TW200509308A - Semiconductor memory device and manufacturing method thereof - Google Patents

Semiconductor memory device and manufacturing method thereof

Info

Publication number
TW200509308A
TW200509308A TW093122273A TW93122273A TW200509308A TW 200509308 A TW200509308 A TW 200509308A TW 093122273 A TW093122273 A TW 093122273A TW 93122273 A TW93122273 A TW 93122273A TW 200509308 A TW200509308 A TW 200509308A
Authority
TW
Taiwan
Prior art keywords
film
main surface
memory device
semiconductor memory
oxide films
Prior art date
Application number
TW093122273A
Other languages
English (en)
Other versions
TWI239598B (en
Inventor
Naoki Tsuji
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200509308A publication Critical patent/TW200509308A/zh
Application granted granted Critical
Publication of TWI239598B publication Critical patent/TWI239598B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW093122273A 2003-08-07 2004-07-26 Semiconductor memory device and manufacturing method thereof TWI239598B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003288849A JP2005057187A (ja) 2003-08-07 2003-08-07 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW200509308A true TW200509308A (en) 2005-03-01
TWI239598B TWI239598B (en) 2005-09-11

Family

ID=34114056

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093122273A TWI239598B (en) 2003-08-07 2004-07-26 Semiconductor memory device and manufacturing method thereof

Country Status (4)

Country Link
US (1) US7038304B2 (zh)
JP (1) JP2005057187A (zh)
KR (1) KR100573332B1 (zh)
TW (1) TWI239598B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7368350B2 (en) * 2005-12-20 2008-05-06 Infineon Technologies Ag Memory cell arrays and methods for producing memory cell arrays
US20070212833A1 (en) * 2006-03-13 2007-09-13 Macronix International Co., Ltd. Methods for making a nonvolatile memory device comprising a shunt silicon layer
KR20100104684A (ko) * 2009-03-18 2010-09-29 삼성전자주식회사 반도체 장치의 게이트 구조물 및 그의 형성방법
TW201725704A (zh) * 2016-01-05 2017-07-16 聯華電子股份有限公司 非揮發性記憶體元件及其製作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1012750A (ja) 1996-06-24 1998-01-16 Hitachi Ltd 不揮発性半導体記憶装置の製造方法
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
JP3389112B2 (ja) 1998-09-09 2003-03-24 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
TW486733B (en) * 1999-12-28 2002-05-11 Toshiba Corp Dry etching method and manufacturing method of semiconductor device for realizing high selective etching
JP2001351993A (ja) 2000-06-05 2001-12-21 Nec Corp 半導体記憶装置及びその製造方法
WO2002015277A2 (en) * 2000-08-14 2002-02-21 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same
JP2002359308A (ja) * 2001-06-01 2002-12-13 Toshiba Corp 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
JP2005057187A (ja) 2005-03-03
TWI239598B (en) 2005-09-11
KR20050016123A (ko) 2005-02-21
US20050032310A1 (en) 2005-02-10
US7038304B2 (en) 2006-05-02
KR100573332B1 (ko) 2006-04-24

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees