TW200517047A - Active shielding for a circuit comprising magnetically sensitive materials - Google Patents
Active shielding for a circuit comprising magnetically sensitive materialsInfo
- Publication number
- TW200517047A TW200517047A TW093126085A TW93126085A TW200517047A TW 200517047 A TW200517047 A TW 200517047A TW 093126085 A TW093126085 A TW 093126085A TW 93126085 A TW93126085 A TW 93126085A TW 200517047 A TW200517047 A TW 200517047A
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- sensitive materials
- magnetically sensitive
- shielding
- active shielding
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/025—Compensating stray fields
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1695—Protection circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Hard Magnetic Materials (AREA)
- Semiconductor Memories (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Soft Magnetic Materials (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49955603P | 2003-09-02 | 2003-09-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200517047A true TW200517047A (en) | 2005-05-16 |
Family
ID=34272840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093126085A TW200517047A (en) | 2003-09-02 | 2004-08-30 | Active shielding for a circuit comprising magnetically sensitive materials |
Country Status (9)
Country | Link |
---|---|
US (2) | US7474547B2 (zh) |
EP (1) | EP1665279B1 (zh) |
JP (1) | JP2007504455A (zh) |
KR (1) | KR20060125695A (zh) |
CN (1) | CN100541653C (zh) |
AT (1) | ATE421145T1 (zh) |
DE (1) | DE602004019115D1 (zh) |
TW (1) | TW200517047A (zh) |
WO (1) | WO2005022546A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1886804B (zh) * | 2003-11-24 | 2010-05-26 | Nxp股份有限公司 | 用于磁存储器的数据保持指示器 |
DE102006032277B4 (de) * | 2006-07-12 | 2017-06-01 | Infineon Technologies Ag | Magnetfeldsensorbauelement |
US8294577B2 (en) * | 2007-03-09 | 2012-10-23 | Nve Corporation | Stressed magnetoresistive tamper detection devices |
CN101453868B (zh) * | 2007-12-04 | 2011-06-22 | 北京卫星环境工程研究所 | 磁环境模拟试验设备的外干扰控制系统及控制方法 |
US8382000B2 (en) * | 2007-12-24 | 2013-02-26 | Dynamics Inc. | Payment cards and devices with enhanced magnetic emulators |
US20090273044A1 (en) * | 2008-05-05 | 2009-11-05 | Rainer Leuschner | Semiconductor Device, Memory Module, and Method of Manufacturing a Semiconductor Device |
US9121883B2 (en) * | 2011-10-14 | 2015-09-01 | Landis+Gyr, Inc. | Magnetic tampering detection and correction in a utility meter |
KR20140021781A (ko) | 2012-08-10 | 2014-02-20 | 삼성전자주식회사 | 가변 저항 메모리를 포함하는 반도체 메모리 장치 |
DE102013204952B3 (de) | 2013-03-20 | 2014-05-15 | Bruker Biospin Ag | Aktiv abgeschirmtes zylinderförmiges Gradientenspulensystem mit passiver HF-Abschirmung für NMR-Apparate |
CN103701961B (zh) * | 2013-12-26 | 2016-07-13 | 惠州Tcl移动通信有限公司 | 一种防止移动终端保护套翻折关屏的结构及方法 |
US9506950B2 (en) | 2014-03-17 | 2016-11-29 | Landis+Gyr, Inc. | Tampering detection for an electric meter |
US20170059669A1 (en) * | 2015-08-26 | 2017-03-02 | Qualcomm Incorporated | Magnetic field enhancing backing plate for mram wafer testing |
DE102016105380A1 (de) | 2016-03-22 | 2017-09-28 | Infineon Technologies Ag | Elektrischer Schirm zwischen magnetoresistiven Sensorelementen |
JP6569632B2 (ja) * | 2016-09-29 | 2019-09-04 | トヨタ自動車株式会社 | ハイブリッド車両の制御装置 |
US10921390B2 (en) * | 2019-05-31 | 2021-02-16 | Nxp Usa, Inc. | Magnetic attack detection in a magnetic random access memory (MRAM) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08153310A (ja) * | 1994-11-28 | 1996-06-11 | Sony Corp | 磁気抵抗効果型薄膜磁気ヘッド |
SE506698C2 (sv) * | 1995-06-27 | 1998-02-02 | Volvo Ab | Anordning och förfarande för reducering av magnetiska växelfält |
US6690553B2 (en) * | 1996-08-26 | 2004-02-10 | Kabushiki Kaisha Toshiba | Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus |
JPH10340430A (ja) * | 1997-06-10 | 1998-12-22 | Fujitsu Ltd | スピンバルブ磁気抵抗効果型ヘッドおよび磁気記憶装置 |
US6872993B1 (en) * | 1999-05-25 | 2005-03-29 | Micron Technology, Inc. | Thin film memory device having local and external magnetic shielding |
CN1280831C (zh) * | 2000-06-23 | 2006-10-18 | 皇家菲利浦电子有限公司 | 磁存储器 |
DE10032278C1 (de) * | 2000-07-03 | 2001-11-29 | Infineon Technologies Ag | Verfahren zur Verhinderung von Elektromigration in einem MRAM |
DE10053965A1 (de) * | 2000-10-31 | 2002-06-20 | Infineon Technologies Ag | Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung |
US6724674B2 (en) * | 2000-11-08 | 2004-04-20 | International Business Machines Corporation | Memory storage device with heating element |
US6724582B2 (en) * | 2001-01-19 | 2004-04-20 | Kabushiki Kaisha Toshiba | Current perpendicular to plane type magnetoresistive device, magnetic head, and magnetic recording/reproducing apparatus |
US6717403B2 (en) * | 2001-09-06 | 2004-04-06 | Honeywell International Inc. | Method and system for improving the efficiency of the set and offset straps on a magnetic sensor |
EP1514126A1 (en) * | 2002-06-06 | 2005-03-16 | Koninklijke Philips Electronics N.V. | Sensor and method for measuring a current of charged particles |
-
2004
- 2004-08-20 AT AT04769833T patent/ATE421145T1/de not_active IP Right Cessation
- 2004-08-20 KR KR1020067004212A patent/KR20060125695A/ko not_active Application Discontinuation
- 2004-08-20 CN CNB2004800250730A patent/CN100541653C/zh not_active Expired - Fee Related
- 2004-08-20 EP EP04769833A patent/EP1665279B1/en active Active
- 2004-08-20 WO PCT/IB2004/051509 patent/WO2005022546A1/en active Application Filing
- 2004-08-20 DE DE602004019115T patent/DE602004019115D1/de active Active
- 2004-08-20 JP JP2006525232A patent/JP2007504455A/ja active Pending
- 2004-08-20 US US10/570,174 patent/US7474547B2/en active Active
- 2004-08-30 TW TW093126085A patent/TW200517047A/zh unknown
-
2008
- 2008-11-25 US US12/277,537 patent/US7791920B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
ATE421145T1 (de) | 2009-01-15 |
KR20060125695A (ko) | 2006-12-06 |
EP1665279B1 (en) | 2009-01-14 |
US7791920B2 (en) | 2010-09-07 |
US20060262585A1 (en) | 2006-11-23 |
JP2007504455A (ja) | 2007-03-01 |
CN1846276A (zh) | 2006-10-11 |
WO2005022546A1 (en) | 2005-03-10 |
CN100541653C (zh) | 2009-09-16 |
EP1665279A1 (en) | 2006-06-07 |
US20090073738A1 (en) | 2009-03-19 |
DE602004019115D1 (de) | 2009-03-05 |
US7474547B2 (en) | 2009-01-06 |
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