TW200506510A - Device manufacturing method - Google Patents

Device manufacturing method

Info

Publication number
TW200506510A
TW200506510A TW093109513A TW93109513A TW200506510A TW 200506510 A TW200506510 A TW 200506510A TW 093109513 A TW093109513 A TW 093109513A TW 93109513 A TW93109513 A TW 93109513A TW 200506510 A TW200506510 A TW 200506510A
Authority
TW
Taiwan
Prior art keywords
bar
device manufacturing
rectangular
equivalent
shaped
Prior art date
Application number
TW093109513A
Other languages
English (en)
Other versions
TWI270748B (en
Inventor
Steven George Hansen
Donis George Flagello
Michel Fransois Hubert Klaassen
Winter Laurentius Cornelius De
Edwin Wilhelmus Marie Knols
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW200506510A publication Critical patent/TW200506510A/zh
Application granted granted Critical
Publication of TWI270748B publication Critical patent/TWI270748B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Liquid Crystal (AREA)
  • Microscoopes, Condenser (AREA)
TW093109513A 2003-04-07 2004-04-06 Device manufacturing method TWI270748B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03252182A EP1467253A1 (en) 2003-04-07 2003-04-07 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
TW200506510A true TW200506510A (en) 2005-02-16
TWI270748B TWI270748B (en) 2007-01-11

Family

ID=32865071

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093109513A TWI270748B (en) 2003-04-07 2004-04-06 Device manufacturing method

Country Status (7)

Country Link
US (2) US20050007573A1 (zh)
EP (1) EP1467253A1 (zh)
JP (1) JP4090449B2 (zh)
KR (1) KR100598643B1 (zh)
CN (1) CN1570770A (zh)
SG (1) SG115658A1 (zh)
TW (1) TWI270748B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100676576B1 (ko) * 2003-10-28 2007-01-30 주식회사 하이닉스반도체 수동 편광 여과기 및 이의 제조 방법
JP4565916B2 (ja) * 2004-07-23 2010-10-20 三洋電機株式会社 光反応装置
US7619747B2 (en) * 2004-12-17 2009-11-17 Asml Netherlands B.V. Lithographic apparatus, analyzer plate, subassembly, method of measuring a parameter of a projection system and patterning device
JP2006179516A (ja) * 2004-12-20 2006-07-06 Toshiba Corp 露光装置、露光方法及び半導体装置の製造方法
US7517642B2 (en) * 2004-12-30 2009-04-14 Intel Corporation Plane waves to control critical dimension
DE102005003905B4 (de) * 2005-01-27 2007-04-12 Infineon Technologies Ag Anordnung zur Projektion eines Musters in eine Bildebene
JP2006269853A (ja) * 2005-03-25 2006-10-05 Sony Corp 露光装置および露光方法
KR100699111B1 (ko) * 2005-06-09 2007-03-22 동부일렉트로닉스 주식회사 노광용 빛 투과율 설정장치
US20100118288A1 (en) * 2005-06-13 2010-05-13 Marcus Adrianus Van De Kerkhof Lithographic projection system and projection lens polarization sensor
US7525642B2 (en) * 2006-02-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7817250B2 (en) * 2007-07-18 2010-10-19 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
DE102007025649B4 (de) * 2007-07-21 2011-03-03 X-Fab Semiconductor Foundries Ag Verfahren zum Übertragen einer Epitaxie-Schicht von einer Spender- auf eine Systemscheibe der Mikrosystemtechnik
DE102007055063A1 (de) * 2007-11-16 2009-05-28 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
FR2955218B1 (fr) 2010-01-08 2012-02-10 St Microelectronics Sa Procede et dispositif de controle de la frequence d'un signal d'horloge d'un circuit integre
US8609302B2 (en) 2011-08-22 2013-12-17 Micron Technology, Inc. Lithography methods, methods for forming patterning tools and patterning tools
WO2013143594A1 (en) 2012-03-29 2013-10-03 Carl Zeiss Smt Gmbh Apparatus and method for compensating a defect of a channel of a microlithographic projection exposure system
KR102632562B1 (ko) * 2018-08-22 2024-02-02 삼성전자주식회사 Si 기반 검사 장치와 검사 방법, 및 그 검사 방법을 포함한 반도체 소자 제조방법

