TW200511615A - Radiation-emitting semiconductor component - Google Patents

Radiation-emitting semiconductor component

Info

Publication number
TW200511615A
TW200511615A TW093125700A TW93125700A TW200511615A TW 200511615 A TW200511615 A TW 200511615A TW 093125700 A TW093125700 A TW 093125700A TW 93125700 A TW93125700 A TW 93125700A TW 200511615 A TW200511615 A TW 200511615A
Authority
TW
Taiwan
Prior art keywords
semiconductor
radiation
main face
semiconductor component
emitting semiconductor
Prior art date
Application number
TW093125700A
Other languages
English (en)
Other versions
TWI290774B (en
Inventor
Ralph Wirth
Wilhelm Stein
Ines Pietzonka
Reiner Windisch
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34276531&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW200511615(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from DE10346605.3A external-priority patent/DE10346605B4/de
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200511615A publication Critical patent/TW200511615A/zh
Application granted granted Critical
Publication of TWI290774B publication Critical patent/TWI290774B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW093125700A 2003-08-29 2004-08-27 Radiation-emitting semiconductor component TWI290774B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10339983 2003-08-29
DE10346605.3A DE10346605B4 (de) 2003-08-29 2003-10-07 Strahlungemittierendes Halbleiterbauelement

Publications (2)

Publication Number Publication Date
TW200511615A true TW200511615A (en) 2005-03-16
TWI290774B TWI290774B (en) 2007-12-01

Family

ID=34276531

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093125700A TWI290774B (en) 2003-08-29 2004-08-27 Radiation-emitting semiconductor component

Country Status (6)

Country Link
US (1) US7692204B2 (zh)
EP (1) EP1658643B1 (zh)
JP (1) JP2007504639A (zh)
KR (2) KR20080005314A (zh)
TW (1) TWI290774B (zh)
WO (1) WO2005024961A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
DE102005046190A1 (de) * 2005-09-27 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit Stromaufweitungsschicht
DE102006034847A1 (de) * 2006-04-27 2007-10-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
GB0610468D0 (en) * 2006-05-26 2006-07-05 Rolls Royce Plc A method of manufacturing a component
DE102007004302A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
KR100869962B1 (ko) * 2006-12-07 2008-11-24 한국전자통신연구원 전류 확산층을 포함하는 발광소자의 제조방법
DE102007020291A1 (de) * 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung einer Kontaktstruktur für einen derartigen Chip
DE102007032555A1 (de) 2007-07-12 2009-01-15 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US8642369B2 (en) * 2009-03-03 2014-02-04 Zn Technology, Inc. Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same
JP5360587B2 (ja) * 2009-12-04 2013-12-04 独立行政法人科学技術振興機構 ｎ型半導体薄膜、ホモｐｎ接合素子及び薄膜太陽電池並びにｎ型半導体薄膜及びホモｐｎ接合素子の製造方法
KR101735670B1 (ko) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 발광 소자
US10158043B2 (en) 2014-05-30 2018-12-18 Mikro Mesa Technolgy Co., Ltd. Light-emitting diode and method for manufacturing the same
WO2018035322A1 (en) * 2016-08-17 2018-02-22 The Regents Of The University Of California Contact architectures for tunnel junction devices
US20190237644A1 (en) * 2018-01-30 2019-08-01 Mikro Mesa Technology Co., Ltd. Light emitting device with multi-layer isolation structure

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5115286A (en) * 1988-08-26 1992-05-19 Hewlett-Packard Company Electro-optical device with inverted transparent substrate and method for making same
US5397920A (en) * 1994-03-24 1995-03-14 Minnesota Mining And Manufacturing Company Light transmissive, electrically-conductive, oxide film and methods of production
US5861636A (en) * 1995-04-11 1999-01-19 Nec Corporation Surface emitting visible light emiting diode having ring-shaped electrode
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
TW365071B (en) * 1996-09-09 1999-07-21 Toshiba Corp Semiconductor light emitting diode and method for manufacturing the same
US6040201A (en) * 1996-09-17 2000-03-21 Citizen Watch Co., Ltd. Method of manufacturing thin film diode
US6072148A (en) * 1996-12-10 2000-06-06 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Device for producing connections between two respective contact elements by means of laser energy
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
DE19820777C2 (de) 1997-05-08 2003-06-18 Showa Denko Kk Elektrode für lichtemittierende Halbleitervorrichtungen
US6268618B1 (en) * 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
JP4285837B2 (ja) 1999-06-14 2009-06-24 昭和電工株式会社 窓層を備えたＡｌＧａＩｎＰ発光素子
MY133357A (en) * 1999-06-30 2007-11-30 Hitachi Ltd A semiconductor device and a method of manufacturing the same
US6614056B1 (en) 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
WO2001041225A2 (en) * 1999-12-03 2001-06-07 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
DE10020464A1 (de) 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US6420732B1 (en) * 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
AU2001273466A1 (en) * 2000-07-13 2002-01-30 Rutgers, The State University Of New Jersey Integrated tunable surface acoustic wave technology and sensors provided thereby
JP2002170989A (ja) * 2000-12-04 2002-06-14 Sharp Corp 窒化物系化合物半導体発光素子
TW488088B (en) * 2001-01-19 2002-05-21 South Epitaxy Corp Light emitting diode structure
JP3814151B2 (ja) * 2001-01-31 2006-08-23 信越半導体株式会社 発光素子
US20020131462A1 (en) * 2001-03-15 2002-09-19 Chao-Kun Lin Intracavity contacted long wavelength VCSELs with buried antimony layers
US6555405B2 (en) * 2001-03-22 2003-04-29 Uni Light Technology, Inc. Method for forming a semiconductor device having a metal substrate
US6649942B2 (en) * 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
US7075954B2 (en) * 2001-05-29 2006-07-11 Nl Nanosemiconductor Gmbh Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors
TW493287B (en) * 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
TW564584B (en) 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
TW541710B (en) * 2001-06-27 2003-07-11 Epistar Corp LED having transparent substrate and the manufacturing method thereof
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
JP2003218374A (ja) * 2002-01-23 2003-07-31 Sharp Corp Ｉｉｉ−ｖ族太陽電池
TW546852B (en) * 2002-04-15 2003-08-11 Epistar Corp Mixed-light type LED and the manufacturing method thereof
US6967981B2 (en) * 2002-05-30 2005-11-22 Xerox Corporation Nitride based semiconductor structures with highly reflective mirrors
US7112825B2 (en) * 2002-07-11 2006-09-26 Rohm Co., Ltd. Semiconductor light emitting device
US6911716B2 (en) * 2002-09-09 2005-06-28 Lucent Technologies, Inc. Bipolar transistors with vertical structures
US6822991B2 (en) 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
TW561637B (en) * 2002-10-16 2003-11-11 Epistar Corp LED having contact layer with dual dopant state
US6901096B2 (en) * 2002-12-20 2005-05-31 Finisar Corporation Material system for Bragg reflectors in long wavelength VCSELs
US6903381B2 (en) * 2003-04-24 2005-06-07 Opto Tech Corporation Light-emitting diode with cavity containing a filler
DE102004004781A1 (de) * 2004-01-30 2005-08-18 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
TWI288486B (en) * 2004-03-17 2007-10-11 Epistar Corp Light-emitting diode and method for manufacturing the same
DE102006057747B4 (de) * 2006-09-27 2015-10-15 Osram Opto Semiconductors Gmbh Halbleiterkörper und Halbleiterchip mit einem Halbleiterkörper

Also Published As

Publication number Publication date
EP1658643B1 (de) 2018-11-14
TWI290774B (en) 2007-12-01
KR20080005314A (ko) 2008-01-10
KR100853882B1 (ko) 2008-08-22
WO2005024961A1 (de) 2005-03-17
KR20060063951A (ko) 2006-06-12
EP1658643A1 (de) 2006-05-24
JP2007504639A (ja) 2007-03-01
US20070181894A1 (en) 2007-08-09
US7692204B2 (en) 2010-04-06

Similar Documents

Publication Publication Date Title
TW200511615A (en) Radiation-emitting semiconductor component
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
TW200703724A (en) Luminescence diode chip with a contact structure
TW200620657A (en) Recessed semiconductor device
TWI265642B (en) Surface-mountable miniature-luminescence-and/or photo-diode and its production method
TW200625679A (en) Group Ⅲ nitride based quantum well light emitting device structures with an indium containing capping structure
TW200737553A (en) Optoelectronic semiconductor chip
EP1389814A3 (en) Semiconductor light-emitting device
EP2224466A3 (en) High power AllnGaN based multi-chip light emitting diode
EP1403935A3 (en) Light emitting devices including tunnel junctions
MY125261A (en) Light emitting device
AU2003241280A1 (en) Method of fabricating vertical structure leds
TWI266435B (en) Nitride-based compound semiconductor light emitting device and fabricating method thereof
WO2003038874A8 (en) Diode having vertical structure and method of manufacturing the same
MY137396A (en) Group iii nitride based light emitting diode structures with a quantum well and superlattice, group iii nitride based quantum well structures and group iii nitride based superlattice structures
TW200518267A (en) Integrated circuit chip
MY143405A (en) N-type nitride semiconductor laminate and semiconductor device using same
WO2009006870A3 (de) Strahlungsemittierender halbleiterkörper
TW200605412A (en) Luminous diodes arrangement
TW200509422A (en) Light-emitting device and manufacturing method thereof
TW200503291A (en) Light emitting devices with compact active regions
TW200506028A (en) White light-emitting device structures
EP1345265A3 (en) Electronics assembly with improved heatsink configuration
EP1530242A3 (en) Semiconductor light emitting device
TW200520604A (en) Organic electroluminescent device