TW200531186A - Chip package and process thereof - Google Patents

Chip package and process thereof Download PDF

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Publication number
TW200531186A
TW200531186A TW93105477A TW93105477A TW200531186A TW 200531186 A TW200531186 A TW 200531186A TW 93105477 A TW93105477 A TW 93105477A TW 93105477 A TW93105477 A TW 93105477A TW 200531186 A TW200531186 A TW 200531186A
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Taiwan
Prior art keywords
wafer
chip
active surface
patent application
hard cover
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TW93105477A
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Chinese (zh)
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TWI236717B (en
Inventor
Min-Chih Hsuan
Kai-Kuang Ho
Kuo-Ming Chen
Kuang-Hui Tang
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United Microelectronics Corp
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Priority to TW93105477A priority Critical patent/TWI236717B/en
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Publication of TWI236717B publication Critical patent/TWI236717B/en
Publication of TW200531186A publication Critical patent/TW200531186A/en
Priority to US11/563,514 priority patent/US7534653B2/en

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Abstract

A chip package and a process thereof are provided. The chip package comprises a chip and a rigid cover, wherein the chip has an active surface and a plurality of bond pads those are disposed on the former. The rigid cover is disposed on the active surface and the bond pads are exposed above the active surface by the rigid cover. The rigid cover can protect the active surface of the chip and improve the structural strength of the chip package. In addition, when the material of the rigid cover is a thermal conductive material such as copper or aluminum alloy, the thermal conductive efficiency of the chip package can be improved. Besides, when the rigid cover is made of a electrical conductive material and is electrically connected to the ground of the chip, the external electromagnetic interference (EMI) to the chip can be reduced.

Description

200531186 五、發明說明(υ 【發明所屬之技術領域】 本發明是有關於一種晶片封裝體及其製程,且特別是 有關於一種在晶片之主動表面上配置有硬質蓋體之晶片封 裝體及其製程。 【先前技術】 在半導體產業中,積體電路(Integrated Circuits, I C )的生產主要分為三個階段:積體電路的設計、積體電 路的製作及積體電路的封裝(Package)等。其中,裸晶 片係經由晶圓(W a f e r )製作、電路設計、光罩製作以及 切割晶圓等步驟而完成,而每一顆由晶圓切割所形成的裸 晶片,經由裸晶片上之銲墊(Bond Pad )與外部訊號電性 連接後,再以封膠材料將裸晶片加以包覆,其封裝之目的 在於防止裸晶片受到濕氣、熱量及雜訊的影響,並提供裸 晶片與外部電路,例如印刷電路板(P r i n t e d C i r c u i t Board, PCB)或其他封裝用基板之間電性連接的媒介,如 此即完成積體電路的封裝(Package)。 在高度情報化社會的今日,為符合電子裝置的高速處 理化、多功能化、積集化及小型輕量化等多方面的要求, 積體電路之封裝技術也不斷朝向微型化及高密度化發展。 在眾多之晶片封裝型態中’晶片尺寸封裝(Chip Scale Package, CSP)係泛指封裝體邊長約為内含之晶片邊長的 1 · 2倍以下,或者(晶片面積/封裝體面積)大於8 0 %以 上,而且封裝體之引腳間距限制在1 m m以下之封裝技術。 根據結構及使用材料的不同,晶片尺寸封裝大致可分為硬200531186 V. Description of the invention (υ [Technical field to which the invention belongs] The present invention relates to a chip package and its manufacturing process, and in particular to a chip package with a hard cover on the active surface of the chip and its [Previous technology] In the semiconductor industry, the production of integrated circuits (ICs) is mainly divided into three stages: the design of integrated circuits, the production of integrated circuits, and the packaging of integrated circuits (Package), etc. Among them, bare wafers are completed through wafer (Wafer) fabrication, circuit design, mask fabrication, and wafer dicing, and each bare wafer formed by wafer dicing is soldered on the bare wafer. After the Bond Pad is electrically connected to the external signal, the bare chip is covered with a sealing material. The purpose of the package is to prevent the bare chip from being affected by moisture, heat and noise, and to provide the bare chip with external Circuits, such as printed circuit boards (PCBs) or other packaging media used for electrical connection between substrates, thus completing the integration In today's highly informative society, in order to meet the requirements of high-speed processing, multifunctionalization, accumulation, and miniaturization of electronic devices, the packaging technology of integrated circuits has also continued to move toward micro The development of high-density and high-density. Among the many types of chip packaging, "Chip Scale Package (CSP)" refers generally to the side length of a package body which is approximately 1 · 2 times or less the side length of the contained chip, or ( (Chip area / package area) is greater than 80%, and the package pitch of the package is limited to less than 1 mm. According to the structure and materials used, chip size packages can be roughly divided into hard

12013twf.ptd 第9頁 200531186 五、發明說明(2) 式基板型(Rigid Interposer Type)、可撓性基板型 (Flex Interposer Type)、弓丨線架型(Custom Lead Frame Type)及晶圓級型(Wafer Level Type)等多種型 態。 有別於傳統以單一晶片(D i e )為加工標的的封裝技 術,晶圓級封裝(w a f e r 1 e v e 1 p a c k a g e )係以晶圓 (Wafer )為封裝處理的對象,其主要目的係在簡化晶片 之封裝製程,以節省時間及成本。在晶圓上之積體電路製 作完成以後,便可直接對整片晶圓進行封裝製程,其後再 進行晶圓切割(W a f e r S a w )的動作,以分別形成多個晶 片封裝體。 【發明内容】 因此,本發明的目的就是在提供一種晶片封裝體,其 具有較佳之結構強度,並可選擇性地具有較高之散熱效能 及抗電磁干擾能力。 本發明的另一目的是在提供一種晶片封裝製程,適用 於以晶圓級封裝技術來製作一晶片封裝結構,其具有較佳 之結構強度,並可選擇性地具有較高之散熱效能及抗電磁 干擾能力。 基於本發明之上述目的,本發明提出一種晶片封裝 體,其包括一晶片及一硬質蓋體,其中晶片具有一主動表 面(active surface)及多個銲塾,且這些銲塾係配置於 主動表面,而硬質蓋體亦配置於晶片之主動表面,且暴露 出這些銲墊於主動表面之上方。12013twf.ptd Page 9 200531186 V. Description of the Invention (2) Rigid Interposer Type, Flex Interposer Type, Custom Lead Frame Type and Wafer Level (Wafer Level Type) and other types. Different from the traditional packaging technology that uses a single die as the processing target, wafer-level packaging (wafer 1 eve 1 package) uses wafer as the object of package processing, and its main purpose is to simplify the wafer. Packaging process to save time and cost. After the fabrication of the integrated circuit on the wafer is completed, the entire wafer can be directly packaged, and then the wafer cutting (W af r S a w) operation can be performed to form a plurality of wafer packages respectively. [Summary of the Invention] Therefore, an object of the present invention is to provide a chip package which has better structural strength, and optionally has higher heat dissipation efficiency and anti-electromagnetic interference ability. Another object of the present invention is to provide a chip packaging process, which is suitable for manufacturing a chip packaging structure using wafer-level packaging technology, which has better structural strength, and can optionally have higher heat dissipation efficiency and anti-electromagnetic Interference ability. Based on the above object of the present invention, the present invention provides a chip package, which includes a wafer and a hard cover, wherein the wafer has an active surface and a plurality of solder pads, and the solder pads are disposed on the active surface. The hard cover is also disposed on the active surface of the chip, and these pads are exposed above the active surface.

12013twf.ptd 第10頁 200531186 五、發明說明(3) 依照本發明的較佳實施例所述之晶片封裝體,上述之 晶片更可具有一重佈線層,其係配置於主動表面上,並形 成上述之這些銲墊。 依照本發明的較佳實施例所述之晶片封裝體,上述之 硬質蓋體係以黏貼的方式,配置於晶片之主動表面,其中 更可以是藉由硬質蓋體之外圍,而黏貼於晶片之主動表 面。此外,硬質蓋體之材質可包括導電材質、絕緣材質或 透明材質等。 依照本發明的較佳實施例所述之晶片封裝體,上述之 晶片封裝體更可包括多個導電接點,其分別配置於上述之 銲墊上,且這些導電接點之相對於主動表面的高度係大於 硬質蓋體之相對於主動表面的高度。 依照本發明的較佳實施例所述之晶片封裝體,上述之 這些銲墊可具有多種不同之配置方式。舉例而言,這些銲 墊可以面陣列的方式,配置於晶片之主動表面,且硬質蓋 體更具有多個開口 ,其分別暴露出對應之這些銲墊。此 外,上述之這些銲墊亦可配置於主動表面之外圍,其中當 主動表面的輪廓為矩形時,銲墊係配置於主動表面之外圍 的至少一側。此時,晶片更可具有相對於主動表面之一背 面及多個連接線路,而這些連接線路之一端係分別連接至 這些銲墊,且這些連接線路更分別經由晶片之側緣表面而 延伸至晶片之背面,並分別形成一接合墊於晶片之背面。 值得注意的是,上述之接合墊可配置於晶片之背面的 外圍,或以面陣列的方式而配置於晶片之背面。另外,上12013twf.ptd Page 10 200531186 V. Description of the invention (3) According to the chip package according to the preferred embodiment of the present invention, the above chip may further have a heavy wiring layer, which is arranged on the active surface and forms the above. These pads. According to the chip package according to the preferred embodiment of the present invention, the above-mentioned hard cover system is arranged on the active surface of the chip in an adhesive manner. Among them, the hard cover can be adhered to the active part of the chip through the periphery of the hard cover. surface. In addition, the material of the hard cover may include a conductive material, an insulating material, or a transparent material. According to the chip package according to the preferred embodiment of the present invention, the above chip package may further include a plurality of conductive contacts, which are respectively arranged on the above-mentioned solder pads, and the height of these conductive contacts relative to the active surface is It is greater than the height of the hard cover relative to the active surface. According to the chip package according to the preferred embodiment of the present invention, the above-mentioned bonding pads can have a variety of different arrangements. For example, these pads can be arranged on the active surface of the wafer in an array manner, and the hard cover body has multiple openings, which respectively expose the corresponding pads. In addition, the above-mentioned pads can also be disposed on the periphery of the active surface. When the outline of the active surface is rectangular, the pads are disposed on at least one side of the periphery of the active surface. At this time, the chip may have a back surface opposite to the active surface and a plurality of connection lines, and one end of the connection lines is respectively connected to the pads, and the connection lines extend to the chip through the side edge surfaces of the chip And a bonding pad is formed on the back surface of the wafer respectively. It is worth noting that the above-mentioned bonding pads can be arranged on the periphery of the back surface of the wafer, or can be arranged on the back surface of the wafer in a surface array manner. In addition, on

12013twf.ptd 第11頁 200531186 五、發明說明(4) 述之晶片封裝體更包括多個導電接點,其分別配置於這些 接合墊上。 基於本發明之上述目的,本發明更提出一種晶片封裝 製程,首先,提供一晶圓,其中此晶圓具有一主動表面及 對應之一背面,且此晶圓具有一第一晶片區域及相鄰之一 第二晶片區域。此外,此晶圓更具有多個第一銲墊及多個 第二銲墊,其分別配置於第一晶片區域之主動表面及第二 晶片區域之主動表面。接著,形成多個貫孔於晶圓上,而 這些貫孔係貫穿晶片,並連接主動表面及背面,且依序排 列於第一區域及第二區域的交界處。 然後,形成多個第一連接線路及多個第二連接線路於 晶圓上,其中這些第一連接線路之一端係分別穿過前述之 貫孔,而分別電性連接於前述之第一銲墊,且這些第一連 接線路之另一端更延伸至第一晶片區域之背面,並分別形 成一第一接合墊於第一晶片區域之背面。此外,前述之第 二連接線路之一端亦分別穿過這些貫孔,而分別電性連接 於前述之第二銲墊,且這些第二連接線路之另一端更延伸 至第二晶片區域之背面,並分別形成一第二接合墊於第二 晶片區域之背面。另外,局部位於這些貫孔之内的第一連 接線路更可相連於局部位於這些貫孔之内的第二連接線 路。 接著,將一第一硬質蓋體及一第二硬質蓋體分別配置 於第一晶片區域之主動表面及第二晶片區域之主動表面。 然後,沿著晶圓之第一晶片區域及第二晶片區域之交界處12013twf.ptd Page 11 200531186 V. The chip package described in (4) of the invention further includes a plurality of conductive contacts, which are respectively arranged on the bonding pads. Based on the above object of the present invention, the present invention further proposes a wafer packaging process. First, a wafer is provided, wherein the wafer has an active surface and a corresponding back surface, and the wafer has a first wafer area and an adjacent area. One of the second wafer regions. In addition, the wafer further has a plurality of first pads and a plurality of second pads, which are respectively disposed on the active surface of the first wafer region and the active surface of the second wafer region. Then, a plurality of through-holes are formed on the wafer, and these through-holes penetrate the wafer, connect the active surface and the back surface, and are sequentially arranged at the junction of the first region and the second region. Then, a plurality of first connection lines and a plurality of second connection lines are formed on the wafer, and one end of the first connection lines respectively passes through the aforementioned through hole, and is electrically connected to the aforementioned first pads, respectively. Moreover, the other ends of the first connection lines further extend to the back surface of the first chip region, and a first bonding pad is formed on the back surface of the first chip region, respectively. In addition, one end of the aforementioned second connection lines also passes through the through holes, respectively, and is electrically connected to the aforementioned second pads, and the other ends of the second connection lines further extend to the back of the second chip region. A second bonding pad is formed on the back of the second wafer region. In addition, the first connection line partially located in the through holes may be further connected to the second connection line partially located in the through holes. Then, a first hard cover and a second hard cover are respectively disposed on the active surface of the first wafer region and the active surface of the second wafer region. Then, along the junction of the first wafer region and the second wafer region of the wafer

12013twf.ptd 第12頁 200531186 五、發明說明(5) 來切割晶圓,且同時切割局部位於上述貫孔之内的第一連 接線路及相連之局部位於上述貫孔之内的第二連接線路。 最後,將晶圓之第一晶片區域及第二晶片區域以切割的方 式個別獨立於晶圓之其他部分’使得晶圓之弟"晶片區域 及第一硬質蓋體成為一第一晶片封裝體,並且使得晶圓之 第二晶片區域及第二硬質蓋體成為一第二晶片封裝體。 依照本發明的較佳實施例所述之晶片封裝製程,其中 在將晶圓之第一晶片區域及第二晶片區域以切割的方式分 別獨立於晶圓之其他部分之前,更可形成多個導電接點於 上述之第一接合塾及第二接合塾。此外,上述之第一硬質 蓋體係以黏貼的方式,配置於第一晶片區域之主動表面, 其中更可以是藉由第一硬質蓋體之外圍而黏貼至第一晶片 區域之主動表面。另外,第一硬質蓋體之材質可包括導電 材質、絕緣材質及透明材質等。 依照本發明的較佳實施例所述之晶片封裝製程,上述 之第一接合墊可配置於第一晶片區域之背面的外圍,或可 以面陣列的方式而配置於第一晶片區域之背面。此外,將 局部之第一連接線路分別形成於上述之貫孔内的方法包括 電鍍。另外,在配置第一硬質蓋體及第二硬質蓋體時,第 一硬質蓋體及第二硬質蓋體可相互結構性連接,而在切割 晶圓時,更包括切割第一硬質蓋體及第二硬質蓋體之相連 部分,用以分離第一硬質蓋體及第二硬質蓋體。 基於上述,本發明之晶片封裝體及其製程乃是在晶片 之主動表面上配置一硬質蓋體,用以保護晶片之主動表12013twf.ptd Page 12 200531186 V. Description of the invention (5) Cut the wafer, and at the same time cut the first connection line partially inside the above-mentioned through hole and the second connection line partially connected inside the above-mentioned through hole. Finally, the first wafer region and the second wafer region of the wafer are individually separated from the other parts of the wafer in a slicing manner, so that the "chip brother" wafer region and the first hard cover body become a first chip package. And make the second chip region and the second hard cover of the wafer a second chip package. According to the wafer packaging process according to the preferred embodiment of the present invention, before the first wafer region and the second wafer region of the wafer are separated from the other parts of the wafer by cutting, respectively, a plurality of conductive layers can be formed. The contacts are at the first joint 塾 and the second joint 上述 described above. In addition, the above-mentioned first hard cover system is arranged on the active surface of the first chip region in an adhesive manner, and moreover, it can be adhered to the active surface of the first chip region through the periphery of the first hard cover body. In addition, the material of the first hard cover may include a conductive material, an insulating material, and a transparent material. According to the chip packaging process according to the preferred embodiment of the present invention, the first bonding pads described above may be disposed on the periphery of the back surface of the first wafer region, or may be disposed on the back surface of the first wafer region in a surface array manner. In addition, a method of forming the partial first connection lines in the above-mentioned through holes includes plating. In addition, when the first hard cover and the second hard cover are configured, the first hard cover and the second hard cover can be structurally connected to each other, and when the wafer is cut, the first hard cover and the second hard cover are further cut. The connecting portion of the second hard cover is used to separate the first hard cover and the second hard cover. Based on the above, the chip package of the present invention and its manufacturing process are configured with a hard cover on the active surface of the chip to protect the active watch of the chip.

12013twf.ptd 第13頁 200531186 五、發明說明(6) 面,並增加晶片封裝體之結構強度。此外,當硬質蓋體之 材質為銅或鋁合金等導熱材質時,硬質蓋體可提高晶片封 裝體之散熱效能。另外,當硬質蓋體之材質為導電材質 時,電性連接於晶片之接地端的硬質蓋體更可降低外界對 晶片之電磁干擾。值得注意的是,本發明之晶片封裝製程 更可在晶片之背面形成多個接合墊,以使得晶片封裝體可 藉由其晶片之背面的這些接合墊來接合至一電路板(PCB )或基板(substrate)上的多個接點。 為讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細 說明如下。 【實施方式】 【第一實施例】 請參考第1A及1B圖,其中第1A圖繪示本發明之第一實 施例之第一種晶片封裝體的俯視圖,而第1 B圖繪示第1 A圖 之I 一 I /線的剖面圖。晶片封裝體1 0 0包括一晶片1 1 0、一 硬質蓋體1 2 0及一黏著層1 3 0 ,其中晶片1 1 0係為一晶圓 (未繪示)所形成多顆尚未切割的晶片之一,而晶片1 1 0 之形狀例如為一矩形並具有一主動表面1 1 2及多個銲墊 1 1 4,且銲墊1 1 4係配置於主動表面1 1 2之外圍。此外,硬 質蓋體120更藉由一黏著層(adhesive layer) 130 ,而黏 貼於晶片1 1 0之主動表面1 1 2,且銲墊1 1 4係環繞於硬質蓋 體1 2 0之外圍。 請同時參考第ΙΑ、1B及1C圖,其中第1C圖繪示第1A圖12013twf.ptd Page 13 200531186 V. Description of the invention (6) and increase the structural strength of the chip package. In addition, when the material of the hard cover is a thermally conductive material such as copper or aluminum alloy, the hard cover can improve the heat dissipation performance of the chip package. In addition, when the material of the hard cover is a conductive material, the hard cover electrically connected to the ground end of the chip can further reduce electromagnetic interference from the outside to the chip. It is worth noting that the wafer packaging process of the present invention can further form a plurality of bonding pads on the back surface of the wafer, so that the chip package can be bonded to a circuit board (PCB) or substrate through the bonding pads on the back surface of the wafer. (Substrate) multiple contacts. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, preferred embodiments are described below in detail with the accompanying drawings, as follows. [Embodiment] [First embodiment] Please refer to FIGS. 1A and 1B, where FIG. 1A illustrates a top view of a first chip package according to a first embodiment of the present invention, and FIG. 1B illustrates a first Section A of I-I / line. The chip package 100 includes a chip 110, a hard cover 120, and an adhesive layer 130. The chip 110 is a plurality of uncut wafers formed by a wafer (not shown). One of the wafers, and the shape of the wafer 1 10 is, for example, a rectangle and has an active surface 1 12 and a plurality of pads 1 1 4. The pads 1 1 4 are arranged on the periphery of the active surface 1 12. In addition, the hard cover 120 is adhered to the active surface 1 1 2 of the wafer 1 10 through an adhesive layer 130, and the pads 1 4 are surrounded by the periphery of the hard cover 120. Please also refer to Figures IA, 1B and 1C, where Figure 1C shows Figure 1A

12013twf.ptd 第14頁 200531186 五、發明說明(7) 之第一種晶片封裝體,其組裝至一印刷電路板的剖面圖。 這些銲墊1 1 4上更可分別配設一導電接點1 1 6,例如導電凸 塊(conductive bump)等,其中這些導電接點116之相對 於主動表面112的高度係大於硬質蓋體120之相對於主動表 面1 1 2的高度,以使晶片封裝體1 〇 〇得以藉由導電接點1 1 6 而組裝至一印刷電路板1 4 0上,其中印刷電路板1 4 0可具有 多個接合墊1 4 2,而晶片封裝體1 〇 〇之銲墊1 1 4係藉由導電 接點1 1 6而與印刷電路板1 4 0之接合墊1 4 2電性連接。此 外,尚可藉由控制導電接點1 1 6或硬質蓋體1 2 0之相對於晶 片110之高度,而可選擇性地讓硬質蓋體120接觸或不接觸 印刷電路板1 4 0。在某些散熱或電性的考量之下,硬質蓋 體1 2 0可以結構性或電性連接至印刷電路板1 4 0。另外,在 第1 A〜1 C圖中,晶片1 1 0之銲墊1 1 4並不限於配設於晶片 110之主動表面112的四周,亦可配設於晶片11〇之主動表 面1 1 2的早側或兩側(例如相鄰兩側或相對兩侧)〇 請參考第2A及2B圖,其中第2A圖繪示本發明之第一實 施例之第二種晶片封裝體的俯視圖,而第2 B圖繪示第2 A圖 之Π — Π /線的剖面圖。與上述之第一種晶片封裝體相較 之下,第二種晶片封裝體200之晶片210具有多個銲墊 2 1 4,其係以面陣列方式配置於晶片2 1 0之主動表面2 1 2, 其中晶片210之主動表面212上可具有一重佈線層 (Re-Distribution Layer, RDL )(未繪示),此重佈線 層可使原先位於主動表面2 1 2之四周的銲墊2 1 4以面陣列的 方式重新排列於主動表面2 1 2上。此外,硬質蓋體2 2 0係藉12013twf.ptd Page 14 200531186 V. Description of Invention (7) The first type of chip package, which is assembled to a cross-sectional view of a printed circuit board. A conductive contact 1 1 6, such as a conductive bump, may be provided on each of the solder pads 1 1 4. The height of the conductive contacts 116 relative to the active surface 112 is greater than the rigid cover 120. The height relative to the active surface 1 12 so that the chip package 100 can be assembled on a printed circuit board 1 40 through conductive contacts 1 16, where the printed circuit board 1 40 can have multiple Each of the bonding pads 1 4 2 is electrically connected to the bonding pads 14 2 of the printed circuit board 1 40 through the conductive contacts 1 1 4 of the chip package 100. In addition, by controlling the height of the conductive contact 1 16 or the hard cover 120 with respect to the wafer 110, the hard cover 120 can be selectively brought into contact with or not in contact with the printed circuit board 140. Under certain thermal or electrical considerations, the rigid cover 120 can be structurally or electrically connected to the printed circuit board 140. In addition, in FIGS. 1A to 1C, the pads 1 1 4 of the wafer 1 10 are not limited to being disposed around the active surface 112 of the wafer 110, and may be disposed on the active surface 1 1 of the wafer 110. The early side or two sides of 2 (such as adjacent sides or opposite sides). Please refer to FIGS. 2A and 2B, where FIG. 2A shows a top view of a second chip package according to the first embodiment of the present invention. Fig. 2B shows a cross-sectional view taken along line Π- Π / of Fig. 2A. Compared with the first type of chip package described above, the chip 210 of the second type of chip package 200 has a plurality of bonding pads 2 1 4 which are arranged on the active surface 2 1 of the chip 2 1 in a surface array manner. 2. The active surface 212 of the chip 210 may have a re-distribution layer (RDL) (not shown). This re-wiring layer may allow the pads 2 1 4 originally located around the active surface 2 1 2 Rearranged on the active surface 2 1 2 in an area array manner. In addition, the hard cover 2 2 0 is borrowed

12013twf.ptd 第15頁 200531186 五、發明說明(8) 由黏著層230而黏貼於晶片210之主動表面212 ,且硬質蓋 體2 2 0係具有多個開口 2 2 2,其分別對應於這些銲墊2 1 4並 曝露出這些銲墊214。 請參考第2 C圖,其繪示第2 A圖之第二種晶片封裝體, 其組裝至一印刷電路板的剖面圖。在晶片2 1 0之以面陣列 方式排列的這些銲墊2 1 4上分別一導電接點2 1 6,其中這些 0 導電接點2 1 6之相對於主動表面2 1 2的高度係大於硬質蓋體 2 2 0之相對於主動表面2 1 2的高度,以使得晶片封裝體2 0 0 得以藉由這些導電接點2 1 6而組裝至一印刷電路板2 4 0上, 其中印刷電路板240可具有多個接合墊2 4 2,而晶片封裝體 2 0 0之銲墊214係藉由導電接點216而與印刷電路板2 4 0之接 合墊242電性連接。 在第一實施例之兩種晶片封裝體中,硬質蓋體係全面 性地覆蓋於晶圓上,並在這些銲墊上分別配置一導電接點 (例如導電凸塊)以後,再將晶圓切割為多個獨立之晶片 封裝體。值得注意的是,除可在切割晶圓之前預先形成導 電接點於晶片之銲墊,以供晶片封裝體來組裝至印刷電路 板或其他載板之外,亦可選擇先將導電接點形成於印刷電 路板之接合墊上,再經由這些導電接點來將晶片封裝體組 裝至印刷電路板。 【第二實施例】 除了上述之第一實施例將多個導電接點配置於晶片之 主動表面的多個銲墊以外,本發明之第二實施例乃是利用 多條連接線路,分別將晶片之主動表面的這些銲墊,經由12013twf.ptd Page 15 200531186 V. Description of the invention (8) The active surface 212 of the chip 210 is adhered by the adhesive layer 230, and the hard cover 2 2 0 has a plurality of openings 2 2 2 which correspond to these solders, respectively. The pads 2 1 4 also expose these pads 214. Please refer to FIG. 2C, which illustrates a cross-sectional view of the second chip package of FIG. 2A assembled to a printed circuit board. A conductive contact 2 1 6 is formed on each of the pads 2 1 4 arranged in a surface array manner on the wafer 2 10, and the height of the 0 conductive contacts 2 1 6 relative to the active surface 2 1 2 is greater than the rigidity. The height of the cover body 2 2 0 relative to the active surface 2 1 2 enables the chip package 2 0 0 to be assembled on a printed circuit board 2 4 0 through these conductive contacts 2 1 6, wherein the printed circuit board 2 The 240 may have a plurality of bonding pads 242, and the bonding pads 214 of the chip package 200 are electrically connected to the bonding pads 242 of the printed circuit board 240 through the conductive contacts 216. In the two chip packages of the first embodiment, the hard cover system is completely covered on the wafer, and a conductive contact (such as a conductive bump) is respectively arranged on these pads, and then the wafer is cut into Multiple independent chip packages. It is worth noting that, in addition to forming conductive pads on the wafer before the dicing of the wafer, for the chip package to be assembled to a printed circuit board or other carrier board, you can also choose to form the conductive contacts first. On the bonding pads of the printed circuit board, the chip package is assembled to the printed circuit board through these conductive contacts. [Second Embodiment] In addition to the above-mentioned first embodiment, in which a plurality of conductive contacts are arranged on a plurality of bonding pads on the active surface of a wafer, a second embodiment of the present invention is to use a plurality of connection lines to separately separate the wafers. Of the active surface of these pads,

12013twf.ptd 第16頁 200531186 五、發明說明(9) 晶片之側面而延伸至晶片之背面,並在晶片之背面形成多 個接合墊,而將多個導電接點分別配置在晶片之背面的這 些接合墊*上。下文將就本發明之第二實施例的晶片封裝體 及其製程作詳細說明。 t 請參考第3A〜3F圖及第4A〜4F圖,其中第3A〜3F圖繪 示本發明之第二實施例之一種晶片封裝製程的俯視圖,而θ 第4Α〜4F圖分別繪示第3Α〜3F圖之!Π —瓜,線的剖面圖。 首先,如第3Α及4Α圖所示,提供一晶圓302,且晶圓302具 有一主動表面3 1 2及對應之一背面3 1 6。此外,晶圓3 〇 2更 具有一第一晶片區域310a及相鄰之一第二晶片區域31〇b, 其中第一晶片區域310a之主動表面312上配置有多個第一 鋅塾314a,而第二晶片區域3l〇b之主動表面312上配置有 多個第二鲜塾314b。 一曰接著,如第3B及4B圖所示,在第一晶片區域31〇a及第 二晶片區域3 1 Ob的交界處,例如以雷射鑽孔或機械鑽孔的 方式升> 成多個貫孔3 1 8於晶圓3 〇 2上,其中這些貫孔3 1 8係 貫穿晶圓302 ’並連接晶圓3〇2之主動表面312及背面316, 且依序排列於第一晶片區域3 1〇a及第二晶片區域31〇b的交 界處。 口然後’如第3 C及4 C圖所示,藉由例如電鍍等方式在晶 j3 0 2上形成多個第一連接線路3 2 2a及多個第二連接線路 2b ’其中這些第一連接線路“以之一端係分別穿過這些 I孔318,而電性連接於這些第一銲墊31“,且這些第一 、接線路3 22a之另一端更延伸至第一晶片區域31〇a之背面12013twf.ptd Page 16 200531186 V. Description of the invention (9) The side of the wafer extends to the back of the wafer, and a plurality of bonding pads are formed on the back of the wafer, and a plurality of conductive contacts are respectively arranged on the back of the wafer. Bonding pads *. The chip package and its manufacturing process according to the second embodiment of the present invention will be described in detail below. t Please refer to FIGS. 3A to 3F and FIGS. 4A to 4F, where FIGS. 3A to 3F show a top view of a chip packaging process according to the second embodiment of the present invention, and θ FIGS. 4A to 4F show 3A ~ 3F picture! Π — melon, line cross-section. First, as shown in FIGS. 3A and 4A, a wafer 302 is provided, and the wafer 302 has an active surface 3 1 2 and a corresponding back surface 3 1 6. In addition, the wafer 300 has a first wafer region 310a and an adjacent second wafer region 31b. The active surface 312 of the first wafer region 310a is provided with a plurality of first zinc alloys 314a, and On the active surface 312 of the second wafer region 31b, a plurality of second fresh wafers 314b are disposed. Next, as shown in FIGS. 3B and 4B, at the boundary between the first wafer region 31a and the second wafer region 3 1 Ob, for example, laser drilling or mechanical drilling is used to increase the ratio> A plurality of through holes 3 1 8 are formed on the wafer 300. The through holes 3 1 8 penetrate the wafer 302 ′ and connect the active surface 312 and the back surface 316 of the wafer 300 and are sequentially arranged on the first wafer. The boundary between the region 3 10a and the second wafer region 31b. Then, as shown in FIGS. 3C and 4C, a plurality of first connection lines 3 2 2a and a plurality of second connection lines 2b are formed on the crystal j3 0 2 by, for example, plating or the like. Among these, the first connections The lines "through one end are respectively passed through the I holes 318, and are electrically connected to the first pads 31", and the other ends of the first and connection lines 3 22a extend to the first chip area 31a. back

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316,並分別形成一第一接合墊3 24a。此外,這些第二 接線路3 2 2 b之一端亦分別穿過這些貫孔318,而^ = 於這些第二銲墊314b,且第二連接線路3 2 2b之另一端 伸至第二晶片區域3丨0b之背面316,並分別形成一第二接 合塾3 24 b。值得注意的是,由於第一連接線路3 2 2 a與第二 連接線路3 2 2b係為同時經由電鍍形成,因此局部位於貫孔 318之内的第一連接線路3 2 2 a可能與局部位於貫孔318之内 的第一連接線路322b相連。 接著,如第3D及4D圖所示,將一第一硬質蓋體32〇&及 一第二硬質蓋體3 2 0 b分別藉由一黏著層33〇,而黏貼於第 一晶片區域310a之主動表面312及第二晶片區域3 1〇b之主 ,表面3 1 2。此外,為了符合散熱需求或電性功能上的考 量’第一硬質蓋體320a及第二硬質蓋體320b之材質可為導 電材質、絕緣材質或透明材質等。另外,由於本發明之晶 片封裝製程係可採用晶圓級封裝製程,所以第一硬質蓋體 320a與第一硬質蓋體320b亦可為一體成型之結構,亦即第 硬負蓋體320a與第二硬質蓋體320b可藉由連接桿320c或 其他形狀之連接結構來相互結構性地連接,如此一來,僅 需單了定位的動作,便可完成將第一硬質蓋體32〇a及第二 硬質蓋體320b配置於晶圓302之主動表面312上的步驟。 接著,如第3E及4E圖所示,例如以機械切割或雷射切 ,等方式,沿著晶圓3 0 2之第一晶片區域3 i 〇 a及第二晶片 區域3 1 0 b之交界處來切割晶圓3 〇 2,且同時切割局部位於 貫孔318之内的第一連接線路3223及相連之局部位於貫孔316, and a first bonding pad 3 24a is formed respectively. In addition, one end of the second connection lines 3 2 2 b also passes through the through holes 318, respectively, and ^ = is on the second pads 314b, and the other end of the second connection line 3 2 2b extends to the second chip area. 3 丨 0b on the back surface 316, and respectively form a second joint 塾 3 24b. It is worth noting that, because the first connection line 3 2 2 a and the second connection line 3 2 2b are formed by electroplating at the same time, the first connection line 3 2 2 a located partially within the through hole 318 may be located partially The first connection lines 322b within the through holes 318 are connected. Next, as shown in FIGS. 3D and 4D, a first hard cover body 32 0 & and a second hard cover body 3 2 0 b are respectively adhered to the first chip area 310 a through an adhesive layer 33 0. The active surface 312 and the main surface of the second wafer region 3 10b, the surface 3 1 2. In addition, in order to meet heat dissipation requirements or electrical function considerations, the materials of the first hard cover 320a and the second hard cover 320b may be conductive, insulating, or transparent. In addition, since the wafer packaging process of the present invention can adopt a wafer-level packaging process, the first hard cover 320a and the first hard cover 320b can also be formed integrally, that is, the first hard negative cover 320a and the first The two hard cover bodies 320b can be structurally connected to each other by a connecting rod 320c or a connection structure of other shapes. In this way, the positioning of the first hard cover body 32a and the first hard cover body can be completed. The step of disposing two hard covers 320b on the active surface 312 of the wafer 302. Next, as shown in FIGS. 3E and 4E, for example, by mechanical cutting or laser cutting, etc., along the boundary between the first wafer region 3 i 〇a and the second wafer region 3 1 0 b of the wafer 3 2 The wafer 3 02 is cut at the same time, and the first connection line 3223 partially located in the through hole 318 and the connected part is located in the through hole at the same time.

200531186200531186

之内的一連接線路3 2 2 b。因此,晶片3 1 0之側緣將具 夕個凹陷表面318a (即原先之這些貫孔318的一半)其 凹陷於晶片3 1 0之側緣的表面,而這些連接線路3 2 2之局部 係分別配置於14些凹陷表面3丨8 a,使得這些連接線路3 2 2 I分別延伸經過這些凹陷表面318a,而電性連接於對應之 杯墊314及接合墊324之間。此外,當第一硬質蓋體32〇a與 第二硬質蓋體3 2 0b於切割前為上述之一體成型之結構時, 更可同時切開這些連接桿3 2 0 c,用以分離第一硬質蓋體 320a及第二硬質蓋體320b。 最後’如第3 F及4 F圖所示,例如以機械切割或雷射切 割等方式,將晶圓3 0 2之第一晶片區域3 i 〇 a及第二晶片區 域3 1 0 b個別獨立於晶圓3 〇 2之其他部分,使得晶圓3 0 2之第 一晶片區域310a及第一硬質蓋體32〇a成為一第一晶片封裝 體3 0 0 a,並且使得晶圓3 0 2之第二晶片區域31 0b及第二硬 質蓋體320b成為一第二晶片封裝體3〇〇b。 請參考第5圖,其中第5圖繪示第3F圖之晶片封裝體, 其組裝至一印刷電路板的剖面圖。晶片封裝體3 〇 〇可包括 —晶片310 、一硬質蓋體3 2 0及一黏著層3 3 0 ,其中晶片310 係約略為一矩形’並具有一主動表面312及相應之一背面 316 ’且晶片310更具有多個銲墊314,其配置於主動表面 312之周緣,而這些連接線路322更延伸至晶片310之背面 3 1 6而形成多個接合墊3 2 4。此外,晶片封裝體3 0 0之多個 接合塾3 2 4係可經由一預銲塊(P r e - s ο 1 d e r )、一異方性 導電膠(ACP)或一異方性導電薄膜(ACF)等連接媒介A connection line within 3 2 2 b. Therefore, the side edge of the wafer 3 1 0 will have a recessed surface 318a (ie, half of the original through-holes 318), which is recessed on the surface of the side edge of the wafer 3 1 0, and the local lines of these connection lines 3 2 2 They are respectively disposed on the 14 recessed surfaces 3 丨 8 a, so that the connection lines 3 2 2 I respectively extend through the recessed surfaces 318 a, and are electrically connected between the corresponding coasters 314 and the bonding pads 324. In addition, when the first hard cover body 32 0a and the second hard cover body 3 2 0b are formed into one of the above-mentioned structures before cutting, the connecting rods 3 2 0 c can be cut at the same time to separate the first hard cover body. The cover body 320a and the second hard cover body 320b. Finally, as shown in Figures 3F and 4F, for example, the first wafer region 3 i 〇a and the second wafer region 3 1 0 b of the wafer 3 are individually separated by mechanical cutting or laser cutting. In other parts of the wafer 3 02, the first wafer region 310a and the first hard cover 32a of the wafer 3 02 become a first wafer package 3 0a, and the wafer 3 02 The second chip region 3 10b and the second hard cover 320b become a second chip package 300b. Please refer to FIG. 5, which is a cross-sectional view of the chip package of FIG. 3F assembled to a printed circuit board. The chip package 300 may include a chip 310, a hard cover body 320, and an adhesive layer 3300. The chip 310 is approximately a rectangle ', and has an active surface 312 and a corresponding back surface 316'. The chip 310 further has a plurality of bonding pads 314, which are disposed on the periphery of the active surface 312, and the connection lines 322 extend to the back surface 3 1 6 of the chip 310 to form a plurality of bonding pads 3 2 4. In addition, a plurality of joints 3, 2 and 4 of the chip package 300 can be passed through a pre-solder block (P re-s ο 1 der), an anisotropic conductive adhesive (ACP), or an anisotropic conductive film ( ACF) and other connection media

12〇l3twf.ptd 第19頁 200531186 五、發明說明(12) (未繪示),而連接至印刷電路板3 4 0上之多個接合墊 3 4 2 ° 請參考第6圖,其繪示本發明之第二實施例的另一種 晶片封裝結構,其組裝至一印刷電路板的剖面圖。相較於 第5圖之以周邊方式配置於晶片3 1 0之背面3 1 6的這些接合 墊3 2 4,第6圖之晶片封裝體3 0 1的這些接合墊3 2 4係以面陣 列的方式配置於晶片3 1 0之背面3 1 6,且這些接合墊3 2 4更 可分別經由一導電接點3 5 0 (例如導電凸塊等),而連接 至印刷電路板3 4 0之接合墊3 4 2。 基於上述,本發明之第二實施例乃是利用多條連接線 路,分別將晶片之主動表面的這些銲墊,經由晶片之側面 而延伸至晶片之背面,並在晶片之背面形成多個接合墊, 而將多個導電接點分別配置在晶片之背面的這些接合墊 上。因此,當晶片封裝體接合至印刷電路板時,可將晶片 之主動表面與硬質蓋體暴露於外界,當硬質蓋體之材質為 一透明材質時,第二實施例之晶片封裝體更可應用於例如 CMOS影像感測晶片(CMOS Image Sensor, CIS)及太陽能 電池(Solar Cel 1 )等類型之光電元件或生化晶片 (Bio-Chip ) ° 綜上所述,本發明之晶片封裝體及其製程乃是在晶片 之主動表面上配置一硬質蓋體,用以保護晶片之主動表 面,並增加晶片封裝體之結構強度。此外,當硬質蓋體之 材質為銅或鋁合金等導熱材質時,硬質蓋板可提高晶片封 裝體之散熱效能。另外,當硬質蓋體之材質為導電材質或12〇l3twf.ptd Page 19 200531186 V. Description of the invention (12) (not shown), and a plurality of bonding pads 3 4 2 connected to the printed circuit board 3 4 0 Please refer to FIG. 6 for a drawing A cross-sectional view of another chip packaging structure according to a second embodiment of the present invention, which is assembled to a printed circuit board. Compared with the bonding pads 3 2 4 arranged peripherally on the back surface 3 1 6 of the wafer 3 1 0 in FIG. 5, the bonding pads 3 2 4 of the wafer package 3 0 1 in FIG. 6 are in an area array. The method is arranged on the back 3 1 6 of the wafer 3 1 0, and the bonding pads 3 2 4 can be connected to the printed circuit board 3 4 0 through a conductive contact 3 5 0 (such as a conductive bump). Bonding pads 3 4 2. Based on the above, the second embodiment of the present invention uses a plurality of connection lines to respectively extend the pads on the active surface of the wafer to the back of the wafer through the side of the wafer, and form a plurality of bonding pads on the back of the wafer. A plurality of conductive contacts are respectively arranged on the bonding pads on the back surface of the wafer. Therefore, when the chip package is bonded to the printed circuit board, the active surface of the chip and the hard cover can be exposed to the outside. When the material of the hard cover is a transparent material, the chip package of the second embodiment is more applicable. For photovoltaic devices or bio-chips such as CMOS Image Sensor (CIS) and Solar Cell 1 (Bio-Chip) ° In summary, the chip package of the present invention and its process A hard cover is arranged on the active surface of the chip to protect the active surface of the chip and increase the structural strength of the chip package. In addition, when the material of the hard cover is a thermally conductive material such as copper or aluminum alloy, the hard cover can improve the heat dissipation performance of the chip package. In addition, when the material of the hard cover is a conductive material or

12013twf.ptd 第20頁 200531186 五、發明說明(13) 具有導電層時,電性連接於晶片之接地端的硬質蓋板更可 降低外界對晶片之電磁干擾。並且,當硬質蓋體之材質係 為透明材質,以使光線能照射晶片之主動表面時,晶片封 裝體更可適用作為光電元件或生物晶片等之封裝型態。除 此之外,本發明之晶片封裝製程更可在晶片之背面形成多 個接合墊,以使得晶片封裝體可藉由其晶片之背面的這些 接合墊來接合至一電路板(PCB)或基板(substrate)上 的多個接點。 雖然本發明已以一較佳實施例揭露如上,然其並非用 以限定本發明,任何熟習此技藝者,在不脫離本發明之精 神和範圍内,當可作些許之更動與潤飾,因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。12013twf.ptd Page 20 200531186 V. Description of the invention (13) With a conductive layer, a hard cover plate electrically connected to the ground end of the chip can further reduce electromagnetic interference from the outside world to the chip. In addition, when the material of the hard cover is transparent so that light can illuminate the active surface of the chip, the chip package is more suitable for packaging types such as photovoltaic elements or biochips. In addition, the wafer packaging process of the present invention can further form a plurality of bonding pads on the back surface of the wafer, so that the chip package can be bonded to a circuit board (PCB) or a substrate through these bonding pads on the back surface of the wafer (Substrate) multiple contacts. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some changes and retouch without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.

12013twf.ptd 第21頁 200531186 圖式簡單說明 第1 A圖繪示為本發明之第一實施例之第一種晶片封裝 體的俯視圖。 第1 B圖繪示為第1 A圖之I — I /線的剖面圖。 第1C圖繪示為第1A圖之第一種晶片封裝體,其組裝至 一印刷電路板的剖面圖。 第2 A圖繪示為本發明之第一實施例之第二種晶片封裝 體的俯視圖。 第2B圖繪示為第2A圖之Π — Π /線的剖面圖。 第2C圖繪示為第2A圖之第二種晶片封裝體,其組裝至 一印刷電路板的剖面圖。 第3 A〜3 F圖繪示為本發明之第二實施例之一種晶圓級 的晶片封裝製程的俯視圖。 第4A〜4F圖分別繪示為第3A〜3F圖之皿一ΠΙ /線的剖 面圖。 第5圖繪示為第3 F圖之晶片封裝體,其組裝至一印刷 電路板的剖面圖。 第6圖繪示為本發明之第二實施例之另一種晶片封裝 體,其組裝至一印刷電路板的剖面圖。 【圖式標示說明】 1 0 0 :晶片封裝體 1 1 0 :晶片 1 1 2 :主動表面 1 1 4 :銲墊 1 1 6 :導電接點12013twf.ptd Page 21 200531186 Brief Description of Drawings Figure 1A shows a top view of the first chip package of the first embodiment of the present invention. Figure 1B is a cross-sectional view taken along line I-I / of Figure 1A. FIG. 1C is a cross-sectional view of the first chip package of FIG. 1A assembled to a printed circuit board. Figure 2A is a top view of a second chip package according to the first embodiment of the present invention. FIG. 2B is a cross-sectional view taken along line Π-Π / of FIG. 2A. FIG. 2C shows a cross-sectional view of the second chip package of FIG. 2A assembled to a printed circuit board. 3A to 3F are top views of a wafer-level wafer packaging process according to a second embodiment of the present invention. Figures 4A to 4F are cross-sectional views of plates III / I of Figures 3A to 3F, respectively. FIG. 5 is a cross-sectional view of the chip package of FIG. 3F assembled to a printed circuit board. FIG. 6 is a cross-sectional view of another chip package according to a second embodiment of the present invention, which is assembled to a printed circuit board. [Illustration of Graphical Symbols] 1 0 0: Chip package 1 1 0: Chip 1 1 2: Active surface 1 1 4: Solder pad 1 1 6: Conductive contact

12013twf.ptd 第22頁 200531186 圖式簡單說明 120 硬 質 蓋 體 130 黏 著 層 140 印 刷 電 路 板 142 接 合 墊 200 晶 片 封 裝 體 2 10 晶 片 2 12 主 動 表 面 2 14 鮮 墊 2 16 導 電 接 點 220 硬 質 蓋 體 230 黏 著 層 240 印 刷 電 路 板 242 接 合 墊 3 0 0 a :第一晶片封裝體 3 0 0 b :第二晶片封裝體 3 0 1 :晶片封裝體 3 0 2 ·晶圓 3 1 0 :晶片 3 1 0 a :第一晶片區域 3 1 0 b :第二晶片區域 3 1 2 :主動表面 3 1 4 :銲墊 3 1 4 a :第一銲墊 314b :第二銲墊12013twf.ptd Page 22 200531186 Brief description of the drawing 120 Hard cover 130 Adhesive layer 140 Printed circuit board 142 Bonding pad 200 Chip package 2 10 Chip 2 12 Active surface 2 14 Fresh pad 2 16 Conductive contact 220 Hard cover 230 Adhesive layer 240 Printed circuit board 242 Bonding pad 3 0 a: First chip package 3 0 0 b: Second chip package 3 0 1: Chip package 3 0 2 · Wafer 3 1 0: Chip 3 1 0 a: first wafer area 3 1 0 b: second wafer area 3 1 2: active surface 3 1 4: pad 3 1 4 a: first pad 314b: second pad

12013twf.ptd 第23頁 200531186 圖式簡單說明12013twf.ptd Page 23 200531186 Schematic description

316: 背面 318 : 貫孔 318a :凹陷表面 3 2 0 : 硬質 蓋體 3 2 0 a :第- -硬質 蓋 體 3 2 0 b :第二硬質 蓋 體 3 2 0 c :連接桿 3 2 2 : 連接 線路 3 2 2 a :第- -連接 線 路 3 2 2b 參够 - • 乐一 二連接 線 路 3 2 4 : 接合 墊 3 2 4a ••第- -接合 墊 32 4b • 够 - • 乐一 •-接合 墊 3 3 0 : 黏著 層 34 0 ·· 印刷 電路板 34 2 ·· 接合 墊 3 5 0 : 導電 接點 12013twf.ptd 第24頁316: back surface 318: through hole 318a: recessed surface 3 2 0: hard cover body 3 2 0 a: first--hard cover body 3 2 0 b: second hard cover body 3 2 0 c: connecting rod 3 2 2: Connection line 3 2 2 a: No.--Connection line 3 2 2b See also-• Le one two connection line 3 2 4: Bonding pad 3 2 4a •• No.--Bonding pad 32 4b • Enough-• Fun one •- Bonding pad 3 3 0: Adhesive layer 34 0 ·· Printed circuit board 34 2 ·· Bonding pad 3 5 0: Conductive contact 12013twf.ptd Page 24

Claims (1)

200531186 六、申請專利範圍 1 . 一種晶片封裝體,至少包括: 一晶片,具有一主動表面及多數個銲墊,其中該些銲 墊係配置於該主動表面;以及 一硬質蓋體,配置於該晶片之該主動表面,但暴露出 該些銲墊於該主動表面之上方。 2 .如申請專利範圍第1項所述之晶片封裝體,其中該 晶片更具有一重佈線層,其配置於該主動表面上,並形成 該些銲墊。 3. 如申請專利範圍第1項所述之晶片封裝體,其中該 硬質蓋體係以黏貼的方式,配置於該晶片之該主動表面。 4. 如申請專利範圍第1項所述之晶片封裝體,其中該 硬質蓋體之外圍係以黏貼的方式,配置於該晶片之該主動 表面。 5 .如申請專利範圍第1項所述之晶片封裝體,其中該 硬質蓋體之材質包括導電材質、絕緣材質及透明材質其中 ―― 〇 6.如申請專利範圍第1項所述之晶片封裝體,更包括 多數個導電接點,其分別配置於該些銲墊上,且該些導電 接點之相對於該主動表面的高度係大於該硬質蓋體之相對 於該主動表面的高度。 7 ·如申請專利範圍第1項所述之晶片封裝體,其中該 些銲墊係配置於該主動表面之外圍。 8 ·如申請專利範圍第7項所述之晶片封裝體,其中該 晶片之該主動表面的輪廓係為矩形,而該些銲墊係配置於200531186 VI. Scope of patent application 1. A chip package including at least: a chip having an active surface and a plurality of pads, wherein the pads are disposed on the active surface; and a hard cover is disposed on the The active surface of the chip, but the pads are exposed above the active surface. 2. The chip package according to item 1 of the patent application scope, wherein the chip further has a redistribution layer disposed on the active surface and forming the solder pads. 3. The chip package according to item 1 of the scope of patent application, wherein the hard cover system is disposed on the active surface of the chip in an adhesive manner. 4. The chip package according to item 1 of the scope of the patent application, wherein the periphery of the hard cover is arranged on the active surface of the chip in an adhesive manner. 5. The chip package as described in item 1 of the scope of patent application, wherein the material of the hard cover body includes conductive materials, insulating materials and transparent materials. Among them-〇6. The chip package as described in item 1 of the scope of patent application The body further includes a plurality of conductive contacts, which are respectively disposed on the pads, and the height of the conductive contacts relative to the active surface is greater than the height of the hard cover relative to the active surface. 7 · The chip package as described in item 1 of the patent application scope, wherein the pads are arranged on the periphery of the active surface. 8 · The chip package according to item 7 of the scope of the patent application, wherein the active surface of the chip is rectangular in outline, and the pads are disposed in the 12013twf.ptd 第25頁 200531186 六、申請專利範圍 該主動表面之外圍的至少一側。 9 .如申請專利範圍第7項所述之晶片封裝體,其中該 晶片更具有相對於該主動表面之一背面及多數個連接線 路,而該些連接線路之一端係分別連接至該些銲墊,且該 些連接線路更分別經由該晶片之側緣表面,而延伸至該晶 片之該背面,並分別形成一接合墊於該晶片之該背面。 1 0 .如申請專利範圍第9項所述之晶片封裝體,其中該 些接合墊係配置於該晶片之該背面的外圍。 1 1 .如申請專利範圍第9項所述之晶片封裝體,其中該 些接合墊係以面陣列的方式,配置於該晶片之該背面。 1 2.如申請專利範圍第9項所述之晶片封裝體,其中該 晶片之該側緣更包括一凹陷表面,其相對凹陷於該晶片之 該側緣,而局部之該連接線路係配置於該凹陷表面上。 1 3.如申請專利範圍第9項所述之晶片封裝體,更包括 多數個導電接點,其分別配置於該些接合墊上。 1 4.如申請專利範圍第1項所述之晶片封裝體,其中該 些銲墊係以面陣列的方式,配置於該晶片之該主動表面, 且該硬質蓋體更具有多數個開口 ,其分別暴露出對應之該 些銲堡*。 1 5 . —種晶片封裝製程,至少包括: 提供一晶圓,其中該晶圓具有一主動表面及對應之一 背面,且該晶圓具有一第一晶片區域及相鄰之一第二晶片 區域,而該晶圓更具有多數個第一銲墊及多數個第二銲 墊,其分別配置於該第一晶片區域之該主動表面及該第二12013twf.ptd Page 25 200531186 6. Scope of Patent Application At least one side of the periphery of the active surface. 9. The chip package according to item 7 of the scope of patent application, wherein the chip further has a back surface opposite to the active surface and a plurality of connection lines, and one end of the connection lines is respectively connected to the pads. Moreover, the connection lines respectively extend to the back surface of the wafer through the side edge surfaces of the wafer, and form a bonding pad on the back surface of the wafer, respectively. 10. The chip package according to item 9 of the scope of patent application, wherein the bonding pads are arranged on the periphery of the back surface of the chip. 1 1. The chip package according to item 9 of the scope of patent application, wherein the bonding pads are arranged on the back surface of the chip in a surface array manner. 1 2. The chip package according to item 9 of the scope of the patent application, wherein the side edge of the chip further includes a recessed surface, which is relatively recessed at the side edge of the chip, and the connection line is partially disposed at The recessed surface. 1 3. The chip package according to item 9 of the scope of patent application, further comprising a plurality of conductive contacts, which are respectively arranged on the bonding pads. 14. The chip package according to item 1 of the scope of the patent application, wherein the pads are arranged on the active surface of the chip in a surface array manner, and the hard cover has a plurality of openings. Corresponding to these corresponding welding castles *. 1 5. A wafer packaging process at least includes: providing a wafer, wherein the wafer has an active surface and a corresponding back surface, and the wafer has a first wafer region and an adjacent second wafer region The wafer further has a plurality of first pads and a plurality of second pads, which are respectively disposed on the active surface and the second pad of the first wafer region. 12013twf.ptd 第26頁 200531186 六、申請專利範圍 晶片區域之該主動表面; 形成多數個貫孔於該晶圓上,而該些貫孔係貫穿該晶 圓,並連接該主動表面及該背面,且依序排列於該第一晶 片區域及該第二晶片區域的交界處; 形成多數個第一連接線路及多數個第二連接線路於該 晶圓上,其中該些第一連接線路之一端係分別穿過該些貫 孔,而分別電性連接於該些第一銲墊,且該些第一連接線 路之另一端更延伸至該第一晶片區域之該背面,並分別形 成一第一接合墊於該第一晶片區域之該背面,並且該些第 二連接線路之一端亦分別穿過該些貫孔,而分別電性連接 於該些第二銲墊,且該些第二連接線路之另一端更延伸至 該第二晶片區域之該背面,並分別形成一第二接合墊於該 第二晶片區域之該背面,而且局部位於該些貫孔之内的該 些第一連接線路係相連於局部位於該些貫孔之内的第二連 接線路; 將一第一硬質蓋體及一第二硬質蓋體分別配置於該第 一晶片區域之該主動表面及該第二晶片區域之該主動表 面; 沿著該晶圓之該第一晶片區域及該第二晶片區域之交 界處來切割該晶圓,且同時切割局部位於該些貫孔之内的 該些第一連接線路及相連之局部位於該些貫孔之内的該些 第二連接線路;以及 將該晶圓之該第一晶片區域及該第二晶片區域以切割 的方式個別獨立於該晶圓之其他部分,使得該晶圓之該第12013twf.ptd Page 26 200531186 VI. The active surface of the patent application wafer area; forming a plurality of through holes on the wafer, and the through holes penetrate the wafer and connect the active surface and the back surface, And sequentially arranged at the junction of the first chip region and the second chip region; forming a plurality of first connection lines and a plurality of second connection lines on the wafer, wherein one end of the first connection lines is Passed through the through holes, respectively, and are electrically connected to the first solder pads, and the other ends of the first connection lines extend to the back surface of the first chip region, and respectively form a first bond. Pads on the back surface of the first chip region, and one ends of the second connection lines also pass through the through holes, respectively, and are electrically connected to the second pads, and the second connection lines The other end further extends to the back surface of the second wafer region, and a second bonding pad is formed on the back surface of the second wafer region, respectively, and the first connection lines partially located within the through holes are connected. A second connection line partially located within the through holes; a first hard cover and a second hard cover are respectively disposed on the active surface of the first chip region and the active surface of the second chip region ; Cutting the wafer along the junction of the first wafer region and the second wafer region of the wafer, and simultaneously cutting the first connection lines and the connected parts located inside the through holes at the same time; The second connection lines within the through-holes; and the first wafer region and the second wafer region of the wafer are individually separated from other parts of the wafer in a cutting manner, so that the该 第 The first 12013twf.ptd 第27頁 200531186 六、申請專利範圍 一晶片區域及該第一硬質蓋體成為一第一晶片封裝體,並 且使得該晶圓之該第二晶片區域及該第二硬質蓋體成為一 第二晶片封裝體。 1 6 .如申請專利範圍第1 5項所述之晶片封裝製程,其 中在將該晶圓之該第一晶片區域及該第二晶片區域以切割 的方式分別獨立於該晶圓之其他部分之前,更包括形成多 數個導電接點於該些第一接合墊及該些第二接合墊。 1 7.如申請專利範圍第1 5項所述之晶片封裝製程,其 中該第一硬質蓋體係以黏貼的方式,配置於該第一晶片區 域之該主動表面。 1 8.如申請專利範圍第1 5項所述之晶片封裝製程,其 中該第一硬質蓋體之外圍係以黏貼的方式,配置於該第一 晶片區域之該主動表面。 1 9.如申請專利範圍第1 5項所述之晶片封裝製程,其 中該第一硬質蓋體之材質包括導電材質、絕緣材質及透明 材質其中之一。 2 0 .如申請專利範圍第1 5項所述之晶片封裝製程,其 中該些第一接合墊係配置於該第一晶片區域之該背面的外 圍。 2 1 .如申請專利範圍第1 5項所述之晶片封裝製程,其 中該些第一接合墊係以面陣列的方式,配置於該第一晶片 區域之該背面。 2 2 .如申請專利範圍第1 5項所述之晶片封裝製程,其 中將局部之該些第一連接線路分別形成於該些貫孔之内的12013twf.ptd Page 27 200531186 VI. Patent application scope A wafer area and the first hard cover body become a first chip package, and the second wafer area of the wafer and the second hard cover body become one The second chip package. 16. The wafer packaging process according to item 15 of the scope of patent application, wherein before the first wafer region and the second wafer region of the wafer are separated from the other parts of the wafer by cutting, respectively Furthermore, it includes forming a plurality of conductive contacts on the first bonding pads and the second bonding pads. 1 7. The chip packaging process according to item 15 of the scope of the patent application, wherein the first hard cover system is disposed on the active surface of the first chip region in an adhesive manner. 1 8. The chip packaging process according to item 15 of the scope of patent application, wherein the periphery of the first hard cover is arranged on the active surface of the first chip region in an adhesive manner. 19 9. The chip packaging process according to item 15 of the scope of patent application, wherein the material of the first hard cover includes one of a conductive material, an insulating material, and a transparent material. 20. The chip packaging process according to item 15 of the scope of the patent application, wherein the first bonding pads are disposed on the outer periphery of the back surface of the first chip region. 2 1. The chip packaging process according to item 15 of the scope of patent application, wherein the first bonding pads are arranged on the back surface of the first chip region in a surface array manner. 2 2. The chip packaging process as described in item 15 of the scope of patent application, in which the first connection lines are partially formed in the through holes. 12013twf.ptd 第28頁 200531186 六、申請專利範圍 方法包括電鍍。 2 3 .如申請專利範圍第1 5項所述之晶片封裝製程,其 中在配置該第一硬質蓋體及該第二硬質蓋體時,該第一硬 質蓋體及該第二硬質蓋體係相互結構性連接,且在切割該 晶圓時,更包括切割該第一硬質蓋體及該第二硬質蓋體之 相連部分,用以分離該第一硬質蓋體及該第二硬質蓋體。12013twf.ptd Page 28 200531186 6. Scope of Patent Application The method includes electroplating. 2 3. The chip packaging process according to item 15 of the scope of patent application, wherein when the first hard cover and the second hard cover are configured, the first hard cover and the second hard cover system are mutually It is structurally connected, and when cutting the wafer, it further includes cutting the connecting portion of the first hard cover and the second hard cover to separate the first hard cover and the second hard cover. 12013twf.ptd 第29頁12013twf.ptd Page 29
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