TW200623260A - Methods of removing photoresist on substrates - Google Patents

Methods of removing photoresist on substrates

Info

Publication number
TW200623260A
TW200623260A TW094130702A TW94130702A TW200623260A TW 200623260 A TW200623260 A TW 200623260A TW 094130702 A TW094130702 A TW 094130702A TW 94130702 A TW94130702 A TW 94130702A TW 200623260 A TW200623260 A TW 200623260A
Authority
TW
Taiwan
Prior art keywords
layer
methods
gas
rich layer
carbon
Prior art date
Application number
TW094130702A
Other languages
English (en)
Inventor
Erik A Edelberg
Robert P Chebi
Alex F Panchula
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200623260A publication Critical patent/TW200623260A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
TW094130702A 2004-09-07 2005-09-07 Methods of removing photoresist on substrates TW200623260A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/934,697 US20060051965A1 (en) 2004-09-07 2004-09-07 Methods of etching photoresist on substrates

Publications (1)

Publication Number Publication Date
TW200623260A true TW200623260A (en) 2006-07-01

Family

ID=35996819

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094130702A TW200623260A (en) 2004-09-07 2005-09-07 Methods of removing photoresist on substrates

Country Status (7)

Country Link
US (2) US20060051965A1 (zh)
JP (1) JP2008512854A (zh)
KR (1) KR20070100689A (zh)
CN (1) CN101015042A (zh)
IL (1) IL181371A0 (zh)
TW (1) TW200623260A (zh)
WO (1) WO2006028858A2 (zh)

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US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US7605063B2 (en) * 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates
TWI437633B (zh) * 2006-05-24 2014-05-11 Ulvac Inc Dry etching method for interlayer insulating film
KR100780660B1 (ko) * 2006-07-04 2007-11-30 주식회사 하이닉스반도체 높은 도즈의 이온주입배리어로 사용된 감광막의 스트립방법
US20080009127A1 (en) 2006-07-04 2008-01-10 Hynix Semiconductor Inc. Method of removing photoresist
JP2008047822A (ja) * 2006-08-21 2008-02-28 Toshiba Corp 半導体装置の製造方法
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US8435895B2 (en) 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US20080261384A1 (en) * 2007-04-18 2008-10-23 United Microelectronics Corp. Method of removing photoresist layer and method of fabricating semiconductor device using the same
TWI368963B (en) * 2008-07-18 2012-07-21 Inotera Memories Inc An analysis method of wafer's ion implant
KR101791685B1 (ko) * 2008-10-14 2017-11-20 노벨러스 시스템즈, 인코포레이티드 수소 이용 화학 반응으로 고용량 주입 스트립(ｈｄｉｓ) 방법 및 장치
US8273259B1 (en) 2009-01-17 2012-09-25 Novellus Systems, Inc. Ashing method
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
KR101770008B1 (ko) 2009-12-11 2017-08-21 노벨러스 시스템즈, 인코포레이티드 고주입량 주입 박리 전에 실리콘을 보호하기 위한 개선된 패시베이션 공정
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
US8304262B2 (en) * 2011-02-17 2012-11-06 Lam Research Corporation Wiggling control for pseudo-hardmask
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
CN102651370B (zh) * 2012-01-04 2014-12-10 京东方科技集团股份有限公司 一种tft阵列基板、制造方法及显示装置
CN102610496B (zh) * 2012-03-31 2017-11-07 上海集成电路研发中心有限公司 大高宽比结构的去胶方法
CN103887601B (zh) * 2012-12-20 2015-10-28 中国科学院上海微系统与信息技术研究所 折叠槽天线结构及其制作方法
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US9520290B1 (en) * 2015-08-21 2016-12-13 Varian Semiconductor Equipment Associates, Inc. Ion implantation for improved etch performance
US9735013B2 (en) * 2015-12-16 2017-08-15 Varian Semiconductor Equipment Associates, Inc. Ion implantation for improved contact hole critical dimension uniformity
CN109659231B (zh) * 2018-12-27 2021-04-13 上海华力集成电路制造有限公司 光刻胶剥离工艺中改善器件均一性的方法

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US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US5968374A (en) * 1997-03-20 1999-10-19 Lam Research Corporation Methods and apparatus for controlled partial ashing in a variable-gap plasma processing chamber
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US6693043B1 (en) * 2002-09-20 2004-02-17 Novellus Systems, Inc. Method for removing photoresist from low-k films in a downstream plasma system
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US7083903B2 (en) * 2003-06-17 2006-08-01 Lam Research Corporation Methods of etching photoresist on substrates

Also Published As

Publication number Publication date
WO2006028858A2 (en) 2006-03-16
US20080182422A1 (en) 2008-07-31
WO2006028858A3 (en) 2006-07-27
KR20070100689A (ko) 2007-10-11
US20060051965A1 (en) 2006-03-09
CN101015042A (zh) 2007-08-08
JP2008512854A (ja) 2008-04-24
IL181371A0 (en) 2008-03-20

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