TW200607082A - Non-volatile memory cell and manufacturing method thereof - Google Patents

Non-volatile memory cell and manufacturing method thereof

Info

Publication number
TW200607082A
TW200607082A TW093124614A TW93124614A TW200607082A TW 200607082 A TW200607082 A TW 200607082A TW 093124614 A TW093124614 A TW 093124614A TW 93124614 A TW93124614 A TW 93124614A TW 200607082 A TW200607082 A TW 200607082A
Authority
TW
Taiwan
Prior art keywords
memory cell
volatile memory
manufacturing
substrate
region
Prior art date
Application number
TW093124614A
Other languages
Chinese (zh)
Other versions
TWI239099B (en
Inventor
Jung-Ching Chen
Chuang-Hsin Chueh
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW93124614A priority Critical patent/TWI239099B/en
Application granted granted Critical
Publication of TWI239099B publication Critical patent/TWI239099B/en
Publication of TW200607082A publication Critical patent/TW200607082A/en

Links

Abstract

A non-volatile memory cell and a manufacturing method thereof are provided. The non-volatile memory cell includes a substrate, a first isolation structure positioned in a first region on the substrate, a second isolation structure surrounding a second region on the substrate, a control gate positioned on the first isolation structure in the first region, a first insulating layer positioned on the control gate, a second insulating layer positioned on the portion of the substrate in the second region, and a floating gate positioned on the first insulating layer and the second insulating layer.
TW93124614A 2004-08-13 2004-08-13 Non-volatile memory cell and manufacturing method thereof TWI239099B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93124614A TWI239099B (en) 2004-08-13 2004-08-13 Non-volatile memory cell and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93124614A TWI239099B (en) 2004-08-13 2004-08-13 Non-volatile memory cell and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TWI239099B TWI239099B (en) 2005-09-01
TW200607082A true TW200607082A (en) 2006-02-16

Family

ID=37001191

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93124614A TWI239099B (en) 2004-08-13 2004-08-13 Non-volatile memory cell and manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI239099B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447861B (en) * 2011-04-20 2014-08-01 Macronix Int Co Ltd Semiconductor device and manufacturing method for the same
TWI725891B (en) * 2020-07-09 2021-04-21 力晶積成電子製造股份有限公司 Semiconductor device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447861B (en) * 2011-04-20 2014-08-01 Macronix Int Co Ltd Semiconductor device and manufacturing method for the same
TWI725891B (en) * 2020-07-09 2021-04-21 力晶積成電子製造股份有限公司 Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
TWI239099B (en) 2005-09-01

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