5 10 15 1231016 玖、發明說明： 【發明所屬之技術領域】 本發明是有關於-種場效電晶體及其散熱裝置，特別 是指-種可避免於過迴焊爐後’目沾錫時間的差異及沾錫 力的不平衡產生不良偏差以提高產品良 / 民丰，並且可提昇散 熱效果之場效電晶體及其散熱裝置。 【先前技術】 由於積體電路越趨短小，使得在低電壓高電流的情況 下，各元件上的能量損失增加，大量的熱能伴隨高電流的 祕而產±，這些熱能如果不能在適當時間内予以排除， 可能會使電子元件過熱而使特性改變，間接影響電子元件 的功能及壽命’嚴重時會使其燒燦造成電器產品的損壞= 如圖1及圖2所示包括有一金氧半場效電晶體 (MOSFET)2及一散熱裝置卜該電晶體2是設於—電子設 備的電路板3上。此散熱裝置}為一散熱器且密接於金^ 半場效電晶體2之絕緣殼體21的頂面211上，將被封裝於 殼體21内部電路上的晶片（如，圖未示）所產生並傳導到殼 體21的熱能散除，通常為了增加散熱的效果，散熱装置】 :做成一具有大表面積的形狀，例如圖1中所表示的—種 ㈣’為具有—底座11及複數個由底座11的外表面向遠離 外表面的方向垂直延伸的散熱鰭片12。 ^放熱％，金氧半場效電晶體2可透過，，設於其上的散熱 裒置1 、封裝時電性連接於電晶體内部電路的二支訊 腳22”及，，位於電晶體底面且與電晶體所在的電路板3接觸 20 1231016 的金屬層23”等通路將熱能散^ ^ ^ ^ ^ ^ ^ ^ ^ 月人丨示具宁，由散熱裝置1散除 的熱能佔10°/。〜20%，透渦-〇咕从 K旒接腳22及金屬層23傳導到 電路板3上所佈設的電路銅(圖未示）而㈣ 5 10 6〇%〜7〇%。透過散_ 1來散除熱能時，由於包覆晶片 的殼體21為一絕緣材質（ 、k poxy)且導熱係數不高，因此熱 傳效果不佳，可傳到散埶奘罢 成熟衣置1的熱能有限，再者，經由 電路板3上的電路銅箔散埶眸 士二丄 月又…、日t，一方面由於電路銅箔面積 有限’另一方面由於安裝於曾 一 文衣於電子设備内的散熱風扇（圖未 示）未能直接對電路銅領或電路板3產生降溫的效果，因 此仍常有電路板3及金氧半場效_ 2溫度過高的情況 【發明内容】 因此’本發明之首-目的，在提供一種場效電晶體之 散熱裝置。 本1月之另目的，在提供一種可降低過迴錫爐後因 沾錫時間差異而產生不良偏差之場效電晶體。 本發明之再一目的，在提供一種可降低過迴焊爐後因 沾錫力差異而產生不良偏差之場效電晶體。 於是，本發明之場效電晶體，包含一界定出一容室之 絕緣殼體、一設於容室内之晶片、至少二訊號接腳，及一 金屬層。訊號接腳與晶片電性連接，並凸伸於絕緣殼體外 。金屬層設於絕緣殼體之頂面，且附著於晶片之頂面上， 並包括一凸伸於絕緣殼體外之延伸部。 本發明之散熱裝置，設於上述之場效電晶體上，包含 1231016 一金屬散熱裔及一導熱墊片。導熱墊片設於金屬散熱器與 場效電晶體間，且使場效電晶體之金屬層及散熱器間可密 實接觸’以達散熱效果。 本發明之場效電晶體，主要是將與晶片接觸之金屬層 置於電晶體的頂面，以使與散熱裝置直接接觸，增進散熱 的功效，且金屬層之延伸部可朝電路板的方向彎折，使可 焊接於電路板的焊墊上，用以增加電晶體於過迴錫爐後的 %固性，也可使之作為接地之用。此外，本發明之散熱裝 置，透過一導熱墊片，使散熱器與電晶體之金屬層得以密 切接觸，增加導熱的效果，而且散熱器上可設有多數個散 熱鰭片，以提昇散熱的效果。此種場效電晶體由於不需增 加額外的加工費用，因此在成本上與習知並無明顯差異， 再者，可降低生產時的不良率，對費用的節省是一大利基 。另一方面，多個場效電晶體於特定條件下可共用一個大 型政熱裝置，在貫際的應用性上提昇了很多，因此，在作 業性及經濟性上都可達到良好的成效。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一較佳實施例的詳細說明中，將可清 20 楚的明白。 如圖3及圖4所示，，本發明之場效電晶體 (MOSFET)400及其散熱裝置5〇〇的較佳實施例，是以連結 于電腦主機板（電路板）6上反向的場效電晶體4〇〇及其 月欠熱裝置5〇〇來做說明，但不以此為限。本發明的散熱裝 1231016 f 500設於至少一反向的場效電晶體彻上（圖3中是以一 散，裝置500對應一個場效電晶體4〇〇為例），反向的場效 電曰曰月且400是將場效電晶體反向並使其訊號接腳u的彎折 方向相反，具有一絕緣的殼體41 & 一依附於殼體41頂面 上且可導出反向的場效電晶體上所產生之熱能的金屬 山 孟屬層42包括一基板421，及一連接於基板421 — 凸伸方、版體41外之延伸部422，延伸部422於本實施 例中於凸伸殼體41後向下朝電腦主機板6的方向彎折，且 =自由端可與訊號接腳43之自由端共平面，但在其他實施 悲樣下，延伸部422之自由端及訊號接腳43之自由端的高 、，可不同而且延伸部422亦可為具一可與訊號接腳43共 平面之垂直段，及一連接基板421及垂直段之水平段（圖未 不）等其他不同悲樣等。另一方面，本實施例中訊號接腳α 的數目為二（圖示中之中央訊號接腳43已被剪掉），在其他 實施態樣下其數目可為三或三以上。 通苇，場效電晶體400之晶片44(die，圖7)是設於殼 體41所界定出之-容室（圖未示）中，且晶片的頂面與金屬 層42接觸，使晶片產生的熱能可藉由金屬層42傳導出去 ’以進行散熱。 散熱裝置500包含一金屬散熱器51及一導熱墊片（ thermal Pad) 52。散熱器51具有一底座511，底座511的 頂面上向上垂直延伸複數個間隔設置的散熱鰭片512，此散 熱鰭片512於本實施例中雖具有相同的斷面尺寸，但可為 不同。底座5 11的底面兩相對邊向下垂直延伸有二個對應的 5 10 15 20 叹置時，先將場效電晶體4〇〇佈設於電腦主機板6 對應的位置，訊號接腳43的自由端及金屬層42之延伸部 的自由端，與電腦主機板6間配置有黏著件（如錫膏等） 或焊墊（pad)，以使於過迴焊爐後可焊接於電腦主機板6上 1231016 插腳5 13。導熱墊片52為一絕緣且軟性的扁平本體μ，本 體52的頂面及底面分別對應於底座的底面及金屬層u 的頂面，使剛性的金屬層42及金屬散熱器51間可密實 結合。 、 二然後，將導熱墊片52設於金屬層42上，再將金屬散熱 裔51置於導熱墊片52上，使導熱墊片52密實地與金屬散 熱器的底座511接觸，且金屬散熱器、51的二個插腳^ 分別由殼體的兩側通過，並插設於電腦主機板6上對應 且貫穿電腦主機板6的插設孔61中，藉由表面黏著（謝 )的方式將插腳513焊固於電腦主機板6上，使導熱墊片 52及金屬散熱器5 1不致鬆脫。 金屬層42之延伸部422藉由焊墊㈣)與電腦主機板6 焊固，使與訊號接腳43於表面黏著（SMT)的過程中可互 相牽引及平衡’避免場效電晶體目沾錫時間⑽麻§ time)的差異及沾錫力（wetting f〇rce)的不平衡造成過姨加 熱炫錫焊接後產生不可預測且大量的偏移不良，以提^產° 品良率。此外’金屬層42之延伸部422也可設計作為=地 (ground)使用。 電流導通時，反向的場效電晶體4〇〇所產生的熱炉， 主要是由金屬層42及訊號接腳43傳導出，由於金屬層c 8 1231016 的導熱面積大，且可透過更大表面積的金屬散熱器51將熱 能散除’因此可較經由訊號接腳43而由電腦主機板6上的 電路銅箔散熱的比例要高。而且，由於金屬材質的金屬層 42具有較高的導熱係數可較快的將熱能帶出，避免反向的 5 %效電晶體400的溫度過高。另一方面，金屬散熱器51上 的散熱鰭片512，比起電腦主機板6上的電路銅箔較容易被 電細内所安裝的散熱風扇吹到，可使散熱的效果更佳。 於本貫施例中是將散熱裝置5〇〇設於一反向的場效電 曰曰租400上，於特定的考量下，可將多數個反向的場效電 10 鍾400於一區域内集中設置，此時，這些反向的場效電 晶體400可以將其金屬層42都朝向同一處，再將一具有較 大尺寸且可足以遮蔽所有金屬層42的散熱裝置50〇設於這 一電b曰體400上，如圖5所示，由於導熱塾片52及散熱韓 片512的面積較個別設置時的面積總和要大，因此可更增 15 力政…、的效果。其次，散熱器5 1的散熱鰭片5 12，主要功 用為散熱，因此除了本實施例中所揭露的，斷面尺寸相同 相互平订且呈矩形排列的形狀外，每一個散熱韓片5 Μ 的尺寸大小也可以不同（見圖6)，而且散熱轉片512排列的 方式也可以為輻射狀排列或其他不同的態樣。 '〇 纟較佳實施例中，雖採用反向的場效電晶體彻及其 散熱裝置5G0來作說明，但是熟知該項技術的人士也知可 將本發明使用於其他類似的電子元件的情況，且每一散熱 器5!下方凸設的插腳513由於利用插設及表面黏著（smt) 的方式焊固於電腦主機板6上，固定方式非常簡單易行， ίο 15 20 1231016 而且插腳⑴言史置的位置、方向及數目等可依實際需求而 有各種不同的組合態樣。 歸納上述，本發明之散熱裝置500具有-可隔絕的導 熱塾片52’使同為金屬材質的金屬層42及散熱器w於導 熱時，不會使電子元件造成短路的情況，因此熱源可透過 導熱性良好的金屬層42、導熱墊片52及散熱器Η ’快速 的向外^出散熱’且散熱風扇的吹拂更有利於散敎妹片512 的降溫，增加散熱的功效，再配合訊號接腳43及^腦主機 板6上的電路銅領也可對熱能作一部分的散除，因此可達 到更佳的散熱效果。另-方面，散熱器51冑易的固設方式 ，使得本發明之散熱裝置遍的可利用性大大的提高，增 加產業利用性。 另一方面’本發明之場效電晶體彻利用金屬層仏朝 上的設計，且使其延伸部422之自由端焊固於電腦主機板6 上，除可增加散熱效果之外，亦可因金屬層42之延伸部 =2及訊號接腳43間力量相互的平衡及牵引，提高產品的 t率’且不會額外增加加工的費用，因此在實用性上也相 賴南。再者，金屬層42之延伸部422也可用作接地的設 计’更增加其可應用性。故確實能達到發明之目的。 处、惟以上所述者’僅為本發明之較佳實施例而已，當不 ，以此限定本發明實施之範圍，即大凡依本發明申請:利 耗圍及發明說明書内容所作之簡單的等效變化與修錦，皆 應仍屬本發明專利涵蓋之範圍内。 【圓式簡單說明】 10 1231016 圖1 習知金氧半場效電晶體中散熱裝置的部份立 體分解圖； ® 2為上述習知金氧半場效電晶體尹散熱裝置設置後 的側視圖； =3為本發明場效電晶體及其散熱裝置之較佳實施例 中，％效電晶體及其散熱裝置的立體分解圖； 圖4為上述較佳實施例中場交文電晶體及其散熱裝置裝 5又於電腦主機板上的側視圖； 、广為類似圖2的視圖，說明一散熱裝置可同時裝設 於複數個電晶體之金屬層上的態樣； / 6為上述較佳實施例中散熱裝置之另—態樣的視圖 ’說明散熱·鰭片可分別具有不同的大小及形狀等；及 圖7為本發明場效電晶體之側視剖面圖。 【圖式之主要元件代表符號說明】5 10 15 1231016 发明, Description of the invention: [Technical field to which the invention belongs] The present invention relates to a field-effect transistor and its heat dissipation device, in particular, a species that can avoid 'eye contact time after passing through a reflow furnace. The difference of the soldering force and the imbalance of the soldering force produce bad deviations to improve the product quality / minfeng, and the field-effect transistor and its heat-dissipating device that can improve the heat dissipation effect. [Previous technology] As integrated circuits become shorter and shorter, under low voltage and high current conditions, the energy loss on each component increases, and a large amount of thermal energy is generated along with the secret of high current. Excluded, it may cause the electronic components to overheat and change their characteristics, which indirectly affects the function and life of the electronic components. When it is severe, it will burn and cause damage to electrical products. A transistor (MOSFET) 2 and a heat sink are provided on the circuit board 3 of the electronic device. This heat sink is a heat sink and is in close contact with the top surface 211 of the insulating case 21 of the gold half field effect transistor 2 and is generated by a chip (eg, not shown) that is packaged on the internal circuit of the case 21 The heat energy transmitted to the casing 21 is dissipated. Generally, in order to increase the effect of heat dissipation, the heat dissipation device is made into a shape with a large surface area. For example, as shown in FIG. The heat dissipation fins 12 extend vertically from the outer surface of the base 11 in a direction away from the outer surface. ^ Exothermic%, the metal-oxide half-field effect transistor 2 is transparent, and the heat dissipation device 1 provided thereon is electrically connected to the two signal pins 22 "of the transistor's internal circuit during packaging, and is located on the bottom surface of the transistor and The contact with the metal layer 23 ″ of the circuit board 3 where the transistor is located 20 and 12 ″ will dissipate the thermal energy ^ ^ ^ ^ ^ ^ ^ ^ Yueren 丨 indicates that the thermal energy dissipated by the heat sink 1 accounts for 10 ° /. -20%, the eddy-go-conductor is conducted from the K22 pin 22 and the metal layer 23 to the circuit copper (not shown) arranged on the circuit board 3, and 10 5 106% to 70%. When dissipating thermal energy by dispersing _1, since the shell 21 covering the wafer is an insulating material (, k poxy) and the thermal conductivity is not high, the heat transfer effect is not good, and it can be transferred to disperse and mature clothing. The thermal energy of 1 is limited. Furthermore, the circuit copper foil on the circuit board 3 is scattered for two months ... and the day t, on the one hand, because of the limited area of the circuit copper foil, and on the other hand, because it is installed in Zeng Yiwenyi Electronics The cooling fan (not shown) in the device can not directly reduce the temperature of the copper collar or the circuit board 3, so the circuit board 3 and the metal-oxygen half field effect _ 2 temperature is often too high [Content of the Invention] Therefore, 'the first-objective of the present invention is to provide a heat dissipation device for a field effect transistor. Another objective of this January is to provide a field-effect transistor that can reduce undesirable deviations due to differences in soldering time after passing back to the furnace. Yet another object of the present invention is to provide a field-effect transistor that can reduce undesirable deviations due to differences in soldering strength after reflow ovens. Therefore, the field effect transistor of the present invention includes an insulating case defining a container, a chip disposed in the container, at least two signal pins, and a metal layer. The signal pins are electrically connected to the chip and protrude out of the insulating case. The metal layer is disposed on the top surface of the insulating case, is attached to the top surface of the wafer, and includes an extending portion protruding outside the insulating case. The heat dissipation device of the present invention is provided on the above field effect transistor and includes 1231016 a metal heat sink and a thermal pad. The thermal pad is located between the metal heat sink and the field effect transistor, and the metal layer of the field effect transistor and the heat sink can be tightly contacted 'to achieve a heat dissipation effect. In the field-effect transistor of the present invention, the metal layer in contact with the wafer is mainly placed on the top surface of the transistor so as to make direct contact with the heat-dissipating device to improve the heat-dissipating effect, and the extension portion of the metal layer can be directed to the circuit board. Bend so that it can be soldered to the pads of the circuit board to increase the% solidity of the transistor after passing it back to the tin furnace, and it can also be used for grounding. In addition, the heat dissipation device of the present invention allows a close contact between the heat sink and the metal layer of the transistor through a thermally conductive gasket to increase the heat conduction effect, and the heat sink can be provided with a plurality of heat dissipation fins to improve the heat dissipation effect. . Since this type of field effect transistor does not need to increase additional processing costs, it is not significantly different from conventional ones in terms of cost. Furthermore, it can reduce the defect rate during production, which is a big niche for cost savings. On the other hand, multiple field-effect transistors can share a large-scale political heating device under certain conditions, which has greatly improved the applicability across the world. Therefore, it can achieve good results in terms of operation and economy. [Embodiment] The foregoing and other technical contents, features, and effects of the present invention will be clearly understood in the following detailed description of a preferred embodiment with reference to the accompanying drawings. As shown in FIG. 3 and FIG. 4, the preferred embodiment of the field effect transistor (MOSFET) 400 and the heat dissipation device 500 of the present invention is reversed connected to the computer motherboard (circuit board) 6. The field effect transistor 400 and its monthly underheating device 500 are used for illustration, but not limited thereto. The heat dissipation device 1231016 f 500 of the present invention is provided on at least one reverse field effect transistor (in FIG. 3, a field effect is shown, and the device 500 corresponds to one field effect transistor 400 as an example). The reverse field effect The electric signal is 400 and the field effect transistor is reversed and its signal pin u is bent in the opposite direction. It has an insulating case 41 and is attached to the top surface of the case 41 and can be derived in the reverse direction. The metal mountain layer 42 of the thermal energy generated on the field effect transistor includes a substrate 421 and an extension portion 422 connected to the substrate 421—a convex square and a plate body 41. The extension portion 422 is in this embodiment. After protruding the casing 41, it is bent downward in the direction of the computer motherboard 6, and the free end can be coplanar with the free end of the signal pin 43, but in other implementations, the free end of the extension 422 and The height of the free end of the signal pin 43 may be different, and the extension 422 may also be a vertical segment having a plane that is coplanar with the signal pin 43 and a horizontal segment (not shown in the figure) connecting the substrate 421 and the vertical segment. Other different sad things. On the other hand, in this embodiment, the number of signal pins α is two (the central signal pin 43 in the figure has been cut off), and the number may be three or more in other implementation forms. Through the reed, the wafer 44 (die, FIG. 7) of the field effect transistor 400 is provided in a chamber (not shown) defined by the casing 41, and the top surface of the wafer is in contact with the metal layer 42 to make the wafer The generated thermal energy can be conducted out through the metal layer 42 to dissipate heat. The heat dissipation device 500 includes a metal heat sink 51 and a thermal pad 52. The heat sink 51 has a base 511, and a plurality of spaced-apart heat fins 512 extending vertically upwards on the top surface of the base 511. Although the heat fins 512 have the same cross-sectional dimensions in this embodiment, they may be different. The two opposite sides of the bottom surface of the base 5 11 extend vertically downwards with two corresponding 5 10 15 20. When sighed, first place the field effect transistor 400 at the corresponding position of the computer motherboard 6, and the signal pin 43 is free. End and the free end of the extended portion of the metal layer 42, an adhesive member (such as a solder paste) or a pad is arranged between the computer main board 6 and the computer main board 6, so that it can be soldered to the computer main board 6 after passing through the reflow furnace. On 1231016 pins 5 13. The thermal conductive pad 52 is an insulating and flexible flat body μ. The top and bottom surfaces of the body 52 correspond to the bottom surface of the base and the top surface of the metal layer u, respectively, so that the rigid metal layer 42 and the metal heat sink 51 can be tightly combined. . Then, the thermal pad 52 is placed on the metal layer 42 and the metal heat sink 51 is placed on the thermal pad 52 so that the thermal pad 52 is in close contact with the base 511 of the metal radiator, and the metal radiator Two pins, 51 and 51 pass through the two sides of the casing, respectively, and are inserted into the corresponding insertion holes 61 on the computer motherboard 6 and penetrate the computer motherboard 6, and the pins are adhered (thanks) on the surface. 513 is welded and fixed on the computer main board 6 so that the thermal conductive pad 52 and the metal heat sink 51 are not loosened. The extension portion 422 of the metal layer 42 is welded to the computer motherboard 6 by the solder pads ㈣), so that the signal pins 43 can be pulled and balanced with each other during the surface adhesion (SMT) process. The difference in time ramie § time) and the imbalance of wetting fοrce result in unpredictable and a large number of offset failures after heating and soldering, so as to improve product yield. In addition, the extension portion 422 of the 'metal layer 42 may be designed to be used as a ground. When the current is turned on, the heating furnace generated by the reverse field effect transistor 400 is mainly conducted by the metal layer 42 and the signal pin 43. Because the metal layer c 8 1231016 has a large heat conduction area and can transmit a larger amount The surface area of the metal heat sink 51 dissipates the heat energy, so it can dissipate heat more than the circuit copper foil on the computer motherboard 6 via the signal pin 43. Moreover, since the metal layer 42 made of metal has a high thermal conductivity, it can quickly take out thermal energy, and avoid the temperature of the reverse 5% efficiency transistor 400 being too high. On the other hand, the heat radiating fins 512 on the metal heat sink 51 are easier to be blown by the cooling fan installed in the microcomputer than the circuit copper foil on the computer motherboard 6, and the heat dissipation effect is better. In the present embodiment, the heat dissipation device 500 is set on a reverse field-effect power supply 400, and under specific considerations, a plurality of reverse field-effect power supplies 10 clocks 400 can be placed in an area. Inside, these inverted field-effect transistors 400 can have their metal layers 42 facing the same place, and a heat sink 50 with a larger size that can sufficiently shield all metal layers 42 is set here. As shown in FIG. 5, the area of the heat sink 400 and the heat sink 512 are larger than the total area of the heat sink fins 52 and the heat sink fins 512 individually. Therefore, the effect of power management can be further increased. Secondly, the heat dissipation fins 5 12 of the heat sink 51 are mainly used for heat dissipation. Therefore, except for the shape disclosed in this embodiment, the cross-sectional dimensions are the same as each other and are arranged in a rectangular arrangement. The size can also be different (see Figure 6), and the way of arranging the heat sink 512 can also be a radial arrangement or other different aspects. In the preferred embodiment, although a reverse field effect transistor and its heat dissipation device 5G0 are used for explanation, those skilled in the art also know that the present invention can be applied to other similar electronic components. Moreover, since the pins 513 protruding below each heat sink 5! Are soldered to the computer motherboard 6 by means of interposition and surface adhesion (smt), the fixing method is very simple and easy to implement. 15 15 1231016 Shi Zhi's position, direction and number can have various combinations according to actual needs. Summarizing the above, the heat sink 500 of the present invention has an isolated thermally conductive tab 52 'that allows the metal layer 42 and the heat sink w, which are both of the same metal material, to conduct heat without conducting a short circuit of the electronic component, so the heat source can pass through. The metal layer 42 with good thermal conductivity, the thermal pad 52 and the heat sink Η 'quickly release heat to the outside' and the blowing of the cooling fan is more conducive to the cooling of the fan girl 512, which increases the heat dissipation effect. The feet 43 and the circuit copper collar on the main board 6 can also dissipate a part of the thermal energy, so a better heat dissipation effect can be achieved. On the other hand, the easy installation of the radiator 51 greatly improves the usability of the heat sink of the present invention, and increases the industrial applicability. On the other hand, the field-effect transistor of the present invention uses the design of the metal layer 仏 facing up, and the free end of the extension portion 422 is welded to the computer motherboard 6 in addition to increasing the heat dissipation effect. The extension of the metal layer 42 = 2 and the signal pins 43 balance and traction with each other to increase the t rate of the product without adding additional processing costs, so it also depends on the practicability. Furthermore, the extending portion 422 of the metal layer 42 can also be used as a grounding design 'to increase its applicability. So it can really achieve the purpose of invention. However, the above-mentioned ones are only the preferred embodiments of the present invention, and if not, the scope of implementation of the present invention is limited, that is, applications made in accordance with the present invention: Changes in effects and repairs should still fall within the scope of the invention patent. [Circular brief description] 10 1231016 Figure 1 A partial exploded view of the heat sink of the conventional metal oxide half field effect transistor; ® 2 is a side view of the heat sink of the conventional metal oxide half field effect transistor; 3 is a three-dimensional exploded view of the field effect transistor and the heat dissipation device of the present invention in a preferred embodiment; FIG. 4 is the field communication transistor and the heat dissipation device in the above preferred embodiment 5 is a side view of the computer main board; a view similar to that in FIG. 2 illustrates a state in which a heat sink can be installed on the metal layers of a plurality of transistors at the same time; / 6 is the preferred embodiment described above Another view of the medium heat-dissipating device 'illustrates that the heat-dissipating fins can have different sizes and shapes, etc .; and FIG. 7 is a side sectional view of a field effect transistor of the present invention. [Description of the main symbols of the drawings]
散熱裝置 421 基板 底座 422 延伸部 散熱鰭片 43 訊號接腳 電晶體 44 晶片 殼體 500 散熱裝置 頂面 51 散熱器 訊號接腳 511 底座 金屬層 512 散熱鰭片 電路板 513 插腳 場效電晶體 52 導熱墊片 殼體 6 電腦主機板 金屬層 61 插設孔Heat sink 421 Substrate base 422 Extension heat sink fin 43 Signal pin transistor 44 Chip housing 500 Heat sink top surface 51 Heat sink signal pin 511 Base metal layer 512 Heat sink fin circuit board 513 Pin field effect transistor 52 Thermal conductivity Gasket case 6 Computer motherboard metal layer 61 Insertion hole
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