JP3036436B2 - Method of manufacturing active matrix type organic EL display - Google Patents

Method of manufacturing active matrix type organic EL display

Info

Publication number
JP3036436B2
JP3036436B2 JP8158671A JP15867196A JP3036436B2 JP 3036436 B2 JP3036436 B2 JP 3036436B2 JP 8158671 A JP8158671 A JP 8158671A JP 15867196 A JP15867196 A JP 15867196A JP 3036436 B2 JP3036436 B2 JP 3036436B2
Authority
JP
Japan
Prior art keywords
emitting layer
organic light
light emitting
organic
active matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8158671A
Other languages
Japanese (ja)
Other versions
JPH1012377A (en
Inventor
達也 下田
悟 宮下
浩史 木口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15676827&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3036436(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP8158671A priority Critical patent/JP3036436B2/en
Publication of JPH1012377A publication Critical patent/JPH1012377A/en
Application granted granted Critical
Publication of JP3036436B2 publication Critical patent/JP3036436B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114Poly-phenylenevinylene; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
    • H10K2102/3026Top emission
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Ink Jet (AREA)
  • Electroluminescent Light Sources (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、薄膜トランジスタ
を用いたアクティブマトリックス型のEL表示体のイン
クジェット方式を用いた製造方法に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to a method of manufacturing an active matrix type EL display using thin film transistors using an ink jet system.

【0002】[0002]

【従来の技術】有機EL素子は、蛍光性有機化合物を含
む薄膜を、陰極と陽極とで挟んだ構成を有し、前記薄膜
に電子および正孔(ホール)を注入して再結合させるこ
とにより励起子(エキシトン)を生成させ、このエキシ
トンが失活する際の光の放出(蛍光・燐光)を利用して
発光させる素子である。
2. Description of the Related Art An organic EL device has a structure in which a thin film containing a fluorescent organic compound is sandwiched between a cathode and an anode. Electrons and holes are injected into the thin film and recombined. This is an element that generates excitons and emits light by utilizing light emission (fluorescence / phosphorescence) when the excitons are deactivated.

【0003】この有機EL素子の特徴は、10V以下の
低電圧で100〜100000 cd/m2 程度の高輝度の
面発光が可能であり、また蛍光物質の種類を選択するこ
とにより青色から赤色までの発光が可能なことである。
[0003] The features of this organic EL device are that it can emit a high-intensity surface light of about 100 to 100000 cd / m2 at a low voltage of 10 V or less, and can change the color from blue to red by selecting the type of fluorescent substance. Light emission is possible.

【0004】有機EL素子は、安価な大面積フルカラー
表示素子を実現するものとして注目を集めている(電子
情報通信学会技術報告、第89巻、NO.106、49
ページ、1989年)。報告によると、強い蛍光を発す
る有機色素を発光層に使用し、青、緑、赤色の明るい発
光を得ている。これは、薄膜状で強い蛍光を発し、ピン
ホール欠陥の少ない有機色素を用いたことで、高輝度な
フルカラー表示を実現できたと考えられている。
[0004] Organic EL elements have attracted attention as realizing inexpensive large-area full-color display elements (IEICE Technical Report, Vol. 89, Nos. 106, 49).
1989). According to reports, organic dyes that emit strong fluorescence are used in the light-emitting layer, and bright blue, green, and red light is emitted. It is thought that a high-luminance full-color display could be realized by using an organic dye which emits strong fluorescence in a thin film state and has few pinhole defects.

【0005】更に特開平5−78655号公報には、有
機発光層の成分が有機電荷材料と有機発光材料の混合物
からなる薄膜層を設け、濃度消光を防止して発光材料の
選択幅を広げ、高輝度なフルカラー素子とする旨が提案
されている。
Further, Japanese Patent Application Laid-Open No. 5-78655 discloses a thin film layer in which the components of the organic light emitting layer are composed of a mixture of an organic charge material and an organic light emitting material. It has been proposed to use a high-luminance full-color element.

【0006】しかし、いずれの報告にも、実際のフルカ
ラー表示パネルの構成や製造方法については言及されて
いない。
[0006] However, none of the reports mentions the actual configuration or manufacturing method of a full-color display panel.

【0007】[0007]

【発明が解決しようとする課題】前述の有機色素を用い
た有機薄膜EL素子は、青、緑、赤の発光を示す。しか
し、よく知られているように、フルカラー表示体を実現
するためには、3原色を発光する有機発光層を画素毎に
配置する必要がある。従来、有機発光層をパターニング
する技術は非常に困難とされていた。原因は、一つは反
射電極材の金属表面が不安定であり、蒸着のパターニン
グ精度が出ないという点である。2つめは、正孔注入層
および有機発光層を形成するポリマーや前駆体がフォト
リソグラフィー等のパターニング工程に対して耐性が無
いという点である。
The organic thin film EL device using the above-mentioned organic dye emits blue, green and red light. However, as is well known, in order to realize a full-color display, it is necessary to arrange an organic light-emitting layer for emitting three primary colors for each pixel. Conventionally, a technique for patterning an organic light emitting layer has been extremely difficult. One of the causes is that the metal surface of the reflective electrode material is unstable, and the patterning accuracy of vapor deposition is not high. Second, polymers and precursors forming the hole injection layer and the organic light emitting layer are not resistant to a patterning step such as photolithography.

【0008】本発明は、上述したような課題を解決する
ものであり、その目的は、有機発光層をインクジェット
方式により画素毎にパターニングしたアクティブマトリ
ックス型EL表示体の製造方法を提供することにある。
An object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide a method of manufacturing an active matrix type EL display in which an organic light emitting layer is patterned for each pixel by an ink jet method. .

【0009】[0009]

【課題を解決するための手段】本発明に関わるアクティ
ブマトリックス型有機EL表示体の製造方法は、薄膜ト
ランジスタを有するガラス基板に形成された透明画素電
極上層に正孔注入層が形成され、この上層に少なくとも
各画素毎に赤、緑、青より選択された発光色を有する有
機発光層(特にポリマーまたはその前駆体よりなる発光
材料で構成された有機発光層)が形成され、更にこの上
層に反射電極が形成されるアクティブマトリックス型有
機EL表示体の製造方法において、前記有機発光層をそ
の形状および配列が最終パターンとなるようインクジェ
ット方式により形成することを特徴とする。また、薄膜
トランジスタを有するガラス基板に形成された透明画素
電極上層に少なくとも各画素毎に赤、緑、青より選択さ
れた発光色を有する有機発光層が形成され、更にこの上
層に反射電極が形成されるアクティブマトリックス型有
機EL表示体の製造方法において、前記有機発光層をそ
の形状および配列が最終パターンとなるようインクジェ
ット方式により形成することを特徴とする。
According to a method of manufacturing an active matrix type organic EL display device according to the present invention, a hole injection layer is formed on a transparent pixel electrode formed on a glass substrate having a thin film transistor. An organic light emitting layer having a light emitting color selected from at least red, green, and blue (particularly, an organic light emitting layer made of a light emitting material made of a polymer or a precursor thereof) is formed for each pixel. Wherein the organic light-emitting layer is formed by an ink-jet method so that the shape and arrangement thereof become the final pattern. An organic light emitting layer having a light emission color selected from red, green, and blue is formed at least for each pixel on an upper layer of a transparent pixel electrode formed on a glass substrate having a thin film transistor, and a reflective electrode is formed on this upper layer. In the method of manufacturing an active matrix type organic EL display device, the organic light emitting layer is formed by an ink jet method so that its shape and arrangement become a final pattern.

【0010】更に、薄膜トランジスタを有するガラス基
板に形成された反射画素電極上層に少なくとも各画素毎
に赤、緑、青より選択された発光色を有する有機発光層
が形成され、この上層に正孔注入層が形成され、更にこ
の上層に透明電極が形成されるアクティブマトリックス
型有機EL表示体の製造方法において、前記有機発光層
をその形状および配列が最終パターンとなるようインク
ジェット方式により形成することを特徴とし、また、薄
膜トランジスタを有するガラス基板に形成された反射画
素電極上層に少なくとも各画素毎に赤、緑、青より選択
された発光色を有する有機発光層が形成され、更にこの
上層に透明電極が形成されるアクティブマトリックス型
有機EL表示体の製造方法において、前記有機発光層を
その形状および配列が最終パターンとなるようインクジ
ェット方式により形成することを特徴とする。
Further, an organic light emitting layer having a luminescent color selected from red, green and blue is formed at least for each pixel on an upper layer of the reflective pixel electrode formed on the glass substrate having the thin film transistor. A method for producing an active matrix type organic EL display, in which a layer is formed and a transparent electrode is further formed on the layer, wherein the organic light emitting layer is formed by an ink jet method so that its shape and arrangement become a final pattern. In addition, at least an organic light emitting layer having a light emission color selected from red, green, and blue is formed for each pixel on an upper layer of a reflective pixel electrode formed on a glass substrate having a thin film transistor, and a transparent electrode is further formed on this upper layer. In a method of manufacturing an active matrix type organic EL display to be formed, the organic light emitting layer is formed in a shape and arrangement. There and forming by an inkjet method to a final pattern.

【0011】本発明は、要するに図3に示すように、基
板上に形成された信号線301、ゲート線302、画素
電極303および薄膜トランジスタ304上に、インク
ジェット法により、赤、緑、青色の有機発光材料をパタ
ーニング塗布することで、フルカラー表示を実現するも
のである。
According to the present invention, as shown in FIG. 3, the red, green and blue organic light-emitting devices are formed on a signal line 301, a gate line 302, a pixel electrode 303 and a thin film transistor 304 formed on a substrate by an ink-jet method. Full-color display is realized by patterning and applying a material.

【0012】[0012]

【発明の実施の形態】以下、本発明の好適な実施形態に
ついて図面を参照して説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.

【0013】(実施例1)図1に示すように、ガラス基
板101上に薄膜トランジスタ102を形成してから、
ITO透明画素電極103を形成する。
(Embodiment 1) As shown in FIG. 1, after forming a thin film transistor 102 on a glass substrate 101,
An ITO transparent pixel electrode 103 is formed.

【0014】正孔注入材料としてポリマー前駆体である
ポリテトラヒドロチオフェニルフェニレンをコーティン
グする。加熱により、前駆体はポリフェニレンビニレン
となり、厚さ0.05ミクロンの正孔注入層104が形
成される。
As a hole injection material, polytetrahydrothiophenylphenylene, which is a polymer precursor, is coated. By heating, the precursor becomes polyphenylene vinylene, and the hole injection layer 104 having a thickness of 0.05 μm is formed.

【0015】次に、インクジェットプリント装置105
により赤、緑、青色を発色する発光材料をパターニング
塗布し、厚さ0.05ミクロンの発色層106、10
7、108を形成する。赤色発光材料にはシアノポリフ
ェニレンビニレン、緑色発光材料にはポリフェニレンビ
ニレン、青色発光材料にはポリフェニレンビニレンおよ
びポリアルキルフェニレンを使用する。これらの有機E
L材料はケンブリッジ・ディスプレイ・テクノロジー社
製であり、液状で入手可能である。
Next, the ink jet printing apparatus 105
A luminescent material that emits red, green, and blue light is patterned and applied, and a 0.05 μm thick color-forming layer 106, 10
7 and 108 are formed. Cyanopolyphenylene vinylene is used for the red light emitting material, polyphenylene vinylene is used for the green light emitting material, and polyphenylene vinylene and polyalkylphenylene are used for the blue light emitting material. These organic E
The L material is manufactured by Cambridge Display Technology and is available in liquid form.

【0016】最後に、厚さ0.1〜0.2ミクロンのM
gAg反射電極109を蒸着法により形成する。
Finally, M having a thickness of 0.1 to 0.2 micron
The gAg reflective electrode 109 is formed by an evaporation method.

【0017】これにより、直視型のフルカラー有機EL
表示体が完成する。
Thus, a direct-view type full-color organic EL is provided.
The display is completed.

【0018】(実施例2)図2に示すように、ガラス基
板201上に薄膜トランジスタ202を形成してから、
AlLi反射画素電極203を形成する。
Embodiment 2 As shown in FIG. 2, after forming a thin film transistor 202 on a glass substrate 201,
An AlLi reflective pixel electrode 203 is formed.

【0019】次に、インクジェットプリント装置207
により赤、緑、青色を発色する発光材料をパターニング
塗布し、発色層204、205、206を形成する。赤
色発光材料にはシアノポリフェニレンビニレン、緑色発
光材料にはポリフェニレンビニレン、青色発光材料には
ポリフェニレンビニレンおよびポリアルキルフェニレン
を使用する。これらの有機EL材料はケンブリッジ・デ
ィスプレイ・テクノロジー社製であり、液状で入手可能
である。
Next, the ink jet printing apparatus 207
A luminescent material that emits red, green, and blue light is applied by patterning to form coloring layers 204, 205, and 206. Cyanopolyphenylene vinylene is used for the red light emitting material, polyphenylene vinylene is used for the green light emitting material, and polyphenylene vinylene and polyalkylphenylene are used for the blue light emitting material. These organic EL materials are manufactured by Cambridge Display Technology, and are available in liquid form.

【0020】正孔注入材料としてポリマー前駆体である
ポリテトラヒドロチオフェニルフェニレンをキャスト法
により形成する。加熱により、前駆体はポリフェニレン
ビニレンとなり、正孔注入層208が形成される。
A polymer precursor, polytetrahydrothiophenylphenylene, is formed as a hole injection material by a casting method. By heating, the precursor becomes polyphenylene vinylene, and the hole injection layer 208 is formed.

【0021】最後に、ITO透明電極209を蒸着法に
より形成する。
Finally, an ITO transparent electrode 209 is formed by a vapor deposition method.

【0022】これにより、反射型のフルカラー有機EL
表示体が完成する。
Thus, a reflection type full-color organic EL is provided.
The display is completed.

【0023】(実施例3)有機発光層の有機発光材料と
して2,3,6,7-テトラヒドロ-11-オキソ−1H,5H,11H-(1)
ベンゾピラノ[6,7,8-ij]-キノリジン-10-カルボン酸を
用い、有機正孔注入層材料として1,1-ビス-(4-N,N-ジト
リルアミノフェニル)シクロヘキサンを用い、両者を混
合することで緑色の発光材料とする。
Example 3 2,3,6,7-Tetrahydro-11-oxo-1H, 5H, 11H- (1) as an organic light emitting material of an organic light emitting layer
Using benzopyrano [6,7,8-ij] -quinolidine-10-carboxylic acid and 1,1-bis- (4-N, N-ditolylaminophenyl) cyclohexane as an organic hole injection layer material, To form a green light-emitting material.

【0024】同様に、赤色の有機発光材料として、2-1
3',4'-ジヒドロキシフェニル)-3,5,7-トリヒドロキシ-1
-ベンゾピリリウムパークロレートを用いて正孔注入層
材料と混合する。
Similarly, as a red organic light emitting material, 2-1
(3 ', 4'-dihydroxyphenyl) -3,5,7-trihydroxy-1
-Mix with hole injection layer material using benzopyrylium perchlorate.

【0025】更に、青色発光層には有機正孔注入材料と
してトリス(8-ヒドロキシキノリノール)アルミニウムを
用い、有機発光材料として、2,3,6,7-テトラヒドロ-9-
メチル-11-オキソ-1H,5H,11H-(1)ベンゾピラノ[6,7,8-i
j]-キノリジンを混合し、発光材料を作成する。
Further, for the blue light emitting layer, tris (8-hydroxyquinolinol) aluminum is used as an organic hole injecting material, and 2,3,6,7-tetrahydro-9- is used as an organic light emitting material.
Methyl-11-oxo-1H, 5H, 11H- (1) benzopyrano [6,7,8-i
j] -Quinolidine is mixed to produce a luminescent material.

【0026】実施例1または実施例2と同様な工程で、
各々の発光層をインクジェットプリンタ装置により局所
パターニングし、アクティブマトリックス型有機EL表
示体を作成する。
In the same process as in Example 1 or 2,
Each light-emitting layer is locally patterned by an ink-jet printer to form an active matrix type organic EL display.

【0027】なお、本実施例で使用した有機EL材料以
外にも、アロマティックジアミン誘導体(TDP)、オ
キシジアゾールダイマー(OXD)、オキシジアゾール
誘導体(PBD)、ジスチルアリーレン誘導体(DS
A)、キノリノール系金属錯体、ベリリウム−ベンゾキ
ノリノール錯体(Bebq)、トリフェニルアミン誘導
体(MTDATA)、ジスチリル誘導体、ピラゾリンダ
イマー、ルブレン、キナクリドン、トリアゾール誘導
体、ポリフェニレン、ポリアルキルフルオレン、ポリア
ルキルチオフェン、アゾメチン亜鉛錯体、ポリフィリン
亜鉛錯体、ベンゾオキサゾール亜鉛錯体、フェナントロ
リンユウロピウム錯体が使用できるが、これに限られる
物ではない。
Note that, in addition to the organic EL materials used in this example, aromatic diamine derivatives (TDP), oxydiazole dimers (OXD), oxydiazole derivatives (PBD), distyrarylene derivatives (DS)
A), quinolinol-based metal complex, beryllium-benzoquinolinol complex (Bebq), triphenylamine derivative (MTDATA), distyryl derivative, pyrazoline dimer, rubrene, quinacridone, triazole derivative, polyphenylene, polyalkylfluorene, polyalkylthiophene, azomethine A zinc complex, a porphyrin zinc complex, a benzoxazole zinc complex, and a phenanthroline europium complex can be used, but are not limited thereto.

【0028】[0028]

【発明の効果】従来、パターニングができないとされた
有機EL材料をインクジェット方式により形成および配
列することでパターニングが可能となり、フルカラー表
示のアクティブマトリックス型有機EL表示体を実現し
た。これにより、安価で大画面のフルカラー表示体が製
造可能となり、効果は大である。
According to the present invention, patterning is possible by forming and arranging an organic EL material which cannot be patterned by an ink jet method, thereby realizing an active matrix type organic EL display of full color display. As a result, an inexpensive large-screen full-color display can be manufactured, and the effect is great.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施形態におけるアクティブマ
トリックス型有機EL表示体の工程を示す図である。
FIG. 1 is a view showing a process of an active matrix type organic EL display according to a first embodiment of the present invention.

【図2】本発明の第2の実施形態におけるアクティブマ
トリックス型有機EL表示体の工程を示す図である。
FIG. 2 is a view showing a process of an active matrix type organic EL display according to a second embodiment of the present invention.

【図3】本発明の薄膜トランジスタ上にインクジェット
法により形成された発色層を示す図である。
FIG. 3 is a diagram showing a color forming layer formed on a thin film transistor of the present invention by an ink-jet method.

【符号の説明】[Explanation of symbols]

101 ガラス基板 102 薄膜トランジスタ 103 透明画素電極 104 正孔注入層 105 インクジェットプリンタヘッド 106 有機発光層(第1色) 107 有機発光層(第2色) 108 有機発光層(第3色) 109 反射電極 201 ガラス基板 202 薄膜トランジスタ 203 反射画素電極 204 有機発光層(第1色) 205 有機発光層(第2色) 206 有機発光層(第3色) 207 インクジェットプリンタヘッド 208 正孔注入層 209 透明電極 301 信号線 302 ゲート線 303 画素電極 304 薄膜トランジスタ 305 有機発光層(第1色) 306 有機発光層(第2色) 307 有機発光層(第3色) DESCRIPTION OF SYMBOLS 101 Glass substrate 102 Thin film transistor 103 Transparent pixel electrode 104 Hole injection layer 105 Inkjet printer head 106 Organic light emitting layer (1st color) 107 Organic light emitting layer (2nd color) 108 Organic light emitting layer (3rd color) 109 Reflective electrode 201 Glass Substrate 202 Thin film transistor 203 Reflective pixel electrode 204 Organic light emitting layer (first color) 205 Organic light emitting layer (second color) 206 Organic light emitting layer (third color) 207 Inkjet printer head 208 Hole injection layer 209 Transparent electrode 301 Signal line 302 Gate line 303 Pixel electrode 304 Thin film transistor 305 Organic light emitting layer (first color) 306 Organic light emitting layer (second color) 307 Organic light emitting layer (third color)

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平7−235378(JP,A) 特開 平11−16679(JP,A) 特開 昭63−235901(JP,A) 特開 平4−121702(JP,A) (58)調査した分野(Int.Cl.7,DB名) H05B 33/00 - 33/28 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-7-235378 (JP, A) JP-A-11-16679 (JP, A) JP-A-63-235901 (JP, A) JP-A-4- 121702 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H05B 33/00-33/28

Claims (9)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 薄膜トランジスタを有するガラス基板に
形成された透明画素電極上層に正孔注入層が形成され、
この上層に少なくとも各画素毎に赤、緑、青より選択さ
れた発光色を有する有機発光層が形成され、更にこの上
層に反射電極が形成されるアクティブマトリックス型有
機EL表示体の製造方法において、前記有機発光層をそ
の形状および配列が最終パターンとなるようインクジェ
ット方式により形成することを特徴とするアクティブマ
トリックス型有機EL表示体の製造方法。
A hole injection layer formed on a transparent pixel electrode formed on a glass substrate having a thin film transistor;
An organic light emitting layer having an emission color selected from at least red, green, and blue for each pixel is formed in the upper layer, and a reflective electrode is formed in the upper layer. A method of manufacturing an active matrix type organic EL display, wherein the organic light emitting layer is formed by an ink jet method so that its shape and arrangement become a final pattern.
【請求項2】 薄膜トランジスタを有するガラス基板に
形成された透明画素電極上層に少なくとも各画素毎に
赤、緑、青より選択された発光色を有する有機発光層が
形成され、更にこの上層に反射電極が形成されるアクテ
ィブマトリックス型有機EL表示体の製造方法におい
て、前記有機発光層をその形状および配列が最終パター
ンとなるようインクジェット方式により形成することを
特徴とするアクティブマトリックス型有機EL表示体の
製造方法。
2. An organic light emitting layer having an emission color selected from red, green, and blue is formed at least for each pixel on an upper layer of a transparent pixel electrode formed on a glass substrate having a thin film transistor. Wherein the organic light-emitting layer is formed by an ink-jet method so that the shape and arrangement of the organic light-emitting layer become a final pattern. Method.
【請求項3】 薄膜トランジスタを有するガラス基板に
形成された反射画素電極上層に少なくとも各画素毎に
赤、緑、青より選択された発光色を有する有機発光層が
形成され、この上層に正孔注入層が形成され、更にこの
上層に透明電極が形成されるアクティブマトリックス型
有機EL表示体の製造方法において、前記有機発光層を
その形状および配列が最終パターンとなるようインクジ
ェット方式により形成することを特徴とするアクティブ
マトリックス型有機EL表示体の製造方法。
3. An organic light emitting layer having a light emission color selected from red, green and blue is formed at least for each pixel on an upper layer of a reflective pixel electrode formed on a glass substrate having a thin film transistor, and holes are injected into the upper layer. In a method for manufacturing an active matrix type organic EL display in which a layer is formed and a transparent electrode is further formed on the layer, the organic light emitting layer is formed by an ink jet method so that its shape and arrangement become a final pattern. Of manufacturing an active matrix type organic EL display body.
【請求項4】 薄膜トランジスタを有するガラス基板に
形成された反射画素電極上層に少なくとも各画素毎に
赤、緑、青より選択された発光色を有する有機発光層が
形成され、更にこの上層に透明電極が形成されるアクテ
ィブマトリックス型有機EL表示体の製造方法におい
て、前記有機発光層をその形状および配列が最終パター
ンとなるようインクジェット方式により形成することを
特徴とするアクティブマトリックス型有機EL表示体の
製造方法。
4. An organic light emitting layer having an emission color selected from red, green and blue is formed at least for each pixel on an upper layer of a reflection pixel electrode formed on a glass substrate having a thin film transistor, and a transparent electrode is further formed on this upper layer. Wherein the organic light-emitting layer is formed by an ink-jet method so that the shape and arrangement of the organic light-emitting layer become a final pattern. Method.
【請求項5】 前記インクジェット方式でポリマーまた
はその前駆体を供給して、前記有機発光層を形成する請
求項1ないし4のいずれかに記載のアクティブマトリッ
クス型有機EL表示体の製造方法。
5. The method of manufacturing an active matrix organic EL display according to claim 1, wherein the organic light emitting layer is formed by supplying a polymer or a precursor thereof by the ink jet method.
【請求項6】 シアノポリフェニレンビニレンにより、
赤色の発光色を有する前記有機発光層を形成する請求項
1ないし5のいずれかに記載のアクティブマトリックス
型有機EL表示体の製造方法。
6. The method according to claim 6, wherein the cyanopolyphenylene vinylene is
The method of manufacturing an active matrix type organic EL display according to any one of claims 1 to 5, wherein the organic light emitting layer having a red light emission color is formed.
【請求項7】 ポリフェニレンビニレンにより、緑色の
発光色を有する前記有機発光層を形成する請求項1ない
し6のいずれかに記載のアクティブマトリックス型有機
EL表示体の製造方法。
7. The method of manufacturing an active matrix organic EL display according to claim 1, wherein the organic light emitting layer having a green light emission color is formed of polyphenylene vinylene.
【請求項8】 ポリフェニレンビニレンおよびポリアル
キルフェニレンにより、青色の発光色を有する前記有機
発光層を形成する請求項1ないし7のいずれかに記載の
アクティブマトリックス型有機EL表示体の製造方法。
8. The method for producing an active matrix type organic EL display according to claim 1, wherein said organic light emitting layer having a blue light emission color is formed of polyphenylene vinylene and polyalkylphenylene.
【請求項9】 前記有機発光層をポリアルキルフルオレ
ンで構成する請求項1ないし8のいずれかに記載のアク
ティブマトリックス型有機EL表示体の製造方法。
9. The method for producing an active matrix type organic EL display according to claim 1, wherein said organic light emitting layer is made of polyalkylfluorene.
JP8158671A 1996-06-19 1996-06-19 Method of manufacturing active matrix type organic EL display Expired - Lifetime JP3036436B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8158671A JP3036436B2 (en) 1996-06-19 1996-06-19 Method of manufacturing active matrix type organic EL display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8158671A JP3036436B2 (en) 1996-06-19 1996-06-19 Method of manufacturing active matrix type organic EL display

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP11323845A Division JP2000123975A (en) 1999-11-15 1999-11-15 Active matrix type organic el display body

Publications (2)

Publication Number Publication Date
JPH1012377A JPH1012377A (en) 1998-01-16
JP3036436B2 true JP3036436B2 (en) 2000-04-24

Family

ID=15676827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8158671A Expired - Lifetime JP3036436B2 (en) 1996-06-19 1996-06-19 Method of manufacturing active matrix type organic EL display

Country Status (1)

Country Link
JP (1) JP3036436B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7399497B2 (en) 2003-04-15 2008-07-15 Seiko Epson Corporation Method for forming film, method of manufacturing electronic device, film forming system, electronic device, and electronic apparatus
US8995022B1 (en) 2013-12-12 2015-03-31 Kateeva, Inc. Ink-based layer fabrication using halftoning to control thickness
US9010899B2 (en) 2012-12-27 2015-04-21 Kateeva, Inc. Techniques for print ink volume control to deposit fluids within precise tolerances
US9352561B2 (en) 2012-12-27 2016-05-31 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US9700908B2 (en) 2012-12-27 2017-07-11 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US9832428B2 (en) 2012-12-27 2017-11-28 Kateeva, Inc. Fast measurement of droplet parameters in industrial printing system
US11141752B2 (en) 2012-12-27 2021-10-12 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US11673155B2 (en) 2012-12-27 2023-06-13 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy

Families Citing this family (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3899566B2 (en) 1996-11-25 2007-03-28 セイコーエプソン株式会社 Manufacturing method of organic EL display device
TW578130B (en) 1997-02-17 2004-03-01 Seiko Epson Corp Display unit
JP3803342B2 (en) * 1997-08-21 2006-08-02 セイコーエプソン株式会社 Method for forming organic semiconductor film and method for manufacturing active matrix substrate
JP2004031363A (en) * 1997-09-02 2004-01-29 Seiko Epson Corp Composition for hole injection transporting layer, organic el element and its manufacturing method
JP2000106278A (en) * 1997-09-02 2000-04-11 Seiko Epson Corp Manufacture of organic el element and the organic el element
EP1372195B8 (en) * 1997-09-02 2012-05-02 Seiko Epson Corporation Manufacturing process for an organic electroluminescent element
JP3807621B2 (en) * 1997-09-02 2006-08-09 セイコーエプソン株式会社 Manufacturing method of organic EL element
JP2004111367A (en) * 1997-09-02 2004-04-08 Seiko Epson Corp Hole injection transport layer composition, organic el element and manufacturing method thereof
JP2004031360A (en) * 1997-09-02 2004-01-29 Seiko Epson Corp Composition for hole injection transporting layer, organic el element and its manufacturing method
JP2004055555A (en) * 1997-09-02 2004-02-19 Seiko Epson Corp Composition for hole injection transport layer, organic el element, and manufacturing method
JP2004031362A (en) * 1997-09-02 2004-01-29 Seiko Epson Corp Composition for hole injection transporting layer, organic el element and its manufacturing method
JP3206646B2 (en) 1998-01-22 2001-09-10 日本電気株式会社 Multicolor light emitting organic EL panel and manufacturing method thereof
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
JP4547723B2 (en) * 1998-03-09 2010-09-22 セイコーエプソン株式会社 Manufacturing method of organic EL display device
JP3328297B2 (en) * 1998-03-17 2002-09-24 セイコーエプソン株式会社 Display device manufacturing method
US7090890B1 (en) 1998-04-13 2006-08-15 The Trustees Of Princeton University Modification of polymer optoelectronic properties after film formation by impurity addition or removal
KR100479759B1 (en) * 1998-04-13 2005-04-06 세이코 엡슨 가부시키가이샤 Information recording method, information reproducing method, recording medium used by the method, information recording device,and information reproducing device
KR100669667B1 (en) * 1998-05-29 2007-05-14 삼성에스디아이 주식회사 Manufacturing method of polymer organic electroluminescent device
KR100515822B1 (en) * 1998-05-29 2005-11-25 삼성에스디아이 주식회사 Manufacturing method of polymer organic electroluminescence device
GB9813326D0 (en) 1998-06-19 1998-08-19 Cambridge Display Tech Ltd Backlit displays
JP4258860B2 (en) 1998-09-04 2009-04-30 セイコーエプソン株式会社 Device with light transmission means
JP3900724B2 (en) * 1999-01-11 2007-04-04 セイコーエプソン株式会社 Organic EL element manufacturing method and organic EL display device
EP1083775B1 (en) 1999-03-29 2010-10-13 Seiko Epson Corporation Composition comprising an organic electroluminescent material
JP2000323276A (en) * 1999-05-14 2000-11-24 Seiko Epson Corp Manufacture of organic el element, organic el element, and ink composition
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
TW527735B (en) 1999-06-04 2003-04-11 Semiconductor Energy Lab Electro-optical device
JP2001052864A (en) * 1999-06-04 2001-02-23 Semiconductor Energy Lab Co Ltd Making method of opto-electronical device
US7288420B1 (en) * 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
TW512543B (en) 1999-06-28 2002-12-01 Semiconductor Energy Lab Method of manufacturing an electro-optical device
TW556357B (en) 1999-06-28 2003-10-01 Semiconductor Energy Lab Method of manufacturing an electro-optical device
TW504941B (en) * 1999-07-23 2002-10-01 Semiconductor Energy Lab Method of fabricating an EL display device, and apparatus for forming a thin film
JP4226159B2 (en) 1999-08-06 2009-02-18 シャープ株式会社 Manufacturing method of organic LED display
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
TW471011B (en) * 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
US6582504B1 (en) 1999-11-24 2003-06-24 Sharp Kabushiki Kaisha Coating liquid for forming organic EL element
TW495809B (en) 2000-02-28 2002-07-21 Semiconductor Energy Lab Thin film forming device, thin film forming method, and self-light emitting device
JP4601842B2 (en) * 2000-02-28 2010-12-22 株式会社半導体エネルギー研究所 Thin film formation method
TW495812B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Thin film forming device, method of forming a thin film, and self-light-emitting device
TWI226205B (en) 2000-03-27 2005-01-01 Semiconductor Energy Lab Self-light emitting device and method of manufacturing the same
US6852994B2 (en) 2000-03-31 2005-02-08 Seiko Epson Corporation Organic EL device and method of manufacturing organic EL device
JP2001341296A (en) 2000-03-31 2001-12-11 Seiko Epson Corp Method for forming thin film by ink jet, ink jet unit, organic el element, and method for manufacturing the same
JP4683766B2 (en) * 2000-05-22 2011-05-18 株式会社半導体エネルギー研究所 Active matrix light emitting device
US7339317B2 (en) 2000-06-05 2008-03-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having triplet and singlet compound in light-emitting layers
US6822629B2 (en) 2000-08-18 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6905784B2 (en) 2000-08-22 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2002083691A (en) 2000-09-06 2002-03-22 Sharp Corp Active matrix driven organic led display unit and its manufacturing method
MY141175A (en) 2000-09-08 2010-03-31 Semiconductor Energy Lab Light emitting device, method of manufacturing the same, and thin film forming apparatus
US6893103B2 (en) 2000-10-17 2005-05-17 Seiko Epson Corporation Ink jet recording apparatus and manufacturing method for functional liquid applied substrate
JP3628997B2 (en) 2000-11-27 2005-03-16 セイコーエプソン株式会社 Method for manufacturing organic electroluminescence device
JP4021177B2 (en) 2000-11-28 2007-12-12 セイコーエプソン株式会社 Organic electroluminescence device manufacturing method, organic electroluminescence device, and electronic apparatus
US6787063B2 (en) 2001-03-12 2004-09-07 Seiko Epson Corporation Compositions, methods for producing films, functional elements, methods for producing functional elements, methods for producing electro-optical devices and methods for producing electronic apparatus
KR100635037B1 (en) * 2001-04-12 2006-10-17 삼성에스디아이 주식회사 Organic electroluminescence device
JP2002343565A (en) 2001-05-18 2002-11-29 Sharp Corp Manufacturing method of organic led display panel, organic led display panel manufactured by the same, and base film and substrate used for the same
US7199515B2 (en) 2001-06-01 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and light emitting device using the element
JP4683772B2 (en) 2001-06-15 2011-05-18 株式会社半導体エネルギー研究所 Method for manufacturing light emitting device
JP2003022892A (en) 2001-07-06 2003-01-24 Semiconductor Energy Lab Co Ltd Manufacturing method of light emitting device
JP4766218B2 (en) 2001-07-09 2011-09-07 セイコーエプソン株式会社 Organic EL array exposure head, manufacturing method thereof, and image forming apparatus using the same
JPWO2003030131A1 (en) 2001-08-29 2005-01-20 セイコーエプソン株式会社 Electro-optical device and electronic apparatus
US20030166311A1 (en) 2001-09-12 2003-09-04 Seiko Epson Corporation Method for patterning, method for forming film, patterning apparatus, film formation apparatus, electro-optic apparatus and method for manufacturing the same, electronic equipment, and electronic apparatus and method for manufacturing the same
JP4345278B2 (en) * 2001-09-14 2009-10-14 セイコーエプソン株式会社 PATTERNING METHOD, FILM FORMING METHOD, PATTERNING APPARATUS, ORGANIC ELECTROLUMINESCENCE ELEMENT MANUFACTURING METHOD, COLOR FILTER MANUFACTURING METHOD, ELECTRO-OPTICAL DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
US7483001B2 (en) 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
JP4197117B2 (en) 2001-11-22 2008-12-17 シャープ株式会社 Organic thin film device using polymer material having carrier transport property, method for manufacturing organic thin film device, and wiring
JP3693051B2 (en) 2001-12-20 2005-09-07 セイコーエプソン株式会社 Electro-optical device, luminance design method for electro-optical device, luminance design program for electro-optical device, and electronic apparatus
TWI258317B (en) 2002-01-25 2006-07-11 Semiconductor Energy Lab A display device and method for manufacturing thereof
EP1338431A3 (en) 2002-02-08 2003-10-01 Fuji Photo Film Co., Ltd. Visible image receiving material having surface hydrophilicity
ATE381441T1 (en) 2002-03-11 2008-01-15 Seiko Epson Corp OPTICAL WRITING HEAD SUCH AS ORGANIC ELECTROLUMINescent EXPOSURE HEAD MATRICES, METHOD FOR THE PRODUCTION THEREOF AND IMAGE PRODUCING APPARATUS USING THE SAME
US7283149B2 (en) 2002-05-31 2007-10-16 Seiko Epson Corporation Optical head and image forming apparatus employing the same
US6858464B2 (en) 2002-06-19 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
TWI276366B (en) 2002-07-09 2007-03-11 Semiconductor Energy Lab Production apparatus and method of producing a light-emitting device by using the same apparatus
JP4225425B2 (en) 2002-09-24 2009-02-18 シャープ株式会社 Manufacturing method and apparatus for active matrix organic EL display, active matrix organic EL display, liquid crystal array manufacturing method and liquid crystal array, color filter substrate manufacturing method and apparatus, and color filter substrate
AU2003277541A1 (en) 2002-11-11 2004-06-03 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating light emitting device
JP4089544B2 (en) 2002-12-11 2008-05-28 ソニー株式会社 Display device and manufacturing method of display device
US7119826B2 (en) 2002-12-16 2006-10-10 Seiko Epson Corporation Oranic EL array exposure head, imaging system incorporating the same, and array-form exposure head fabrication process
JP4830254B2 (en) 2003-01-23 2011-12-07 セイコーエプソン株式会社 Method for manufacturing organic EL device and electronic device
JP3966283B2 (en) 2003-01-28 2007-08-29 セイコーエプソン株式会社 LIGHT EMITTING BODY, ITS MANUFACTURING METHOD AND DEVICE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE
JP4244697B2 (en) 2003-05-13 2009-03-25 セイコーエプソン株式会社 Display apparatus and method
JP4299059B2 (en) 2003-05-30 2009-07-22 株式会社 日立ディスプレイズ Method for manufacturing organic electroluminescence display device
JP3994994B2 (en) * 2003-10-23 2007-10-24 セイコーエプソン株式会社 Organic EL device manufacturing method, organic EL device, and electronic apparatus
US20060139342A1 (en) * 2004-12-29 2006-06-29 Gang Yu Electronic devices and processes for forming electronic devices
JP2005270725A (en) 2004-03-23 2005-10-06 Sharp Corp Pattern substrate, manufacturing method for pattern substrate and manufacturing apparatus for pattern substrate
US7411601B2 (en) 2004-08-03 2008-08-12 Seiko Epson Corporation Exposure head
JP4548121B2 (en) 2005-01-14 2010-09-22 セイコーエプソン株式会社 Method for manufacturing light emitting device
US7307297B2 (en) 2005-02-10 2007-12-11 Japan Science And Technology Agency Organic photodiode and method for manufacturing the organic photodiode
JP4311360B2 (en) 2005-02-25 2009-08-12 セイコーエプソン株式会社 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE
JP4548153B2 (en) * 2005-03-07 2010-09-22 セイコーエプソン株式会社 Manufacturing method of organic EL display device
US7485023B2 (en) 2005-03-31 2009-02-03 Toppan Printing Co., Ltd. Organic electroluminescent device having partition wall and a manufacturing method of the same by relief printing method
JP2007012504A (en) 2005-07-01 2007-01-18 Toppan Printing Co Ltd Method for manufacturing organic el device, and organic el device
JP4872288B2 (en) 2005-09-22 2012-02-08 凸版印刷株式会社 Organic EL device and manufacturing method thereof
TWI405036B (en) 2005-09-29 2013-08-11 Jnc Corp Fluorine-containing photocurable polymer composition
JP2007106428A (en) * 2005-10-11 2007-04-26 Sharp Corp Ink tank, and inkjet applying device
JP2007122914A (en) 2005-10-25 2007-05-17 Sharp Corp Manufacturing method of organic electroluminescence display and manufacturing apparatus used therefor
US7696683B2 (en) 2006-01-19 2010-04-13 Toppan Printing Co., Ltd. Organic electroluminescent element and the manufacturing method
US7546803B2 (en) 2006-01-30 2009-06-16 Toppan Printing Co., Ltd. Letterpress printing machine
WO2007094101A1 (en) 2006-02-14 2007-08-23 Sharp Kabushiki Kaisha Organic electroluminescence device and organic electroluminescence display device
JP4706845B2 (en) 2006-02-15 2011-06-22 凸版印刷株式会社 Manufacturing method of organic EL element
US7880382B2 (en) 2006-03-08 2011-02-01 Toppan Printing Co., Ltd. Organic electroluminescence panel and manufacturing method of the same
US7687390B2 (en) 2006-03-28 2010-03-30 Toppan Printing Co., Ltd. Manufacturing method of a transparent conductive film, a manufacturing method of a transparent electrode of an organic electroluminescence device, an organic electroluminescence device and the manufacturing method
JP2007273094A (en) 2006-03-30 2007-10-18 Toppan Printing Co Ltd Organic electroluminescence element and manufacturing method therefor
CN101411002B (en) 2006-04-05 2010-10-13 夏普株式会社 Method for manufacturing organic electroluminescent display
JP5214467B2 (en) 2006-12-26 2013-06-19 旭化成イーマテリアルズ株式会社 Resin composition for printing plate
US7910287B2 (en) 2007-02-14 2011-03-22 Toppan Printing Co., Ltd. Relief printing plate, and method for manufacturing electronic circuit pattern, organic electroluminescence device and organic electronic device by using the same
JP5250981B2 (en) 2007-02-21 2013-07-31 セイコーエプソン株式会社 Organic device manufacturing method and electronic device
WO2008105472A1 (en) * 2007-02-28 2008-09-04 Idemitsu Kosan Co., Ltd. Organic el material-containing solution, method for forming organic el thin film, organic el device comprising organic el thin film, and method for manufacturing organic el display panel
JP4547441B2 (en) 2008-03-31 2010-09-22 パナソニック株式会社 Organic EL ink composition and method for producing the same
JP2010044118A (en) 2008-08-08 2010-02-25 Sony Corp Display, and its manufacturing method
DE102008045948A1 (en) 2008-09-04 2010-03-11 Osram Opto Semiconductors Gmbh Method for producing an organic radiation-emitting component and organic radiation-emitting component
JP5396976B2 (en) 2008-09-29 2014-01-22 凸版印刷株式会社 Organic EL device and manufacturing method thereof
JP4898850B2 (en) 2009-01-22 2012-03-21 住友化学株式会社 INK JET INK FOR ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENT ELEMENT
CN103120022B (en) 2010-09-27 2016-03-09 凸版印刷株式会社 Printing relief printing plate and use the manufacture method of organic EL element of this printing relief printing plate

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7399497B2 (en) 2003-04-15 2008-07-15 Seiko Epson Corporation Method for forming film, method of manufacturing electronic device, film forming system, electronic device, and electronic apparatus
US11141752B2 (en) 2012-12-27 2021-10-12 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US11233226B2 (en) 2012-12-27 2022-01-25 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US9224952B2 (en) 2012-12-27 2015-12-29 Kateeva, Inc. Methods of manufacturing electronic display devices employing nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US9352561B2 (en) 2012-12-27 2016-05-31 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US11673155B2 (en) 2012-12-27 2023-06-13 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US9537119B2 (en) 2012-12-27 2017-01-03 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US9700908B2 (en) 2012-12-27 2017-07-11 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US11489146B2 (en) 2012-12-27 2022-11-01 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US9802403B2 (en) 2012-12-27 2017-10-31 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US10784470B2 (en) 2012-12-27 2020-09-22 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US11167303B2 (en) 2012-12-27 2021-11-09 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US9832428B2 (en) 2012-12-27 2017-11-28 Kateeva, Inc. Fast measurement of droplet parameters in industrial printing system
US11678561B2 (en) 2012-12-27 2023-06-13 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US9010899B2 (en) 2012-12-27 2015-04-21 Kateeva, Inc. Techniques for print ink volume control to deposit fluids within precise tolerances
US10950826B2 (en) 2012-12-27 2021-03-16 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US10784472B2 (en) 2012-12-27 2020-09-22 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US10797270B2 (en) 2012-12-27 2020-10-06 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US11551982B2 (en) 2013-12-12 2023-01-10 Kateeva, Inc. Fabrication of thin-film encapsulation layer for light-emitting device
US10811324B2 (en) 2013-12-12 2020-10-20 Kateeva, Inc. Fabrication of thin-film encapsulation layer for light emitting device
US11088035B2 (en) 2013-12-12 2021-08-10 Kateeva, Inc. Fabrication of thin-film encapsulation layer for light emitting device
US8995022B1 (en) 2013-12-12 2015-03-31 Kateeva, Inc. Ink-based layer fabrication using halftoning to control thickness
US9831473B2 (en) 2013-12-12 2017-11-28 Kateeva, Inc. Encapsulation layer thickness regulation in light emitting device
US9806298B2 (en) 2013-12-12 2017-10-31 Kateeva, Inc. Techniques for edge management of printed layers in the fabrication of a light emitting device
US11456220B2 (en) 2013-12-12 2022-09-27 Kateeva, Inc. Techniques for layer fencing to improve edge linearity
US9755186B2 (en) 2013-12-12 2017-09-05 Kateeva, Inc. Calibration of layer thickness and ink volume in fabrication of encapsulation layer for light emitting device
US10586742B2 (en) 2013-12-12 2020-03-10 Kateeva, Inc. Fabrication of thin-film encapsulation layer for light emitting device
US9496519B2 (en) 2013-12-12 2016-11-15 Kateeva, Inc. Encapsulation of components of electronic device using halftoning to control thickness
US10522425B2 (en) 2013-12-12 2019-12-31 Kateeva, Inc. Fabrication of thin-film encapsulation layer for light emitting device

Also Published As

Publication number Publication date
JPH1012377A (en) 1998-01-16

Similar Documents

Publication Publication Date Title
JP3036436B2 (en) Method of manufacturing active matrix type organic EL display
JP3899566B2 (en) Manufacturing method of organic EL display device
JP4062352B2 (en) Organic EL display device
JP3900724B2 (en) Organic EL element manufacturing method and organic EL display device
KR100403544B1 (en) Production of organic luminescence device
JP3649125B2 (en) ELECTROLUMINESCENT ELEMENT MANUFACTURING METHOD AND ELECTROLUMINESCENT ELEMENT
JP2001093668A (en) Organic light-emitting material, display material using the same and method for manufacturing
JP2000123975A (en) Active matrix type organic el display body
JP2004006393A (en) Manufacturing method of organic el display body
JP2004006395A (en) Manufacturing method of organic el display body
JP2004006394A (en) Manufacturing method of organic el display body
KR100905332B1 (en) Apparatus And Method Of Fabricating Of Electro-luminescence Display Device
JP3533496B2 (en) Method for manufacturing electroluminescent device
JP2006004758A (en) Light emitting display device and its manufacturing method

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20000125

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080225

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090225

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090225

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100225

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110225

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110225

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120225

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130225

Year of fee payment: 13

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130225

Year of fee payment: 13

EXPY Cancellation because of completion of term