TW200618086A - Substrate treating device - Google Patents

Substrate treating device

Info

Publication number
TW200618086A
TW200618086A TW094132597A TW94132597A TW200618086A TW 200618086 A TW200618086 A TW 200618086A TW 094132597 A TW094132597 A TW 094132597A TW 94132597 A TW94132597 A TW 94132597A TW 200618086 A TW200618086 A TW 200618086A
Authority
TW
Taiwan
Prior art keywords
treating
substrate
drying
bath
treating bath
Prior art date
Application number
TW094132597A
Other languages
English (en)
Inventor
Katsuyoshi Nakatsukasa
Hiroshi Yamaguchi
Kazuhisa Ogasawara
Hiroshi Kizawa
Original Assignee
Ses Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ses Co Ltd filed Critical Ses Co Ltd
Publication of TW200618086A publication Critical patent/TW200618086A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
TW094132597A 2004-09-22 2005-09-21 Substrate treating device TW200618086A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004275679A JP2006093334A (ja) 2004-09-22 2004-09-22 基板処理装置

Publications (1)

Publication Number Publication Date
TW200618086A true TW200618086A (en) 2006-06-01

Family

ID=36089952

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094132597A TW200618086A (en) 2004-09-22 2005-09-21 Substrate treating device

Country Status (6)

Country Link
US (1) US20080035182A1 (zh)
JP (1) JP2006093334A (zh)
KR (1) KR20070055515A (zh)
CN (1) CN101073146A (zh)
TW (1) TW200618086A (zh)
WO (1) WO2006033186A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7775219B2 (en) 2006-12-29 2010-08-17 Applied Materials, Inc. Process chamber lid and controlled exhaust
US7694688B2 (en) 2007-01-05 2010-04-13 Applied Materials, Inc. Wet clean system design
KR20080086686A (ko) * 2007-03-23 2008-09-26 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP5154991B2 (ja) * 2008-03-27 2013-02-27 大日本スクリーン製造株式会社 基板処理装置
KR20110001273A (ko) * 2009-06-30 2011-01-06 세메스 주식회사 기판 처리 방법 및 장치
KR20120028079A (ko) * 2010-09-14 2012-03-22 삼성모바일디스플레이주식회사 기판의 세정 장치 및 세정 방법
JP5497607B2 (ja) * 2010-10-01 2014-05-21 ファインマシーンカタオカ株式会社 カプセル型の洗浄機
JP5630527B2 (ja) * 2013-04-12 2014-11-26 株式会社Sumco 貼合せsoiウェーハの製造方法
JP6426927B2 (ja) * 2013-09-30 2018-11-21 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6316657B2 (ja) * 2014-05-26 2018-04-25 株式会社長英 デジタル印刷機用インキ洗浄台
JP6454605B2 (ja) * 2015-06-01 2019-01-16 東芝メモリ株式会社 基板処理方法および基板処理装置
JP6559602B2 (ja) * 2015-09-18 2019-08-14 東京エレクトロン株式会社 基板処理装置および処理チャンバ洗浄方法
CN106128983A (zh) * 2016-08-30 2016-11-16 上海华力微电子有限公司 一种提高清洗效率的湿法清洗水槽及其清洗方法
CN107086188B (zh) * 2016-09-09 2020-07-03 深圳市新纶科技股份有限公司 一种晶元清洗装置
US11532493B2 (en) * 2018-07-30 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Wet bench and chemical treatment method using the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3363557B2 (ja) * 1993-12-28 2003-01-08 富士通株式会社 一槽式処理装置
JP4286336B2 (ja) * 1997-01-24 2009-06-24 東京エレクトロン株式会社 洗浄装置及び洗浄方法
JP3839553B2 (ja) * 1997-06-05 2006-11-01 大日本スクリーン製造株式会社 基板処理槽および基板処理装置
US6164297A (en) * 1997-06-13 2000-12-26 Tokyo Electron Limited Cleaning and drying apparatus for objects to be processed
KR100445259B1 (ko) * 2001-11-27 2004-08-21 삼성전자주식회사 세정방법 및 이를 수행하기 위한 세정 장치
JP2004095710A (ja) * 2002-08-30 2004-03-25 Dainippon Screen Mfg Co Ltd 基板処理装置

Also Published As

Publication number Publication date
WO2006033186A1 (ja) 2006-03-30
CN101073146A (zh) 2007-11-14
KR20070055515A (ko) 2007-05-30
US20080035182A1 (en) 2008-02-14
JP2006093334A (ja) 2006-04-06

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