WO2004075197A3 - Mram-speicherzelle - Google Patents

Mram-speicherzelle Download PDF

Info

Publication number
WO2004075197A3
WO2004075197A3 PCT/EP2004/050207 EP2004050207W WO2004075197A3 WO 2004075197 A3 WO2004075197 A3 WO 2004075197A3 EP 2004050207 W EP2004050207 W EP 2004050207W WO 2004075197 A3 WO2004075197 A3 WO 2004075197A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory cell
mram memory
mram
separated
intermediate layer
Prior art date
Application number
PCT/EP2004/050207
Other languages
English (en)
French (fr)
Other versions
WO2004075197A2 (de
Inventor
Evangelos Stavrou
Manfred Proell
Stephan Schroeder
Joerg Kliewer
Original Assignee
Infineon Technologies Ag
Evangelos Stavrou
Manfred Proell
Stephan Schroeder
Joerg Kliewer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Evangelos Stavrou, Manfred Proell, Stephan Schroeder, Joerg Kliewer filed Critical Infineon Technologies Ag
Publication of WO2004075197A2 publication Critical patent/WO2004075197A2/de
Publication of WO2004075197A3 publication Critical patent/WO2004075197A3/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)

Abstract

Die Erfindung betrifft eine MRAM-Speicherzelle, bei der die durch eine Zwischenschicht (ZS) getrennten Magnetschichten (ML1, ML2) wenigstens teilweise aus einem ferrimagnetischen Material bestehen.
PCT/EP2004/050207 2003-01-14 2004-01-14 Mram-speicherzelle WO2004075197A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10301092A DE10301092B4 (de) 2003-01-14 2003-01-14 MRAM-Speicherzelle
DE10301092.0 2003-01-14

Publications (2)

Publication Number Publication Date
WO2004075197A2 WO2004075197A2 (de) 2004-09-02
WO2004075197A3 true WO2004075197A3 (de) 2005-03-03

Family

ID=32602521

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/050207 WO2004075197A2 (de) 2003-01-14 2004-01-14 Mram-speicherzelle

Country Status (3)

Country Link
DE (1) DE10301092B4 (de)
TW (1) TWI271737B (de)
WO (1) WO2004075197A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10301092B4 (de) * 2003-01-14 2006-06-29 Infineon Technologies Ag MRAM-Speicherzelle
DE102004042338B4 (de) * 2004-09-01 2006-09-07 Infineon Technologies Ag MRAM mit verbesserten Speicher- und Ausleseeigenschaften
EP2506265B1 (de) * 2011-03-28 2019-06-05 Crocus Technology Magnetische Zufallszugriff-Speicherzelle mit Doppelverbindung für ternäre inhaltsadressierbare Speicheranwendungen

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0783112A2 (de) * 1996-01-02 1997-07-09 Hewlett-Packard Company Ferrimagnetischer Magnetowiderstandsensor mit Tunneleffekt
EP0933782A2 (de) * 1998-01-28 1999-08-04 Canon Kabushiki Kaisha Magnetisches Dünnfilmelement, Speicherelement damit und Schreibe- und Leseverfahren mit einem solchen Speicherelement
EP1045403A2 (de) * 1999-04-16 2000-10-18 Canon Kabushiki Kaisha Magnetwiderstandselement
EP1115164A2 (de) * 2000-01-07 2001-07-11 Sharp Kabushiki Kaisha Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
US20020057594A1 (en) * 2000-11-01 2002-05-16 Tadahiko Hirai Magnetic memory and information recording and reproducing method therefor
US20020075722A1 (en) * 2000-11-09 2002-06-20 Alps Electric Co., Ltd. Thin-film magnetic element capable of effectively orienting magnetization direction of magnetic layer and manufacturing method thereof
EP1244118A2 (de) * 2001-03-19 2002-09-25 Canon Kabushiki Kaisha Magnetoresistives Element und Benützung für MRAM
US6480411B1 (en) * 1999-10-25 2002-11-12 Canon Kabushiki Kaisha Magnetoresistance effect type memory, and method and device for reproducing information from the memory
DE10128964A1 (de) * 2001-06-15 2002-12-19 Infineon Technologies Ag Digitale Speicherzelleneinrichtung
US6538919B1 (en) * 2000-11-08 2003-03-25 International Business Machines Corporation Magnetic tunnel junctions using ferrimagnetic materials
WO2003054886A2 (en) * 2001-12-20 2003-07-03 Koninklijke Philips Electronics N.V. Increased magnetic stability devices suitable for use as sub-micron memories
US6667897B1 (en) * 2002-06-28 2003-12-23 International Business Machines Corporation Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11161921A (ja) * 1997-12-01 1999-06-18 Nec Corp 磁気抵抗効果素子およびその製造方法
DE10113853B4 (de) * 2000-03-23 2009-08-06 Sharp K.K. Magnetspeicherelement und Magnetspeicher
US6603678B2 (en) * 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
US6430084B1 (en) * 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer
DE10301092B4 (de) * 2003-01-14 2006-06-29 Infineon Technologies Ag MRAM-Speicherzelle

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0783112A2 (de) * 1996-01-02 1997-07-09 Hewlett-Packard Company Ferrimagnetischer Magnetowiderstandsensor mit Tunneleffekt
EP0933782A2 (de) * 1998-01-28 1999-08-04 Canon Kabushiki Kaisha Magnetisches Dünnfilmelement, Speicherelement damit und Schreibe- und Leseverfahren mit einem solchen Speicherelement
EP1045403A2 (de) * 1999-04-16 2000-10-18 Canon Kabushiki Kaisha Magnetwiderstandselement
US6480411B1 (en) * 1999-10-25 2002-11-12 Canon Kabushiki Kaisha Magnetoresistance effect type memory, and method and device for reproducing information from the memory
EP1115164A2 (de) * 2000-01-07 2001-07-11 Sharp Kabushiki Kaisha Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement
US20020057594A1 (en) * 2000-11-01 2002-05-16 Tadahiko Hirai Magnetic memory and information recording and reproducing method therefor
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
US6538919B1 (en) * 2000-11-08 2003-03-25 International Business Machines Corporation Magnetic tunnel junctions using ferrimagnetic materials
US20020075722A1 (en) * 2000-11-09 2002-06-20 Alps Electric Co., Ltd. Thin-film magnetic element capable of effectively orienting magnetization direction of magnetic layer and manufacturing method thereof
EP1244118A2 (de) * 2001-03-19 2002-09-25 Canon Kabushiki Kaisha Magnetoresistives Element und Benützung für MRAM
DE10128964A1 (de) * 2001-06-15 2002-12-19 Infineon Technologies Ag Digitale Speicherzelleneinrichtung
WO2003054886A2 (en) * 2001-12-20 2003-07-03 Koninklijke Philips Electronics N.V. Increased magnetic stability devices suitable for use as sub-micron memories
US6667897B1 (en) * 2002-06-28 2003-12-23 International Business Machines Corporation Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
CAMLEY R E: "Properties of magnetic superlattices with antiferromagnetic interfacial coupling: magnetization, susceptibility, and compensation points", PHYS. REV. B, CONDENS. MATTER (USA), PHYSICAL REVIEW B (CONDENSED MATTER), 1 JUNE 1989, USA, vol. 39, no. 16, pt.B, 1 June 1989 (1989-06-01), pages 12316 - 12319, XP002286248, ISSN: 0163-1829 *
CHERIFI K ET AL: "MAGNETIC STRUCTURE OF GD/FE MULTILAYERS", 1 February 1992, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, PAGE(S) 1833-1834, ISSN: 0304-8853, XP000324564 *
FUJIMORI H ET AL: "New phenomena of magnetoresistance in ferrimagnetic Fe/Gd multilayers", J. APPL. PHYS. (USA), JOURNAL OF APPLIED PHYSICS, 1 MAY 1990, USA, vol. 67, no. 9, pt.2B, 1 May 1990 (1990-05-01), pages 5716 - 5718, XP002286247, ISSN: 0021-8979 *
HONDA S ET AL: "MEAN FIELD ANALYSIS OF THE MAGNETIZATION OF AMORPHOUS GD/TE MULTILAYERS", 1 November 1993, IEEE TRANSACTIONS ON MAGNETICS, IEEE INC. NEW YORK, US, PAGE(S) 3135-3137, ISSN: 0018-9464, XP000432410 *
KOON N C ET AL: "Magnetic properties of ferrimagnetic rare-earth-transition-metal films and multilayers", J ALLOYS COMPD; JOURNAL OF ALLOYS AND COMPOUNDS APR 3 1992, vol. 181, no. 1-2, 14 July 1991 (1991-07-14), pages 409 - 418, XP002294821 *

Also Published As

Publication number Publication date
TWI271737B (en) 2007-01-21
TW200425138A (en) 2004-11-16
DE10301092B4 (de) 2006-06-29
WO2004075197A2 (de) 2004-09-02
DE10301092A1 (de) 2004-07-29

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