TW200620305A - Memory card, semiconductor device, and method of controlling semiconductor memory - Google Patents

Memory card, semiconductor device, and method of controlling semiconductor memory

Info

Publication number
TW200620305A
TW200620305A TW094116103A TW94116103A TW200620305A TW 200620305 A TW200620305 A TW 200620305A TW 094116103 A TW094116103 A TW 094116103A TW 94116103 A TW94116103 A TW 94116103A TW 200620305 A TW200620305 A TW 200620305A
Authority
TW
Taiwan
Prior art keywords
memory
semiconductor device
data
semiconductor
written
Prior art date
Application number
TW094116103A
Other languages
English (en)
Other versions
TWI280585B (en
Inventor
Takashi Oshima
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200620305A publication Critical patent/TW200620305A/zh
Application granted granted Critical
Publication of TWI280585B publication Critical patent/TWI280585B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Credit Cards Or The Like (AREA)
TW094116103A 2004-05-27 2005-05-18 Memory card, semiconductor device, and method of controlling semiconductor memory TWI280585B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004157541A JP4253272B2 (ja) 2004-05-27 2004-05-27 メモリカード、半導体装置、及び半導体メモリの制御方法

Publications (2)

Publication Number Publication Date
TW200620305A true TW200620305A (en) 2006-06-16
TWI280585B TWI280585B (en) 2007-05-01

Family

ID=35426729

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116103A TWI280585B (en) 2004-05-27 2005-05-18 Memory card, semiconductor device, and method of controlling semiconductor memory

Country Status (5)

Country Link
US (2) US7278001B2 (zh)
JP (1) JP4253272B2 (zh)
KR (1) KR100687151B1 (zh)
CN (1) CN1702776A (zh)
TW (1) TWI280585B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100784862B1 (ko) 2006-01-09 2007-12-14 삼성전자주식회사 더미 셀을 포함하는 플래시 메모리 장치
JP2007233838A (ja) * 2006-03-02 2007-09-13 Toshiba Corp メモリシステムの制御方法
JP2007249662A (ja) * 2006-03-16 2007-09-27 Toshiba Corp メモリカード及びメモリカードの制御方法
JP5002201B2 (ja) * 2006-06-30 2012-08-15 株式会社東芝 メモリシステム
KR100843135B1 (ko) * 2006-11-20 2008-07-02 삼성전자주식회사 비휘발성 메모리 관리 방법 및 장치
JP2008152464A (ja) * 2006-12-15 2008-07-03 Toshiba Corp 記憶装置
TW200935422A (en) 2008-02-05 2009-08-16 Phison Electronics Corp Flash memory data writing method and controller thereof
US8645617B2 (en) * 2008-12-09 2014-02-04 Rambus Inc. Memory device for concurrent and pipelined memory operations
CN101944386B (zh) * 2009-07-03 2013-11-13 群联电子股份有限公司 识别闪速存储器中错误数据的控制电路及存储系统与方法
CN101996140B (zh) * 2009-08-12 2013-08-21 群联电子股份有限公司 用于闪速存储器的数据写入方法及其控制电路与储存系统
TWI399643B (zh) * 2009-12-31 2013-06-21 Phison Electronics Corp 快閃記憶體儲存系統及其控制器與資料寫入方法
TWI409633B (zh) * 2010-02-04 2013-09-21 Phison Electronics Corp 快閃記憶體儲存裝置、其控制器與資料寫入方法
JP5010723B2 (ja) * 2010-09-22 2012-08-29 株式会社東芝 半導体記憶制御装置
US10031845B2 (en) * 2016-04-01 2018-07-24 Intel Corporation Method and apparatus for processing sequential writes to a block group of physical blocks in a memory device
US10019198B2 (en) 2016-04-01 2018-07-10 Intel Corporation Method and apparatus for processing sequential writes to portions of an addressable unit
JP2018092654A (ja) * 2018-02-20 2018-06-14 株式会社ニコン 電子機器
KR20200076403A (ko) * 2018-12-19 2020-06-29 에스케이하이닉스 주식회사 반도체 메모리 장치, 컨트롤러, 이들을 포함하는 저장 장치 및 그들의 동작 방법
CN114207822A (zh) * 2021-11-03 2022-03-18 长江存储科技有限责任公司 用于增强可靠性的三维存储器件和制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5845313A (en) * 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5745418A (en) 1996-11-25 1998-04-28 Macronix International Co., Ltd. Flash memory mass storage system
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
KR100389867B1 (ko) * 2001-06-04 2003-07-04 삼성전자주식회사 플래시 메모리 관리방법
JP2002133877A (ja) 2001-09-03 2002-05-10 Toshiba Corp 不揮発性半導体記憶装置
US6678785B2 (en) 2001-09-28 2004-01-13 M-Systems Flash Disk Pioneers Ltd. Flash management system using only sequential write
JP2004062328A (ja) 2002-07-25 2004-02-26 Renesas Technology Corp Ｎａｎｄ型フラッシュメモリを搭載したフラッシュストレージメディア
CA2461446A1 (en) 2002-08-29 2004-03-11 Matsushita Electric Industrial Co., Ltd. Semiconductor memory apparatus and method for writing data into the flash memory device
JP2004133677A (ja) 2002-10-10 2004-04-30 Renesas Technology Corp 記憶装置

Also Published As

Publication number Publication date
JP4253272B2 (ja) 2009-04-08
JP2005339231A (ja) 2005-12-08
US7814264B2 (en) 2010-10-12
KR20060046181A (ko) 2006-05-17
US20070300011A1 (en) 2007-12-27
US20050268026A1 (en) 2005-12-01
US7278001B2 (en) 2007-10-02
TWI280585B (en) 2007-05-01
KR100687151B1 (ko) 2007-02-27
CN1702776A (zh) 2005-11-30

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees