WO2005081034A1

WO2005081034A1 - Two-dimensional light modulation device, exposure apparatus, and exposure method

Info

Publication number: WO2005081034A1
Application number: PCT/JP2005/002940
Authority: WO
Inventors: Naomasa Shiraishi
Original assignee: Nikon Corporation
Priority date: 2004-02-25
Filing date: 2005-02-23
Publication date: 2005-09-01
Also published as: TW200540457A; JPWO2005081034A1

Abstract

A scanning-type maskless exposure apparatus having, as a variable forming mask, a two-dimensional light modulation device capable of moving a formed modulated light distribution in one direction at a high speed. A two-dimensional light modulation device (VM1) is used as a variable forming mask of a scanning-type maskless exposure apparatus. The light modulation device (VM1) has a light modulation element array (11) where light modulation elements each composed of a signal holding element and a light modulation element are two dimensionally arranged and has a control circuit mechanism (12) capable of sequentially sending a light modulation signal, held by a signal holding element, in one direction to an adjacent signal holding element. A light modulation state distribution, as a pattern on the variable forming mask, capable of being sent in one direction is transferred, through a projection optical system (13), on a moving substrate (W) to be exposed.

Description

Specification

Two-dimensional light control device, exposure apparatus, and exposure method

Technical field

The present invention relates to an exposure technique used in a lithographic process for manufacturing various devices such as a semiconductor integrated circuit (LSI or the like), an image sensor, or a liquid crystal display, for example. The present invention relates to a so-called maskless exposure technique in which exposure is performed using a variable-shaped mask without using a photomask on which a pattern is drawn. The present invention also relates to a device manufacturing technique using the exposure technique.

Background art

[0002] When forming a fine pattern constituting an electronic device such as a semiconductor integrated circuit or a liquid crystal display, a photomask drawn on a transparent glass substrate by enlarging the pattern to be formed by about 415 times. Using a reticle or simply a mask, the original pattern on the photomask is reduced by a projection optical system to a photosensitive film (photoresist) on a wafer (or glass plate, etc.) as a substrate to be exposed, and is exposed and transferred. The method is used. At the time of the exposure transfer, a static exposure type projection exposure apparatus such as a stepper and a scanning exposure type projection exposure apparatus such as a scanning stepper are used.

[0003] The original pattern is drawn on a photomask by an electron beam drawing apparatus or a laser drawing apparatus based on design data of the pattern. With the miniaturization of semiconductor integrated circuits and the like, the size of an original pattern on a photomask is also becoming finer, and the amount of patterns to be drawn is also increasing. As a result, the time required for drawing an original pattern on a photomask and for inspecting the pattern after the drawing increases, and the manufacturing cost of the photomask increases.

[0004] Therefore, without using a photomask in which a pattern is fixedly formed on a glass substrate, its transmittance or reflectance can be variably set based on pattern design data. So-called “maskless exposure apparatuses” and “maskless exposure methods” for exposing a wafer or the like using a “formed mask” have also been proposed (for example, Patent Document 1, Patent Document 2, Non-patent Document 1). And Non-Patent Document 2). Patent Document 1: U.S. Patent Application Publication No. 2003 / 0081303A1

Patent Document 2: US Patent Application Publication No. 2003 / 0202233A1

Non-noon literature 1: T. Sandstrome et al .: "igmailOO, a new architecture for laser pattern generators for 130nm and beyond", SPIE (USA) Vol.4409, PP 270-276 (2001) Non-patent literature 2: Luberek et al .: "Controlling CD variations in a massively parallel pattern generator", SPIE (USA) Vol.4691, PP 671-678 (2002)

Disclosure of the invention

Problems to be solved by the invention

In an exposure apparatus using the above-mentioned variable shaping mask (maskless exposure apparatus), a two-dimensional dimming device such as a multi-mirror device in which angle-variable minute mirror elements are _two- dimensionally arranged is variably shaped. It is assumed to be used as a mask. When projection exposure is performed using a variable-shaped mask as an original, the throughput (processing capacity) generally increases as the area of the pattern that can be variably formed on the variable-shaped mask in terms of the substrate to be exposed increases.

[0006] However, the above-mentioned increase in the pattern area requires an increase in the number of micro-mirror elements formed on the multi-mirror device, and furthermore, a large amount of driving signals ( It becomes necessary to supply a dimming signal according to the shape of the pattern) to the multi-mirror device at high speed.

As a result, it takes a long time to transmit a dimming signal, which reduces the S throughput and increases the size and price of the signal processing system. Is likely to rise.

[0007] The present invention has been made in view of such a problem, and even in an exposure apparatus using a variable shaping mask having a large number of mirror elements and the like, a driving signal necessary for driving the mirror elements and the like is required. The first is to provide a low-cost, high-throughput maskless exposure apparatus and maskless exposure method that achieves high-speed driving of mirror elements and the like while achieving a significant reduction and simplifies the signal transmission system. Aim.

[0008] It is another object of the present invention to provide a two-dimensional dimming device suitable for use in the maskless exposure apparatus and the maskless exposure method. Still another object of the present invention is to provide a device manufacturing technique capable of manufacturing a high-performance device using the above-described exposure technique.

Means for solving the problem

[0009] The following reference numerals in parentheses attached to the respective elements of the present invention correspond to the configuration of an embodiment of the present invention described later. However, each reference numeral is merely an example of that element, and each element is not limited to the configuration of the embodiment.

In order to solve the above-mentioned problems, a first two-dimensional dimming device (VM1) of the present invention provides a signal holding element (BD) for holding a dimming signal and a light beam to be irradiated based on the dimming signal. A dimming element array (11) in which dimming elements (MU) each comprising a dimming element (49) for dimming are arranged two-dimensionally, and a signal holding element (MU) in the dimming element (MU) A signal transfer mechanism (XC) for sequentially transferring the dimming signal held in the (BD) to the signal holding element (BD) in the adjacent dimming element (MU) along the first direction; Having a signal supply mechanism (LC, RC) for supplying the dimming signal to a signal holding element (BD) in the dimming element (MU) arranged at least at one end in the first direction And

[0010] Further, the second two-dimensional dimming device of the present invention provides a signal holding element (BD) for holding a dimming signal and a dimming device that illuminates the irradiated light beam based on the dimming signal. A dimming element array (11) in which dimming elements (MU) composed of optical elements (49) are two-dimensionally arranged, and a dimming signal held by a signal holding element (BD) in the dimming element A signal transfer mechanism (XC) for sequentially transferring a signal to a signal holding element in the light control element adjacent in the first direction, and the light control mechanism arranged at at least one end in the first direction. The signal holding element in the optical element has a signal supply mechanism (LC, RC) for supplying the dimming signal, the dimming element includes a mirror (10a), and the dimming is performed by the illuminated light beam. Is reflected in a predetermined direction by changing the inclination angle of the reflection surface of the mirror.

[0011] Therefore, in the two-dimensional dimming device (VM1) of the present invention, the dimming signal held by the signal holding element (BD) in the dimming element (MU) by the signal transfer mechanism (XC). To the signal holding element (BD) in the adjacent dimming element (MU) along the first direction. This sequentially transfers the dimming state of the irradiation light (incident light) to the dimming element (49) to the adjacent dimming element (49) along the first direction. S power

[0012] For this reason, the distribution of each dimming state formed on the dimming elements (49) arranged two-dimensionally is moved along the first direction while substantially maintaining its shape. Becomes possible. Then, when the distribution of each dimming state moves along the first direction, the signal supply mechanism (LC, RC) uses the two-dimensionally distributed dimming element (MU) of the dimming element (MU). The light control signal may be supplied only to the signal holding element (BD) in the light control element (MU) arranged at one end in the first direction.

[0013] With this, the supply amount of the dimming signal and the time required to supply the dimming signal are greatly reduced as compared with the case where the dimming signal is supplied to all of the signal holding elements (BD) in each dimming element during the movement. It is possible to reduce the processing time.

In addition, as an example, the two-dimensional dimming device (VM1) of the present invention is configured such that the two-dimensional array of the dimming elements constituting the dimming element array has a coordinate axis parallel to the first direction and the second coordinate axis. They can be arranged on grid points of a rectangular grid on an orthogonal coordinate system determined by a coordinate axis perpendicular to the direction of 1.

[0014] Further, the signal transfer mechanism (XC) of the two-dimensional dimming device of the present invention may include, for example, a charge coupling element.

Further, the signal supply mechanism (LC, RC) can include, for example, a charge-coupled device. Thus, the configuration of the signal supply mechanism can be simplified. The two-dimensional light control device of the present invention may have a structure in which the signal transfer mechanism (XC) and the light control element array (11) are stacked. This makes it possible to reduce the size of the two-dimensional dimming device, and to manufacture the two-dimensional dimming device at low cost by applying existing manufacturing techniques for semiconductor integrated circuits and the like.

In the first two-dimensional dimming device of the present invention, the dimming of the dimming element of the two-dimensional dimming device can be a change in the amplitude transmittance of the dimming element. In this case, the dimming element (49) of the two-dimensional dimming device includes, as an example, a mirror (10a), and the dimming is a change in the efficiency of reflecting the irradiated light beam in a predetermined direction. S power As an example, the efficiency can be changed by changing the inclination angle of the reflection surface of the mirror (10a). Also, as an example, the dimming The phase of the light reflected by the mirror can be changed.

A first exposure apparatus of the present invention is an exposure apparatus for exposing a desired pattern on a substrate to be exposed (W), and includes a first or second two-dimensional light control device ( VM1), a shape signal processing system (21) that supplies the dimming signal to the two-dimensional dimming device, and illumination optics that illuminates the two-dimensional dimming device with illumination light (IL0) from the light source (1) System (2, 3, 4a, 6, 7, 8), a projection optical system (13) for guiding the illumination light modulated by the two-dimensional dimming device onto the substrate, and the substrate And the first direction in the two-dimensional dimming device (VM1) according to the present invention can run in a second direction which is a direction projected onto the substrate to be exposed by the projection optical system. And a substrate stage (14).

That is, the first exposure apparatus of the present invention provides a pattern based on each dimming state formed on each of two-dimensionally arranged dimming elements (49) constituting the two-dimensional dimming device. Can be used as a scanning type exposure apparatus for exposing while exposing the substrate to be exposed (W) in the second direction. The exposure is performed while scanning each dimming state formed on each of the dimming elements arranged two-dimensionally in the first direction in synchronization with the scanning of the substrate to be exposed. be able to.

In the first exposure apparatus of the present invention, since the two-dimensional light control device (VM1) according to the present invention is used, the two-dimensionally arranged light control elements constituting the two-dimensional light control device are used. The distribution of each dimming state formed in (49) can be moved along the first direction while maintaining its shape. Then, when the distribution of each dimming state moves along the first direction, the signal supply mechanism (LC, RC) causes the dimming element (MU) of the two-dimensionally arranged dimming element (MU) to move. The dimming signal may be supplied only to the signal holding element (BD) in the dimming element (MU) arranged at one end in the first direction.

[0019] With this, the amount of dimming signals to be supplied is greatly reduced as compared with the case where new dimming signals are supplied to all the signal holding elements in each dimming element during scanning exposure, and the amount of dimming signals to be supplied is greatly reduced. The time required for supply can be significantly reduced. As a result, the speed of movement in the first direction can be increased, and the processing time required for exposing the substrate can be shortened, thereby realizing a low-cost, high-throughput maskless exposure apparatus. Can The

A second exposure apparatus of the present invention is an exposure apparatus for exposing a desired pattern on a substrate to be exposed (W), and is a first two-dimensional dimming device (VM1) according to the present invention. And the second two-dimensional dimming device of the present invention, a shape signal processing system (21) for supplying the dimming signal to the two-dimensional dimming device, and a light source ( The illumination optical system (9b, etc.) that irradiates the illumination light (I L0) from 1) to the two-dimensional light control device, and the illumination light (IL6) reflected by the two-dimensional light control device is applied to the substrate to be exposed. The projection optical system (13) and the substrate to be exposed are held, and the first direction of the two-dimensional dimming device (VM1) according to the present invention is projected onto the substrate by the projection optical system. And a substrate stage (14) movable in a second direction, the illumination optical system including the illumination optical system. The optical axis of the projection optical system light to (AX), and inclined at a predetermined angle as a whole, is to irradiate on the two-dimensional light modulating device.

[0021] Also in the second exposure apparatus of the present invention, by using the two-dimensional dimming device according to the present invention, similarly to the first exposing apparatus of the present invention, the two-dimensional dimming device is formed on the two-dimensional dimming device. It is possible to move the distribution of the dimming state at high speed along the first direction, shorten the processing time required for exposure of the substrate, and achieve a low-cost, high-throughput maskless An exposure apparatus can be realized.

In the second exposure apparatus of the present invention, the illumination light (IL5) for the two-dimensional dimming device (VM1) is tilted as a whole with respect to the optical axis (AX) of the projection optical system (13). Therefore, it is easy to separate the illumination light (IL5) from the reflected light (IL6) modulated by the two-dimensional light control device, so that the configuration of the exposure apparatus can be simplified and the cost of the exposure apparatus can be reduced. .

In each of the first exposure apparatus and the second exposure apparatus of the present invention, the two-dimensional dimming device is configured in synchronization with a change in the position of the substrate stage in the second direction. The signal transfer by the signal transfer mechanism (XC) can be performed.

In each of the first exposure apparatus and the second exposure apparatus of the present invention, the light source (1) is a pulsed light source, and the two-dimensional dimming device is synchronized with the pulsed light emission. The signal transfer can be performed by the signal transfer mechanism (XC) that constitutes the above.

Next, in the first exposure method of the present invention, the illumination light (IL2) is applied to the variable shaping mask (VM1). An exposure method for irradiating the substrate (W) to be exposed with the illumination light (IL3) adjusted by the variable shaping mask via the projection optical system (13). A first or second two-dimensional dimming device (VM1) is used, and the dimming element (MU) in the dimming element array (11) holds a dimming signal corresponding to a desired pattern. As a result, a dimming distribution corresponding to the desired pattern is formed in the dimming element array. Then, the dimming signal held by the signal holding element (BD) in the dimming element (MU) is converted by the signal transfer mechanism (XC) into the adjacent dimming element along the first direction. The signal is sequentially transferred to the signal holding element (BD) in the child (MU), and the dimming distribution formed on the dimming element array (11) is moved in the first direction. Further, in accordance with this, the exposed substrate (W) is moved along the second direction whose first direction is the direction projected onto the exposed substrate by the projection optical system (13). Exposure is performed while moving relatively to the projection optical system.

As a result, the time required to supply a dimming signal is greatly reduced as compared with a case where a new dimming signal is supplied to all of the signal holding elements in each dimming element during scanning exposure. The speed of the movement in the direction of the direction can be improved, and the processing time required for exposing the substrate can be shortened. As a result, a low-cost, high-throughput maskless exposure method can be provided.

In the second exposure method of the present invention, the illumination light (IL5) is irradiated on the variable shaping mask (VM1), and the illumination light (IL6) modulated by the variable shaping mask is projected onto the projection optical system (IL6). 13) An exposure method for irradiating a light-exposed substrate (W) through the first two-dimensional dimming device (VM1) of the present invention having a mirror (10a) as a variable shaping mask. Alternatively, the second two-dimensional light control device of the present invention is used.

[0027] Then, by causing the dimming element (MU) in the dimming element array (11) to hold a dimming signal corresponding to a desired pattern, the dimming element array is formed into the desired pattern. A corresponding dimming distribution is formed. Then, the dimming signal held in the signal holding element (BD) in the dimming element (MU) is converted by the signal transfer mechanism (XC) into the adjacent dimming element (XC) along the first direction. MU), and sequentially transfers the dimming distribution formed on the dimming element array (11) in the first direction. Move. Further, in accordance with this, the exposed substrate (W) is moved along the second direction, the first direction of which is the direction projected onto the exposed substrate by the projection optical system (13). Exposure is performed while moving relative to the projection optical system, and irradiation of the illumination light (IL5) to the two-dimensional dimming device (VM1) is performed by the light of the projection optical system. It is performed by inclining at a predetermined angle with respect to the axis (AX) as a whole.

As a result, the time required to supply a dimming signal is greatly reduced as compared with a case where a new dimming signal is supplied to all of the signal holding elements in each dimming element during scanning exposure. The speed of movement along the direction (1) can be improved, and the processing time required for exposing the substrate can be reduced. As a result, a low-cost, high-throughput maskless exposure method can be provided.

In addition, this makes it easy to separate the illumination light (IL5) to the two-dimensional dimming device (VM1) from the reflected light (IL6) dimmed by the two-dimensional dimming device, thereby reducing the cost of the exposure apparatus. Therefore, it is possible to provide a high-performance exposure method at a lower cost.

In the first and second exposure methods of the present invention, the signal transfer is performed in synchronization with a change in the position of the substrate to be exposed (W) in the second direction. Can be. Thereby, the projection optics of the dimming distribution corresponding to the desired pattern formed on the dimming element array (11) of the two-dimensional dimming device (VM1) and the substrate (W) to be exposed are obtained. Exposure can be performed while maintaining the positional relationship via the system (13) with high accuracy.

In the first and second exposure methods of the present invention, the illumination light is a pulse light generated from a pulse light source (1), and the signal transfer is performed in synchronization with the emission of the pulse light. Can be performed. Thus, it is possible to prevent the image of the pattern exposed on the substrate to be exposed (W) from deteriorating.

Next, in the first device manufacturing method of the present invention, the illumination light (IL2) is irradiated on the variable shaping mask (VM1), and the illumination light adjusted by the variable shaping mask is projected onto the projection optical system ( 13) A device manufacturing method including an exposure step of irradiating a substrate to be exposed (W) on which a device is to be formed through the step (13). By using a three-dimensional dimming device and causing the dimming element (MU) in the dimming element array (11) to hold a dimming signal corresponding to a desired pattern, A dimming distribution corresponding to the desired pattern is formed on the ray, and the dimming signal held in the signal holding element (BU) in the dimming element is converted into the dimming signal by the signal transfer mechanism (XC). A signal is sequentially transferred to a signal holding element in the dimming element adjacent along the first direction, and the dimming distribution formed on the dimming element array is moved in the first direction and the dimming distribution is moved in the first direction. The substrate to be exposed is moved relative to the projection optical system along a second direction in which the first direction is the direction projected onto the substrate by the projection optical system. Exposure is performed.

Further, in the second device manufacturing method of the present invention, the illumination light (IL2) is irradiated on the variable shaping mask (VM1), and the illumination light adjusted by the variable shaping mask is projected onto the projection optical system (13). ). (VM1) having a mirror (10a) or using the second two-dimensional dimming device of the present invention, and using the dimming element (MU) in the dimming element array (11) with a desired pattern. A dimming distribution corresponding to the desired pattern is formed in the dimming element array by holding the dimming signal corresponding to the light, and the dimming signal is held by the signal holding element (BU) in the dimming element. The dimming signal is transmitted along the first direction by the signal transfer mechanism (XC). The signal is sequentially transferred to a signal holding element in the light control element adjacent to the light control element, the light control distribution formed in the light control element array is moved in the first direction, and the substrate to be exposed is moved to the first position. Exposure is performed while moving relative to the projection optical system along a second direction in which the direction 1 is projected onto the substrate to be exposed by the projection optical system, and the two-dimensional Irradiation of the illumination light to the dimming device is performed at a predetermined angle with respect to the optical axis of the projection optical system as a whole.

According to the device manufacturing method of the present invention, since it is not necessary to manufacture a large number of masks, a device can be manufactured at low cost and with high throughput.

In the first and second device manufacturing methods of the present invention, the signal transfer may be performed in synchronization with a change in the position of the substrate to be exposed (W) in the second direction. In the first and second device manufacturing methods of the present invention, the illumination light is pulsed light generated from a pulsed light source, and the signal transfer is performed in synchronization with the emission of the pulsed light. You can do it.

The invention's effect

According to the present invention, in a so-called maskless exposure technique, in order to form a desired pattern on a variable shaping mask, the time for supplying a dimming signal corresponding to the pattern to the variable shaping mask is significantly reduced. can do.

Accordingly, the processing capability (throughput) of the maskless exposure method and the maskless exposure apparatus can be greatly improved, and the exposure apparatus and the exposure method with high productivity can be realized.

Further, by using the exposure method of the present invention in the lithographic process, it becomes possible to manufacture a device such as a semiconductor integrated circuit with high productivity without using an expensive mask, thereby reducing device manufacturing costs. Can be achieved.

Brief Description of Drawings

FIG. 1 is a diagram showing a two-dimensional light control device VM1 according to a first embodiment of the two-dimensional light control device of the present invention.

FIG. 2 is a diagram showing a control circuit mechanism 12 constituting the two-dimensional light control device VM1 of the present invention.

FIG. 3 (A) is a plan view showing a charge-coupled element MU which is a component of the two-dimensional dimming device VM1 of the present invention, and FIG. 3 (B) is a cross-sectional view thereof along line AA ′. Yes, (C) is a cross-sectional view along the line BB ′.

FIG. 4 is a diagram showing a dimming element MU and a charge coupling element MU constituting a two-dimensional dimming device VM1 of the present invention.

FIG. 5A is a diagram showing two-dimensional light control data SD corresponding to a light control distribution to be formed on the light control element array 11 of the two-dimensional light control device VM1 of the present invention, and FIG. FIG. 7 is a diagram illustrating an example of a dimming state distribution VD1 formed on the dimming element array 11, and FIG. 7C is a diagram illustrating another example of a dimming state distribution VD2 formed on the dimming element array 11. It is.

FIG. 6 is a diagram illustrating an exposure apparatus according to a first embodiment of the present invention including a two-dimensional light control device VM1 of the present invention as a variable shaping mask.

[FIG. 7] Two-dimensional light control provided with the two-dimensional light control device VM1 of the present invention as a variable shaping mask FIG. 8 is a diagram illustrating a part of an exposure apparatus according to a second embodiment of the present invention, in which illumination light IL5 is incident on a device VM1 at an angle.

FIG. 8A is a plan view showing a dimming element MU2 which is a part of a two-dimensional dimming device VM2 according to a second embodiment of the two-dimensional dimming device of the present invention, and FIG. Is a cross-sectional view along the line A-A ', and (C) is a cross-sectional view along the line B-B'.

FIG. 9 is a view showing a dimming element formed above the opening 55 and in the vicinity thereof in the second embodiment of the two-dimensional dimming device of the present invention shown in FIG.

[FIG. 10] A second embodiment of the present invention including the two-dimensional light control device VM2 of the present invention as a variable shaping mask.

FIG. 13 is a diagram illustrating an exposure apparatus according to a third embodiment.

FIG. 11 illustrates a device manufacturing method of the present invention.

Explanation of symbols

[0037] VM1, VM2: two-dimensional dimming device, MU, MU2: dimming element, 11: dimming element array, 12: control circuit mechanism, 120: signal holding transmission mechanism, XC 'XCCD (charge in X direction To CCD), LC: Left YCCD (CCD to transfer charge in Y direction), RC: Right YCC D (CCD to transfer charge in Y direction), 121: Signal processing system, CU: Charge coupled element, A1 1-5: 1st phase X transfer electrode, B15: 2nd phase X transfer electrode, C15: 3rd phase X transfer electrode, PA, PB, PC: transfer signal line, D3—5 , BD: signal holding element, 50: semiconductor substrate, 10a: micro mirror, 43: control transistor, 1: light source, 8: relay lens, IL0-10: illumination light, 13: projection optical system, 14 ... Substrate stage, 20 ... Main control system, 21 ... Shape signal processing system, 62 ... Transparent substrate, 93 ... Photoresist, 92 ... Carroe layer

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, a first preferred embodiment of the two-dimensional light control device of the present invention will be described with reference to FIGS. 1 to 4.

FIG. 1 is a bird's-eye view showing the whole of the two-dimensional dimming device VM1 of the present embodiment. In FIG. 1, the two-dimensional dimming device VM1 has two-dimensionally arranged dimming elements MU including micromirrors and the like. The light control element array 11 is provided. Each dimming element MU is arranged, for example, on a grid point of a rectangular grid on a rectangular coordinate system formed by orthogonal X axis and Υ axis in the figure. Here, the rectangular lattice is equally spaced at the first interval in the X-axis direction. The grids are arranged at regular intervals, and are arranged at equal intervals with a second interval in the Y-axis direction. Further, the first interval and the second interval may be equal. Further, a signal line Sig is connected to the control circuit mechanism 12, and a shape signal (pattern) serving as a source of a dimming distribution to be formed on the two-dimensional dimming device VM1 from a signal processing device (not shown) via the signal line Sig. (Shape signal) is supplied.

First, the control circuit mechanism 12 constituting the two-dimensional light control device VM1 of the present invention will be described with reference to FIG.

As shown in FIG. 2, the control circuit mechanism 12 includes a signal processing system 121 and a signal holding / transmission mechanism 120 including a charge-coupled device (hereinafter, referred to as “CCD”). The signal holding / transmitting mechanism 120 is formed on a semiconductor substrate (not shown), and has a CCD (Y CCD) for transferring charges in the Y direction at one end (left side) in the X direction. The right YCCD (RC), which is a CCD that transfers electric charge in the Y direction, is provided at the + side (right) end of the CCD. A plurality of CCDs, which transfer electric charge in the X direction, are arranged in parallel in the center in the X direction. XCCD (XC), which is arranged in a matrix.

[0040] The configuration of these left YCCD (LC), right YCCD (RC), and XCCD (XC) does not differ significantly from the configuration of a normal three-phase CCD.

The left YCCD (LC) is composed of a left Y transmission line DL provided on a semiconductor substrate (not shown), a first phase left Y transfer electrode Fl, F2, F3, F4, F5, and a second phase left Y formed thereon. Y transfer signal line that supplies signals to transfer electrodes G1, G2, G3, G4, G5, third phase left Y transfer electrode HI, H2, H3, H4, H5, and the first phase left Y transfer electrode F115 Q1, a Y transfer signal line Q2 for supplying a signal to the second phase left Y transfer electrode G1-5, and a Y transfer signal line Q3 for supplying a signal to the third phase left Y transfer electrode HI-5.

[0041] The right YCCD (RC) is composed of a right Y transmission line DR provided on a semiconductor substrate (not shown) and a first phase right Y transfer line ¾J1, J2, J3, J4, J5, formed thereon. 2nd phase right Y transfer electrode Kl, Κ2, Κ3, Κ4, Κ5, 3rd phase right Υ transfer electrode LI, L2, L3, L4, L5, and the above 1st phase right Y transfer electrode ΥTransfer signal line Q4, supplies the signal to the second phase right Y transfer electrode K15.Y transfer signal line Q5 supplies the signal to the third phase right Y transfer electrode L15.Y transfer It consists of signal line Q6. [0042] The XCCD (XC) includes a plurality of X transmission paths D3, D4, D5, and the like provided on a semiconductor substrate (not shown) parallel to the X direction, and a plurality of X transmission paths formed thereon in parallel to the Y direction. 1-phase X-transfer electrodes A1, A2, A3, A4, A5, 2nd-phase X-transfer electrodes Bl, B2, B3, B4, B5, 3rd-phase X-transfer electrodes C1, C2, C3, C4, C5, and above Phase: X-transfer signal line PA for supplying signals to X-transfer electrode A1-5, X-transfer signal line PB for supplying signals to second-phase X-transfer electrode Bl5, X-transfer electrode C3 for third-phase It consists of an X transfer signal line PC that supplies signals to 5.

The left Y transmission line DL and the X transmission line D35 and the like, and the right Y transmission line DR and the X transmission line D3-5 and the like are interconnected as shown in FIG. 2, and are held in each transmission line. The charged charges can move with each other. In FIG. 2, in order to show the shapes and positional relationships of the X transmission lines D3, D4, and D5 and the right Y transmission line DR, the region surrounded by the dashed lines VI and V2 includes the X transfer electrode C5 and the right Y transmission line. Force indicating a part of the transfer electrode L5 or the like deleted and displayed. Needless to say, these electrodes should be actually formed in the region surrounded by the dashed lines VI and V2.

A shape signal externally supplied to the two-dimensional dimming device VM1 of the present invention via the signal line Sig is input to the signal processing system 121, where it is converted into a dimming signal and converted to the signal line S1 or S2. The signal is supplied to the input section D0L of the left Y transmission path DL or the input section DOR of the right Y transmission path DR provided at both ends in the X direction of the signal holding / transmission mechanism 120 via.

In synchronization with the dimming signal, the signal processing system 121 generates a three-phase Y clock signal, and converts the signals of each phase into Y transfer signal lines Ql, Q4, Y transfer signal lines Q2, Q5, Y Supply to transfer signal lines Q3 and Q6. The signal processing system 121 also generates three-phase X clock signals PA, PB, and PC, and supplies them to the X transfer signal lines PA, PB, and PC, respectively.

Note that the dimming signal is supplied to the signal line S1 or the signal line S1 according to the moving direction of the dimming distribution formed on the dimming element array 11, which is a feature of the two-dimensional dimming device VM1 of the present invention. Can be supplied to one of both input sections D0L and DOR via one of S2. The details will be described later.

Hereinafter, a case will be described in which the dimming signal is supplied to the input unit D0L of the left YCCD (LC) via the signal line S1.

As a result of the input of the dimming signal, a negative first charge is formed in the input section D0L as an example corresponding to the dimming signal. This first charge is transferred to the first :! phase left Y transfer electrode F1 by the Y transfer signal line Q1. Due to the positive potential Y clock signal supplied to the left Y transfer path DL, it moves right below the first phase left Y transfer electrode F1 in the left Y transfer path DL. At this time, 弱い a weak positive potential is applied to the transfer signal line Q2. 0A 0 potential is applied to the transfer signal line Q3.

After that, the Υ direction clock signal supplied from the signal processing system 121 sequentially changes, 0 the 0 potential is applied to the transfer signal line Q1, 正 the positive potential force S is applied to the transfer signal line Q2, and the Y potential is weak to the Y transfer signal line Q3. A positive potential is applied respectively. Thus, the first charge immediately below the first left Y transfer electrode F1 moves right below the second phase left Y transfer electrode G1. Further, when the Y-direction clock signal changes and a weak positive potential is applied to the Y transfer signal line Q1, a 0 potential is applied to the Y transfer signal line Q2 and a positive potential is applied to the Y transfer signal line Q3, the first charge is generated. Moves right below the third phase left Y transfer electrode FH.

[0049] Then, one cycle of the change of the three-phase Y clock signal is completed, and the Y clock signal is in the initial state (positive potential on Y transfer signal line Q1, weak positive potential on Y transfer signal line Q2, Y transfer signal When the state returns to the state of zero potential on the line Q3), the first charge moves to the position immediately below the first phase left Y transfer electrode F2. In this state, the signal processing system 121 supplies the next dimming signal to the input section D0L of the Y transmission line DL via the signal line S1. Then, as an example, a negative second charge formed in response to this signal is held immediately below the first-phase left Y transfer electrode F1.

Therefore, in synchronization with one cycle of the change of the Y clock signal, a predetermined dimming signal is sequentially input to the input section D0L via the signal line S1, thereby forming the left YCCD (LC). Electric charges corresponding to a predetermined dimming signal can be sequentially formed immediately below the one-phase left Y transfer electrode F1-5 or the second phase left Y transfer electrode G1-5.

[0051] By repeating the above operation, at the stage where the predetermined dimming signal S1 has been formed immediately below all of the second-phase left Y transfer electrodes G1-5, the signal processing system 121 changes the XCCD (XC). Driving, the above-mentioned electric charges (light control signal) held in the left YCCD (LC) are transferred and supplied to the inside of the XCCD (XC).

[0052] That is, all the Y clock signals supplied to the left Y transfer electrodes F15, G1-5, HI-5 of the left YCCD (LC) through the Y transfer signal line Q13 are set to 0 potential or negative potential, and the X transfer is performed. A positive potential X clock signal is supplied to the:! Phase X transfer electrode A1 in XCCD (XC) through line PA. As a result, each of the second phase left Y transfer electrodes G1-5 in the left Y transmission path DL The electric charge (dimming signal) that is held immediately below, while maintaining the positional relationship (distribution) in the Y direction, is transferred to the left end of each transmission path D3—D5 in XCCD (XC). It can be moved just below the 1-phase X transfer electrode A1 and supplied here.

[0053] Since XCCD (XC) is also a charge-coupled device, three-phase X clock signals that sequentially change in the same manner as in the example shown in the left YCCD (LC) above are sequentially applied to the X transfer signal lines PA, PB, and PC. It is needless to say that by applying the voltage, the charge (light control signal) held immediately below the X transfer electrode A1 on each of the transmission paths D3-5 can be sequentially moved in the + X direction. Not even.

In this example, since the XCCD (XC) is also a three-phase CCD, the portion capable of holding one independent dimming signal is a region shown by a broken line in FIG. This is a region including a portion where one X transmission line D5 such as CU0 intersects one of the first to third phase X transfer electrodes (Al, Bl, C1).

[0055] The one charge-coupled element CU0 has a function of holding a dimming signal at three locations on the X transmission path D5 immediately below the X transfer electrodes Al, Bl, and CI. In the one-dimensional dimming device VM1, as described later, the dimming elements in the dimming element array 11 are controlled based on a dimming signal held immediately below the second-phase X transfer electrode B1. Therefore, each region formed at the intersection of the X transmission path D3-5 and the second-phase X transfer electrode B1-5 in each charge-coupled element is hereinafter referred to as a "signal holding element". To

[0056] XCCD (XC) is a signal holding element array in which signal holding elements having a charge (signal) holding function are two-dimensionally arranged, and charges (light control signals) held in the signal holding elements are stored. It functions as a signal transfer mechanism that transfers signals to adjacent signal holding elements along the X direction. In this case, the X direction can be regarded as the first direction. Further, the left YCCD (LC) functions as a signal supply mechanism that supplies a signal to each signal holding element arranged at the end in the −X direction in the XCCD (XC).

In FIG. 2, the number of charge-coupled elements is limited to five in the X-direction and five in the Y-direction for a total of 25, due to space limitations. It goes without saying that the number of elements should be overwhelmingly greater. It is desirable that the number of arrays be, for example, at least 1000 columns in at least one of the X direction and the Y direction.

Next, the details of one charge-coupled element CU in XCCD (XC) will be described with reference to FIG. explain.

FIG. 3 (A) is a view in which the X transmission line D3 in FIG. 2 and one of the X-transfer electrodes (A3, B3, C3) of the first to third phases are formed at positions where they cross each other. FIG. 2 shows an enlarged view of a charge-coupled element CU and its surrounding charge-coupled element indicated by broken lines. FIG. 3B is a cross-sectional view taken along a line A—A ′ in FIG. 3A, which is a plan view, and FIG. 3C is a sectional view taken along a line B—B ′ in FIG. 3A. A cross-sectional view is shown. Here, the directions of the XYZ coordinates shown in FIGS. 3 (A), 3 (B), and 3 (C) are equivalent to those shown in FIG.

[0059] On the surface of a semiconductor substrate 50 such as a silicon wafer, X transmission paths D2, D3, D4 and insulating regions El, E2, E3, E4 and a force S are formed in parallel with the X-axis direction. Here, the X transmission line D24 is formed of the semiconductor substrate 50 itself, while the insulating region E14 is formed by processing the semiconductor substrate 50 to form an insulating layer such as an oxide film.

[0060] On top of these, the!:! Phase X transfer electrodes A2, A3, A4, the second phase X transfer electrodes B2, B3, B4, and the third phase X transfer electrodes C2, C3, C4 are parallel to the Y direction. Formed. An insulating film such as a silicon oxide film (silicon dioxide film) is formed between each of the X transfer electrodes A2-4, B2-4, C2-4 and the transmission line D2-4. — 4, B2— 4, Ensure insulation between C2—4 and transmission line D2—4.

Here, immediately below the second-phase X transfer electrode B3 in the X transmission path D3 in the charge-coupled element CU, constitutes the signal holding element BD as described above. This is also true for other charge-coupled elements. At the position corresponding to the approximate center of each charge-coupled element BD or the like of the second phase X-direction transfer electrode B2-4, an opening 51 as a path for extracting a signal held by each charge-coupled element BD1 or the like is provided. , 52, 53, 54, 55, 56, 57, 58, 59. The electrodes B2c and B2d, the electrodes B3c and B3d, and the electrodes B4c and B4d in FIG. 3 (B) are portions of the second phase X transfer electrode B24 located at both ends of the openings 54, 55, and 56, respectively. Represents

[0062] The charge-coupled element CU can be manufactured by a lithographic process. Since the manufacturing method is almost the same as a general CCD manufacturing method, a detailed description is omitted.

Subsequently, a first embodiment of the light control device including the micromirrors constituting the light control device array 11 will be described. FIG. 4 is an enlarged view of one light control element MU included in the light control element array 11. In addition, since the signal holding element BD which is a part of the charge coupled element CU and the like also constitutes a part of the dimming element MU, FIG. 4 also shows the charge coupled element CU.

The light control element MU is composed of a micro mirror (mirror) 10a, drive electrodes 33a and 33b, base plate 32, connection electrodes 36, 37, 38, 39, 40, 41, Ehara Tori Line 42, and Ground Tori Izumi 46 , A dimming element 49 including a control transistor 43, a connection plug 48, and the like, and the signal holding element BD in the charge-coupled element CU. Note that a dimming element similar to the dimming element 49 is also formed on the other charge-coupled elements two-dimensionally arranged in the XCCD (XC) shown in FIG. It goes without saying that the dimming element array 11 arranged two-dimensionally is formed. Therefore, in this example, the signal transfer mechanism XCCD (XC) and the dimming element array 11 have a stacked structure.

In FIG. 4, for convenience of illustration, the force drawn without connecting the lower end surface 48a of the connection plug 48 to the semiconductor substrate 50 is actually connected as shown by the arrow in the figure. In addition, the lower surface 38a of the connection electrode 38 and the end 44 of the control transistor 43, and the lower surface 41a of the connection electrode 41 and the connection portion 47 that is a part of the ground wiring 46 are also illustrated separately. As shown by the arrows, these components are also connected to each other.

Hereinafter, the configuration of the light control element MU will be described together with an example of a method of manufacturing the same.

First, a first insulating film (not shown) made of silicon dioxide or the like is formed on the semiconductor substrate 50 on which the charge-coupled element CU1 is formed, and a first insulating film is formed at a position corresponding to the opening 55 in the first insulating film. Form one opening. Then, polysilicon (polycrystalline silicon) or the like is buried in the first opening to form a connection plug 48. Then, a silicon oxide film 45 is formed by oxidizing the upper end of the connection plug 48 or the like.

Subsequently, a material made of polysilicon or the like is formed (deposited) over the entire surface of the connection plug 48 and the first insulating film, and the power supply wiring 42, the ground wiring 46, and the control transistor 43 are formed. The polysilicon is removed, leaving only the parts to be removed. Then, a second insulating layer (not shown) made of a silicon oxide film or the like is formed on the power supply wiring 42, the ground wiring 46, the control transistor 43, and the like. A second opening is formed at a position corresponding to the end 44 of the transistor 43 and the connection 47 of the ground electrode 46. In this state, a first wiring material such as a metal or a low-resistance semiconductor is formed on the second insulating layer. As a result, the first wiring material is embedded in the second opening, and connection electrodes 38 and 41 are formed. Then, the connection electrodes 37 and 40 are formed by removing, by etching or the like, portions other than predetermined portions of the first wiring material formed on the second insulating layer.

Then, a third insulating layer (not shown) made of a silicon oxide film or the like is further formed on the substrate 50 on which the connection electrodes 37 and 40 are formed, and an insulating material made of, for example, silicon nitride or the like is further formed thereon. The base material 32 is formed. Then, a third opening is formed at a predetermined position of the base plate 32 and the third insulating layer, and a second wiring material such as a metal or a low-resistance semiconductor is formed on the base plate 32 in this state. . As a result, the second wiring material is buried in the third opening, and the connection electrodes 36 and 39 are formed. Then, of the second wiring material formed on the base plate 32, a portion other than a predetermined portion is removed by etching or the like, so that the drive electrode 33a, the drive electrode 33b, and the conductive line 34 are formed.

Subsequently, a high-resistance wiring material is formed on the base plate 32, and the high-resistance wiring 35 is formed by patterning. The drive electrode 33a and the drive electrode 33b are electrically connected by the high resistance wiring 35. The high-resistance wiring 35 can also be formed from the second wiring material at the same time as the processing of the drive electrodes 33a and b. In this case, by making the line width of the high-resistance wiring 35 narrower than the line width of the drive electrodes 33a, b, the electric resistance can be increased.

After that, a fourth insulating layer made of a silicon oxide film or the like is formed on the base plate 32 on which the driving electrodes 33a, b and the like are formed, and the fourth insulating layer is formed at a predetermined position on the fourth insulating layer. An opening is formed. Then, by forming a film of silicon or the like from above, the support portion 31 is formed in the fourth opening, and a silicon film constituting the mirror 10a is formed on the upper surface of the fourth insulating layer. Further, a high-reflectance metal such as aluminum or a dielectric multilayer film is formed on the silicon film to secure a high reflectivity on the surface of the mirror 10a.

Subsequently, the silicon film is patterned to form individual mirrors 10a. Then, the fourth insulating layer is removed by etching with hydrofluoric acid or the like to form a space between the base plate 32 and the mirror 1 Oa that allows the mirror 10a to tilt. On the other hand, The first to third insulating layers shown in the drawing are components of the light control element MU as insulating members that do not need to be removed.

Through the above steps, the dimming device MU is completed.

The method of manufacturing the light control element 49 and the light control element MU is not limited to the above example, and it goes without saying that the light control element 49 and the light control element MU can be manufactured using other methods.

[0072] Here, the base plate 32, the power supply wiring 42, and the ground wiring 46 are connected to other dimming elements MU constituting the dimming element array 11 which are not closed components in one dimming element MU. It is the combined component. The power wiring 42 is connected to the power wiring of another dimming element MU adjacent in the X direction at each end 42a, 42b. That is, the power supply wiring 42 constitutes a wiring in the X direction that connects a group of dimming elements arranged in the X direction at the same Y position among the dimming elements MU configuring the dimming element array 11, and has a terminating end. A predetermined power supply potential is supplied to a power supply circuit (not shown).

[0073] Similarly, the ground wiring 46 is connected to the ground wiring of another dimming element MU adjacent in the X direction and each end.

46a and 46b are connected to each other, and constitute a wiring in the X direction that connects a group of dimming elements arranged in the X direction at the same Y position, and the terminating end thereof is connected to a ground circuit (not shown) and a predetermined ground potential is formed. Supplied. Then, the insulating base plate 32 is connected to the dimming element 49 and the base plate in another dimming element MU adjacent in the X and Y directions.

The connection electrode 39 is connected to the drive electrode 33 b, and is connected (conductive) to the connection portion 47 on the ground wiring 46 via the connection electrodes 40 and 41. As a result, a predetermined ground potential is always supplied to the drive electrode 33b via the ground line 46. Further, since the micromirror 10a is electrically connected to the drive electrode 33b via the conductive line 34 via the support 31, the potential is always kept at the ground potential.

On the other hand, the drive electrode 33a is connected to the power supply electrode 42 via the connection electrodes 36, 37, 38 and the control transistor 43, and is also connected to the drive electrode 33b via the high-resistance wiring 35. The control transistor 43 is made of an n-type semiconductor or a p-type semiconductor, and constitutes a field-effect transistor (FET) having the upper end of a connection plug 48 connected via an insulating film 45 as a gate electrode. One end is connected to a power supply wiring 42 to supply a predetermined power supply potential, and the other end is connected to a connection electrode 38 via an end 44. Accordingly, the potential of the drive electrode 33a can be made variable by controlling the conduction or non-conduction of the control transistor 43. That is, when the control transistor 43 is made conductive, the drive electrode 33a is made conductive with the power supply electrode 42, and the power supply potential is supplied from this. On the other hand, if the control transistor 43 is turned off, the conduction between the drive electrode 33a and the power supply electrode 42 is cut off, and the drive electrode 33a is connected to the drive electrode 33b via the high-resistance wiring 35. The potential of a becomes the ground potential similarly to the drive electrode 33b.

Here, as an example, when the power supply potential is positive and the ground potential is negative, when the control transistor 43 is conducting, the potential of the drive electrode 33a is positive, and the potentials of the drive electrode 33b and the micromirror 10a are negative. It becomes. At this time, an electrostatic attraction is generated between the driving electrode 33a and the micro mirror 10a, and an electrostatic repulsion is generated between the driving electrode 33b and the micro mirror 10a. As a result, the micromirror 1 Oa is inclined, and the normal direction of the reflection surface changes from the + Z direction to the + X direction in the figure.

On the other hand, when the control transistor 43 is non-conductive, the potentials of the drive electrode 33a, the drive electrode 33b and the micro mirror 10a are all negative, and the potential between the drive electrode 33a and the micro mirror 10a and between the drive electrode 33b and the micro mirror During 10a, electrostatic repulsion is generated. Therefore, due to the balance of the electrostatic repulsion, the reflection surface of the micromirror 10a is oriented in a direction whose normal direction coincides with the + Z direction in the figure.

The conduction and non-conduction of the control transistor 43 is determined by the polarity (or 0) of the charge generated in the connection plug 48, that is, by the polarity of the charge held in the charge coupling element CU. In addition, the tilt angle of the micromirror 10a can be controlled by the positive or negative sign of the charge held in the signal holding element BD in the charge-coupled element CU (0). The setting of the positive and negative of the power supply potential and the ground potential is not limited to the above example. Needless to say, the positive and negative may be reversed or the other may be zero. ,.

As described above, in the present embodiment, the dimming element MU changes the angle of the micromirror 10a in the dimming element 49 according to the signal held in the signal holding element BD constituting the dimming element. That is, it is possible to change the reflection efficiency of the illumination light applied to the micromirror 10a in a predetermined direction, that is, to adjust the light. Then, as described above, the dimming element MU is formed on the entire charge transfer element CU on the XCCD (XC) shown in FIG. In the dimming device VM1, based on the dimming signal held in each signal holding element BD on the XCCD (XC), each dimming element MU on the dimming element array 11 has dimming with a desired distribution shape. A state can be formed.

Hereinafter, the formation of the dimming distribution will be described with reference to FIGS. 2 and 5.

FIG. 5 (A) is a diagram showing two-dimensional dimming data SD to be formed on each dimming element MU on the dimming element array 11, and 1-bit dimming represented by white or black in the figure. The optical signal power is arranged in m rows in the X direction and n rows in the Y direction. Here, in the above black and white, for example, white corresponds to 1 and black corresponds to 0.

The two-dimensional light control data SD may be stored in the signal processing system 121 in the control circuit mechanism 12 constituting the two-dimensional light control device VM1, or may be two-dimensional light control data. It may be stored in a signal processing device (not shown) different from the device VM1, and supplied as a shape signal from the signal processing device via the signal line Sig. The form of the storage may be an electric signal on one element of the memory or a signal such as a magnetic signal on a large-scale storage device.

Here, the number n of the two-dimensional dimming data SD in the Y direction is the number of the dimming elements MU on the dimming element array 11 in the Y direction (that is, the charge coupling arranged on the XCCD (XC)). The number m of arrays in the X direction, which is equal to the number of arrays in the Y direction of the element CU, is greater than the number of arrays in the X direction of the dimmer MU (that is, the same as the number of arrays in the X direction of the charge-coupled element CU).

[0085] In forming the dimming distribution, the signal processing system 121 first passes through the Y transfer signal line Q1-3 to the left Y transfer electrode F1-5, G1-5, F1-5 of the left YCCD (LC). Then, supply of the above-mentioned three-phase Y clock signal is started. Then, the signal processing system 121 converts the dimming data of the two-dimensional dimming data SD arranged on the right end in the X direction on the 1JX1 in the X direction into the Y direction positions Yl, Y2, Y3,. In synchronization with one cycle of the above change, one by one, as a dimming signal, is sequentially supplied to the input section DOL of the left YCCD (LC) via the signal line S1.

[0086] At this time, the dimming signal sent to the input unit DOL is, for example, a signal having a zero potential if the signal in the two-dimensional dimming data SD is 0, and a signal having a negative potential if 1 is present. I do. The signal processing system 121 repeats the above-described signal transfer for m cycles to supply all dimming data arranged in the column XI on the two-dimensional signal SD to the left YCCD (LC), and then drives the XCCD as described above. The dimming signal held in the left YCCD (LC) is transferred to the signal holding element BD in the charge-coupled element CU0 and the like arranged in the leftmost column in the XCCD (XC) and supplied.

Subsequently, the signal processing system 121 sequentially supplies the light control data arranged on the column X2 of the two-dimensional light control data SD to the input unit D0L as a light control signal in the same manner as described above. After repeating this process for m cycles, the signal processing system 121 drives the XCCD (XC) again to transfer the signal to the signal holding element BD in the charge-coupled element CU0 etc. arranged in the leftmost row on the XCCD (XC). The held dimming signal sequence is transferred to the signal holding element BD in each charge-coupled element adjacent in the + X direction, and the new signal sequence held on the left YCCD (LC) is transferred to the XCCD ( XC) Transfer to and supply the signal holding element BD in the charge-coupled elements CU0 etc. arranged in the leftmost column on the top.

If the X-direction array of each charge-coupled element CU of XCCD (XC) is defined as q columns, a series of operations including the above-described XCCD (XC) driving is repeated q times to obtain each charge-coupled XCCD (XC). The supply of the predetermined two-dimensional dimming data SD to all of the signal holding elements BD in the element CU is completed. As described above, in the present example, the signal holding element BD is also a part of each dimming element MU. As a result, a dimming distribution corresponding to each dimming signal held in the signal holding element BD in each dimming element MU is formed in each dimming element MU on the two-dimensional dimming device VM1.

Incidentally, the two-dimensional light control device VM1 of the present invention maintains a predetermined two-dimensional light control shape distribution on the light control element array 11 while maintaining its shape as much as possible. (X direction). That is, the present invention employs a CCD (XCCD (XC) described above) as the signal holding element BD in each dimming element MU and a signal supply mechanism to the signal holding element BD, so that this movement can be easily realized. There is

That is, by the above-described driving of the XCCD (XC), the dimming signal held on the signal holding element BD two-dimensionally arranged on the XCCD (XC) is changed to the signal holding element adjacent in the + X direction. Easy to move on BD. And, along with this, it is formed on the dimming element array 11. A predetermined two-dimensional dimming shape distribution can be easily moved in the + X direction. When driving the XCC D (XC), the two-dimensional dimming data is transferred to the signal holding element BD in the charge-coupled element CU0 etc. arranged at the left end of the XCCD (XC) via the YCCD (LC). It goes without saying that a new dimming signal on SD is supplied.

[0091] In order to drive XCCD (XC) in a state where a predetermined dimming signal is held on all of the signal holding elements BD, a signal holding element BD formed on the right end of XCCD (XC) (see FIG. In 2, the signal held on the second phase X transfer electrode B5 on each Y transmission path D3-5 must be removed in some way.

[0092] Therefore, the signal processing system 121 applies a positive potential to the second phase Y transfer electrode K15 in the right YCCDR C in synchronization with the transfer operation of the XCCD (XC), and The charge held on the element BD is removed in the right YCCD (RC). Then, the right YCCD (RC) is driven to sequentially move these charges to the discharge end DRE in the right transmission line DR. A ground line (not shown) is connected to the discharge end DRE, and the electric charge is recovered to the signal processing system 121 by the ground line.

FIG. 5B is a diagram illustrating an example of the dimming state distribution VD 1 formed on the dimming element array 11. As described above, the number of dimming elements MU in the dimming element array 11 is arranged in the X direction in q columns (B1 to Bq), and the number of Y dimming elements in the Y direction is arranged in n columns (D1 to Dn). The white or black display in the dimming state distribution VD1 corresponds to the two-dimensional dimming data SD, and the reflectivity force in a predetermined direction by each dimming element 49. Indicates low in part.

[0094] The dimming state distribution VD1 is the dimming distribution corresponding to the dimming data arranged in the x-direction width q column centering on column Xj in the two-dimensional dimming data SD shown in Fig. 5 (A). Is formed around the column Be, which is the center of the dimming element array 11 in the X direction. In each dimming element MU on the dimming element array 11, a dimming state corresponding to the dimming data of the corresponding part on the two-dimensional dimming data SD is formed while maintaining the arrangement in the X and Y directions. You.

On the other hand, FIG. 5 (C) shows the dimming state distribution on dimming element array 11 after the above-mentioned driving of XCCD (XC) has been performed for three cycles from the state shown in FIG. 5 (B). It is a figure showing VD2. That is, the dimming state distribution VD2 on the dimming element array 11 is the dimming state distribution shown in FIG. 5 (B). Cloth Moved in + X direction by 3 elements compared to VD1. In addition, a new dimming distribution based on the two-dimensional dimming data SD in FIG. 5A is formed in the left three systems IJ of the dimming element array 11.

As described above, in the two-dimensional dimming device VM1 of the present invention, while maintaining its shape as much as possible to form a predetermined two-dimensional dimming state distribution on the dimming element array 11, it is maintained at a predetermined level. (X direction).

Note that, in the above example, only an example in which the dimming distribution on the dimming element array 11 is moved in the + X direction is shown, but it is needless to say that this can be moved in the 1X direction. No. This means that the dimming signal is supplied via the right YCCD (RC) to the rightmost charge-coupled element CU column in the XCCD (XC), and the phase change state of the X clock signal is changed to change the charge in the XCCD (RC). (Dimming signal) can be realized by setting the transfer direction to the -X direction.

[0097] In this case, the charges held on the leftmost signal holding element BD in XCCD (XC) are discharged into left YCCD (LC), and then discharged from discharge end DLE in left transmission path DL. If it is collected in the signal processing system 121 by a ground wire (not shown).

Note that the two-dimensional light control device VM1 of the present invention may only need to be able to move the light control distribution in one direction depending on its use. In that case, both left YCCD (LC) and right YCCD (RC) are not always needed, but only one of them, which supplies the dimming signal to XCCD (XC), should be equipped.

In the above embodiment, the signal transfer mechanism XCCD (XC) and the left and right left YCCD (LC) and right YCCD (RC) serving as the signal supply mechanism are each composed of a charge-coupled device ( (CCD), but the realization means is not limited to this.For example, information stored in a predetermined storage element such as a magnetic bubble memory is stored in another storage element adjacent thereto along a predetermined direction. Other elements that can transfer the data to the device can also be used.

[0099] As an example, when a magnetic bubble memory is used, a signal reading mechanism provided in the modulating element 49 for reading a signal held in the magnetic bubble memory is also provided by the connection plug 48 and the charge effect transistor. Instead of the control transistor 43, a magnetic plug and a coil are used.

Next, a first embodiment of the exposure apparatus of the present invention and a first embodiment of the exposure method of the present invention will be described with reference to FIG. The exposure apparatus of the present embodiment irradiates the reflecting surface 10 composed of the micromirrors 10a in the reflective dimming element array 11 on the two-dimensional dimming device VM1 of the present invention with the illumination light IL2, and reflects the reflected light IL3 This is an exposure apparatus that exposes a substrate W to be exposed through a projection optical system 13, that is, a so-called scanning type maskless exposure apparatus.

[0101] Illumination light IL0 emitted from a laser such as an excimer laser or a harmonic conversion laser, or a light source 1 such as a mercury lamp or a light emitting diode is incident on the deflection element 4a via the shaping optical systems 2 and 3. The deflecting element 4a is, for example, an optical element such as a diffraction grating. The deflecting element 4a deflects the incident illuminating light IL0 in a predetermined direction as necessary, or deflects the light beam (synonymous with “light beam”) after dividing it. And inject.

[0102] The illumination light IL1 emitted from the deflection element 4a enters the optical integrator 7 such as a fly-eye lens via the relay lens 6. The illumination light emitted from the optical integrator 7 enters the beam splitter 9 via the relay lens 8 and is reflected by the split surface 9a to become the illumination light IL2 on the two-dimensional dimming device VM1 as a variable shaping mask. The light is applied to the reflective surface 10 of the reflective dimming element array 11. The reflecting surface 10 is formed by two-dimensionally arranging micromirrors 10a in the dimming device MU. The size of the reflecting surface of each micromirror 10a is, for example, about 5 to 20 μΐη.

[0103] The illumination light IL3 modulated by the dimming element array 11 passes through the division surface 9a of the beam splitter 9, is condensed by the projection optical system 13, and is exposed to a substrate W such as a semiconductor wafer or a glass substrate. Irradiated on top. At this time, on the substrate W to be exposed, a light / dark distribution corresponding to the dimming distribution on the dimming element array 11 formed corresponding to the desired pattern shape described above, that is, an image corresponding to the desired pattern shape is formed. Is formed, and this is exposed.

The direction of the reflection surface of each micromirror 10 a is determined based on the shape signal transmitted from the shape signal processing system 21 to the control circuit mechanism 12 via the signal line Sig. At this time, if the direction of the normal line of the micromirror 10a is parallel to the Z axis, the illumination light IL2 is reflected by the micromirror 10a in the + Z direction, so that the illumination light IL2 is exposed through the beam splitter 9 and the projection optical system 13. Projected onto substrate W.

On the other hand, when the reflecting surface of the micro mirror 10a is inclined and the direction of the normal is shifted from the Z axis, the illumination light IL2 is transmitted by the micro mirror 10a in the Z direction, light The light is reflected in a direction different from the direction of the axis AX and does not reach the substrate W to be exposed without being incident on the projection optical system 13 or blocked by an aperture stop (not shown) of the projection optical system 13. As a result, an illumination intensity distribution corresponding to the modulation state of each dimming element MU including the micromirror 10a on the dimming element array 11 is formed on the substrate W to be exposed, and this is exposed on the substrate W to be exposed. Is done.

The resolution of an image formed on the substrate W to be exposed is determined by the size of the micromirror 10 a included in the dimming element 49 constituting the dimming element array 11, the reduction magnification of the projection optical system 13, and its resolution. . When the size of the micromirror 10a is 20 zm square and the reduction ratio of the projection optical system 13 is 1 × 100, the resolution of the image formed on the substrate W to be exposed is equal to the pitch of the mirror (approximately two pitches). The size is expected to be 400 nm, which is 40 μm multiplied by the reduction ratio. However, this is also restricted by the numerical aperture (NA) of the projection optical system 13 and the wavelength of the light source. In other words, when the wavelength of the light source is I, the resolution of the projection optical system is determined substantially by λ / 、, and in order to obtain the above-mentioned 400 nm resolution on the substrate W to be exposed, a short wavelength light source and a large NA are required. It is necessary to use a projection optical system.

For example, when an ArF (argon.fluorine) excimer laser having a wavelength of 193 nm is used as a light source, the above resolution can be achieved by using a projection optical system having a numerical aperture of about 0.48 or more. it can. However, the arrangement pitch of the dimming elements MU on the dimming element array 11 and the resolution of the projection optical system 13 need not be set to be equal, but may be finer. Les ,.

It is to be noted that a so-called modified illumination method can be applied to an exposure apparatus using a variable shaping mask. That is, the substantial resolution of the projection optical system 13 can be improved by changing the incident angle characteristics of the illumination light to the dimming element array 11.

Therefore, in the exposure apparatus of the present example, in order to be able to change the incident angle characteristics of the illumination light IL2 irradiating the dimming element array 11, a plurality of the above-described deflection elements 4a are arranged, for example, in a turret type so as to be exchangeable. Then, the turret member 5 is rotated in accordance with the shape of the pattern to be exposed on the substrate to be exposed, and the optimum deflecting element 4a is selected from the plurality of deflecting elements 4a, 4b, etc., and loaded into the illumination optical path. In addition, a desired deflection characteristic is given to the illumination light.

The replacement of the deflection element 4a changes the deflection characteristics of the illumination light IL1 emitted from the deflection element 4a. The light intensity distribution of the illumination light IL1 incident on the optical integrator 7 is changed. On the exit surface of the optical integrator 7, a light amount distribution substantially maintaining this light amount distribution is formed, and the illumination light IL2 is applied to the dimming element array 11 with an angular characteristic based on this light amount distribution. For example, modified illumination such as annular illumination is realized.

[0110] The deformed illumination is to divide the illumination light IL2 into a plurality of partial light beams and change the incident angle of each partial light beam to the dimming element array 11, and to adjust the illumination light IL2 as a whole. It does not change the angle of incidence on the optical element array 11. This is similar to the modified illumination in an exposure apparatus using a photomask.

[0111] The substrate W to be exposed is, for example, a semiconductor wafer having a diameter of about 300 mm, whereas the exposure field of view of the projection optical system 13 is generally considerably narrower. Therefore, in order to expose a desired pattern over the entire surface of the substrate W to be exposed, it is necessary to move the substrate W during exposure. Therefore, the substrate W to be exposed is mounted on the substrate stage 14, and is movable on the surface plate 17 in the X and Y directions in the figure by a driving mechanism (not shown). Then, the position is measured by the laser interferometer 16 via the position of the movable mirror 15 installed on the substrate stage 14, and transmitted to the stage control system 18.

FIG. 1 shows a movable mirror 15 for measuring the position in the X direction of the substrate stage 14 and a movable mirror and a laser for measuring the position in the Y direction in which only the laser interferometer 16 is displayed. It goes without saying that an interferometer will also be installed.

[0112] Hereinafter, the operation of exposing the substrate W to be exposed in the exposure apparatus and the exposure method of the present embodiment will be described. In the exposure apparatus and the exposure method of the present embodiment, the exposure of the substrate W is performed while the substrate W is relatively scanned with respect to the projection optical system 13 and the two-dimensional light adjusting device VM1. Do.

First, the substrate W to be exposed is loaded on the substrate stage 14 by a substrate transport mechanism (not shown). Then, if necessary, the position of the existing circuit pattern is positioned on the substrate W to be exposed, and the position is measured by the microscope 19.

Next, the main control system 20 moves the substrate stage 14 to the exposure preparation position via the substrate stage control system 18. The exposure preparation position is based on the position information of the pattern to be exposed on the substrate W to be exposed and the position of the existing circuit pattern measured by the alignment microscope described above. The main control system 20 is determined accordingly.

Subsequently, the main control system 20 issues a command to the substrate stage control system 18 to scan (scan) the substrate stage 14 at a substantially constant speed in the −X direction. At this time, the positions of the substrate stage 14 in the X and Y directions are measured by the laser interferometer 16 and the like, and transmitted to the main control system 20 via the substrate stage control system 18. Then, the main control system 20 and the substrate stage control system 18 scan the substrate stage 14 in the 1X direction while maintaining the predetermined speed based on the measured position information.

On the other hand, the main control system 20 issues a command to the shape signal processing system 21 and variably shapes the shape signal relating to the pattern shape to be exposed on the substrate W to be exposed, which is stored in the shape signal processing system 21. Transmit to mask VM1. The shape signal is transmitted to the control circuit mechanism 12 in the two-dimensional dimming device VM1 as a variable shaping mask, and is controlled by the function of the above-described variable shaping mask (two-dimensional dimming device VM1 of the present invention). A dimming distribution corresponding to the shape of the pattern to be exposed on the substrate to be exposed W is formed thereon.

By the way, as described above, the substrate W to be exposed is scanned in the 1X direction at a substantially constant speed, so that the light control distribution formed on the light control element array 11 is maintained in a predetermined positional relationship. In order to expose the light-exposed substrate W, its dimming distribution also needs to be scanned in the + X direction. Here, the reason why the signs in the X direction are reversed is that the projection optical system 13 is assumed to be an optical system that forms a general inverted image.

[0117] As described above, the two-dimensional dimming device VM1 of the present invention has a function of moving the dimming distribution formed on the dimming element array 11 in the + X direction by driving the XCCD (XC). Therefore, this can be easily realized. Then, the main control system 20 sends a command to the two-dimensional dimming device VM1 via the shape signal processing system 21, and transmits the dimming distribution formed on the dimming element array 11 via the projection optical system 13. The substrate to be exposed is moved in the + X direction while maintaining an image forming relationship.

When the dimming distribution is moved in the X direction, the dimming distribution corresponding to the new pattern is sequentially added to one end of the dimming element array 11 in the X direction as described above. It needs to be formed. For this purpose, the signal processing system 121 in the control circuit mechanism 12 in the two-dimensional dimming device V Ml as a variable shaping mask is, as described above, a YCCD (LC, A new dimming signal is supplied to the signal holding element BD arranged at the X-direction end on XCCD (XC) via RC). Further, as required, the shape signal processing system 21 supplies a shape signal corresponding to the new pattern to the signal processing system 121 in the control circuit mechanism 12.

In the case where the projection optical system 13 is an optical system that forms an erect image, the scanning direction of the substrate W to be exposed and the scanning direction of the dimming distribution on the dimming element array 11 have the same sign. In the case of a catadioptric optical system, the scanning direction of the substrate W to be exposed may not be parallel to the scanning direction of the dimming distribution on the dimming element array 11. In this case as well, the installation direction of the two-dimensional dimming device VM1 and the installation direction of the substrate stage 14 are appropriately changed to change the running direction of the substrate stage 14, that is, the running direction of the substrate W to be exposed, as described above. The direction may be configured such that the first direction, which is the running direction of the dimming distribution on the dimming element array 11, matches the direction projected onto the substrate W to be exposed via the projection optical system 13. Needless to say.

The main control system 20 issues a light emission command to the light source 1 when the substrate stage 14 reaches a predetermined position, based on position information from the laser interferometer 16 and the like. As a result, the emission of the illumination light IL0 from the light source 1 is started, and the dimming element array 11 is irradiated with the illumination light IL2. Then, the reflected light IL3 provided with the dimming distribution corresponding to the desired pattern shape is irradiated onto the substrate W to be exposed through the projection optical system 13, and the target shape W The pattern is exposed.

When the substrate stage 14 reaches another predetermined position, the main control system 20 issues a light emission stop command to the light source 1 to interrupt the exposure. Thereafter, the substrate stage 14 is driven in the Y direction or further in the X direction to move to another exposure preparation position, and the above-described exposure operation is repeated to expose a necessary portion on the substrate W to be exposed.

Thus, the exposure operation on the substrate to be exposed W is completed. Then, the substrate W to be exposed is removed from the substrate stage 14 by a substrate transport mechanism (not shown) and carried out of the exposure apparatus. If another substrate to be exposed (not shown) is to be continuously exposed, another substrate to be exposed is loaded on the substrate stage 14 by the substrate transport mechanism, and the same exposure operation as described above is repeated. .

In each of the scanning exposures, the substrate stage 14 is always set in the same direction (for example, in the + X direction). The processing capability can be improved by performing the scanning while the substrate stage 14 is alternately scanned in the + X direction and the 1X direction.

The two-dimensional dimming device VM1, which is a variable shaping mask of the exposure apparatus of the present invention, moves the dimming distribution formed on the dimming element array 11 as described above in both the + X direction and the 1X direction. Since a possible configuration can be adopted, running exposure performed while changing the running direction alternately can be easily realized.

[0124] The variable shaping mask that has been conventionally proposed also includes, for example, a mirror array in which rotatable micromirrors are two-dimensionally arranged. The rotation angle of each micromirror is determined in accordance with an electric signal held in a storage element such as a capacitor or a memory element formed correspondingly.

[0125] However, the conventional variable shaping mask does not have the signal transfer mechanism that is a feature of the present invention.

Therefore, the signal stored in the storage element corresponding to each micromirror cannot be transferred to the adjacent storage element while maintaining its two-dimensional distribution shape. Therefore, even if the dimming distribution on the mirror array moves slightly in one direction, it is necessary to write all signals again to all the storage elements corresponding to all the micro mirrors that make up the mirror array. There is. Therefore, in the conventional variable shaping mask, the time required for moving the dimming distribution on the mirror array is relatively long, which limits the processing capability of the exposure apparatus.

On the other hand, in the exposure apparatus of the present invention, the dimming signal held in the signal holding elements BD arranged two-dimensionally on the XCC D is transmitted in the X direction by the signal transfer mechanism (XCCD (XC)). It is possible to move at a high speed, whereby the light control distribution formed on the light control element array 11 can be moved at a high speed in the X direction. For this reason, the time required for moving the dimming distribution on the dimming element array 11 is short, so that the processing capability as an exposure apparatus can be greatly improved.

[0127] In the two-dimensional dimming device VM1, the signal supply mechanism that supplies the dimming signal to one row of the signal holding elements BD arranged at the end in the X direction in the signal transfer mechanism (XCCD (XC)) is as follows. Left and right YCCD (LC, RC) are used, and dimming signal supply to YCCD (LC, RC) is signal line It shall be supplied serially (serial) via SI or S2. However, the signal supply mechanism is composed of a number of signal lines that connect the signal processing system 121 and the signal holding elements BD arranged at the left and right ends in the XCCD (XC), and the signal holding element BD A configuration in which dimming signals are supplied to the parallel circuits in parallel (in parallel) can also be adopted. As a result, the speed of supplying signals to the XCCD (XC) can be further increased, the time required for moving the dimming distribution on the dimming element array 11 is further shortened, and the processing capability as an exposure apparatus is further improved. To do it.

In the above embodiment, the position of the substrate stage 14 in the X direction and the position of the dimming distribution on the dimming element array 11 in the X direction are controlled independently of each other. The X-direction position of the dimming distribution on the dimming element array 11 may be moved in synchronization with the X-direction position 14. For example, based on the output signal of the laser interferometer 16 that measures the position of the substrate stage 14 in the X direction, the XCCD (XC) in the two-dimensional dimming device VM1 is driven in synchronization with the fluctuation of the measured value by a predetermined amount. With this configuration, it is possible to realize this.

When the light source 1 is a pulse emission type light source such as an excimer laser, the tilt angle of each micro mirror 10a on the dimming element array 11 is set to a predetermined angle during the pulse emission. It is necessary to be in the state that was done. If pulse emission is performed in the state where the tilt angle is being changed, a light and dark shape distribution different from a desired pattern is exposed on the substrate W to be exposed, and the formed image is deteriorated. is there.

Therefore, it is desirable to drive the XCCD (XC) in synchronization with the light emission timing of the pulse light source 1. That is, after the light source 1 of the pulse light emission type emits light, the XCCD (XC) is driven in synchronization with the light emission, and the signal transmission and the change of the inclination angle of each micromirror 10a are performed until the next pulse light emission. After the completion, the light emission of the pulse light source 1 may be performed again.

[0131] At this time, the XCCD (XC) is driven only for one cycle for each pulse emission, that is, the signals held in the signal holding element BD are arranged in one row in the signal holding element BD adjacent in the X direction. Not limited to transferring only minutes. Therefore, a plurality of cycles of XCC D (XC) are driven during each pulse emission, and the signal held in each signal holding element BD is The signal can be transferred to the signal holding element BD separated by a plurality of columns along the X direction.

As a result, even when a pulsed light source having a low pulsed light emission repetition rate is used, the moving speed of the dimming distribution on the dimming element array 11 in the X direction can be increased, and the processing capability of the exposure apparatus can be improved. Can be maintained and improved.

In the fine pattern exposure technology using a photomask, which is the mainstream in the current lithography technology, the so-called phase shift mask that partially changes the phase (optical path length) of transmitted light is used as the photomask. Some methods have been adopted to improve

[0133] The two-dimensional light control device VM1 of the present invention can also be used as a mask having such a phase shift effect. For this purpose, in the dimming device MU shown in FIG. 4, the micromirror 10a may be configured to be movable in the vertical direction (Z direction). The illumination light reflected by the micromirror 10a has an optical path difference that is twice as large as the amount of movement of the micromirror 10a in the Z direction, so that the two-dimensional dimming device VM1 can be used as a phase shift mask. The ability to have functions S

In order to drive the micromirror 10a in the Z direction, specifically, for example, a support member 31 that supports the micromirror 10a in the dimming element 49 shown in FIG. An opening is formed in the base plate 32 near the conductive line 34. Thus, the micromirror 10a can be moved up and down by the flexibility of the conductive line 34. Further, the drive electrodes 33a and 33b are formed integrally conductively, while at least one of the connection electrodes 39, 40 and 41 is formed of a high resistance material.

When a positive or negative potential is supplied as a power supply potential and a zero potential is supplied as a ground potential, positive or negative charges are accumulated in the micromirror 10a and the drive electrodes 33a and 33b by conduction of the control transistor 43. The micromirrors 10a move upward due to mutual repulsion. On the other hand, due to the non-conduction of the control transistor 43, the micromirror 10a and the drive electrodes 33a and 33b become 0 potential, and no electric charge is accumulated and no repulsive force is generated. For this reason, the micromirror 10a returns to its original position due to the elasticity of the conductive wire 34. Therefore, the micro mirror 10a can be moved up and down.

[0136] In the fine pattern exposure technique using a photomask, the phase shift mask As one form, a so-called halftone phase shift mask that reduces the transmittance of a given pattern on a mask not only by inverting the phase of transmitted light from that pattern with the transmitted light from another pattern, but also by using a so-called halftone phase shift mask It has been used to improve resolution and other effects. In the above-described exposure apparatus and exposure method of the present invention, for example, a configuration equivalent in principle to this halftone phase shift mask can be realized and the same effect can be obtained by the following method.

[0137] As an example, this method uses a two-dimensional dimming device VM1 in which the micromirror 10a moves up and down in the Z direction as in the above-described modification, and combines a plurality of dimming elements MU. It is assumed that the light control is performed assuming that the light control element is one light control element. This means that, for example, the four adjacent light control elements MU are regarded as one light control element, and the micromirror 1 Oa in the three light control elements MU is arranged at a position above the Z direction and remains. One of them is placed at the original position (that is, the lower position in the Z direction). Then, the difference between the positions in the Z direction is set to 1/4 of the wavelength of the reflected light beam.

[0138] At this time, assuming that the amplitude reflectance of the reflected light flux from the micromirror 10a disposed at the lower position in the Z direction is +1 (reference), the reflection by the micromirror 10a disposed at the upper position in the Z direction is assumed. The amplitude reflectance of the light beam is -1. As a result, the two light beams cancel each other out due to the interference, but the light beams having an amplitude reflectance of 1 with many mirrors remain, and the four dimming elements MU have a negative amplitude reflectance of 2 as a whole.

On the other hand, in other portions, if each of the micromirrors 10a constituting the four adjacent dimming elements MU is arranged below in the Z direction, the sum of the amplitude reflectances from these mirrors Is +4, the reflected light in the state where the micromirrors 10a are arranged at the upper position and the lower position in the Z direction has a smaller light amount and a smaller phase than the reflected light from other portions. As a result, a halftone phase shift mask can be formed.

In this case, the pitch of the arrangement of the dimming elements MU on the dimming element array 11 is such that a change in dimming state between a plurality of adjacent dimming elements MU is not exposed to the substrate W to be exposed. In addition, it is necessary to set the resolution sufficiently smaller than the resolution of the projection optical system 13, specifically, about half or less of the resolution. By the way, in the first embodiment of the exposure apparatus and the first embodiment of the exposure method of the present invention described above, each of the light components constituting the two-dimensional light control device VM1 which is a variable shaping mask is described. When the normal direction of the micromirror 10a in the optical element MU is parallel to the Z-axis, the reflected light is exposed on the substrate 13 through the projection optical system 13. In this configuration, since the illumination light IL2 to the micromirror 10a and the illumination light IL2 reflected by the micromirror 10a and irradiated onto the substrate W to be exposed are not spatially separated, the beam is used to separate both light beams. Splitter 9 required.

Therefore, as a second embodiment of the exposure apparatus of the present invention and a second embodiment of the exposure method described below, illumination of the two-dimensional light control device VM1 including the micromirror 10a, which is a variable shaping mask, is performed. An example in which the light IL2 is inclined at a predetermined angle will be described with reference to FIG.

The second embodiment of the exposure apparatus of the present invention is substantially common to the first embodiment of the exposure apparatus of the present invention in FIG. 6, and FIG. 7 shows only the changed portions.

In FIG. 7, the illumination light IL4 emitted from the relay lens 8 is reflected by the tilt mirror 9b to become the illumination light IL5, and is variably shaped with a predetermined tilt angle as a whole with respect to the optical axis AX of the projection optical system 13. The two-dimensional light control device VM1, which is a mask, is irradiated. Therefore, if the normal direction of the reflecting surface of the micromirror 10a on the two-dimensional light control device VM1 is parallel to the Z axis, the reflected light is reflected as reflected light IL7 indicated by a broken line, and is reflected by the projection optical system 13. Does not enter.

[0144] On the other hand, when the normal direction of the reflecting surface of the micromirror 10a is inclined at a predetermined angle with respect to the Z axis, the reflected light IL6 is reflected in a direction substantially parallel to the Z axis and projected. The light enters the optical system 13 and reaches the substrate W to be exposed.

Therefore, in the exposure apparatus according to the second embodiment, it is possible to spatially separate the light beam IL5 incident on the two-dimensional dimming device VM1 and the reflected light beam IL6 reaching the substrate W to be exposed, and the beam splitter 9 is unnecessary. There is an advantage that it becomes.

[0145] In the present embodiment, the above-described modified illumination can be used together. In this case, the partial illumination light divided by the same polarizing element 4a as shown in FIG. 6 enters the two-dimensional dimming device VM1 at different incident angles, but in the present embodiment, each partial illumination The bright light as a whole enters the two-dimensional light control device VM1 with the above-mentioned predetermined inclination angle. By the way, in the conventional exposure method using a photomask, particularly when deformed illumination is employed, the problem is that the shape of the pattern on the photomask is partially deformed and is exposed and transferred onto the substrate to be exposed. In order to solve this, a method of correcting the shape of an original pattern formed on a photomask in advance in consideration of the above deformation (so-called ΔPC: optical proximity effect correction) has been adopted.

In the exposure apparatus and the exposure method of the present invention as well, the shape of the dimming distribution formed on the two-dimensional dimming device VM1 is partially deformed and the In this case, the dimming distribution formed on the variable shaping mask VM1 can be formed into a shape corrected from the desired pattern shape in consideration of the deformation.

This correction is performed based on, for example, data based on the shape of a desired pattern to be exposed on the substrate W to be exposed (data such as the two-dimensional light control data SD shown in FIG. 5A). The processing can be performed by the signal processing system 21, or can be performed by the control circuit mechanism 12 in the two-dimensional dimming device VM1. This correction is to be performed in advance by a data processing device outside the exposure apparatus, and such correction is not to be performed inside the exposure apparatus.

[0149] In the exposure method using a photomask, a liquid is filled between the projection optical system and the substrate to be exposed, and the wavelength of the exposure light (illumination light) incident on the substrate to be exposed is changed by the refractive index of the liquid. A so-called immersion exposure method, which is a method of improving the resolution by only reducing the size, has also been proposed. This immersion exposure method is also applicable to the exposure apparatus and the exposure method of the present invention. That is, for example, pure water is locally provided between the substrate W to be exposed and the substrate stage 14 and the projection optical system 13. The liquid immersion exposure method can be realized by supplying a liquid such as the above or by forcibly removing the liquid.

By the way, the two-dimensional light control device of the present invention is not limited to the above-mentioned reflection type, but may have a transmission type configuration. Hereinafter, an embodiment of a transmission type two-dimensional light control device (a second embodiment of the two-dimensional light control device of the present invention) will be described with reference to FIGS.

FIG. 8 (A) is a diagram showing a part of the two-dimensional dimming device VM2. The dimming elements MU2 shown by broken lines in the drawing are three rows in the X direction and three rows in the Y direction. The arranged part It is the figure which expanded and represented. FIG. 8B is a cross-sectional view of the two-dimensional dimming device VM2 taken along line A--A ′ in FIG. 8A passing through the center of the dimming element MU2, and FIG. FIG. 8B is a cross-sectional view of the two-dimensional light control device VM2 taken along the line Β_Β ′ in FIG. 8A passing through the end of the light control element MU2.

[0151] The transmission substrate 62 constituting the two-dimensional dimming device VM2 is made of a metal oxide, metal fluoride, or metal having a large band gap (forbidden band width) of magnesium oxide, zinc oxide, or the like and a good transmittance to ultraviolet rays. It is made of a semiconductor material composed of nitride or a mixture thereof. The longest wavelength (absorption edge wavelength) of light absorbed by a semiconductor material is determined by the band gap of the semiconductor. That is, by making the band gap of the transmission substrate 62 larger than the energy per photon of light (hereinafter referred to as “target light”) assumed to be used in the two-dimensional dimming device VM2, The transmission substrate ₆₂ can be made transparent.

[0152] The semiconductor material forming the transmission substrate 62 is set so that its band gap has a slightly larger value with respect to the energy of the wavelength of the target light of the two-dimensional dimming device VM2. For example, if the wavelength of the target light is ultraviolet light of 193 nm, the energy of one photon is 6.42 [eV], so the band gap of the material constituting the transmission substrate 62 is 6.43 to 6. This can be achieved, for example, by mixing magnesium oxide and zinc oxide.

[0153] On the surface of the transmissive substrate 62, control electrodes L22, L23, L24, L32, L33, L34, L42, L43, which have transmission through the target light corresponding to each dimming element MU2, respectively. L44 is formed, and a light-shielding film 63 having a light-shielding property and an insulating property is formed in other portions. On the other hand, on the back surface of the transmissive substrate 62, a uniform counter electrode 64 having transparency to the target light is formed.

At this time, when a predetermined potential difference is applied between the control electrodes L22 to L44 and the counter electrode 64, the Franz-Keldysh effect causes the absorption edge of the semiconductor material forming the transmissive substrate 62 to be absorbed. It is possible to shift the wavelength to the longer wavelength side so that it has absorption characteristics for the target light. The two-dimensional light control device VM2 of the second embodiment utilizes this effect to control and control the transmittance and phase of each light control element MU2 (hereinafter collectively referred to as “amplitude transmittance”). It realizes an optical function.

[0155] On the light-shielding film 63 on the surface of the transmissive substrate 62, signal wiring and the like for applying a predetermined potential to the control electrodes L22 to L44 are formed. Here, the transmission of the dimming signal to each dimming element MU2 and the like including the control electrodes L22 to L44 is also performed by the CCD in the two-dimensional dimming device VM2 of the present embodiment as in the first embodiment. Device shall be used.

That is, the X transmission lines U2, U3, and U4 for holding the dimming signal and transmitting the dimming signal in the X direction are provided on the light shielding film 63 in the Y direction interval of the arrangement of the control electrodes L22 to L44. , Forming U5. This is performed by forming a semiconductor film such as silicon on the light-shielding film 63, or by polycrystallizing or single-crystallizing it by annealing (heat treatment) or the like. Then, the first phase X transfer electrodes R2, R3, R4, the second phase X transfer electrodes S2, S3, S4 and the third phase X transfer electrodes Tl, T2, T3, T4 are formed substantially parallel to the Y direction. I do.

[0157] As a result, a CCD (XCCD) for transferring charges in the X direction is formed on each transmission path U2-5, and the first, second, and third-phase X transfer electrodes R2-4, By sequentially applying a three-phase X clock signal to each electrode of S2-4, T1-4, each X transfer electrode R2-4, S2-4, T1-4 immediately below each transmission line U2-5 It is possible to transfer the retained charge in the X direction

[0158] Also in the second embodiment, a portion of the X transmission path D3 that is directly below the second phase X transfer electrode S2-4 is hereinafter referred to as a "signal holding element". This is a part corresponding to the signal holding elements BD2, BD3, BD4 in FIG. 3 (C). Also in the present embodiment, the openings 71, 72, 73, 74, 75, 76, 77, at the center of the second phase X transfer electrodes S2-4 at the positions where they intersect the X transmission path U2-5. 78, 79 force S is provided, and the dimming signal, which is the electric charge held by the signal holding element on the X transmission path U2-5 and directly below the second phase X transfer electrode S24, passes through the opening 71-79. Is read through. The electrodes S2c and S2d, the electrodes S3c and S3d, and the electrodes S4c and S4d in FIG. 8C are located at both ends of the openings 74, 75, and 76 in the second-phase X transfer electrode S2-4, respectively. Indicates the part that is located.

[0159] Above the openings 71-79 (in the + Z direction), an amplification mechanism for reading a signal from the signal holding element, amplifying the signal, and applying the amplified signal to the control electrode L2244 is provided. Although this amplification mechanism is omitted in FIG. 8 to avoid complication, this will be described below with reference to FIG. First, a connection plug is formed at the position of the opening 75. The lower end of this connection plug is connected directly to the signal holding element BD3 (see FIG. 8 (C)) or via an insulating film, and an insulating film such as a silicon oxide film is formed on the upper end of the connection plug. Then, control transistors 85 and 86, a power supply electrode 83, and a ground electrode 84 made of polysilicon or the like are formed. Note that these functions are the same as the functions of the corresponding members in the above-described first embodiment. One end 85 of the control transistors 85 and 86 is connected to the power supply electrode 83, and the other end 86 is connected to the ground electrode 84 via a separately formed high resistance member 88. Further, a local wiring 87 is connected to the other ends 86 of the control transistors 85 and 86, and the other end of the local wiring 87 is connected to the control electrode L33.

[0160] Thus, the potential applied to the control electrode L33 can be changed according to the charge (light control signal) held in the signal holding element BD3 immediately below the connection plug. That is, the amplitude transmittance of each dimming element MU2 arranged in two dimensions can be changed according to the dimming signal held in the signal holding element BD3.

In this case, one of the dimming elements is a connection plug (not shown), a control transistor 85, 86, a high-resistance member 88, a local wiring 87, a control electrode L33, and a part facing the counter electrode 64. And a member such as a part of the transmission substrate 62 sandwiched between the control electrode L33 and the counter electrode 64. One of the dimming elements MU2 is constituted by one of the dimming elements and the signal holding element BD3.

[0161] The dimming elements MU2 are two-dimensionally arranged on the transmission substrate 62 to form a dimming element array. The signal holding elements BD3 are also arranged two-dimensionally, and the XCCD, which functions as a signal transfer mechanism, transfers the charges (light control signals) held in each signal holding element BD3 to each signal. It is possible to sequentially transfer the signal to the signal holding elements BD2 and BD4 adjacent to the holding element BD3 in the X direction.

In the two-dimensional dimming device VM2 of the second embodiment, the configuration other than the dimming element MU2 and the mechanism other than the signal transfer mechanism in the X direction is the same as the two-dimensional dimming device of the first embodiment. It can be configured in the same way as the dimming device VM1. That is, also in the two-dimensional light control device VM2 of the second embodiment, the control circuit mechanism has the control circuit device shown in FIG. Similarly to the configuration 12, a left YCCD (LC) and a right YCCD (RC) are provided as signal supply mechanisms at both ends of the dimming element array composed of the dimming element MU2, and a signal processing system 121 similar to FIG. It can be configured by providing.

Next, an exposure apparatus according to the third embodiment of the present invention and an exposure method according to the third embodiment using the transmission type two-dimensional dimming device VM2 according to the second embodiment will be described with reference to FIG. This will be explained using. The exposure apparatus of the present embodiment is also a so-called running type maskless exposure apparatus. Note that members denoted by the same reference numerals as those shown in FIG. 6 showing the first embodiment are the same members as those shown in the first embodiment, and a description thereof will be omitted.

In FIG. 10, the illumination light IL8 emitted from the relay lens 8 is reflected by the mirror 60 to become the illumination light IL9, and is incident on the above-described transmission type two-dimensional dimming device VM2. The illumination light IL10 modulated by the amplitude transmittance distribution formed by the two-dimensional dimming device VM2 is applied to the substrate W to be exposed through the projection optical system 13, and thereby the two-dimensional dimming is performed on the substrate W to be exposed. The illumination light having a desired intensity distribution formed by the device VM2 is exposed.

Also in this example, the size of each dimming element MU2 on the two-dimensional dimming device VM2 is, for example, about 5 to 20 μΐη angle, the wavelength of the illumination light IL8 and the aperture of the projection optical system 13. The numbers are the same as in the exposure apparatus of the first embodiment. Also, the exposure operation on the substrate W to be exposed is the same as that of the exposure apparatus of the first embodiment and the exposure method of the first embodiment. While scanning the dimming distribution (amplitude transmittance distribution) to be formed in at least one of the + X direction and the 1X direction in the figure, the substrate stage 14 is exposed to light through the projection optical system 13 in the scanning direction. This is performed while running in the direction in which the substrate W is projected. The shape signal processing system 21 transmits the shape of the pattern to be exposed on the substrate W to be exposed to the two-dimensional dimming device VM2 during the scanning exposure.

Next, a device manufacturing method using the exposure apparatus and the exposure method of the present invention will be described with reference to FIG.

FIG. 11A is a cross-sectional view showing a substrate W to be exposed such as a semiconductor wafer where a pattern 91 such as a part of an integrated circuit is formed. Is formed with an insulating film such as a silicon oxide film.

[0167] Then, an overlying film 92 such as an insulating film made of a silicon oxide film is further formed on the C layer. It is formed (deposited) by a VD method (chemical vapor deposition method) or the like, and a photoresist (photosensitive material) 93 is formed on the film to be processed 92 by spin coating or the like.

The substrate W to be exposed in this state is loaded into the exposure apparatus of the present invention, and a desired pattern shape is exposed by the above exposure. At the time of this exposure, the position of the existing circuit pattern 91 on the substrate to be exposed W is measured by the alignment microscope 19, and a desired pattern is exposed while maintaining a predetermined positional relationship with the existing pattern 91.

After this exposure, by developing the photoresist 93 on the substrate W to be exposed, as shown in FIG. 11B, the photoresist 93 becomes a resist corresponding to the portion where the desired pattern has been exposed. Processed into pattern 93p. As the photoresist 93, any of a positive type in which an exposed portion is removed and a negative type in which an unexposed portion is removed may be used.

Subsequently, using the resist pattern 93p as an etching mask, the processing target layer 92 is etched, and as shown in FIG. 11C, the processing target layer 92 is processed into a pattern 92p following the shape of the resist pattern 93p. Thereafter, the resist pattern 93p is removed by a solvent or a photochemical reaction or the like, and the processing (patterning step) of the desired pattern 92p of the processing target layer 92 is completed.

[0170] In a highly integrated and highly functional device, the device is formed by repeating the above-described film forming and patterning steps. At this time, it is needless to say that the processed layer 92 may be a conductive layer of a metal, a semiconductor, or the like, which is not limited to the insulating film of the above example. Further, the layer to be added is not limited to the film formed on the substrate W to be exposed, and may include a step of processing the substrate W to be exposed into a predetermined shape.

[0171] The exposure method of the present invention can be used not only for manufacturing a device but also for manufacturing a photomask.

As described above, the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention. In addition, the entire disclosure content of Japanese Patent Application No. 2004-048984 filed on Feb. 25, 2004, including the specification, claims, drawings, and abstracts, is incorporated in the present application by reference in its entirety. .

Industrial applicability

According to the two-dimensional dimming device of the present invention, based on the input shape signal, A two-dimensional light control distribution can be formed on the constituent light control element array, and the distribution can be moved in one direction at high speed. Thus, for example, when used as a variable shaping mask of a scanning type maskless exposure apparatus, its dimming distribution can be moved at high speed to the scanning method of the exposure apparatus, and the processing capability of the exposure apparatus can be increased. it can.

[0173] Further, according to the exposure apparatus of the present invention, in a scanning type maskless exposure apparatus, by using the two-dimensional dimming device of the present invention as a variable shaping mask, the exposure formed on the variable shaping mask. The light distribution can be moved in one direction at high speed. Accordingly, the processing capability of the exposure apparatus can be improved, and the productivity of devices such as semiconductor integrated circuits can be improved.

Further, according to the exposure method of the present invention, by using the two-dimensional light control device of the present invention as a variable shaping mask, the light control distribution formed on the variable shaping mask can be changed in one direction. It is possible to move at high speed. Therefore, the processing capability of the exposure apparatus can be increased, and the productivity of devices such as semiconductor integrated circuits can be improved.

Further, according to the device manufacturing method of the present invention, since the device is manufactured by the above-described high-productivity exposure method of the present invention, the productivity of the device can be improved and the production cost of the device can be reduced. It becomes possible. Further, the production cost of the device can be further reduced in combination with the effect of reducing the mask cost, which is a feature of the maskless exposure method.

Claims

The scope of the claims

[1] A dimming element in which a dimming element including a signal holding element for holding a dimming signal and a dimming element for dimming a light beam to be irradiated based on the dimming signal is two-dimensionally arranged. An array; a signal transfer mechanism for sequentially transferring the dimming signal held by the signal holding element in the dimming element to a signal holding element in the dimming element adjacent in a first direction; A two-dimensional light control device, comprising: a signal supply mechanism for supplying the light control signal to a signal holding element in the light control element arranged at at least one end in a first direction.

[2] The two-dimensional array of the light control elements constituting the light control element array is on an orthogonal coordinate system defined by a coordinate axis parallel to the first direction and a coordinate axis perpendicular to the first direction. The two-dimensional light control device according to claim 1, wherein the two-dimensional light control device is arranged on lattice points of a rectangular lattice.

3. The two-dimensional dimming device according to claim 1, wherein the signal transfer mechanism includes a charge-coupled device.

[4] The two-dimensional dimming device according to claim 1, wherein the signal supply mechanism includes a charge-coupled device.

[5] The two-dimensional light control device according to claim 1, wherein the signal transfer mechanism and the light control element array have a stacked structure.

6. The two-dimensional light control device according to claim 1, wherein the light control is a change in an amplitude transmittance of the light control element.

7. The two-dimensional light control device according to claim 1, wherein the light control element includes a mirror, and the light control is a change in efficiency of reflecting the irradiated light beam in a predetermined direction.

[8] The two-dimensional light control device according to claim 7, wherein the change of the efficiency is performed by changing a tilt angle of a reflection surface of the mirror.

[9] The two-dimensional light control device according to claim 7, wherein the light control changes a phase of light reflected by the mirror.

[10] A signal holding element for holding a dimming signal and a light beam to be irradiated are determined based on the dimming signal. A dimming element array in which dimming elements composed of dimming elements for dimming are two-dimensionally arranged; and a dimming signal held by a signal holding element in the dimming element, along a first direction. A signal transfer mechanism for sequentially transferring a signal to a signal holding element in the adjacent light control element; and a light control element in the light control element arranged at at least one end in the first direction. Having a signal supply mechanism for supplying signals,

The two-dimensional dimming device, wherein the dimming element includes a mirror, and the dimming is performed by changing an inclination angle of a reflection surface of the mirror so as to reflect the irradiated light beam in a predetermined direction. .

[11] The two-dimensional arrangement of the light control elements constituting the light control element array is based on an orthogonal coordinate system defined by coordinate axes parallel to the first direction and coordinate axes perpendicular to the first direction. 11. The two-dimensional light control device according to claim 10, wherein the two-dimensional light control device is arranged on lattice points of a rectangular lattice.

12. The two-dimensional light control device according to claim 10, wherein the signal transfer mechanism includes a charge-coupled device.

13. The two-dimensional light control device according to claim 10, wherein the signal supply mechanism includes a charge-coupled device.

14. The two-dimensional light control device according to claim 10, wherein the signal transfer mechanism and the light control element array have a stacked structure.

[15] An exposure apparatus for exposing a desired pattern on a substrate to be exposed,

A two-dimensional light control device according to any one of claims 1 to 14,

A shape signal processing system for supplying the light control signal to the two-dimensional light control device; an illumination optical system for irradiating the two-dimensional light control device with illumination light from a light source; A projection optical system for guiding the illumination light onto the substrate to be exposed,

A substrate stage that holds the substrate to be exposed and is movable in a second direction in which the first direction is projected onto the substrate by the projection optical system. Exposure equipment.

16. The exposure apparatus according to claim 15, wherein the signal transfer of the two-dimensional light control device is performed in synchronization with a change in the position of the substrate stage in the second direction.

17. The exposure apparatus according to claim 15, wherein the light source is a pulse light emission type light source, and performs the signal transfer of the two-dimensional light control device in synchronization with the pulse light emission.

[18] An exposure apparatus for exposing a desired pattern on a substrate to be exposed,

A two-dimensional dimming device according to any one of claims 7 to 14,

A substrate stage that holds the substrate to be exposed and that can scan in a second direction in which the first direction is projected onto the substrate by the projection optical system.

An exposure apparatus, wherein the illumination optical system irradiates the two-dimensional dimming device with the illumination light inclined at a predetermined angle with respect to an optical axis of the projection optical system as a whole.

19. The exposure apparatus according to claim 18, wherein the signal transfer of the two-dimensional light control device is performed in synchronization with a change in the position of the substrate stage in the second direction.

20. The exposure apparatus according to claim 18, wherein the light source is a pulse light emission type light source, and performs the signal transfer of the two-dimensional light control device in synchronization with the pulse light emission.

[21] An exposure method of irradiating illumination light to a variable-shaped mask, and irradiating the illumination light adjusted by the variable-shaped mask to a substrate to be exposed via a projection optical system,

The two-dimensional dimming device according to any one of claims 1 to 14, wherein the variable shaping mask is used,

Forming a dimming distribution corresponding to the desired pattern on the dimming element array by causing the dimming element in the dimming element array to hold a dimming signal corresponding to a desired pattern; and The dimming signal held in the signal holding element in the dimming element, The signal transfer mechanism sequentially transfers a signal to a signal holding element in the light control element adjacent to the light control element along the first direction, and transfers the light control distribution formed on the light control element array to the first direction. Move to

The substrate to be exposed is moved relative to the projection optical system along a second direction in which the first direction is projected onto the substrate by the projection optical system. Exposure method characterized by performing exposure while performing.

22. The exposure method according to claim 21, wherein the signal transfer is performed in synchronization with the movement of the substrate to be exposed in the second direction.

[23] The illumination light is pulsed light emitted from a pulsed light source,

22. The exposure method according to claim 21, wherein the signal transfer is performed in synchronization with emission of the pulse light.

[24] An exposure method, which comprises irradiating illumination light onto a variable shaping mask, and irradiating the illumination light adjusted by the variable shaping mask to a substrate to be exposed via a projection optical system,

The two-dimensional light control device according to any one of claims 7 to 14, wherein the variable shaping mask is used.

Forming a dimming distribution corresponding to the desired pattern on the dimming element array by causing the dimming element in the dimming element array to hold a dimming signal corresponding to a desired pattern; and Transferring the dimming signal held by the signal holding element in the dimming element to the signal holding element in the dimming element adjacent in the first direction by the signal transfer mechanism; Moving the dimming distribution formed on the optical element array in the first direction,

The substrate to be exposed is moved relative to the projection optical system along a second direction in which the first direction is projected onto the substrate by the projection optical system. While exposing while

An exposure method, wherein the irradiation of the illumination light to the two-dimensional dimming device is performed at a predetermined angle with respect to an optical axis of the projection optical system.

25. The exposure method according to claim 24, wherein the signal transfer is performed in synchronization with the movement of the substrate to be exposed in the second direction.

26. The exposure method according to claim 24, wherein the illumination light is pulsed light emitted from a pulsed light source, and the signal transfer is performed in synchronization with the emission of the pulsed light.

[27] A device manufacturing method including an exposure step of irradiating illumination light to a variable-shaped mask and irradiating the illumination light adjusted by the variable-shaped mask to a substrate to be formed on which a device is to be formed via a projection optical system. The method,

In the exposing step,

Using the two-dimensional dimming device according to any one of claims 1 to 14 as the variable shaping mask,

Forming a dimming distribution corresponding to the desired pattern on the dimming element array by causing the dimming element in the dimming element array to hold a dimming signal corresponding to a desired pattern; and The dimming signal held by the signal holding element in the dimming element is sequentially transferred by the signal transfer mechanism to a signal holding element in the adjacent dimming element along the first direction, and the dimming is performed. While moving the dimming distribution formed in the optical element array in the first direction,

The substrate to be exposed is moved relative to the projection optical system along a second direction in which the first direction is projected onto the substrate by the projection optical system. A method for manufacturing a device, comprising: performing exposure while performing exposure.

28. The device manufacturing method according to claim 27, wherein the signal transfer is performed in synchronization with the movement of the substrate to be exposed in the second direction.

[29] The illumination light is pulsed light emitted from a pulsed light source,

28. The device manufacturing method according to claim 28, wherein the signal transfer is performed in synchronization with the emission of the pulse light.

[30] A device manufacturing method including an exposure step of irradiating illumination light onto a variable shaping mask and irradiating the illumination light adjusted by the variable shaping mask onto a substrate to be exposed on which a device is to be formed via a projection optical system. The method,

In the exposing step,

The two-dimensional light control device according to any one of claims 7 to 14, wherein the variable shaping mask is used. Use vice,

Forming a dimming distribution corresponding to the desired pattern on the dimming element array by causing the dimming element in the dimming element array to hold a dimming signal corresponding to a desired pattern; and The dimming signal held by the signal holding element in the dimming element is sequentially transferred by the signal transfer mechanism to a signal holding element in the adjacent dimming element along the first direction, and the dimming is performed. Moving the dimming distribution formed on the optical element array in the first direction,

A method for manufacturing a device, comprising: irradiating the two-dimensional dimming device with the illumination light while inclining at a predetermined angle with respect to an optical axis of the projection optical system as a whole.

31. The device manufacturing method according to claim 30, wherein the signal transfer is performed in synchronization with the movement of the substrate to be exposed in the second direction.

[32] The illumination light is pulsed light emitted from a pulsed light source,

31. The device manufacturing method according to claim 30, wherein the signal transfer is performed in synchronization with emission of the pulse light.