TW200540457A

TW200540457A - Two-dimensional light modulation device, exposure apparatus, and exposure method

Info

Publication number: TW200540457A
Application number: TW094105704A
Authority: TW
Inventors: Naomasa Shiraishi
Original assignee: Nikon Corp
Priority date: 2004-02-25
Filing date: 2005-02-25
Publication date: 2005-12-16
Also published as: WO2005081034A1; JPWO2005081034A1

Abstract

The present invention discloses a scanning-type maskless exposure apparatus having, as a variable forming mask, a two-dimensional light modulation device capable of moving a formed modulated light distribution in one direction at a high speed. A two-dimensional light modulation device is used as a variable forming mask of a scanning-type maskless exposure apparatus. The light modulation device has a light modulation element array where light modulation elements each composed of a signal holding element and a light modulation element are two dimensionally arranged and has a control circuit mechanism capable of sequentially sending a light modulation signal, held by a signal holding element, in one direction to an adjacent signal holding element. A light modulation state distribution, as a pattern on the variable forming mask, capable of being sent in one direction is transferred, through a projection optical system, on a moving substrate to be exposed.

Description

200540457 鳓九、發明說明：【發明所屬之技術領域】本么明似關於用來製造例如半導體積體電路（LSI等）、攝影兀件、或液晶顯示器等各種元件之微影製程所使用之才又〜光技術，详言之，係關於不使用繪有固定圖案之光罩而k使用卩變形成光罩來進行曝光之所謂的無光罩曝一 1 又本务明係有關使用該曝光技術之元件製造技術。200540457 鳓 IX. Description of the invention: [Technical field to which the invention belongs] Benmeming seems to be used in the lithography process for manufacturing various components such as semiconductor integrated circuits (LSIs), photographic elements, or liquid crystal displays. Light technology, in detail, is about the so-called maskless exposure that does not use a photomask with a fixed pattern and uses a mask to form a mask to perform exposure. 1 It is also related to the use of this exposure technology. Component manufacturing technology.

【先前技術】當形成構成半導體積體電路或液晶顯示器等電子元件之U細圖案之際，係使用將依比例放大4〜5倍左右之待形成圖案描畫在透過性玻璃基板上的光罩（亦稱標線片或簡稱光罩），藉投影光學系統將光罩上原版圖案縮小曝光轉印至作為被曝光基板之晶圓（或玻璃板等）上之感光膜（光阻）的方法。並且，在該曝光轉印之際，使用步進器等靜止曝光型及掃描步進器等掃描曝光型之投影曝光裝置。對光罩之上述原版圖案之描繪，係根據圖案之設計資料，以電子束描晝裝置或雷射描晝裝置來進行。由於半導體積體電路等之微細化，光罩上原版圖案之大小亦隨之微、、’田化，且待描畫之圖案量亦增大。其結果，對光罩原版圖案之描晝及描晝後之圖案檢查所需時間增長，光罩之製造成本增加。因此，亦有不使用在玻璃基板上固定形成圖案之光罩， 6 200540457 而使用根據圖案設計資料，能將其透射率或反射率設定為可變之「可變形成光罩」，來對晶圓等進行曝光之所謂的「無光罩曝光裝置」、「無光罩曝光方法」之提案（例如：參照專利文獻1、專利文獻2、非專利文獻1、及非專利文獻2)。 / [專利文獻丨]美國專利公開第2003/ 008 1303A1號說 .· 明書 [專利文獻2]美國專利公開第2003/ 0202233A1號說 # 明書 [非專利文獻 1] T.Sandstrome 及其他：‘‘Sigma7100，a new architecture for laser pattern generators for 130nm and beyond”，SPIE(美國）Vol.4409，PP270-276(2001 年） [非專利文獻 2] J.Luberek 及其他；“c〇ntr〇inng CD variations in a massively parallel pattern generator^ SPIE(美國）V〇1.4691，PP671-678(2002 年）使用上述可變形成光罩之曝光裝置（無光罩曝光裝 *置），係假想使用可變角度之微小反射鏡要件二維排列之多重反射叙元件荨的二維調光元件，來作為可變形成光罩。在將可變形成光罩作為原版進行投影曝光時，一般而言，能可變形成在可變形成光罩上之圖案換算在被曝光基板上之面積越大，其產能（處理能力）越高。但是，上述圖案面積之增大，必須增加多重反射鏡元件上微小反射鏡要件之構成數，且為了驅動大量之微小反射鏡，必須將大量之驅動訊號（對應圖案形狀之調光訊號 7 200540457 咼速供應至多重反射鏡元件。口此η周光5fL 5虎之傳達需要長時間，此點將導致產能降低、或其訊號處理系統大規模化且高價格化，進而造成使用可變形成光罩之曝光装置之成本上昇。 / 【發明内容】 •本發明有鑑於此問題，其第1目㈣在使用具備多數反射鏡要件等之可轡报$ & $ >胃，号< j又形成先罩之曝光裝置中，亦能大幅削矚減職，反射鏡要件等所需之驅動訊號，來達成反射鏡要件等之间速驅動，且謀求訊號傳達系統之簡化，以低成本提供高產能之無光罩曝光裝置及無光罩曝光方法。又本务明之另一目的係提供一種非常適合用於該無光罩曝光裝置及無光罩曝光方法的二維調光元件。又本t明之再一目的係提供一種使用上述曝光.技術，能製造高性能元件的元件製造技術。 Φ 士為解决上述問題，本發明之二維調光元件（VM 1 )，其 t U在方、具有·調光元件陣列（1丨），係調光元件（MU)二維排列而成者，兮^ _ ^為先TL件係由保持調光訊號的訊號保持要件（BD)、與根據該調光訊號將戶斤照射之光束加以調光的 :周光要件（49)所構成；訊號轉送機構（xCH系將保持於該、;光元件（MU)中之訊號保持要件（BD)之調光訊號，依序轉、至〜第1方向相鄰之該調光元件（MU)中之訊號保持要件 ()’以及或就供應機構（LC，RC)，係將該調光訊號供應排歹U…亥第1方向之至少一端之該調光元件（mu)中之訊 8 200540457 號保持要件（BD)。因此，本贫 wwu)，能藉由訊號轉送機構（XC)，將保持於調光元件_)中之訊號保持要件⑽、的該調光訊號依序轉送至沿帛i方向相鄰之調光元件(_ 中之訊號保持要件（BD)。據此，能將對射入該調光元件之該照射光（射入光）的調光狀態，依序轉送至沿該第1方向相鄰之調光元件（49)。因此，旎使形成於該二維排列之調光要件（49)之各碉光狀態之分布，在大致保持其形狀的狀態下沿該第丨方向移動。且此各調光狀態之分布沿該第丨方向移動之際，該訊號供應機構（LC，RC)，僅需將該調光訊號供應至該二維排列之該調光元件（MU)中、排列於該第！方向一端之該調光元件（MU)中的訊號保持元件（BD)即可。據此，在上述移動時，與對各調光元件中之所有訊號保持元件BD供應調光訊號之情形相較，能大幅縮短調光訊號之供應量及供應所需時間，縮短處理時間。又’本發明之二維調光元件（VM1)，例如，構成該調光元件陣列之該調光元件之該二維排列，可排列在由與該第1方向平行之座標軸及與該第丨方向垂直之座標軸所定之正交座標系統上之正方格子的格子點上。又’本發明之二維調光元件之該訊號轉送機構xc , 例如，可包含電荷耦合元件。又 5玄況號供應機構（LC，RC) ’例如，可包含電荷岸馬合元件。據此，能簡化該訊號供應機構之構成。 9 200540457 本發明之二維調光元件，該訊號轉送機構x c與該調光元件陣列11 ’可以是層積構造。藉此，能將二維調光元件小型化，且能應用現有之半導體積體電路等製造技術等，廉價地製造二維調光元件。本發明之二維調光元件對該調光要件之該調光，係變更該調光要件之振幅透射率。又，本發明之二維調光元件之該調光元件（49)，例如，可包含反射鏡（1 〇a) ’該調光係將所照射之光束反射至既定方向之效率的變更。此外，例如，該效率之變更，係藉由變更該反射鏡反射面之傾斜角來進行。又例如，該調光係使該反射鏡所反射之反射光之相位變化。本發明之第1曝光裝置，係用來將所欲圖案曝光於被曝光基板（W)上，其特徵在於，具備··本發明之二維調光元件（VM 1 )，形狀訊號處理系統（2 1 )，係將該調光訊號供應至該二維調光元件；照明光學系統（2, 3, 4a，6, 7, 8)，係將來自光源（1)之照明光（IL0)照射至該二維調光元件；投影光學系統（13)，係將被該二維調光元件所調光之照明光導引至該被曝光基板上；以及基板載台（14),係保持該曝光基板，能在該第1方向（本發明之二維調光元件（VM1))被投影光學系統投影至該被曝光基板上之方向的第2方向進行掃描。〜亦即，本發明之第1曝光裝置，可以是將根據各調光狀恶（形成於構成該二維調光元件之二維排列的各調光要件㈣之圖案’在一邊將該被曝光基板（w)掃描於該第2方 200540457 向之同時、—、真上、，θ 將护成於，曝光的掃描型曝光褒置。並且，一邊將形成方；该二維排列 #光美板先要件之各調光狀態，與該被曝尤暴扳之知描同步，曝光。向予以掃描，一邊進行月之第1曝光裝置，由於元件（VM1)，故能將m 不知月之-、准，周先調先# '成μ —維調光元件之二維排列的各[Prior art] When forming U fine patterns that constitute electronic components such as semiconductor integrated circuits or liquid crystal displays, a photomask (on a transparent glass substrate) with a pattern to be formed enlarged by about 4 to 5 times is used ( Also known as reticle or photomask), a method of reducing and exposing the original pattern on the photomask to a photosensitive film (photoresist) on a wafer (or glass plate, etc.) as an exposed substrate by a projection optical system. For this exposure transfer, a stationary exposure type such as a stepper and a scanning exposure type projection exposure device such as a scanning stepper are used. The drawing of the original pattern of the photomask is performed by an electron beam scanning device or a laser scanning device according to the design data of the pattern. Due to the miniaturization of the semiconducting volume circuit, the size of the original pattern on the reticle is also slightly smaller, and the field size is increased, and the amount of pattern to be drawn is also increased. As a result, the time required to trace the original mask pattern and the pattern inspection after the day increase, and the manufacturing cost of the mask increases. Therefore, there is also a mask that does not use a fixed pattern on a glass substrate. 6 200540457 Use a "variable mask" that can set its transmittance or reflectance to be variable based on pattern design data. Proposals for so-called "maskless exposure devices" and "maskless exposure methods" for exposing circles and the like (for example, refer to Patent Document 1, Patent Document 2, Non-Patent Document 1, and Non-Patent Document 2). / [Patent Literature 丨] U.S. Patent Publication No. 2003/008 1303A1 said. · Clear [Patent Literature 2] U.S. Patent Publication No. 2003 / 0202233A1 No. # 明书 [Non-Patent Literature 1] T. Sandstrome and others: ' 'Sigma7100, a new architecture for laser pattern generators for 130nm and beyond ", SPIE (US) Vol. 4409, PP270-276 (2001) [Non-Patent Document 2] J. Luberek and others;" c〇ntr〇inng CD variations in a massively parallel pattern generator ^ SPIE (USA) V〇1.4691, PP671-678 (2002) The above-mentioned variable mask-forming exposure device (maskless exposure device *) is supposed to use a variable angle The micro-reflector requires two-dimensionally arranged two-dimensional dimming elements with multiple reflection elements as a variable mask. When the variable-formation mask is used as the original for projection exposure, in general, the larger the area of the pattern that can be variably formed on the variable-formation mask is converted on the exposed substrate, the higher its capacity (processing capacity). . However, the increase in the area of the above pattern requires an increase in the number of micro-mirror elements on the multi-mirror element, and in order to drive a large number of micro-mirrors, a large number of driving signals must be used (a dimming signal corresponding to the shape of the pattern 7 200540457 咼Quickly supply to multiple mirror elements. It takes a long time for the transmission of η Zhouguang 5fL 5 Tiger, which will lead to a reduction in production capacity, or a large-scale and high-priced signal processing system, which will lead to the use of a variable mask. The cost of the exposure device rises. / [Summary of the Invention] • In view of this problem, the first aspect of the present invention is to report the use of a mirror with many mirror elements, etc. $ & $ > The first exposure device can also greatly reduce the driving signals required for job reduction, mirror elements, etc., to achieve speed driving between mirror elements, etc., and seek to simplify the signal transmission system and provide high productivity at low cost. A maskless exposure device and a maskless exposure method. Another object of the present invention is to provide a maskless exposure device and a maskless exposure which are very suitable for the maskless exposure device and the maskless exposure method. Method for two-dimensional dimming elements. Yet another object of the present invention is to provide a device manufacturing technology capable of manufacturing high-performance elements using the above-mentioned exposure technology. Φ To solve the above problems, the two-dimensional dimming element of the present invention ( VM 1), where t U is in the square, and has a dimming element array (1 丨), which is a two-dimensional array of dimming elements (MU). Xi ^ _ ^ is the first TL element that maintains the dimming signal. Signal maintenance requirements (BD), and the light beam irradiated by households according to the dimming signal: Dimming by Zhou Guang requirements (49); signal transmission mechanism (xCH system will be maintained at this, light elements (MU) The dimmer signal of the signal maintenance requirement (BD) in the sequence, turn in order to ~ 1st direction adjacent to the signal maintenance requirements () in the dimmer element (MU) and the supply organization (LC, RC) It is the maintenance element (2005) No. 8 200540457 in the dimming element (mu) on at least one end of the dimming signal supply line U ... in the 1st direction. Therefore, the signal can be obtained by the signal The transfer mechanism (XC) keeps the dimming signal in the dimming element _). Sequentially transferred to the dimming elements (_ signal holding requirements (BD) adjacent in the 帛 i direction.) According to this, the dimming state of the irradiation light (incident light) incident on the dimming element can be changed. , Which are sequentially transferred to the dimming elements (49) adjacent to the first direction. Therefore, the distribution of the dimming states of the dimming elements (49) formed in the two-dimensional array is caused to maintain its shape substantially. The signal supply mechanism (LC, RC) only needs to supply the dimming signal to the two-dimensional array when the distribution of the dimming states moves along the first direction. Among the dimming elements (MU), the signal holding element (BD) arranged in the dimming element (MU) at one end in the! Direction may be sufficient. According to this, compared with the case where the dimming signals are supplied to all the signal holding elements BD in each dimming element during the above-mentioned movement, the supply amount of the dimming signal and the time required for the supply can be greatly shortened, and the processing time can be shortened. Also, the two-dimensional dimming element (VM1) of the present invention, for example, the two-dimensional arrangement of the dimming elements constituting the dimming element array may be arranged on a coordinate axis parallel to the first direction and the first axis At the grid points of the square grid on the orthogonal coordinate system defined by the vertical coordinate axis. The signal transfer mechanism xc of the two-dimensional dimming element of the present invention may include, for example, a charge-coupled element. Also, the 5th phase supply mechanism (LC, RC) ′, for example, may include a charge shore coupling device. Accordingly, the structure of the signal supply mechanism can be simplified. 9 200540457 The two-dimensional dimming element of the present invention, the signal transfer mechanism x c and the dimming element array 11 ′ may have a laminated structure. Thereby, the two-dimensional dimming element can be miniaturized, and the existing manufacturing technology such as a semiconductor integrated circuit can be applied to manufacture the two-dimensional dimming element at low cost. The dimming of the two-dimensional dimming element by the dimming element of the present invention changes the amplitude transmittance of the dimming element. In addition, the dimming element (49) of the two-dimensional dimming element of the present invention may include, for example, a reflecting mirror (10a). The dimming is a change in the efficiency of reflecting the irradiated light beam to a predetermined direction. In addition, for example, the efficiency is changed by changing the inclination angle of the reflecting surface of the mirror. As another example, the dimming system changes the phase of the reflected light reflected by the mirror. The first exposure device of the present invention is used for exposing a desired pattern on an exposed substrate (W), and is characterized by including the two-dimensional dimming element (VM 1) of the present invention and a shape signal processing system ( 2 1), which supplies the dimming signal to the two-dimensional dimming element; the illumination optical system (2, 3, 4a, 6, 7, 8) illuminates the illumination light (IL0) from the light source (1) To the two-dimensional dimming element; the projection optical system (13) guides the illumination light dimmed by the two-dimensional dimming element onto the exposed substrate; and the substrate stage (14) holds the The exposed substrate can be scanned in the second direction of the first direction (the two-dimensional dimming element (VM1) of the present invention) projected by the projection optical system onto the exposed substrate. ~ That is, the first exposure device of the present invention may expose the light to be exposed on one side according to the dimming patterns (patterns of the dimming elements ㈣ formed in the two-dimensional arrangement of the two-dimensional dimming element). The substrate (w) is scanned at the same time as the second party 200540457, —, true ,, θ will be preserved in the scan-type exposure setup for exposure. And, one side will be formed; the two-dimensional array # 光美板The various dimming conditions of the first requirements are synchronized with the exposure and exposure. The scan is performed while the first exposure device of the month is performed. Because of the element (VM1), m can not know the moon's-, accurate ，周先调先 # '成 μ —Each of a two-dimensional array of two-dimensional dimming elements

:該第1方：，調光狀態分布，在保持其形狀的狀態下方^ H並且’在此各調光狀態分布沿該第1 僅⑼至0際’該訊號供應機構（LC，Rc)，將該調光訊號 2應至紅維排狀該調光元件（MU)中、㈣於該第i 方向一端之該調光元件（肺）中之訊號保持要件⑽）。據=，在掃描曝光時，與對各調光元件中之所有訊號保持元件供應調光訊號之情形相較，能大幅縮短待供應之，先訊號的供應量及供應所需時間。其結果，能提高沿該弟1方向之移動速度，進而縮短該基板曝光所需之處理時間，以低成本實現高產能之無光罩曝光裝置。本舍明之第2曝光裝置，係用來將所欲圖案曝光於被曝光基板(W)上，其特徵在於，具備：具備反射鏡⑽)之本發明的二維調光元件（VM1);形狀訊號處理系統⑺），係將該調光訊號供應至該二維調光元件；照明光學系統等），係將來自光源（1)之照明光（IL〇)照射至該二維調光元件，投影光學系統（〗3)，係將被該二維調光元件所調光之照明光（IL6)導引至該被曝光基板上；以及基板載台（〗4)，係保持該被曝光基板，能在本發明二维調光元件（VMU之 11 200540457 ^ 該第1方向被該投影光學系統投影至該被曝光基板上之方向的第2方向進行掃描；且該照明光學系統，係將該职明光全體相對該投影光學系統之光軸（AX)傾斜既定角度，來照射於該二維調光元件。本發明之第2曝光裝置，藉由使用本發明之二維調光元件’亦能與本發明之第丨曝光裝置同樣的，使形成於該二維調光元件上之調光狀態分布，沿第1方向高速移動，而縮短該基板曝光所需之處理時間，以低成本實現高產能籲之無光罩曝光裝置。又本务明之苐2曝光裝置，由於係將對二維調光元件（VM1)之照明光（IL5)全體相對該投影光學系統（13)之光軸（AX)傾斜，因此能容易的將該照明光（IL5)、與被二維調光元件調光後之反射光（IL6)加以分離，並簡化曝光裝置之構成削減曝光裝置之成本。此外’本發明之第1曝光裝置及第2曝光裝置之任一衣置中，能與該基板載台之該第2方向位置之變化同步，進订構成該二維調光元件之訊號轉送機構（xc)的該訊號轉送。又，在本發明之第1曝光裝置及第2曝光裝置之任一 T置（1)係脈衝發光型光源，且與該脈衝發光之發光同步，進仃構成該二維調光元件之訊號轉送機構的該訊號轉送。本‘明之第1曝光方法，係將照明光（IL2)照射於可變成形光罩(VM 1)’將被,亥可變成形光罩所調光之該照明光 12 200540457 (IL3)透過投影光學系統（13)照射於被曝光基板（w)，其特徵在於··係使用本發明之二維調光元件（VM1 )，來作為可變成形光罩；藉由將對應該所欲圖案之調光訊號保持在該調光元件陣列（1 1)中之該調光元件（MU)，據以在該調光元件陣列中形成相當於該所欲圖案之調光分布，且藉由該訊號轉送機構（XC) ’將保持於該調光元件（mu)中之訊號保持要件（BD)之遠调光訊號依序轉送至沿該第1方向相鄰之該凋光元件中之訊號保持要件（BD)，並將形成於該調光元件陣列（11)之該調光分布沿該第1方向移動；且一邊使該被曝光基板（W)沿該第1方向被投影光學系統（13)投影至該被曝光基板上之方向的第2方向，相對該投影光學系統移動，一邊進行曝光。據此’與在掃描曝光之際對各調光元件中所有之全體。凡5虎保持要件重新供應調光訊號之情形相較，能大幅縮短供應調光訊號所需時間，提高沿該第丨方向之移動速度，進而縮短該基板之曝光所需處理時間。其結果，能以低成本提供高產能之無光罩曝光方法及無光罩曝光裝置。本發明之第2曝光方法，係將照明光（IL5)照射於可變成形光罩（VMi)，將被該可變成形光罩所調光之該照明光 (VL6)透過投景多光學系統（13)照#於被曝光基板（w)，其特徵在於：係使用本發明之具有反射鏡（1〇a)的二維調光元件’來作為可變成形光罩。 …—並且，藉由將對應該所欲圖案之調光訊號保持在該調光兀件陣列⑴）中之該調光元件（則），據以在該調光元件 13 200540457 陣列中形成相當於該所欲圖案之調光分布，且藉由該訊號轉运機構（CX)，將保持於該調光元件（MU)中之訊號保持要件（BD)之該調光訊號依序轉送至沿該第i方向相鄰之該調光元件（MU)中之訊號保持要件（BD)，並將形成於該調光元件陣歹j (1 1)之该g周光分布沿該第1方向移動；—邊使該被暴光基板（W)沿该第1方向被投影光學系統投影至該被曝光基板上之方向的第2方向，相對該投影光學系統移動，一邊進行曝光；且將該照明光（IL5)對該二維調光元件 (VM1)之照射’使其全體相對該投影光學系統之光軸(Αχ) 傾斜既定角度來進行。據此，與在掃描曝光之際對各調光元件中所有訊號保持要件重新供應調光訊號之情形相較，能大幅縮短供應調光訊號所需時間，提高沿㈣1方向之移動速度，及縮短該基板之曝光所需處理時間。其結果，能以:低成本提供高產能之無光罩曝光方法及無光罩曝光裝置。: The first party: the dimming state distribution, under the state that maintains its shape, ^ H and 'the dimming state distributions here along the 1st to the 0th interval' the signal supply mechanism (LC, Rc), The dimming signal 2 should be in the red dimension row of the dimming element (MU), and the signal maintaining element (lung) in the dimming element (lung) at one end in the i-th direction is maintained). According to =, compared with the case where the dimming signal is supplied to all the signals in each dimming element during scanning exposure, it can greatly shorten the supply of the first signal to be supplied and the time required for the supply. As a result, the moving speed in the direction of the brother 1 can be increased, thereby reducing the processing time required for the substrate exposure, and realizing a maskless exposure device with high productivity at a low cost. The second exposure device of the present invention is used for exposing a desired pattern on an exposed substrate (W), and is characterized by comprising: a two-dimensional dimming element (VM1) of the present invention provided with a mirror ⑽); a shape The signal processing system i) is to supply the dimming signal to the two-dimensional dimming element; the illumination optical system, etc.) is to illuminate the illumination light (IL0) from the light source (1) to the two-dimensional dimming element, The projection optical system (〗 3) guides the illumination light (IL6) adjusted by the two-dimensional dimming element onto the exposed substrate; and the substrate stage (〗 4) holds the exposed substrate Can be scanned in the second direction of the two-dimensional dimming element of the present invention (VMU 11 200540457 ^ the first direction is projected by the projection optical system onto the exposed substrate; and the illumination optical system is the The entire Ming-Ying Guang is inclined at a predetermined angle with respect to the optical axis (AX) of the projection optical system to irradiate the two-dimensional dimming element. The second exposure device of the present invention can also be used by using the two-dimensional dimming element of the present invention. Similar to the exposure device of the present invention, the The dimming state distribution formed on the two-dimensional dimming element is moved at a high speed in the first direction, thereby shortening the processing time required for the substrate exposure, and achieving a high-capacity maskless exposure device at a low cost. The Mingzhi 2 exposure device tilts the entire illumination light (IL5) of the two-dimensional dimming element (VM1) relative to the optical axis (AX) of the projection optical system (13), so the illumination light ( IL5), separated from the reflected light (IL6) after being dimmed by the two-dimensional dimming element, simplifying the configuration of the exposure device, and reducing the cost of the exposure device. In addition, any of the first exposure device and the second exposure device of the present invention In a garment, the signal transfer of the signal transfer mechanism (xc) constituting the two-dimensional dimming element can be synchronized with the change in the position of the second direction of the substrate stage. In addition, in the first aspect of the present invention, Either the T set (1) of the exposure device and the second exposure device is a pulse light-emitting light source, and is synchronized with the light emission of the pulse light, and enters the signal transfer that constitutes the signal transfer mechanism of the two-dimensional dimming element. Mingzhi's first exposure method Illumination light (IL2) is irradiated to the variable molding mask (VM 1) 'and the illumination light 12 200540457 (IL3), which is dimmed by the variable molding mask, is irradiated through the projection optical system (13) to be exposed The substrate (w) is characterized in that the two-dimensional dimming element (VM1) of the present invention is used as a variable shape mask; the dimming signal corresponding to a desired pattern is maintained at the dimming element The dimming element (MU) in the array (1 1) forms a dimming distribution corresponding to the desired pattern in the dimming element array, and is maintained by the signal transfer mechanism (XC) ' The remote dimming signal of the signal holding element (BD) in the dimming element (mu) is sequentially transferred to the signal holding element (BD) in the dimming element adjacent to the first direction, and will be formed in the A direction in which the light control distribution of the light control element array (11) is moved along the first direction; and while the exposed substrate (W) is projected by the projection optical system (13) onto the exposed substrate along the first direction In the second direction, the light is moved relative to the projection optical system, and exposure is performed. Based on this, all of the dimming elements are scanned at the time of scanning exposure. Compared with the situation where the 5 tigers maintain the requirements for re-supplying the dimming signal, the time required to supply the dimming signal can be greatly shortened, the moving speed in the first direction can be increased, and the processing time required for the exposure of the substrate can be shortened. As a result, a maskless exposure method and a maskless exposure apparatus with high productivity can be provided at a low cost. According to the second exposure method of the present invention, the illumination light (IL5) is irradiated to the variable shape mask (VMi), and the illumination light (VL6) adjusted by the variable shape mask is transmitted through the projection multi-optical system (13) Photo #on the substrate to be exposed (w), which is characterized in that the two-dimensional dimming element with a reflecting mirror (10a) according to the present invention is used as a variable shaped photomask. … —And, by keeping the dimming signal corresponding to the desired pattern in the dimming element array (i), the dimming element (then), the equivalent of the dimming element 13 200540457 array is formed The dimming distribution of the desired pattern, and the signal diversion mechanism (CX) is used to sequentially transfer the dimming signals of the signal holding element (BD) held in the dimming element (MU) to the The signal holding element (BD) in the dimming element (MU) adjacent to the i-th direction moves the g-peripheral light distribution formed in the dimming element array 歹 j (1 1) along the first direction; -While exposing the exposed substrate (W) along the first direction to the second direction of the direction projected by the projection optical system onto the exposed substrate, and exposing it while moving relative to the projection optical system; and the illumination light ( IL5) The irradiation of the two-dimensional dimming element (VM1) is performed so that the entirety thereof is inclined at a predetermined angle with respect to the optical axis (Aχ) of the projection optical system. According to this, compared with the case where the dimming signals are re-supplied to all the signal maintaining elements in each dimming element during the scanning exposure, the time required for supplying the dimming signals can be greatly shortened, the moving speed in the direction of ㈣1, and the shortening Processing time required for exposure of the substrate. As a result, it is possible to provide a maskless exposure method and a maskless exposure apparatus with high productivity at a low cost.

"又，藉此’能容易的將對二維調光元件(vmi)之照明光（IL 5)與被_維調光元件含周朵你十g t 1干巧九後之反射光（IL6)加以分離，謀求曝光裝置之低成本誕供更為廉價之高性能的本發明之第1及第2 B異·ik — 1" Also, by this, 'the illumination light (IL 5) of the two-dimensional dimming element (vmi) and the reflected light (IL6 of Zhou Duo You gt 1 1 and 9) can be easily adjusted ) Separately, the first and second Biso · ik — 1 of the present invention, which seeks a lower cost of the exposure device and a more inexpensive and high performance

*先方法，能與該被曝光基板W 万；该第2方向之位置轡仆印置文化问步的進行該訊號轉送。據此，能在高精度的保捭一 μ 得调先分布（相當於該二維調光 ==該調光元件陣列11上所形成之該所欲圖案)與嶋先基板评(透過該投影光學系統13)之位置關係的同 14 200540457 時’進行曝光。又本發明之第1及第2曝光方法中，該照明光係從脈衝發光型之光源〗所產生之脈衝光，能與該脈衝光之發光同步進行該訊號轉送。藉此’能防止曝光至被曝光基板 W上之圖案像的劣化。本發明之元件製造方法，包含曝光製程，此製程係將如明光&射於可變成形光罩，並將被該可變成形光罩所調光之該照明光透過投影光學系統照射於待形成元件之被曝光基板。#由本發明之曝光裝置，能實現縮短處理時間之曝光方法。、、根據本發明，在所謂之無光罩曝光技術中，能大幅縮減為了將所欲圖案形成於可變成形光罩，而在可變成形光罩中’能大幅削減用來供應按照該圖案之調光訊間。因此，能大幅提高無光罩曝光方法及無光罩曝光裝置之處理能力(產能）’能實現生產性高之曝光裝置及曝光方法〇此外，藉由在微影步驟中使用本發明之曝光方法，能使用门4貝之光罩的情形下，卩高生產性製造半導體積體電路等元件，削減元件製造成本。【實施方式】 △以下，針對本發明之二維調光元件之第i實施形態，參知、苐1〜4圖加以說明。 15 200540457 維調光元件VM1之全體第1圖係顯示本實施形態之俯視圖。 Μ σ光％件VM1具有調光it件MU(由微小反射鏡 ^ 成）、、㈣非列之調光元件陣列1 1。各調光元件MU，糸㈣在，例如··被排列在圖中以正交之X軸與Y軸形成乂座^統上之正方袼子之袼子點上。此處，所謂正子係扣在x軸方向保持第1間隔以等間隔排列，在墙向保持第2間隔以等間隔來排列之袼子。又，上述第1間隔及第2間隔亦可相等。在控制電路機構12連接訊號線Sig，透過訊號線叫， ^未圖示之訊號處理裝置，供應待形成在二維調光元件 Ml上、作相光分布之基礎的形狀訊號（圖案形狀訊號）。 " 十對構成本發明二維調光元件VM1之控制電路機構12，使用第2圖加以說明。第2圖所不’控制電路機構1 2 ’係由訊號處理系統二、與由電荷耦合元件（以下簡稱「⑽」）所組成之訊號 …轉达機構120所構成。訊號保持轉送機構12〇係形成 :未圖示之半導體基板上，在其X方向之-側（左側）端具有將電荷轉送往Y方向之⑽的左γ⑽(LC)，在其χ 方向之+ W右側）端具有將電荷轉送往γ方向之CCD的右 YCCD(RC)’以及在該乂方向之中央部具有在γ方向並連複數個：電荷轉送往X方向之CCD的XCCD(XC)者。此寺左 YCCD(LC)、右 YCCD(RC)、及 xccd(xc)之構成與通常之3相CXD構心大差1。 16 200540457 左YCCD(LC) ’係由設在未圖示之半導體基板上的左 Y轉廷路徑DL，其上形成之第}相左γ轉送電極F1，F2, F3, F4, F5、第2相左Y轉送電極G1，G2, G3, G4, G5、第3相左Y轉运電極Hl，H2，H3，H4，H5，以及將訊號供應至上述第1相左Y轉达電極F1〜F5的γ轉送訊號線Q1、將訊唬供應至上述第2相左γ轉送電極G丨〜G5、的γ轉送訊號線Q2、將讯號供應至上述第3相左γ轉送電極H丨〜的Υ轉送訊號線Q3所構成。右YCCD(RC)，係由設在未圖示之半導體基板上的右 γ轉送路徑DR，其上形成之第i相右γ轉送電極】丨，J2, J4, J5、第2相右Y轉送電極Κ1，Κ2, Κ3, K4, K5、第3相右Υ轉迗電極Ll，L2, L3, L4, L5，以及將訊號供應至上述第1相右Υ轉送電極η〜J5的γ轉送訊號線Q4、將訊號供應至上述第2相右γ轉送電極K1〜K5的γ轉送訊號線 Q5、將訊號供應至上述第3相右γ轉送電極l 1〜Κ5的γ 轉送訊號線Q6所構成。 XCCD(XC)，係由設在未圖示之半導體基板上平行於 X方向之複數條X轉送路徑D35 D4，D5等，其上形成（與 Y方向平行）之第1相X轉送電極Al，A2，A3，A4，A5、第 2相X轉送電極B1，B2, B3, B4, B5、第3相X轉送電極ci, C2，C3，C4，C5，以及將訊號供應至上述第丨相χ轉送電極A1〜Α5的X轉送訊號線pa、將訊號供應至上述第2 相X轉送電極B1〜B5的X轉送訊號線PB、將訊號供應至上述第3相X轉送電極C1〜C5的X轉送訊號線Pc所 17 200540457 構成。左Y轉送路徑DL與X轉送路徑D3〜D5等、以及右 Y軺送路徑DR與X轉送路徑⑺〜⑴等，如第2圖所示，係彼此連接’保持在各轉送路徑中之電荷能相互移動。又，第2圖中，為了顯示X轉送路徑D3, D4, D5及右γ轉送路徑DR之形狀及位置關係，在以波線V1，V2所圍之區域，雖刪除X轉送電極C5等及右γ轉送電極L5等部分，但實際上，在以波線V1，V2包圍之區域内，當然亦應形成^ 該等電極。透過A號線Sig從外部供應至本發明之二維調光元件 VM1的形狀訊號，係輸入訊號處理系統121，在該處被轉換為調光訊號，透過訊號線S1或S2供應至設在訊號保持轉送機構1 20之X方向兩端部的左γ轉送路徑DL之輸入部D0L，或右Y轉送路徑dr之輸入部d〇R。與此調光訊號同步，訊號處理系統丨2 1產生3相之Y 時鐘訊號，將各相訊號分別供應至γ轉送訊號線Q丨，Q4、 γ轉送訊號線Q2，Q5、Y轉送訊號線Q3，Q6。又，訊號處理系統121亦產生3相之X時鐘訊號ρΑ，PB，pc，將各相訊號分別供應至X轉送訊號線PA，PB，PC。又’在調光元件陣列1 1 (本發明之二維調光元件VM1 之特徵）上形成之調光分佈的移動時，最好是能視該移動方向’透過说號線S1或S 2之一方’將調光訊號供應至兩輸入部DOL，D0R之一方。其詳細情形，予以後述。以下，就透過訊號線S1，將調光訊號供應至左CCI)(LC^ 18 200540457 之輸入部D0L的情形進行說明。藉由調光訊號之輸入，在於訊號之-例，形成負的第二/ D〇L，作為對應調光* The first method can communicate with the exposed substrate W million; the position of the second direction can be printed in a cultural step to perform the signal transfer. According to this, it is possible to obtain a dimming distribution (equivalent to the two-dimensional dimming == the desired pattern formed on the dimming element array 11) with high accuracy and maintain a μ and to evaluate the dimming substrate (through the projection). The positional relationship of the optical system 13) is the same as at 14 200540457 '. In the first and second exposure methods of the present invention, the illumination light is pulsed light generated from a pulsed light source, and the signal can be transferred in synchronization with the pulsed light. Thereby, the deterioration of the pattern image exposed on the substrate W to be exposed can be prevented. The device manufacturing method of the present invention includes an exposure process. This process is to apply bright light to a variable-shaped mask, and to illuminate the illumination light that is adjusted by the variable-shaped mask with a projection optical system. An exposed substrate of the element is formed. #With the exposure device of the present invention, an exposure method capable of shortening the processing time can be realized. According to the present invention, in the so-called maskless exposure technology, in order to form a desired pattern in a variable-shaped mask, the variable-shaped mask can be greatly reduced to supply a pattern in accordance with the pattern. The dimming room. Therefore, the maskless exposure method and the processing capacity (capacity) of the maskless exposure device can be greatly improved. 'Highly productive exposure devices and exposure methods can be realized. Moreover, by using the exposure method of the present invention in the lithography step, In the case where a gate 4 mask can be used, it is possible to manufacture components such as a semiconductor integrated circuit with high productivity, thereby reducing component manufacturing costs. [Embodiment] Δ Hereinafter, the i-th embodiment of the two-dimensional dimming element of the present invention will be described with reference to FIGS. 1 to 4. 15 200540457 The entire one-dimensional dimming element VM1 Fig. 1 is a plan view showing this embodiment. The M σ light% element VM1 has a light-adjusting it element MU (made of a micro-mirror) and a dimming element array 11. Each dimming element MU is arranged, for example, at the point of the square of the square cube on the X-axis and the Y-axis formed orthogonally in the figure. Here, the so-called positron buckles are arranged at regular intervals in the x-axis direction at a first interval, and are arranged at regular intervals in a wall direction at a second interval. The first interval and the second interval may be equal. A signal line Sig is connected to the control circuit mechanism 12 and called through the signal line. A signal processing device (not shown) supplies a shape signal (pattern shape signal) to be formed on the two-dimensional dimming element M1 as a basis for phase light distribution. . " Ten pairs of control circuit mechanisms 12 constituting the two-dimensional dimming element VM1 of the present invention will be described using Fig. 2. The control circuit mechanism 1 2 ′ shown in FIG. 2 is composed of a signal processing system 2 and a signal composed of a charge-coupled element (hereinafter referred to as “⑽”)… a relay mechanism 120. The signal holding and transferring mechanism 120 is formed: on a semiconductor substrate (not shown), a left γ⑽ (LC) which transfers electric charges to a ⑽ of the Y direction is provided on the-side (left) end of the X direction, and the χ direction is + W right side) has a right YCCD (RC) 'that transfers the charge to the CCD in the γ direction and an XCCD in the center of the 乂 direction that has a plurality of CCDs in the γ direction: XC). The structure of the left YCCD (LC), right YCCD (RC), and xccd (xc) of this temple differs greatly from the normal three-phase CXD structure by one. 16 200540457 The left YCCD (LC) 'is formed by the left Y transition path DL provided on a semiconductor substrate (not shown), and the second phase left γ transfer electrodes F1, F2, F3, F4, F5, and second phase left Y transfer electrodes G1, G2, G3, G4, G5, third phase left Y transfer electrodes H1, H2, H3, H4, H5, and γ transfer signals that supply signals to the first phase left Y transfer electrodes F1 to F5 Line Q1, which supplies the signal to the above-mentioned second phase left γ transfer electrode G 丨 ~ G5, and the γ-transfer signal line Q2, which supplies the signal to the above-mentioned third phase left γ transfer electrode H 丨 ~. . The right YCCD (RC) is a right gamma transfer electrode DR formed on the right gamma transfer path DR provided on a semiconductor substrate (not shown), i-phase right gamma transfer electrode] 丨, J2, J4, J5, second phase right Y transfer Electrodes K1, K2, K3, K4, K5, 3rd-phase right-handed electrodes L1, L2, L3, L4, L5, and γ-transmission signal lines that supply signals to the above-mentioned first-phase right-handed electrodes η ~ J5 Q4. The signal is supplied to the γ transfer signal line Q5 of the second phase right γ transfer electrodes K1 to K5, and the γ transfer signal line Q6 is supplied to the third phase right γ transfer electrodes 11 to K5. XCCD (XC) is a plurality of X transfer paths D35, D4, D5, etc. provided on a semiconductor substrate (not shown) parallel to the X direction, and a first phase X transfer electrode Al (parallel to the Y direction) is formed thereon, A2, A3, A4, A5, second phase X transfer electrodes B1, B2, B3, B4, B5, third phase X transfer electrodes ci, C2, C3, C4, C5, and supply signals to the above-mentioned first phase χ X transfer signal line pa of transfer electrodes A1 to A5, X transfer signal line PB of the second phase X transfer electrodes B1 to B5, and X transfer of the third phase X transfer electrodes C1 to C5. Signal line Pc 17 200540457. The left Y transfer path DL and X transfer paths D3 to D5, etc., and the right Y transfer path DR and X transfer paths ⑺ to ⑴, etc. are connected to each other as shown in FIG. 2 to maintain the charge energy in each transfer path. Move each other. In the second figure, in order to show the shape and positional relationship of the X transfer paths D3, D4, D5 and the right γ transfer path DR, in the area surrounded by the wave lines V1 and V2, the X transfer electrodes C5 and the like and the right γ are deleted. The electrodes L5 and other parts are transferred, but in fact, in the area surrounded by the wave lines V1 and V2, of course, such electrodes should also be formed. The shape signal supplied from the outside to the two-dimensional dimming element VM1 of the present invention through the A line Sig is the input signal processing system 121, where it is converted into a dimming signal and supplied to the signal provided through the signal line S1 or S2. The input part D0L of the left γ transfer path DL or the input part doR of the right Y transfer path dr is held by the transfer mechanism 1 20 at both ends in the X direction. In synchronization with this dimming signal, the signal processing system 丨 2 1 generates a 3-phase Y clock signal, and supplies each phase signal to the γ transfer signal line Q 丨, Q4, γ transfer signal line Q2, Q5, Y transfer signal line Q3 , Q6. In addition, the signal processing system 121 also generates three-phase X clock signals ρA, PB, and pc, and supplies each phase signal to the X-transmission signal lines PA, PB, and PC. Also, 'when the dimming distribution formed on the dimming element array 1 1 (a feature of the two-dimensional dimming element VM1 of the present invention) is moved, it is best to see the direction of the movement' through the signal line S1 or S 2 One party 'supplies the dimming signal to one of the two input sections DOL, D0R. The details will be described later. The following is a description of the case where the dimming signal is supplied to the left CCI via the signal line S1 (LC ^ 18 200540457 input section D0L.) The input of the dimming signal lies in the example of the signal, forming a negative second / D〇L, as the corresponding dimming

轉送訊號線供應至第二何γ::1電荷，會因以Y 1日及γ轉送電極 γ時鐘訊號’而移動至左¥轉送路徑：位之The transfer signal line supplies to the second γ :: 1 charge, which will move to the left because of the Y 1 day and γ transfer electrode γ clock signal ’.

轉送電極F1之正下方。此睹，私+ 甲之弟1相左Y 的正電位’在γ轉送訊號Q3施加二唬Q2施加弱Directly below the transfer electrode F1. See, the positive potential of the private + 1th phase left Y ’s ’is applied to the γ-transmission signal Q3, two bluffs, Q2, and weak

依序變化，所供應之γ方向時鐘訊號向在γ轉运心虎Q1施加〇電位號Q2施加正電位、在γ 隹υ轉迗讯 , 轉I讯唬Q3施加弱的正電位。據t，位於第1相左γ轉送電極^正下方之第i電荷， ==第2相左γ轉送電極G1之正下方。進一步的， =向：鐘訊號變化，而在γ轉送訊號線φ施加弱的正 Q3 “ Y轉运讯號線Q2施加0電位、在Y轉送訊號線 =加正電位時，第1電荷即移動至第3相左Y轉送電極FH之正下方。 “此外，# 3相之Y時鐘訊號結束變化之1周期，γ時鐘訊號回到最初之狀態（在γ轉送訊號線qi施加正電位、在Y轉运訊號線Q2施加弱的正電位、在γ轉送訊號線Q3 施加0電位之狀態）時’第】電荷即移動至第1相左丫轉 ^ 之正下方。在此狀態下，訊號處理系統1 2 1透過^唬線S 1，將下一調光訊號供應至Y轉送路徑DL·之輸 ^ 。而且，作為對應此訊號所形成之一例，負的第电荷被保持在第1相左γ轉送電極F丨之正下方。 19 200540457 因此，與γ時鐘訊號變化 — 之周期同步，透過訊號線 S1將既疋之調光訊號依序 .^ ^ 輸入部D0L，藉此，即能在構成左CCD(LC)之第i相左相左γ轉送電極⑴〜仍^正^電極F1〜F5或第2 調光訊號的電荷。、了方’依序形成對應既定帝桎上述動作之反覆進行，在所有第2相左γ轉送下方’形成既定調光訊號…成階段， ^虎處㈣統⑵㈣XCCD(XC)，將保持於左yccd⑽ 之上述各電荷（調光訊號）轉送供應至XCCD内（xC)。 :即’通過Y轉送訊號線Qi〜q3、將供應至左 ()之左Y轉送電極F1〜F5、G1〜G5、H1〜H5的斤有"1 4里σΤΙ唬5又為0電位或負電位，通過X轉送訊號線 '、正電位之X時鐘訊號供應至XCCD(xc)中之第i相X 轉运電極A1。藉此，即能將分別保持於左Y轉送路徑DL 二之第2相左Y轉送電極G1〜G5正下方之電荷(調光訊 ^) ’在保持其Y方向位置關係（分布）的狀態下，移動至In order, the supplied γ-direction clock signal applies a 0 potential to the γ transit heart tiger Q1. A positive potential is applied to Q2, a signal is turned to γ 隹 υ, and a weak positive potential is applied to Q3. According to t, the i-th charge located directly below the left γ transfer electrode ^ of the first phase is directly below the left γ transfer electrode G1 of the second phase. Further, = to: the clock signal changes, and a weak positive Q3 is applied to the γ transfer signal line φ "0 potential is applied to the Y transfer signal line Q2, and when the Y transfer signal line = plus positive potential, the first charge moves Go directly below the left Y transfer electrode FH of phase 3. "In addition, the Y clock signal of phase # 3 ends one cycle of change, and the γ clock signal returns to the original state (a positive potential is applied to the γ transfer signal line qi, When the transport signal line Q2 is applied with a weak positive potential, and when the γ-transmission signal line Q3 is applied with a potential of 0), the "first" charge moves directly below the left phase of the first phase. In this state, the signal processing system 1 2 1 passes the signal line S 1 to supply the next dimming signal to the output of the Y transfer path DL ·. Furthermore, as an example formed in response to this signal, the negative first electric charge is held directly below the left γ transfer electrode F 丨 of the first phase. 19 200540457 Therefore, in synchronization with the γ clock signal change cycle, the existing dimming signals are sequentially transmitted through the signal line S1. ^ ^ Input section D0L, which can be used to form the left i-th phase of the left CCD (LC) On the other hand, the γ transfer electrodes ⑴ to ^ are still positive ^ electrodes F1 to F5 or the charges of the second dimming signal. "Lefang" successively formed the above-mentioned actions corresponding to the established emperor's order, and under all the second phase left γ transfers, the predetermined dimming signal was formed ... At the stage, ^ 虎处㈣系 ⑵㈣XCCD (XC), will remain at left yccd⑽ The above electric charges (dimming signals) are transferred to the XCCD (xC). : That is, through the Y-transmission signal lines Qi ~ q3, the left Y-transmission electrodes F1 ~ F5, G1 ~ G5, and H1 ~ H5 supplied to the left () have the quotient of 1 and 4; The negative potential is supplied to the i-th phase X transfer electrode A1 in the XCCD (xc) through the X-transmission signal line and the X clock signal of the positive potential. Thereby, the charges (dimming signals) held directly under the second phase left Y transfer electrodes G1 to G5 of the second phase of the left Y transfer path DL 2 can be maintained while maintaining their Y-direction positional relationship (distribution), Move to

XCCD(XC)中之各轉送路徑D3〜D5等中左端之第1相X 轉送電極A1之正下方，並供應至此。由於XCCD(XC)亦係電荷耦合元件，故將盥上述卢 =ac)所示之例同樣依序變化之3相之χ時鐘訊號二序靶加於乂轉送訊號線PA，PB，pc，藉此，當然能將保持於上述各轉送路徑D3〜D5等上之X轉送電極A1正下方之上述電荷（調光訊號）依序移動至+ X方向。又’本例中，由於XCCD(XC)亦係3相CCD，因此能 20 200540457 保持一個獨立調杏域（以下，簡稱之部分，如第2圖之虛線所示之區送路徑D 5與從第；7 ·合要件」)C U 〇，係包含-個X轉 cn,v ^ 目到弟3相之X轉送電極之KAU1 ci)分別父又部分的區域。，此一個電荷耦合上之夂γ触…千件在相當於x轉送路徑D5 之。XU^A1，B1，C1正下方之3處，且有光訊號之功能，但本發 ^ 月之一、准调光凡件VM1，如後述般，係根據其中保持於第2 A轉迗电極B1正下方之調光訊號’來^工制上述調光元件 %兀仵陣列1 1中之調光要件。因此，以下，將形成於各電葙鉍人 t Μ 电何耦合要件中之x轉送路徑D3〜D5 契第2相X轉送電極Bl〜 ^ 「訊號保持要件」。之父又點之各區域，特稱為 XCCD(XC)係具有電荷（訊號）保持功能之訊號保持要件成二維排列的訊號保持要件陣列，且具有訊號轉送機構（將保持於該訊號保持要件之雷共p田土 — ^ 千之電何（调先訊號）轉送往沿X方向相鄰之訊號保持要件）之功能。此時，可將x方向視為第i 方向，又，左YCCD(LC)具有訊號供應機構（將訊號供應至排列於XCCD(XC)中之-X方向端之各訊號保持要件）的功能。此外，第2圖中，由於紙張大小，僅在χ方向顯示5 =、Y方向顯示5歹，J，合計25個的電荷耗合要件數量，但貫際上應形成之電荷麵合要件數當然遠多於此。而且，今Each of the transfer paths D3 to D5 in the XCCD (XC) is directly below the first phase X transfer electrode A1 at the left end, and is supplied there. Since XCCD (XC) is also a charge-coupled element, the three-phase χ clock signal secondary sequence target of the example shown in the above-mentioned Lu = ac) is also added to the signal line PA, PB, pc. Therefore, of course, the above-mentioned charges (dimming signals) held directly under the X transfer electrodes A1 on the above-mentioned respective transfer paths D3 to D5, etc. can be sequentially moved to the + X direction. Also, in this example, since XCCD (XC) is also a 3-phase CCD, it can maintain an independent tuning region (hereinafter, abbreviated part, as shown in the dotted line in Figure 2). No. 7: "Requirements") CU 〇, which is an area containing one X to cn, v ^ to the three-phase X-transmission electrode KAU1 ci), respectively parent and part. The 夂 γ contact on this charge coupling ... a thousand pieces are equivalent to the x transfer path D5. XU ^ A1, B1, C1 are three places directly below, and have the function of optical signals, but one of the month of this issue, the quasi-dimming VM1, as described below, is maintained in the 2A to the electricity The dimming signal directly below the pole B1 is used to manufacture the dimming requirements in the above-mentioned dimming element% vulture array 11. Therefore, in the following, the x-transmission paths D3 to D5 formed in the electric coupling elements of each of the electric bismuths and the second phase X-transmission electrodes Bl to ^ "signal holding requirements" will be described. Each area that the father also ordered, specially called XCCD (XC) is a signal holding element array with a two-dimensional array of signal holding elements with a charge (signal) holding function, and has a signal transfer mechanism (will be held at the signal holding element The Thunder is a p-field-^ The function of Qian Zhi Dian He (tune first signal) is transferred to the signal maintenance requirements adjacent to the X direction). At this time, the x direction can be regarded as the i-th direction, and the left YCCD (LC) has a function of supplying a signal (supplying a signal to each signal holding element arranged at the -X direction end of the XCCD (XC)). In addition, in the second figure, due to the size of the paper, only 5 = is displayed in the χ direction, and 5 歹, Y is displayed in the Y direction. The total number of charge consumption requirements is 25, but of course the number of charge surfaces should be formed. Far more than that. And, today

排列數在X方向或¥方向之至少-方，例如以画列I 上較佳。 21 200540457 接著，針對XCCD(XC)内之一個電荷I馬合要件cu，使用弟3圖詳細加以说明。第3(A)圖，係顯示在第2圖中之X轉送路徑D3、與從第1相到第3相之X轉送電極之一個（A3，B3, C3)分別交叉之位置所形成，圖中以虛線表示之電荷耦合要件cu 及其周圍之電荷耦合要件的放大圖。第3(B)圖係表示俯視圖之第3(A)圖中之線段A — A，的截面圖，第3(C)圖係表示第3(A)圖中之線段B — B’的截面圖。此處，第3(A)圖、第 ® 3(B)圖、第3(c)圖所示之χγζ座標之面向，與第2圖中所不者相同。在石夕晶圓等半導體基板50之表面，與X軸方向平行，形成X轉送路徑D2, D3, D4與絕緣區域Ε1，Ε2,以，Ε4。此處，X轉送路徑D2〜D4係由半導體5〇本體所構成，另方面，絕緣區域E1〜E4係將半導體基板5〇加工，藉由氧化膜來形成絕緣層。 Φ 在该等之上面，與y方向平行形成第1相X轉送電極 A2, A3, A4、第2相X轉送電極B25 B3, B4、第3相X轉迗電極C2，C3，C4。又，在各X轉送電極A2〜A4、B2〜B4、 2 C4 '及轉送路徑D2〜D4之間，形成矽氧化膜（二氧化石夕膜）等絕緣膜，來確保各X轉送電極A2〜A4, B2〜B4, C2〜B4、及轉送路徑⑺〜以間之絕緣性。，此處，包何耦合要件CU中之X轉送路徑D3中之第2 轉迗包極B3之正下方，構成上述之訊號保持要件BD。構成在其他電荷耦合要件中亦相同。而且，在相當於 22 200540457 第2相X方向轉送電極B2〜B4之各電荷輛合要件仙等之大致中央位置，形成有開口 5 1,52,53,54,55,56,57,58, 59(作為用來取出保持於各電荷麵合要件⑽1等訊號之路仪）。又，第3(B)中之電極B2c，B2d、電極B3c，B3d、電極B4c，B4d係分別表示位於第2相χ轉送電極b2〜b4中之開口 54, 55, 56兩端位置之部分。電荷耦合要件CU可藉由微影製程來製造。由於其製造方法與-般之CCD製造方法大致相同，故省略其詳細說，明。其次，針對調光元件（包含構成調光元件陣列n之微小反射鏡）之第1實施形態加以說明。第4圖係構成調光元件陣列n之一個調光元件放大圖。X，因電荷_合要件⑶I部分之訊號保持元件 BD亦構成調光元#則部分，故第4圖中，係一併顯示電荷耦合要件CU。調光元件MU係由調光要件49(由微小反射鏡1〇a、驅力黾極3一a，33b、基座板32、連接電極36，37，38，39，40， 1包源配線42、接地配線46、及控制電晶體43、連接頭48等所構成）、及電荷耦合要件cu中之上述訊號保持要件BD所形成之要件。又，在第2圖所示之xccd(xc) 中，二維排列之其他電荷耦合要件上，當然亦能形成與調光要件49相同之調光要件，形成調光元件二維排列之調光兀件陣列Η。因此，本例中，訊號轉送機構之xccd(xc) 與調光元件陣列1 1係層積之構造。 23 200540457 又，第4圖中’為了方便起見，雖係將連接頭48之下 i«而面48a與半導體基板5()描綠成不連接，但實際上，如圖中之箭頭所示，該等係連接。又關方、連接電極38之下面^與控制電晶體U之端部AO以及連接電極41之下面…與作為接地配線46 P刀的連接邛47 ’雖亦描繪成彼此分離，但如圖中箭頭所示，该專各部亦係彼此連接。以下，針對調光元件Mu之構成，與其製造方法之一例同時加以說明。 ,、百先，在形成電荷耗合要件CU1之半導體基板5〇上，形成由二氧化秒等構成之未圖示的第丨絕緣膜，在對庫第 1絕緣—膜中之上述開口 55之位置，形成第！開口部。又，在此第1開口部埋人多結晶秒等’來形成連接頭48。而且，將連接頭48 t上端部加以氧化等，藉此來形成 45。夕其次，在連接頭48上及第1絕緣膜上，於全面形成由多結晶秒等所構成之材料（成膜），僅殘留待形成電源配線仏接地配線46、控制電晶體43之處，將此多結晶石夕加以除去。X ’在所形成之電源配線42、接地配、線扑、控制 >電晶體43等之上層，形成由矽氧化膜等構成之未圖= 的第2絶緣層’於此第2絕緣層中’在對應控制電晶體a 之端部44及接地電極46之連接部47之位置，形成第2 開D部。在該狀態下’從第2絕緣層上方，將金屬或低阻抗之 24 200540457 =導體等第i配線材料加以成膜。藉此，在上述第2開口 =形成埋入第！配線材料之連接電極从4〇。又，在形成於第2絕緣層上之第1 綠湖八L曰弟1配線材科中，藉由敍刻等將既定 π刀以外加以除去，來形成連接電極37,4〇。The number of permutations is at least -square in the X direction or the ¥ direction, for example, it is preferable to use the drawing I. 21 200540457 Next, a detailed description of a charge I in the XCCD (XC) will be described with reference to Figure 3. Figure 3 (A) is formed by showing the X transfer path D3 shown in Figure 2 and the position where one of the X transfer electrodes (A3, B3, C3) intersects from the first phase to the third phase. The enlarged view of the charge-coupling element cu and the surrounding charge-coupling elements indicated by the dotted line in the figure. Figure 3 (B) is a cross-sectional view of line segment A-A, in Figure 3 (A) of the top view, and Figure 3 (C) is a cross-section of line segment B-B 'in Figure 3 (A). Illustration. Here, the directions of the χγζ coordinates shown in Fig. 3 (A), Fig. 3 (B), and Fig. 3 (c) are the same as those in Fig. 2. On the surface of the semiconductor substrate 50 such as the Shixi wafer, the X-transmission paths D2, D3, and D4 and the insulating regions EI, EI, and EI are formed parallel to the X-axis direction. Here, the X transfer paths D2 to D4 are formed by the semiconductor 50 body. On the other hand, the insulating regions E1 to E4 are processed by the semiconductor substrate 50, and an insulating layer is formed by an oxide film. Φ On these, the first phase X transfer electrodes A2, A3, A4, the second phase X transfer electrodes B25 B3, B4, and the third phase X transfer electrodes C2, C3, C4 are formed in parallel with the y direction. In addition, an insulating film such as a silicon oxide film (stone dioxide film) is formed between each of the X transfer electrodes A2 to A4, B2 to B4, 2 C4 'and the transfer paths D2 to D4 to ensure each of the X transfer electrodes A2 to Insulation between A4, B2 ~ B4, C2 ~ B4, and transfer path ⑺ ~. Here, just below the second transfer pole B3 in the X transfer path D3 in the coupling requirement CU, the above-mentioned signal retention requirement BD is constituted. The structure is the same in other charge-coupling elements. In addition, openings 5 1,52,53,54,55,56,57,58 are formed at approximately the center of each of the charge-receiving elements B2 to B4 corresponding to the second-phase X-direction transfer electrodes B2 to B4 of 22 200540457, 59 (as a road device for taking out signals such as 1 required on each charge surface). Further, the electrodes B2c, B2d, electrodes B3c, B3d, and electrodes B4c, B4d in the third (B) indicate portions located at both ends of the openings 54, 55, 56 in the second phase χ transfer electrodes b2 to b4, respectively. The charge coupled element CU can be manufactured by a lithography process. Since its manufacturing method is almost the same as the general CCD manufacturing method, its detailed explanation is omitted. Next, a first embodiment of a light control element (including a small mirror constituting the light control element array n) will be described. Fig. 4 is an enlarged view of one light adjusting element constituting the light adjusting element array n. X, since the signal holding element BD of the charge_complementary GUI part also constitutes the dimming element #regular part, so in Figure 4, the charge-coupling element CU is shown together. The light-adjusting element MU is composed of a light-adjusting element 49 (by a micro-mirror 10a, a driving pole 3a, 33b, a base plate 32, and a connection electrode 36, 37, 38, 39, 40, and 1 source wiring. 42, the ground wiring 46, and the control transistor 43, the connector 48, etc.), and the above-mentioned signal retention requirements BD of the charge coupling requirements cu formed by the requirements. In addition, in xccd (xc) shown in FIG. 2, other charge-coupling elements arranged two-dimensionally can of course form the same dimming elements as the dimming element 49 to form a two-dimensional array of dimming elements. The array of elements is Η. Therefore, in this example, the xccd (xc) of the signal transfer mechanism and the dimming element array 11 are laminated. 23 200540457 In the fourth figure, 'For convenience, although the surface 48a of the connector 48 i «and the surface 48a are not connected to the semiconductor substrate 5 (), in fact, as shown by the arrow in the figure These are connected. On the other side, below the connection electrode 38 and below the end AO of the control transistor U and below the connection electrode 41 ... and connection 47 as the ground wiring 46 P knife 47 'is also depicted as being separated from each other, but as shown by the arrow in the figure As shown, the departments of the department are also connected to each other. Hereinafter, the configuration of the light control element Mu will be described together with an example of a manufacturing method thereof. Baixian, on the semiconductor substrate 50 forming the charge depletion requirement CU1, an unillustrated first insulating film composed of dioxide seconds and the like is formed, and the first opening 55 in the first insulating film of the library is formed. Position to form the first! Openings. In addition, polycrystalline crystallization, etc. is buried in the first opening to form the connector 48. Then, the upper end of the connector 48 t is oxidized or the like to form 45. Secondly, on the connector 48 and the first insulating film, a material (film formation) composed of polycrystalline seconds is formed on the entire surface, and only the power wiring, the ground wiring 46, and the control transistor 43 are to be formed. This polycrystalline stone was removed. X 'forms a second insulating layer composed of a silicon oxide film and the like on the upper layer of the formed power wiring 42, ground wiring, wire flutter, control > transistor 43, etc.' in this second insulating layer A second open D portion is formed at a position corresponding to the end portion 44 of the control transistor a and the connection portion 47 of the ground electrode 46. In this state ', a metal or a low-resistance 24 200540457 = conductor, such as a conductor, is formed from above the second insulating layer. With this, the second opening = the formation of a buried first! The connecting electrode of the wiring material is from 40. In addition, in the first green lake eight L formed the first wiring material section formed on the second insulating layer, the connection electrode 37, 40 is formed by removing the predetermined π knife by engraving or the like.

然後’在形成連接電極37, 4〇之基板5〇上，進_牛 =石夕氧化膜等所構成之未圖示之第3絕緣層加以成I f/、上’❹：形成^切等所構叙絕緣性之基座板 ―。而且，在基絲32及第3絕緣層之既定位置，形成 ;之3半開；1；在該狀態下，從基座板32上，將金屬或低阻抗之〜寻之第2配線材料加以成膜。藉此，在上述第 3開口部’形成埋入第2配線材料之連接電極Μ』。而且’在形成於基座板卜夕楚ο π ^ 耸丈… 弟配線材料中，藉由蝕刻寻末除去既定部分以外的部分，來形成驅動… 動電極33b、及導通線34。. *一 “其次，在基座板32上’將高阻抗之配線材料加以成膜，猎由圖案化來形成高阻抗配線35。驅動電極…與驅動電極33b係藉由此高阻抗配線35來進行電氣性連接。還有，局阻抗配線35亦能從上述第2配線材料’與驅動電極…， 33b之加工同時來形成。此時，將高阻抗配線μ之線寬加工成較驅動電極33a，33b之線寬為細，即能增大其電阻。口之後，在形成驅動電極33a，33b等基座板32上，乂 =由矽氧化膜等所構成之第4絕緣膜’在第4絕緣層之 ^位置形成第4開°部。然後，從其上方形切等:膜，错此’在第4開口部中形成支持部31，在第4絕緣層之上 25 200540457 面’形成構成反射鏡〗0a之矽膜。钮笪古6 # 、此外，在該矽膜上形成紹寺冋反射率金屬或電介質多層 ^ ^ ^ c 6 貝夕層娱，來確保反射鏡10a表面之咼反射率。其次，將上述矽膜加以圖案化么#丄〆形成各個反射鏡10a 〇 :、、'、後猎由採用氟酸之蝕刻，將上 —甘—1 攻弟4絕緣層加以除去，在土座板32上與反射鏡} 〇a之間， 4… $成施使反射鏡10a傾斜動作之空間。另一方面，上 — 乩未圖不之第1到第3之絕緣層無需加以除去，可作為絕緣之構成構件。象構件而成為調光元件Mu 藉由以上步驟完成調光元件MlJ。又’調光要件49及調光元件Mu之制、主 . τ m υ之製造方法不受限於上述例，當然亦能使用其他方法來製造。 g此處’關於基座板32、電源配線42、接地配線46, 不疋封閉在一個調光元件Mu内之盖 . , ^ U内之構成要件，而係與構成 :周先7°件陣列1…他調光元件贿接合之構成要件。电源配線42係與X方向相鄰接之其他調光元件則之電源配線在各端部42a，42b相連接。亦即，電源配線Μ,係構成為連結調光元彳Mu(構成調光元件陣列⑴中、同Y位置排列於X方向一 <列凋先凡件鮮組的X方向配 :’…終端部連接在未圖示之電源電路、供應既定之電源電位。同樣的，接地配線46係與在χ方向鄰接之其他調光 ^牛則之接地配線和各端部輪肩連接，構成為連結相同Y位置排列於χ方向之一列調光元件群組的X方 26 200540457 向配線’其終端部係連接在未圖之接妯带& 口丁疋接地電路亚供應既定 =二又，絕緣性基座板32係與其他調光元件_(與 5周光兀件49力xr } 連接〜鄰接)中之基座板連接。雨極1 4係連接於驅動電極饥，由此，經由連接电極4〇, 4!連接（導通）於接地配線“上之連接部ο。夢 ^在驅動電極33b ’透過接地配線46常時供應既定之^ 二Γ立：又’微小反射鏡1Ga係透過支持部31藉由導通線 34與驅動電極33b導通，故其電位常時保持接地電位。相對於此，驅動電極33a係透過連接電極％ 37 % 及控制電晶體43與電源電極42連接，且透過高阻抗配線、5與驅動電極33b連接。控制電晶體43係由n型半導體或ρ型半導體構成，以構成場效型電晶體fet(係將透過絕緣膜45連接之連接頭48上端部作為間電極）。其一端係盘電源配線42連接’供應既定之電源電位，另一端則係透過端部44連接至連接電極38。因此’驅動電極33a之電位’可藉由控制控制電晶體 43之導通或不導通來加以變化。亦即，若控制電晶體a 導通，則驅動電極33a與電源電極42導通，由此供應電源電位。另一方面’若控制電晶體43不導通，則驅動電極：：與電源電極42不導通，驅動電極33a透過高阻抗配線μ 與驅動電極33b連接，故驅動電極33a之電位亦與驅動電極33b同樣成為接地電位。此處，舉一例而言，當上述電源電位為正、接地電位為負之情形，在控制電晶體43之導通時，驅動電極33&之 27 200540457 電位為正、而驅動電極33b及微小反射鏡1 〇a之電位則為負。此時，在驅動電極33a與微小反射鏡1 〇a之間，產生靜電引力，在驅動電極33b與微小反射鏡1〇a之間產生靜電斥力。其結果，微小反射鏡1 〇a傾斜，其反射面之法線方向從圖中之+z方向變化至傾斜於+χ方向之方向。另方面’在控制電晶體43之非導通時，驅動電極 33a、驅動電極33b及微小反射鏡1〇a之電位皆為負，驅動電極33a與微小反射鏡1〇a之間及驅動電極33b與微小反射鏡10a之間皆產生靜電斥力。因此，藉由此靜電斥力之平衡，微小反射鏡10a反射面之法線方向係朝向與圖中+ Z方向一致之方向。又，控制電晶體43之導通與不導通係由連接頭48所產生之包荷正負（或〇)來決定，亦即，由保持於電荷耦合要件CU之電荷正負等來決定者，故微小反射鏡i〇a之傾Then, on the substrate 50 where the connection electrodes 37, 40 are formed, a third insulating layer (not shown) composed of a silicon oxide film and the like is formed to form I f /, and the top is formed. Constructed insulating base plate-. In addition, at the predetermined positions of the base wire 32 and the third insulating layer, 3 is formed half open; 1; in this state, from the base plate 32, a metal or a low-resistance second wiring material is formed. membrane. Thereby, a connection electrode M 'in which the second wiring material is embedded is formed in the third opening portion'. In addition, the driving electrode 33b and the conductive line 34 are formed by removing portions other than a predetermined portion of the wiring material formed by the base plate bu ^ ^ ^ d ... * One "Secondly, a high-impedance wiring material is formed on the base plate 32, and a high-impedance wiring 35 is formed by patterning. The driving electrode ... and the driving electrode 33b are formed by this high-impedance wiring 35. Electrical connection is made. Also, the local impedance wiring 35 can be formed simultaneously from the above-mentioned second wiring material 'and the processing of the driving electrodes ..., 33b. At this time, the line width of the high-impedance wiring μ is processed to be larger than that of the driving electrode 33a. The line width of 33b is thin, which can increase its resistance. After the opening, on the base plate 32, such as the driving electrodes 33a, 33b, etc., 乂 = the fourth insulating film composed of a silicon oxide film, etc. A 4th opening portion is formed at the position of the insulating layer. Then, a square is cut from the upper portion of the insulating layer, etc .: The film is formed by forming a supporting portion 31 in the fourth opening portion and a surface of 25 200540457 on the fourth insulating layer. Mirror 〖0a silicon film. 笪笪古 6 # In addition, Shao Temple 绍 reflectivity metal or dielectric multilayer ^ ^ ^ c 6 is formed on the silicon film to ensure the reflection on the surface of the mirror 10a Secondly, do the above silicon films be patterned? The mirror 10a 〇: ,, ', and the post-hunting are removed by the etching using hydrofluoric acid, and the upper-Gan-1 attacker 4 insulation layer is removed, between the soil seat plate 32 and the reflector} 〇a, 4 ... $ Cheng Shi is a space for tilting the mirror 10a. On the other hand, the first to third insulating layers, which are not shown in the figure, do not need to be removed, and can be used as insulating constituent members. The image member becomes a light control element Mu. The dimming element M1J is completed by the above steps. The manufacturing method of the dimming element 49 and the dimming element Mu and the main component are not limited to the above examples, and of course, other methods can also be used for manufacturing. Ghere 'About the base plate 32, the power wiring 42, the ground wiring 46, not the cover enclosed in a dimming element Mu., ^ U constitutes the essential elements, but is related to the composition: Zhou Xian 7 ° array 1 ... The constituent elements of the dimming element for bridging. The power wiring 42 is connected to each end 42a, 42b of the other dimming elements adjacent to the X direction. That is, the power wiring M is configured to connect the dimming. Photoelements 彳 Mu (constituting the array of dimming elements), arranged in the X direction at the same position as the Y < row The X-direction distribution of the first fresh set: '... The terminal part is connected to a power circuit (not shown) to supply a predetermined power potential. Similarly, the ground wiring 46 is a ground wiring that is adjacent to other dimming ^ cows adjacent to the χ direction. It is connected to the shoulders of each end, and is configured to connect the X side of the dimming element group arranged in a row in the χ direction at the same Y position. 26 200540457 To the wiring, its terminal is connected to the connection belt (not shown) & The sub-supply of the grounding circuit is equal to two, and the insulating base plate 32 is connected to the base plate in the other dimming element (connected to the abutment of the 5-cycle light element 49 force xr}. The rain electrodes 14 and 4 are connected to the driving electrodes, and thus are connected (conducted) to the connection portion on the ground wiring "via the connection electrodes 40, 4 !. Dream ^ is always supplied to the driving electrode 33b 'through the ground wiring 46 Established ^ 2 Γ: Also, the micro-mirror 1Ga is connected to the drive electrode 33b through the support line 31 through the conductive line 34, so its potential is always maintained at the ground potential. In contrast, the drive electrode 33a is connected to the drive electrode% 37 The control transistor 43 is connected to the power electrode 42 and is connected to the driving electrode 33b through a high-impedance wiring. The control transistor 43 is composed of an n-type semiconductor or a p-type semiconductor to form a field-effect transistor fet (system The upper end of the connector 48 connected through the insulation film 45 is used as an intermediate electrode. One end is connected to the disk power wiring 42 to supply a predetermined power potential, and the other end is connected to the connection electrode 38 through the end 44. Therefore, the 'driving electrode The potential of 33a can be changed by controlling the conduction or non-conduction of the control transistor 43. That is, if the control transistor a is turned on, the driving electrode 33a and the power electrode 42 are turned on, thereby supplying On the other hand, if the control transistor 43 is not conductive, the driving electrode: is not conductive with the power electrode 42 and the driving electrode 33a is connected to the driving electrode 33b through the high-impedance wiring μ, so the potential of the driving electrode 33a is also connected to the driving The electrode 33b also has a ground potential. Here, for example, when the above-mentioned power supply potential is positive and the ground potential is negative, the drive electrode 33 & 27 200540457 potential is positive when the transistor 43 is turned on, and The potentials of the driving electrode 33b and the micro-mirror 10a are negative. At this time, electrostatic attraction is generated between the driving electrode 33a and the micro-mirror 10a, and between the driving electrode 33b and the micro-mirror 10a. As a result, an electrostatic repulsive force is generated. As a result, the micro-mirror 10a is inclined, and the normal direction of the reflection surface thereof is changed from the + z direction in the figure to a direction inclined to the + χ direction. On the other hand, the non-conduction of the control transistor 43 is controlled. At this time, the potentials of the driving electrode 33a, the driving electrode 33b, and the micro-mirror 10a are all negative, and are generated between the driving electrode 33a and the micro-reflecting mirror 10a, and between the driving electrode 33b and the micro-reflecting mirror 10a. Therefore, by the balance of the electrostatic repulsive force, the normal direction of the reflecting surface of the micro-mirror 10a is oriented in a direction consistent with the + Z direction in the figure. In addition, the conduction and non-conduction of the control transistor 43 are connected by The positive or negative (or 0) of the charge generated by the head 48 is determined, that is, determined by the positive and negative charges held by the charge coupling element CU, etc., so the tilt of the micromirror i〇a

斜角能藉由保持於電荷搞合要件cu中之訊號保持要件BD 所保持之電荷正負（或0)來控制。〜此外，上述電源電位及接地電位之正負設定，不受限述之例可以疋與上述正負相反者，當然亦可是其中之一為0者。如以上之說明，本實施形態中，調光元件Mu係根據保持於訊號保持要件（用來構成此要件）之訊號，來變更調，元件49中微小反射鏡1〇a之角度，亦即，能變化照射於微小反㈣10a之照明光對既定方向之反射效率，亦即能進行調光。 28 200540457 此外，上述調光元件MU,作為調光元件陣％ "，由於係形成於第2圖所示之XCCD(XC)上之所有電荷耗八要件cu，因此本發明之二維調光元件VM1，可根據xccd⑽ 上各訊號保持要件BD之調光訊號’在調光元件陣列η上之各調光元件MU，形成所欲分布形狀之調光狀態。以下，針對此調光分布之形成’使用f 2圖及第5圖加以說明。第5(A)圖係顯示待形成於調光元件陣列u上之各調光元件MU上之二維調光資料SD之圖，圖中，以白或黑所示之1位元之調光訊號係在χ方向排成m列、在γ方向排成η列者。此處，上述之白及黑，例如白係對應i，黑係對應0。又’ 一維調光資料SD亦可是記憶於構成二維調光元件VM1之控制電路機構12中之訊號處理系統丨2 1者，或疋記憶在不同於二維調光元件VM1之另一外未圖示的訊 #b處理裝置，從該處透過訊號線Sig作為形狀訊號來加以供應者。此外’其記憶形態可以是記憶元件上之電氣訊號，亦可是大型記憶裝置上之磁性訊號等訊號。The oblique angle can be controlled by the positive or negative (or 0) of the electric charge held by the signal holding element BD held in the electric charge engaging element cu. In addition, the positive and negative settings of the power supply potential and the ground potential are not limited. The example described above may be the opposite of the positive or negative, and of course, one of them may be zero. As explained above, in this embodiment, the dimming element Mu changes the tone according to the signal held in the signal holding element (used to constitute this element), and the angle of the tiny mirror 10a in the element 49, that is, It can change the reflection efficiency of the illuminating light irradiated on the minute reflection 10a to a predetermined direction, that is, it can perform dimming. 28 200540457 In addition, the above-mentioned dimming element MU, as a dimming element array% ", because all the charges formed on the XCCD (XC) shown in Fig. 2 consume eight elements cu, the two-dimensional dimming of the present invention The element VM1 can form a dimming state of a desired distribution shape according to each dimming element MU on the dimming element array η according to the dimming signals of the signal holding requirements BD on the xccd⑽. The formation of this dimming distribution will be described below using FIG. 2 and FIG. 5. FIG. 5 (A) is a diagram showing the two-dimensional dimming data SD on each dimming element MU to be formed on the dimming element array u. In the figure, one-bit dimming shown by white or black The signals are arranged in m rows in the χ direction and n rows in the γ direction. Here, the above-mentioned white and black, for example, white corresponds to i, and black corresponds to 0. Also, the one-dimensional dimming data SD may also be a signal processing system stored in the control circuit mechanism 12 constituting the two-dimensional dimming element VM1, or may be stored in another one different from the two-dimensional dimming element VM1. A signal #b processing device (not shown) is supplied from there through a signal line Sig as a shape signal. In addition, its memory form can be an electrical signal on a memory element or a magnetic signal on a large memory device.

此處’二維調光資料SD之Y方向排列數η，係與調光兀件陣列1 1上之調光元件MU上之Υ方向排列數（亦即，與排列於XCCD(XC)上之電荷耦合要件CU之Υ方向之排 ]數相同）相等’ X方向之排列數m較調光元件MU之X 方向排列數（亦即，與電荷耦合要件CU之X方向之排列數相同）為多。 29 200540457 在形成上述調光分布之際，訊號處理系統ΐ2ι，係先通過Y轉送訊號線Q1〜Q3，對左YCCD(LD)之左γ轉送電極F1〜F5、G1〜G5、F1〜F5’開始供應上述3相γ時鐘訊號。然後，訊號處理系統121，將二維調光資料sd中、並排於列Xl(位於x方向右端位置）上之調光資料依其Υ 方向位置Υ1，Υ2, Υ3，...γη之順序，與γ時鐘訊號上述變化之1周期同步，-個一個作為調光訊號透過訊號線si 依序供應至左YCCD(LC)之輸入部d〇L。此時，被达至輸入部D0L之調光訊號，例如，若係二維調光資料SD中之訊號為〇的話即作為由〇電位所構成之訊號，若為1的話則作為負電位所構成之訊號。訊號處理系統121藉係重複m周期上述訊號轉送，將並排於二維訊號SD上列X1之調光資料全部供應至左 YCCD(LC)後，驅動xCCD，如上述般，將保持於左yccd(lc) 之調光訊號轉送供應至XCCD(XC)内左端排成一列之電荷麵合要件CU0等中之訊號保持要件BD。其次，訊號處理系統121係將二維調光資料SD中、並排於列X2上之調光資料與上述同樣的，作為調光訊號依序供應至輸入部D〇L。訊號處理系統121在重複此㈤周期後，再驅動XCCD(XC)，將保持於XCCD(XC)上左端排 j 一列之電荷耦合要件CU〇等中之訊號保持要件BD之先岫凋光说唬列，轉送至於+ x方向相鄰接之各電荷耦合要件中之訊號保持要件BD，且將保持於YCCD(LC)上新的訊號列轉送供應至XCCD(XC)上左端排成一列之電荷耦合要 30 200540457 * 件CU0等中之訊號保持要件BD。若設XCCD(XC)之各電荷耦合要件CU之X方向排列為q列的話，則藉由重複q次包含上述XCCD(XC)驅動之一連串動作，來完成對XCCD(XC)之各電荷耦合要件CU 内所有訊號保持要件BD之既定二維調光資料SD的供應。又，如前所述，本例中，訊號保持要件BD亦係各調光元件MU之一部分。其結果，於二維調光元件VM1上之各調光元件MU，根據保持於各調光元件MU内之訊號保持要 # 件BD之各調光訊號，形成調光分布。又，本發明之二維調光元件VM 1之特徵係不僅能在調光元件陣列1 1上形成既定之二維調光形狀分布，且能在保持其形狀的狀態下，在既定方向（X方向）移動。亦即，由於本發明在各調光元件MU内之訊號保持要件BD及對此供應訊號之供應機構，採用CCD(上述XCCD(XC))，故能易於實現此移動。亦即，藉由XCCD(XC)之上述驅動，能容易的將保持 _ 於XCCD (XC)上二維排列之訊號保持要件BD上之調光訊號’移動至於+ X方向相鄰接之訊號保持元件BD上。此外，藉此亦能容易的使形成於調光元件陣列11上之既定二維調光形狀分布往+ X方向移動。再者，當驅動此 XCCD(XC)之際，當然能對排歹4於XCCD(XC)左端之電荷耦合要件CU0等中之訊號保持要件BD，經由YCCD(LC) 供應二維調光資料SD上之新調光訊號。又，欲在所有訊號保持要件BD上保持既定調光訊號 31 謦 200540457 之狀態下驅動XCCD(XC)，必須用某種方法來除去保持於 XCCD(XC)右端所形成之訊號保持要件bD(第2圖中，對應各Y轉送路徑D3〜D5上第2相X轉送電極B5之正下方）上之訊號。因此’訊號處理系統121係與上述XCCD(XC)之轉送動作同步，對右YCCD(RC)之第2相γ轉送電極κι〜^ 施加正電位，將保持於XCCD(XC)右端之訊號保持要件bd 上之電荷除去至右YCCD(RC)中。並驅動右ycCD(rc)，將此等電荷依序移動至右轉送路徑DR中之排出端DRE。於排出端DRE連接有未圖示之接地線，藉由此接地線將上述電荷回收至訊號處理系統121。第5(B)圖係顯示形成於調光元件陣列1 1上之調光狀恶分布VD1例的圖。如前所述，調光元件陣列丨丨中之調光元件MU之X方向排列數為q列（從B1到Bq)，γ方向排列數為η歹蚁從D1到Dn)。調光狀態分布VDi中之白或黑表示，係對應二維調光資料SD，各調光要件49往既定方向之反射率，例如，在白的部分較高，黑的部分較低。凋光狀悲分布VD 1，係表示將對應調光資料（係第5(A)Here, the two-dimensional dimming data SD in the Y-direction arrangement number η is the number of arrangement in the Y-direction on the dimming element MU on the dimming element array 11 (that is, the number of arrangement with XCCD (XC) The number of rows in the Υ direction of the charge-coupling element CU is the same) The number of arrangements in the X-direction m is greater than the number of the X-direction arrangement of the light-control element MU (that is, the same as the number of the X-direction arrangement of the charge-coupling element CU). . 29 200540457 When the above-mentioned dimming distribution is formed, the signal processing system ΐ2ι is first transferred to the left γ transfer electrodes F1 ~ F5, G1 ~ G5, F1 ~ F5 'of the left YCCD (LD) through the Y transfer signal lines Q1 ~ Q3. Started supply of the above 3-phase γ clock signals. Then, the signal processing system 121 arranges the dimming data in the two-dimensional dimming data sd side by side in the row X1 (located at the right end position in the x direction) according to the order of the Υ direction positions Υ1, Υ2, Υ3, ... γη, Synchronized with 1 cycle of the above-mentioned change of the γ clock signal, one by one is sequentially supplied to the left YCCD (LC) input section dol as a dimming signal through the signal line si. At this time, the dimming signal reached to the input portion D0L, for example, if the signal in the two-dimensional dimming data SD is 0, it is regarded as a signal composed of the 0 potential, and if it is 1, it is constituted as a negative potential. Signal. The signal processing system 121 repeats the above-mentioned signal transfer for m cycles, and supplies all the dimming data side-by-side X1 on the two-dimensional signal SD to the left YCCD (LC), and drives the xCCD, as described above, and will remain at the left yccd ( lc) The dimming signal is forwarded to the signal holding element BD in the charge surface element CU0 etc. which is lined up at the left end of the XCCD (XC). Second, the signal processing system 121 supplies the dimming data in the two-dimensional dimming data SD side by side on the row X2 in the same manner as described above, and sequentially supplies the dimming data to the input section DOL as a dimming signal. After repeating this cycle, the signal processing system 121 drives the XCCD (XC), and then keeps the signal holding element BD in the charge coupling element CU in the row j on the left end of the XCCD (XC), etc. Column, transfer to the signal holding requirement BD in each of the charge coupling requirements adjacent in the + x direction, and transfer the new signal column held on YCCD (LC) to the charge coupling coupled to the left end of XCCD (XC) in a row Requires 30 200540457 * CU0 and other signals to maintain the requirement BD. If the X-direction of each charge-coupling element CU of XCCD (XC) is arranged as q columns, then a series of actions including the above-mentioned XCCD (XC) drive are repeated q times to complete each charge-coupling element of XCCD (XC) All the signals in the CU maintain the supply of the predetermined two-dimensional dimming data SD of the BD. In addition, as described above, in this example, the signal maintaining element BD is also a part of each dimming element MU. As a result, the dimming elements MU on the two-dimensional dimming element VM1 form a dimming distribution according to the dimming signals of the signal holding requirements # BD held in each dimming element MU. In addition, the feature of the two-dimensional dimming element VM 1 of the present invention is that it can not only form a predetermined two-dimensional dimming shape distribution on the dimming element array 11, but also maintain the shape in a predetermined direction (X Direction). That is, since the signal holding requirement BD in each light-adjusting element MU of the present invention and the supply mechanism for this supply signal use a CCD (the above-mentioned XCCD (XC)), this movement can be easily realized. That is, by the above-mentioned driving of XCCD (XC), it is possible to easily move the dimming signal 'on the signal holding requirement BD which is two-dimensionally arranged on XCCD (XC) to the signal adjacent to + X direction. Element BD. In addition, it is possible to easily move a predetermined two-dimensional dimming shape distribution formed on the dimming element array 11 in the + X direction. In addition, when driving this XCCD (XC), it is of course possible to maintain the requirement BD of the signal in the charge-coupled requirement CU0 at the left end of XCCD (XC), and to supply the two-dimensional dimming data SD via YCCD (LC). The new dimming signal. To drive the XCCD (XC) with the predetermined dimming signal 31 謦 200540457 on all the signal holding requirements BD, it is necessary to remove the signal holding requirements bD formed on the right end of the XCCD (XC) by some method. In Fig. 2, it corresponds to the signals on the Y-phase transfer paths D3 to D5 (directly below the second-phase X-transfer electrode B5). Therefore, the 'signal processing system 121' is synchronized with the above-mentioned XCCD (XC) transfer operation, and a positive potential is applied to the second phase γ transfer electrode κι ~ ^ of the right YCCD (RC), which will hold the signal holding requirements at the right end of the XCCD (XC) The charge on bd is removed to the right YCCD (RC). And drive the right ycCD (rc) to sequentially move these charges to the discharge end DRE in the right transfer path DR. A ground line (not shown) is connected to the discharge terminal DRE, and the above charges are recovered to the signal processing system 121 through the ground line. Fig. 5 (B) is a diagram showing an example of a dimming-like evil distribution VD1 formed on the dimming element array 11. As mentioned before, the number of arrangement of the dimming element MU in the dimming element array 丨 in the X direction is q columns (from B1 to Bq), and the number of arrangement in the γ direction is η (from D1 to Dn). White or black in the dimming state distribution VDi indicates that it corresponds to the two-dimensional dimming data SD. The reflectance of each dimming element 49 in a predetermined direction, for example, the white part is higher and the black part is lower. The dimmed sadness distribution VD 1 indicates that it will correspond to the dimming data (No. 5 (A)

圖所不之二維調光資料SD中、排列於以列χ]·為中心之X 方向之覓度q列上者）之調光分佈，以調光元件陣列11之 X方向中心的列Be為中心所形成的狀態。於調光元件陣列11上之各調光元件MU，對應二維調光資料sd上該部分之調光資料之調光狀態，係保持χ方向及γ方向之排列而形成。 32 200540457 另一方面’第5(C)圖係顯示從第5(B)圖所示之狀態，進灯3周期XCCD(XC)之上述驅動後之調光元件陣列丨〗上之凋光狀態分布VD2的圖。亦即，調光元件陣列丨丨上之凋光狀怨分布VD2與第5(B)圖所示之調光狀態分布vm 相較，係在+ X方向移動3元件份。又，於調光it件陣列 η之左側3列，形成根據第5(A)圖中之二維調光資料（§ 的新調光分布。In the two-dimensional dimming data SD shown in the figure, the dimming distribution is arranged on the q direction of the X direction centered on the column χ] ·), and the column Be is the center of the X direction of the dimming element array 11 The state formed by the center. Each of the dimming elements MU on the dimming element array 11 corresponds to the dimming state of the dimming data of the part on the two-dimensional dimming data sd, and is formed by maintaining the arrangement of the χ direction and the γ direction. 32 200540457 On the other hand, picture 5 (C) shows the state of dimming on the dimming element array after driving the XCCD (XC) as described above from the state shown in picture 5 (B). Graph of distribution VD2. That is, compared with the dimming state distribution vm shown in FIG. 5 (B), the withered distribution VD2 on the dimming element array 丨 is moved by 3 elements in the + X direction. In addition, in the three columns to the left of the dimming it element array η, a new dimming profile according to the two-dimensional dimming data (§) in Fig. 5 (A) is formed.

▲戈卩Μ上所迤，本發明之二维調光元件vmi中，不僅負在周光7C件陣列丨丨上形成既定之二維調光狀態分布，』能在保持該形狀的狀態下，將此往㈣方向（χ方向）移動此外，上述例中，雖僅顯示將調光元件陣列1 1上之气光分布往+ χ方向移動之例，但當“能往-X方向移動°。此係經由纟YCCD(RC)，將調光訊號供應至XCCD⑽中 ::;之電編要件⑶列，來變更X時鐘訊號之相變化 ==將XCCD(XC)之電荷（調光訊號）之轉送方向設為-）方向來加以實現。又’保持在此情形之XCCDryr、击ι 件BD上之電荷，可在排出二(xc)中左端之訊號保持要 ^ ^工YCCD(Lc)中後，從左轉迗路徑DL中之排出端Dle，訊號處理系統m即可。#由未圖-之接地線回收至又’本發明之二維纲忠僅兩& 4 1 °° M1，依照其用途，有時 …周先分佈往單方向移動即可備左YCCD(LC)與右Ycc 不/貝通h、應至XCCD(XC)側之單—者 4備將調光訊號供 33 .200540457 又，上述貝施形悲中，作為訊號轉送機構之XCcd(xc) 與訊號供應機構之左右的左YCCD(LC)及右YCCD(RC)，係由電荷搞合元件（CCD)所構成，但其實施手段並不限定於此，亦能使用其他元件，例如磁泡記憶體等，將保持於既定記憶要件之資訊轉送至沿既定方向相鄰接之其他記憶要件者。▲ As mentioned above, the two-dimensional dimming element vmi of the present invention not only forms a predetermined two-dimensional dimming state distribution on the Zhouguang 7C array 丨丨, but can maintain the shape. This is shifted in the ㈣ direction (χ direction). In the above example, although only the example of moving the gas-light distribution on the dimming element array 11 to the + χ direction is shown, when "can be moved in the -X direction by °". This is to supply the dimming signal to XCCD through 纟 YCCD (RC) ::; Electrically edited element Column 3 to change the phase change of X clock signal == the charge of XCCD (XC) (dimming signal) The transfer direction is set to the-) direction to achieve this. Also, the charge on the XCCDryr and the BD held in this situation can be maintained after the signal at the left end of the discharge second (xc) is required to be in the YCCD (Lc). Turn left from the discharge end Dle in the path DL and the signal processing system m. #Recycled from the ground wire not shown in the figure to the 'two-dimensional outline of the present invention is only two & 4 1 ° ° M1, according to For its use, sometimes ... Zhou Xian distribution moves in one direction to prepare the left YCCD (LC) and right Ycc not / Betone h, the order should be to the XCCD (XC) side The 4 prepares the dimming signal for 33.200540457. In the above-mentioned beacon, the XCcd (xc) as the signal transmission mechanism and the left YCCD (LC) and right YCCD (RC) of the signal supply mechanism are caused by It is composed of a charge coupling element (CCD), but its implementation method is not limited to this. Other elements, such as magnetic bubble memory, can also be used to transfer the information maintained in a predetermined memory element to an adjacent one in a predetermined direction. Other memory requirements.

例如，使用磁泡記憶體之情形時，為讀取保持於磁泡記憶體中之訊號，設於調變要件49中之訊號讀取機構，亦可使用磁性體接頭及線圈等，來取代上述連接頭48與場效型電晶體之控制電晶體43。其次，參照第6圖，說明本發明曝光裝置之第i實施形態及本發明曝光方法之第1實施形態。本實施形態之曝光裝置’係對由本發明二維調光元件 VM1上之上述反射型調光元件陣列u中之微小反射鏡心所構成的反射® 10照射照明幻L2’透過投影光學系統Η 字-反射光IL3曝光至被曝光基板w上的曝光裝置，係所謂的掃描型無光罩曝光裝置。攸準分子雷射或高次諧波轉換型雷射等雷射、水銀趋或發光二極體等光源1所發出之照明光ILG，係經由整开光學系統(2, 3)射入偏向元件乜。偏向元件^例如係繞务光柵等光學元件’視需要將射入之照明光Μ偏向既定方向、或在分割光束後將各光束偏向射出。從偏向元件4a射出之照明光IU，經由中繼透鏡6射入複眼透鏡等之光學積分器7,從光學積分器7射出之照 34 200540457 明光經由中繼透鏡8射入分束哭9，於今八室I i Λ ^ σσ y °茨刀割面9a反射成為照明光IL2，照射至作為可轡成形央1 — 口」艾风〜尤罩之一維調光元件 VM1上之反射型調光元件陣列n之反鼾干力1 1 I反射面丨〇。此反射面 10’係上述調光元件MU中之微小反射鏡1〇a二維排列者。各微小反射鏡10a之反射面大小，例如係從5到左右之方型。被調光元件陣列η調光之照明光IL3,透射過分束器 9之分割面9a以投影光學系統13加以聚光，照射至半^ 體晶圓或玻璃I板等被曝光基才反WJl。此日夺，在被曝光基板w上，對應上述所欲圖案形狀所形成之調光元件陣列二上之調光分布之明暗分布，即形成對應所欲圖案形狀之像’將此曝光。各微小透鏡1〇a之反射面之面向，係根據從形狀訊號處理系統2 1通過訊號線Sig傳達至控制電路機構12之形狀訊號來決定。此時，若微小反射鏡i〇a之法線方向與z 軸平仃的言舌’由於照明& IL2係被該微小反射@…反射至+z方向，因此經由分束器9及投影光學系統13，投影至被曝光基板w上。 J w 杜倣小反射鏡1 〇a之反射面傾斜、其^ 方向偏離z軸之情形時，照日月光IL2即被該微小反射鏡反射至z方向，亦即，反射至與投影光學系統〗3之^ 方向相異之方向，不射入投影光學系統13、或被右光學系統13未圖示之孔徑光闌等遮蔽，而不會光基板W上。 35 謦 200540457 據此’在被曝光基板w上形成對應包含調光元件陣列 I 1上之微小反射鏡1 〇a之各調光元件MU之調變狀態的照明強度分布，此如明強度分布被曝光至被曝光基板w上。被曝光基板W上所形成之像的分解能力，係由構成調光元件陣列11之調光要件49中所含之微小反射鏡1〇a的大小、與投影光學系統13之縮小倍率及其解析度來決定。設微小反射鏡10a之大小為20/zm方型、投影光學系統13 之縮小倍率為1/100倍時，被曝光基板w上所形成之像之分解能力，係期待為上述反射鏡間矩（大致2個大小）之 4〇 # m乘上縮小倍率的4〇〇nm。惟此值亦受投影光學系统之數值孔徑（NA)、及光源波長之限制。亦即，當光源之波長為；I時’投影光學系統之解析度大致係以又々A來決定’因此，為了在被曝光基板w上得到上述4〇〇_之解析度’必須使用短波長之光源與大财之投影光學系統。例如，使m 193nm之㈣準分子㈣來作為光源之十月形時’藉由具有〇.48左右以上數值孔徑之投影光統:即能達成上述解析度。但是，調光元件陣列"上二。周光7L件MU之排列間距與投影光學系統^ 必設為相等，無論哪個㈣形日^法使Γ變成形光罩之曝光裝置’亦能適用所謂變 ^ /亦即，糟變更照明光射入調光元件陣列丨丨之射入角度特性，能提高投影光學系統13之實質解析度。之列u因二光裝置為了能變更照射至調光元件陣月先江2之射入角度特性，係將上述偏光元件 36 200540457 4a ’例如係以旋轉方式配置能交換之複數個，、目/ 被曝光基板之圖案形狀等，將旋轉構件？待曝光於數個偏向元件4…中選擇最佳的偏向元：旋從複其裝填在照明光用氺敗，栋” 43等’將者。用7"路使&明先具有所欲之偏向特性藉由偏向元件4a之交換，從偏向元件4a射出明二偏向特性即能變化，而使射入光學積分器7:昭月先1之光量分布產生變更。在光學積分器 :、、大致形成保持此光量分布之光量分布，照明據此光量分布之角度特性’照射至調光元件具:根實現環形照明等之變形照明。 1，猎以 *又’變形照明係將照明光IL2分割成複數個部又更各。卩分光束射入調光元件陣列1丨，交更射人作為照.明光IL2全體之調光元件陣列以射入角度。此與使用光罩之曝光裝置之變形照明相同。相對於被曝光基板W例如為直徑鳩mm左右之體晶圓，投影光學系統以曝光視野一般係遠窄於此。因此’為了在被曝光基板w之整個表面曝光出所欲圖宰，必須在曝光中移動被曝光基w。因此，係將被曝光基板 W4載於基板載台14，藉由未圖示之驅動機構而能在定盤 17上、於圖中x方向及γ方向移動。此外，其位置係透過設於基板載台14上之移動鏡15之位置，使用雷射干涉器16來加以測量’傳達至載台控制系統18。又’第1圖中雖僅顯示用來測量基板載台14之又方 37 200540457 向位置之移動鏡15及雷射干涉器16，但當然亦設置用來測里Y方向位置之移動鏡及雷射干涉器。 “以下，針對本實施形態之曝光裝置及曝光方法之被曝光基板W之曝光動作加以說明。本實施形態之曝光裝置及曝光方法係對投影光學系統丨3及二維調光元件丨等，邊相對掃描被曝光基板w、一邊進行對被曝光基板w之曝光。百先’藉由未圖示之基板搬送機構將被曝光基板W裝載於基板載台14上。並視需要在被曝光基板w上，以位置對準頒微鏡1 9來測量現有之電路圖案位置。人，主控制系統20透過基板載台控制系統1 8使基板載台14移動至曝光準備位置。此曝光準備位置，係根據待曝光於被曝光基板.W上之圖案位置資訊、與使用上述位置對準顯微鏡所測量之現有電路圖案位置，由主控制系統20來決定。其次，主控制系統20對基板載台控制系統1 8發出指令，使基板載台14以大致一定速度掃描於一 X方向。此時，基板載台14之X方向及Y方向之位置係使用雷射干涉哭 1 6等來測量，透過基板載台控制系統1 8傳達至主控制系統20。又，主控制系統20及基板載台控制系統1 8根據此所測量之位置資訊，保持既定速度使基板載台14掃描於 ~ X方向。另一方面，主控制系統20對形狀訊號處理系統2 出指令，將形狀訊號（係與形狀訊號處理系統2 1 φ - ^ τ所屺憶 38 200540457 .之待曝光至被曝光基板w ±之圖案形狀相關的形狀訊號）轉运至可變成形光罩VM1。形狀訊號被轉送至可變成形光罩VM1中之控制電路機構12，藉由上述可變成形光罩（本發明之二維調光元件）VM1之功能，在調光元件陣列1 1上，形成調光分布（係對應待曝光在被曝光基板w上之圖案形狀）。又由於上述被曝光基板W係以大致一定速度掃描於一 X方向，故為了將形成於調光元件陣列丨丨上之調光分 •布，以既定位置關係曝光至被曝光基板w上，該調光分布亦必須掃描於+ X方向。此處，x方向之符號之所以反轉，係假設以形成一般倒立像之光學系統來作為投影光學系統 1 3之故。本發明之二維調光元件VM1中，如上所述，由於藉由 xccd(xc)之驅動，具有將形成於調光元件陣列η上之調光分布移動至+ X方向的功能，故能易於實現。此外，主控制系統20係透過形狀訊號處理系統2丨，傳送指令至二 _維言周光元# VM1，冑形成於調光元件陣歹,J n上之上述調光分布透過投影光學系統1 3，一邊保持被曝光基板w與成像關係、一邊移動至+ X方向。又，在上述調光分布往X方向移動之際，如上所述，必須視該移動，在調光元件陣列丨丨之x方向的一端，依序形成對應新圖案之調光分布。因此，可變成形光罩VM J 中之控制電路機構12中之上述訊號處理系統121，係如前述般，透過YCCD(LC、RC)對XCCD(XC)上排列於χ方向 39 200540457For example, in the case of using the magnetic bubble memory, in order to read the signal held in the magnetic bubble memory, the signal reading mechanism provided in the modulation element 49 may also use a magnetic connector and coil instead of the above. The connector 48 is connected to a control transistor 43 of a field effect transistor. Next, referring to Fig. 6, the i-th embodiment of the exposure apparatus of the present invention and the first embodiment of the exposure method of the present invention will be described. The exposure device of this embodiment 'is a reflection of a reflection formed by the micro-mirror cores in the above-mentioned reflective dimming element array u on the two-dimensional dimming element VM1 of the present invention. 10 Illumination Magic L2' is transmitted through a projection optical system. -The exposure device that exposes the reflected light IL3 to the exposed substrate w is a so-called scanning maskless exposure device. Illumination light ILG emitted from light source 1 such as excimer laser or harmonic conversion laser, mercury trend or light emitting diode 1 is incident on the deflection element through the open optical system (2, 3) Alas. The deflection element ^ is an optical element such as a grating or the like, as required, the incident illumination light M is deflected to a predetermined direction, or each light beam is deflected and emitted after being divided. The illuminating light IU emitted from the deflection element 4a enters the optical integrator 7 such as a fly-eye lens through the relay lens 6, and the photo 34 emitted from the optical integrator 7 200540457 The bright light enters the beam splitting 9 through the relay lens 8. The eight-room I i Λ ^ σσ y ° The cutting surface 9a is reflected as the illumination light IL2, and is irradiated to the reflection-type light control element on the one-dimensional light control element VM1, which is a formable center 1—port. The opposite force of the array n is 1 1 I reflecting surface. The reflecting surface 10 'is a two-dimensional array of the minute mirrors 10a in the above-mentioned dimming element MU. The size of the reflecting surface of each minute mirror 10a is, for example, a square shape from 5 to the right. Illumination light IL3, which is dimmed by the dimming element array η, is transmitted through the dividing surface 9a of the beam splitter 9 to be condensed by the projection optical system 13 and irradiated to the exposed substrate such as a half wafer or a glass I-plate to reflect WJ1. On this day, on the exposed substrate w, the light-dark distribution of the dimming distribution on the dimming element array 2 formed according to the desired pattern shape described above, that is, an image corresponding to the desired pattern shape is formed 'and exposed. The face of the reflecting surface of each micro lens 10a is determined based on the shape signal transmitted from the shape signal processing system 21 to the control circuit mechanism 12 through the signal line Sig. At this time, if the normal direction of the micro-mirror i〇a is flat with the z-axis, the illumination & IL2 is reflected by the micro-reflection @ ... to the + z direction, so it passes through the beam splitter 9 and the projection optics. System 13 projects onto the exposed substrate w. When the reflecting surface of J w Du imitating small mirror 1 〇a is inclined and its ^ direction deviates from the z-axis, the sun and moon light IL2 is reflected by the tiny mirror to the z direction, that is, reflected to the projection optical system. 3 Directions with different directions are not incident on the projection optical system 13 or are blocked by the aperture stop or the like not shown in the right optical system 13, and are not on the light substrate W. 35 謦 200540457 Based on this, an illumination intensity distribution corresponding to the modulation state of each light adjustment element MU including the micro-mirror 10a on the light adjustment element array I1 is formed on the exposed substrate w. Exposure to the exposed substrate w. The resolution of the image formed on the exposed substrate W is determined by the size of the micro-mirror 10a included in the dimming element 49 constituting the dimming element array 11, the reduction magnification of the projection optical system 13, and its analysis. Degree to decide. When the size of the micro-mirror 10a is 20 / zm square and the reduction ratio of the projection optical system 13 is 1/100 times, the resolution of the image formed on the exposed substrate w is expected to be the above-mentioned mirror moment ( Approximately 2 sizes) of 40 # m times 400nm of reduction magnification. However, this value is also limited by the numerical aperture (NA) of the projection optical system and the wavelength of the light source. That is, when the wavelength of the light source is I, 'the resolution of the projection optical system is roughly determined by 々A'. Therefore, in order to obtain the above-mentioned resolution of 400_ on the exposed substrate w, a short wavelength must be used. Light source and big fortune optical system. For example, when the "excimer" of m 193nm is used as the october shape of the light source ', the above-mentioned resolution can be achieved by a projection light system having a numerical aperture of about 0.48 or more. However, the array of dimming elements "top two". The arrangement distance of the 7M MU of Zhouguang and the projection optical system ^ must be set to be equal. No matter which 日 -shaped sun ^ method makes Γ into a reticle-shaped exposure device, it can also apply the so-called change ^ / that is, change the illumination light. The incident angle characteristics of the dimming element array 丨丨 can improve the substantial resolution of the projection optical system 13. In order to change the incident angle characteristics of the two-light device that irradiates the dimming element array Xianyuejiang 2, the above-mentioned polarizing element 36 200540457 4a is arranged in a rotating manner, for example. Will the pattern shape of the exposed substrate be rotated? To be exposed to a number of deflection elements 4 ... choose the best deflection element: turn it to fill the lighting light and use it to defeat, "43" and so on. Use 7 " Road & The deflection characteristic can be changed by exchanging the deflection element 4a, and the deflection characteristic of the Mingji can be changed from the deflection element 4a, so that the light quantity distribution incident on the optical integrator 7: Zhaoyue first 1 is changed. In the optical integrator: ,, and roughly The light quantity distribution that maintains this light quantity distribution is formed, and the angular characteristics of the light quantity distribution are used to illuminate the dimming element: the circular illumination is used to realize the deformed lighting. 1. The “* '” deformation lighting system divides the illumination light IL2 into The multiple parts are more each. The sub-beam is incident on the dimming element array 1 丨 and is transmitted as a photo. The entire dimming element array of bright light IL2 is incident at an angle. This is the same as the deformation illumination of the exposure device using a photomask. Same as for the exposed substrate W, for example, a body wafer with a diameter of about 10,000 mm, the projection optical system generally has a narrower exposure field than this. Therefore, 'in order to expose the desired surface on the entire surface of the exposed substrate w, It is necessary to move the exposed substrate w during the exposure. Therefore, the exposed substrate W4 is placed on the substrate stage 14 and can be moved on the fixed plate 17 in the x direction and the γ direction by a driving mechanism (not shown). In addition, the position is measured through the position of the moving mirror 15 provided on the substrate stage 14 using the laser interferometer 16 to be transmitted to the stage control system 18. Also, although shown in the first figure, The moving mirror 15 and laser interferometer 16 for measuring the position of the substrate stage 14 20052005457. However, of course, a moving mirror and laser interferometer for measuring the position in the Y direction are also provided. "Hereinafter, for this embodiment The exposure operation of the exposed substrate W by the exposure apparatus and the exposure method will be described. The exposure apparatus and exposure method of this embodiment are to expose the exposed substrate w while scanning the exposed substrate w relative to the projection optical system 3 and the two-dimensional dimming element 丨 and the like. Baixian 'mounts the exposed substrate W on the substrate stage 14 by a substrate transfer mechanism (not shown). And if necessary, the micro-mirror 19 is aligned on the exposed substrate w to measure the position of the existing circuit pattern. The main control system 20 moves the substrate stage 14 to the exposure preparation position through the substrate stage control system 18. This exposure preparation position is determined by the main control system 20 based on the pattern position information to be exposed on the substrate to be exposed, and the existing circuit pattern position measured using the above-mentioned position alignment microscope. Next, the main control system 20 issues an instruction to the substrate stage control system 18 to cause the substrate stage 14 to scan in an X direction at a substantially constant speed. At this time, the positions in the X direction and the Y direction of the substrate stage 14 are measured using a laser interference cry 16 or the like, and transmitted to the main control system 20 through the substrate stage control system 18. In addition, the main control system 20 and the substrate stage control system 18 maintain the predetermined speed and scan the substrate stage 14 in the ~ X direction based on the measured position information. On the other hand, the main control system 20 issues an instruction to the shape signal processing system 2 to send the shape signal (which is related to the shape signal processing system 2 1 φ-^ τ to the memory 38 200540457. The pattern to be exposed to the exposed substrate w ± Shape-dependent shape signal) is transferred to the variable shape mask VM1. The shape signal is transferred to the control circuit mechanism 12 in the variable shape photomask VM1, and the function of the variable shape photomask (the two-dimensional light control element of the present invention) VM1 is formed on the light control element array 11 to form Dimming distribution (corresponding to the shape of the pattern to be exposed on the exposed substrate w). Since the above-mentioned exposed substrate W is scanned in an X direction at a substantially constant speed, in order to expose the dimming and distribution formed on the dimming element array 丨丨 to the exposed substrate w in a predetermined position relationship, the The dimming profile must also be scanned in the + X direction. Here, the reason why the sign in the x direction is reversed is that an optical system forming a general inverted image is assumed as the projection optical system 1 3. In the two-dimensional dimming element VM1 of the present invention, as described above, since it is driven by xccd (xc), it has the function of moving the dimming distribution formed on the dimming element array η to the + X direction, so it can be easily achieve. In addition, the main control system 20 transmits a command to the two-dimensional word processing unit # VM1 through the shape signal processing system 2 ′, which is formed on the dimming element array 歹, and the above-mentioned dimming distribution on the j n passes through the projection optical system 1 3, While maintaining the relationship between the exposed substrate w and the imaging, it moves to the + X direction. When the dimming distribution is moved in the X direction, as described above, the dimming distribution corresponding to the new pattern must be sequentially formed at one end in the x direction of the dimming element array 丨 depending on the movement. Therefore, the above-mentioned signal processing system 121 in the control circuit mechanism 12 in the variable shape mask VM J is arranged on the XCCD (XC) in the χ direction through the YCCD (LC, RC) as described above. 39 200540457

端之訊號保持要件R ^ D I、應新的調光訊號。又，形狀訊號 " 視而要將對應新圖案之形狀訊號供應至控制電路機構12中之訊號處理系統121。The end signal keeps the requirement R ^ D I and should be the new dimming signal. The shape signal " optionally supplies the shape signal corresponding to the new pattern to the signal processing system 121 in the control circuit mechanism 12.

、又，若投影光學系統13係形成正立像之光學系統時，被曝光基板w之掃描方向與調光元件丨丨上之調光分布之掃描方向有時亦會是相同符號，㈣，若係折反射光學系 ▲:被曝光基板w t掃描方向與調光元件陣歹4 11上之調，分布之掃描方向亦有不是平行的情形。此種情形下，亦疋適當變更二維調光元件VMl之設置方向或基板載台Μ 之設置方向’當然亦是和上述同樣的，使基板載台“之掃描方向，亦即使被曝光基板w之掃描方向透過調光元件陣列11上之調光分布之掃描方向(第1方向），與投影在被曝光基板W上之方向一致即可。 ^主控制系統20,根據雷射干涉器16等所測量之位置資訊，在基板載台14到達既定位置之階段，對光源發出心光私令。其結果，開始從光源i發出照明光江〇，將照明光IL2照射至調光元件陣列11±。又，具有對應所欲= 案形狀之調光方布的反射光IL3，透過投影光學系統丨3照射至被曝光基板W上，在被曝光基板w上曝光出上述= 欲形狀之圖案。又’主控制系統20，在基板載台14到達其他既定位置時’即對光源1發出發光中止指令，來中斷曝光。之後，將基板載台14驅動於Y方向、或進一步驅動於χ方向使其移動至另一曝光準備位置，重複上述曝光動作，對被曝 40 200540457 光基板w上之必要部分進行曝光。據此，完成被曝光基板w之曝光動作。然後，藉由未圖不之基板搬送機構，從基板載台14除去被曝光基板w，將其搬出至曝光裝置外。又在持績進行其他被曝光基板（未圖示）之曝光時，則係藉由基板搬送機構，將其他被曝光基板裝載在基板載台14上，重複與上述相同之曝光動作。又，上述各掃描曝光雖然亦能常時在同一方向（例如+ X方向）一邊掃描基板載台14、一邊進行，但一般而言，一邊交互在+ X方向及一X方向進行掃描、一邊進行:光之方式，能提高處理能力。本發明曝光裝置中作為可變成形光罩之二維調光元件 VM1，如上所述，能將形成於調光元件陣列u上之調光分布移動至+ X方向與—X方向的兩方，故能易於實現一邊父互變更掃描方向、一邊進行之掃描曝光。又，習知之可變成形光例如亦係、由能旋轉之微小反射鏡二維排列之反射鏡陣列所構成。且各微小反射鏡之旋轉角度’係根據電氣訊號（分別對應形成之電容器或記憶元件等儲存元件中所保持者）來決定。然而，習知之可變成形光罩並沒有本發明特徵之訊號轉送機構。因此’無法記憶元件（對應上述各微小反射鏡）中所儲存之訊號，在保持其二維分布形狀的狀態下，轉送至各鄰接之記憶元件。因此，即使是將反射鏡陣列上之調光分布 41 200540457 往向稍u私動之情形時，亦必須於構成反射鏡陣列之所有微小反射鏡所對應之所有記憶元件中，再度寫入所有訊號。因&，習知之可變成形光罩，反射鏡陣列上之調光分布之移動所需時間較長’而使得曝光裝置之處理能力亦受限制。另一方面，纟發明之曝光裝i，能藉由訊號轉送機構 (XCCD(XC))，將保持於：維排列於xccd上之訊號保持要件BD之调光訊號高速往χ方向移動，藉此，能將形成於調光元件陣列11上之調光分布往X方向高速移動。因此，調光元件陣列U上之調光分布之移動所需時間短，而能大幅提高作為曝光裝置之處理能力。 .又，上述二維調光元件VM1，對排列於訊號轉送機構 (XCCD(XC))中X方向端部之訊號保持元件BD之一列供應調光訊號的訊號供應機構係左右之YCCD(LC，RC)，對 YCCD(LC，RC)供應調光訊號則係透過訊號線S1或以串列方式供應。但是，亦可由多數條訊號線（連接訊號處理系統121、與排列於XCCD(XC)中左右方向端部之各訊號保持要件BD)來構成訊號供應機構，以平行方式（並列）對上述訊號保持要件BD之一列供應調光訊號。藉此，冑t更進一步的加速訊號對XCCD(XC)之供應，更為縮短移動調光元件陣列1 1上之調光分布所需時間，進而再提高曝光裝置之處理能力。Also, if the projection optical system 13 is an optical system forming an erect image, the scanning direction of the exposed substrate w and the scanning direction of the dimming distribution on the dimming element 丨丨 may sometimes have the same sign. ㈣, if the Reflective optical system ▲: The scanning direction of the exposed substrate wt and the adjustment on the dimming element array 4 11 may not be parallel to the scanning direction of the distribution. In this case, it is also necessary to appropriately change the setting direction of the two-dimensional dimming element VM1 or the setting direction of the substrate stage M. Of course, it is also the same as the above, so that the scanning direction of the substrate stage ", even if the substrate w is exposed. The scanning direction of the dimming distribution on the dimming element array 11 (the first direction) may be the same as the direction projected on the exposed substrate W. ^ The main control system 20, according to the laser interferometer 16, etc. The measured position information is sent to the light source at the stage where the substrate stage 14 reaches the predetermined position. As a result, the light source i is emitted from the light source i, and the illumination light IL2 is irradiated to the dimming element array 11 ±. In addition, the reflected light IL3 of the light-adjusting square cloth corresponding to the desired shape is irradiated onto the exposed substrate W through the projection optical system 3, and the pattern of the above-mentioned = desired shape is exposed on the exposed substrate w. The main control system 20 interrupts the exposure when the substrate stage 14 reaches another predetermined position, that is, the light source 1 is instructed to stop the light emission. Then, the substrate stage 14 is driven in the Y direction or further in the χ direction. Move it to another exposure preparation position, repeat the above-mentioned exposure operation, and expose the necessary portion of the exposed substrate 40 200540457. Based on this, the exposure operation of the exposed substrate w is completed. Then, the substrate is not shown. The transfer mechanism removes the exposed substrate w from the substrate stage 14 and carries it out of the exposure device. When performing exposure on other exposed substrates (not shown), the substrate transfer mechanism is used to transfer the other substrates. The exposed substrate is mounted on the substrate stage 14 and the same exposure operation as described above is repeated. Although each of the scanning exposures described above can be performed while scanning the substrate stage 14 in the same direction (for example, + X direction), it is generally performed. In other words, while scanning in the + X direction and the X direction alternately, the scanning is performed in a light mode, which can improve the processing capacity. The two-dimensional dimming element VM1 in the exposure device of the present invention, which is a variable shape mask, is as described above. , The dimming distribution formed on the dimming element array u can be moved to both the + X direction and the −X direction, so it is easy to realize that the scanning direction, Scanning exposure performed on one side. Also, the conventional variable shaped light is, for example, a mirror array formed by a two-dimensional array of micro mirrors that can rotate. The rotation angle of each micro mirror is based on electrical signals (respectively It is determined according to the storage element such as the formed capacitor or memory element. However, the conventional variable-shaped photomask does not have the signal transmission mechanism of the feature of the present invention. Therefore, it is not possible to memorize the element (corresponding to each of the aforementioned micro mirrors) The signals stored in the medium are transferred to each adjacent memory element while maintaining its two-dimensional distribution shape. Therefore, even when the dimming distribution on the mirror array is shifted to a slightly u-direction, It is also necessary to write all signals again in all the memory elements corresponding to all the tiny mirrors constituting the mirror array. &Amp;, the conventional variable shaped mask, the time required for the movement of the dimming distribution on the mirror array is longer ', so that the processing capacity of the exposure device is also limited. On the other hand, the exposure device i invented by the signal transfer mechanism (XCCD (XC)) can keep the dimming signal of the signal maintaining element BD arranged on the xccd at high speed in the χ direction, thereby , Can move the dimming distribution formed on the dimming element array 11 to the X direction at high speed. Therefore, the time required to move the dimming distribution on the dimming element array U is short, and the processing capacity as an exposure device can be greatly improved. In addition, the above-mentioned two-dimensional dimming element VM1 is a YCCD (LC, LC RC). The supply of dimming signals to YCCD (LC, RC) is supplied through the signal line S1 or in series. However, a plurality of signal lines (connecting to the signal processing system 121 and the signal holding requirements BD arranged at the left and right end portions in the XCCD (XC)) may be used to form a signal supply mechanism, and the above signals are held in parallel (parallel). Dimming signals are supplied to one of the requirements BD. As a result, 胄 t further accelerates the supply of XCCD (XC) signals, further shortens the time required for the dimming distribution on the mobile dimming element array 11 and further improves the processing capability of the exposure device.

又’以上之實施形態中’基板載台U之X方向位置與調光元件陣列1 1上調光分布之X方向位置，雖係八另I 42 200540457 獨立進行位置控制，但亦能同步’來移動調光元件陣列置。例如根據測量基板載台器1 6之輸出訊號，與該測驅動二維調光元件VM 1中現。轉基板載台14之X方向位置 Π上之調光分布之X方向位 14之X方向位置之雷射干涉 1值之既定量變動同步，藉由 -XCCD(XC)之構成，來加以實又’當光源、1係準分子雷射等脈衝發光型之光源時，在脈衝發光時，調光元件陣列u上之各微小反射鏡10a之傾斜=必須係設定在既定角度之狀態。在變更上述傾斜角 2狀恶中進仃脈衝發光時，將會造成與所欲圖案相異之明暗形狀分布被曝光至被曝光基板WJL情形，使所變差。丨因此，驅動xcCD(xc)之時序’最好是能與脈衝發光型光源1之發光時序同步進行。亦即，在脈衝發光型光源 ^之發光後，與此同步驅動XCCD(XC)，在下一脈衝發光 =的期間’完成訊號之轉送及各微小反射豸1Ga之傾斜角又更，之後，再度進行脈衝發光型光源丨之發光即可。。此時之XCCD(XC)之驅動，並不限於每一脈衝發光僅驅動1周期，亦即，並不限於將訊號保持要件BD所保持之汛唬僅轉送1列份至X方向相鄰之訊號保持要件。因此，能在各脈衝發光間，進行XCCD(XC)之複數個周期之驅動，將各訊號保持要件BD所保持之訊號轉送至沿χ 方向刀隔複數列之訊號保持要件BD 〇因此，即使是使用脈衝發光之重複率慢的脈衝發光光 43 200540457 源’亦能使調光元件陣列1 1上之調光分布往X方向之移動高速化’維持及提高曝光裝置之處理能力。又’在使用光罩之微細圖案曝光技術（目前微影技術中之主流）中’作為該光罩，一部分係採取使用局部變更透設光相位（光路長度）之所謂的移相光罩來提高解析度之方法。本發明之二維調光元件VM1，亦可作為具有此種移相作用之光罩。因此，在第4圖所示之調光元件MU中，將其構成為能使微小反射鏡1 〇a在上下方向（z方向）可動即可。由於從微小反射鏡1 〇a反射之照明光中，會形成微小反射鏡10a往z方向移動量之2倍的光路差，因此，能據以使二維調光元件VM1具有移相光罩之功能。為了將微小反射鏡丨0a驅動至Z方向，具體而言，例如，係在第4圖所示之調光要件49中，將支持微小反射鏡l〇a之支持構件31形成於導通線34上，在導通線34附近之基座板32形成開口部。因此，藉由導通線34之可撓 ^生，此使彳政小反射鏡10a上下動作。並且，將驅動電極Μ^ b形成為‘通成一體，另一方面，以高阻抗材料來形成連接電極39, 40, 41中之至少一個電極。 ^此外，供應正或負電位來作為電源電位、供應Q電位 /來作為接地電位時，由於會因控制電晶體43之導通，在被小反射鏡l〇a及驅動電極33a，33b蓄積正或負電荷而彼此產生斥力，故微小反射鏡！〇a移動至上方。另一方面，因控制電晶體43之不導通，微小反射鏡1〇a及驅動電極Μ、 44 200540457 33b成為〇電位，不會蓄曰结檟电何亦不產生斥力。因此，由導通線34之彈性，微小及射曰 J反射鏡10a回到原來位置。據此，能使微小反射鏡1 〇a上下動作。又，使用光罩之微細圖案曝光技術中，作為移相光罩之一形態，亦使用所謂的半色調移相光罩’其對光罩上之 1 无定圖案，不僅使來自該圖案之透射光相位與來自其他圖 :之⑽光反轉，亦會減低其透射率’藉此，能得到提高解析度荨效果。上述本發明 ^ 知a之曝先裝置及曝光方法中，例如藉由以下之方法，能實 ^ 兄〃此牛色凋移相光罩原理上同寺之構成，獲得同樣之效果。作為此方法之例，择士 μ、+、Η 係如上述變形例般，使用微小反射鏡l〇a在Ζ方向上下動作構成之二維調光元件vMi，且將複數個調光元# _之組合視為一個調光元件來進行調光。此係例如將相鄰4'個調光元件廳視為一個調光元件，將其中3個調光元件則中之上述微小反射鏡⑽配置於向之上方位置’而將剩餘之i個配置於原來位置（亦即， Z方向之下方位置）。且該等之Z方向位置之差，係設定為反射光束波長之1/4。此時’若將配置於Z方向下方位置之微小反射鏡心之反射光束之振幅反射率設為+ 1(基準）的話，配置於z方向上方位置之微小反射冑1〇a之反射光束之振幅反射率即 :、、、此、、σ果兩光束雖會因干涉而抵消，但反射鏡數夕勺振巾田反射率-1之光束會殘存’ 4個調光元件全體具有一 2之負振幅反射率。 45 200540457 另一方面，在其他部分若將構成相鄰4個調光元件MU 之各微小反射鏡l〇a皆配置於Z方向下方的話，由於來自該等反射鏡之振幅反射率之和為+ 4，故上述各微小反射鏡l〇a配置於z方向上方位置及下方位置狀態下的反射光，相對來自其他部分之反射光，係形成光量減低且相位反轉之光束，能形成半色調移相光罩。又’此時，調光元件陣列11上之調光元件MU之排列間距’須設定為充分的小於投影光學系統1 3之解析度，具體而g ’須設定為該解析度的一半程度以下，以避免相鄰複數個調光元件MU間之調光狀態變化，被曝光至被曝光基板W。又’上述本發明曝光裝置之第1實施形態及曝光方法之第1實施形態中，構成二維調光元件VM1 (可變成形光罩）之各調光元件MU中之微小反射鏡l〇a之法線方向與z 轴平行時’其反射光係經由投影光學系統1 3而曝光至被曝光基板1 3上。此構成中，由於射入微小反射鏡1 〇a之照明光1L2、與從微小反射鏡1 0a反射而照射於被曝光基板 w之照明光IL2，在空間上不分離，故為了分離兩光束必須有分束器9。因此’作為以下本發明曝光裝置之第2實施形態及曝光方法之第2實施形態，使用第7圖，來說明將射入二維调光凡件VM1(係可變成形光罩、具備微小反射鏡10a)之照明光IL2加以傾斜既定角度之例。又’本發明曝光裝置之第2實施形態，與第6圖中本 46 200540457 發明曝光裝置之第1實施形態大體上共通，第7圖中僅顯示變更部分。從中繼透鏡8射出之照明光IL4，被傾斜反射鏡9a反射成為照明光IL5，其全體相對投影光學系統i 3之光軸Αχ 以既定傾斜角照射至可變成形光罩之二維調光元件VM1。因此，若二維調光元件VM1上之微小反射鏡1〇a之反射面之法線方向與Z軸平行，則其反射光成為虛線所示之反射光IL7而反射，不射入投影光學系統13。另一方面，微小反射鏡丨〇a之反射面之法線方向對z 軸傾斜既定角度之情形時，其反射光IL6係往大致與z軸平行之方向反射，射入投影光學系統13而到達被曝光基板W。因此，第2實施形態之曝光裝置，具有能將射入二維调光7C件VM1之射入光束IL5與到達被曝光基板w之反射光束IL6在空間上加以分離，而不需分束器9之優點。In the above embodiment, the position of the X direction of the substrate stage U and the position of the X direction of the dimming distribution on the dimming element array 11 are eight separate I 42 200540457 for independent position control, but they can also be synchronized. Move the dimming element array. For example, based on the output signal of the measurement substrate stage 16 and the measurement driving two-dimensional dimming element VM1. The quantitative change of the laser interference 1 value in the X-direction position 14 in the X-direction position 14 on the X-direction position Π of the substrate stage 14 is synchronized, and it is implemented by the structure of -XCCD (XC). 'When a pulse light source such as a light source or an excimer laser is used, the inclination of each micro-mirror 10a on the dimming element array u must be set to a predetermined angle during pulse emission. When the pulsed light emission is changed in the above-mentioned oblique angle 2-shaped evil, the light and dark shape distribution different from the desired pattern will be exposed to the exposed substrate WJL, which will worsen the situation.丨 Therefore, it is preferable that the timing of driving xcCD (xc) 'can be performed in synchronization with the lighting timing of the pulsed light source 1. That is, after the pulse light-emitting light source ^ emits light, XCCD (XC) is driven in synchronization with this, and during the next pulse light-emission period, 'the signal is transmitted and the inclination angle of each minute reflection 豸 1Ga is further changed, and then, it is performed again. The pulse light source 丨 can emit light. . The driving of XCCD (XC) at this time is not limited to driving only one cycle for each pulse of light emission, that is, it is not limited to transmitting only one column of signals to the adjacent signals in the X direction. Keep the requirements. Therefore, it is possible to drive multiple cycles of XCCD (XC) between each pulse light emission, and to transfer the signals held by each signal holding requirement BD to the signal holding requirements BD separated by multiple sequences along the χ direction. Therefore, even if The use of pulsed light with a slow repetition rate of pulsed light 43 200540457 source 'can also speed up the movement of the dimming distribution on the dimming element array 11 to the X direction' to maintain and improve the processing capacity of the exposure device. Also in the "fine pattern exposure technology using a photomask (currently the mainstream in lithography technology)" as the photomask, a part of the so-called phase-shifting photomask is used to partially improve the transparent light phase (optical path length). Resolution method. The two-dimensional dimming element VM1 of the present invention can also be used as a photomask having such a phase shift effect. Therefore, in the light control element MU shown in Fig. 4, it is sufficient to configure it so that the minute mirror 10a can be moved in the vertical direction (z direction). Since the illumination light reflected from the micro-mirror 10a forms an optical path difference that is twice the amount of movement of the micro-mirror 10a in the z-direction, the two-dimensional dimming element VM1 can be provided with a phase-shifting photomask. Features. In order to drive the micro-mirror 0a to the Z direction, specifically, for example, in the light adjustment element 49 shown in FIG. 4, a support member 31 supporting the micro-mirror 10a is formed on the conduction line 34. An opening is formed in the base plate 32 near the conductive line 34. Therefore, the flexible small mirror 10a moves up and down due to the flexibility of the conducting wire 34. Further, the driving electrode M ^ b is formed as a single body, and at least one of the connection electrodes 39, 40, and 41 is formed of a high-impedance material. ^ In addition, when a positive or negative potential is supplied as a power supply potential, and a Q potential / is supplied as a ground potential, since the control transistor 43 is turned on, the positive or negative potential is accumulated by the small mirror 10a and the driving electrodes 33a, 33b. Negative charges cause repulsion to each other, so tiny mirrors! 〇a moves to the top. On the other hand, due to the non-conduction of the control transistor 43, the micro-mirror 10a and the driving electrodes M, 44 200540457 33b become zero potential, and no repulsive force will be generated due to the formation of electricity. Therefore, due to the elasticity of the conducting wire 34, the micro mirror Ja returns to its original position. Thereby, the minute mirror 10a can be moved up and down. In addition, in the fine pattern exposure technology using a photomask, as a form of a phase shifting mask, a so-called halftone phase shifting mask is also used. The amorphous pattern on the mask not only allows transmission from the pattern The phase of light and the light from other pictures: the inversion of the light will also reduce its transmittance. 'As a result, the effect of improving the resolution can be obtained. In the above-mentioned exposure device and exposure method of the present invention, for example, the following method can be used to realize that the structure of the bullish fade phase mask is basically the same as that of the temple, and the same effect is obtained. As an example of this method, the selection μ, +, and Η are two-dimensional dimming elements vMi configured by using the micro-mirror 10a to move up and down in the Z direction as in the above modification, and a plurality of dimming elements # _ The combination is regarded as a dimming element for dimming. This is, for example, the adjacent 4 'dimming element halls are regarded as one dimming element, and among the 3 dimming elements, the above-mentioned micro-mirrors ⑽ are arranged in an upward position' and the remaining i are arranged in The original position (that is, the position below the Z direction). And the difference between the positions in the Z direction is set to 1/4 of the wavelength of the reflected beam. At this time, 'If the amplitude reflectance of the reflected light beam of the micro-mirror core arranged at the position lower than the Z direction is set to +1 (reference), the amplitude of the reflected light beam of the micro-reflection arranged at the position above the z direction 胄 10a The reflectivity is: Although the two beams of ,,,,,, and σ will be canceled due to interference, the beams with a reflectance of -1 will remain in the mirror. The 4 dimming elements have a negative of 2 Amplitude reflectance. 45 200540457 On the other hand, if the micro-mirrors 10a constituting the four adjacent dimming elements MU are arranged below the Z direction in other parts, the sum of the amplitude reflectances from these mirrors is + 4. Therefore, the reflected light in the state where the above-mentioned micro-mirrors 10a are arranged in the upper and lower positions in the z direction, compared with the reflected light from other parts, forms a light beam with a reduced amount of light and a phase inversion, which can form a halftone shift. Photomask. Also, 'At this time, the arrangement pitch of the light control elements MU on the light control element array 11' must be set to be sufficiently smaller than the resolution of the projection optical system 13 and specifically, g 'must be set to less than half the resolution, In order to avoid changes in the dimming state between the adjacent plurality of dimming elements MU, they are exposed to the exposed substrate W. Furthermore, in the first embodiment of the exposure apparatus and the first embodiment of the exposure method of the present invention described above, the micro-mirrors 10a in each of the light-adjusting elements MU constituting the two-dimensional light-adjusting element VM1 (variable-shaped mask) When the normal direction is parallel to the z-axis, the reflected light is exposed to the exposed substrate 13 via the projection optical system 13. In this configuration, since the illumination light 1L2 incident on the micro-mirror 10a and the illumination light IL2 reflected from the micro-mirror 10a and irradiated on the exposed substrate w are not separated in space, it is necessary to separate the two beams. There is a beam splitter 9. Therefore, as the second embodiment of the exposure apparatus and the second embodiment of the exposure method of the present invention, FIG. 7 will be used to describe the case where the two-dimensional dimming device VM1 (a variable-shaped mask with a small reflection) An example in which the illumination light IL2 of the mirror 10a) is inclined at a predetermined angle. In addition, the second embodiment of the exposure apparatus of the present invention is substantially the same as the first embodiment of the exposure apparatus of the present invention shown in Fig. 6 and 200540457, and only the changed part is shown in Fig. 7. The illumination light IL4 emitted from the relay lens 8 is reflected by the tilt mirror 9a to become the illumination light IL5, and the entire illumination light IL4 is irradiated to the two-dimensional dimming element of the variable shape mask at a predetermined tilt angle with respect to the optical axis AX of the projection optical system i 3 VM1. Therefore, if the normal direction of the reflecting surface of the micro-mirror 10a on the two-dimensional dimming element VM1 is parallel to the Z axis, the reflected light is reflected by the reflected light IL7 shown by the dotted line, and does not enter the projection optical system. 13. On the other hand, when the normal direction of the reflecting surface of the micro mirror 丨〇a is inclined to the z-axis by a predetermined angle, the reflected light IL6 is reflected in a direction substantially parallel to the z-axis, and enters the projection optical system 13 to reach The substrate W to be exposed. Therefore, the exposure apparatus of the second embodiment has a space capable of separating the incident light beam IL5 incident on the two-dimensional dimming 7C component VM1 and the reflected light beam IL6 reaching the exposed substrate w without the need for a beam splitter 9 Advantages.

一％又少沏明。此時，以和第6圖所示之相同偏光元件乜等加以分割之部分照明光，雖分別以不同射入角度射入二維調光元件但本實施形態中，各部分照明光在整體上亦係以上述既定傾斜角射入二維調光元件VM1。疋 -明二二曝光方法中’特別是在採用變形 :、 a ’有光罩上之圖案形狀產生部分變形而被曝、’轉印至被曝光基板上的問S，為解決此問題 t 測該變形來事先修正光罩上形成之原版圖案形狀的、二用 47 200540457 t • 谓之〇pc ·光學近接效果修正）。本明之曝光裝置及曝光方法中，特別是在使用變形照明時，二維調光元件VM1上形成之調光分布形狀，會局部變形而被曝光於被曝光基板w上之情形時，亦能從所欲圖案形狀考慮該變形部分，來修正形成於可變成形光罩 VM1之調光分布。此修正，例如可根據待曝光至被曝光基板w上之所欲圖案形狀之貢料（如第5(A)圖所示之二維調光資料SD之資 • 料），以形狀訊號處理系統21來進行，或以二維調光元件 VMi内之控制電路機構12來進行。又，此修正亦可預先以曝光裝置外之資料處理裝置來進行，而在曝光裝置内不進行此修正。又，使用光罩之曝光方法中，亦有一種在投影光學系統與被曝光基板之間充滿液體，將射入被曝光基板之曝光用光（照明光）之波長僅縮該液體之折射率份，據以提昇其解析度之所謂的液浸曝光方法。此浸液曝光方法，亦能適籲用於本發明之曝光裝置及曝光方法，亦即，例如：在被爆光基板W及基板載台14和投影光學系統13之間，局部供應純水等液體，或藉由強制除去能實現浸液曝光方法。又，本發明之二維調光元件不限於上述反射型，亦能作為透射型之構成。以下，使用第8圖、第9圖，說明透射型二維調光元件之實施形態（本發明二維調光元件之第2 實施形態）。第8(A)圖係顯示二維調光元件VM2之局部的圖，係 48 200540457 放大顯示構成此二維調光元彳VM2之圖中虛線所示之調光元件則2在X方向排成3列、在γ方向排成3列的部刀。又，第8(B)圖係顯示通過調光元件MU2中央部之第8(α) 圖中之A—A，線之二維調光元件VM2的截面圖，第8(〇圖係顯示通過調光元件MU2端部之第8(a)圖中之B—B，線之二維調光元件VM2的截面圖。構成二維調光元件VM2之透射基板62，係由半導體材料（由氧化鎂、氧化鋅等帶隙（禁帶幅寬）大、對紫外線2 透射性良好之金屬氧化物、金屬敗化物及金屬氮化物或混合此等所構成者)構成。半導體材料吸收光之最長波長(吸收端波長)係由該半導體之帶隙來決定。亦即，將透射基板 62之帶隙’設為大於二維調元件VM2中假定使用之光(以下，簡稱「對象光」）之# !光子之能量，即能據以使透射基板62對對象光具有透射性。構成透射基板62之半導體材料，係設定為其帶隙略大於二維調光元# VM2之對象光波長之能量。例如··若對象光之波長為193麵之紫外光的話，則其i光子之能量為 6-42[eV]，故將構成透射基板62之材料之帶隙設為到 6.6[eV]左右即可，此可藉由氧化鎭與氧化辞之混合來加以實現。在透射基板62表面，分別對應各調光元件Mu2，形成有對對象光具有透射性之控制電極L22,⑶，⑶，⑶，幻3, L34, L42, L43, L44，除此以外之部分，則形成具有遮光性及絕緣性之遮光膜63。另一方面，在透過基板62背 49 200540457 面，形成有對對象光具有透射性之相同的對向電極⑷One percent is less clear. At this time, the part of the illumination light divided by the same polarizing element 乜 as shown in FIG. 6 is incident on the two-dimensional dimming element at different incident angles. However, in this embodiment, the illumination light of each part is overall. It also enters the two-dimensional dimming element VM1 at the predetermined tilt angle. In the 明 -Ming 22 exposure method, 'especially when using deformation :, a', the pattern shape on the photomask is partially deformed and exposed, and 'transfer to the exposed substrate is asked. In order to solve this problem, t Deformation to correct the shape of the original pattern formed on the reticle in advance. 47 200540457 t • 0pc. • Optical proximity effect correction). In the exposure device and method of the present invention, in particular, when the deformation illumination is used, the light distribution profile formed on the two-dimensional light adjustment element VM1 is partially deformed and is exposed on the exposed substrate w. The shape of the desired pattern takes into account this deformed portion to correct the dimming distribution formed in the variable forming mask VM1. This correction can, for example, process the system with a shape signal according to the material of the desired pattern shape to be exposed on the exposed substrate w (such as the two-dimensional dimming data SD shown in Figure 5 (A)). 21, or the control circuit mechanism 12 in the two-dimensional dimming element VMi. In addition, the correction may be performed in advance by a data processing device other than the exposure device, and the correction may not be performed in the exposure device. Also, in the exposure method using a photomask, there is also a method in which a liquid is filled between the projection optical system and the exposed substrate, and the wavelength of the exposure light (illumination light) incident on the exposed substrate is reduced by only the refractive index of the liquid. The so-called liquid immersion exposure method based on which the resolution is improved. This immersion liquid exposure method can also be suitably used in the exposure apparatus and exposure method of the present invention, that is, for example, partially supplying liquid such as pure water between the exposed substrate W and the substrate stage 14 and the projection optical system 13 , Or by forced removal can achieve the immersion exposure method. In addition, the two-dimensional light control element of the present invention is not limited to the above-mentioned reflective type, and can also be configured as a transmissive type. Hereinafter, embodiments of the transmissive two-dimensional dimming element (the second embodiment of the two-dimensional dimming element of the present invention) will be described with reference to Figs. 8 and 9. Figure 8 (A) is a diagram showing a part of the two-dimensional dimming element VM2, which is shown in 48 200540457 on an enlarged scale. The dimming elements shown by the dotted lines in the figure constituting the two-dimensional dimming element 彳 VM2 are arranged in the X direction. Partial knives arranged in three rows in the γ direction. Fig. 8 (B) is a cross-sectional view of the two-dimensional dimming element VM2, which is taken along line A-A in Fig. 8 (α) of the central portion of the dimming element MU2. Fig. 8 (〇 A cross-sectional view of the two-dimensional dimming element VM2 of line B-B in FIG. 8 (a) at the end of the dimming element MU2. The transmissive substrate 62 constituting the two-dimensional dimming element VM2 is made of a semiconductor material (by oxidation Magnesium, zinc oxide, and other band gaps (forbidden band widths), good transmission of ultraviolet 2 metal oxides, metal decay compounds and metal nitrides or a combination of these). The longest wavelength of light absorbed by semiconductor materials (Absorption end wavelength) is determined by the band gap of the semiconductor. That is, the band gap of the transmission substrate 62 is set to be larger than the light (hereinafter referred to as "target light") assumed to be used in the two-dimensional modulation element VM2. ! The energy of the photon can be used to make the transmissive substrate 62 transparent to the target light. The semiconductor material constituting the transmissive substrate 62 is set to the energy of the target light with a band gap slightly larger than the two-dimensional dimming element # VM2. For example ... If the wavelength of the target light is ultraviolet light of 193 planes, its i photon The energy is 6-42 [eV], so the band gap of the material constituting the transmissive substrate 62 can be set to about 6.6 [eV], which can be achieved by a mixture of hafnium oxide and oxidant. In the transmissive substrate 62 Control electrodes L22, ⑶, ⑶, ⑶, Magic 3, L34, L42, L43, and L44 are formed on the surface corresponding to each of the dimming elements Mu2, and have light-shielding properties. And light-shielding film 63. On the other hand, on the surface of the transmissive substrate 62, 49 200540457, a counter electrode having the same transmittance to the target light is formed.

此時，若在控制電極L22〜L44與對象電極μ之間施加既定電位差時，則可藉由佛朗兹S飢爾德修（FW 效應，使構成透射基板62之半導體材料之吸收端波長私至長波長側，而使其對對象光具有吸收特性。本第 2實施形態之二維調光元件彻，_用此效應控制各調光^牛咖之透射率或相位（以下，總稱「振幅透射率」），來貫現調光功能。 :透射基板62表面之上述遮光膜63 ±，形成有訊號配線寺（用來將既定電位施加於控制電極^以〜“句。此處，包含控制電極L22〜L24之各調光元件咖等調光訊號之，達，在本實施形態之二維調光元件VM2中，亦與上述第1竟施形態同樣的，係使用CCD元件。亦即，在各控制電極L22〜L44排列之Y方向之間隔部之遮光帛63上，形成有用來保持調光訊號、且將直轉送往X方向之X轉送路徑U2, U3, U4,仍。此係在遮光膜 63上屯成石夕等半導體膜’或進一步藉由回火（熱處理）等進行多結晶化或單結晶化來形成。此外，在其上形成與Y方向=體平行的第！相X轉送電極们，R3, R4、第2相χ轉 L电極S2, S3, S4、及第3相X轉送電極Τ1，Τ2, Τ3, Τ4。精由此等電極’在各轉送路徑U2〜U5上形成將電荷轉送往X方向之CCD(XCCD)，在第】相、第2相、第3 相之X轉达電極R2〜R4, S2〜S4，丁卜丁斗之各電極，依序細加3相之X時鐘訊號，藉此能將保持於各轉送路徑U2 50 200540457 〜U5上之各χ轉送電極R2〜R4，S2〜S4，T1〜T4正下方之電荷轉送往X方向。又，本第2實施形態中，相當於χ轉送路徑D3中之弟2相X轉送電極S2〜S4正下方部分，以下稱為「訊號保持要件」。此係相當於第3(C)圖中之訊號保持要件bd2, BD35 BD4之部分。本形態中，第2相χ ^ 上、該等與X轉送路徑U2〜U5之交又位置中央設有開口 P 71’ 72’ 73’ 74’ 75，76，77，78，79，X 轉送路徑 U2〜U5 上、保持在相當於第2相X轉送電極S2〜S4正下方之訊號保持要件之電荷之調光訊號，係透過開口部71〜79加以讀出。此外，第8(C)中之電極S2c，S2d、電極S3c，s3d、電極S4c，S4d係表示分別位於第2相χ轉送電極s2〜m 中之開口 74, 75, 76兩端位置之部分。、\在開口部71〜79之上方（+z方向），設有放大機構（用來碩取來自訊號保持要件之訊號，將此訊號放大並施加於控制電極L22〜L44)。在…中，雖為避免複雜化而省略此放大機構，以下，使用第9圖說明此機構。百先，於開口部75位置形成連接頭。此連接頭下端，係直接或透過絕緣膜連接於訊號保持要件BD3，在連接頭之上端部’形成石夕氧化膜等絕緣膜。並形成由多晶石夕等構成之控制電晶體85, 86、電源電極83及接地電極84。又此等之功能，與上述第1實施形態中相當之各構件功能相同。控制電晶體85, 86 -端部85係連接於電源電極^，另一端部86係透過另外形成之高阻抗構件88，連接於接 51 200540457 笔極84。又’在控制電晶體85，86之另一端部86連接局部配線87，局部配線87之另一端連接控制電極[33。據此，可使施加於控制電極L33之電位，根據保持於連接頭正下方之訊號保持要件BD3之電荷（調光訊號）來變化。亦即，可使二維排列之各調光元件MU2之振幅透射率，根據保持於訊號保持要件BD3之調光訊號變化。此蛉’調光要件之一係由未圖示之連接頭、控制電晶體85，86、高阻抗構件88、局部配線87、控制電極乙33、及對向電極64中與此對向之部分、及夾在控制電極l33 和對向電極64之該部分之透射基板62 一部分等構件所構成。又，調光元件MU2之一係由上述調光要件之一與訊號保持要件BD3所構成。調光元件MU2係在透射基板62上二維排列而構成調光元件陣列。此外，訊號保持要件BD3亦二維排列，且可藉由具訊號轉送機構功能之上述XCCD，將保持於各訊號保持要件BD3之電荷（調光訊號），依序轉送至訊號保持要件BD2, BD4(於X方向與各訊號保持要件BD3相鄰）。又，本第2實施形態之二維調光元件VM2中，調光元件MU2及對X方向之訊號轉送機構以外之機構以外之構成’可與第1實施形態之二維調光元件VM1相同。亦即，本第2實施形態之二維調光元件VM2中，其控制電路機構亦與第2圖所示之控制電路機構12同樣的，在由調光元件MU2所構成之調光元件陣列之兩端，設置左YCCD(LC) 及右YCCD(RC)作為訊號供應機構，藉設置與第2圖相同 52 200540457 φ- 之訊號處理系統1 2 1來構成。接著’針對使用本第2實施形態之透射型二維調光元件VM2的本發明第3實施形態之曝光形態之曝光裝置及第3實施形態之曝光方法，使用第1〇圖來加以說明。本貝施形恶之曝光裝置’亦係所謂掃描型之無光罩曝光裝置。此外’與第6圖所示之第1實施形態中符號相同之構件，由於係與第1實施形態相同之構件，故省略其說明。第1 〇圖中，從中繼透鏡8射出之照明光IL8被反射鏡 • 60反射，成為照明光IL9，射入上述透射型二維調光元件 VM2。被二維調光元件VM2所形成之振幅透射率分布加以屑’交之照明光IL1 〇，透過投影光學系統1 3照射至被曝光基板W ’藉此，以具有所欲強度分布（以二維調光元件vm2 形成）之照明光來使被曝光基板W曝光。本例中:’二維調光元件VM2上各調光元件MU2之大小’例如亦係從5到20 // m程度之方形，照明光IL8等波 φ長或投影光學系統12之數值孔徑，與第1實施形態之曝光裝置相同。又，關於對被曝光基板W之曝光動作，亦與第1實施形態之曝光裝置及第1實施形態之曝光方法相同’將形成於二維調光元件VM2上之調光元件陣列之調光刀布（振幅透射率分布），一邊在圖中+ χ方向及—X方 °之至J 一方向掃描、一邊透過投影光學系統1 3在被曝光基板W之投影方向掃描基板載台14。形狀訊號處理系、先21在該掃描曝光時，將待曝光至被曝光基板W上之圖木形狀傳達至二維調光元件VM2。 53 200540457 ' 其次’針對使用本發明之曝光裝置及曝光方法之元件製造方法，使用第π圖加以說明。第11 (A)圖係顯示形成有積體電路部分圖案91之狀熊之半導體晶圓等被曝光基板w的截面圖，在被曝光基板w 上圖案91以外的部分，形成有矽氧化膜等絕緣膜。此外，在該等之上層，進一步以CVD法（化學蒸鍍法）等來形成（成膜）由矽氧化膜所構成之絕緣膜等非加工膜在方、非加工膜92之上層以旋轉塗布等來形成光阻（感 _ 光材料）93。〜將此狀態之被曝光基板w裝載在本發明之曝光裝置，藉由上述曝光來曝光出所欲圖案。此曝光時，以位置對準顯微鏡19測量在被曝光基板w上既有電路圖案91之位置，保持與既有圖案91之既定位置關係，將所欲之圖案曝光。 / ^在此曝光後，將被曝光基板W上之光阻93加以顯影，鲁錯此’如第11(B)圖所示，將光阻93加工成對應上述所欲圖案被曝光部分之光阻圖案93p。作為光阻93，可使用除去曝光部分之正型與除去未曝光部分之負型的任一種。接著，將光阻圖案93p作為蝕刻光罩，對被加工層92 =订触刻，如f 11(c)圖所示，將被加工層％傲照光阻圖案93j>之形狀加工成圖# 92p'然後，藉由溶劑或光化學反應等除去光阻圖案93p’完成將被加工層92加工成所欲圖案92p的步驟（圖案化步驟）。高積體且高功能元件，係藉由重複上述成膜及圖案化 54 200540457 ㈣來形成H被加工層92不限於上述例之絕緣膜， =然亦可是金屬或半導體等導電層。x，待加卫層^艮於 h形成在被曝光基板w上之膜，亦能包含將被曝光基板w 本身加工成既定形狀之步驟。本毛明之曝光方法不僅能利用於元件之製造，而且能使用在光罩之製造。At this time, if a predetermined potential difference is applied between the control electrodes L22 to L44 and the target electrode μ, the wavelength of the absorption end of the semiconductor material constituting the transmissive substrate 62 can be made private by the Franz S. Henders (FW effect). To the long-wavelength side so that it has absorption characteristics for the target light. The two-dimensional dimming element of this second embodiment uses the effect to control the transmittance or phase of each dimming ^ cattle coffee (hereinafter, collectively referred to as "amplitude Transmittance "), to implement the dimming function .: The above-mentioned light-shielding film 63 ± on the surface of the transmission substrate 62 is formed with a signal wiring temple (for applying a predetermined potential to the control electrode ^ ~ ~). Here, control is included The dimming signals of the dimming elements such as the electrodes L22 to L24 are as follows. In the two-dimensional dimming element VM2 of this embodiment, the same as the first embodiment, a CCD element is used. That is, The X-ray transmission paths U2, U3, and U4 for holding the dimming signal and sending the direct transfer to the X-direction are formed on the light-shielding 帛 63 of the Y-direction spacers in which the control electrodes L22 to L44 are arranged. Semiconductor films such as Shi Xi are formed on the light-shielding film 63 ' It is further formed by tempering (heat treatment), etc., to perform polycrystallization or single crystallization. In addition, a first phase X transfer electrode is formed parallel to the Y direction = body! Phase X transfer electrodes, R3, R4, and second phase χ transfer The L electrodes S2, S3, S4, and the third-phase X transfer electrodes T1, T2, T3, and T4. These electrodes are formed on each transfer path U2 to U5 to form a CCD (XCCD) that transfers charges to the X direction. ), At the X] phase, the 2nd phase, and the 3rd phase of the X relay electrodes R2 ~ R4, S2 ~ S4, each electrode of Dingbu Dingdou, in order to add the X clock signal of 3 phases in order, so that the The electric charges directly under the respective χ transfer electrodes R2 to R4, S2 to S4, and T1 to T4 held on each transfer path U2 50 200540457 to U5 are transferred to the X direction. In the second embodiment, this corresponds to the χ transfer The part directly below the two-phase X transfer electrodes S2 to S4 in the path D3 is hereinafter referred to as "signal holding requirements". This is equivalent to the signal holding requirements bd2 and BD35 BD4 in Fig. 3 (C). This form In the middle of the second phase, χ ^, the intersection with the X transfer path U2 ~ U5 and the center is provided with an opening P 71 '72' 73 '74' 75, 76, 77, 78, 79, X transfer The dimming signal of the electric charges on the paths U2 to U5, which are held under the signal holding requirements corresponding to the second-phase X transfer electrodes S2 to S4, is read through the openings 71 to 79. In addition, Section 8 (C) The electrodes S2c, S2d, electrodes S3c, s3d, and electrodes S4c, S4d represent the positions at the ends of the openings 74, 75, and 76 in the second phase χ transfer electrodes s2 to m, respectively. Above 79 (+ z direction), there is an amplification mechanism (used to obtain the signal from the signal holding requirements, amplify this signal and apply it to the control electrodes L22 ~ L44). Although the enlargement mechanism is omitted in order to avoid complication, the mechanism will be described below with reference to FIG. 9. Baixian formed a connector at the position of the opening 75. The lower end of this connector is connected to the signal holding element BD3 directly or through an insulating film, and an insulating film such as a stone oxidized film is formed on the upper end portion of the connector. Control transistors 85, 86, a power electrode 83, and a ground electrode 84 made of polycrystalline stone and the like are formed. These functions are the same as those of the corresponding components in the first embodiment. The control transistor 85, 86-the end portion 85 is connected to the power electrode ^, and the other end portion 86 is connected to the pen electrode 84 through a high-resistance member 88 formed separately. Further, a local wiring 87 is connected to the other end portion 86 of the control transistor 85, 86, and the other end of the local wiring 87 is connected to the control electrode [33. Accordingly, the potential applied to the control electrode L33 can be changed in accordance with the electric charge (dimming signal) of the signal holding element BD3 held directly below the connector. In other words, the amplitude transmittance of the two-dimensionally-arranged dimmer elements MU2 can be changed in accordance with the dimmer signal held by the signal retaining element BD3. One of the dimming requirements is a connector (not shown), control transistors 85, 86, high-impedance member 88, local wiring 87, control electrode 33, and counter electrode 64. And a part of the transmission substrate 62 sandwiched between the control electrode 133 and the counter electrode 64. One of the dimming elements MU2 is composed of one of the above-mentioned dimming requirements and the signal holding requirement BD3. The light control elements MU2 are two-dimensionally arranged on the transmission substrate 62 to form a light control element array. In addition, the signal retention requirements BD3 are also two-dimensionally arranged, and the above-mentioned XCCD with the function of a signal transfer mechanism can keep the electric charge (dimming signal) in each signal retention requirement BD3 and sequentially transfer to the signal retention requirements BD2, BD4 (Adjacent to each signal holding requirement BD3 in the X direction). Further, in the two-dimensional dimming element VM2 of the second embodiment, the configuration other than the dimming element MU2 and the mechanism other than the signal transmission mechanism for the X direction may be the same as the two-dimensional dimming element VM1 of the first embodiment. That is, in the two-dimensional dimming element VM2 of the second embodiment, the control circuit mechanism is the same as that of the control circuit mechanism 12 shown in FIG. 2 in the dimming element array composed of the dimming element MU2. At both ends, a left YCCD (LC) and a right YCCD (RC) are provided as signal supply mechanisms, and a signal processing system 52 200540457 φ- which is the same as that in Fig. 2 is set up to constitute 1 2 1. Next, the exposure apparatus of the third embodiment of the present invention and the exposure method of the third embodiment using the transmission-type two-dimensional dimming element VM2 of the second embodiment will be described using FIG. 10. The bezier-type exposure apparatus' is also a so-called scanning maskless exposure apparatus. In addition, components having the same reference signs as those in the first embodiment shown in Fig. 6 are the same components as those in the first embodiment, and a description thereof will be omitted. In Fig. 10, the illuminating light IL8 emitted from the relay lens 8 is reflected by the reflecting mirror 60, and becomes the illuminating light IL9, and enters the transmission-type two-dimensional dimming element VM2. The illuminating light IL1 〇 intersected by the amplitude transmittance distribution formed by the two-dimensional dimming element VM2 is irradiated to the exposed substrate W through the projection optical system 13 to thereby have a desired intensity distribution (in two-dimensional The illumination light formed by the dimming element vm2 is used to expose the exposed substrate W. In this example: 'the size of each dimmer element MU2 on the two-dimensional dimmer element VM2' is, for example, a square from 5 to 20 // m, the iso-wave length of the illumination light IL8, or the numerical aperture of the projection optical system 12, It is the same as the exposure apparatus of the first embodiment. In addition, the exposure operation to the exposed substrate W is also the same as the exposure device of the first embodiment and the exposure method of the first embodiment. The light adjusting knife of the light adjusting element array to be formed on the two-dimensional light adjusting element VM2 The cloth (amplitude transmittance distribution) scans the substrate stage 14 in the projection direction of the exposed substrate W through the projection optical system 1 3 while scanning in the + χ direction and -X direction to J direction in the figure. The shape signal processing system first transmits the shape of the figure to be exposed on the exposed substrate W to the two-dimensional dimming element VM2 during the scanning exposure. 53 200540457 'Second' A method for manufacturing a device using the exposure apparatus and the exposure method of the present invention will be described with reference to FIG. FIG. 11 (A) is a cross-sectional view showing a substrate w exposed such as a semiconductor wafer having a pattern of integrated circuit portion 91, and a silicon wafer or the like is formed on a portion other than pattern 91 on the exposed substrate w. Insulation film. In addition, a non-processed film such as an insulating film composed of a silicon oxide film is further formed (formed) on the upper layers by a CVD method (chemical vapor deposition method) or the like, and the non-processed film 92 is spin-coated on the upper layer. Wait to form a photoresist (sensing_light material) 93. ~ The exposed substrate w in this state is mounted on the exposure apparatus of the present invention, and a desired pattern is exposed by the above-mentioned exposure. During this exposure, the position of the existing circuit pattern 91 on the exposed substrate w is measured with the position alignment microscope 19, and the desired pattern is exposed while maintaining a predetermined positional relationship with the existing pattern 91. / ^ After this exposure, the photoresist 93 on the exposed substrate W is developed, and the error is' as shown in Figure 11 (B), the photoresist 93 is processed into light corresponding to the exposed portion of the desired pattern described above. Resist pattern 93p. As the photoresist 93, either of a positive type in which exposed portions are removed and a negative type in which unexposed portions are removed can be used. Next, the photoresist pattern 93p is used as an etching mask, and the processed layer 92 is etched. As shown in the figure f 11 (c), the shape of the processed layer% proudly illuminates the photoresist pattern 93j> is processed into a picture # 92p 'Then, the photoresist pattern 93p is removed by a solvent, a photochemical reaction, etc.' The step of processing the processed layer 92 into a desired pattern 92p (patterning step) is completed. The high-capacity and high-function element is formed by repeating the above-mentioned film formation and patterning 54 200540457 ㈣ to form the H processed layer 92 is not limited to the insulating film of the above example, but it can also be a conductive layer such as a metal or a semiconductor. x, the to-be-guarded layer, and the film formed on h on the exposed substrate w, can also include the step of processing the exposed substrate w itself into a predetermined shape. This Maoming exposure method can be used not only in the manufacture of components, but also in the manufacture of photomasks.

。使用本發明之二維調光元件，可根據所輸入之形狀訊唬L在構成此調光元件陣列上形成二維調光分布，且能使该分布單向高速移動。因此，例如在用作為掃描型之益光罩2光裝置之可變成型光罩時，能在該曝光裝置之掃描法中问速私動戎調光分布，提高曝光裝置之處理能力。 “壯又，使用本發明之曝光裝置，則在掃描型之無光罩曝光Ij中，能將本發吸之二維調光元件用作為可變成形光 T，藉此能使形成於可變成形光罩上之調光分布單向高速矛夕動因此，能提高曝光裝置之處理能力，提高半導體積體電路等元件之生產性。一又，使用本發明之曝光方法，藉將本發明之二維調光件用作為可變成形光罩，即能使形成於可變成形光罩上 :凋光分布單向高速移動。因此，能提高曝光裝置之處理力耠向半導體積體電路等元件之生產性。再者，使用本發明之元件製造方法，由於係以本發明上述回生產性之曝光方法來製造元件，因此能提高元件护f產丨生削減兀件生產成本。此外，能與無光罩曝光方法 u之光罩成本削減效果互起作用，更進一步的削減元件 55 200540457 之生產成本。【圖式簡單說明】弟 1圖一 , ，、-員不本發明二維調光元件之第1實施形態之二維調光元件VM1的圖。第圖傳、顯不構成本發明二維調光元彳VM1之控制電路機構12的圖。. By using the two-dimensional dimming element of the present invention, the two-dimensional dimming distribution can be formed on the array of the dimming element according to the input shape, and the distribution can be moved unidirectionally and at high speed. Therefore, for example, when a variable-shaped photomask used as a scanning type benefit photomask 2 light device is used, the light distribution of the exposure device can be adjusted in the scanning method of the exposure device to improve the processing capacity of the exposure device. "Zhuang, using the exposure device of the present invention, in the scanning type maskless exposure Ij, the two-dimensional light-adjusting element of the hair absorption can be used as the variable forming light T, thereby enabling the formation of The dimming distribution on the reticle is unidirectional and high-speed. Therefore, the processing capacity of the exposure device can be improved, and the productivity of components such as semiconductor integrated circuits can be improved. Furthermore, by using the exposure method of the present invention, The two-dimensional dimming element is used as a variable-shaped photomask, that is, it can be formed on the variable-shaped photomask: the light distribution is moved unidirectionally and at high speed. Therefore, the processing power of the exposure device can be improved, and the semiconductor integrated circuit and other components can be improved. In addition, since the element manufacturing method of the present invention is used to manufacture the element by the above-mentioned reproducible exposure method of the present invention, it is possible to improve the production of element protection and reduce the production cost of components. The mask-less exposure method u's mask cost reduction effect interacts with each other, further reducing the production cost of the component 55 200540457. [Simplified illustration of the drawing] Brother 1 Figure 1 A diagram of the two-dimensional dimming element VM1 of the first embodiment of the optical element. The figure shows and shows a diagram of the control circuit mechanism 12 constituting the two-dimensional dimming element 彳 VM1 of the present invention.

第3(A)圖係顯示本發明二維調光元# VM1之構成要件之電荷轉合要件MU的俯視圖，（b)係顯示線段A—A，的截面圖’（C)係顯示線段B — B，的截面圖。第4圖係顯示構成本發明二維調光元件VM1之調光元件MU及電荷耗合要件mu的圖。第5(A)圖係顯示對應待形成在本發明二維調光元件 VMi之調光元件陣列n上之調光分布之二維調光資料sd 的圖，（B)係顯示形成於調光元件陣列丨丨上之調光狀態分布例VD 1的圖，（C)係顯示形成於調光元件陣列丨丨上之調光狀態分布之其他例VD2的圖。第6圖係顯示具備本發明之二維調光元件VM1來作為可變成形光罩之本發明第1實施形態之曝光裝置的圖。第7圖係顯示具備本發明之二維調光元件VM1來作為可變成形光罩、照明光1L5係傾斜射入二維調光元件VM j 之本發明第2實施形態之曝光裝置的部分圖。第8 (A)圖係顯示本發明二維調光元件之第2實施形熊之二維調光元件VM2之部分調光元件MU2的俯視圖，（B) 56 200540457 係顯示線段A — A ’的截面圖，（c)係顯示線段B — B，的截面圖。第9圖係顯示第8圖所示之本發明二維調光元件之第 2實施形態中，形成於開口 55上方及其附近之調光要件的圖〇FIG. 3 (A) is a plan view showing the charge transfer element MU constituting the two-dimensional dimming element # VM1 of the present invention, (b) is a cross-sectional view showing line segments A-A, and (C) is a line segment B. — B, sectional view. Fig. 4 is a diagram showing a light adjustment element MU and a charge consumption requirement mu constituting the two-dimensional light adjustment element VM1 of the present invention. FIG. 5 (A) is a diagram showing a two-dimensional dimming data sd corresponding to a dimming distribution to be formed on the dimming element array n of the two-dimensional dimming element VMi of the present invention, and (B) is a graph showing the dimming (C) is a diagram showing another example VD2 of the dimming state distribution formed on the dimming element array 丨丨. Fig. 6 is a view showing an exposure apparatus according to the first embodiment of the present invention, which is provided with the two-dimensional light control element VM1 of the present invention as a variable shape mask. FIG. 7 is a partial view showing an exposure apparatus according to a second embodiment of the present invention, which includes the two-dimensional dimming element VM1 of the present invention as a variable shaping mask, and the illumination light 1L5 is incident on the two-dimensional dimming element VM j obliquely. . Fig. 8 (A) is a plan view showing a part of the dimming element MU2 of the two-dimensional dimming element VM2 of the second embodiment of the two-dimensional dimming element of the present invention. (B) 56 200540457 shows the line segment A-A '. The cross-sectional view (c) is a cross-sectional view showing a line segment B-B. Fig. 9 is a diagram showing the dimming elements formed above and near the opening 55 in the second embodiment of the two-dimensional dimming element of the present invention shown in Fig. 8.

、第1 〇圖係顯不具備本發明之二維調光元件VM2來作為可變成形光罩之本發明第3實施形態之曝光裝置的圖。第11圖係說明本發明之元件製造方法的圖。【主要元件符號說明】Fig. 10 is a view showing an exposure apparatus according to a third embodiment of the present invention, which does not include the two-dimensional dimming element VM2 of the present invention as a variable shape mask. Fig. 11 is a diagram illustrating a method for manufacturing a device according to the present invention. [Description of main component symbols]

A1〜5 B1〜5 BD C1〜5 CU D3〜5 IL0 〜10 第1相X轉送電極弟2相X轉送電極訊號保持要件第3相X轉送電極電荷耦合要件 X轉送路徑照明光 LC MU, MU2 左YCCD(將電荷轉送π <王γ方向之CCD) 調光元件 PA，PB，PC 轉送訊號線A1 ~ 5 B1 ~ 5 BD C1 ~ 5 CU D3 ~ 5 IL0 ~ 10 1st phase X transfer electrode 2nd phase X transfer electrode signal holding requirement 3rd phase X transfer electrode charge coupling requirement X transfer path illumination light LC MU, MU2 Left YCCD (Transfer charge to π < King γ direction CCD) Dimming element PA, PB, PC signal line

VM1，VM2 RC XC 二維調光元件右YCCD(將電荷轉送至 XCCD(將電荷轉送至X 光源 Y方向之CCD) 方向之CCD) 57 200540457 8 中繼透鏡 10a 微小反射鏡 11 調光元件陣列 12 控制電路機構 13 投影光學系統 14 基板載台 19 位置對準顯微鏡 20 主控制系統 21 形狀訊號處理系統 43 控制電晶體 50 半導體基板 62 透射基板 92 被加工層 93 光阻 120 訊號保持轉送機構 121 訊號處理系統 58VM1, VM2 RC XC Two-dimensional dimming element right YCCD (transfer charge to XCCD (CCD to transfer X light source to Y direction) CCD) 57 200540457 8 relay lens 10a tiny mirror 11 dimming element array 12 Control circuit mechanism 13 Projection optical system 14 Substrate stage 19 Position alignment microscope 20 Main control system 21 Shape signal processing system 43 Control transistor 50 Semiconductor substrate 62 Transmissive substrate 92 Processed layer 93 Photoresistor 120 Signal holding transfer mechanism 121 Signal processing System 58

Claims

200540457 10. Scope of patent application: 1. A two-dimensional dimming element, which is characterized by having:-a dimming element array, which is a two-dimensional array of peripheral light elements. The signal maintenance requirements of the dimming signal and the dimming requirements of dimming the irradiated light beam according to the dimming signal; The signal transfer mechanism is a dimming signal that holds the signal retention requirements of the dimming element , Which are sequentially transferred to the signal maintaining requirements in the dimming element adjacent to the 帛! Direction; and the signal supply mechanism is to supply the dimming signal to the dimming element arranged at at least one end in the i-th direction. 2. The two-dimensional dimming element according to item 1 of the scope of patent application, wherein the dimming element of the dimming element constituting the dimming element array is equal to the dimension row 歹 4, which is arranged between the first and the first dimension. On the grid points of the square grid on the orthogonal coordinate system defined by the coordinate axis that is parallel to the direction and the coordinate axis that is perpendicular to the first direction. 3. For the two-dimensional dimming element of the scope of application for patent, the signal The transfer mechanism includes a charge-coupled element. 4. If the two-dimensional dimming element of the first patent application scope, the signal supply mechanism includes a charge-coupled element. 5. If the two-dimensional dimming element of the patent application scope, Among them, the signal transmission mechanism and the dimming element array have a laminated structure. 6. If the two-dimensional dimming element of the scope of the patent application, the dimming system changes the amplitude transmittance of the dimming element. 7 For example, the two-dimensional dimming element of the first patent application scope, wherein the dimming element includes a reflector, and the dimming system changes the efficiency of the reflected light beam to the direction of 59 200540457. 8. The scope of the patent application The two-dimensional dimming element of item 7, wherein the efficiency is changed by changing the inclination angle of the reflecting surface of the mirror. 9. The two-dimensional dimming element of item 7 in the scope of patent application, wherein, The dimming system changes the phase of the reflected light reflected by the mirror. 10. A two-dimensional dimming element, comprising: a dimming element array, which is a two-dimensional dimming element According to the list, the dimming element is composed of a signal holding element for maintaining a dimming signal and a dimming element for dimming an irradiated light beam according to the dimming signal; a signal transfer mechanism is to be maintained at the The dimming signals of the signal holding elements in the dimming element are sequentially transferred to the signal holding elements in the dimming element adjacent to each other along the first direction; and the signal supply mechanism is to supply the dimming signals to the array of ' The signal holding element in the dimming element on at least one end of the i-th direction; and the dimming element includes a reflecting mirror, and the dimming system changes the inclination angle of the reflecting surface of the reflecting mirror, thereby changing the reflected light beam to a predetermined value. Efficiency in the direction 〇1. The two-dimensional dimming element according to item 10 of the patent application scope, wherein the two-dimensional arrangement of the dimming elements constituting the array of dimming elements is the arrangement of f and the direction of 帛 1. A grid point of a square grid on a regular father coordinate system defined by a parallel coordinate axis and a coordinate axis perpendicular to the first direction. 12 The two-dimensional dimming element according to item 10 of the patent scope, wherein the signal transfer mechanism includes a charge coupled element. 60 200540457 13. The two-dimensional dimming element according to item 10 of the patent application scope, wherein the signal supply mechanism includes a charge coupled element. 14. For a two-dimensional dimming element according to item 10 of the scope of patent application, wherein the signal transmission mechanism and the dimming element array have a layered structure. 15. An exposure device for exposing a desired pattern on an exposed substrate, comprising: a two-dimensional dimming element, which is any one of items 1 to 14 in the scope of patent application; i shape The signal processing system is to supply the dimming signal to the two-dimensional dimming element; the illumination optical system is to illuminate the illuminating light from the light source to the two-dimensional dimming 7L piece; the projection scene> optical system is to be The illuminating light adjusted by the two-dimensional dimming element is guided to the exposed substrate; and the substrate stage 'holds the exposed substrate and can be projected by the projection optical system onto the exposed substrate in the first direction. Scanning is performed in the second direction. 16. The exposure device according to item 5 of the patent application scope, wherein the signal transfer of the two-dimensional dimming element is performed in synchronization with the position change in the second direction of the substrate stage. 17. For the exposure device under the scope of patent application No. 15, in the above description, the light source is a pulsed light source, and synchronized with the light emission of the pulse light, the signal is transmitted by a one-dimensional dimming element. 18. An exposure device for exposing a desired pattern on the substrate to be exposed 61 200540457. The substrate is characterized in that it includes: a two-dimensional dimming element, which is any one of items 1 to 14 in the scope of patent application. The shape signal processing system is to supply the dimming signal to the two-dimensional dimming element; the illumination optical system is to illuminate the illumination light from the light source to the two-dimensional dimming element; the projection optical system is to be controlled by the The illumination® light adjusted by the two-dimensional dimming element is guided to the exposed substrate; and the substrate stage holds the exposed substrate and can be projected on the exposed substrate by the projection optical system in the first direction. Scanning is performed in a second direction of the upper direction; and the illumination optical system is configured to irradiate the entire illumination light with a predetermined angle with respect to an optical axis of the projection optical system to illuminate the two-dimensional dimming element. 19. For the exposure device according to item 18 of the scope of patent application, wherein the signal transfer of the two-dimensional dimming light element is performed synchronously with the change in the position of the substrate in the second direction. 20. The exposure device according to item 18 of the scope of application for a patent, wherein the light source is a pulsed light source and is synchronized with the light emission of the pulsed light to perform the signal transfer of the two-dimensional dimming element. 2 1. An exposure method, which irradiates illumination light to a variable-shaped mask, and irradiates the illumination light adjusted by the variable-shaped mask to a substrate to be exposed through a projection optical system, which is characterized by ... Use the two-dimensional dimming 62 200540457 f light element of any one of the scope of patent applications 1 to 14 as a variable shape mask; keep the dimming signal corresponding to the desired pattern at the dimming The dimming element in the element array is used to form a dimming distribution corresponding to the desired pattern in the dimming element array, and the signal maintaining element held in the dimming element is required by the signal transfer mechanism. The dimming signal is sequentially transferred to the signal holding requirements in the dimming element adjacent to the first direction, and the dimming distribution formed in the dimming element array is moved to the first direction; and

The exposure is performed while moving the exposed substrate along the first direction to the second direction from the projection optical system onto the exposed substrate in a second direction. 22. The exposure method according to item 21 of the patent application, wherein the signal is transferred in synchronization with the movement of the exposed substrate in the second direction: 23. The exposure method according to item 21 of the patent application, wherein:誃 Zhaoming light is pulsed light emitted from a pulsed light source. · ',' Synchronizes with the light emission of the pulsed light, and transmits the signal. 24.-An exposure method 'is that the illumination light is irradiated to a variable and will be adjusted by the variable forming flower w & M k ^ 疋 zao' The illumination light adjusted by the forming first cover is irradiated to the exposed substrate through projection, It is characterized by: Nine stems-using any of the 14th scope of the patent application _ ^ light element as a variable shape mask; one-dimensional guarantee by the dimming signal corresponding to the desired pattern # F R in the array, 周 / 〇 Zhou Guangyuan 4 ^ Fan Niu, based on the saw pattern of the desired pattern in the dimming element array 1 ^ first cloth, and by the signal transfer mechanism 4 63 200540457 _ The dimming signal of the signal holding element in the dimming element is sequentially transferred to the signal holding element in the dimming element adjacent to the first direction, and will be formed in the dimming element The dimming distribution of the array moves to the first direction; while moving the exposed substrate along the first direction onto the exposed substrate by the projection optical system in the second direction, the second direction is moved relative to the projection optical system. Exposure; and the illumination light to the two Irradiating the dimming element, so that all relative to the optical axis of the projection optical system LU of the inclination to a predetermined angle. 25. The exposure method according to item 24 of the patent application scope, wherein the signal transfer is performed in synchronization with the transfer of the exposed substrate to the second direction. 26. The exposure method according to item 24 of the patent application range, wherein the illumination light is pulsed light emitted from a pulsed light source; the signal is transmitted in synchronization with the emission of the pulsed light. 7 types of component manufacturing methods include an exposure step. This step is to irradiate illumination light to a variable forming mask, and to illuminate the illumination light that is adjusted by the variable forming mask with a projection optical system to be formed. The exposed substrate of the element is characterized in that in this exposure step, a two-dimensional dimming element in any one of the scope of application patent Nos. 1-4 is used as a variable-shaped photomask; The dimming signal corresponding to the desired pattern is maintained in the dimming element in the dimming element array, so that a dimming distribution corresponding to the desired pattern is formed in the dimming element array, and the signal transfer mechanism is used. , Sequentially transferring the 64-channel 2005 dimming signal of the signal-retaining element held in the dimming element to the signal-retaining element of the dimming element adjacent to the 丨 direction in order to form the dimming element The dimming distribution of the array is along the first! The direction is moved; and-the exposure is performed while moving the exposed substrate in a second direction of the direction on the exposed substrate that is projected by the projection optical system in the first direction. 28. The component manufacturing method according to item 27 of the scope of patent application, wherein the signal transfer is performed in synchronization with the movement of the exposure substrate in the second direction. 29. The method for manufacturing a component according to item 27 of the scope of patent application, wherein the illumination light is pulsed light emitted from a pulsed light source; the signal is transmitted in synchronization with the emission of the pulsed light. 30. A method for manufacturing a component, comprising an exposure step. This step irradiates illumination light to a variable-shaped mask, and irradiates the illumination light adjusted by the variable-shaped mask to a projection optical system to be formed. The exposed substrate of the element is characterized in that in this exposure step, a two-dimensional dimming element according to any of claims 1 to 14 of the scope of patent application is used as a variable-shaped photomask; The dimming signal that should be the desired pattern is kept in the dimming element in the dimming element array, so as to form a 5 square light distribution of 4 squares of the desired pattern in the dimming element array, and by the signal The transfer mechanism sequentially transfers the dimming signal of the signal holding element held in the dimming element to the signal holding element in the dimming element adjacent to the first direction so as to form the dimming element. The dimming distribution of the s-piece array is shifted along the i-th direction by 65 200540457; the exposure is performed while the exposed substrate is moved along the system in the direction from the shadow to the exposed substrate; and the first direction is projected optically Put in the second direction, and irradiate the illumination light to the two-dimensional dimming element with respect to the projection optics by tilting the optical axis of the projection optical system by a predetermined angle to perform heading 31, such as item 30 of the scope of patent application The element manufacturing method is to move the exposed substrate to the second direction.

,,, y Enter the signal transition, of which 32, as in the method for manufacturing a component of the scope of application for item 30, the illumination light is pulse light emitted from a pulse light source; / synchronized with the light emission of the pulse light, The signal was forwarded. ’Η— ^ Schematic: as the next page

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