TW200701439A - Non-volatile memory and manufacturing method and operating method thereof - Google Patents
Non-volatile memory and manufacturing method and operating method thereofInfo
- Publication number
- TW200701439A TW200701439A TW094121376A TW94121376A TW200701439A TW 200701439 A TW200701439 A TW 200701439A TW 094121376 A TW094121376 A TW 094121376A TW 94121376 A TW94121376 A TW 94121376A TW 200701439 A TW200701439 A TW 200701439A
- Authority
- TW
- Taiwan
- Prior art keywords
- plural
- substrate
- trenches
- volatile memory
- gates
- Prior art date
Links
Abstract
A non-volatile memory includes a substrate, plural select gates, plural gate dielectric layers, plural doped regions, plural control gates, and plural charge storage structure. There are plural trenches in the substrate, these trenches are aligned in parallel and extend in a first direction. Plural select gates are located in the substrate and fill these trenches. Plural gate dielectric layers are located between the select gates and the substrate. Plural doped regions are located in the substrate below the trenches. Plural control gates are located above the select gates and aligned in parallel and extend in a second direction. The second direction is across to the first direction. Plural charge storage structures are respectively located between the control gates and the substrate that is among the trenches.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94121376A TWI271855B (en) | 2005-06-27 | 2005-06-27 | Non-volatile memory and manufacturing method and operating method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94121376A TWI271855B (en) | 2005-06-27 | 2005-06-27 | Non-volatile memory and manufacturing method and operating method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200701439A true TW200701439A (en) | 2007-01-01 |
TWI271855B TWI271855B (en) | 2007-01-21 |
Family
ID=38435337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94121376A TWI271855B (en) | 2005-06-27 | 2005-06-27 | Non-volatile memory and manufacturing method and operating method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI271855B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7939451B2 (en) | 2007-06-07 | 2011-05-10 | Macronix International Co., Ltd. | Method for fabricating a pattern |
CN105762150A (en) * | 2014-12-03 | 2016-07-13 | 力晶科技股份有限公司 | Flash memory and manufacturing method thereof |
-
2005
- 2005-06-27 TW TW94121376A patent/TWI271855B/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7939451B2 (en) | 2007-06-07 | 2011-05-10 | Macronix International Co., Ltd. | Method for fabricating a pattern |
CN105762150A (en) * | 2014-12-03 | 2016-07-13 | 力晶科技股份有限公司 | Flash memory and manufacturing method thereof |
CN105762150B (en) * | 2014-12-03 | 2018-09-11 | 力晶科技股份有限公司 | Flash memory and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI271855B (en) | 2007-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200633234A (en) | Non-volatile memory with asymmetrical doping profile | |
TW200701440A (en) | Non-volatile memory and manufacturing method and operating method thereof | |
TWI263342B (en) | Non-volatile memory and manufacturing method and operating method thereof | |
TW200627631A (en) | Non-volatile memory and manufacturing method and operating method thereof | |
TW200713520A (en) | Non-volatile memory and fabricating method thereof | |
TWI256130B (en) | Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions | |
TW200605273A (en) | Nonvolatile memory and manufacturing method thereof | |
EP2048709A3 (en) | Non-volatile memory device, method of operating the same, and method of fabricating the same | |
TW200721492A (en) | Non-volatile memory and manufacturing method and operation method thereof | |
TWI349370B (en) | An isolation-less, contact-less array of nonvolatile memory cells each having a floating gate for storage of charges, and methods of manufacturing, and operating therefor | |
TW200625551A (en) | Method of fabricating non-volatile memory | |
WO2008045589A3 (en) | Dual-gate device and method | |
TW200719440A (en) | Non-volatile memory and manufacturing method and operating method thereof | |
TW200717722A (en) | Non-volatile memory and manufacturing method and operating method thereof | |
TW200723543A (en) | Non-volatile memory and manufacturing method and operating method thereof | |
DE60231083D1 (en) | Spacer technique for a read only memory transistor with select gate on one side of a control gate floating gate stack | |
TW200701439A (en) | Non-volatile memory and manufacturing method and operating method thereof | |
TW200419783A (en) | Flash memory with selective gate within a substrate and method of fabricating the same | |
TW200719439A (en) | Non-volatile memory and manufacturing method and operating method thereof | |
TWI267200B (en) | Non-volatile memory structure and fabricating method thereof | |
TW200638515A (en) | Non-volatile memory and fabricating method thereof and operation thereof | |
TW200625552A (en) | 2-transistor memory cell with modified access gate | |
TW200633140A (en) | Method of fabricating a non-volatile memory | |
TW200644179A (en) | Non-volatile memory and fabricating method thereof | |
TW200633230A (en) | Non-volatile memory and manufacturing method and operating method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |