TW200516347A - Radiation-sensitive resin composition, interlayer insulating film and microlens - Google Patents
Radiation-sensitive resin composition, interlayer insulating film and microlensInfo
- Publication number
- TW200516347A TW200516347A TW093132623A TW93132623A TW200516347A TW 200516347 A TW200516347 A TW 200516347A TW 093132623 A TW093132623 A TW 093132623A TW 93132623 A TW93132623 A TW 93132623A TW 200516347 A TW200516347 A TW 200516347A
- Authority
- TW
- Taiwan
- Prior art keywords
- radiation
- insulating film
- interlayer insulating
- microlens
- forming
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title abstract 5
- 239000011229 interlayer Substances 0.000 title abstract 4
- 239000011342 resin composition Substances 0.000 title abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- OQUIHNRSFOIOFU-UHFFFAOYSA-N 1-methoxy-2-(2-methoxypropoxy)propane Chemical compound COCC(C)OCC(C)OC OQUIHNRSFOIOFU-UHFFFAOYSA-N 0.000 abstract 1
- DOVZUKKPYKRVIK-UHFFFAOYSA-N 1-methoxypropan-2-yl propanoate Chemical compound CCC(=O)OC(C)COC DOVZUKKPYKRVIK-UHFFFAOYSA-N 0.000 abstract 1
- PPVOIMLJDPLOND-UHFFFAOYSA-N 2-propoxypropyl acetate Chemical compound CCCOC(C)COC(C)=O PPVOIMLJDPLOND-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003367211A JP4363161B2 (ja) | 2003-10-28 | 2003-10-28 | 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200516347A true TW200516347A (en) | 2005-05-16 |
| TWI338190B TWI338190B (enExample) | 2011-03-01 |
Family
ID=34645279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093132623A TW200516347A (en) | 2003-10-28 | 2004-10-27 | Radiation-sensitive resin composition, interlayer insulating film and microlens |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4363161B2 (enExample) |
| KR (1) | KR101057883B1 (enExample) |
| TW (1) | TW200516347A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050113351A (ko) * | 2004-05-27 | 2005-12-02 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 |
| CN1904736B (zh) * | 2005-07-25 | 2012-06-13 | 日产化学工业株式会社 | 正型感光性树脂组合物和由其得到的固化膜 |
| JP4696761B2 (ja) * | 2005-08-02 | 2011-06-08 | 住友化学株式会社 | 感放射線性樹脂組成物 |
| JP2008105999A (ja) | 2006-10-25 | 2008-05-08 | Idemitsu Kosan Co Ltd | アダマンタン誘導体、その製造方法、樹脂組成物およびその硬化物 |
| US8168371B2 (en) | 2007-01-22 | 2012-05-01 | Nissan Chemical Industries, Ltd. | Positive photosensitive resin composition |
| JP4905700B2 (ja) * | 2007-05-16 | 2012-03-28 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズならびにそれらの形成方法 |
| KR102069746B1 (ko) * | 2012-11-30 | 2020-01-23 | 롬엔드하스전자재료코리아유한회사 | 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막 |
| US20140240645A1 (en) * | 2013-02-27 | 2014-08-28 | Samsung Display Co., Ltd. | Photosensitive resin composition, display device using the same and method of manufacturing the display device |
| JP6218393B2 (ja) * | 2013-02-28 | 2017-10-25 | 東京応化工業株式会社 | 層間絶縁膜用感光性樹脂組成物 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5919597A (en) * | 1997-10-30 | 1999-07-06 | Ibm Corporation Of Armonk | Methods for preparing photoresist compositions |
| JP4524944B2 (ja) * | 2001-03-28 | 2010-08-18 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物、その層間絶縁膜およびマイクロレンズの形成への使用、ならびに層間絶縁膜およびマイクロレンズ |
| JP3838626B2 (ja) * | 2001-09-07 | 2006-10-25 | 東京応化工業株式会社 | 感光性樹脂組成物及びそれを用いたパターンの形成方法 |
-
2003
- 2003-10-28 JP JP2003367211A patent/JP4363161B2/ja not_active Expired - Lifetime
-
2004
- 2004-10-27 TW TW093132623A patent/TW200516347A/zh not_active IP Right Cessation
- 2004-10-27 KR KR1020040086075A patent/KR101057883B1/ko not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005134440A (ja) | 2005-05-26 |
| TWI338190B (enExample) | 2011-03-01 |
| KR20050040747A (ko) | 2005-05-03 |
| KR101057883B1 (ko) | 2011-08-19 |
| JP4363161B2 (ja) | 2009-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |