TW200611270A - Chalcogenide memory - Google Patents

Chalcogenide memory

Info

Publication number
TW200611270A
TW200611270A TW094133048A TW94133048A TW200611270A TW 200611270 A TW200611270 A TW 200611270A TW 094133048 A TW094133048 A TW 094133048A TW 94133048 A TW94133048 A TW 94133048A TW 200611270 A TW200611270 A TW 200611270A
Authority
TW
Taiwan
Prior art keywords
memory
chalcogenide memory
threshold
switching material
bottom electrode
Prior art date
Application number
TW094133048A
Other languages
English (en)
Other versions
TWI313863B (en
Inventor
Yi-Chou Chen
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/948,891 external-priority patent/US20050041467A1/en
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Publication of TW200611270A publication Critical patent/TW200611270A/zh
Application granted granted Critical
Publication of TWI313863B publication Critical patent/TWI313863B/zh

Links

Landscapes

  • Semiconductor Memories (AREA)
TW94133048A 2004-09-24 2005-09-23 Chalcogenide memory and operating method thereof TWI313863B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/948,891 US20050041467A1 (en) 2003-06-18 2004-09-24 Chalcogenide memory

Publications (2)

Publication Number Publication Date
TW200611270A true TW200611270A (en) 2006-04-01
TWI313863B TWI313863B (en) 2009-08-21

Family

ID=36751613

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94133048A TWI313863B (en) 2004-09-24 2005-09-23 Chalcogenide memory and operating method thereof

Country Status (2)

Country Link
CN (2) CN1770494B (zh)
TW (1) TWI313863B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120130939A (ko) * 2011-05-24 2012-12-04 에스케이하이닉스 주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조 방법
CN107924699A (zh) * 2015-04-24 2018-04-17 李武开 用于2d/3d阶层式nand的部分/完整阵列/块擦除
US10134470B2 (en) 2015-11-04 2018-11-20 Micron Technology, Inc. Apparatuses and methods including memory and operation of same
US9978810B2 (en) * 2015-11-04 2018-05-22 Micron Technology, Inc. Three-dimensional memory apparatuses and methods of use
KR102410947B1 (ko) * 2015-11-20 2022-06-22 에스케이하이닉스 주식회사 문턱 스위칭 장치 및 이를 포함하는 전자 장치
CN105788632B (zh) * 2016-02-26 2019-04-02 江苏时代全芯存储科技有限公司 记忆体电路
US10446226B2 (en) 2016-08-08 2019-10-15 Micron Technology, Inc. Apparatuses including multi-level memory cells and methods of operation of same
CN106898371B (zh) * 2017-02-24 2020-08-28 中国科学院上海微系统与信息技术研究所 三维存储器读出电路及其字线与位线电压配置方法
CN107644664A (zh) * 2017-09-27 2018-01-30 中国科学院上海微系统与信息技术研究所 三维垂直型存储器电路及位线与字线电压配置方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5761115A (en) * 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same

Also Published As

Publication number Publication date
CN1770494A (zh) 2006-05-10
CN101702328B (zh) 2013-03-06
CN1770494B (zh) 2010-05-05
CN101702328A (zh) 2010-05-05
TWI313863B (en) 2009-08-21

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