TW200426920A - Film formation method, manufacturing method of electronic apparatus, film formation apparatus, electronic apparatus and electronic machine - Google Patents

Abstract

The subject of the present invention is to provide a film formation method, which is capable of using material efficiently to form high quality organic thin film, film formation apparatus, the electronic apparatus and electronic machine manufactured by using the same. The invented organic film formation apparatus 10 is provided with the followings: liquid supplying portion 11; gas supplying portion 12; soft ionization portion 13; ion sorting portion 14; deflection portion 15; and film formation portion 16. Fine liquid droplet of the organic material for forming the film is formed in the soft ionization portion 13, and is ionized or charged; after that, the liquid droplet is vaporized to generate gas-shape pseudo molecular ion. In addition, the organic material pseudo molecular ions are sorted from the pseudo ions in the ion sorting-portion 14. Furthermore, the adhered voltage is given to plural electrodes formed in the electronic device substrate formed with organic thin film by using the circuit formed in advance in the electronic device substrate such that the pseudo molecular ion of the organic material can selectively adhere to the regulated electrodes.

Description

200426920 (1) Description of the invention [Technical field to which the invention belongs] The present invention relates to a film forming method, a film forming apparatus, and an electronic device and an electronic device manufactured using the same. [Prior art] In the past, there have been electronic devices using organic thin films having a thickness of 1 μm or less, such as organic EL displays and organic TFT electronic devices. Generally, the above-mentioned organic thin film is formed by a different forming method depending on whether the organic material constituting the organic thin film is a polymer organic material or a low molecular organic material. For example, in the case of an organic EL display device, the polymer organic material is formed by an inkjet method (for example, refer to Patent Document 1) or a spin coating method, and the low molecular organic material is formed by a vacuum evaporation method. (See, for example, Patent Document 2). [Patent Document 1] Patent No. 3 0 3 6 4 3 6 [Patent Document 2] Japanese Patent Laid-Open No. ^-: 126691

[Summary of the Invention] (Problems to be Solved by the Invention) However, in the above-mentioned inkjet method, problems such as an ejection error of an inkjet head derived from an organic material ink or a deviation in accuracy of an attached portion thereof occur. In addition, in the vacuum vapor deposition method, there are problems that the accuracy or life of a mask used during vapor deposition and the use efficiency of an organic material are reduced. Therefore, in the conventional film formation methods such as the inkjet method and the vacuum evaporation method described above, it is difficult to effectively use materials and it is not easy to form a thin film with high characteristics and high quality. -4-(2) (2) 200426920 The present invention It was developed in order to solve the above-mentioned problems, and its purpose is to provide a material that can be used efficiently and that can accurately control a film thickness of about several tens to several hundred nm and a shape of less than 1 mm, so as to achieve high production efficiency. A film forming method for forming a high-quality thin film, a film forming apparatus, and an electronic device or electronic device manufactured using the same. (Means for Solving the Problems) The film forming method of the present invention is characterized by comprising: a step of converting a material into a gas-like pseudomolecular ion; and setting a potential of a plurality of electrodes provided on a substrate to a predetermined potential. The step of selectively attaching the pseudomolecular ions to the substrate. According to this invention, the material can be formed into fine liquid droplets and ionized or charged to vaporize the liquid droplets, or the gasification can be directly charged to generate pseudo-molecular ions in a gaseous state. The pseudo-molecular ions of the material are sorted from the pseudo-molecular ions, and they fly on the substrate. At this time, a predetermined portion of the substrate is selectively set to a predetermined potential, and a pseudomolecular ion of the material is induced to the predetermined portion by an electrostatic force. Therefore, the above-mentioned materials can be reliably adhered to a predetermined portion. In this way, a high-quality organic thin film can be surely formed at the intended portion. The method for manufacturing an electronic device of the present invention is a method for manufacturing an electronic device formed by laminating a functional material on a substrate into a thin film, which is characterized in that the solution containing the functional material is formed into fine droplets and ionized. Or after being charged, the droplets are gasified to generate gaseous pseudomolecular ions -5- (3) (3) 200426920 Step 1; using the pseudomolecular ions, the solvent from the solvent contained in the solution is made The second step of reducing the content of ions; and providing a plurality of electrodes on the substrate, and selectively setting predetermined electrode potentials of the electrodes to different potentials for the pseudomolecular ions to make the functional materials false. The third step is that molecular ions are selectively attached to the substrate. According to this invention, once a functional material is dissolved, fine droplets are formed and pseudo molecules are ionized. In addition, the pseudo-molecule ion classifies the ionized functional material from the solvent ion, and attaches the classified pseudo-molecule ionized functional material to the substrate. At this time, a predetermined portion of the substrate is selectively set to a predetermined potential, and the functional material in a state in which the pseudomolecule is ionized is induced to the predetermined portion. Thereby, the functional material can be reliably adhered to a predetermined portion. In this way, a high-performance device can be reliably formed at the intended location. In the manufacturing method of the electronic device, a fourth step of shifting the functional material ions in a biased manner after classifying the solvent ions from the pseudomolecular ions and the functional material ions from the functional materials may be further provided. According to this invention, after the classification by the classification unit, the in-plane ion density of the pseudo-molecular ionized functional material emitted by forming a plurality of ray beams can be uniformized, thereby expanding the ray irradiation area. In this method of manufacturing an electronic device, a plurality of the above-mentioned electronic devices are formed on the substrate, and the selection of the plurality of electrodes of each of the electronic devices is selected.-(4) (4) 200426920 The selective potential setting is for each of the above-mentioned electronic devices. The device is based on a common signal line and power line. According to this invention, a plurality of electronic devices formed on a substrate can selectively set a predetermined potential to a plurality of electrodes of each electronic device simultaneously using a common signal line and a power line. Therefore, an organic thin film can be simultaneously formed on a plurality of electronic devices on the substrate. In this method of manufacturing an electronic device, the signal line and the power supply line common to the electronic devices formed on the substrate may be wired so as not to be located between the electronic devices formed on the substrate. Realms cross each other. If this invention is used, since the signal lines and power lines formed on the above-mentioned substrate will be wired so as not to cross each other, a single wiring layer can be used to form the signal lines and power lines. Therefore, multiple layers are used to connect the signal lines and Compared with power cables, it is helpful to improve reliability and reduce manufacturing costs. In this method of manufacturing an electronic device, a setting circuit for selectively setting the plurality of electrodes to a predetermined potential is formed in a formation field of the electronic device formed on the substrate, and the setting circuit may be formed by At least a part of the original electronic circuit of the electronic device in the above-mentioned formation field. If this invention is used, the film-forming voltage setting circuit formed on the substrate can use a part of the electronic circuit of the electronic device. Therefore, as long as some circuits are added to the original circuit of the electronic device, the voltage of the element electrode can be set. This additional circuit can be produced at the same time as the original circuit process without increasing the manufacturing process. In this manufacturing method, each of the formation collars formed on the substrate is a photoelectric device, and the plurality of electrodes are formed of a plurality of photovoltaic elements formed on the photovoltaic device. The element electrode, and the electronic circuit used in the setting circuit may include the element driving circuit of the optoelectronic element. If this invention is used, a film-forming voltage setting circuit for forming a photovoltaic device on a substrate can use a part of the electronic circuit of the photovoltaic device, so as long as some circuits are added to the original circuit of the photovoltaic device, element electrodes can be performed. The additional voltage can be set at the same time as the original circuit. The film forming apparatus of the present invention is a film forming apparatus for forming a film of a material on a substrate, and is characterized by including: an ionization unit that forms fine droplets of the material or a solution of the material, and ionizes the material. After being charged, the droplets are gasified to generate gaseous pseudo-molecular ions. The voltage supply unit is configured to supply a signal or voltage to an electronic circuit. The electronic circuit selectively sets the pseudo-molecule ions on the substrate. The potentials of the plurality of electrodes provided; and a film forming section for attaching material ions among the pseudomolecular ions to the substrate. According to the invention, it is possible to include an ionization unit that forms fine droplets of a material, ionizes or charges the droplets, and vaporizes the droplets to generate gaseous pseudomolecular ions. The resulting material in a pseudo-molecular ion state can be attached to a substrate. At this moment, a predetermined portion of the substrate is selectively set to a predetermined potential, so that the material in a pseudo-molecular state can be induced to the predetermined portion. Thereby, the above-mentioned material can be reliably attached to a predetermined portion. In this way, it is possible to provide a film forming apparatus capable of reliably forming a high-quality film at a target site. (8) (6) (6) 200426920 The film forming apparatus may further include: a solution supply unit for supplying a solution obtained by mixing the material and a solvent to the ionization unit; and a gas supply unit for simultaneously supplying the solution and an inert gas through a nozzle. Spraying to form minute droplets of the solution; and a classification section 'which vaporizes the minute droplets to generate gaseous pseudomolecular ions, and classifies the ions from the material and The ions of the solvent. According to this invention, after the material is dissolved with a solvent in the solution supply part, the material after the solution is formed into minute droplets, and after the ionization or charging, the droplets are gasified to generate a gas. Like pseudomolecular ions. A classification unit is provided to separate the solvent ions' from the pseudo-molecular ions and classify only the ionized materials. The ionized material separated by the classification unit is induced to adhere to the substrate. As a result, it is possible to significantly reduce the amount of impurities in the material adhering to the substrate. Therefore, it is possible to provide a film forming apparatus capable of reliably forming a high-quality film at a target portion. This film forming apparatus may further include a deflection unit that biases the ions from the material classified by the classification unit. According to this invention, the in-plane ion density of the ionized material classified by the classification unit can be made uniform, and the area to be irradiated can be enlarged. In this film forming apparatus, the classification section may further include a mass classification section. The classification section is provided with a plurality of ions derived from the above-mentioned materials in accordance with a mass score according to an applied voltage or current.-9- (7) 200426920 electrode. According to this invention, since the above-mentioned ionized material can be separated from the solvent ions and other ions by having a mass classification device, the purity of the above-mentioned materials can be improved, and ion rays having a uniform molecular weight can be formed. In this film forming apparatus, the quality classification unit may further include a plurality of quality classification units having different distances between the plurality of electrodes. According to this invention, since the ion beam-collecting performance and the ion-classifying performance of the mass classification device can be controlled separately, a high degree of mass classification and ion beam control can be achieved. This film forming apparatus may further include an adjustment electrode, which is provided with a collector electrode, and adjusts the flying speed of the ionized material between the collector electrode and the film forming section. According to this invention, a collector electrode can be further provided, and the potential change between the collector electrode and the film forming portion can be adjusted to a collector electrode potential. Therefore, the above-mentioned ionized material can be attached to the substrate under optimal conditions.

The film forming apparatus may further include a detection unit that detects an amount of ions from the material attached to a predetermined electrode of the substrate. According to this invention, it is possible to easily control the film thickness of a thin film formed on a substrate while monitoring. In this film forming apparatus, the ion-adhered electrode surface of the substrate is arranged so as to slide vertically or horizontally. According to this invention, it is possible to prevent dust (particles) from adhering to a substrate when forming a thin film. In this film forming apparatus, the ionization section, the classification section, and the film formation section described in the above -10-(8) (8) 200426920 may be provided with isolation means for reducing pressure independently of each other. According to this invention, the ionization unit, the classification unit, and the film forming unit can be independently decompressed. The electronic device of the present invention is manufactured by the above-mentioned method for manufacturing an electronic device. According to this invention, for example, a large-sized and high-quality display can be manufactured using the above-mentioned manufacturing method of an electronic device. An electronic device according to the present invention includes the electronic device described above. According to this invention, a device manufactured by the above device manufacturing device can be used to realize, for example, a thin television or a portable device with a display capable of large-scale and high-quality display. The electronic device of the present invention is manufactured using the above-described film forming apparatus. According to this invention, the electronic device manufactured by the above-mentioned film forming apparatus can be used to control the film thickness and shape with high accuracy, and high-quality film can be formed with high production efficiency.

(First Embodiment) Hereinafter, a first embodiment of the present invention will be described in detail with reference to Figs. 1 to 8. The organic thin film forming apparatus of this embodiment is a thin film forming apparatus for forming an organic thin film (pixels constituting an organic EL display capable of full-color display). That is, the organic EL display manufactured by using the organic thin film forming apparatus of this embodiment is an organic EL having pixels for which one pixel is red (r color), green (G color), and blue (B color). monitor. -11-(9) 200426920 Figure 1 is a block diagram illustrating the structure of an organic thin film forming apparatus. As shown in FIG. 1, the organic thin film forming apparatus 10 includes a solution supply section 11 1 ′, a gas supply section 12, a soft ionization section 13, an ion classification section 4, a deflection section 15, and a film formation section 16.

The solution supply section 11 can use various organic materials J (see FIG. 2). The various organic materials j are different materials of red, green, and blue, and constitute a light emitting layer, an electron transporting layer, a hole injection / transporting layer, and the like according to each color. In addition, a solution that is dissolved by the solvent U (see FIG. 2) is prepared in the solution supply unit 11. The gas supply unit 12 includes an inert gas container and a pump for supplying the inert gas. The gas supply unit 12 sprays the inert gas to the soft ionization unit 13 at the lower stage at high speed along the outer peripheral portion of the capillary tube that introduces and discharges the solution made in the solution supply unit 11.

The soft ionization section 13 causes the solution supplied by the solution supply section 11 and the gas supply section 12 to form fine droplets, and after ionizing or charging, the droplets are gasified to transform into a gas. Like pseudomolecular ions (step 1). Then, the pseudomolecule ions are induced to the ion classification section 14 in the next stage by an electrostatic force. In addition, pseudomolecular ions include ions added to the molecule itself, and chemical species generated by the grouping, reunion, or combination of molecules or atoms are generated by ionization or charging. The ion classification unit 14 sorts and sorts the pseudo-molecule ions generated by the soft ionization unit I 3 in the preceding stage to form ion beams of uniform mass. At this time, the content of the solvent ions is reduced by the pseudomolecular ions (step 2). Then, the solvent ions and the organic material ions from the organic material j are further classified by the pseudomolecular ions, and the ion beam is output to the sub-segment by the sub-classification unit 14-12 (10) (10) 200426920.的 向 部 1 5。 The deflection section 1 5. Furthermore, the flattening section 15 causes the above-mentioned organic material ions from the ion classification section 14 to be biased to move (step 4). The flat part 15 causes the ions of the functional material to move in a biased manner, reducing the uneven density of the ion rays, and expanding the cross-sectional area of the rays. The film formation section 16 causes the ion rays passing through the deflection section 15 to adhere to the main substrate S (_ 照 ® 2) ′ to be laminated to form a predetermined organic thin film (third step). Hereinafter, the organic thin film forming apparatus 10 including the above-mentioned members 1 1 to 16 will be described in detail with reference to FIGS. 2 to 4. Fig. 2 is a block diagram showing an organic thin film forming apparatus 10 according to this embodiment. In FIG. 2, the “organic thin film forming apparatus” is provided with a solute tank 21 and a solvent tank 22 °. The solute tank 21 is a tank for storing an organic material J for forming various thin films. The various thin films are formed on the main substrate S. The light emitting layer of the pixel is an electron transport layer, an electron injection layer, a hole transport layer or a hole injection layer. In the solute tank 21, the organic material j is stored in a highly concentrated and solubilized state. The above-mentioned organic material j is an organic material capable of forming π-conjugated quotient molecules in the light-emitting layer, for example, polythiophene (PAT), polyparaphenylene (ρρρ), polyparastyrene (PPv), and polybenzene It is a PF (polyvinylcarbazole) derivative. In addition, low-molecular-weight organic materials include rubrene, benzene, 9, 10: biphenyl onion, tetraphenylbutadiene, naphthalene red, and coumarin 6, which are soluble in benzene derivatives. Compounds such as quinacridone or dendrimers. The organic material constituting the hole injection / transport layer includes, for example, a PEDOT + PSS-based, polyaniline + pss-based'phthalocyanine-based metal complex. The solvent tank 2 is a tank for storing the solvent -13- (11) (11) 200426920 U used to dilute the various organic materials mentioned above. Examples of the solvent U include xylene, benzene, toluene, tetrahydrofuran, dichlorobenzene, methyl ethyl ketone, dioxane, alcohols such as methanol, ethanol, and hexafluoro · 2-propanol. Such as fluorinated alcohols, propanol, N-methylpyrrolidone, dimethylamidamine, dimethylene, etc., depending on the suitability of the solute (organic material J), the best one is selected. The solvent U stored in the solvent tank 2 2 may not be the same as the solvent of the solution used in the solute tank 21. The solute tank 21 and the solvent tank 22 are connected to each other via a transfer pipe C, and are connected to a constant-flow pump 23. The dilute solution of the organic material j diluted by the solvent U at a predetermined ratio is supplied to the constant-flow pump 23 through the transfer pipe C. The organic thin film forming apparatus 10 includes the above-mentioned gas supply unit 12 composed of a constant-flow pump 23, a carrier gas pump 24, a gas container GB, and a heating gas pump 25. A capillary tube NZI is connected to the constant flow pump 23. A gas pipe NZ2 (coaxial to the capillary NZ1) is provided on the outer periphery of the capillary NZ1. Capillaries N Z 1 may also be heated by installing a heater at the front end Az if necessary. The above-mentioned gas pipe NZ2 is connected to a carrier gas pump 24. The carrier gas pump 24 is connected to the gas container OB. The above-mentioned gas container GB is filled with a high-purity inert gas such as helium (He), nitrogen (N2) or argon (A r), and carbon dioxide (c 0 2). From a cost perspective, it is best to use nitrogen (N2) or carbon dioxide (C02). The spray nozzle composed of the capillary tube NZ1 and the gas duct NZ2 is inserted into the ionization chamber C1 of the processing chamber Vc. A first vacuum pump P1 is connected to the ionization chamber c]. The pressure in the ionization chamber C1 can be independently reduced by operating the -14- (12) (12) 200426920 of the first vacuum pump P1. In addition, the constant-flow pump 23 causes the dilute solution supplied from the solution supply section 11 through the conveying pipe c to flow through the capillary NZ :! to a constant flow, that is, a pulseless flow, to the ionization chamber C. 1 within. In this way, the above-mentioned diluted solution forms minute droplets in a mist form, and is then supplied to the above-mentioned ionization chamber C1. In addition, the carrier gas pump 24 causes the inert gas supplied from the gas trough GB to inject the outer periphery of the dilute solution sprayed from the capillary NZ1 through the gas pipe NZ2 at a high velocity near the speed of sound to be reduced. Pressure inside the ionization chamber C 1. In this way, the sprayed dilute solution forms minute droplets of less than 1 μm, and friction occurs between the minute droplets and the molecules of the inert gas constituting the carrier gas, so the tiny liquid Drops can be ionized or charged. The above-mentioned minute liquid droplets in this embodiment are negatively ionized. The heating gas pump 25 is connected to the gas container GB. The air supply port 25a of the heating gas pump 25 is connected to the above-mentioned ionization chamber C1. The heated gas pump 25 transmits an inert gas heated by the air supply port 25a. Thereby, the generated small droplets are gasified to form gaseous pseudo-molecular ions, and when the inert gas is sprayed into the decompressed ionization chamber C1 by the gas pipe NZ2, the thermal expansion can be achieved by adiabatic expansion. This prevents the front end portion Az of the capillary tube NZ1 or the front end portion of the gas duct NZ2 located near the capillary tube NZ1 from being cooled. That is, to prevent the front end portion Az of the capillary tube N Z 1 from being cooled, the diluted solution is condensed and fixed to the front end portion Az, and the spraying ability of the nozzle is reduced. As a result, the amount of spray of the diluted solution can be stably controlled by the capillary tube N Z]. -15- (13) 200426920 The above-mentioned ionization chamber Cl is provided with an ultrasonic mist electrode with a strong electric field. Benefit:) G. The supersonic wave atomizer 30 with a strong electric field electrode includes ultrasonic vibration 31 'vibrating plate electrode 32 and a peltier element 33. The ultrasonic vibrator 3 is made of a piezoelectric material or the like. The plate electrode 32 is held. The ultrasonic transducer 31 is connected to a Peltier element 33. The vibration plate electrode 32 and the Peltier element 3 3 are connected to a voltage generating device Q provided outside the processing chamber V c. That is, although the ultrasonic vibrator 3 1 is not shown, a vibration control device for supplying a high voltage (for vibrating the ultrasonic vibrator 3 1) is actually connected to the vibrating plate electrode 3 2. The device Q supplies a voltage several kV higher than the first voltage VI of the induced electrode voltage. The diaphragm electrode 32 is made of a highly resistant metal such as stainless steel or titanium, or a conductive ceramic such as silicon nitride, titanium boride (TiB2), and zirconium boride (ZrB2). A plurality of protrusions 3 2 a are formed on the surface, so that it is easy to discharge electric charges from the tip of the protrusions. In addition, the Peltier element 33 cools the sonic vibrator 31 by the current P supplied from the voltage generating device Q, so that the deterioration of the ultrasonic vibrator 31 due to vibrational heat can be controlled. The ultrasonic atomizer 30 with a strong electric field electrode configured as described above is provided on the side wall of the ionization chamber C1 so as to be able to inclinely face the upper spray nozzle surface formed by the capillary NZ1 and the gas duct NZ2. Among the fine droplets sprayed by the spray nozzle, a larger mass of droplets will protrude from the vibrating vibrating plate electrode 32, and will be miniaturized into a fine liquid. In addition, after the soft ionizer 0 is connected to the 5th frequency 0, the Va gold system is super-transmitted. It is described by the infusion of -16- (14) (14) 200426920. Moreover, the organic thin film forming apparatus 10 has a high absorbance for the solvent U. In addition, it is also possible to provide a laser oscillator 34 that emits a low absorbance wavelength (ultraviolet, linear or infrared) to the organic material J. The laser L emitted from the laser oscillator 34 is reflected and scanned by the scanning mirror 35, and is introduced into the ionization chamber C1 through an entrance window V provided on a side wall of the ionization chamber C1. In addition, the laser L instantly heats and vaporizes the heated inert gas supplied by the heating gas pump 25 and the fine liquid droplets generated by the spray nozzle and the vibration plate electrode 32 to generate gas-like pseudomolecules. Ion 〇 The soft ionization unit 13 is constituted by the spray nozzle and the ultrasonic atomizer with a strong electric field electrode 30, the heating gas pump 25, the laser oscillator 34, and the vacuum pump P1. A first baffle T1 is provided on the side wall of the ionization chamber C1 between the ultrasonic atomizer 30 and the induction electrode 41. When the first baffle plate I is opened, the pseudo-molecule ions are introduced into an ion classification chamber C2 adjacent to the ionization chamber C1. Here, the relationship between the flying speed υ of the ion and the acceleration voltage E, the number of ion charges Z, the mass of the ion m, and the charge e of the electron can be: υ = (2eZE / m) 172 According to this formula, if the mass of the ion is πm If the difference is large and the ion charge number Z is different, the ions' flying speed will be greatly different, and it is easy to separate specific ions. The ion classification chamber C2 uses the first baffle T1 and the second baffle T2 to separate the ionization chamber C1 and the film formation chamber C3 independently. The ion classification chamber C2 is provided with second to fourth vacuum pumps P2, P3, and P4. -17- (15) (15) 200426920 The ion sorting chamber C2 is provided with an induction electrode 41, a cooling electrode 42, a multi-pole sorting and collecting device 43, a collector electrode 44, an adjustment electrode 45, and a bias magnet 46. In addition, the above-mentioned respective functional means 4 1 to 46 are arranged in sequence from the upstream side, that is, from the ionization chamber C 1 side, to the induction electrode 4], the cooling electrode 42, the multi-pole sorting and collecting device 43, and the collector electrode 44 , The adjustment electrode 45 and the bias magnet 46. The induction electrode 41 is formed with a plurality of grids 41a in a portion corresponding to the opening of the first shutter T1. The induction electrode 41 is connected to the voltage generating device Q provided outside the ion classification chamber C2. The first voltage VI generated by the voltage generating device Q is supplied to the induction electrode 41. This first voltage VI is a positive high voltage for the voltage Va of the diaphragm electrode 32 constituting the ultrasonic atomizer 30 described above. That is, the induction electrode 41 is used to electrically draw the pseudo-molecular ions in the ionization chamber C1 to the induction electrode 41, and is introduced into the ion classification chamber C2. At this time, the moving direction and speed of the pseudo molecular ions introduced through the ionization chamber C1 through the first baffle plate T] are provided by the arrangement of the grid 4a. The cooling electrode 42 is provided with a hole portion at a portion corresponding to the gate electrode 41a of the induction electrode 41 described above. The cooling electrode 42 is electrically connected to the voltage generating device Q. The second voltage V2 of the negative voltage is applied to the cooling electrode 42 by the first voltage VI generated by the voltage generating device q. As a result, solute ions with a large molecular weight are collected at the center of the orbit. The cooling electrode 42 is connected to a cooling device provided outside the ion classification chamber C2, and is cooled by the cooling device. By providing the cooling electrode 4 2 ′ configured in this way, among the above-mentioned pseudomolecular ions passing through the gate electrode 4] a of the induction electrode 41, the molecular weight can be made smaller by -18- (16) (16) 200426920 a solvent that is easy to diffuse. Pseudomolecular ions (solvent ions), dew condensation is removed. The removed solvent can be reused. Thereby, the ratio of the solute ions (functional material ions) in the pseudo-molecular ion current can be increased ', and the classification burden of the multiple-pole polarizing and sorting device 43 in the lower stage can be alleviated. The pseudo-molecule ions are introduced into the multipole sorting and condensing device 43 at the lower stage. The multiple-pole sorting and condensing device 43 is provided with two quadrupole-type mass sorting devices 43a and 43b in this embodiment. Specifically, in the two first and second quadrupole mass classification devices 43a and 43b connected in series, a first quadrupole mass classification device 4 3 is provided on the upstream side, that is, on the cooling electrode 4 2 side. a. A second quadrupole mass classification device 43b is provided on the downstream side, that is, on the lower side of the collector electrode 44b. FIG. 4 (a) is a front view showing the first quadrupole mass classification device 43a. Fig. 4 (b) is a sectional view showing the first quadrupole type mass classification device 43a. As shown in FIG. 4 (a), the first quadrupole mass classification device 4 3 a is a set of two cylindrical electrodes an, an + 1, bn, bn + 1 (η being Natural number). In addition, in each group of electrodes an, an + 1, bn, bn. + 1, a DC voltage and an AC voltage of reverse polarity are applied in an overlapping manner. In addition, an ion beam passing hole Η 1 is formed in a portion surrounded by the electrodes an, an + i, bn, and bn + 1 of each group. Pseudomolecular ions that have just passed through the above-mentioned grid 4] a are passed from the ion beam through the hole Η1 through the first quadrupole mass classification device 43a, thereby separating the solvent pseudomolecular ions (solvent ions) constituting the pseudomolecule ions ) And solute ions (ionized organic materials). Fig. 3 (a) is a front view showing a second quadrupole type mass classification device 43b. 3 (b) is a cross-sectional view showing the second quadrupole mass classification device -19- (17) (17) 200426920 at 43b. As shown in FIG. 3 (a), the second quadrupole mass classification device 4 3 b is a pair of cylindrical electrodes An, An + 1, Bn, and βη + 1 (η is Natural number). In addition, a DC voltage and an AC voltage of reverse polarity are applied to the electrodes An, Αη + 1, Bn, Βη + 1 of each group in an overlapping manner. Further, ion beam passing holes Η 2 are formed in a portion surrounded by the electrodes An, Αη + 1, Βη, Βη + 1 of each group. The pseudo-molecular ions emitted from the ion beam passing through the quadrupole mass classification device 43a through the hole Η1 are passed through the ion beam passing hole H2 into the second quadrupole mass classification device 43b, so as to further separate the structure. Pseudomolecular ions (solvent ions) and solute ions (ionized organic materials). That is, the DC voltage and the AC voltage applied to the cylindrical electrodes An, An + 1, Bn, and Bη + 1 having a pillar member at the center are optimized to cause the solvent ions constituting the pseudomolecular ions to move from the ion orbitals. The surface is separated, and the remaining solute ions are collected on the ion orbital plane, so that the pseudo-molecule ion rays of the primary classification are uniform. This pseudomolecular ion beam is made into ion beam IB in this embodiment (see FIG. 3 (b)). The diameter φ2 of the ion beam passage hole H2 in the second quadrupole mass classification device 43b is smaller than the diameter φ1 of the ion beam passage hole 3 in the first quadrupole mass classification device 4 3a (see FIG. 4 ( b)) smaller. The first quadrupole mass classification device 43a is an open quadrupole mass classification device without a container. Therefore, it is possible to easily release the solvent ion from the pseudo-molecular ion passing through the induction electrode 41 to the outside of the quadrupole mass classification device 43a. On the other hand, the second quadrupole mass classification device 43b is a closed -20- (18) (18) 200426920 closed quadrupole mass classification device, and a fourth vacuum pump is connected to the opening portion of the container. P4. By the operation of the fourth vacuum pump P4, the second quadrupole mass classification device 43b is brought into a high vacuum state. As a result, it is possible to obtain a multi-pole type sorting and condensing device 43 capable of simultaneously classifying a large number of ions and generating long ion rays. As shown in FIG. 2, the collector electrode 44 is formed with a grid electrode 44a at a portion corresponding to the ion beam passing hole H2 of the multipolar-type sorting and collecting device 43. The collector electrode 44 is electrically connected to the voltage generating device Q. The collector electrode 44 is supplied with a voltage at the same level as the second voltage V2 supplied to the cooling electrode 42. In addition, the collector electrode 44 electrically draws the ion beam IB formed by the multipole-type sorting and condensing device 43 and passes through the grid 44a. The ion beam IB passing through the grid 44a is guided to the adjustment electrode 45 at the subsequent stage. The adjustment electrode 45 is electrically connected to the voltage generating device Q. A third voltage V3 from the voltage generating device Q is supplied to the adjustment electrode 45. The third voltage V3 and the first and second voltages VI and V2 can independently adjust the potential difference between the adjustment electrode 45 and the main substrate S, thereby enabling the ion beam IB to be set to adhere to the main substrate S in a stable manner. On the prescribed location. As a result, it is possible to control the speed at which the ion beam IB is incident on the film forming section 16 to an optimum one. It is preferable that this incident velocity is a low velocity to the extent that the orbit of the ion beam IB is bent based on the non-adherence voltage Vs and the adhesion voltage V4. In this way, the ion classification unit 14 is configured by the induction electrode 4 1, the cooling electrode 42, the multipolar sorting and collecting device 43, the collector electrode 44, and the adjustment electrode 45. -21-(19) (19) 200426920 A bias magnet 46 is provided on the downstream side of the adjustment electrode 45. The bias magnet 46 is electrically connected to the voltage generating device Q. The bias magnet 46 is an electromagnet that generates a bias magnetic field under a periodically varying excitation current (corresponding to the current IM supplied by the voltage generating device Q). In addition, the ion beam IB is caused to pass through the periodic fluctuation magnetic field generated by the bias magnet 46, and the ion beam IB is shaken to improve the uniformity of the radiation density. This deflection magnet 46 will constitute the above-mentioned deflection portion 15. The deflection magnet 46 may also be a means for deflecting a ray in an electrostatic field. Further, a second baffle plate T2 is provided on the downstream side of the ion classification chamber C2, that is, a partition wall portion facing the grid 4 5a of the adjustment electrode 45. When the second shutter T2 is opened, the ion beam IB is introduced into the film forming chamber C3 adjacent to the ion classification chamber C2. The film forming chamber C3 can be formed in an independent airtight state by the second baffle plate T2 and the valve B described above. A fifth vacuum pump P5 is provided in the film forming chamber C3. The inside of the film forming chamber C3 can be depressurized by closing the second baffle plate T2 and the valve B and operating the fifth vacuum pump P5. A stage slide device 51 and a stage 52 are provided in the film forming chamber C3. The stage slide device 51 is mounted on the side wall of the film forming chamber C 3. Specifically, the stage slide device 5] is attached to the side wall 50 facing the second shutter T2. The stage slide device 51 is controlled by a stage controller 5 3 provided outside the film forming chamber C 3. The stage slide device 51 can slide and control the stage 52 along the side wall 50 of the film forming chamber C3 by the stage controller 53. A stage 52 is provided on the stage slide device 51. Main substrate -22- (20) (20) 200426920 S can be placed and fixed on the stage 5 2. That is, the main substrate S is slidingly controlled along the side wall 50 of the film forming chamber C3 by the stage controller 53 via the stage 52. In this way, the main substrate S is placed along the side wall 50 of the film forming chamber C 3, so that it is difficult for dust to adhere to the main substrate s. As a result, a high-quality organic thin film can be formed on the main substrate S. In addition, the organic thin film forming apparatus 10 shown in FIG. 2 can also be rotated 90 degrees as a whole, and the main substrate S can be slid and controlled on the stage controller 53 with the organic thin film forming surface of the main substrate S in a vertical direction. This has the same effect on dust. The main substrate S includes at least one pixel circuit that is an electronic circuit that controls pixels in advance. The pixel circuit is a matrix display panel chip τ. More specifically, as shown in FIG. 2, the main substrate S is formed with a switching element formed of a TFT, an organic TFT, 1C, or the like, that is, a switching transistor Qsw. Further, the main substrate S is formed with a partition wall, i.e., a partition wall K, at a predetermined interval on the side of the second baffle plate T2 to separate pixels. A transparent pixel electrode M made of, for example, indium-tin oxide (ITO) is formed between the partition walls K in advance. A conductive film r is formed on the partition wall κ. In addition, the partition wall K is not necessarily provided before the organic thin film is formed, and may be formed after the organic thin film is formed. However, the conductive film R is preferably provided before the formation of the organic thin film between the pixel electrodes M. The pixel electrode M may be electrically connected to the voltage generating device Q via a switching transistor Q SW constituting the pixel circuit. The pixel electrode M may be applied with a non-adhering voltage Vs from the voltage generating device Q. The non-adherence voltage Vs is also applied to the conductive film R formed on the partition wall K. That is, according to the switching transistor Q sw> 23- (21) (21) 200426920, the potential of the pixel electrode M that is selectively connected to the voltage generating device Q is formed to conduct electricity formed on the partition wall K. The sexual film R has the same potential. The daytime electrode M can be electrically connected to the voltage generating device Q via an electric flowmeter 5 4 provided outside the film formation chamber C 3 according to the switching transistor Q sw constituting the pixel circuit. The output adhesion voltage V4. In addition, the pixel electrode M electrically connected to the electric flow meter 54 flows a current along the circuit constituted by the pixel electrode M and the voltage generating device Q under the irradiation of the ion beam IB. By detecting the current level of the current, it is possible to determine how much ion beam IB is irradiated to the pixel electrode M. That is, the electric flow meter 54 outputs a signal corresponding to the amount of the organic material J attached to the pixel electrode M to the stage controller 53 and the constant flow pump 23. Therefore, a simple method can be used to accurately measure the film thickness of the organic thin film formed on the pixel electrode M. In addition, the above-mentioned electric flow meter 54 and the stage controller 53 of the slide control main substrate S are connected. The stage controller 53 can control the sliding speed of the main substrate s in accordance with the current level detected by the electric flow meter 54. As a result, the organic thin film can be efficiently and uniformly formed on the entire surface of the pixel electrode M with a predetermined thickness accuracy. As shown in Fig. 2, a selection control circuit 55 is formed on the main substrate S to control the switching transistors Qsw. The selection control circuit 55 operates with the attached voltage V4 and the non-attached voltage Vs as a power source, and is constituted by a counting circuit and a decoder circuit that distinguishes its output, in accordance with a reset signal RST and a selection signal supplied from the outside of the film forming chamber C3. The input of Sel is used to control the potential of the pixel electrode M to an attached voltage v 4 or a non-attached voltage -24- (22) (22) 200426920 a control signal SG with a potential of VS. If the reset signal RST is supplied to the selection control circuit 55, the circuit in the main substrate S and the selection control circuit 55 that controls the switching transistor QSW will be initialized, and output through the switching transistor Qsw to make all the above-mentioned images The element electrode M is electrically connected to the control signal SG of the attachment voltage V4 of the voltage generating device Q and outputs the control signal SG. Next, if a selection signal SEL pulse is input to the selection control circuit 55, the selection control circuit 55 will only power the pixel electrodes M specified in the pixel electrodes M through the electric flow meter 54 based on the switching transistor Qsw. It is connected to the attachment voltage ν 4 'supplied from the voltage generating device Q. The other pixel electrodes M will output the non-attached voltage V for electrical connection to the voltage generating device Q according to other switching transistors q sw. s control signal SG output. Here, the adhesion voltage ν 4 is the local most potential among the electrodes of the organic thin-film formation device 10. The non-applied voltage Vs is preferably equal to or lower than the third voltage V3 applied to the adjustment electrode 45. Next, the selection signal SEL is input to the selection control circuit 55 again. In this way, according to the selection signal SEL, a predetermined other pixel electrode M can be applied with the attachment voltage v 4 through the electric flow meter 54, and applied to the other pixel electrode M and the conductive film R of each partition κ. The non-adherence voltage Vs supplied from the voltage generating device Q. As a result, only the predetermined pixel electrode µ connected to the electric flow meter 54 can induce the above-mentioned ion beam IB and attach pseudomolecular ions to the organic material. That is, a predetermined electrode selection state is set when each of the input selection signals SEL to the selection control circuit 55 is set ', whereby the above-mentioned ion rays can be selectively induced to a predetermined pixel electrode M, and pseudomolecular ions of the organic material can be attached. -25- (23) (23) 200426920 In addition, driven by the above-mentioned stage slide device 51, the main substrate S placed on the stage 52 can be positioned opposite to the grid with a predetermined pixel electrode M Pole 4 5 a way to slide. At this moment, as described above, the predetermined pixel electrode M is electrically connected to the attachment voltage V 4 through the electric flow meter 54, and other pixel electrodes M and the conductive film R on each partition wall K are applied. No voltage Vs is applied. Therefore, the organic material pseudomolecular ions can be attached to a predetermined pixel electrode M. The film formation unit 16 is constituted by the stage slide device 51, the stage 52, the stage controller 53, and the electric flow meter 54. In this way, after the organic material J is solubilized with the solvent U, pseudo-molecule ions are formed, and then the solvent ions are separated from the pseudo-molecular ions, so that only the organic material ions are attached to the main substrate S. Then, a voltage 'of the organic material j for inducing the ionization is applied to a predetermined portion of the main substrate S, so that the organic material J can be reliably attached to a target portion. Therefore, the organic material J can be used efficiently. Also, at this moment, after the organic material J is dissolved with the solvent U, the solvent ions are separated in a state of pseudo-molecule ionization, and only the organic material j [is attached to the main substrate S, so impurities can be prevented as much as possible. Mix in. Therefore, it is possible to form a high-purity thin film with a predetermined uniform film thickness at the intended portion. Next, a method for manufacturing a display panel of an organic EL display formed by the organic thin film forming apparatus 10 configured as described above will be described. 5 and 6 are cross-sectional views showing an organic EL display device formed by an organic thin film forming apparatus. In addition, the pixels of the same mark shown in FIG. 5 and FIG. 6 are all pixels of the same color. Also, FIG. 7 shows the reset signal line LR when a plurality of display panel crystals -26- (24) 200426920 PT are formed on the main substrate S, the signal line LS is selected, and the electric voltage LV4 and the non-voltage line LVs are not separated. The layouts of the display panel wafers PT are arranged so as to intersect each other. As a result, each display panel PT will respond to the internal state of the reset signal RST and the selection signal SEL at the same time, so the supplementary work on the solvent ions of the main substrate S is performed continuously. In addition, when resetting the signal line LR, selecting the signal line LS, the pressure line LV4, and the voltage lines LVs that are not adhered to each wafer of the display panel J, it is best to use a conductive material that is difficult to corrode from the scribe section, or A conductive wiring material having a high corrosion resistance such as ITO or titanium nitride (Ti) is used through the contact hole. As shown in FIG. 7, each of the multiple number lines LR formed on the main substrate S, the selection signal line LS, the attached voltage line LV4 and the non-attached line LVs are formed on the main substrate S with the display surfaces. The intermediate fields between the fields of the film PT come in such a way that they do not cross each other. Therefore, the reset signal line LR, the signal line LS, the attached voltage line LV4 and the non-attached voltage line LVs can be formed with a single wiring layer. Multiple layers are used on the main substrate S to form reset signal lines LR, selection lines LS, attached voltage lines LV4 and non-attached voltage lines LVs. No new manufacturing steps are added. Use the most suitable wiring layer for the original circuit. The wiring layer is used for wiring, so that both reliability and cost can be taken into consideration. First, the valve B is opened with the second shutter T2 closed, and the main substrate S is set on the stage 52. Next, the fifth vacuum $ is operated to form a predetermined vacuum degree, and then oxygen and moisture are removed. The stage 52 is controlled simultaneously, and a predetermined electrode M formed on the main substrate S can be pressed against the grid electrode 4 5 a of the adjustment electrode 45 to supply the plate crystal to be charged in the same industry. ^ PT material is used to nitride the bit-voltage voltage plate crystal wiring selection. This is better than the selection. The i P5 time-sliding pixel method-27- (25) 200426920 is used to move and position the main substrate S. In the polymer type organic el display panel, the hole injection / transport layer that should be formed first is a thin film that is commonly formed on all the picture electrodes M. Therefore, at this moment, the switching transistor Qsw will be controlled according to the control signal SG provided by the selection control circuit, and some of the pixel electrodes M will be electrically connected to the attachment voltage V4 via the electric flow meter 54. The non-adhering voltage V s supplied from the voltage generating device q is applied to the conductive film R formed on each of the partition walls κ. Since the conductive film r formed on each partition wall K is formed so as to surround each pixel, the partition wall K is electrically connected to the partition wall K. In this state, if the second baffle plate T2 is opened, the ion beam IB of the organic material J supplied into the hole injection / transport layer Υ1 will be directed to the second baffle plate T2 toward a plurality of predetermined pixels. The electrode M is irradiated, and is selectively attached to the pixel electrode M with electric power (FIG. 5a). If the organic pseudomolecular ions are attached to the pixel electrode M, the resistance of the part will increase, and the non-attached electrode parts will preferentially adhere to the organic material pseudomolecular ions, which will self-integrate to form a uniform film thickness. In addition, once a predetermined film thickness is measured by using the current amount 54, the stage 5 2 is slidingly controlled, and other adjacent pixel electrodes M can face the gate 45a of the adjustment power 45. Way to move the main substrate s. At this moment, since the ion beam IB will continue to be irradiated ', the adjacent pixels after the movement will be immediately irradiated with ion beams ΪB and begin to form a film. Also, as in the first process, once the predetermined current (film thickness) is measured using the electric flow meter 54, the stage 52 is slidingly controlled, and the adjacent element electrodes M can be opposed to each other. The above grid 4 5 a way to move the main substrate

The electrical energy connected to the element 55 is in the form of daylight S -28- (26) (26) 200426920 (Figure 5b). Thereafter, the same operation as described above is repeated successively, and a hole injection / transport layer Y1 is formed on the entire pixel electrode M (Fig. 5c). As shown in FIG. 3 (a), the width of the ion beam IB can be formed by extending the width of the multipole-type sorting and concentrating device 43 or the width of each grid 41a, 44a, 45a. Therefore, it is possible to form a hole injection / transport layer Y 1 for the full pixels of the main substrate S by one stage scanning movement. After attaching the hole injection / transport layer to the full pixels, annealing is performed in a vacuum furnace, so that The hole injection / transport organic molecules are fixed to the pixel electrode M. If a hole injecting / transporting layer Υ1 is formed on the entire pixel electrode M, an organic material of each of R, G, and B emitting colors: [is used to form a light emitting layer. First, an example will be described in which a film is formed with a light emitting color of R color. In this case, one device of the same type as the organic thin film forming device 10 shown in FIG. 2 is allocated exclusively for each light emission color, and is connected in series, and the main substrate S is moved under each device 10 to form a film. The movement between the devices of the main board S is performed through the valve B described above. The film formation process is the same as in the case of hole injection / transport layer 1. That is, the valve B is opened with the second shutter T2 closed, and the main substrate S is placed on the stage 52. Next, the fifth vacuum pump P5 is operated to form a predetermined degree of vacuum to remove oxygen or water. At the same time, the stage 52 is slid and the main substrate S is moved so that a predetermined pixel electrode M formed on the main substrate S can face the gate electrode 4 5 a of the adjustment electrode 45. At this moment, the switching transistor Qsw will be controlled according to the control signal SG provided by the selection control circuit 55, so that all the above-mentioned R-color pixel electrodes M pass the above-mentioned current -29-(27) (27) 200426920. Meter 5 4 is electrically connected to the attachment voltage v 4. At this moment, the switching transistor Qsw is controlled so that the non-adhered voltage Vs supplied from the voltage generating device Q is applied to the other pixel electrodes µ and the conductive film R formed on each of the partition walls K. If the second baffle plate T2 is opened in this state, the ion beam IB of the organic material J forming the light-emitting layer Y2R will be irradiated from the second baffle plate T2 by a plurality of predetermined pixel electrodes M to form a light-emitting layer Y2R (FIG. 6a). In addition, if a predetermined current 値 (film thickness) is formed based on the electric flow meter 54, the R-color pixel electrode M periodically arranged by slidingly controlling the stage 52 will be able to face the above adjustment. The main substrate S is moved by the grid 45a of the electrode 45. At this moment, the switching transistor Q sw ′ will be controlled according to the control signal SG provided by the selection control circuit 55, and the predetermined pixel electrode M has been electrically connected to the attachment voltage V4 by the electric flow meter 54. Therefore, the predetermined pixel electrode M can be irradiated with the ion beam IB immediately, and the predetermined organic material ions can begin to adhere. In addition, once a predetermined film thickness is measured by the electric flow meter 54, the R-color pixel electrode M periodically arranged by slidingly controlling the stage 52 is opposed to the adjustment electrode 45. Way of moving the gate 45a to move the main substrate S. Thereafter, a light-emitting layer Y2R is formed on the pixel electrode M of each R color in the same manner as described above (Fig. 6b). Next, annealing is performed at a predetermined temperature so that the light emitting layer Y2R is fixed on the hole injection / transport layer Y1. This annealing can also be performed once after the full pixels of R, G, and B are attached to each of the light-emitting organic materials. Thereafter, the pixel electrode M of each B color is sequentially operated in the same manner as described above, and a light-emitting layer is formed on the pixel electrodes M of the entire B color. 2B -30- (28) (28) 200426920 After the predetermined hole injection / transport layer γ1 and the light-emitting layer Y2 are laminated on the electrode M, the main substrate S will open the valve B and transport it to the adjacent processing chamber. Then, in this processing chamber, for example, the electrode Y3 and the encapsulation portion BR are formed on the light-emitting layer formed by the organic thin film forming apparatus 10 by a predetermined process by a vapor deposition method. In this way, an organic EL display panel is manufactured (Fig. 6c). Then, as shown in FIG. 7, the dicing process is performed on the main substrate S on which the plurality of display panel wafers PT are formed, and the display panel wafers PT are cut out and panelized, respectively. Further, a driver 1C, a display power circuit, and the like are mounted on each of the cut out display panel wafers PT, and they are applicable to various electronic devices as organic EL displays. FIG. 8 is a film forming voltage setting circuit (voltage selection circuit 60, AND circuit 61) for selectively applying the potential of the pixel electrode M of each display panel wafer PT formed on the main substrate S shown in FIGS. 2 and 7. An example of the electrical connection relationship between the OR circuit 62 and the charging transistor 63) and the display driving circuit (the scanning line driving circuit 64 and the data line driving circuit 65, the element driving circuit of the pixel PX). As shown in FIG. 8, a pixel electrode M is arranged in each display panel wafer PT. The pixel electrode M is a red (R) organic EL element REL, and green ( G) Organic EL element GEL, blue (B) organic EL element BEL. Each organic EL element is formed by the manufacturing method described in Figs. 5 and 6. Further, an element driving circuit is formed in each pixel Px and includes a switching transistor Qsw that drives one electrode of each organic EL element REL'GEL, BEL, and a driving transistor Qd. -31-(29) (29) 200426920 Further, each display panel wafer PT is formed with a voltage selection circuit 60 for applying the above-mentioned adhesion voltage V4 and the above-mentioned non- adhesion voltage Vs to the pixel electrode M, and the adhesion voltage V4 passes through The input voltage line LV4 is input, and the non-adherence voltage V s is input via the non-adhesion voltage line LV s. A selection control circuit 55 is formed in the voltage selection circuit 60. In addition, the reset signal RST and the selection signal SEL are input to the selection control circuit 55, the scan line drive circuit 64, and the data line drive circuit 65 via the reset signal line LR and the selection signal line LS, respectively. The selection control circuit 55, the scanning line driving circuit 64, and the data line driving circuit 65 are initialized by the input of the reset signal RST, respectively. If the selection signal SEL is input in the input of the reset signal RST, the selection signal is output from the gate of the AND circuit 61 to the selection signal line LS, and the scanning signal is output from the gates of the entire 0 R circuit 6 2 to the scan. Line l 1, L2, ... In addition, if the data lines XI, X2, X3, ... which transmit the output of the data line drive circuit 65 among the input of the reset signal RS T are high impedance, if the selection signal SEL is input in the input of the reset signal RST, the signal is selected. It will be output from the gate of the AN D circuit 61 to the selection signal line LS, the charging transistor 63 will be turned on, and the entire data lines X1, χ2, X3, ... will be set to the ground potential. As a result, the switching transistor qsw of all pixels Px will be turned on, and the potentials of the data lines XI, X2 'X3, ... will be transmitted to the gate of the driving transistor Qd, and the above-mentioned driving transistor Qd will be turned on ^ thereby The entire pixel electrode M can be provided with an attached voltage V 4 or a non-attached voltage vs. -32- (30) which is selectively imparted via the display driving power lines ve 1R, V e 1 G, and V e 1 B. (30) 200426920 Any potential. At this moment, since the organic EL elements REL, GEL, and BEL are not completed, a current does not flow through the organic EL elements REL, GEL, and BEL. In addition, the selection control circuit 55 counts the selection signal SEL from the initial state with an internal counting circuit, thereby generating a plurality of states, and outputs the selection control signals SGR, SGG, and SGB corresponding to these. That is, during the period from the input of the reset signal R S T to the input of the selection signal s E L, the selection control circuit 55 is initialized, and the entire selection control signal is outputted in a manner that the voltage Vs is not applied. During the formation of the organic thin film, the reset signal is continuously input. If the first selection signal is input during this period, the initial state of the selection control circuit 55 will be released, and the counting of the selection signal SEL will be started by the internal counting circuit. The selection signal SEL is input from an external controller with the number of pulses generated by each element electrode in a predetermined adhesion state of the organic thin film. Thereby, the selection switches SSR, SSG, and SSB will be switched respectively, and any potential of the attached voltage V4 or the unattached voltage Vs will be output to the display driving power lines VelR, VelG, and VelB. The above-mentioned three component drive power supply lines will supply display drive power from other terminals connected to these during the display operation. In FIG. 8, according to the selection switch SSR, only the driving power line VelR is shown to be electrically connected to the attached voltage line LV 4. As a result, the potential of the pixel electrode M is selected and set according to the pixels for red (R), pixels for green (G), and pixels for blue (B) in the pixel Pχ. Therefore, each organic EL is configured. Organic thin films of the elements REL, GEL, and BEL may be formed on the pixel electrode M. The above state setting is performed simultaneously for the entire display panel chip PT shown in FIG. 7. At the stage where the voltage setting of the element electrode is ready to be completed, the substrate S is irradiated with ion beam IB to the main substrate (33) (31) (31) 200426920 to form an organic thin film. In this way, one or a plurality of the display panel wafers PT are formed on the main substrate S. In addition, the selective potential settings of the plurality of pixel electrodes M formed on the display panel wafers PT are selected based on a common reset signal line LR, a signal line LS, an attached voltage line LV4, and an unattached voltage line LVs. Each of the above display panel wafers PT is performed. Therefore, it is possible to selectively set a predetermined potential for each of the plurality of pixel electrodes M of each display panel wafer PT, so that an organic thin film can be formed on the element electrodes of the plurality of display panel wafers PT at the same time. Further, in this embodiment, a film-forming voltage setting circuit (a voltage selection circuit 60, an AND circuit 61, an OR circuit 62, and a charging circuit) is formed in a formation area of the display panel wafers PT formed on the main substrate S. Crystal 6 3) and display driving circuit (scanning line driving circuit 64 and data line driving circuit 65, element driving circuit of pixel PX). The film-forming voltage setting circuit is a part of a circuit constituting the original display panel chip PT. In addition, the plurality of day electrode M is one of the organic EL elements REL, GEL, and BEL, and the attached voltage V4 or the non-attached voltage Vs can be used as an element drive of the organic EL elements REL, GEL, and BEL. The switching transistor qsw of the circuit drives the transistor Qd to be supplied to each pixel electrode M. Therefore, the element driving circuit of the pixel ρ X does not need to be changed in order to apply a voltage to the element electrode during the formation of the organic thin film. In addition, by adding some circuits to the original circuit of the display panel wafer PΊΓ, the voltage of the element electrode can be set, and the additional circuit can be manufactured at the same time as the original circuit. -34-(32) (32) 200426920 The power supply to the film-forming voltage setting circuit and the display driving circuit when the organic thin film is formed is performed by appropriately converting the voltage with the applied voltage V4 and the unapplied voltage Vs. On the other hand, at the stage of completion of the display panel wafer PT, the state of the film-forming voltage setting circuit and the display driving circuit is performed based on the reset signal RST in a manner that power supply from the above-mentioned attached voltage V4 and non-attached voltage Vs is not possible. set up. The same applies to the reset signal RST and the selection signal SEL. After the scribe process is performed, the potential is fixed in the display panel chip PT by the pull-down resistors Rp 1 and Rp 2 in the display operation state. 5 and 8 show the case where the voltage selection circuit 60 is formed on the main substrate S, an external device may be provided in addition to the main substrate S. The materials or functional materials described in the scope of the patent application correspond to, for example, the organic material J in this embodiment. The substrate described in the patent application scope corresponds to the main substrate S in this embodiment, for example. In this embodiment, the isolation means described in the scope of the patent application corresponds to, for example, the first baffle τ1 or the second baffle T2. The film forming apparatus described in the scope of the patent application corresponds to the organic thin film forming apparatus I 0 in this embodiment. The ionization section described in the scope of the patent application corresponds to the soft ionization section 13 in this embodiment. The classification unit described in the scope of the patent application corresponds to the ion classification unit 14 in this embodiment. The quality classification unit described in the scope of the patent application corresponds to the multi-pole type sorting device 43 in this embodiment. The electronic device described in the scope of the patent application is, in this embodiment, a display panel corresponding to the main constituent elements of an organic EL display. (35) 200426920 Wafer PT. The ion-attached electrode or element electrode described in the scope of the patent application corresponds to the voltage supply unit described in the scope of the pixel application and the scope of the patent application in the present embodiment, and in the embodiment corresponds to the voltage generating device Q, for example. The detection unit described in the patent application corresponds to, for example, 5 4 in this embodiment. The display driving circuit described in the scope of the patent application is, for example, an element driving circuit corresponding to the scanning line driving circuit 64, the data line 65, or the pixel PX. The electronic device in the scope of the patent application corresponds to, for example, the display PT in this embodiment. The signal line described in the scope of the patent application corresponds to, for example, the reset signal line LR or the selection signal line LS in this embodiment. The power line described in the application range is, for example, a voltage line LV4 or no voltage is applied. Line LVs. The optoelectronic element described in the application specifically corresponds to, for example, R) organic EL element REL, green (G) organic EL element, and color (B) organic EL element BEL in this embodiment. According to the manufacturing method of the organic EL display panel and the like of the embodiment, the organic thin film forming apparatus 10 and the electronic device have the following characteristics. (1) In the above embodiment, an organic thin film β is formed, which includes a solution supply section 11, a gas supply section 12, a soft 13, an ion classification section 14, a deflection section 15, and a film formation section 16. The soft ionization unit 13 causes fine droplets of the organic material in the solution supply unit 11 to be ionized or charged, and then the droplets are gaseous pseudomolecular ions. At this moment, on the pole surface of the ion classification section, the electrode M0 is in the form of the panel wafer described in the driving circuit of the electric flow meter in this implementation range, and the patent application is in the range of attachment benefits in red (GEL or blue). Electronic device, you can set the device] 〇Ionization unit. In addition, the formation of micronization in J and formation of 14 from the pseudo-36- (34) (34) 200426920 product ions to classify the organic material ions, the orbits are consistent to generate Ion beam IB. 'The main substrate s on which the pixel electrode M is formed in advance is placed on the stage 52. In addition, the predetermined pixel electrode M is connected to the attachment voltage V4 through the electric flow meter 54. The pixel electrode μ applies the non-adherence voltage Vs ′ and induces the ion beam IB to the electric field only at the predetermined pixel electrode μ. Thereby, the organic material pseudo-molecule ions can be self-integrated only on the predetermined pixel electrode M High accuracy and uniform film thickness. Therefore, compared with the vapor deposition method using a photomask, organic materials can be improved; the efficiency of use 'can be formed even for electrode surfaces with complex shapes. Or high-quality organic thin film with little change in film thickness. Moreover, when pseudo-molecular ions of the organic material are attached to the electrode, the solvent can be removed by the ion classification section 14. Therefore, the organic film formed first will not be irradiated by later Redissolved by ion rays can form a multilayer of a quotient film. (2) In the above embodiment, an ultrasonic atomizer 30 with a strong electric field electrode is provided, which is provided with an ultrasonic vibration in the ionization chamber C 1 3, the vibrating plate electrode 32, and the Peltier element 33. In a state where the ultrasonic vibrator 31 is performing ultrasonic vibration, the solution is sprayed from the capillary NZ 1 and the fine droplets of the spray collide. On the protruding portion 32a formed on the diaphragm electrode 32. Thereby, the size (mass) of the minute droplets sprayed from the capillary NZ1 can be further miniaturized. (3) A laser oscillator is provided in the above embodiment. 34. The laser is irradiated onto the charged minute droplets sprayed from the front end Az of the capillary NZ 1 through an entrance window V provided on a side wall of the ionization chamber C1, so that the solvent in the droplets is instantly gasified. With this, the fine liquid droplets can be made more fine, and the pseudomolecules that are gasified after being vaporized can be ionized. -37- (35) (35) 200426920 (4) The above embodiment has multiple functions. The polar sorting and concentrating device 43 is constituted by connecting two first and second quadrupole mass sorting devices 43a and 43b in multiple stages. The first quadrupole mass sorting device 4 3 a is opened. Type quadrupole mass classification device, the second quadrupole mass classification device 43b forms a closed quadrupole mass classification device. The second quadrupole mass classification device 43b is connected to the second quadrupole mass classification device 43b. 4 vacuum pump P4, which operates the fourth vacuum pump P4, and uses a second quadrupole mass classification device 43b in a high vacuum state. As a result, it is possible to improve the classification performance and the collection performance of the multi-pole type classification and collection device 43. (5) In the above embodiment, the adhesion surface of the main substrate S is placed along the side wall 50 of the film forming chamber C3 toward the vertical or horizontal lower surface. This makes it difficult for dust (particles) to adhere to the adhesion surface of the main substrate S. As a result, a high-quality organic thin film can be formed on the main substrate S. (6) In the above embodiment, the pixel electrode M is electrically connected to the attachment voltage V4 via the electric flow meter 54 provided outside the film forming chamber C3 based on the switching transistor Qsw. In addition, the pseudo-molecular ions of the organic material are attached to the pixel electrode M electrically connected to the electric flow meter 54, so that a current corresponding to the amount of the pseudo-molecular ions of the organic material flows through the electric flow meter 54. By measuring the current level, it is possible to monitor whether or not an organic film having a predetermined thickness is formed on the pixel electrode M. The output signal line of the electric flow meter 54 is connected to a stage controller 53 for slidingly controlling the main substrate S. The stage controller 53 controls the main substrate S in a sliding manner in accordance with the current level measured by the electric flow meter 54. As a result, an organic thin film having excellent film thickness accuracy and film thickness uniformity can be formed. -38- (36) (36) 200426920 (7) In the above embodiment, a plurality of display panel wafers PT are formed on the main substrate S, and a signal is selected by a reset signal line LR common to each display panel wafer PT. The selective potential setting of the pixel electrodes M formed on the respective display panel wafers PT is performed by the lines LS, the attached voltage line LV4 and the non-attached voltage line LV s. Therefore, the predetermined potentials of the selectivity can be set simultaneously for the pixel electrodes M of the respective display panel wafers PT. As a result, an organic film can be formed on a plurality of display panel wafers PT on the main substrate at a time. (8) In the above embodiment, as shown in FIG. 7, the reset signal line LR, the selected signal line LS, the attached voltage line LV4 and the non-attached voltage line LV s are wired so as not to cross each other on the main substrate s. There is an intermediate field in the dicing field between the fields of the plurality of display panel wafers P T described above. Thereby, the reset signal line LR, the selected signal line LS, the attached voltage line LV 4 and the non-attached voltage line LV s can be formed on a single wiring layer. That is, without adding a new process, using the most suitable wiring layer to form the reset signal line LR in the wiring layer forming the original circuit, select the signal line LS 'the attached voltage line LV 4 and the non-attached voltage line LV s, so both reliability and cost can be taken into account. (9) In the above embodiment, a film-forming voltage setting circuit (voltage selection circuit 60, AND circuit 61 'OR circuit 62 and charging transistor 63) and a display driving circuit (scanning Line driving circuit 64 and data line driving circuit 65, element driving circuit of pixel PX). In addition, the film-forming voltage setting circuit and the display driving circuit can each use a part of a circuit element of an original optoelectronic device constituting the display panel wafer PT formed in the formation field. In particular, 39 '(37) (37) 200426920 is because the element driving circuit that occupies a large portion of the pixel area of the display panel wafer is not changed. Therefore, the organic thin film formation method of the present invention can be used to form the main substrate at one time. The number of display panel wafers will hardly decrease. That is, the cost on the circuit for applying the attachment voltage to the pixel electrode M is minimal. (Second Embodiment) Next, an electronic device manufactured by the organic thin film forming device 10 according to the first embodiment and an electronic device using the same will be described with reference to Fig. 9. As an organic thin film device implemented using the organic thin film forming device 10, for example, an organic EL display. The organic EL display can be applied to various electronic devices such as portable personal computers, mobile phones, and digital cameras. FIG. 9 is a perspective view showing a configuration of a portable personal computer. In Fig. 9, a personal computer 70 includes a main body portion 72 having a keyboard 71, and a display unit 73 using a display composed of the organic EL element. In this case, the display unit 73 may be manufactured using the organic thin film forming apparatus 10. As a result, it is possible to provide a portable personal computer 70 with a high-quality organic EL display. The embodiments of the present invention are not limited to the above-mentioned embodiments, and may be implemented as described below. 〇 In the above-mentioned first embodiment, a solvent U is prepared by solubilizing an organic material J of a material or a functional material, and the organic material j and the solvent U are mixed to solubilize the organic material j. The solubilized organic material · T forms pseudomolecular ionization. It is also possible to directly vaporize the organic material j in the ionization section without using a solvent or by the field desorption method -40-(38) (38) 200426920 (Field desorption) / field ionization method, electron impingement method, laser A soft ionization method or the like is used to charge or soft ionize the microparticles obtained by granulating another nanoparticle. Thereby, the same effect as that of the above-mentioned embodiment can be obtained. 〇 In the above-mentioned first embodiment, the multi-pole sorting and concentrating device 43 is provided, which is connected to the two first and second quadrupole mass classification devices 43a and 43b in multiple stages, and the quadrupole mass classification of each stage is performed. The quadrupoles of the device are connected in parallel horizontally. This allows a large number of ions to be sorted simultaneously, resulting in longer ionizing rays. The multi-pole type sorting and condensing device 43 may be constituted by one quadrupole type mass sorting device. Thereby, the manufacturing cost of the organic thin film forming apparatus 10 can be reduced. In the above embodiment, the thin film is formed on the hard substrate of the glass substrate GS, but it is not limited to this. The thin film may also be formed on a substrate made of a flexible material such as a plastic or composite film or a metal plate. In this case, a stage slide device for rolling the substrate into a roll shape may be provided. Thereby, an organic thin film can be efficiently formed continuously. 〇 In the first embodiment described above, although only one injection nozzle of the soft ionization section I 3 is shown, a plurality of injection nozzles may be prepared, and the main substrates are placed in the film forming section 16 in different states. Organic materials are laminated to form a film. Thereby, a fine laminated structure can be formed. Of course, in this case, it is necessary to appropriately switch the control conditions of the ionization section 14 and the deflection section 15 according to the organic material, or to add a solution supply section 11 and a gas supply section 12. 〇 In the first embodiment described above, although pseudo-molecular ions are used as negative pseudo-molecular ions, in the case of positive pseudo-molecular ions, the potential relationship applied to each electrode can be set to be completely the same as that in the first embodiment. Instead, a film forming apparatus is formed. -41-(39) (39) 200426920 0 In the above-mentioned first embodiment, although it is a film forming apparatus for manufacturing an organic EL display panel, in addition to the organic EL display panel, for example, it may include an organic TFT or an organic battery. Film forming devices such as organic memory elements, multilayer organic thin film package structures, or color filters and light receiving and emitting devices for optical communications. In this case, the organic material is not directly attached to the electrode, but the organic material can be attached to the electrode through a thin insulation layer. In the above-mentioned first embodiment, the film forming apparatus for forming an organic thin film is used, but it may be a film forming apparatus for forming an inorganic thin film. That is, it may be a film-forming apparatus in the form of a combination of an inorganic thin film or a vacuum-depositable low-molecular organic film and a high-molecular organic thin film. [Brief Description of the Drawings] FIG. 1 is a block configuration diagram for explaining the structure of the organic thin film forming apparatus of this embodiment. FIG. 2 is a diagram showing the configuration of an organic thin film forming apparatus according to this embodiment. FIG. 3 (a) is a front view showing a second quadrupole type mass classification device. (B) is a second quadrupole type mass classification device. Section view. Fig. 4 (a) is a front view showing a first quadrupole type mass classification device '(b) is a sectional view showing a first quadrupole type mass classification device; 5 (a), (b) and (c) are cross-sectional views showing an organic EL display panel formed by an organic thin film forming apparatus. 6 (a), (b) and (c) are cross-sectional views showing an organic EL display panel formed by an organic thin film forming apparatus. -42- (40) (40) 200426920 Fig. 7 is a plan view showing the relationship between the wires when a plurality of display panel wafers are formed on the main substrate at one time. FIG. 8 is a diagram for explaining the electrical connection between the film-forming voltage setting circuit and the display driving circuit of the display panel chip. FIG. 9 is a diagram for explaining the second embodiment. [Description of main component symbols] J ... Organic material LR as material or functional material ... Reset signal line LS as signal line ... Selection signal line LV4 as signal line ... Adhesive voltage line LV s as power line ... The voltage line PT is not attached ... The display panel wafer Q as an electronic device ... the voltage generating device S as a voltage supply unit ... the main substrate T1'T2 as a substrate ... the second and second shields 10 as isolation means ... Organic thin film forming device 11 as a film forming device ... Solution supply section 12 ... Gas supply section 1 3 ... Soft ionization section 1 4 as ionization section ... Ion classification section 15 as classification section ... Deviation section 16 ... Film formation 43. A multi-pole sorting and beam-receiving device serving as a quality classification unit 45 ... an adjustment electrode -43- (41) (41) 200426920 5 4 ... the current weight of the detection unit is g 7 7 0 ... Portable Personal Computer With Electronic Device -44-

Claims (1)

200426920 ⑴ Pickup, patent application scope 1 · A film formation method, comprising: a step of converting a material into a gaseous pseudomolecular ion; and setting the potentials of a plurality of electrodes provided on a substrate to a predetermined potential The step of selectively attaching the pseudomolecular ions to the substrate. 2-A method for manufacturing an electronic device, which is a method for manufacturing an electronic device formed by laminating a functional material on a substrate into a thin film, and comprising: forming a solution containing a functional material into fine droplets; and The first step of 'gasifying the droplet to generate a pseudo-molecular ion after gasification or charging; the second step of reducing the content of the solvent ion from the solvent contained in the solution by the pseudo-molecular ion. And a plurality of electrodes are provided on the substrate, and a predetermined electrode potential of the electrode is selectively set to different potentials for the pseudomolecular ions, so that the pseudomolecular ions of the functional material are selectively attached to the substrate On step 3. 3. The method for manufacturing an electronic device according to item 2 of the scope of patent application, wherein it is further provided: after classifying the solvent ions from the pseudomolecular ions and the functional material ions from the functional material, the functional material ions are biased to move Step 4. 4 · The method for manufacturing an electronic device according to item 2 or 3 of the scope of the patent application, wherein a plurality of the electronic devices are formed on the substrate, and a selective potential of the plurality of electrodes formed by the electronic devices is set to -45. -(2) (2) 200426920 is based on the common signal line and power line for each of the above electronic devices. 5. The method for manufacturing an electronic device according to item 4 of the scope of patent application, wherein the signal lines and the power supply lines common to the electronic devices formed on the substrate are wired so as not to be formed on the substrate. Intermediate areas between the aforementioned electronic devices intersect each other. 6 · The manufacturing method of an electronic device according to item 2 or 3 of the scope of the patent application, wherein in the formation field of the above-mentioned electronic device formed on the substrate, a method for selectively setting the plurality of electrodes to a predetermined potential is formed. The setting circuit uses at least a part of an original electronic circuit of the electronic device formed in the above-mentioned formation area. 7 · The method for manufacturing an electronic device according to item 6 of the patent application, wherein the electronic devices in the respective formation fields formed on the substrate are optoelectronic devices, and the plurality of electrodes are formed of a plurality of optoelectronic elements formed in the optoelectronic device The element electrode is an electronic circuit used in the setting circuit, and includes an element driving circuit of the photoelectric element. 8 · —A kind of film forming device is a film forming device for forming a film of a material on a substrate, and is characterized by comprising: an ionization unit that forms fine droplets of the material or a solution of the material, and ionizes After being electrified or charged, the droplets are gasified to generate gaseous pseudo-molecular ions. The voltage supply unit is configured to supply a signal or voltage to an electronic circuit that selectively sets the substrate for the pseudo-molecular ions. The potentials of the plurality of electrodes provided on the substrate; and a film forming unit for attaching the material ions in the pseudomolecular ions to the substrate described in -46-(3) (3) 200426920. 9 · The film forming apparatus according to item 8 of the scope of patent application, which includes a solution supply unit for supplying a solution obtained by mixing the materials and a solvent to the ionization unit; and a gas supply unit which is simultaneously operated by a nozzle. The solution and the inert gas are sprayed to form minute droplets of the solution; and a classification unit that vaporizes the minute droplets to generate gaseous pseudomolecular ions, and classifies the pseudomolecular ions from the above. The ions of the material and the ions from the solvent. 1 〇 If the film forming apparatus of the 9th patent application scope further includes a deflection section, the ions from the above-mentioned materials classified by the classification section are biased to move. 1 1 · The film forming apparatus according to item 9 of the scope of patent application, wherein the classification unit is provided with a mass classification unit which is provided with a plurality of ions for classifying the ions from the material according to the mass according to the applied voltage or current. electrode. 1 2 · The film forming apparatus according to item 11 of the patent application range, wherein the quality classification unit includes a plurality of quality classification units having different distances between the plurality of electrodes. 1 3 · The film formation device described in any one of the 8th to 12th paragraphs of the patent application § 靑, which further includes an adjustment electrode, which is provided with a collector electrode, and the collector electrode and the above The flying speed of the ions from the material is adjusted between the film forming portions. 1 4 · As described in any one of items 8 to 12 of the scope of patent application -47- (4) (4) 200426920 The film forming apparatus includes: · Detects that ions from the material are attached to the substrate The detection part of the predetermined electrode adhesion amount. 1 5 · The film forming apparatus according to any one of the items 8 to i in the scope of the patent application, wherein the ion-adhered electrode surface of the substrate is arranged to slide vertically or horizontally. 1 6 · The film forming apparatus described in any one of the items 8 to 12 of the scope of the patent application, wherein the ionization unit, the classification unit, and the film formation unit are provided with isolation for reducing pressure independently of each other. means. 1 7 · An electronic device characterized in that it is manufactured by the method for manufacturing an electronic device described in any one of claims 2 to 6 of the scope of patent application. 1 8 · An electronic device characterized by having the electronic device described in item 17 of the scope of patent application. 1 9 · An electronic device characterized in that it is manufactured using the film forming device described in any one of claims 8 to 16. -48-