200539407 玖、發明說明： 【發明所屬之技術領域】 本發明是有關於一種場效雷a轉 曰4t 麥政電日日體及其散熱裝置，特別 疋才日一種可避免於過迴焊爐後， 5 .U，占錫挎間的差異及沾錫 力的不平衡產生不良偏差 捉同屋σ口良率，並且可提昇散 熱效果之場效電晶體及其散熱裝置。 【先前技術】 由於積體電路越趨短小，佶猓尤 丁办一 使侍在低電壓高電流的情況 下’各元件上的能量損失增加， 大里的熱此伴隨高電流的 消耗而產生，這些熱能如果不能在適當時間内予以排除， 可成會使電子元件過熱而使特性改變，間接影響電子元件 的功能及壽命，嚴重時會使其燒燦造成電器產品的損壞。 如圖〗及@ 2所*包括有—金氧半 (__2及一散熱裝置】，該電晶體2是設於—電= 備=電路板3上。此散熱裝置1為-散熱器且密接於金氧 ^效電晶體2之絕緣殼體21的頂面211上，將被封裝於 立21内σ[5電路上的晶片咖，圖未示）所產生並傳導到殼 Z 21的熱能散除，通常為了增加散熱的效果，散熱裝置' :做成一具有大表面積的形狀’例如圖1中所表示的一種 悲樣’為具有—底座11及複數個由底座11的外表面向遠離 外表面的方向垂直延伸的散熱鰭片12。 ^放熱時，金氧半場效電晶體2可透過，，設於其上的散熱 虞置1 、’’封裝時電性連接於電晶體内部電路的二支訊號接 腳22及位於電晶體底面且與電晶體所在的電路板3接觸 200539407 的金屬層23’’等通路將熱能散除’其中，由散熱裝置1散除 的熱能佔1〇%〜2〇%，透過訊號接腳22及金屬層23傳導到 電路板3上所佈設的電路銅落（圖未示）而㈣的熱能佔 60% 70%。透過散熱裝£丨來散除熱能時，由於包覆晶片 5 的殼體21為一絕緣材質（eP〇xy)且導熱係數不高，因此熱 傳效果不佳，可傳到散熱裳置i的熱能有限，再者，經由 電路板3上的電路銅箱散熱時，一方面由於電路銅箱面積 有限’另-方面由於安裝於電子設備内的散熱風扇（圖未 示）未能直接對電路銅羯或電路板3產生降溫的效果，因 〇 &仍*有電路板3及金氧半場效電晶體2溫度過高的情況 0 【發明内容】 因此，本發明之首一目的，在提供一種場效電晶體之 散熱裝置。 本％明之另一目的，在提供一種可降低過迴錫爐後因 沾錫時間差異而產生不良偏差之場效電晶體。 本1明之再一目的，在提供一種可降低過迴焊爐後因 沾錫力差異而產生不良偏差之場效電晶體。 方；疋，本發明之場效電晶體，包含一界定出—容室之 絕緣殼體、-設於容室内之晶片、至少二訊號接腳，及一 金屬層。訊號接腳與晶片電性連接，並凸伸於絕緣殼體外 、。金屬層設於絕緣殼體之頂面，且附著於晶片之頂面上， 並包括一凸伸於絕緣殼體外之延伸部。 本發明之散熱裝置，設於上述之場效電晶體上，包含 5 10 15 20 200539407 -金屬散熱器及一導熱墊片。導熱墊片設於金屬散埶哭盘 場效電晶體間，且使場攻雪曰， 使％效電曰曰體之金屬層及散熱器間可资 爲接觸，以達散熱效果。 山 本發明之場效電晶體’主要是將與晶片接觸之金屬層 於電晶體的頂面’以使與散熱裝置直接接觸，增進散教 的功效，且金屬層之延伸部可朝電路板的方向彎折，使可 焊接於電路板的輝墊上，用以增加電晶體於過迴錫爐後的 了使之作為接地之用。此外，本發明之散熱裝 ’透過-導熱塾片，使散熱器與電晶體之金屬層得以密 切接觸’增加導熱的效果，而且散熱器上可設有多數個散 熱韓片’以提昇散熱的效果。此種場效電晶體由於不需增 力名員外的加工費用，因此在成本上與習知並無明顯差異， 再者’可降低生產時的不良率，對費用的節省是—大利基 。另一方面，多個場效電晶體於特定條件下可共用一個大 型散熱裝置’在實際的應用性上提昇了很多，因此，在作 業性及經濟性上都可達到良好的成效。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一較佳實施例的詳細說明巾，將可清 楚的明白。 如圖3及圖4所示，本發明之場效電晶體 (M〇SFET)400及其散熱裂£ 5〇〇白勺較佳實施例，是以連結 于電腦主機板（電路板）6上反向的場效電晶體4〇〇及其 政熱裝置500來做說明，但不以此為限。本發明的散熱裝 6 200539407 置5〇0設於至少一反向的場效電晶體彻上（圖3中是以一 散«置500對應一個場效電晶體侧為例），反向的場效 電曰曰月丑400疋將场效電晶體反向並使其訊號接腳的彎折 方向相反，具有-絕緣的殼體41及_依附於殼體Μ頂面 上且可導出反向的場效電晶豸彻上所產生之熱能的金屬 層42，金屬層42包括一基板421，及一連接於基板切一 端且凸伸於殼體41外之延伸部422，延伸部422於本實施 例中於凸伸殼體41後向下朝電腦主機板6的方向彎折，且 其自由端可與訊號接腳43之自由端共平面，但在其他實施 心樣下，延伸部422之自由端及訊號接腳43之自由端的高 度可不同，而且延伸部422亦可為具一可與訊號接腳43共 平面之垂直段，及一連接基板421及垂直段之水平段（圖未 不）等其他不同態樣等。另一方面，本實施例中訊號接腳43 的數目為二（圖示中之中央訊號接腳43已被剪掉），在其他 實施態樣下其數目可為三或三以上。 通常’場效電晶體400之晶片44(die，圖7)是設於殼 體41所界定出之一容室（圖未示）中，且晶片的頂面與金屬 層42接觸，使晶片產生的熱能可藉由金屬層42傳導出去 ，以進行散熱。 散熱裝置500包含一金屬散熱器51及一導熱墊片（ thermal pad) 52。散熱器51具有一底座511，底座511的 頂面上向上垂直延伸複數個間隔設置的散熱鰭片512，此散 熱鰭片5 12於本實施例中雖具有相同的斷面尺寸，但可為 不同。底座5 11的底面兩相對邊向下垂直延伸有二個對應的 200539407 插腳5 13。導熱墊片52為一絕緣且軟性的扁平本體52，本 體52的頂面及底面分別對應於底座511的底面及金屬層42 的頂面，使剛性的金屬層42及金屬散熱器51間可密實的 結合。 、 5 叹置時，先將場效電晶體400佈設於電腦主機板6上 對應的位置，訊號接腳43的自由端及金屬層42之延伸部 422的自由端，與電腦主機板6間配置有黏著件（如錫膏等） 或焊墊（pad)，以使於過迴焊爐後可焊接於電腦主機板6上 。然後，將導熱墊片52設於金屬層42上，再將金屬散熱 1〇 為51置於導熱墊片52上，使導熱墊片52密實地與金屬散200539407 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a field-effect lightning-converting 4t maizheng electric sun-body and its heat-dissipating device, in particular, it can be avoided after passing through a reflow furnace. 5U, the difference between the occupancy of the tin and the imbalance of the soldering force caused a bad deviation to capture the same room σ mouth yield, and can improve the heat dissipation effect of the field effect transistor and its heat dissipation device. [Previous technology] As integrated circuits become shorter and shorter, Chi Youding will make the energy loss on each element increase under low voltage and high current conditions. The heat of the Tali is generated with the consumption of high currents. These If the thermal energy cannot be eliminated within a proper time, it can cause the electronic components to overheat and change their characteristics, which indirectly affects the function and life of the electronic components, and in severe cases will burn them and cause damage to electrical products. As shown in the illustration and @ 2 所 * includes -metal oxide half (__2 and a heat sink), the transistor 2 is located on-electricity = equipment = circuit board 3. This heat sink 1 is a-radiator and is closely connected to The top surface 211 of the insulating case 21 of the metal-oxide-effect transistor 2 will be encapsulated in the stand 21 [5 chip chip on the circuit, not shown) and dissipated by the heat energy transmitted to the case Z 21 Generally, in order to increase the effect of heat dissipation, the heat dissipation device is formed into a shape with a large surface area. For example, a tragedy like that shown in FIG. 1 has a base 11 and a plurality of base surfaces 11 away from the outer surface. Directionally extending heat dissipation fins 12. ^ When exothermic, the metal-oxide half-field-effect transistor 2 is transparent, and the heat dissipation device 1 disposed thereon is electrically connected to the two signal pins 22 of the internal circuit of the transistor and the bottom surface of the transistor when packaged. In contact with the circuit board 3 where the transistor is located, the metal layer 23 "200539407 and other paths will dissipate the thermal energy. Among them, the thermal energy dissipated by the heat sink 1 accounts for 10% to 20%. Through the signal pin 22 and the metal layer 23 Conducted to the circuit copper 3 (not shown) arranged on the circuit board 3, and the heat energy of the radon accounts for 60% to 70%. When dissipating thermal energy through a heat sink, since the housing 21 covering the chip 5 is an insulating material (ePoxy) and the thermal conductivity is not high, the heat transfer effect is not good, and it can be transferred to the heat sink i. The thermal energy is limited. Furthermore, when dissipating heat through the circuit copper box on the circuit board 3, on the one hand, the area of the circuit copper box is limited; on the other hand, due to the cooling fan (not shown) installed in the electronic device, the circuit copper cannot be directly connected to the circuit copper box.羯 or the circuit board 3 produces a cooling effect, because there are still situations where the temperature of the circuit board 3 and the metal oxide half field effect transistor 2 is too high. [Summary of the Invention] Therefore, the first object of the present invention is to provide a Heat dissipation device for field effect transistor. Another object of the present invention is to provide a field-effect transistor that can reduce undesirable deviations due to differences in soldering time after returning to a tin furnace. Another object of the present invention is to provide a field-effect transistor that can reduce undesirable deviations due to differences in soldering force after reflow ovens. Fang; 疋, the field-effect transistor of the present invention includes an insulating case defining a container chamber, a wafer disposed in the container chamber, at least two signal pins, and a metal layer. The signal pins are electrically connected to the chip and protrude outside the insulating case. The metal layer is disposed on the top surface of the insulating case, is attached to the top surface of the wafer, and includes an extending portion protruding outside the insulating case. The heat dissipation device of the present invention is provided on the above field effect transistor and includes 5 10 15 20 200539407-a metal heat sink and a thermal pad. The thermal pad is located between the field effect transistor of the metal scatter plate, and the field is exposed to snow, so that the metal layer and the radiator of the% effect body can be contacted to achieve heat dissipation. Yamamoto's field effect transistor 'mainly places the metal layer in contact with the wafer on the top surface of the transistor' to directly contact the heat sink to improve the effect of dispersal, and the extension of the metal layer can be directed to the circuit board Bend so that it can be soldered on the glow pad of the circuit board, used to increase the transistor after it is returned to the tin furnace, and used it as a ground. In addition, the heat-dissipating device of the present invention 'through-heat-conducting shim allows the heat sink to closely contact the metal layer of the transistor' to increase the heat-conducting effect, and the heat sink can be provided with a plurality of heat-dissipating Korean sheets to improve the heat-dissipating effect . Since this type of field effect transistor does not need to increase the processing costs outside the celebrities, there is no obvious difference in cost from the conventional one. Furthermore, it can reduce the defect rate during production, and the cost saving is a large niche. On the other hand, multiple field-effect transistors can share a large heat sink under specific conditions, which has greatly improved the practical applicability. Therefore, it can achieve good results in terms of operation and economy. [Embodiment] The foregoing and other technical contents, features, and effects of the present invention will be clearly understood in the following detailed description of a preferred embodiment with reference to the drawings. As shown in FIG. 3 and FIG. 4, the field effect transistor 400 of the present invention and its thermal cracking £ 500 are preferably connected to a computer motherboard (circuit board) 6 The reverse field effect transistor 400 and its thermal management device 500 are used for illustration, but not limited thereto. The heat sink 6 200539407 of the present invention is placed on at least one field-effect transistor in the reverse direction (in Fig. 3, a scattered «500 corresponding to one field-effect transistor side is taken as an example). Xiaodian Yueyue 400 疋 reverses the field effect transistor and reverses the bending direction of its signal pins. It has -insulating case 41 and _ attached to the top surface of case M and can derive the reverse A metal layer 42 of thermal energy generated by the field effect transistor. The metal layer 42 includes a substrate 421 and an extension 422 connected to a cut end of the substrate and protruding outside the housing 41. The extension 422 is implemented in this embodiment. In the example, the housing 41 is bent downwardly toward the computer motherboard 6 after projecting the housing 41, and its free end can be coplanar with the free end of the signal pin 43, but in other implementations, the extension 422 is free. The height of the end and the free end of the signal pin 43 can be different, and the extension 422 can also be a vertical segment with a plane that is coplanar with the signal pin 43 and a horizontal segment connecting the substrate 421 and the vertical segment (not shown in the figure) And so on. On the other hand, in this embodiment, the number of signal pins 43 is two (the central signal pin 43 in the figure has been cut off), and the number may be three or more in other implementation forms. Generally, the wafer 44 (die, FIG. 7) of the field-effect transistor 400 is set in a container (not shown) defined by the housing 41, and the top surface of the wafer is in contact with the metal layer 42, so that the wafer is generated. The thermal energy can be conducted through the metal layer 42 for heat dissipation. The heat dissipation device 500 includes a metal heat sink 51 and a thermal pad 52. The radiator 51 has a base 511, and a plurality of spaced-apart heat fins 512 extending vertically upwards on the top surface of the base 511. Although the heat fins 512 have the same cross-sectional dimensions in this embodiment, they may be different. . The two opposite sides of the bottom surface of the base 5 11 extend vertically downward with two corresponding 200539407 pins 5 13. The thermal conductive pad 52 is an insulating and flexible flat body 52. The top and bottom surfaces of the body 52 correspond to the bottom surface of the base 511 and the top surface of the metal layer 42, respectively, so that the rigid metal layer 42 and the metal heat sink 51 can be dense. Combination. , 5 When placed, first place the field effect transistor 400 on the corresponding position on the computer motherboard 6. The free end of the signal pin 43 and the free end of the extension 422 of the metal layer 42 are arranged between the computer motherboard 6. There are adhesive parts (such as solder paste, etc.) or pads, so that they can be soldered to the computer motherboard 6 after passing through the reflow oven. Then, the thermal conductive pad 52 is disposed on the metal layer 42, and the metal is dissipated 10 to 51 on the thermal conductive pad 52, so that the thermal conductive pad 52 is densely dispersed with the metal.
熱裔51的底座511接觸，且金屬散熱器51的二個插腳513 分別由殼體41的兩側通過，並插設於電腦主機板6上對應 且貫穿電腦主機板6的插設孔61中，藉由表面黏著（SMT )的方式將插腳513焊固於電腦主機板6上，使導熱塾片 15 52及金屬散熱器51不致鬆脫。 金屬層42之延伸部422藉由焊墊（pad)與電腦主機板6 焊固，使與訊號接腳43於表面黏著（SMT)的過程中可互 相牵引及平衡，避免場效電晶體400因沾錫時間（weuing time)的差異及沾錫力（wetting f0rce)的不平衡，造成過爐加 20 熱炼錫焊接後產生不可預測且大量的偏移不良，以提^產 品良率。此外，金屬層42之延伸部422也可設計作為接地 (ground)使用。 電流導通時，反向的場效電晶體400所產生的熱能， 主要是由金屬層42及訊號接腳43傳導出，由於金屬層42 200539407 的導熱面積大，且可透過更大表面積的金屬散熱器51將熱 能散除，因此可較經由訊號接腳43而由電腦主機板6上的 電路銅箔散熱的比例要高。而且，由於金屬材質的金屬層 42具有較高的導熱係數可較快的將熱能帶出，避免反向的 場效電晶體400的溫度過高。另一方面，金屬散熱器51上 的散熱鰭片512，比起電腦主機板6上的電路銅箔較容易被 電腦内所安裝的散熱風扇吹到，可使散熱的效果更佳。 ίο 15 於本實施例中是將散熱裝置5〇〇設於一反向的場效電 晶體400上，於特定的考量下，可將多數個反向的場效電 晶體400於一區域内#中設置，此時，這些反向的場效電 晶體400可以將其金屬層42都朝向同一處，再將一具有較 大尺寸且可足以遮蔽所有金屬層42的散熱裝置5〇〇設於這 些電晶體4GG上，如圖5所示，由於導熱墊片52及散熱絲 片512的面積較個別設置時的面積總和要大，因此可更增 加散熱的效果。其次，散熱器51的散熱轉片512，主要功 用為散熱，因此除了本實施例中所揭露的，斷面尺寸相同 、相互平行且呈矩形排列的形狀外，每一個散熱鱗片512 的尺寸大小也可以不同(見_ 6)，而且散熱鰭片512排列的 方式也可以為輻射狀排列或其他不同的態樣。 本較佳實施例中，雖採用反向的場效電晶體400及其 散熱裝置5GG來作說明，但是熟知該項技術的人士也知可 :本發明使用於其他類似的電子元件的情況，且每一散熱 叩51下方凸々的插腳513由於利用插設及表面黏著（謝） 的方式焊固於電腦主機板6上，固定方式非常簡單易行， 20 200539407 而且插腳513設置的位置、方向及數目等可依實際需求而 有各種不同的組合態樣。 歸納上述，本發明之散熱裝置5〇〇具有_可隔絕的導 熱墊片52，使同為金屬材質的金屬層42及散熱器$ 1於導 熱時，不會使電子元件造成短路的情況，因此熱源可透過 導熱性良好的金屬層42、導熱墊片52及散熱器51，快速 的向外導出散熱，且散熱風扇的吹拂更有利於散熱鰭片512 的降溫，增加散熱的功效，再配合訊號接腳43及電腦主機 板6上的電路銅箱也可對熱能作一部分的散除，因此可達 到更佳的散熱效果。另一方面，散熱器51簡易的固設方式 ，使得本發明之散熱裝置500的可利用性大大的提高，增 加產業利用性。 另一方面，本發明之場效電晶體4〇〇利用金屬層42朝 上的設計’且使其延伸部422之自由端焊固於電腦主機板6 上，除可增加散熱效果之外，亦可因金屬層42之延伸部 422及訊號接腳43間力量相互的平衡及牵引，提高產品的 良f，且不會額外增加加工的費用，因此在實用性上也相 對提回。再者，金屬層42之延伸部422也可用作接地的設 計，更增加其可應用性。故確實能達到發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 耗圍及發明說明書内容所作之簡單的等效變化與修飾，皆 應仍屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 10 200539407 為-習知金氧半場效電晶體中散熱裝置的部份立 為上述習知金氧半場效電晶體中散熱裝置設置後 圖3為本發明場效電晶體及其散熱裳置之較佳實施例 中場效電曰曰體及其散熱裝置的立體分解圖； 圖4為上述較佳實施财場交丈電晶體及其散熱裝置裝 5又於電腦主機板上的側視圖； 、 ίο 圖1 體分解圖； 圖2 的側視圖； °為類似圖2的視圖，說明一散熱裝置可同時妒設 於複數個電晶體之金屬層上的態樣； ^ ρ圖6為上述較佳實施例中散熱裝置之另一態樣的視圖 °兒明政熱韓片可分別具有不同的大小及形狀等；及 為本^明％效電晶體之側視剖面圖。 15 11 200539407 【圖式之主要元件代表符號說明 1 散熱裝置 11 底座 12 散熱鰭片 2 電晶體 21 殼體 211 頂面 22 訊號接腳 23 金屬層 3 電路板 400 場效電晶體 41 殼體 42 金屬層 421 基板 422 延伸部 43 訊號接腳 44 晶片 500 散熱裝置 51 散熱器 511 底座 512 散熱鰭片 513 插腳 52 導熱墊片 6 電腦主機板 61 插設孔 12The base 511 of the heat source 51 is in contact, and the two pins 513 of the metal heat sink 51 pass through the two sides of the housing 41 respectively, and are inserted into the corresponding insertion holes 61 on the computer motherboard 6 and penetrate the computer motherboard 6. The pins 513 are soldered to the computer motherboard 6 by means of surface adhesion (SMT), so that the thermally conductive tab 15 52 and the metal heat sink 51 cannot be loosened. The extension portion 422 of the metal layer 42 is welded to the computer motherboard 6 by a pad, so that the signal pins 43 can be pulled and balanced with each other during the surface adhesion (SMT) process to avoid the field effect transistor 400. The difference in soldering time (weuing time) and the imbalance in soldering force (wetting f0rce) result in an unpredictable and large amount of offset failure after soldering in the furnace plus 20 hot-melt tin solders to improve product yield. In addition, the extending portion 422 of the metal layer 42 can also be designed to be used as a ground. When the current is turned on, the thermal energy generated by the reversed field effect transistor 400 is mainly conducted by the metal layer 42 and the signal pin 43. Because the metal layer 42 200539407 has a large heat conduction area and can dissipate heat through a larger surface area of metal The device 51 dissipates thermal energy, so it can dissipate heat more than the circuit copper foil on the computer motherboard 6 via the signal pin 43. In addition, since the metal layer 42 made of metal has a high thermal conductivity, it can quickly take out thermal energy, and avoid the temperature of the field effect transistor 400 in the reverse direction being too high. On the other hand, the heat-dissipating fins 512 on the metal heat sink 51 are easier to be blown by the heat-dissipating fan installed in the computer than the circuit copper foil on the computer motherboard 6, and the heat-dissipating effect is better. 15 In this embodiment, the heat dissipation device 500 is provided on an inverted field effect transistor 400. Under specific considerations, a plurality of inverted field effect transistors 400 can be located in a region # At this time, these reversed field effect transistors 400 can have their metal layers 42 facing the same place, and then a heat sink 500 having a larger size and sufficient to cover all the metal layers 42 can be placed on these In the transistor 4GG, as shown in FIG. 5, since the areas of the heat conductive pad 52 and the heat sink wire 512 are larger than the total area of the individual installations, the effect of heat dissipation can be further increased. Secondly, the main function of the radiating fins 512 of the radiator 51 is to dissipate heat. Therefore, in addition to the shape disclosed in this embodiment, the cross-section dimensions are the same, parallel to each other and in a rectangular arrangement. It can be different (see _ 6), and the way in which the heat dissipation fins 512 are arranged can also be a radial arrangement or other different aspects. In this preferred embodiment, although an inverse field effect transistor 400 and its heat dissipation device 5GG are used for description, those skilled in the art also know that the present invention is applicable to other similar electronic components, and Since the protruded pins 513 below each heat sink 51 are soldered to the computer motherboard 6 by means of insertion and surface adhesion (thanks), the fixing method is very simple and easy. 20 200539407 And the position, direction and The number can have various combinations according to actual needs. Summarizing the above, the heat sink 500 of the present invention has a thermally conductive pad 52 that can be isolated, so that the metal layer 42 and the heat sink $ 1, which are also metallic materials, will not cause a short circuit of the electronic component when conducting heat, so The heat source can quickly dissipate heat through the metal layer 42 with a good thermal conductivity, the thermal pad 52 and the heat sink 51, and the blowing of the cooling fan is more conducive to the cooling of the cooling fins 512, which increases the heat dissipation effect, and cooperates with the signal The pin 43 and the circuit copper box on the computer motherboard 6 can also dissipate a part of the heat energy, so a better heat dissipation effect can be achieved. On the other hand, the simple fixing method of the radiator 51 greatly improves the usability of the heat sink 500 of the present invention, and increases the industrial applicability. On the other hand, the field-effect transistor 400 of the present invention utilizes the design of the metal layer 42 facing upward, and the free end of its extension portion 422 is welded to the computer motherboard 6 in addition to increasing the heat dissipation effect. Due to the mutual balance and traction of the forces between the extension portion 422 of the metal layer 42 and the signal pin 43, the good quality of the product can be improved without additional processing costs, so it is relatively retrievable in practical terms. Furthermore, the extending portion 422 of the metal layer 42 can also be used as a grounding design, further increasing its applicability. So it can really achieve the purpose of invention. However, the above are only preferred embodiments of the present invention. When the scope of implementation of the present invention cannot be limited in this way, that is, simple equivalent changes and modifications made in accordance with the patent application scope of the present invention and the content of the invention specification. , All should still fall within the scope of the invention patent. [Schematic description] 10 200539407 The part of the heat sink in the conventional metal oxide half field effect transistor is set as the heat sink in the conventional metal oxide half field effect transistor. Figure 3 shows the field effect transistor of the present invention and A three-dimensional exploded view of the field effect power cell and its heat dissipation device in a preferred embodiment of its heat dissipation clothes; FIG. 4 is the above-mentioned preferred embodiment of the transistor and its heat dissipation device mounted on the computer motherboard Figure 1 is an exploded view of Figure 1; Figure 2 is a side view of Figure 2; ° is a view similar to Figure 2, illustrating how a heat sink can be set on the metal layers of a plurality of transistors at the same time; ^ ρ diagram 6 is a view of another aspect of the heat dissipation device in the above-mentioned preferred embodiment. The Mingzheng Re Korean films can have different sizes and shapes, etc .; 15 11 200539407 [Description of the main symbols of the drawings 1 heat sink 11 base 12 heat sink fin 2 transistor 21 case 211 top surface 22 signal pin 23 metal layer 3 circuit board 400 field effect transistor 41 case 42 metal Layer 421 Substrate 422 Extension 43 Signal pin 44 Chip 500 Radiator 51 Radiator 511 Base 512 Radiating fin 513 Pin 52 Thermal pad 6 Computer motherboard 61 Insertion hole 12