TW200515501A - Method of improving low-k film property and damascene process using the same - Google Patents

Method of improving low-k film property and damascene process using the same

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Publication number
TW200515501A
TW200515501A TW093113446A TW93113446A TW200515501A TW 200515501 A TW200515501 A TW 200515501A TW 093113446 A TW093113446 A TW 093113446A TW 93113446 A TW93113446 A TW 93113446A TW 200515501 A TW200515501 A TW 200515501A
Authority
TW
Taiwan
Prior art keywords
low
film property
same
damascene process
improving low
Prior art date
Application number
TW093113446A
Other languages
English (en)
Other versions
TWI295485B (en
Inventor
Hui-Lin Chang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
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Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200515501A publication Critical patent/TW200515501A/zh
Application granted granted Critical
Publication of TWI295485B publication Critical patent/TWI295485B/zh

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    • H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
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    • G02B6/35—Optical coupling means having switching means
    • G02B6/3564—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details
    • G02B6/3584—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details constructional details of an associated actuator having a MEMS construction, i.e. constructed using semiconductor technology such as etching
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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TW093113446A 2003-10-29 2004-05-13 Method of improving low-k film property and damascene process using the same TWI295485B (en)

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