TW200608143A - Positive resist composition and method for forming resist pattern - Google Patents
Positive resist composition and method for forming resist patternInfo
- Publication number
- TW200608143A TW200608143A TW094121265A TW94121265A TW200608143A TW 200608143 A TW200608143 A TW 200608143A TW 094121265 A TW094121265 A TW 094121265A TW 94121265 A TW94121265 A TW 94121265A TW 200608143 A TW200608143 A TW 200608143A
- Authority
- TW
- Taiwan
- Prior art keywords
- constitutional unit
- resin component
- resist composition
- positive resist
- acid
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004195671A JP4198648B2 (ja) | 2004-07-01 | 2004-07-01 | ポジ型レジスト組成物及びレジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200608143A true TW200608143A (en) | 2006-03-01 |
TWI306991B TWI306991B (en) | 2009-03-01 |
Family
ID=35782630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94121265A TWI306991B (en) | 2004-07-01 | 2005-06-24 | Positive resist composition and method for forming resist pattern |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4198648B2 (zh) |
TW (1) | TWI306991B (zh) |
WO (1) | WO2006003819A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4937594B2 (ja) * | 2006-02-02 | 2012-05-23 | 東京応化工業株式会社 | 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法 |
JP5297775B2 (ja) * | 2008-11-28 | 2013-09-25 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
US8232040B2 (en) * | 2008-11-28 | 2012-07-31 | Tokyo Ohka Kogyo Co., Ltd. | Positive resist composition and method of forming resist pattern |
JP5297776B2 (ja) * | 2008-11-28 | 2013-09-25 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
JP5297774B2 (ja) * | 2008-11-28 | 2013-09-25 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
US8106645B2 (en) | 2009-04-13 | 2012-01-31 | Arcfl Technology Limited | Power saving system for household electric appliance |
JP2023020908A (ja) * | 2021-07-29 | 2023-02-09 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11109631A (ja) * | 1997-10-06 | 1999-04-23 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
US6537724B1 (en) * | 1999-11-02 | 2003-03-25 | Hyundai Electronics Industries Co., Ltd. | Photoresist composition for resist flow process, and process for forming contact hole using the same |
JP3755571B2 (ja) * | 1999-11-12 | 2006-03-15 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
JP4062655B2 (ja) * | 2000-08-21 | 2008-03-19 | 東京応化工業株式会社 | 架橋化ポジ型レジスト組成物 |
JP4144726B2 (ja) * | 2000-08-21 | 2008-09-03 | 東京応化工業株式会社 | 架橋形成ポジ型ホトレジスト組成物 |
JP4135346B2 (ja) * | 2001-01-19 | 2008-08-20 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP4239661B2 (ja) * | 2002-06-17 | 2009-03-18 | 住友化学株式会社 | 化学増幅型レジスト組成物 |
-
2004
- 2004-07-01 JP JP2004195671A patent/JP4198648B2/ja not_active Expired - Lifetime
-
2005
- 2005-06-21 WO PCT/JP2005/011379 patent/WO2006003819A1/ja active Application Filing
- 2005-06-24 TW TW94121265A patent/TWI306991B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2006003819A1 (ja) | 2006-01-12 |
TWI306991B (en) | 2009-03-01 |
JP2006018015A (ja) | 2006-01-19 |
JP4198648B2 (ja) | 2008-12-17 |
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