees