TW200713519A - Non-volatile memory and the fabricating method thereof - Google Patents
Non-volatile memory and the fabricating method thereofInfo
- Publication number
- TW200713519A TW200713519A TW094133514A TW94133514A TW200713519A TW 200713519 A TW200713519 A TW 200713519A TW 094133514 A TW094133514 A TW 094133514A TW 94133514 A TW94133514 A TW 94133514A TW 200713519 A TW200713519 A TW 200713519A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- volatile memory
- trench
- fabricating method
- doped region
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
A method of fabricating non-volatile memory is described. First, a substrate is provided. Next, a first doped region which is at a distance from the substrate is formed in the substrate. Then, a trench which the bottom of reveals the first doped region is formed in the substrate. Later on, a charge storage layer is formed on the both sides of the trench, and the top of the charge storage layer is lower than that of the substrate. Afterwards, a gate is formed in the trench. Then, a second doped region is formed in the top of the substrate on the both sides of the trench.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94133514A TWI281729B (en) | 2005-09-27 | 2005-09-27 | Non-volatile memory and the fabricating method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94133514A TWI281729B (en) | 2005-09-27 | 2005-09-27 | Non-volatile memory and the fabricating method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200713519A true TW200713519A (en) | 2007-04-01 |
TWI281729B TWI281729B (en) | 2007-05-21 |
Family
ID=38751637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94133514A TWI281729B (en) | 2005-09-27 | 2005-09-27 | Non-volatile memory and the fabricating method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI281729B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9385240B1 (en) | 2015-03-03 | 2016-07-05 | Macronix International Co., Ltd. | Memory device and method for fabricating the same |
TWI556412B (en) * | 2015-03-03 | 2016-11-01 | 旺宏電子股份有限公司 | Memory device and method for fabricating the same |
-
2005
- 2005-09-27 TW TW94133514A patent/TWI281729B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9385240B1 (en) | 2015-03-03 | 2016-07-05 | Macronix International Co., Ltd. | Memory device and method for fabricating the same |
TWI556412B (en) * | 2015-03-03 | 2016-11-01 | 旺宏電子股份有限公司 | Memory device and method for fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
TWI281729B (en) | 2007-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200633234A (en) | Non-volatile memory with asymmetrical doping profile | |
TW200719442A (en) | Low hydrogen concentration charge-trapping layer structures for non-volatile memory and methods of forming the same | |
SG124347A1 (en) | Method for forming high-k charge storage device | |
TW200721492A (en) | Non-volatile memory and manufacturing method and operation method thereof | |
TW200701440A (en) | Non-volatile memory and manufacturing method and operating method thereof | |
TWI256735B (en) | Transistor of semiconductor device and method of manufacturing the same | |
TWI265637B (en) | Method for manufacturing a multiple-gate charge trapping non-volatile memory | |
TW200741980A (en) | Semiconductor device having non-volatile memory and method of fabricating the same | |
TW200623210A (en) | Recess gate and method for fabricating semiconductor device with the same | |
WO2006060116A3 (en) | Multi-bit nanocrystal memory | |
WO2007034376A3 (en) | Memory device with a strained base layer and method of manufacturing such a memory device | |
TW200717782A (en) | Split gate flash memory cell and fabrication method thereof | |
TW200709395A (en) | Non-volatile memory and operatting method thereof | |
TW200625608A (en) | Non-volatile memory device and manufacturing method and operating method thereof | |
TW200620482A (en) | Memory cell with reduced DIBL and VSS resistance | |
TW200419783A (en) | Flash memory with selective gate within a substrate and method of fabricating the same | |
TW200713519A (en) | Non-volatile memory and the fabricating method thereof | |
TW200611400A (en) | Nonvolatile memory and manufacturing method and operating method thereof | |
TW200638515A (en) | Non-volatile memory and fabricating method thereof and operation thereof | |
TWI267200B (en) | Non-volatile memory structure and fabricating method thereof | |
TW200607080A (en) | Flash memory cell and fabricating method thereof | |
TW200644179A (en) | Non-volatile memory and fabricating method thereof | |
WO2009086433A3 (en) | Non-volatile memory cell with charge storage layer in u-shaped groove | |
TW200701439A (en) | Non-volatile memory and manufacturing method and operating method thereof | |
TWI256726B (en) | Non-volatile memory and fabricating method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |