TW200521218A - Thermal interface material and methode for making same - Google Patents
Thermal interface material and methode for making same Download PDFInfo
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- TW200521218A TW200521218A TW092136527A TW92136527A TW200521218A TW 200521218 A TW200521218 A TW 200521218A TW 092136527 A TW092136527 A TW 092136527A TW 92136527 A TW92136527 A TW 92136527A TW 200521218 A TW200521218 A TW 200521218A
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- 239000000463 material Substances 0.000 title claims abstract description 81
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052709 silver Inorganic materials 0.000 claims abstract description 42
- 239000004332 silver Substances 0.000 claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 32
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 29
- 239000011159 matrix material Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000084 colloidal system Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052582 BN Inorganic materials 0.000 claims abstract description 4
- 229910021392 nanocarbon Inorganic materials 0.000 claims description 20
- 239000003292 glue Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000003491 array Methods 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
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- 230000010354 integration Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- 238000004945 emulsification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
- F28F13/185—Heat-exchange surfaces provided with microstructures or with porous coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Description
200521218 五、發明說明（1) 【發明所屬之技術領域】 本發明係關於一種熱介面材料及其製造方法，尤指_ 種利用奈米碳管導熱之熱介面材料及其製造方法。 【先前技術】 近年來’隨著半導體器件集成工藝之快速發展，半導 肢為件之集成化程度越來越高，惟，器件體積卻變得越來 越小’其對散熱之需求越來越高，已成為一個越來越重要 土 Η喊。為滿足δ亥需要，風扇散熱、水冷輔助散熱及熱管 散熱等各種散熱方式被廣泛運用，並取得一定之散熱效 j ’但因散熱器與半導體集成器件之接觸介面之不平整， 般相，互接觸面積不到2%，未有一個理想之接觸介面，從 =本上影響半導體器件向散熱器傳遞熱量之效果，故，於 j器與半導體器件之間增加一具較高熱傳遞係數之介面 材料以增加介面之接觸程度實為必要。 統熱介 形成複 或其他 質。其 為液態 為載體 陷係整 來越不 增加銀 互接觸 係將導熱係 ，如石墨、 。此種材料 脂、相變材 源表面浸潤 材料接觸熱 導熱係數較 半導體集成 之導熱顆粒 整個複合材 合材料 金屬等 中以油 能與熱 之複合 個材質 能適應 膠基體 以增加 I體以 在呂、銀 體之性 使用時 和橡膠 晋遍缺 已緩越 求’而 k ^:相 數較高之顆粒分散於銀膠 氮化硼、氧化矽、氧化 之導熱性能取決於銀膠基 料為基體之複合材料因其 故接觸熱阻較小，而石夕膠 阻相對較大。該類材料一 小，典型值為lW/mK，這 化程度之提高對散熱之需 含量使得顆粒與顆粒之間 料之導熱係數，如某些特
200521218 五、發明說明（2) --- 殊之介面材料因此可達到4 -8 W/mK，惟，銀膠基體之導熱 顆粒含量增加至一定程度時，會使銀膠基體头本 ’… 八丈席本之性 能，如油脂會變硬，從而浸潤效果變差，橡膠亦會變得較 硬，從而失去應有之柔韋刃性，這都將使熱介面材二2二二 大降低。
近來有一種熱介面材料，係將定向排列之導熱係數約 為1100 W/mK之碳纖維一端或整體用聚合物固定，從而於 熱介面材料之垂直方向形成定向排列之碳纖維陣列，以使 每一碳纖維均可形成一導熱通道，該方式可有效提高熱介 面材料之導熱係數，達到50-90 W/mK。惟，該類材料1個 缺點係厚度必須於4 0微米以上，而整個熱介面材料之導熱 係數與薄膜之厚度成反比，故當其熱阻降低至一定程度， 進一步降低之空間相當有限。 為改善熱介面材料之性能，提高其熱傳導係數，各種 材料被廣泛試驗。Savas Berber等人2 0 0 0年於美國物理 學會上發表一篇名為’’Unusually High Thermal
Conductivity of Carbon Nanotubes” 之文章指出，”ζπ 形 (1〇, 10)奈米碳管於室溫下導熱係數可達6 6 0 0 w/mK ，具
體内谷可參閱文獻 Phys. Rev. Lett(2000)，Vol· 84 Ρ 4613 。 ·，· 美國專利第6, 407, 922號揭示一種利用奈米碳管導熱 之熱介面材料，其係將奈米碳管摻到銀膠基體結成一體， 通過注模方式製得熱介面材料，且該熱介面材料之兩導熱 表面之面積不等，其中與散熱器接觸一面之面積大於與熱
第7頁 200521218 五、發明說明（3) 源接觸一面之面積，這樣可有利於散熱器散熱，但該方法 製得之熱介面材料有不足之處，其一，注模方式製得熱介 面材料厚度較大，導致該熱介面材料之導熱係數較高，且 增加該熱介面材料之體積，與器件向小型化方向發展之趨 勢不相適應，且熱介面材料缺乏柔韌性；其二，奈米碳管 於基體材料中未有序排列，其於基體分佈之均勻性較難確 保，因而熱傳導之均勻性亦受到影響，且奈米碳管縱向導 熱之優勢未充分利用，影響熱介面材料之熱傳導係數。 有鑒於此，提供一種具優良之熱傳導效果、厚度薄、 柔韌性佳且熱傳導均勻之熱介面材料實為必要。 【内容】 為解決先前技術之問題，本發明之目的在於提供一種 導熱效果優良、厚度薄、柔韌性佳之熱介面材料。 本發明之另一目的係提供此種熱介面材料之製作方 法。 為實現本發明之目的，本發明提供一種熱介面材料， 其包括：一銀谬基體，該銀膠基體包括一第一表面及一相 對於第一表面之第二表面；及複數奈米碳管，該複數奈米 碳管分佈於該銀膠基體中；其中該銀膠材料包括奈米銀顆 粒、奈米氮化硼顆粒及合成油，該複數奈米碳管相互平行 且於該銀膠基體沿第一表面向第二表面延伸。 為實現本發明之另一目的，本發明熱介面材料之製造 方法包括以下步驟： 提供一奈米碳管陣列，該奈米碳管陣列置於一基底
200521218
用銀膠塗覆浸潤奈 冷卻固化，形成熱 與先前之熱介面材 因奈米碳管陣列具均句 每一根奈米碳管均可於 道，得到導熱係數較高 【實施方式】 米碳管陣列 "面材料。 料相比，本 夂向排列之 $直熱介面 之熱介面材 發明提供之 優點，該熱 材料方向形 料。 熱介面材料 介面材料之 成熱傳導通 請一併參閱第一圖與 第 沈積-催化劑層1 2，其方法^ :，係於—基底11均勾
濺射法完成。基底11之材料可用玻璃、石英 J今積或 銘。本實施例採用多切，其表面係—多孔>2乳化 極小，一般小於3奈米。催化劑層12之材料可曰匕之直徑 鎳及其合金’本實施方式選用鐵作為催化劑材料鐵鈷、 虱化催化劑層12，形成催化劑顆粒（圖未示）， 分佈有催化劑之基底U置於反應爐中（圖未示）於？〇〇寻
\〇〇〇攝氏度下，通入碳源氣，生長出奈米碳管陣列，其中 碳源氣可為乙块、乙烯等氣體，奈米碳管陣列2 2之高度在 一定範圍内可通過控制其生長時間來控制，一般生長高度 為1〜1 0 0微米，本實施例之奈米碳管陣列2 2之生長高度為 1 0 0微米。有關奈米碳管陣列2 2之生長方法已較為成熟， 具體可參閱文獻Science, 1999,283,512-414及文獻 J·Am·Chem.Soc，20 0 1， 1 23, 1 1 50 2 - 1 1 5 0 3，此外美國專利 第6, 35 0, 488號亦公開一種大面積生長奈米碳管陣列之方
第9頁 200521218 五、發明說明（5) 法。 凊蒼閱第二圖、第四圖，用銀膠“塗覆浸潤生長完備 之定向棑列奈米碳管陣列22，待銀膠32完全浸潤奈米碳管 陣列22。該銀膠32材料包括奈米銀顆粒、奈米氮化硼顆粒 及合成油（PolysyntheUc 0US)，其中，該奈米銀顆粒粒 徑為1〜9 0奈米’純度為9 9. 9 %，奈米氮化硼顆粒粒徑為工〜 3 0奈米。銀膠3 2之完全浸潤之時間同奈米碳管陣列2 2之高 度、密度以及整個奈米碳管陣列22之面積及銀膠32自身之 枯度有關。 將經銀膠3 2浸潤之奈米碳管陣列2 2冷卻固化，再將該 含奈米，碳管陣列22之銀膠32從基底11進行脫膜，形成熱介 面材料40，其厚度為100微米，與原先奈米碳管陣列22高 度一致。即熱介面材料40之厚度取決於所生長之奈米碳管 陣列2 2之高度，故，可通過控制奈米碳管陣列2 2之生長高 度製得所需不同厚度之熱介面材料40。 再請參閱第五圖，本發明之熱介面材料4 〇，奈米碳管 陣列2 2經銀膠3 2固結形成一體，奈米碳管陣列2 2於銀膠3 2 垂、均勻分佈，形成複數熱傳遞通道，所形成之熱介面材 料40具導熱係數較高，且導熱均勻之特點。 本發明製得之熱介面材料4 0，奈米碳管陣列2 2於熱介 面材料4 0之形態基本未變’即奈米碳管陣列2 2之奈米碳管 之間距未變，且奈米石炭管陣列未聚集成束，保持初始定向 排列之狀態。 本發明採用之銀膠3 2可為奈米銀顆粒、奈米氮化硼顆
第10頁 200521218
粒及合成油混合而成，其導熱係數較高，揮發性較 中，添加奈米氮化硼顆粒可有效改善埶傳導之稃味其 於銀膠32充分浸潤奈米碳管陣列22，直度 ς ’有利.π π ，、1又、贵來低於 請一併參閱 面材料4 0具有極 器（CPU)、功率 晶片在内之電子 與散熱器6 0之間 良介面熱接觸， 之表面.（未標示） 40之第二表面44 發明製得奈米碳 米級，故具較佳 不齊情勢之下， 80與散熱器60之 第六圖 佳導熱 電晶體 器件8 0 ，能提 熱介面 接觸， 與散熱 管陣列 之柔韋刃 係數， 、視頻 中，教 供電子 材料4 0 與第一 器60之 之熱介 性，即 本發明之熱介 間一良好熱接 明製得奈米碳管陣列 可廣泛應用於包括中 圖形陣列晶片（VGA) 介面材料40置於電子 器件80與散熱器60之 之第一表面42與電子 表面4 2相對應之熱介 底面（未標不）接觸。 面材料40極薄，其厚 便於電子器件8〇之表 面材料40亦能提供電 觸0 之熱介 央處理 、射頻 器件8 0 間一優 器件8 0 面材料 由於本 度僅微 面參差 子器件 綜上所述，本發明符合發明專利之要件，爰依法提出 專利申請。惟，以上所述者僅為本發明之較佳實施例，舉 凡熟悉本案技藝之人士，在援依本案發明精神所作之等二 修飾或變化，皆應包含於以下之申請專利範圍内。
200521218 圖式簡單說明 【圖式簡單說明】 第一圖係本發明含有催化劑薄膜之基底示意圖。 第二圖係於第一圖所示基底生長定向排列之奈米碳管 陣列示意圖。 第三圖係本發明銀膠塗覆浸潤奈米碳管陣列之示意 圖。 第四圖係本發明固化之奈米碳管陣列於基體被揭起之 過程示意圖。 第五圖係本發明含奈米碳管陣列之熱介面材料示意
圖。 第.六圖係本發明熱介面材料之應用示意圖。 【主要元件符號說明】 基底 11 催化劑層 12 奈米碳管陣列 22 銀膠 32 熱介面材料 40 第一表面 42 第二表面 44 散熱器 60 電子器件 80
第12頁
Claims (1)
- 200521218 六、申請專利範圍 1. 一熱介面材料，其包括： 一銀膠基體，該銀膠基體包括一第一表面及一相對 於第一表面之第二表面；及 複數奈米碳管，該複數奈米碳管分佈於該銀膠基體 中；其中 該銀膠材料包括奈米銀顆粒、奈米氮化硼顆粒及合 成油，該複數奈米碳管相互平行且於該銀膠基體沿第 一表面向第二表面延伸。 2. 如申請專利範圍第1項所述之熱介面材料，其中該奈米 銀顆粒粒徑為卜9 0奈米，純度為9 9 . 9%，奈米氮化硼顆 粒粒徑為1〜3 0奈米。 3. 如申請專利範圍第1項所述之熱介面材料，其中該熱介 面材料之第一表面與熱源相接觸，該第二表面與散熱 器相接觸。 4. 如申請專利範圍第1項所述之熱介面材料，其中該熱介 面材料厚度為1〜1 0 0微米。 5. 如申請專利範圍第1項所述之熱介面材料，其中該第一 表面與該第二表面相互平行。 6. 如申請專利範圍第1項所述之熱介面材料，其中該複數第13頁 200521218 六、申請專利範圍 奈米碳管垂直於熱介面材料之第一及第二表面。 7. —種熱介面材料之製造方法，其包括以下步驟： 提供一奈米碳管陣列，該奈米碳管陣列置於一基底； 用銀膠塗覆浸潤奈米碳管陣列； 固化浸潤奈米碳管陣列後之銀膠，形成熱介面材料。 8. 如申請專利範圍第7項所述之一種熱介面材料製造方 法，其中該奈米碳管陣列之形成方法包括化學氣相沈 積法。 9. 如申請專利範圍第7項所述之一種熱介面材料製造方 法，其中該銀膠材料包括奈米銀顆粒、奈米氮化硼顆 粒及合成油。 1 0.如申請專利範圍第7項所述之一種熱介面材料製造方 法，其中該奈米銀顆粒之純度為9 9. 9%，粒徑為卜9 0奈 米。 1 1.如申請專利範圍第7項所述之一種熱介面材料製造方 法，其中該奈米氮化硼顆粒粒徑為1〜3 0奈米。 1 2.如申請專利範圍第7項所述之一種熱介面材料製造方 法，其中該銀膠粘度低於1 OOmps。第14頁 200521218第15頁
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