TW200419782A - Flash memory cell, manufacturing method of memory cell and operation method thereof - Google Patents
Flash memory cell, manufacturing method of memory cell and operation method thereofInfo
- Publication number
- TW200419782A TW200419782A TW92106129A TW92106129A TW200419782A TW 200419782 A TW200419782 A TW 200419782A TW 92106129 A TW92106129 A TW 92106129A TW 92106129 A TW92106129 A TW 92106129A TW 200419782 A TW200419782 A TW 200419782A
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- memory cell
- selecting
- substrate
- dielectric layer
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
A memory cell is consisted of a substrate, gate structure, source region, erasing gate, erasing gate dielectric layer, selecting gate, selecting gate dielectric layer and drain region. The gate structure comprised a tunneling oxide, a floating gate, an inter-gate dielectric layer, control gate and the spacer is set on the substrate. The source region is set in the substrate at one side of the gate structure. The erasing gate is set on the source region at one side of the gate structure. The erasing gate dielectric layer is set between the erasing gate and source region. The selecting gate is set at the other side of gate structure. The selecting gate dielectric layer is set between the selecting gate and the substrate. The drain region is set in the substrate at one side of the selecting gate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92106129A TWI224858B (en) | 2003-03-20 | 2003-03-20 | Flash memory cell, manufacturing method of memory cell and operation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92106129A TWI224858B (en) | 2003-03-20 | 2003-03-20 | Flash memory cell, manufacturing method of memory cell and operation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200419782A true TW200419782A (en) | 2004-10-01 |
| TWI224858B TWI224858B (en) | 2004-12-01 |
Family
ID=34568321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92106129A TWI224858B (en) | 2003-03-20 | 2003-03-20 | Flash memory cell, manufacturing method of memory cell and operation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI224858B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633091A (en) * | 2015-01-13 | 2016-06-01 | 北京芯盈速腾电子科技有限责任公司 | Non-volatile memory unit and method for manufacturing the same |
| CN105931993A (en) * | 2015-05-04 | 2016-09-07 | 北京芯盈速腾电子科技有限责任公司 | Non-volatile Storage Unit And Manufacturing Method Thereof |
-
2003
- 2003-03-20 TW TW92106129A patent/TWI224858B/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633091A (en) * | 2015-01-13 | 2016-06-01 | 北京芯盈速腾电子科技有限责任公司 | Non-volatile memory unit and method for manufacturing the same |
| CN105931993A (en) * | 2015-05-04 | 2016-09-07 | 北京芯盈速腾电子科技有限责任公司 | Non-volatile Storage Unit And Manufacturing Method Thereof |
| TWI594378B (en) * | 2015-05-04 | 2017-08-01 | 北京芯盈速騰電子科技有限責任公司 | Non-volatile memory cell and manufacture method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI224858B (en) | 2004-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |