TW200505069A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- TW200505069A TW200505069A TW093118681A TW93118681A TW200505069A TW 200505069 A TW200505069 A TW 200505069A TW 093118681 A TW093118681 A TW 093118681A TW 93118681 A TW93118681 A TW 93118681A TW 200505069 A TW200505069 A TW 200505069A
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- layer
- field effect
- effect transistor
- cyano group
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000002131 composite material Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 125000004093 cyano group Chemical group *C#N 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003185593 | 2003-06-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200505069A true TW200505069A (en) | 2005-02-01 |
| TWI303497B TWI303497B (zh) | 2008-11-21 |
Family
ID=33549670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093118681A TW200505069A (en) | 2003-06-27 | 2004-06-25 | Field effect transistor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7361926B2 (zh) |
| JP (1) | JP4513745B2 (zh) |
| KR (1) | KR100726114B1 (zh) |
| TW (1) | TW200505069A (zh) |
| WO (1) | WO2005001940A1 (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101169079B1 (ko) * | 2005-05-13 | 2012-07-26 | 엘지디스플레이 주식회사 | 유기 박막 트랜지스터 및 그 제조 방법과, 이를 이용한디스플레이 장치 및 그 제조 방법 |
| US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
| GB2447509A (en) * | 2007-03-16 | 2008-09-17 | Seiko Epson Corp | Pattern for Inkjet TFT circuit development |
| US9911857B2 (en) * | 2010-10-29 | 2018-03-06 | Cbrite Inc. | Thin film transistor with low trap-density material abutting a metal oxide active layer and the gate dielectric |
| KR101892540B1 (ko) * | 2012-05-10 | 2018-08-28 | 삼성전자주식회사 | 바이오 물질의 알에프 특성 측정 방법 및 장치 |
| JP2015216072A (ja) * | 2014-05-13 | 2015-12-03 | 株式会社ジャパンディスプレイ | 有機ｅｌ装置及びその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
| JPH06180456A (ja) * | 1992-10-14 | 1994-06-28 | Sekisui Finechem Co Ltd | 液晶表示素子用スペーサ及びそれを用いた液晶表示素子 |
| JP3994441B2 (ja) * | 1995-01-09 | 2007-10-17 | 松下電器産業株式会社 | 電界効果トランジスタ |
| JP3789545B2 (ja) * | 1995-10-09 | 2006-06-28 | ソニー株式会社 | 絶縁膜の形成方法 |
| JP3963693B2 (ja) * | 2001-10-15 | 2007-08-22 | 富士通株式会社 | 導電性有機化合物及び電子素子 |
| WO2003052841A1 (en) * | 2001-12-19 | 2003-06-26 | Avecia Limited | Organic field effect transistor with an organic dielectric |
| JP2005072528A (ja) * | 2003-08-28 | 2005-03-17 | Shin Etsu Chem Co Ltd | 薄層電界効果トランジスター及びその製造方法 |
-
2004
- 2004-06-24 JP JP2005511035A patent/JP4513745B2/ja not_active Expired - Fee Related
- 2004-06-24 WO PCT/JP2004/008895 patent/WO2005001940A1/ja active IP Right Grant
- 2004-06-24 KR KR1020057019737A patent/KR100726114B1/ko not_active IP Right Cessation
- 2004-06-24 US US10/535,412 patent/US7361926B2/en not_active Expired - Fee Related
- 2004-06-25 TW TW093118681A patent/TW200505069A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20060043359A1 (en) | 2006-03-02 |
| JP4513745B2 (ja) | 2010-07-28 |
| KR100726114B1 (ko) | 2007-06-12 |
| TWI303497B (zh) | 2008-11-21 |
| JPWO2005001940A1 (ja) | 2006-08-10 |
| WO2005001940A1 (ja) | 2005-01-06 |
| US7361926B2 (en) | 2008-04-22 |
| KR20050121737A (ko) | 2005-12-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |