TWI256726B - Non-volatile memory and fabricating method thereof - Google Patents
Non-volatile memory and fabricating method thereofInfo
- Publication number
- TWI256726B TWI256726B TW94107440A TW94107440A TWI256726B TW I256726 B TWI256726 B TW I256726B TW 94107440 A TW94107440 A TW 94107440A TW 94107440 A TW94107440 A TW 94107440A TW I256726 B TWI256726 B TW I256726B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- charge trapping
- metal gate
- substrate
- volatile memory
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
A non-volatile memory which is constituted of a substrate, a metal gate layer, a source region and a drain region, a tunneling dielectric layer, a charge trapping layer, a blocking dielectric layer and a channel region is provided. The metal gate layer is formed on the substrate. The source region and the drain region are located in the substrate on both sides of the metal gate layer. The tunneling dielectric layer is located between the metal gate layer and the substrate. The charge trapping layer is located between the tunneling dielectric layer and the metal gate layer. The charge trapping layer is constituted of a plurality of charge trapping blocks which are divided from a trench. The blocking dielectric layer is located between the charge trapping layer and the metal gate layer, and it fills the trench in the charge trapping layer. The channel region is located in the substrate between the source region and the drain region under the charge trapping layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94107440A TWI256726B (en) | 2005-03-11 | 2005-03-11 | Non-volatile memory and fabricating method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94107440A TWI256726B (en) | 2005-03-11 | 2005-03-11 | Non-volatile memory and fabricating method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI256726B true TWI256726B (en) | 2006-06-11 |
| TW200633191A TW200633191A (en) | 2006-09-16 |
Family
ID=37614762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94107440A TWI256726B (en) | 2005-03-11 | 2005-03-11 | Non-volatile memory and fabricating method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI256726B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI469361B (en) * | 2011-04-08 | 2015-01-11 | Macronix Int Co Ltd | Semiconductor device and method of fabricating the same |
-
2005
- 2005-03-11 TW TW94107440A patent/TWI256726B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TW200633191A (en) | 2006-09-16 |
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