TW200506088A - Device and method for producing single crystals by vapour deposition - Google Patents
Device and method for producing single crystals by vapour depositionInfo
- Publication number
- TW200506088A TW200506088A TW093111283A TW93111283A TW200506088A TW 200506088 A TW200506088 A TW 200506088A TW 093111283 A TW093111283 A TW 093111283A TW 93111283 A TW93111283 A TW 93111283A TW 200506088 A TW200506088 A TW 200506088A
- Authority
- TW
- Taiwan
- Prior art keywords
- crystal
- single crystal
- vapour deposition
- single crystals
- producing single
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 5
- 230000008021 deposition Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0301225A SE0301225L (sv) | 2003-04-24 | 2003-04-24 | Apparat och metod för tillverkning av monokristaller genom gasdeposition |
| US46580003P | 2003-04-28 | 2003-04-28 | |
| EP04008697A EP1471168B2 (en) | 2003-04-24 | 2004-04-13 | Device and method for producing single crystals by vapour deposition |
| IT000245A ITTO20040245A1 (it) | 2003-04-24 | 2004-04-20 | Dispositivo e metodo di produzione di cristalli singoli per deposizione da fase vapore |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200506088A true TW200506088A (en) | 2005-02-16 |
| TWI259214B TWI259214B (en) | 2006-08-01 |
Family
ID=37873335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93111283A TWI259214B (en) | 2003-04-24 | 2004-04-22 | Device and method for producing single crystals by vapour deposition |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI259214B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI571430B (zh) * | 2015-12-07 | 2017-02-21 | 國家中山科學研究院 | 一種光子晶體之製備方法 |
| CN113445122A (zh) * | 2020-03-24 | 2021-09-28 | 芯恩（青岛）集成电路有限公司 | 提高SiC晶体生长效率及质量的方法及装置 |
-
2004
- 2004-04-22 TW TW93111283A patent/TWI259214B/zh not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI571430B (zh) * | 2015-12-07 | 2017-02-21 | 國家中山科學研究院 | 一種光子晶體之製備方法 |
| CN113445122A (zh) * | 2020-03-24 | 2021-09-28 | 芯恩（青岛）集成电路有限公司 | 提高SiC晶体生长效率及质量的方法及装置 |
| CN113445122B (zh) * | 2020-03-24 | 2022-11-22 | 芯恩（青岛）集成电路有限公司 | 提高SiC晶体生长效率及质量的方法及装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI259214B (en) | 2006-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |