TW200611270A - Chalcogenide memory - Google Patents
Chalcogenide memoryInfo
- Publication number
- TW200611270A TW200611270A TW094133048A TW94133048A TW200611270A TW 200611270 A TW200611270 A TW 200611270A TW 094133048 A TW094133048 A TW 094133048A TW 94133048 A TW94133048 A TW 94133048A TW 200611270 A TW200611270 A TW 200611270A
- Authority
- TW
- Taiwan
- Prior art keywords
- memory
- chalcogenide memory
- threshold
- switching material
- bottom electrode
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/948,891 US20050041467A1 (en) | 2003-06-18 | 2004-09-24 | Chalcogenide memory |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200611270A true TW200611270A (en) | 2006-04-01 |
TWI313863B TWI313863B (en) | 2009-08-21 |
Family
ID=36751613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94133048A TWI313863B (en) | 2004-09-24 | 2005-09-23 | Chalcogenide memory and operating method thereof |
Country Status (2)
Country | Link |
---|---|
CN (2) | CN1770494B (zh) |
TW (1) | TWI313863B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120130939A (ko) * | 2011-05-24 | 2012-12-04 | 에스케이하이닉스 주식회사 | 3차원 구조의 비휘발성 메모리 소자 및 그 제조 방법 |
CN107924699A (zh) * | 2015-04-24 | 2018-04-17 | 李武开 | 用于2d/3d阶层式nand的部分/完整阵列/块擦除 |
US10134470B2 (en) | 2015-11-04 | 2018-11-20 | Micron Technology, Inc. | Apparatuses and methods including memory and operation of same |
US9978810B2 (en) * | 2015-11-04 | 2018-05-22 | Micron Technology, Inc. | Three-dimensional memory apparatuses and methods of use |
KR102410947B1 (ko) * | 2015-11-20 | 2022-06-22 | 에스케이하이닉스 주식회사 | 문턱 스위칭 장치 및 이를 포함하는 전자 장치 |
CN105788632B (zh) * | 2016-02-26 | 2019-04-02 | 江苏时代全芯存储科技有限公司 | 记忆体电路 |
US10446226B2 (en) | 2016-08-08 | 2019-10-15 | Micron Technology, Inc. | Apparatuses including multi-level memory cells and methods of operation of same |
CN106898371B (zh) * | 2017-02-24 | 2020-08-28 | 中国科学院上海微系统与信息技术研究所 | 三维存储器读出电路及其字线与位线电压配置方法 |
CN107644664A (zh) * | 2017-09-27 | 2018-01-30 | 中国科学院上海微系统与信息技术研究所 | 三维垂直型存储器电路及位线与字线电压配置方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
-
2005
- 2005-09-23 CN CN 200510105365 patent/CN1770494B/zh active Active
- 2005-09-23 TW TW94133048A patent/TWI313863B/zh active
- 2005-09-23 CN CN 200910206679 patent/CN101702328B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN1770494A (zh) | 2006-05-10 |
CN101702328B (zh) | 2013-03-06 |
CN1770494B (zh) | 2010-05-05 |
CN101702328A (zh) | 2010-05-05 |
TWI313863B (en) | 2009-08-21 |
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