JP2000284494A - Exposure device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exposure device constituted so that an optical pattern can be transferred on a substrate with a high throughput even when the patterns whose resolution to be required are mutually different coexist. SOLUTION: This exposure device is provided with a substrate stage for placing the substrate on which the pattern is formed according to different design rules, a 1st exposure optical system 2A, a 2nd exposure device 4A and an exposure control part. Then, the optical systems 2A and 4A having the different resolution are constituted by providing the optical system 2A with a 1st light source ML1 emitting a light beam having 1st wavelength and providing the optical system 4A with a 2nd light source ML2 emitting a light beam having 2nd wavelength being different from the 1st wavelength. By the exposure control part, the optical systems 2A and 4A are selectively switched so that the optical patterns formed based on the different design rules can be projected on the substrate with the different resolution corresponding to the respective design rules from the optical systems 2A and 4A.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus, and is particularly used for manufacturing a liquid crystal display.

[0002]

2. Description of the Related Art In recent years, liquid crystal display devices have attracted attention as flat panel displays that achieve light weight and low power consumption. Among these, active matrix type liquid crystal display devices have features such as thinness, light weight, low voltage driving, and easy colorization, and are recently used in personal computers, word processors, and personal digital assistants. .

The active matrix type liquid crystal display device using a thin film transistor (hereinafter also referred to as a TFT (Thin Film Transistor)) as a switching element in a pixel portion has a high display quality and low power consumption, and thus has been actively developed. Is being done.

There are two types of TFTs, an amorphous silicon TFT using amorphous silicon and a polysilicon TFT using polysilicon. Polysilicon TFT
Has a mobility of 10 to 1 more than an amorphous silicon TFT.
There is an advantage that it is about 00 times higher. For this reason, the polysilicon TFT is optimal as a pixel switching element. Also, in recent years, the polysilicon TFT has been used as a component of a peripheral driving circuit, and as a result,
As shown in FIG. 23, a pixel portion 120 corresponding to a display portion and peripheral driving circuits 130a and 130b are formed on the same substrate 101, and a liquid crystal display device 100 integrated with a pixel portion and a driving circuit has been actively developed. ing.

Generally, when manufacturing a liquid crystal display device, an exposure device for transferring a circuit pattern necessary for controlling the liquid crystal onto a glass substrate is used. This exposure apparatus
An exposure optical system for transferring a fine pattern onto a substrate,
It is composed of an alignment system for positioning the reticle (exposure mask) and the substrate with high accuracy, and an automatic transport system for automatically transporting the reticle and the substrate.

[0006]

In the above-described liquid crystal display device 100 of the integrated pixel portion and drive circuit type, the pixel portion 12
Since the 0 and the terminal section 140 are relatively simple circuit patterns, a large exposure area per shot can be obtained by using a low-resolution (eg, about 2 μm) exposure optical system. On the other hand, the peripheral drive circuits 130a, 130
Although b is a relatively complicated circuit pattern, a low-resolution exposure optical system is currently used. However, the control unit 150 and memories and logic circuits that are expected to be provided on the same substrate in the future are complicated circuit patterns, and it is necessary to use a high-resolution (for example, about 0.6 μm) exposure optical system. The exposure area per shot is small. In the future, if the TFT is miniaturized, the driving circuit 1
30a and 130b also require high resolution.

For this reason, when the pixel section 120 and the terminal section 140 are also exposed using a high-resolution exposure apparatus, there is a problem that the exposure area per shot is small and the throughput is low. For example, when the substrate size is 550 mm × 6
In the case of 50 mm, the throughput of the exposure process is 8
Minutes.

In order to improve the throughput, it is conceivable to use a low-resolution exposure apparatus and a high-resolution exposure apparatus. However, the time required for mounting and positioning the substrate on the stage of each exposure apparatus is different. However, there is a problem that the throughput is still low.

The present invention has been made in view of the above circumstances, and has an exposure optical system having exposure optical systems of different resolutions and having as high a throughput as possible even when high-resolution and low-resolution patterns are mixed. The purpose is to provide.

[0010]

An exposure apparatus according to the present invention comprises a first exposure optical system having a first resolution and a second exposure optical system having a second resolution different from the first resolution. A system, a substrate stage on which a substrate is mounted, and an optical pattern based on different design rules are provided on the substrate at different resolutions according to the respective design rules.
Exposure control means for selectively switching the first exposure optical system and the second exposure optical system so as to be projected from each of the exposure optical system and the second exposure optical system,
Is provided.

In the above exposure apparatus, the first exposure optical system has a first light source for emitting a first light having a first wavelength, and the second exposure optical system has a first light source. It is preferable to have a second light source that emits second light having a second wavelength different from the second wavelength. Thus, the first and second exposure optical systems having different resolutions can be obtained.

The first and second lights are preferably laser lights.

[0013] The first and second light sources may include:
A solid laser is preferred.

In the exposure apparatus, the first and second exposure optical systems share a third light source that emits a third light having a third wavelength, and the first exposure optical system And a wavelength for converting the third light emitted from the third light source into a fourth light having a fourth wavelength different from the third wavelength. It is preferable to include conversion means.

The wavelength converting means preferably includes a harmonic generating element or a dye laser.

In the above exposure apparatus, the first exposure optical system has a first numerical aperture, and the second exposure optical system has a second numerical aperture different from the first numerical aperture. , The first having different resolutions from each other
In addition, the second exposure optical system can be obtained.

In the exposure apparatus according to the present invention, the first exposure optical system is arranged at a first position, the second exposure optical system is arranged at a second position, and the substrate stage is A first substrate stage on which the optical pattern can be projected by the first exposure optical system, and a second substrate stage on which the optical pattern can be projected by the second exposure optical system; And a stage drive unit for driving the second substrate stage, and drive control for controlling the stage drive unit so as to stop the first and second substrate stages at the positions of the first and second exposure optical systems. And a substrate position detection unit that is provided on one of the first and second exposure optical systems and that detects a position of a substrate placed on a substrate stage of the one exposure optical system. Department and this An exposure data storage unit configured to store an output of a plate position detection unit and exposure data of the substrate, wherein the exposure control unit determines the first data based on the data stored in the exposure data storage unit. Preferably, the pattern is transferred onto the substrate by controlling the second exposure optical system.

Further, in the exposure apparatus according to the present invention,
The first exposure optical system is disposed at a first position, the second exposure optical system is disposed at a second position, and the substrate stage is provided with the optical pattern by the first exposure optical system. Is preferably movable between the first position where the optical pattern can be projected and the second position where the optical pattern can be projected by the second exposure optical system.

Further, each of the first exposure optical system and the second exposure optical system is moved to a position where the optical pattern can be projected on the substrate mounted on the substrate stage. It may be possible.

Further, the exposure apparatus further comprises holding means for holding an exposure mask, and the first portion of the exposure mask held by the holding means is used to project the light from the first exposure optical system. More preferably, an optical pattern is formed, and the optical pattern projected from the second exposure optical system is formed using a second portion of the exposure mask held by the holding means.

[0021]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a conceptual view showing an exposure optical system in a main part of an exposure apparatus according to a first embodiment of the present invention. As shown in the figure, the feature of the present embodiment is that it has a low-resolution exposure optical system 2A and a high-resolution exposure optical system 4A, and each exposure optical system has a light source that emits light of a different wavelength. is there.

In this embodiment, a mirror projection type exposure optical system is used as the low resolution exposure optical system 2, and a stepper type exposure optical system is used as the high resolution exposure optical system 4. However, these combinations are optional, and as will be described later, as long as they have different resolutions, the exposure optical system can be configured using only the stepper system or only the mirror projection system.

Here, the exposure optical system of the stepper type will be briefly described. FIG. 2 is a schematic configuration diagram showing an example of a stepper type exposure optical system. The exposure optical system shown in FIG. 1 includes a light source 51 such as a high-pressure mercury lamp that emits ultraviolet light.
, An elliptical mirror 52, mirrors 53 and 55, a fly-eye lens 54, a condenser lens 56, and a projection lens 57. The ultraviolet light emitted from the light source 51 is condensed by the elliptical mirror 52, then reflected by the mirror 53, the optical path is deflected, and passes through the fly-eye lens 54, whereby the in-plane illuminance is made uniform. Thereafter, the ultraviolet light is reflected again by the mirror 55 and is
Through the reticle R1. Ultraviolet light corresponding to the pattern formed on the reticle R1 passes through the reticle R1, passes through the projection lens 57, and is projected on a photoresist film on the substrate S placed on the substrate stage.

As an advantage of the stepper type exposure optical system,
Since the reticle and the substrate are separated via the projection optical system, the reticle and the substrate do not come into contact with each other, so that a high yield can be obtained, a relatively inexpensive small-sized reticle can be used, and a high-resolution lens is used. As a result, excellent resolution can be easily realized. On the other hand, the disadvantage is that the exposure area per shot is small, so that the throughput is low, and when the size of the substrate is large, divided exposure is necessary, and color unevenness is likely to occur at the joint between shots. No.

Next, the exposure optical system of the mirror projection system will be described. FIG. 3 is a schematic configuration diagram showing an example of a mirror projection type exposure optical system.
The exposure optical system shown in the figure includes an illumination optical system (not shown) including a light source, a trapezoidal mirror 61, a concave mirror 62 and a convex mirror 63. The ultraviolet light emitted from the light source is
After passing through the illumination optical system, it becomes an arc-shaped illumination light beam having little optical aberration and irradiates the reticle R2. Ultraviolet light is selectively transmitted according to the pattern on the reticle R2, its optical path is deflected by 90 ° by the reflection surface of the trapezoidal mirror 61, and is again irradiated and reflected on the concave mirror 62 via the concave mirror 62 and the convex mirror 63. . The light path of the reflected light is then deflected by 90 ° again by the reflection surface of the trapezoidal mirror 61 and projected on the photoresist film on the substrate S to form a pattern image of the reticle R2. In this mirror projection system, the illuminating light flux imaged on the reticle R2 has an arc shape with a predetermined width W, so that the reticle R2 and the substrate S are scanned integrally to transfer the entire image of the reticle onto the substrate S. You.

As an advantage of the mirror projection system, first, since the reticle and the substrate are not in contact with each other as in the case of the stepper system, a high yield can be obtained, and chromatic aberration does not occur because a reflection optical system is used. In addition, since light sources of multiple wavelengths can be used, and thereby interference between the surface of the resist and the surface of the substrate film can be averaged, it is particularly advantageous for exposure of a large-sized substrate in which it is difficult to control the resist film thickness and film forming conditions. . Further, since the magnification correction can be performed both vertically and horizontally, high overlay accuracy can be obtained. Further, the resolution and the irradiation area per shot greatly depend on the width W of the circular arc slit. The resolution increases as the width W decreases, and the irradiation area increases as the width W increases. Therefore, by appropriately selecting the slit width, the device can be used effectively according to the design rule. On the other hand, since the region to be imaged is only an arc shape having a limited width, it is necessary to scan the reticle and the substrate integrally in order to transfer the image of the entire reticle onto the substrate.

Generally, assuming that the wavelength of the light source is λ and the numerical aperture of the projection lens is NA, these and the resolution R of the exposure optical system have the relationship shown by the following equation.

(Equation 1) Therefore, the resolution R can be improved by shortening the wavelength λ of the light emitted from the light source or increasing the numerical aperture NA of the projection lens.

On the other hand, by increasing the wavelength λ of the light or decreasing the numerical aperture NA of the projection lens, the resolution R decreases, but the area that can be exposed at one time is reduced.
That is, the shot size can be increased. Therefore, for a pattern that does not require high resolution, the throughput of the exposure processing can be improved.

The exposure optical systems 2A and 4 of the exposure apparatus shown in FIG.
Regarding A, for example, g as the light source of the exposure optical system 2A
Using a mercury lamp ML1 emitting a line (λ = 436 nm),
Further, an i-line (λ = 365n) is used as a light source of the exposure optical system 4A.
m) by using a mercury lamp ML2 that emits
Each achieves low resolution (large irradiation area) and high resolution (small irradiation surface).

FIGS. 4 and 5 show configurations of light sources that emit light of different wavelengths. FIG. 4 is a conceptual diagram of a light source provided in a second embodiment of the exposure apparatus according to the present invention. The exposure apparatus of this embodiment is characterized in that a solid-state laser is used as a light source, and the solid-state laser SL1 and the solid-state laser S shown in FIG.
L2 emits laser beams having different wavelengths. Laser light is excellent in monochromaticity, directivity, convergence, and coherence, and a solid-state laser is relatively small, has a high amplification gain, and has an advantage that a large oscillation output can be obtained.

A dye laser can be used in combination with a solid-state laser. Dye lasers are practically
A liquid laser in which a molecule such as a dye (dye), which is an organic dye molecule, is dissolved in a liquid such as alcohol as a laser substance. The liquid laser has a diameter of 0.1 μm to 1.2 μm by changing the type and concentration of the dye. A wide range of different wavelengths of laser light can be emitted.

FIG. 5 is a conceptual view of a light source provided in a third embodiment of the exposure apparatus according to the present invention. The exposure apparatus of the present embodiment is characterized in that the light sources of the two exposure optical systems are constituted by dye lasers using different dyes. FIG.
Is a light source used when the low-resolution exposure optical system 2 is configured by, for example, a mirror projection system.
The solid-state laser SL1, the dye tube D1, and the dye supply unit 71 are provided. FIG. 4B shows a light source used when the high-resolution exposure optical system 4 is configured by, for example, a stepper method. The solid-state laser SL2, the reflection mirror 53, the dye tube D2, and the dye supply unit 72 are connected to each other. Have. Dye supply unit 7
Dyes having different chemical structures are supplied from 1, 72. For example, a cytilbene dye (400 to 460) is supplied to the dye tube D1.
nm) from the dye supply unit 71, and the dye tube D
2 is an oligophenylene dye (320 to 400 nm)
Is supplied from the dye supply unit 72, and thereby, laser beams having different wavelengths are emitted.
An exposure optical system 2 having a large irradiation area on the substrate S and an exposure optical system 4 having a small irradiation area on the substrate S but having a high resolution are provided.

FIG. 6 is a conceptual view of a light source provided in a fourth embodiment of the exposure apparatus according to the present invention. The exposure apparatus of the present embodiment is characterized in that a light source is shared by using a harmonic generation element. The light source provided in the exposure apparatus of this embodiment includes a solid-state laser SL3, a half mirror 58, a reflection mirror 59, and a second harmonic generation element 79 made of LiNbO ₃ crystal. The laser light of wavelength λ1 generated by the solid-state laser SL3 is partially reflected by the half mirror 58 and supplied to the exposure optical system 2 with the same wavelength λ1 as when it was generated. On the other hand, the laser light transmitted through the half mirror 58 is reflected by the mirror 59, the optical path of which is deflected, enters the second harmonic generation element 79, becomes a laser light having a wavelength of 1 / 2λ1, and becomes an exposure optical system. 4 is supplied. As described above, when the wavelengths of the light required for the exposure optical system 2 and the exposure optical system 4 have an integer multiple relationship, the use of the second harmonic generation element allows the exposure optical system 2 and the exposure optical system 4 to be used. Can share the same light source.

FIG. 7 is a conceptual diagram of a light source provided in a fifth embodiment of the exposure apparatus according to the present invention. The exposure apparatus of the present embodiment is characterized in that a light source is shared by using a dye laser. The light source included in the exposure apparatus shown in FIG. 9 includes the solid-state laser SL3, the half mirror 58, the reflection mirror 59, the dye tubes D3 and D4, and the dye supply units 73 and 74. The laser light of wavelength λ2 generated by the solid-state laser SL3 is partially reflected by the half mirror 58 and enters the dye tube D4. For example, a dye stilbene-based dye is supplied from the dye supply unit 74 to the dye tube D4. This dye is excited by the laser beam and is supplied from the dye tube D4 to λ3 (4
Laser light having a wavelength of (00 to 460 nm) is emitted and supplied to the exposure optical system 2. On the other hand, the laser light transmitted through the half mirror 58 is reflected by the mirror 59, its optical path is deflected, and enters the dye tube D3. Dye tube D
For example, an oligophenylene-based dye is supplied to the exposure light system 3 from the dye supply unit 73, and the dye is excited by a laser beam to emit a laser beam having a wavelength of λ4 (320 to 400 nm) from the dye tube D3 to the exposure optical system 4. Supplied. In this way, the laser light is split using a half mirror or the like,
By using dye lasers having different dyes, laser beams having different wavelengths can be supplied to the two exposure optical systems. This makes it possible to realize an exposure optical system having different resolutions (throughputs).

FIG. 8 shows another embodiment in which an exposure apparatus according to the present invention is constructed using exposure optical systems having different resolutions.
And FIG.

FIG. 8 is a conceptual view showing an optical system of an exposure apparatus according to a sixth embodiment of the present invention. The exposure apparatus shown in the figure has a configuration in which an exposure optical system is configured by stepper type exposure optical systems 2B and 4B having different resolutions.

As described above, by configuring the exposure optical system by using the two stepper systems, the configuration of the entire apparatus is simplified, and the exposure processing is facilitated. Furthermore, for example, when a mercury lamp or solid-state laser is used as a light source, the wavelength is converted by using a harmonic generation element, and when a dye laser is used as a light source, different dyes are used. It allows the system to share a single light source.

FIG. 9 is a conceptual diagram showing an optical system of an exposure apparatus according to a seventh embodiment of the present invention. The exposure apparatus shown in the figure has a configuration in which the exposure optical systems 2C and 4C are configured only by the mirror projection system.

Similar to the case where the exposure optical system having a different resolution is constituted only by the above-mentioned stepper method, the case where two exposure optical systems are constituted only by the mirror projection method is applicable to any of the methods shown in FIGS. Can be used to supply light of different wavelengths to each exposure optical system,
This makes it possible to obtain exposure optical systems having different resolutions. In addition, as described above, by using the same exposure method, the light source can be easily shared, and the design of the reticle holding unit and the transport system, and the reticle can be easily shared, thereby simplifying the configuration of the entire apparatus. Exposure processing can be facilitated.

In addition to providing the wavelength conversion means described above, alternatively or in combination therewith, by selecting a projection lens system such that the two exposure optical systems have different numerical apertures NA, As can be derived from the relational expression (1), it is possible to realize an exposure optical system having different resolutions.

FIG. 10 shows an eighth embodiment of the exposure apparatus according to the present invention.
It is a key map showing an optical system of an embodiment. As shown in the figure, the two exposure optical systems 2B and 4B have the same light source 51.
And the supply of the light of the same wavelength λ1 is received. The exposure optical system 2B has a projection lens 57a having a numerical aperture NA1, while the exposure optical system 4B has a numerical aperture N larger than NA1.
It has a projection lens 57b of A2 (NA2> NA1).
Thus, the exposure optics 2 with low resolution (high throughput)
B and a high-resolution (low-throughput) exposure optical system 4B are provided. As described above, by using the projection lenses having different numerical apertures, two exposure optical systems having different resolutions and throughputs can be realized even when light of the same wavelength is received from the same light source.

The wavelength of light used for each exposure optical system is as follows:
g-line (λ = 436 nm), h-line (λ = 405 nm) and i
A light source such as a mercury lamp that emits a line (λ = 365 nm) can be appropriately selected according to required specifications. In addition to solid-state lasers, KrF (λ = 248 nm) and ArF (λ = 248 nm)
When a rare gas-halogen (excimer) laser such as 192 nm) is used, the throughput is reduced, but the resolution can be further improved.

[Embodiment] First exposure apparatus according to the present invention
FIG. 11 shows the entire configuration of the embodiment. The exposure apparatus 1A of this embodiment includes a low-resolution exposure optical system 2 of a mirror projection system and a high-resolution exposure optical system 4 of a stepper system.
, Substrate stages 5 and 7, substrate position detection unit 10, exposure control unit 12, exposure data storage unit 14, stage position detection units 16 and 18, stage drive unit 20, and drive control unit 22. Have.

The low-resolution exposure optical system 2 is provided at a predetermined position and is used to expose a low-resolution circuit pattern. The high-resolution exposure optical system 4 is located at a position different from that of the low-resolution exposure optical system 2, and in FIG.
Is provided at a position deviated from the low-resolution exposure optical system 2 by 180 degrees with respect to the center, and is used to expose a high-resolution circuit pattern. For example, in the liquid crystal display device 100 illustrated in FIG. 23, the pixel unit 120, the driving circuit 130a,
130b and the terminal unit 140 are exposed by the low-resolution exposure optical system 2, and the control unit 150 is exposed by the high-resolution exposure optical system 4.

The exposure optical systems 2 and 4 included in the exposure apparatus 1A of this embodiment differ from each other in the wavelength λ of the light source or the numerical aperture NA. Thus, the exposure optical systems 2 and 4 realize different resolutions (throughputs).

Each of the substrate stages 5 and 7 has a stage driving unit 20 on which a glass substrate S on which a pattern is to be transferred is placed.
And is driven to stop at the reference position of each exposure optical system. The substrate stages 5 and 7 are configured so as to be able to translate in a horizontal direction (in the drawing, a direction parallel to the paper surface) by a predetermined distance.

The substrate position detector 10 is provided near the low-resolution exposure optical system 2 and is mounted on the substrate stage 5 or the substrate stage 7 stopped at the reference position 2p of the low-resolution exposure optical system. The position of the substrate S with respect to the substrate stage is detected. This position detection is performed on the glass substrate S shown in FIG. The detection of the alignment mark 85 is performed using, for example, an image processing technique. Note that six liquid crystal display devices 100 shown in FIG. 23 are formed on the glass substrate S shown in FIG.

The exposure data storage unit 14 stores data necessary for performing exposure, such as substrate position data (alignment data) and one-shot position data detected by the substrate position detecting unit 10, and the substrate S. Is also stored.

The exposure control unit 12 controls the low-resolution exposure optical system 2 based on the data stored in the exposure data storage unit 14.
In addition to controlling the position of the reticle of the high-resolution exposure optical system 4, a command signal is sent to the drive control unit 22 to operate each of the substrate stages 5, 7 to slightly move in the horizontal direction.

The stage position detectors 16 and 18 are provided at the reference position 2 of the low-resolution exposure optical system 2 and the high-resolution exposure optical system 4, respectively.
The difference between p, 4p and the stop position of the substrate stage is detected.

When the drive control unit 22 does not receive the command signal from the exposure control unit 12, the drive control unit 22
Based on the results of the detections 6 and 18, the stage drive unit 20 is controlled so that each substrate stage is stopped at the reference positions 2p and 4p of the low-resolution exposure optical system 2 and the high-resolution exposure optical system 4. When a command signal from the exposure control unit 12 is received, the command signal and the stage position detection unit 1 are received.
The stage driving section 20 is controlled so that the substrate stages 5, 7 are finely moved in the horizontal direction based on the detection outputs of 6, 6.

Next, the operation of the exposure apparatus 1A of this embodiment will be described. First, the stage drive unit 2 is controlled by the drive control unit 22.
0, the substrate stage 5 is stopped at the reference position 2p of the low-resolution exposure optical system 2. Subsequently, after placing the glass substrate S on the substrate stage 5, the substrate position detector 10 detects the position of the glass substrate S on the substrate stage 5.
This detection data (alignment data) is transmitted to the exposure controller 1
2 is stored in the exposure data storage unit 14. Then, based on the alignment data and the exposure data stored in the exposure data storage section 14, the exposure control section 1
2 controls the low-resolution exposure optical system 2 to transfer a low-resolution circuit pattern by exposing the circuit pattern on the resist film applied on the glass substrate S.

When the transfer (exposure) of the low-resolution circuit pattern is completed, the substrate controller 5 is controlled by the drive controller 22 via the stage driver 20 so as to stop at the reference position 4p of the high-resolution exposure optical system 4. You. At this time, the drive control unit 22 controls the substrate stage 7 via the stage drive unit 20 so as to stop at the reference position 2p of the low-resolution exposure optical system 2.

Next, based on the alignment data and the exposure data of the glass substrate S placed on the substrate stage 5 stored in the exposure data storage unit 14, the high-resolution exposure optical system 4 is The controlled, high-resolution circuit pattern is transferred onto the applied resist film on the glass substrate S on the substrate stage 5 by exposure. Thereafter, the glass substrate S is removed from the substrate stage 5.

On the other hand, after the glass substrate S on which the low-resolution circuit pattern is to be transferred is placed on the substrate stage 7, the position of the glass substrate S on the substrate stage 7 is detected by the substrate position detecting section 10. The detected data (alignment data) is stored in the exposure data storage unit 14 via the exposure control unit 12 as described above. The low-resolution exposure optical system 2 is controlled by the exposure control unit 12 based on the alignment data and the exposure data, and a low-resolution circuit pattern is formed on the glass substrate S on the substrate stage 7.
Transcribed above.

When the transfer of the low-resolution circuit pattern is completed, the substrate stage 7 is driven to stop at the reference position 4p of the high-resolution exposure optical system 4, and the substrate stage 5 is moved to the reference position of the low-resolution exposure optical system 2. It is driven to stop. Thereafter, a new glass substrate S on which a circuit pattern is to be transferred is placed on the substrate stage 5 and a low-resolution circuit pattern is transferred in the same manner as described above, and a high-resolution circuit pattern is transferred onto the glass substrate S on the substrate stage 7. Is transferred. The glass substrate S to which the high-resolution circuit pattern has been transferred is removed from the substrate stage 7. Thereafter, the above is repeated.

FIG. 13 is a conceptual diagram illustrating a planar configuration of a liquid crystal display device that can be manufactured by the exposure apparatus according to the present invention. That is, in the example of FIG. 2, a pixel region 210 is provided near the center of the substrate S, and X drivers 212 and 214 are provided above and below it. Also,
Y drivers 220 and 222 are provided on the left and right of the pixel area. Above and below the X driver, a memory unit 230,
232 are provided. In addition, around these
Wiring units 224 to 227 are provided. A logic unit 240 is provided at the lower left of the substrate, and a connection unit 250 and a terminal unit 252 for TAB (tape automated bonding) are provided at the upper right.

In the above-described liquid crystal display device, for example, the pixel region, the driver, the wiring portion, the connection portion, the terminal portion, and the like are used even when high definition display is required.
For example, it can be formed according to a design rule of about 2 to 3 μm.

On the other hand, the memory units 230 and 232 for storing image data and the like and the logic unit 240 for processing image signals include, for example, various image data buffers, image data processing or logical operation processing, etc. Execute Therefore, if the design rules of these regions are highly integrated, for example, to about 0.6 μm, the data storage capacity and the logical operation function are enhanced, and a liquid crystal display device having a much higher function than before is realized in a smaller and lighter form. be able to.

In the exposure apparatus of this embodiment, the relative positional relationship between the low-resolution exposure optical system 2 and the substrate stage, for example, the substrate stage 5 when stopped at the reference position 2p of the optical system 2, is as follows. Since the high-resolution exposure optical system 4 and the substrate stage 5 stopped at the reference position 4p of the optical system 4 are configured to have the same or predetermined relative position relationship, If the position of the substrate S on the substrate stage (for example, the substrate stage 5) is detected by the substrate position detection unit 10 on the resolution exposure optical system 2 side, the detected alignment data indicates that the substrate stage 5 rotates and moves. When it is located at the reference position 4p of the high resolution exposure optical system 4, it can be used as alignment data of the substrate on the substrate stage 5. Therefore, it is not necessary to measure the alignment data again in the high-resolution exposure optical system 4, and the throughput can be improved.

In addition, the improvement in throughput
It is possible to miniaturize the TFT constituting the driving circuit and the like without lowering the throughput than before. As a result, the board area per unit function is reduced, so that resources can be saved and power consumption can be reduced.

In the above embodiment, the area of one shot in the low-resolution exposure optical system 2 is larger than the area of one shot in the high-resolution exposure optical system 4, and the depth of focus in the low-resolution exposure optical system 2 is high. It is deeper than that of the optical system 4.

In the above-described three embodiments, the substrate position detector 10 is provided on the low-resolution exposure optical system 2 side, but may be provided on the high-resolution exposure optical system 4 side.

If the substrate position detecting section 10 is provided in both of the exposure optical systems 2 and 4 as in the exposure apparatus 1B shown in FIG. 14, the transfer of the low-resolution and high-resolution circuit patterns is completed first. This substrate can be removed from the substrate stage where the substrate is placed, a new substrate to which the circuit pattern is to be transferred can be placed, and the alignment data of this substrate can be detected. , And the throughput can be further improved.

Further, in the above-described embodiment, the detection of the alignment data of the substrate is performed when the substrate stage is stopped at the reference position of one of the exposure optical systems. The substrate stage is stopped at a position different from the position where the exposure optical systems 2 and 4 are located (for example, the position "A" in FIG. 2), a new substrate is placed, and the alignment data is transferred to this position. May be detected. By doing so, the throughput can be further improved.

In the above embodiment, an example in which a substrate stage is provided for each of the exposure optical systems having different resolutions from each other has been described. However, one substrate stage is used and a single substrate stage is shared by the two exposure optical systems. Can also.

FIG. 15 shows a second example of the exposure apparatus according to the present invention.
It is a block diagram showing the principal part structure of Example. The exposure apparatus 1C shown in the figure includes a first exposure optical system 2, a second exposure optical system 4, and a single substrate stage 17 which is characteristic in this embodiment.

The exposure optical systems 2 and 4 included in the exposure apparatus 1C of the present embodiment also have different wavelengths λ or numerical apertures NA of the light sources, thereby realizing different resolutions (throughputs).

The substrate stage 17 includes a stage driving unit 20
To move in the xyz and θ directions, and the position is detected by the position detection unit 42. Information on the position of the substrate stage 17 detected by the position detection unit 42 is accumulated in the exposure data acquisition unit 24.

On the other hand, the exposure optical systems 2 and 4 and the substrate stage 1
7, reticle holders 26 and 28 are provided, and can be moved by reticle adjustment units 30 and 32, respectively. Reticles R1 and R2 can be detachably set in each reticle holder.

The exposure optical systems 2 and 4, the stage driving unit 20,
Exposure data acquisition unit 24 and reticle adjustment units 30 and 32
Are controlled by the control unit 40 to enable cooperative operation.

FIG. 16 is a block diagram showing a main part of a third embodiment of the exposure apparatus according to the present invention. An exposure apparatus 1D shown in the figure includes a first exposure optical system 2 and a second exposure optical system 2.
The exposure optical system 4, the substrate stage 17, and the drive units 36 and 38 provided in each exposure optical system. That is,
In this embodiment, the substrate stage 17 is fixed, and the exposure optical system and the reticle can be switched and used. Note that the exposure optical systems 2 and 4 of the exposure apparatus 1D of this embodiment also have different light source wavelengths λ or numerical apertures NA, thereby realizing different resolutions (throughputs).

As described above, each of the exposure apparatuses shown in FIGS. 15 and 16 has a unique configuration in which two exposure optical systems 2 and 4 having different resolutions share a single substrate stage 17. Thus, the transfer between these two exposure optical systems can be performed smoothly and promptly.

Next, the operation of the exposure apparatuses 1C and 1D will be described. Here, as an example, an exposure process of the substrate of the liquid crystal display device shown in FIG. 13 will be described.

First, the substrate S is arranged in an exposing area of the first exposure optical system 2. In the case of the exposure apparatus 1 </ b> C shown in FIG. 15, the substrate stage 17 on which the substrate S is placed may be moved below the first exposure optical system 2. In the case of the exposure apparatus 1D shown in FIG.
6 to move it onto the substrate stage 17.

Next, the alignment between the substrate S and the reticle R1 is adjusted. That is, the positional relationship between the substrate S and the reticle R1 is adjusted so that a pattern is formed at a predetermined position on the substrate S. When adjusting this alignment,
It is preferable to use the above-mentioned "alignment mark".

Next, information relating to the alignment between the reticle R1 and the substrate S is input by the exposure data acquisition unit 24 and stored together with the exposure data.

Next, exposure is performed by the first exposure optical system 2. The relationship between the resolution of the first exposure optical system 2 and the resolution of the second exposure optical system 4 may be high, but here, as an example, the case where the resolution of the first exposure optical system is low will be described. In this case, the first exposure optical system 2 exposes areas such as the pixel area 210, the drivers 212 and 214, and the wiring sections 224 to 227 of the liquid crystal display device shown in FIG.

As shown in FIG. 12, when a plurality of devices D are formed on a substrate S, the substrate stage 17
Are sequentially moved, and exposure by the reticle R1 can be executed in each device region.

Next, the substrate stage 17 is moved to the exposing area of the second exposing optical system 4, and the substrate S and the reticle R2 are moved.
And adjust the alignment. Also in this case, the positional relationship between the two can be adjusted by laser light or an image processing system based on the alignment marks provided on the substrate S and the reticle R2, respectively.

Next, information relating to the alignment between the reticle R2 and the substrate S is input by the exposure data acquisition unit 24 and stored together with the exposure data.

Next, exposure is performed by the second exposure optical system 4. Here, when a high-resolution stepper type optical system or the like is used as the second exposure optical system 4, the substrate S
Logic unit 240 and memory units 230 and 232
Can be divided into a plurality of regions and exposed at a high resolution. In the case of using a stepper, exposure is performed while sequentially connecting each of these divided patterns.

As described above, also in the second and third embodiments, the area where the resolution is not so required is quickly exposed by the low-resolution exposure optical system, and the area where the resolution is required has the high resolution. Exposure can be precisely performed by the exposure optical system.

Further, according to the exposure apparatus shown in FIGS. 15 and 16, since these exposure optical systems share the substrate stage 17, there is no need to remove the substrate. As a result, "dust" and "ESD"
(Electrostatic discharge), and the production yield can be significantly improved.

Incidentally, in the present invention, the two exposure optical systems can share not only the substrate stage but also the reticle. Hereinafter, this specific example will be described.

FIG. 17 shows a fourth embodiment of the exposure apparatus according to the present invention.
It is a block diagram showing the principal part structure of Example. The exposure apparatus 1E shown in the figure also includes a first exposure optical system 2, a second exposure optical system 4, a substrate stage 17, and a stage driving unit 20.
, A position detection unit 42, an exposure data acquisition unit 24, and a control unit 40. Since these details can be the same as those described above with reference to FIG. 15, the same reference numerals are given and detailed description is omitted. However, also in this embodiment, the exposure optical systems 2 and 4 The wavelengths λ or numerical apertures NA of the light sources are different from each other, whereby the exposure optical system 2,
No. 4 realize different resolutions (throughputs).

One of the features of the exposure apparatus of this embodiment is that a reticle can be shared between two exposure optical systems. That is, the reticle holder 28 is provided,
The reticle controller 30 controls the first exposure optical system 2 and the second
And the exposure optical system 4 can be moved. Further, information on the position of the reticle holder 28 is detected by the position detection unit 34 and can be output to the control unit 40.

FIG. 18 shows a fifth embodiment in which drive units 36 and 38 are provided in the exposure optical systems 2 and 4, respectively. That is, in the exposure apparatus 1F shown in the figure, the substrate stage 17 can be stopped and the optical system can be moved and switched. Note that the exposure apparatus 1 of the present embodiment
The exposure optical systems 2 and 4 of F also have different wavelengths λ or numerical apertures NA of the light sources, thereby realizing different resolutions (throughputs).

The reticle holder 28 in each of the exposure apparatuses 1E and 1F is provided with a reticle R in which the exposure patterns used in the first exposure optical system 2 and the second exposure optical system 4 are integrated.

FIGS. 19 and 20 are conceptual views illustrating the planar configuration of such an integrated reticle. These reticles are used for the liquid crystal display device shown in FIG.

In the example shown in FIG. 19, the reticle R
Pattern 210R corresponding to the pixel area of the liquid crystal display device and the pattern 21 corresponding to the driver
2R, 214R, patterns 224R corresponding to wiring portions
227R and the like are provided. These patterns are formed in accordance with, for example, a design rule of about 2 to 3 μm. These portions can be collectively scanned and exposed by, for example, a low-resolution mirror projection type exposure optical system.

On the other hand, on the lower side of the reticle R, the patterns 240A to 240A-
240C and patterns 230A and 23 obtained by dividing the memory section
0B, 232A and 232B are formed respectively. These patterns are used, for example, in order to achieve high integration.
It is formed corresponding to a design rule of 6 μm or less. These portions can be precisely exposed by, for example, a high-resolution stepper type exposure optical system.

On the other hand, in the reticle illustrated in FIG. 20, the pixel region, the driver, and the wiring portion of the liquid crystal display device are also formed as divided patterns. Note that FIG.
, The reference numerals assigned to the respective patterns correspond to the reference numerals of the respective parts shown in FIG. For example, the pixel region 210
Is formed by exposing and connecting the four divided patterns 210A four times. Of these patterns, those with less fine design rules can be exposed using, for example, a low-resolution stepper type exposure optical system.

Moreover, as shown in FIGS. 19 and 20,
When the reticle is integrated, an effect is obtained that alignment data between the reticle and the substrate can be shared between the two exposure optical systems. Hereinafter, the operation of the exposure apparatuses 1E and 1F shown in FIGS. 17 and 18 will be described with reference to this point.

First, the substrate S and the reticle R are arranged on the first exposure optical system 2. That is, in the exposure apparatus 1E, the substrate stage 17 on which the substrate S is mounted and the reticle holder 28 on which the reticle R is set are arranged in the exposing area of the first exposure optical system 2. In the exposure apparatus 1F, the driving unit 36 moves the first exposure optical system 2 above the substrate S.

Next, the alignment between the substrate S and the reticle R is adjusted. That is, the positional relationship between the substrate S and the reticle R is adjusted so that a pattern is formed at a predetermined position on the substrate S. This alignment adjustment can be performed using a laser or an image recognition system (not shown) using the above-described “alignment mark”.

Next, the information relating to the alignment between the reticle R and the substrate S is input by the obtaining unit 24 and stored together with the exposure data. Here, the information on the position of the substrate S can be detected by the position detecting means 22, and the information on the position of the reticle R can be detected by the position detecting means 34 provided on the reticle holder. This information is
It is stored in the exposure data acquisition unit 24 via the control unit 40 as appropriate. As described above, the “exposure data” can also include information on “displacement” due to a change in size due to heating of the glass substrate S or the like.

Next, exposure is performed by the first exposure optical system 2. For example, a case where the resolution of the first exposure optical system is relatively low will be described. In the patterns shown in FIGS. 19 and 20, only a portion such as a pixel region or a driver region is selectively exposed. As mentioned above, the first
In the case where the exposure optical system adopts a low-resolution mirror projection optical system, the reticle shown in FIG. 19 is used, and the first exposure optical system employs a low-resolution stepper optical system. In such a case, the reticle shown in FIG. 20 is used.

Next, the substrate S and the reticle R are arranged in the second exposure optical system. That is, in the exposure apparatus 1E, the substrate stage 17 on which the substrate S is mounted and the reticle holder 28 on which the reticle R is set are moved to the exposing area of the second exposure optical system 4. In the exposure apparatus 1F, the drive unit 38 moves the second exposure optical system 4 above the substrate S.

Next, exposure is performed by the second exposure optical system 4. Here, for example, a portion requiring a fine design rule such as a logic portion or a memory portion of the liquid crystal display device can be accurately exposed. When a high-resolution stepper type optical system is used as the second exposure optical system 4, a division pattern is provided on the reticle R as shown in FIGS. 19 and 20, and division exposure is performed.

When the exposure apparatuses 1E and 1F are used, it is not necessary to readjust the alignment between the substrate and the reticle prior to the exposure by the second exposure optical system. That is, the alignment data relating to the optimal positional relationship between the substrate S and the reticle R is acquired by the exposure data acquisition unit 24 as a part of the exposure data. Therefore, it is only necessary to read out the stored exposure data and arrange the substrate S and the reticle R based on the alignment data.
That is, it is not necessary to adjust the alignment by the laser or the image recognition system under the second exposure optical system 4. As a result, the time required for alignment adjustment can be reduced by half, and the throughput of the exposure step can be further improved.

Incidentally, since the exposure apparatus of the present invention has two exposure optical systems having different resolutions, a unique feature arises in the order in which the respective optical systems are used. Hereinafter, for simplicity, a liquid crystal display device having a simplified configuration will be described as an example.

FIG. 21 is a conceptual diagram showing a circuit arrangement of an example of a liquid crystal display device. That is, the liquid crystal display device shown in FIG.
0, Y driver 350, control section 360, and memory section 3
70. It is also assumed that the pixel region 310 and the terminal unit 320 are exposed at a low resolution, and the remaining part is exposed at a high resolution. Further, a case where exposure is performed by a division exposure method by dividing all regions will be described as an example. FIG. 22A is an explanatory view exemplifying an exposure sequence in the case where the exposure of the substrate of such a liquid crystal display device is performed in a “place sequential method”.

That is, a predetermined starting position on the substrate (FIG. 2)
,... Are sequentially exposed. This exposure sequence
When implemented in an exposure apparatus of a system that switches by moving the optical system as in the exposure apparatus 1D shown in FIG. 16, an effect is obtained that the amount of movement of the substrate stage can be suppressed.

On the other hand, FIG. 22B is an explanatory diagram showing an example of the case of performing exposure by the “resolution sequential method”. That is, on the substrate, for example, all low-resolution regions such as, for example, are exposed, and then,
Expose the high-resolution areas in order as in According to this sequence, the number of switching of the exposure optical system can be reduced. In addition, by continuously exposing adjacent portions, it is possible to maintain high "connection accuracy" and eliminate problems such as "color misregistration" caused by pattern misregistration.

[0107]

As described above in detail, according to the exposure apparatus of the present invention, it is possible to form an exposure optical system having different resolutions from each other. The throughput of the exposure step can be improved as much as possible.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram showing an exposure optical system included in an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic configuration diagram showing an example of a stepper type exposure optical system.

FIG. 3 is a schematic configuration diagram illustrating an example of a mirror projection type exposure optical system.

FIG. 4 is a conceptual diagram of a light source included in an exposure apparatus according to a second embodiment of the present invention.

FIG. 5 is a conceptual diagram of a light source included in an exposure apparatus according to a third embodiment of the present invention.

FIG. 6 is a conceptual diagram of a light source included in an exposure apparatus according to a fourth embodiment of the present invention.

FIG. 7 is a conceptual diagram of a light source included in an exposure apparatus according to a fifth embodiment of the present invention.

FIG. 8 is a conceptual diagram showing an exposure optical system included in an exposure apparatus according to a sixth embodiment of the present invention.

FIG. 9 is a conceptual diagram showing an exposure optical system included in an exposure apparatus according to a seventh embodiment of the present invention.

FIG. 10 is a conceptual diagram showing an exposure optical system included in an exposure apparatus according to an eighth embodiment of the present invention.

FIG. 11 is a block diagram showing a configuration of a first embodiment of an exposure apparatus according to the present invention.

FIG. 12 is a diagram showing a relationship between a glass substrate and an alignment mark.

FIG. 13 is a conceptual diagram illustrating a planar configuration of a liquid crystal display device that can be manufactured by the exposure apparatus according to the present invention.

FIG. 14 is a block diagram showing a configuration of a modification of the embodiment shown in FIG. 11;

FIG. 15 is a block diagram showing a configuration of a second embodiment of the exposure apparatus according to the present invention.

FIG. 16 is a block diagram showing the configuration of a third embodiment of the exposure apparatus according to the present invention.

FIG. 17 is a block diagram showing the configuration of a fourth embodiment of the exposure apparatus according to the present invention.

FIG. 18 is a block diagram showing a configuration of a fifth embodiment of the exposure apparatus according to the present invention.

FIG. 19 is a conceptual diagram illustrating a planar configuration of an integrated reticle.

FIG. 20 is a conceptual diagram illustrating a planar configuration of an integrated reticle.

FIG. 21 is a conceptual diagram illustrating a circuit arrangement of an example of a liquid crystal display device.

FIG. 22 is an explanatory view exemplifying an exposure order in a case where exposure of a substrate of a liquid crystal display device is performed by a “place sequential method” and a “resolution sequential method”.

FIG. 23 is a schematic diagram showing a circuit arrangement of another example of a liquid crystal display device integrated with a pixel portion and a driving circuit.

[Explanation of symbols]

 1, 1A-1F Exposure device 2, 2A-2D Low-resolution exposure optical system 2p, 4p Reference position 4, 4A-4D High-resolution exposure optical system 5, 7, 17 Substrate stage 10 Substrate position detector 12 Exposure controller 14 Exposure Data storage unit 16, 18 Stage position detection unit 20 Stage drive unit 22 Drive control unit 28 Reticle holder 30 Reticle control unit 34 Position detection unit 36, 38 Drive unit 40 Control unit 51 Light source 52 Elliptical mirror 53, 55, 59 Mirror 54 Fly Eye lens 56 Condenser lens 57 Projection lens 58 Half mirror 61 Trapezoidal mirror 62 Concave mirror 63 Convex mirror 71 to 74 Dye supply unit 79 Second harmonic generation element R, R1, R2 Reticle (exposure mask) S Glass substrate SL1 to SL3 Solid state laser D1 ~ D4 dye tube

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[Procedure amendment]

[Submission date] April 12, 1999 (1999.4.1
2)

[Procedure amendment 1]

[Document name to be amended] Drawing

[Correction target item name] All figures

[Correction method] Change

[Correction contents]

FIG.

FIG. 3

FIG. 2

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG.

FIG. 13

FIG. 23

FIG. 11

FIG. 14

FIG. 15

FIG. 16

FIG.

FIG.

FIG.

FIG. 21

FIG.

FIG.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Satoshi Inoue 3-5-5 Yamato, Suwa City, Nagano Prefecture Inside Seiko Epson Corporation (72) Inventor Sumio Utsunomiya 3-5-5 Yamato, Suwa City, Nagano Prefecture Inside Seiko Epson Corporation (72) Inventor Kazuo Yudasaka 3-5-3 Yamato, Suwa City, Nagano Prefecture Inside Seiko Epson Corporation (72) Mitsutoshi Miyasaka 3-5-5 Yamato Suwa City, Nagano Prefecture Seiko Epson Corporation (72) Inventor Yojiro Matsueda 3-5-5 Yamato, Suwa-shi, Nagano Prefecture Seiko Epson Corporation F-term (reference) 2H097 BB02 CA06 CA17 GB02 JA02 KA18 LA12 5F046 AA05 AA11 AA25 BA03 CA03 CB17 CC01 CD01 FC07

Claims (12)

[Claims] A first exposure optical system having a first resolution; and a second exposure optical system having a second resolution different from the first resolution.
An exposure optical system, a substrate stage for mounting a substrate, and an optical pattern based on different design rules, wherein the first exposure optical system and the second optical system are provided on the substrate at different resolutions according to the respective design rules. An exposure control means for selectively switching between the first exposure optical system and the second exposure optical system so as to be projected from each of the exposure optical systems. 2. The first exposure optical system has a first light source for emitting a first light having a first wavelength, and the second exposure optical system has a first light source having a first wavelength. Different second
2. The exposure apparatus according to claim 1, further comprising a second light source that emits a second light having a wavelength of: 3. An exposure apparatus according to claim 1, wherein said first and second lights are laser lights. 4. An exposure apparatus according to claim 3, wherein said first and second light sources are solid-state lasers. 5. The apparatus according to claim 1, wherein said first and second exposure optical systems include a third exposure optical system.
A third light source that emits a third light having a wavelength of ??????? Either the first exposure optical system or the second exposure optical system 2. The apparatus according to claim 1, further comprising wavelength conversion means for converting the third light into a fourth light having a fourth wavelength different from the third wavelength.
3. The exposure apparatus according to claim 1. 6. An exposure apparatus according to claim 5, wherein said wavelength conversion means includes a harmonic generation element. 7. An exposure apparatus according to claim 5, wherein said wavelength conversion means includes a dye laser. 8. The system according to claim 1, wherein the first exposure optical system has a first numerical aperture, and the second exposure optical system has a second numerical aperture different from the first numerical aperture. Claims 1 to 7
The exposure apparatus according to any one of the above. 9. The first exposure optical system is disposed at a first position, the second exposure optical system is disposed at a second position, and the substrate stage is disposed at the first exposure optical system. A first substrate stage on which the optical pattern can be projected by a system; and a second substrate stage on which the optical pattern can be projected by the second exposure optical system, wherein the first and second substrate stages are provided. A drive unit for controlling the stage drive unit so as to stop the first and second substrate stages at the positions of the first and second exposure optical systems; and And a substrate position detection unit provided on one of the exposure optical systems of the second exposure optical system and for detecting a position of a substrate placed on a substrate stage of the one exposure optical system; Output of detector and before An exposure data storage unit that stores exposure data of the substrate, wherein the exposure control unit controls the first and second exposure optical systems based on data stored in the exposure data storage unit. 9. The exposure apparatus according to claim 1, wherein a pattern is transferred onto the substrate under control. 10. The first exposure optical system is disposed at a first position, the second exposure optical system is disposed at a second position, and the substrate stage is disposed at the first exposure optical system. The optical system can be moved between the first position where the optical pattern can be projected by the system and the second position where the optical pattern can be projected by the second exposure optical system. An exposure apparatus according to claim 1. 11. The first exposure optical system and the second exposure optical system each move to a position where the optical pattern can be projected on the substrate mounted on the substrate stage. 9. The exposure apparatus according to claim 1, wherein the exposure apparatus is enabled. 12. The image forming apparatus according to claim 11, further comprising: holding means for holding the exposure mask, wherein the optical pattern projected from the first exposure optical system is formed using a first portion of the exposure mask held by the holding means. 12. The exposure apparatus according to claim 10, wherein the optical pattern projected from the second exposure optical system is formed using a second portion of the exposure mask held by the holding unit. .