TW200504784A - Ion source apparatus and cleaning optimized method thereof - Google Patents

Ion source apparatus and cleaning optimized method thereof

Info

Publication number
TW200504784A
TW200504784A TW093116181A TW93116181A TW200504784A TW 200504784 A TW200504784 A TW 200504784A TW 093116181 A TW093116181 A TW 093116181A TW 93116181 A TW93116181 A TW 93116181A TW 200504784 A TW200504784 A TW 200504784A
Authority
TW
Taiwan
Prior art keywords
rare gas
ion source
insulation layers
source apparatus
ion
Prior art date
Application number
TW093116181A
Other languages
English (en)
Other versions
TWI394196B (zh
Inventor
Hirohiko Murata
Masateru Sato
Original Assignee
Sumitomo Eaton Nova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Eaton Nova filed Critical Sumitomo Eaton Nova
Publication of TW200504784A publication Critical patent/TW200504784A/zh
Application granted granted Critical
Publication of TWI394196B publication Critical patent/TWI394196B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2209/00—Apparatus and processes for manufacture of discharge tubes
    • H01J2209/01—Generalised techniques
    • H01J2209/017—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
TW093116181A 2003-06-06 2004-06-04 離子源設備及其最佳清潔方法 TWI394196B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003162763A JP4374487B2 (ja) 2003-06-06 2003-06-06 イオン源装置およびそのクリーニング最適化方法

Publications (2)

Publication Number Publication Date
TW200504784A true TW200504784A (en) 2005-02-01
TWI394196B TWI394196B (zh) 2013-04-21

Family

ID=34054820

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093116181A TWI394196B (zh) 2003-06-06 2004-06-04 離子源設備及其最佳清潔方法

Country Status (4)

Country Link
US (1) US7947129B2 (zh)
JP (1) JP4374487B2 (zh)
KR (1) KR101065449B1 (zh)
TW (1) TWI394196B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102376513A (zh) * 2010-08-11 2012-03-14 日新离子机器株式会社 离子源电极的清洗方法
TWI638379B (zh) * 2013-05-03 2018-10-11 美商艾克塞利斯科技公司 離子植入系統和減少粒子污染的方法
CN111640639A (zh) * 2019-03-01 2020-09-08 日新离子机器株式会社 离子源及其清洁方法

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
EP1866074A4 (en) * 2005-03-16 2017-01-04 Entegris Inc. System for delivery of reagents from solid sources thereof
EP1881523B1 (en) * 2005-05-12 2013-01-02 Panasonic Corporation Plasma doping method and plasma doping apparatus
KR100683110B1 (ko) * 2005-06-13 2007-02-15 삼성전자주식회사 플라즈마 형성 방법 및 이를 이용한 막 형성 방법
KR101297917B1 (ko) 2005-08-30 2013-08-27 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 대안적인 불화 붕소 전구체를 이용한 붕소 이온 주입 방법,및 주입을 위한 대형 수소화붕소의 형성 방법
US20070137063A1 (en) * 2005-12-21 2007-06-21 Hitachi Global Storage Technologies Netherlands, B.V. Carbon beam deposition chamber for reduced defects
JP2010503977A (ja) * 2006-04-26 2010-02-04 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド 半導体処理システムの洗浄方法
GB0608528D0 (en) 2006-04-28 2006-06-07 Applied Materials Inc Front plate for an ion source
US20080142039A1 (en) * 2006-12-13 2008-06-19 Advanced Technology Materials, Inc. Removal of nitride deposits
US7964039B2 (en) * 2007-09-07 2011-06-21 Imec Cleaning of plasma chamber walls using noble gas cleaning step
CN101981661A (zh) * 2008-02-11 2011-02-23 高级技术材料公司 在半导体处理系统中离子源的清洗
CN104217981B (zh) * 2009-02-11 2018-01-09 恩特格里斯公司 半导体制造系统中的离子源清洁方法
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
JP5380263B2 (ja) * 2009-12-15 2014-01-08 キヤノンアネルバ株式会社 イオンビーム発生器
US8604418B2 (en) * 2010-04-06 2013-12-10 Axcelis Technologies, Inc. In-vacuum beam defining aperture cleaning for particle reduction
KR101307111B1 (ko) * 2010-08-24 2013-09-11 닛신 이온기기 가부시기가이샤 플라즈마 발생 장치
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US9064795B2 (en) * 2012-03-30 2015-06-23 Varian Semiconductor Equipment Associates, Inc. Technique for processing a substrate
US9530615B2 (en) * 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
US9062377B2 (en) * 2012-10-05 2015-06-23 Varian Semiconductor Equipment Associates, Inc. Reducing glitching in an ion implanter
US9209032B2 (en) * 2013-03-15 2015-12-08 Tokyo Electron Limited Electric pressure systems for control of plasma properties and uniformity
US9142392B2 (en) * 2013-04-29 2015-09-22 Varian Semiconductor Equipment Associates, Inc. Self-cleaning radio frequency plasma source
US9218935B2 (en) * 2013-07-08 2015-12-22 Carl Zeiss Microscopy, Llc Charged particle beam system and method of operating a charged particle beam system
US9711316B2 (en) * 2013-10-10 2017-07-18 Varian Semiconductor Equipment Associates, Inc. Method of cleaning an extraction electrode assembly using pulsed biasing
KR101648900B1 (ko) * 2014-09-06 2016-08-17 (주)화인솔루션 이온 소스 및 이를 갖는 증착 장치
US10192710B2 (en) 2015-05-25 2019-01-29 Hitachi High-Technologies Corporation Ion milling apparatus and ion milling method
US10522330B2 (en) 2015-06-12 2019-12-31 Varian Semiconductor Equipment Associates, Inc. In-situ plasma cleaning of process chamber components
JP6584927B2 (ja) 2015-11-13 2019-10-02 住友重機械イオンテクノロジー株式会社 イオン注入装置、およびイオン注入装置の制御方法
KR101798373B1 (ko) 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
US10410844B2 (en) * 2016-12-09 2019-09-10 Varian Semiconductor Equipment Associates, Inc. RF clean system for electrostatic elements
US20180247800A1 (en) * 2017-02-28 2018-08-30 International Business Machines Corporation Gallium implantation cleaning method
JP6898753B2 (ja) 2017-03-06 2021-07-07 住友重機械イオンテクノロジー株式会社 イオン生成装置
KR102477354B1 (ko) * 2018-03-29 2022-12-15 삼성전자주식회사 가스 분배 판을 갖는 플라즈마 처리 장치
CN111069188B (zh) * 2018-10-18 2021-09-14 汉辰科技股份有限公司 离子布植机内部的氟化表面的清理
US20230125435A1 (en) * 2021-10-27 2023-04-27 Applied Materials, Inc. Ion extraction assembly having variable electrode thickness for beam uniformity control

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217548A (ja) 1986-03-18 1987-09-25 Nec Corp イオン注入装置
US4851693A (en) * 1988-06-03 1989-07-25 Varian Associates, Inc. Compensated scan wave form generator for ion implantation equipment
JPH02148647A (ja) * 1988-11-30 1990-06-07 Nec Yamagata Ltd イオン注入装置のイオンソース洗浄治具及び洗浄方法
JPH03163735A (ja) * 1989-11-20 1991-07-15 Sony Corp イオン注入装置
JP2986974B2 (ja) 1991-09-20 1999-12-06 富士通株式会社 電子ビームテスタ
US5633506A (en) * 1995-07-17 1997-05-27 Eaton Corporation Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses
JPH10227701A (ja) 1997-02-18 1998-08-25 Toshiba Corp 温度監視装置
JP3247326B2 (ja) 1997-11-17 2002-01-15 株式会社タケダ製作所 マンホール装置のシール構造
US6221169B1 (en) * 1999-05-10 2001-04-24 Axcelis Technologies, Inc. System and method for cleaning contaminated surfaces in an ion implanter
JP2001229841A (ja) * 2000-02-21 2001-08-24 Hitachi Ltd 引出し電極のクリーニング方法及びイオンビーム処理装置
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102376513A (zh) * 2010-08-11 2012-03-14 日新离子机器株式会社 离子源电极的清洗方法
TWI638379B (zh) * 2013-05-03 2018-10-11 美商艾克塞利斯科技公司 離子植入系統和減少粒子污染的方法
CN111640639A (zh) * 2019-03-01 2020-09-08 日新离子机器株式会社 离子源及其清洁方法
CN111640639B (zh) * 2019-03-01 2024-03-22 日新离子机器株式会社 离子源及其清洁方法

Also Published As

Publication number Publication date
KR101065449B1 (ko) 2011-09-19
TWI394196B (zh) 2013-04-21
US20050016838A1 (en) 2005-01-27
JP2004363050A (ja) 2004-12-24
US7947129B2 (en) 2011-05-24
JP4374487B2 (ja) 2009-12-02
KR20040105606A (ko) 2004-12-16

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