JP3036436B2 - Method for manufacturing an active matrix type organic el display body - Google Patents

Method for manufacturing an active matrix type organic el display body

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JP3036436B2
JP3036436B2 JP15867196A JP15867196A JP3036436B2 JP 3036436 B2 JP3036436 B2 JP 3036436B2 JP 15867196 A JP15867196 A JP 15867196A JP 15867196 A JP15867196 A JP 15867196A JP 3036436 B2 JP3036436 B2 JP 3036436B2
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JPH1012377A (en )
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達也 下田
悟 宮下
浩史 木口
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セイコーエプソン株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0034Organic polymers or oligomers
    • H01L51/0035Organic polymers or oligomers comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline, polyphenylene, polyphenylene vinylene
    • H01L51/0038Poly-phenylenevinylene and derivatives
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3206Multi-colour light emission
    • H01L27/3211Multi-colour light emission using RGB sub-pixels
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5088Carrier injection layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2251/00Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
    • H01L2251/50Organic light emitting devices
    • H01L2251/53Structure
    • H01L2251/5307Structure specially adapted for controlling the direction of light emission
    • H01L2251/5315Top emission
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/3248Connection of the pixel electrode to the TFT
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002Deposition of organic semiconductor materials on a substrate
    • H01L51/0003Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating
    • H01L51/0004Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing, screen printing
    • H01L51/0005Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing, screen printing ink-jet printing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、薄膜トランジスタを用いたアクティブマトリックス型のEL表示体のインクジェット方式を用いた製造方法に関する。 The present invention relates to a process for the inkjet fabrication method of the active matrix type EL display of using a thin film transistor.

【0002】 [0002]

【従来の技術】有機EL素子は、蛍光性有機化合物を含む薄膜を、陰極と陽極とで挟んだ構成を有し、前記薄膜に電子および正孔(ホール)を注入して再結合させることにより励起子(エキシトン)を生成させ、このエキシトンが失活する際の光の放出(蛍光・燐光)を利用して発光させる素子である。 BACKGROUND ART Organic EL elements, a thin film containing a fluorescent organic compound has a structure sandwiched by a cathode and an anode, by recombination by injecting electrons and positive holes in the thin film to generate excitons, an element which emits light by utilizing emission (fluorescence or phosphorescence) of light when the excitons are deactivated.

【0003】この有機EL素子の特徴は、10V以下の低電圧で100〜100000 cd/m2 程度の高輝度の面発光が可能であり、また蛍光物質の種類を選択することにより青色から赤色までの発光が可能なことである。 [0003] The organic EL device characteristics is capable of surface emission of high luminance of about 100 to 100000 cd / m @ 2 at a low voltage below 10V, also from the blue by selecting the kind of the fluorescent substance to red emission is that it is possible.

【0004】有機EL素子は、安価な大面積フルカラー表示素子を実現するものとして注目を集めている(電子情報通信学会技術報告、第89巻、NO.106、49 [0004] The organic EL element has attracted attention as realizing an inexpensive large full-color display device (IEICE Technical Report, Vol. 89, NO.106,49
ページ、1989年)。 Page, 1989). 報告によると、強い蛍光を発する有機色素を発光層に使用し、青、緑、赤色の明るい発光を得ている。 According to the report, an organic dye that emits strong fluorescence is used in the light-emitting layer, to obtain blue, green, red bright light emission. これは、薄膜状で強い蛍光を発し、ピンホール欠陥の少ない有機色素を用いたことで、高輝度なフルカラー表示を実現できたと考えられている。 It emits strong fluorescence in a thin film, by using a small organic dye pinhole defects are thought to have realized high luminance color display.

【0005】更に特開平5−78655号公報には、有機発光層の成分が有機電荷材料と有機発光材料の混合物からなる薄膜層を設け、濃度消光を防止して発光材料の選択幅を広げ、高輝度なフルカラー素子とする旨が提案されている。 Furthermore in Japanese Patent Laid-Open No. 5-78655 is a thin layer components of the organic light-emitting layer comprises a mixture of an organic charge material and an organic light emitting material is provided, spread choice of luminescent materials to prevent concentration quenching, effect that a high brightness full color element has been proposed.

【0006】しかし、いずれの報告にも、実際のフルカラー表示パネルの構成や製造方法については言及されていない。 [0006] However, in any of the report, it does not refer to the actual configuration and method of manufacturing a full-color display panel.

【0007】 [0007]

【発明が解決しようとする課題】前述の有機色素を用いた有機薄膜EL素子は、青、緑、赤の発光を示す。 [0007] The organic thin-film EL device using the above organic dyes exhibit blue, green, light emission of red. しかし、よく知られているように、フルカラー表示体を実現するためには、3原色を発光する有機発光層を画素毎に配置する必要がある。 However, as is well known, in order to realize a full color display element, it is necessary to place the organic light emitting layer for emitting three primary colors for each pixel. 従来、有機発光層をパターニングする技術は非常に困難とされていた。 Conventionally, a technique for patterning the organic light-emitting layer had been very difficult. 原因は、一つは反射電極材の金属表面が不安定であり、蒸着のパターニング精度が出ないという点である。 Cause, one is unstable metal surface of the reflective electrode material is that the patterning accuracy of the evaporation does not appear. 2つめは、正孔注入層および有機発光層を形成するポリマーや前駆体がフォトリソグラフィー等のパターニング工程に対して耐性が無いという点である。 Second, a polymer or precursor that forms the hole injection layer and the organic light-emitting layer is that resistance is no relative patterning process such as photolithography.

【0008】本発明は、上述したような課題を解決するものであり、その目的は、有機発光層をインクジェット方式により画素毎にパターニングしたアクティブマトリックス型EL表示体の製造方法を提供することにある。 [0008] The present invention is intended to solve the above problems, its object is to provide a method for manufacturing an active matrix type EL display that is patterned for each pixel by an inkjet method and the organic light-emitting layer .

【0009】 [0009]

【課題を解決するための手段】本発明に関わるアクティブマトリックス型有機EL表示体の製造方法は、薄膜トランジスタを有するガラス基板に形成された透明画素電極上層に正孔注入層が形成され、この上層に少なくとも各画素毎に赤、緑、青より選択された発光色を有する有機発光層(特にポリマーまたはその前駆体よりなる発光材料で構成された有機発光層)が形成され、更にこの上層に反射電極が形成されるアクティブマトリックス型有機EL表示体の製造方法において、前記有機発光層をその形状および配列が最終パターンとなるようインクジェット方式により形成することを特徴とする。 Method for manufacturing an active matrix type organic EL display according to the present invention SUMMARY OF], the hole injection layer is formed on the transparent pixel electrode layer formed on a glass substrate having a thin film transistor, this layer red at least for each pixel, a green organic light-emitting layer having an emission colors selected from blue (especially polymers or organic light-emitting layer composed of a luminescent material consisting of a precursor thereof) is formed, further reflective electrode in an upper layer There in the manufacturing method of an active matrix type organic EL display is formed, the organic light emitting layer is the shape and arrangement and forming by an inkjet method to a final pattern. また、薄膜トランジスタを有するガラス基板に形成された透明画素電極上層に少なくとも各画素毎に赤、緑、青より選択された発光色を有する有機発光層が形成され、更にこの上層に反射電極が形成されるアクティブマトリックス型有機EL表示体の製造方法において、前記有機発光層をその形状および配列が最終パターンとなるようインクジェット方式により形成することを特徴とする。 Also, red least for each pixel in the transparent pixel electrode layer formed on a glass substrate having a thin film transistor, green, organic light-emitting layer having an emission colors selected from blue are formed, it is formed further reflective electrode in an upper layer that in the manufacturing method of an active matrix type organic EL display, the organic light emitting layer its shape and sequences and forming by an inkjet method to a final pattern.

【0010】更に、薄膜トランジスタを有するガラス基板に形成された反射画素電極上層に少なくとも各画素毎に赤、緑、青より選択された発光色を有する有機発光層が形成され、この上層に正孔注入層が形成され、更にこの上層に透明電極が形成されるアクティブマトリックス型有機EL表示体の製造方法において、前記有機発光層をその形状および配列が最終パターンとなるようインクジェット方式により形成することを特徴とし、また、薄膜トランジスタを有するガラス基板に形成された反射画素電極上層に少なくとも各画素毎に赤、緑、青より選択された発光色を有する有機発光層が形成され、更にこの上層に透明電極が形成されるアクティブマトリックス型有機EL表示体の製造方法において、前記有機発光層をその形状および配 Furthermore, red least for each pixel to the reflective pixel electrode layer formed on a glass substrate having a thin film transistor, green, organic light-emitting layer having an emission colors selected from blue is formed, hole injection into the upper layer layer is formed, characterized in that further in the method for manufacturing an active matrix type organic EL display that this upper layer to the transparent electrode is formed, the organic light emitting layer that shape and arrangement are formed by an inkjet method to a final pattern and then, also, red least for each pixel to the reflective pixel electrode layer formed on a glass substrate having a thin film transistor, green, organic light-emitting layer having an emission colors selected from blue are formed, the transparent electrode further to the upper layer in the manufacturing method of an active matrix type organic EL display is formed, the shape and arrangement of the organic light-emitting layer が最終パターンとなるようインクジェット方式により形成することを特徴とする。 There and forming by an inkjet method to a final pattern.

【0011】本発明は、要するに図3に示すように、基板上に形成された信号線301、ゲート線302、画素電極303および薄膜トランジスタ304上に、インクジェット法により、赤、緑、青色の有機発光材料をパターニング塗布することで、フルカラー表示を実現するものである。 [0011] The present invention is, in short, as shown in FIG. 3, the signal line 301 formed on a substrate, a gate line 302, on the pixel electrode 303 and a thin film transistor 304, by an ink jet method, red, green, blue organic light emitting material is patterned coated, and realizes a full color display.

【0012】 [0012]

【発明の実施の形態】以下、本発明の好適な実施形態について図面を参照して説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, will be explained with reference to the accompanying drawings preferred embodiments of the present invention.

【0013】(実施例1)図1に示すように、ガラス基板101上に薄膜トランジスタ102を形成してから、 [0013] As shown in (Example 1) FIG. 1, after forming a thin film transistor 102 on a glass substrate 101,
ITO透明画素電極103を形成する。 Forming an ITO transparent pixel electrodes 103.

【0014】正孔注入材料としてポリマー前駆体であるポリテトラヒドロチオフェニルフェニレンをコーティングする。 [0014] coating a poly tetrahydrothiophenyl phenylene which is a polymer precursor as a hole injection material. 加熱により、前駆体はポリフェニレンビニレンとなり、厚さ0.05ミクロンの正孔注入層104が形成される。 By heating the precursor becomes polyphenylene vinylene, hole injection layer 104 having a thickness of 0.05 micron is formed.

【0015】次に、インクジェットプリント装置105 Next, ink-jet printing apparatus 105
により赤、緑、青色を発色する発光材料をパターニング塗布し、厚さ0.05ミクロンの発色層106、10 Red, green, coated patterned luminescent material which develops a blue, thick 0.05 micron coloring layer by 106,10
7、108を形成する。 To form a 7,108. 赤色発光材料にはシアノポリフェニレンビニレン、緑色発光材料にはポリフェニレンビニレン、青色発光材料にはポリフェニレンビニレンおよびポリアルキルフェニレンを使用する。 Red light-emitting material cyanopolyphenylenevinylene, polyphenylene vinylene may be green light emitting material, the blue light-emitting material using a polyphenylene vinylene and polyalkyl phenylene. これらの有機E These organic E
L材料はケンブリッジ・ディスプレイ・テクノロジー社製であり、液状で入手可能である。 L material is made of Cambridge Display Technology, Inc., it is available in liquid form.

【0016】最後に、厚さ0.1〜0.2ミクロンのM [0016] of the last, a thickness of 0.1 to 0.2 micron M
gAg反射電極109を蒸着法により形成する。 The gAg reflective electrode 109 is formed by vapor deposition.

【0017】これにより、直視型のフルカラー有機EL [0017] As a result, the direct-view-type full-color organic EL of
表示体が完成する。 Display body is completed.

【0018】(実施例2)図2に示すように、ガラス基板201上に薄膜トランジスタ202を形成してから、 As shown in (Example 2) FIG. 2, after forming a thin film transistor 202 on the glass substrate 201,
AlLi反射画素電極203を形成する。 Forming an AlLi reflective pixel electrodes 203.

【0019】次に、インクジェットプリント装置207 Next, ink-jet printing apparatus 207
により赤、緑、青色を発色する発光材料をパターニング塗布し、発色層204、205、206を形成する。 The red, green, a luminescent material which develops a blue patterned coating to form a coloring layer 204, 205, 206. 赤色発光材料にはシアノポリフェニレンビニレン、緑色発光材料にはポリフェニレンビニレン、青色発光材料にはポリフェニレンビニレンおよびポリアルキルフェニレンを使用する。 Red light-emitting material cyanopolyphenylenevinylene, polyphenylene vinylene may be green light emitting material, the blue light-emitting material using a polyphenylene vinylene and polyalkyl phenylene. これらの有機EL材料はケンブリッジ・ディスプレイ・テクノロジー社製であり、液状で入手可能である。 These organic EL material is made of Cambridge Display Technology, available in liquid form.

【0020】正孔注入材料としてポリマー前駆体であるポリテトラヒドロチオフェニルフェニレンをキャスト法により形成する。 [0020] formed by casting a poly tetrahydrothiophenyl phenylene which is a polymer precursor as a hole injection material. 加熱により、前駆体はポリフェニレンビニレンとなり、正孔注入層208が形成される。 By heating the precursor becomes polyphenylene vinylene, hole injection layer 208 is formed.

【0021】最後に、ITO透明電極209を蒸着法により形成する。 [0021] Finally, an ITO transparent electrode 209 by vapor deposition.

【0022】これにより、反射型のフルカラー有機EL [0022] As a result, the reflection-type full-color organic EL of
表示体が完成する。 Display body is completed.

【0023】(実施例3)有機発光層の有機発光材料として2,3,6,7-テトラヒドロ-11-オキソ−1H,5H,11H-(1) [0023] 2,3,6,7-tetrahydro-11-oxo -1H as organic light-emitting material (Example 3) The organic light-emitting layer, 5H, 11H- (1)
ベンゾピラノ[6,7,8-ij]-キノリジン-10-カルボン酸を用い、有機正孔注入層材料として1,1-ビス-(4-N,N-ジトリルアミノフェニル)シクロヘキサンを用い、両者を混合することで緑色の発光材料とする。 Benzopyrano [6,7,8-ij] - using quinolizine-10-carboxylic acid, 1,1-bis organic hole injection layer material - (4-N, N- ditolyl aminophenyl) with cyclohexane, both It is referred to as green light emitting material by mixing.

【0024】同様に、赤色の有機発光材料として、2-1 [0024] Similarly, as a red organic luminescent material, 2-1
3',4'-ジヒドロキシフェニル)-3,5,7-トリヒドロキシ-1 3 ', 4'-dihydroxyphenyl) -3,5,7-trihydroxy -1
-ベンゾピリリウムパークロレートを用いて正孔注入層材料と混合する。 - it is mixed with the hole injection layer material using benzopyrylium perchlorate.

【0025】更に、青色発光層には有機正孔注入材料としてトリス(8-ヒドロキシキノリノール)アルミニウムを用い、有機発光材料として、2,3,6,7-テトラヒドロ-9- Furthermore, using tris (8-hydroxy quinolinol) aluminum as organic hole injecting material in the blue light-emitting layer, as an organic luminescent material, 2,3,6,7-tetrahydro-9-
メチル-11-オキソ-1H,5H,11H-(1)ベンゾピラノ[6,7,8-i Methyl-11-oxo -1H, 5H, 11H- (1) benzopyrano [6, 7, 8-i
j]-キノリジンを混合し、発光材料を作成する。 j] - quinolizine are mixed to a light-emitting material.

【0026】実施例1または実施例2と同様な工程で、 [0026] In the same manner as in Example 1 or Example 2 step,
各々の発光層をインクジェットプリンタ装置により局所パターニングし、アクティブマトリックス型有機EL表示体を作成する。 Each of the light-emitting layer locally patterned by an inkjet printer, to create an active matrix type organic EL display.

【0027】なお、本実施例で使用した有機EL材料以外にも、アロマティックジアミン誘導体(TDP)、オキシジアゾールダイマー(OXD)、オキシジアゾール誘導体(PBD)、ジスチルアリーレン誘導体(DS [0027] In addition to the organic EL material used in this embodiment also, aromatic diamine derivatives (TDP), oxydiazole dimers (OXD), oxadiazole derivatives (PBD), di still arylene derivative (DS
A)、キノリノール系金属錯体、ベリリウム−ベンゾキノリノール錯体(Bebq)、トリフェニルアミン誘導体(MTDATA)、ジスチリル誘導体、ピラゾリンダイマー、ルブレン、キナクリドン、トリアゾール誘導体、ポリフェニレン、ポリアルキルフルオレン、ポリアルキルチオフェン、アゾメチン亜鉛錯体、ポリフィリン亜鉛錯体、ベンゾオキサゾール亜鉛錯体、フェナントロリンユウロピウム錯体が使用できるが、これに限られる物ではない。 A), quinolinol metal complex, beryllium - benzoquinolinol complex (Bebq), triphenylamine derivatives (MTDATA), distyryl derivatives, pyrazoline dimers, rubrene, quinacridone, triazole derivatives, polyphenylene, polyalkylfluorene, polyalkylthiophene, azomethine zinc complexes, porphyrin zinc complexes, benzoxazole zinc complexes, although phenanthroline europium complex can be used, not be construed as limited thereto.

【0028】 [0028]

【発明の効果】従来、パターニングができないとされた有機EL材料をインクジェット方式により形成および配列することでパターニングが可能となり、フルカラー表示のアクティブマトリックス型有機EL表示体を実現した。 Effect of the Invention Conventionally, patterning enables patterning by forming and sequence by an inkjet method an organic EL material which is not possible, to realize an active matrix type organic EL display a full-color display. これにより、安価で大画面のフルカラー表示体が製造可能となり、効果は大である。 As a result, full-color display of the large screen becomes can be manufactured at low cost, the effect is large.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の第1の実施形態におけるアクティブマトリックス型有機EL表示体の工程を示す図である。 It is a diagram illustrating the steps of an active matrix type organic EL display according to the first embodiment of the present invention; FIG.

【図2】本発明の第2の実施形態におけるアクティブマトリックス型有機EL表示体の工程を示す図である。 It is a diagram illustrating the steps of an active matrix type organic EL display in the second embodiment of the present invention; FIG.

【図3】本発明の薄膜トランジスタ上にインクジェット法により形成された発色層を示す図である。 3 is a diagram showing a color layer formed by an inkjet method on the thin film transistor of the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

101 ガラス基板 102 薄膜トランジスタ 103 透明画素電極 104 正孔注入層 105 インクジェットプリンタヘッド 106 有機発光層(第1色) 107 有機発光層(第2色) 108 有機発光層(第3色) 109 反射電極 201 ガラス基板 202 薄膜トランジスタ 203 反射画素電極 204 有機発光層(第1色) 205 有機発光層(第2色) 206 有機発光層(第3色) 207 インクジェットプリンタヘッド 208 正孔注入層 209 透明電極 301 信号線 302 ゲート線 303 画素電極 304 薄膜トランジスタ 305 有機発光層(第1色) 306 有機発光層(第2色) 307 有機発光層(第3色) 101 glass substrate 102 thin film transistor 103 a transparent pixel electrode 104 hole injection layer 105 ink-jet printer head 106 organic light-emitting layer (first color) 107 organic light-emitting layer (second color) 108 organic light-emitting layer (third color) 109 reflective electrode 201 Glass substrate 202 thin film transistor 203 reflective pixel electrode 204 organic light-emitting layer (first color) 205 organic light-emitting layer (second color) 206 organic light-emitting layer (third color) 207 inkjet printer head 208 hole injection layer 209 transparent electrode 301 signal line 302 the gate lines 303 pixel electrode 304 a thin film transistor 305 organic light-emitting layer (first color) 306 organic light-emitting layer (second color) 307 organic light-emitting layer (third color)

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平7−235378(JP,A) 特開 平11−16679(JP,A) 特開 昭63−235901(JP,A) 特開 平4−121702(JP,A) (58)調査した分野(Int.Cl. 7 ,DB名) H05B 33/00 - 33/28 ────────────────────────────────────────────────── ─── continued (56) references of the front page Patent flat 7-235378 (JP, a) JP flat 11-16679 (JP, a) JP Akira 63-235901 (JP, a) JP flat 4- 121702 (JP, a) (58 ) investigated the field (Int.Cl. 7, DB name) H05B 33/00 - 33/28

Claims (9)

    (57)【特許請求の範囲】 (57) [the claims]
  1. 【請求項1】 薄膜トランジスタを有するガラス基板に形成された透明画素電極上層に正孔注入層が形成され、 1. A hole injection layer is formed on the transparent pixel electrode layer formed on a glass substrate having a thin film transistor,
    この上層に少なくとも各画素毎に赤、緑、青より選択された発光色を有する有機発光層が形成され、更にこの上層に反射電極が形成されるアクティブマトリックス型有機EL表示体の製造方法において、前記有機発光層をその形状および配列が最終パターンとなるようインクジェット方式により形成することを特徴とするアクティブマトリックス型有機EL表示体の製造方法。 At least for each pixel in the upper red, green, be organic light emitting layer is formed with luminescent color selected from blue, in yet method for manufacturing an active matrix type organic EL display in which the reflective electrode is formed on this upper layer, method for manufacturing an active matrix type organic EL display, wherein the organic light-emitting layer the shape and arrangement are formed by an inkjet method to a final pattern.
  2. 【請求項2】 薄膜トランジスタを有するガラス基板に形成された透明画素電極上層に少なくとも各画素毎に赤、緑、青より選択された発光色を有する有機発光層が形成され、更にこの上層に反射電極が形成されるアクティブマトリックス型有機EL表示体の製造方法において、前記有機発光層をその形状および配列が最終パターンとなるようインクジェット方式により形成することを特徴とするアクティブマトリックス型有機EL表示体の製造方法。 2. A red at least every pixel in the transparent pixel electrode layer formed on a glass substrate having a thin film transistor, green, organic light-emitting layer having an emission colors selected from blue is formed, further reflective electrode in an upper layer in the manufacturing method of an active matrix type organic EL display body but formed, the manufacture of active matrix organic EL display in which the organic light emitting layer its shape and sequences and forming by an inkjet method to a final pattern Method.
  3. 【請求項3】 薄膜トランジスタを有するガラス基板に形成された反射画素電極上層に少なくとも各画素毎に赤、緑、青より選択された発光色を有する有機発光層が形成され、この上層に正孔注入層が形成され、更にこの上層に透明電極が形成されるアクティブマトリックス型有機EL表示体の製造方法において、前記有機発光層をその形状および配列が最終パターンとなるようインクジェット方式により形成することを特徴とするアクティブマトリックス型有機EL表示体の製造方法。 3. A red at least every pixel in the reflective pixel electrode layer formed on a glass substrate having a thin film transistor, green, organic light-emitting layer having an emission colors selected from blue is formed, hole injection into the upper layer layer is formed, characterized in that further in the method for manufacturing an active matrix type organic EL display that this upper layer to the transparent electrode is formed, the organic light emitting layer that shape and arrangement are formed by an inkjet method to a final pattern method for manufacturing an active matrix type organic EL display to.
  4. 【請求項4】 薄膜トランジスタを有するガラス基板に形成された反射画素電極上層に少なくとも各画素毎に赤、緑、青より選択された発光色を有する有機発光層が形成され、更にこの上層に透明電極が形成されるアクティブマトリックス型有機EL表示体の製造方法において、前記有機発光層をその形状および配列が最終パターンとなるようインクジェット方式により形成することを特徴とするアクティブマトリックス型有機EL表示体の製造方法。 4. A red at least every pixel in the reflective pixel electrode layer formed on a glass substrate having a thin film transistor, green, organic light-emitting layer having an emission colors selected from blue is formed, further the transparent electrode to the upper layer in the manufacturing method of an active matrix type organic EL display body but formed, the manufacture of active matrix organic EL display in which the organic light emitting layer its shape and sequences and forming by an inkjet method to a final pattern Method.
  5. 【請求項5】 前記インクジェット方式でポリマーまたはその前駆体を供給して、前記有機発光層を形成する請求項1ないし4のいずれかに記載のアクティブマトリックス型有機EL表示体の製造方法。 5. supplying polymer or a precursor thereof in the ink-jet method, a manufacturing method of an active matrix type organic EL display according to any one of claims 1 to 4 to form the organic light emitting layer.
  6. 【請求項6】 シアノポリフェニレンビニレンにより、 By 6. cyanopolyphenylenevinylene,
    赤色の発光色を有する前記有機発光層を形成する請求項1ないし5のいずれかに記載のアクティブマトリックス型有機EL表示体の製造方法。 Method for manufacturing an active matrix type organic EL display according to any one of claims 1 to 5 to form the organic light-emitting layer having a red emission color.
  7. 【請求項7】 ポリフェニレンビニレンにより、緑色の発光色を有する前記有機発光層を形成する請求項1ないし6のいずれかに記載のアクティブマトリックス型有機EL表示体の製造方法。 7. The polyphenylene vinylene, the method for manufacturing an active matrix type organic EL display according to any one of claims 1 to 6 to form the organic light-emitting layer having a green luminescent color.
  8. 【請求項8】 ポリフェニレンビニレンおよびポリアルキルフェニレンにより、青色の発光色を有する前記有機発光層を形成する請求項1ないし7のいずれかに記載のアクティブマトリックス型有機EL表示体の製造方法。 8. The polyphenylene vinylene and polyalkyl phenylene, method for manufacturing an active matrix type organic EL display according to any one of claims 1 to 7 to form the organic light-emitting layer having a blue emission color.
  9. 【請求項9】 前記有機発光層をポリアルキルフルオレンで構成する請求項1ないし8のいずれかに記載のアクティブマトリックス型有機EL表示体の製造方法。 9. A method for manufacturing an active matrix type organic EL display according to any one of claims 1 to 8 constituting the organic light emitting layer in polyalkylfluorene.
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Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3899566B2 (en) * 1996-11-25 2007-03-28 セイコーエプソン株式会社 A method of manufacturing an organic el display device
KR100541253B1 (en) 1997-02-17 2006-07-10 세이코 엡슨 가부시키가이샤 Display
DE69834395T2 (en) * 1997-09-02 2007-02-08 Seiko Epson Corp. A method for producing an organic electroluminescent device
JP3206646B2 (en) 1998-01-22 2001-09-10 日本電気株式会社 Multicolored light emitting organic el panel and manufacturing method thereof
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
JP4547723B2 (en) * 1998-03-09 2010-09-22 セイコーエプソン株式会社 A method of manufacturing an organic el display device
US7090890B1 (en) 1998-04-13 2006-08-15 The Trustees Of Princeton University Modification of polymer optoelectronic properties after film formation by impurity addition or removal
KR100479759B1 (en) * 1998-04-13 2005-04-06 세이코 엡슨 가부시키가이샤 Information recording method, information reproducing method, recording medium used by the method, information recording device,and information reproducing device
GB9813326D0 (en) 1998-06-19 1998-08-19 Cambridge Display Tech Backlit displays
JP4258860B2 (en) 1998-09-04 2009-04-30 セイコーエプソン株式会社 Device having a light transmission means
WO2000059267A1 (en) 1999-03-29 2000-10-05 Seiko Epson Corporation Composition, method for preparing film, and functional element and method for preparing the same
US7288420B1 (en) * 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
EP1058484B1 (en) 1999-06-04 2015-12-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with an insulating layer
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US6420200B1 (en) 1999-06-28 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
EP1065724B1 (en) 1999-06-28 2007-04-18 Sel Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
EP1071117B1 (en) * 1999-07-23 2013-10-09 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a display device, and apparatus for forming a thin film
JP4226159B2 (en) 1999-08-06 2009-02-18 シャープ株式会社 A method of manufacturing an organic led display
US6830494B1 (en) 1999-10-12 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
US7473928B1 (en) 1999-10-12 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. EL display device and a method of manufacturing the same
JP4827290B2 (en) * 1999-10-13 2011-11-30 株式会社半導体エネルギー研究所 The thin film forming apparatus
US6582504B1 (en) 1999-11-24 2003-06-24 Sharp Kabushiki Kaisha Coating liquid for forming organic EL element
US6696105B2 (en) 2000-02-28 2004-02-24 Semiconductor Energy Laboratory Co., Ltd. Thin film forming device, thin film forming method, and self-light emitting device
JP4601842B2 (en) * 2000-02-28 2010-12-22 株式会社半導体エネルギー研究所 Thin film forming method
EP1132980B1 (en) 2000-03-06 2012-05-09 Semiconductor Energy Laboratory Co., Ltd. Thin film forming method for light emitting devices
CN1905239A (en) 2000-03-27 2007-01-31 株式会社半导体能源研究所 Self-light emitting device and method of manufacturing the same
CN100444698C (en) 2000-03-31 2008-12-17 精工爱普生株式会社 Organic EL device and method of manufacturing thereof
JP2001341296A (en) 2000-03-31 2001-12-11 Seiko Epson Corp Method for forming thin film by ink jet, ink jet unit, organic el element, and method for manufacturing the same
JP4683766B2 (en) * 2000-05-22 2011-05-18 株式会社半導体エネルギー研究所 Active-matrix light-emitting device
US6822629B2 (en) 2000-08-18 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6905784B2 (en) 2000-08-22 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2002083691A (en) 2000-09-06 2002-03-22 Sharp Corp Active matrix driven organic led display unit and its manufacturing method
US7462372B2 (en) 2000-09-08 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and thin film forming apparatus
US6893103B2 (en) 2000-10-17 2005-05-17 Seiko Epson Corporation Ink jet recording apparatus and manufacturing method for functional liquid applied substrate
JP3628997B2 (en) 2000-11-27 2005-03-16 セイコーエプソン株式会社 Method of manufacturing an organic electroluminescent device
JP4021177B2 (en) 2000-11-28 2007-12-12 セイコーエプソン株式会社 Preparation and an organic electroluminescence device and an electronic apparatus of the organic electroluminescent device
US6787063B2 (en) 2001-03-12 2004-09-07 Seiko Epson Corporation Compositions, methods for producing films, functional elements, methods for producing functional elements, methods for producing electro-optical devices and methods for producing electronic apparatus
KR100635037B1 (en) 2001-04-12 2006-10-17 삼성에스디아이 주식회사 Organic electroluminescence device
JP2002343565A (en) 2001-05-18 2002-11-29 Sharp Corp Manufacturing method of organic led display panel, organic led display panel manufactured by the same, and base film and substrate used for the same
US7199515B2 (en) 2001-06-01 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and light emitting device using the element
JP4683772B2 (en) 2001-06-15 2011-05-18 株式会社半導体エネルギー研究所 The method for manufacturing a light emitting device
US7378291B2 (en) 2001-07-06 2008-05-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
JP4766218B2 (en) 2001-07-09 2011-09-07 セイコーエプソン株式会社 A manufacturing method thereof and an organic el array exposure head and an image forming apparatus using the same
KR100543066B1 (en) 2001-08-29 2006-01-20 세이코 엡슨 가부시키가이샤 Electrooptical device and electronic equipment
US20030166311A1 (en) 2001-09-12 2003-09-04 Seiko Epson Corporation Method for patterning, method for forming film, patterning apparatus, film formation apparatus, electro-optic apparatus and method for manufacturing the same, electronic equipment, and electronic apparatus and method for manufacturing the same
US7483001B2 (en) * 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
JP4197117B2 (en) 2001-11-22 2008-12-17 シャープ株式会社 The organic thin film element using a polymer material having a carrier transporting property, a method of manufacturing an organic thin film element, and a wiring
JP3693051B2 (en) 2001-12-20 2005-09-07 セイコーエプソン株式会社 Electro-luminance design program of luminance designing method and an electro-optical device of the electro-optical device, and electronic apparatus
US7199516B2 (en) 2002-01-25 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing thereof
EP1338431A3 (en) 2002-02-08 2003-10-01 Fuji Photo Film Co., Ltd. Visible image receiving material having surface hydrophilicity
EP1352751B1 (en) 2002-03-11 2007-12-19 Seiko Epson Corporation Optical writing head such as organic EL array exposure head, method of manufacturing the same, and image forming apparatus using the same
CN1280107C (en) 2002-05-31 2006-10-18 精工爱普生株式会社 Optical head, image and apparatus employing the same
US6858464B2 (en) 2002-06-19 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
US7204735B2 (en) 2002-07-09 2007-04-17 Semiconductor Energy Laboratory Co., Ltd. Production apparatus and method of producing a light-emitting device by using the same apparatus
JP4225425B2 (en) 2002-09-24 2009-02-18 コニカミノルタホールディングス株式会社 The active matrix type organic el display body manufacturing method and apparatus and an active matrix organic el display body, as well as a manufacturing method and a liquid crystal array of the liquid crystal array, and manufacturing method and apparatus and the color filter substrate of the color filter substrate
CN101694871B (en) * 2002-11-11 2012-12-05 株式会社半导体能源研究所 Process for fabricating light emitting device
JP4089544B2 (en) 2002-12-11 2008-05-28 ソニー株式会社 Method of manufacturing a display device and a display device
US7119826B2 (en) 2002-12-16 2006-10-10 Seiko Epson Corporation Oranic EL array exposure head, imaging system incorporating the same, and array-form exposure head fabrication process
JP4830254B2 (en) 2003-01-23 2011-12-07 セイコーエプソン株式会社 Manufacturing method, and electronic equipment of the organic el device
JP3966283B2 (en) 2003-01-28 2007-08-29 セイコーエプソン株式会社 Emitters and their manufacturing method and apparatus, an electro-optical device and electronic equipment
JP4244697B2 (en) 2003-05-13 2009-03-25 セイコーエプソン株式会社 Display apparatus and method
JP4299059B2 (en) 2003-05-30 2009-07-22 株式会社 日立ディスプレイズ Method of manufacturing the organic electroluminescent display device
JP3994994B2 (en) * 2003-10-23 2007-10-24 セイコーエプソン株式会社 The method of manufacturing an organic el device, organic el device, the electronic device
JP2005270725A (en) 2004-03-23 2005-10-06 Sharp Corp Pattern substrate, manufacturing method for pattern substrate and manufacturing apparatus for pattern substrate
US7411601B2 (en) 2004-08-03 2008-08-12 Seiko Epson Corporation Exposure head
JP4548121B2 (en) 2005-01-14 2010-09-22 セイコーエプソン株式会社 Method of manufacturing a light emitting element
US7307297B2 (en) 2005-02-10 2007-12-11 Japan Science And Technology Agency Organic photodiode and method for manufacturing the organic photodiode
JP4311360B2 (en) 2005-02-25 2009-08-12 セイコーエプソン株式会社 Emitting element, the light emitting device and an electronic device
JP4548153B2 (en) * 2005-03-07 2010-09-22 セイコーエプソン株式会社 A method of manufacturing an organic el display device
US7485023B2 (en) 2005-03-31 2009-02-03 Toppan Printing Co., Ltd. Organic electroluminescent device having partition wall and a manufacturing method of the same by relief printing method
JP2007012504A (en) 2005-07-01 2007-01-18 Toppan Printing Co Ltd Method for manufacturing organic el device, and organic el device
JP4872288B2 (en) 2005-09-22 2012-02-08 凸版印刷株式会社 Organic el device and a manufacturing method thereof
US7595353B2 (en) 2005-09-29 2009-09-29 Chisso Corporation Fluorine-containing photocurable polymer composition
JP2007106428A (en) * 2005-10-11 2007-04-26 Sharp Corp Ink tank, and inkjet applying device
JP2007122914A (en) 2005-10-25 2007-05-17 Sharp Corp Manufacturing method of organic electroluminescence display and manufacturing apparatus used therefor
US7696683B2 (en) 2006-01-19 2010-04-13 Toppan Printing Co., Ltd. Organic electroluminescent element and the manufacturing method
US7546803B2 (en) 2006-01-30 2009-06-16 Toppan Printing Co., Ltd. Letterpress printing machine
WO2007094101A1 (en) 2006-02-14 2007-08-23 Sharp Kabushiki Kaisha Organic electroluminescence device and organic electroluminescence display device
JP4706845B2 (en) 2006-02-15 2011-06-22 凸版印刷株式会社 A method of manufacturing an organic el element
US7880382B2 (en) 2006-03-08 2011-02-01 Toppan Printing Co., Ltd. Organic electroluminescence panel and manufacturing method of the same
US7687390B2 (en) 2006-03-28 2010-03-30 Toppan Printing Co., Ltd. Manufacturing method of a transparent conductive film, a manufacturing method of a transparent electrode of an organic electroluminescence device, an organic electroluminescence device and the manufacturing method
JP2007273094A (en) 2006-03-30 2007-10-18 Toppan Printing Co Ltd Organic electroluminescence element and manufacturing method therefor
WO2007113935A1 (en) 2006-04-05 2007-10-11 Sharp Kabushiki Kaisha Organic electroluminescent display and method for manufacturing same
CN101616947B (en) 2006-12-26 2012-06-06 旭化成电子材料株式会社 Resin composition for printing plate
US7910287B2 (en) 2007-02-14 2011-03-22 Toppan Printing Co., Ltd. Relief printing plate, and method for manufacturing electronic circuit pattern, organic electroluminescence device and organic electronic device by using the same
JP5250981B2 (en) 2007-02-21 2013-07-31 セイコーエプソン株式会社 Manufacturing method and an electronic apparatus of the organic device
WO2008105472A1 (en) * 2007-02-28 2008-09-04 Idemitsu Kosan Co., Ltd. Organic el material-containing solution, method for forming organic el thin film, organic el device comprising organic el thin film, and method for manufacturing organic el display panel
JP4547441B2 (en) 2008-03-31 2010-09-22 パナソニック株式会社 Organic el ink composition and a method of manufacturing
JP2010044118A (en) 2008-08-08 2010-02-25 Sony Corp Display, and its manufacturing method
DE102008045948A1 (en) 2008-09-04 2010-03-11 Osram Opto Semiconductors Gmbh A method for producing an organic radiation-emitting component and organic radiation-emitting component
JP5396976B2 (en) 2008-09-29 2014-01-22 凸版印刷株式会社 Organic el device and a manufacturing method thereof
JP4898850B2 (en) 2009-01-22 2012-03-21 住友化学株式会社 Method of manufacturing an organic electroluminescent device for ink-jet ink and an organic electroluminescence element
WO2012043151A1 (en) 2010-09-27 2012-04-05 凸版印刷株式会社 Relief printing plate for printing and method for manufacturing organic el element using same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US9700908B2 (en) 2012-12-27 2017-07-11 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US9537119B2 (en) 2012-12-27 2017-01-03 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US9755186B2 (en) 2013-12-12 2017-09-05 Kateeva, Inc. Calibration of layer thickness and ink volume in fabrication of encapsulation layer for light emitting device
US9496519B2 (en) 2013-12-12 2016-11-15 Kateeva, Inc. Encapsulation of components of electronic device using halftoning to control thickness
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