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465220A (en) * 1992-06-02 1995-11-07 Fujitsu Limited Optical exposure method
US4568148A (en) * 1983-11-03 1986-02-04 Onanian Richard A Hand-held collapsible microscope system
JP3048168B2 (ja) * 1990-07-19 2000-06-05 キヤノン株式会社 表面状態検査装置及びこれを備える露光装置
US5473410A (en) * 1990-11-28 1995-12-05 Nikon Corporation Projection exposure apparatus
US5264898A (en) * 1991-08-29 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Projection exposure apparatus
JP3235078B2 (ja) * 1993-02-24 2001-12-04 株式会社ニコン 走査露光方法、露光制御装置、走査型露光装置、及びデバイス製造方法
US5534970A (en) * 1993-06-11 1996-07-09 Nikon Corporation Scanning exposure apparatus
KR100296778B1 (ko) * 1993-06-11 2001-10-24 오노 시게오 노광장치및그장치를사용하는소자제조방법
US5729331A (en) * 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
KR0153796B1 (ko) * 1993-09-24 1998-11-16 사토 후미오 노광장치 및 노광방법
US5442184A (en) * 1993-12-10 1995-08-15 Texas Instruments Incorporated System and method for semiconductor processing using polarized radiant energy
KR0173168B1 (ko) * 1994-02-24 1999-03-20 가네꼬 히사시 웨이퍼상의 레지스트막을 노광하기 위한 노광계와 그에 사용되는 조명계 및 방법
US5706091A (en) * 1995-04-28 1998-01-06 Nikon Corporation Apparatus for detecting a mark pattern on a substrate
JP3600869B2 (ja) * 1995-02-10 2004-12-15 株式会社ニコン 投影光学系及び該光学系を備えた投影露光装置
US5854490A (en) * 1995-10-03 1998-12-29 Fujitsu Limited Charged-particle-beam exposure device and charged-particle-beam exposure method
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
US5830612A (en) * 1996-01-24 1998-11-03 Fujitsu Limited Method of detecting a deficiency in a charged-particle-beam exposure mask
JP3728613B2 (ja) * 1996-12-06 2005-12-21 株式会社ニコン 走査型露光装置の調整方法及び該方法を使用する走査型露光装置
US6930754B1 (en) * 1998-06-30 2005-08-16 Canon Kabushiki Kaisha Multiple exposure method
DE19829612A1 (de) * 1998-07-02 2000-01-05 Zeiss Carl Fa Beleuchtungssystem der Mikrolithographie mit Depolarisator
US6466304B1 (en) * 1998-10-22 2002-10-15 Asm Lithography B.V. Illumination device for projection system and method for fabricating
US6556361B1 (en) * 1999-03-17 2003-04-29 Rochester Institute Of Technology Projection imaging system with a non-circular aperture and a method thereof
US6268908B1 (en) * 1999-08-30 2001-07-31 International Business Machines Corporation Micro adjustable illumination aperture
US6361909B1 (en) * 1999-12-06 2002-03-26 Industrial Technology Research Institute Illumination aperture filter design using superposition
JP2001267239A (ja) * 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2001264696A (ja) * 2000-03-16 2001-09-26 Canon Inc 照明光学系及びそれを備えた露光装置
US6750968B2 (en) * 2000-10-03 2004-06-15 Accent Optical Technologies, Inc. Differential numerical aperture methods and device
JP3673731B2 (ja) * 2001-05-22 2005-07-20 キヤノン株式会社 露光装置及び方法
TW554411B (en) * 2001-08-23 2003-09-21 Nikon Corp Exposure apparatus
FR2836238B1 (fr) * 2002-02-19 2004-04-02 Kis Procede pour transferer une image numerique en vue de sa restitution visuelle, et dispositif pour la mise en oeuvre de ce procede
TWI265550B (en) * 2002-05-14 2006-11-01 Toshiba Corp Fabrication method, manufacturing method for semiconductor device, and fabrication device
US20040248043A1 (en) * 2003-06-03 2004-12-09 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method

Also Published As

Publication number Publication date
KR20040087928A (ko) 2004-10-15
US20080030708A1 (en) 2008-02-07
TWI270748B (en) 2007-01-11
US20050007573A1 (en) 2005-01-13
CN1570770A (zh) 2005-01-26
EP1467253A1 (en) 2004-10-13
JP2004343079A (ja) 2004-12-02
KR100598643B1 (ko) 2006-07-07
JP4090449B2 (ja) 2008-05-28
SG115658A1 (en) 2005-10-28

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees