TW200504849A - Method for cleaning heat treatment apparatus - Google Patents

Method for cleaning heat treatment apparatus

Info

Publication number
TW200504849A
TW200504849A TW093111276A TW93111276A TW200504849A TW 200504849 A TW200504849 A TW 200504849A TW 093111276 A TW093111276 A TW 093111276A TW 93111276 A TW93111276 A TW 93111276A TW 200504849 A TW200504849 A TW 200504849A
Authority
TW
Taiwan
Prior art keywords
heat treatment
treatment apparatus
cleaning heat
cleaning
gas
Prior art date
Application number
TW093111276A
Other languages
English (en)
Chinese (zh)
Other versions
TWI306275B (https=
Inventor
Kazuhide Hasebe
Mitsuhiro Okada
Takashi Chiba
Jun Ogawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200504849A publication Critical patent/TW200504849A/zh
Application granted granted Critical
Publication of TWI306275B publication Critical patent/TWI306275B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW093111276A 2003-04-22 2004-04-22 Method for cleaning heat treatment apparatus TW200504849A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003117663 2003-04-22

Publications (2)

Publication Number Publication Date
TW200504849A true TW200504849A (en) 2005-02-01
TWI306275B TWI306275B (https=) 2009-02-11

Family

ID=33308045

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093111276A TW200504849A (en) 2003-04-22 2004-04-22 Method for cleaning heat treatment apparatus

Country Status (4)

Country Link
US (1) US20060216949A1 (https=)
KR (1) KR20060002807A (https=)
TW (1) TW200504849A (https=)
WO (1) WO2004095555A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040261923A1 (en) * 2003-06-25 2004-12-30 Burns Steven M. Clean atmosphere heat treat for coated turbine components
US20050161060A1 (en) * 2004-01-23 2005-07-28 Johnson Andrew D. Cleaning CVD chambers following deposition of porogen-containing materials
JP4939864B2 (ja) * 2006-07-25 2012-05-30 東京エレクトロン株式会社 ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP5520552B2 (ja) * 2009-09-11 2014-06-11 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP6101113B2 (ja) 2012-03-30 2017-03-22 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置並びにプログラム
KR102516778B1 (ko) 2018-02-08 2023-04-03 주성엔지니어링(주) 챔버 세정 장치 및 챔버 세정 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2589140B2 (ja) * 1988-05-13 1997-03-12 富士通株式会社 半導体製造装置の洗浄方法
US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JPH06333854A (ja) * 1993-05-21 1994-12-02 Nippon Steel Corp 成膜装置
JPH08195381A (ja) * 1995-01-17 1996-07-30 Fujitsu Ltd 半導体装置の製造方法
US5817534A (en) * 1995-12-04 1998-10-06 Applied Materials, Inc. RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
US5685951A (en) * 1996-02-15 1997-11-11 Micron Technology, Inc. Methods and etchants for etching oxides of silicon with low selectivity in a vapor phase system
US6114216A (en) * 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US20030010354A1 (en) * 2000-03-27 2003-01-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber

Also Published As

Publication number Publication date
KR20060002807A (ko) 2006-01-09
US20060216949A1 (en) 2006-09-28
WO2004095555A1 (ja) 2004-11-04
TWI306275B (https=) 2009-02-11

Similar Documents

Publication Publication Date Title
TW200501254A (en) Method for removing silicon oxide film and processing apparatus
WO2004066365A3 (en) Cleaning of cvd chambers using remote source with cxfyoz based chemistry
TW200629389A (en) Method for treating a substrate
WO2010123707A3 (en) Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
AU2003249028A1 (en) Thermal processing apparatus and method for evacuating a process chamber
WO2006034130A3 (en) Apparatus and process for surface treatment of substrate using an activated reactive gas
WO2010047953A3 (en) A remote plasma clean process with cycled high and low pressure clean steps
TW200501241A (en) Method for cleaning thin-film forming apparatus
TW200633051A (en) Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate
WO2002007788A8 (en) A sterilisation process and apparatus therefor
MX2009004105A (es) Proceso y aparato de esterilizacion por ozono.
TW200731353A (en) A deposition system and method
WO2009135685A3 (de) Vorrichtung und verfahren zum tempern von gegenständen in einer behandlungskammer
WO2007097822A3 (en) Enhancement of remote plasma source clean for dielectric films
WO2011056484A3 (en) Method and apparatus of halogen removal
ATE281000T1 (de) Verfahren und gerät zur stabilisierung eines plasmas
TW200632125A (en) Plasma processing apparatus
TW200614368A (en) Plasma processing device amd method
TW201130042A (en) Substrate processing method and substrate processing apparatus
TWI264763B (en) Load-lock technique
WO2009155446A3 (en) Ion source cleaning method and apparatus
WO2002012587A3 (en) Processing apparatus and cleaning method
WO2003021649A1 (en) Apparatus and method for producing semiconductor device, and method for cleaning semiconductor producing apparatus
TW200517524A (en) Processing apparatus and method
SG132675A1 (en) System, method and apparatus for self-cleaning dry etch

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees