TW200608411A - Memory device for reducing leakage current - Google Patents
Memory device for reducing leakage currentInfo
- Publication number
- TW200608411A TW200608411A TW094120774A TW94120774A TW200608411A TW 200608411 A TW200608411 A TW 200608411A TW 094120774 A TW094120774 A TW 094120774A TW 94120774 A TW94120774 A TW 94120774A TW 200608411 A TW200608411 A TW 200608411A
- Authority
- TW
- Taiwan
- Prior art keywords
- blocks
- memory device
- leakage current
- memory cell
- reducing leakage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
Landscapes
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040047266A KR100541687B1 (ko) | 2004-06-23 | 2004-06-23 | 누설전류 감소를 위한 메모리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200608411A true TW200608411A (en) | 2006-03-01 |
TWI290720B TWI290720B (en) | 2007-12-01 |
Family
ID=36166533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094120774A TWI290720B (en) | 2004-06-23 | 2005-06-22 | Memory device for reducing leakage current |
Country Status (4)
Country | Link |
---|---|
US (1) | US7193926B2 (zh) |
KR (1) | KR100541687B1 (zh) |
CN (1) | CN1747057A (zh) |
TW (1) | TWI290720B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101215641B1 (ko) * | 2006-12-26 | 2012-12-26 | 에스케이하이닉스 주식회사 | 반도체 장치의 전류저감회로 |
JP4364260B2 (ja) * | 2007-05-28 | 2009-11-11 | 株式会社東芝 | 半導体記憶装置 |
US7813209B2 (en) * | 2008-10-01 | 2010-10-12 | Nanya Technology Corp. | Method for reducing power consumption in a volatile memory and related device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528539A (en) * | 1994-09-29 | 1996-06-18 | Micron Semiconductor, Inc. | High speed global row redundancy system |
JP3223877B2 (ja) * | 1998-03-27 | 2001-10-29 | 日本電気株式会社 | 半導体記憶装置 |
JP3296319B2 (ja) * | 1999-03-02 | 2002-06-24 | 日本電気株式会社 | ワード線駆動回路及び半導体記憶装置 |
-
2004
- 2004-06-23 KR KR1020040047266A patent/KR100541687B1/ko not_active IP Right Cessation
-
2005
- 2005-06-22 US US11/158,492 patent/US7193926B2/en active Active
- 2005-06-22 TW TW094120774A patent/TWI290720B/zh not_active IP Right Cessation
- 2005-06-23 CN CNA2005100879005A patent/CN1747057A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN1747057A (zh) | 2006-03-15 |
TWI290720B (en) | 2007-12-01 |
US20050286335A1 (en) | 2005-12-29 |
KR100541687B1 (ko) | 2006-01-12 |
KR20050122106A (ko) | 2005-12-28 |
US7193926B2 (en) | 2007-03-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |