TW200511456A - Method for implanting ions into semiconductor substrate - Google Patents
Method for implanting ions into semiconductor substrateInfo
- Publication number
- TW200511456A TW200511456A TW093124265A TW93124265A TW200511456A TW 200511456 A TW200511456 A TW 200511456A TW 093124265 A TW093124265 A TW 093124265A TW 93124265 A TW93124265 A TW 93124265A TW 200511456 A TW200511456 A TW 200511456A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor substrate
- implanting ions
- side wall
- ion implantation
- ions
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Hall/Mr Elements (AREA)
- Non-Volatile Memory (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003207346A JP2005064033A (ja) | 2003-08-12 | 2003-08-12 | 半導体基板へのイオン注入方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200511456A true TW200511456A (en) | 2005-03-16 |
| TWI242252B TWI242252B (en) | 2005-10-21 |
Family
ID=33562586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093124265A TWI242252B (en) | 2003-08-12 | 2004-08-12 | Method for implanting ions into semiconductor substrate |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7060598B2 (zh) |
| EP (1) | EP1507287A3 (zh) |
| JP (1) | JP2005064033A (zh) |
| KR (1) | KR100628348B1 (zh) |
| TW (1) | TWI242252B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8124508B2 (en) * | 2010-03-31 | 2012-02-28 | Advanced Ion Beam Technology, Inc. | Method for low temperature ion implantation |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE792589A (fr) * | 1971-10-06 | 1973-03-30 | Ibm | Procede d'obtention de structures semiconductrices par implantation d'ions |
| US4276477A (en) * | 1979-09-17 | 1981-06-30 | Varian Associates, Inc. | Focusing apparatus for uniform application of charged particle beam |
| JPS58164134A (ja) * | 1982-03-24 | 1983-09-29 | Hitachi Ltd | 半導体装置の製造方法 |
| US4661712A (en) * | 1985-05-28 | 1987-04-28 | Varian Associates, Inc. | Apparatus for scanning a high current ion beam with a constant angle of incidence |
| US4861729A (en) * | 1987-08-24 | 1989-08-29 | Matsushita Electric Industrial Co., Ltd. | Method of doping impurities into sidewall of trench by use of plasma source |
| JPH02278723A (ja) * | 1989-04-19 | 1990-11-15 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JPH0834194B2 (ja) * | 1989-06-30 | 1996-03-29 | 松下電器産業株式会社 | イオン注入方法及び本方法を用いた半導体装置の製造方法 |
| US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| JPH03187272A (ja) * | 1989-12-15 | 1991-08-15 | Mitsubishi Electric Corp | Ｍｏｓ型電界効果トランジスタ及びその製造方法 |
| JP2775503B2 (ja) * | 1990-03-13 | 1998-07-16 | 三菱電機株式会社 | 接合ゲート型電界効果トランジスタの製造方法 |
| JP2799090B2 (ja) * | 1991-09-09 | 1998-09-17 | シャープ株式会社 | イオン注入装置 |
| JPH05114508A (ja) | 1991-10-23 | 1993-05-07 | Ricoh Co Ltd | 新規な磁性材料及びその製造法 |
| US5711812A (en) * | 1995-06-06 | 1998-01-27 | Varian Associates, Inc. | Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes |
| KR970052183A (ko) * | 1995-12-30 | 1997-07-29 | 김주용 | 이온 빔 각도 조정이 가능한 이온 주입기 |
| US6100172A (en) * | 1998-10-29 | 2000-08-08 | International Business Machines Corporation | Method for forming a horizontal surface spacer and devices formed thereby |
| JP2000183154A (ja) | 1998-12-18 | 2000-06-30 | Sony Corp | 溝型素子分離領域の形成方法 |
| US6437350B1 (en) * | 2000-08-28 | 2002-08-20 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for adjusting beam parallelism in ion implanters |
| US7033514B2 (en) * | 2001-08-27 | 2006-04-25 | Micron Technology, Inc. | Method and apparatus for micromachining using a magnetic field and plasma etching |
-
2003
- 2003-08-12 JP JP2003207346A patent/JP2005064033A/ja active Pending
-
2004
- 2004-08-02 KR KR1020040060760A patent/KR100628348B1/ko active IP Right Grant
- 2004-08-12 TW TW093124265A patent/TWI242252B/zh active
- 2004-08-12 US US10/918,515 patent/US7060598B2/en active Active
- 2004-08-12 EP EP04254851A patent/EP1507287A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US7060598B2 (en) | 2006-06-13 |
| TWI242252B (en) | 2005-10-21 |
| EP1507287A3 (en) | 2008-07-09 |
| KR100628348B1 (ko) | 2006-09-27 |
| US20050037600A1 (en) | 2005-02-17 |
| KR20050018607A (ko) | 2005-02-23 |
| JP2005064033A (ja) | 2005-03-10 |
| EP1507287A2 (en) | 2005-02-16 |
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