TW200421713A - Improved megasonic cleaning efficiency using auto-tuning of an rf generator at constant maximum efficiency - Google Patents

Improved megasonic cleaning efficiency using auto-tuning of an rf generator at constant maximum efficiency Download PDF

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TW200421713A
TW200421713A TW092137672A TW92137672A TW200421713A TW 200421713 A TW200421713 A TW 200421713A TW 092137672 A TW092137672 A TW 092137672A TW 92137672 A TW92137672 A TW 92137672A TW 200421713 A TW200421713 A TW 200421713A
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Taiwan
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output
input
generator
voltage
signal
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TW092137672A
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Chinese (zh)
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TWI292985B (en
Inventor
John Boyd
Andras Kuthi
Michael G R Smith
Thomas W Anderson
William Thie
Robert Knop
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Lam Res Corp
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Priority claimed from US10/360,322 external-priority patent/US6995067B2/en
Priority claimed from US10/359,765 external-priority patent/US7053000B2/en
Priority claimed from US10/360,316 external-priority patent/US6998349B2/en
Priority claimed from US10/360,320 external-priority patent/US7033845B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200421713A publication Critical patent/TW200421713A/en
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Publication of TWI292985B publication Critical patent/TWI292985B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0207Driving circuits
    • B06B1/0223Driving circuits for generating signals continuous in time
    • B06B1/0238Driving circuits for generating signals continuous in time of a single frequency, e.g. a sine-wave
    • B06B1/0246Driving circuits for generating signals continuous in time of a single frequency, e.g. a sine-wave with a feedback signal
    • B06B1/0253Driving circuits for generating signals continuous in time of a single frequency, e.g. a sine-wave with a feedback signal taken directly from the generator circuit
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B2201/00Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
    • B06B2201/70Specific application
    • B06B2201/71Cleaning in a tank

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)

Abstract

A system and method of cleaning a substrate includes a megasonic chamber that includes a transducer and a substrate. The transducer is being oriented toward the substrate. A variable distance d separates the transducer and the substrate. The system also includes a dynamically adjustable RF generator that has an output coupled to the transducer. The dynamically adjustable RF generator can be controlled by a phase comparison of an oscillator output voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator can also be controlled by dynamically controlling a variable DC power supply voltage.

Description

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一、【發明所屬之技術領域】 本發明一般係關於調諧一 法’尤有關用以自動調諧供一 器之方法與系統。 射頻(RF)產生器之系統與方 基板清洗系統用之一RF產生 二、【先前技術】 聲能之使用係為一種高度進步、非接觸的清洗技術, 以在製造、平面顯示器、微機電系統(mems)、微光機電 '、=M0EMS)等等之各種不同的狀態下從例如半導體晶圓 2板移除小微粒。清洗製程一般需要透過液態介質傳輸 二,用以從基板之表面移除微粒,並清洗基板之表面。 =萬赫兹超音波能量一般係在大約7〇〇 kHz(〇7百萬赫 (Hz))至大約!.〇 MHz(包含〇7 〇2與1〇刖幻之頻率範 傳輸介質可以是去離子水或數個基板洗蘇藥 =及其組合之任何一個或多個。聲能透過液態介質之傳 二主要經由來自液態介質中之溶解氣體之氣泡之形成與 =(於此稱為孔钮)、微流、以及在經由改善質量傳送將 =用:為液態介質時之化學反應增強,或提供活化能 促進化子反應’來達成非接觸基板之清洗。 -圖1A係為典型整批基板清洗系統1〇之圖。圖ib 批基板清洗系統1 0之俯視圖。槽j丨裝滿ϋ j他基板洗滌藥品之洗條液16。基板載體去般離子數水個戈 二ί =晶舟盒)支撐一批待被清洗之基板14。一個或多個 換IS18A、18B、18C產生經由洗滌液16傳輸之發射聲能1. [Technical Field to which the Invention belongs] The present invention generally relates to a tuning method ', and more particularly, to a method and system for automatically tuning a device. Radio frequency (RF) generator system and square substrate cleaning system, one of which is used to generate RF. [Previous technology] The use of acoustic energy is a highly advanced, non-contact cleaning technology for manufacturing, flat panel displays, and micro-electromechanical systems. (Mems), Micro Opto-Electro-Mechanical ', = MOEMS), etc., to remove small particles from, for example, a semiconductor wafer 2 board. The cleaning process generally requires transmission through a liquid medium to remove particles from the surface of the substrate and clean the surface of the substrate. = 10,000 Hz ultrasonic energy generally ranges from about 700 kHz (07 million hertz (Hz)) to about! .〇MHz (including the frequency range transmission media of 0007 and 10) can be deionized water or several substrate washing agents = and any one or more of combinations thereof. The transmission of sound energy through the liquid medium Mainly through the formation of bubbles from dissolved gas in the liquid medium (herein referred to as a hole button), microfluidics, and the use of improved mass transfer to improve the chemical reaction when the liquid medium is used, or to provide activation energy Promote chemical reactions' to achieve non-contact substrate cleaning.-Figure 1A is a diagram of a typical batch of substrate cleaning system 10. Figure ib Top view of batch substrate cleaning system 10. Tank j 丨 filled with substrates. Medicine strip washing liquid 16. The substrate carrier is deionized and the water is counted (a crystal boat box) to support a batch of substrates 14 to be cleaned. One or more change of IS18A, 18B, 18C to generate the transmitted sound energy transmitted through the washing liquid 16

200421713200421713

15。經由接觸並定位載體12之定位夾具ha、丨㈣之使用, 基板14與轉換器18人、18β和18C之間的相對位置與距離從 一批基板1 4到另一批基板一般大概是固定的。 具有或不具有適當化學以控制微粒再黏著之發射能量 1 5 係經由孔蝕、聲流、以及提高質量傳送(如果使用洗 滌藥品的話)來達成基板清洗。整批基板清洗製程一般需 要漫長的處理時間,且亦會消耗過多的洗滌藥品16。此 外,難以達成一貫性以及基板對基板之控制。在整批以及 其他基板百萬赫茲超音波製程中,普通都有像「遮蔽 (shadowing)與「熱點(hot sp〇ts)」這樣的情況。遮蔽係 、 由於發射能量1 5之反射及/或相長與相消干涉而產生,且 與多數基板14之附加基板表面區域、處理槽之壁面等化 合。熱點之發生(主要是由於多數轉換器之使用與反射而 導致相長干涉之結果)亦會隨著額外多重基板表面區域而 增加。這些關鍵問題一般藉依賴基板上之聲能之多重反射 之平均效應而獲得處理,其會導致給基板表面較低的平均 功率。為了補償較低的平均功率並提供有效清洗與微粒移 除,係增加給轉換器之功率,藉以增加發射能量1 5並增加 孔餘與聲流’其藉以增加清洗效率。此外,係使用脈動多 | 數轉換器陣列1 8 A、1 8 B與1 8 C (亦即,提供例如打開轉換器 持續20 ms,然後關閉持續1〇 ms之作用周期)。轉換器 1 8 A、1 8 B與1 8 C亦可不一致地被操作(例如,相繼被啟動) 以降低化合反射與干擾。 圖1C係為習知技術之rf供應以提供一個或多個轉換器 ,15. The relative positions and distances between the substrate 14 and the converters 18, 18β, and 18C are generally fixed from one batch of substrates 14 to another batch of substrates by using the positioning jigs ha and ㈣ of the carrier 12. . With or without the proper chemistry to control the emission energy of particulate re-adhesion, substrate cleaning is achieved through pitting, sonic flow, and enhanced mass transfer (if cleaning chemicals are used). The entire batch of substrate cleaning processes generally requires a long processing time and consumes too much cleaning chemicals16. In addition, it is difficult to achieve consistency and substrate-to-substrate control. In the whole batch and other substrate megahertz ultrasonic processes, there are usually situations such as "shadowing" and "hot spots". The shielding system is generated by reflection of the emitted energy 15 and / or constructive and destructive interference, and is combined with the additional substrate surface area of most substrates 14 and the wall surface of the processing tank. The occurrence of hot spots (mainly due to constructive interference due to the use and reflection of most converters) will also increase with additional multiple substrate surface areas. These key issues are typically addressed by relying on the average effect of multiple reflections of sound energy on the substrate, which results in lower average power to the substrate surface. In order to compensate the lower average power and provide effective cleaning and particle removal, the power to the converter is increased to increase the emission energy by 15 and increase the hole residual and acoustic flow ’, which increases the cleaning efficiency. In addition, the pulsating multi-to-digital converter arrays 1 8 A, 1 8 B, and 1 8 C are used (that is, to provide, for example, an on-time for 20 ms and then an off-time period of 10 ms). Converters 1 8 A, 1 8 B, and 1 8 C can also be operated inconsistently (eg, sequentially activated) to reduce combined reflections and interference. Figure 1C is a conventional RF supply to provide one or more converters.

第10頁 200421713 五->發明說明(3) sm、1玄8c之概要圖30。可調整電壓控制振mii(vc〇) 二m將信號33輸出至rf產生器34,產生器34將 係輸出至轉換ΛΛ 之信號35 °信號35 ⑽輸出發射率感測器36監視信號35。轉換器 之數:換!=之正確阻抗會隨著例如載體12中的基板“ 之#夕# #、 0間距以及基板14與轉換器18B之間的距離 之眾多變數而改變。轉拖 工 器1 8 B 0 f # f /奐 確阻抗亦會隨著轉換Page 10 200421713 Five- > Description of the invention (3) Sm, Fig. 30 is a schematic view of Fig. 8c. The adjustable voltage control oscillator mii (vc〇) 2m outputs the signal 33 to the rf generator 34, and the generator 34 outputs the converted signal 35 ° to the signal ΛΛ, and the output signal 36 to the monitor signal 35 of the emissivity sensor 36. Number of converters: change! The correct impedance will change with, for example, the substrate in the carrier 12 "之 # 夕 # #, 0 pitch, and many variables of the distance between the substrate 14 and the converter 18B. Turner 1 8 B 0 f # f / The exact impedance will also change with

:18因為重複使用老化而改變。舉例而言,如果信號 3 «3 3 5具有大約1 μ Η z之瓶、玄 曰1丨+ , ϋ八@ ι i 頻率,則在例如洗滌液1 6之去離 子水質中波長大約為1 5 mm(〇. 〇6〇 圖:a’如果基板14與載體12之位m見 性Ϊ變,如果基板24、24A被旋轉,則阻抗會周期 35之:Γ二之二率由改變頻率,從而改變信號33 : 調整轉換器咖之阻抗。-般:: 18 changed by repeated use aging. For example, if the signal 3 «3 3 5 has a frequency of approximately 1 μ Η z bottle, Xuan Yue 1 丨 +, ϋ @ @ ι i frequency, in the deionized water quality of the washing liquid 16 for example, the wavelength is approximately 1 5 mm (〇.〇〇〇 Figure: a 'If the substrate 14 and the carrier 12 m changes, if the substrate 24, 24A is rotated, the impedance will be cycle 35: Γ two to two rate by changing the frequency, so Change signal 33: Adjust the impedance of the converter.-General:

=為3止5之f率與發射能量15,直到轉= 之最小值表示。一旦已二功號 38,〇 32 一般就不會再被調整, 上執行顯著的修理或維修。 土板Θ洗系統 當轉換麵之阻抗並未被匹配時,從轉換麵發= Is the minimum f rate from 3 to 5 and the emission energy is 15; Once the second work number 38, 032 is generally not adjusted, significant repairs or maintenance are performed. Soil plate Θ washing system When the impedance of the conversion surface is not matched, it is sent from the conversion surface.

200421713 五、發明說明(4) 之部分發射能量1 7(亦即,波)係被反射回至轉換器1 8B。 在轉換器18B之表面上,反射能量1 7會阻礙導致相長與相 消干涉之發射能量1 5。相消干涉降低了發射能量1 5之有效 清洗功率,其乃因為部分發射能量1 5係因反射能量丨7而有 效被抵銷。因此,降低了 RF產生器34之效率。 相長干涉會導致過多能量,其會在被清洗基板1 4之表 面上造成熱點。這些熱點會超過基板1 4之能量閾值並損壞 基板14。圖1D係為典型的轉換器18B。圖1E係為橫越過轉 換器18B之能量分佈圖1〇〇。曲線1〇2係為朝X軸線發射橫越 過轉換器1 8 B之能量曲線。曲線1 〇 4係為朝y軸線發射橫越 過轉換器18B之能量曲線。曲線120係為朝X軸線與y軸線兩 者發射橫越過轉換器18B之複合能量之曲線。朝X軸線與y 軸線兩者發射橫越過轉換器1 8B之複合能量一般可在曲線 120與曲線122之間改變,如已知的變化(例如,基板之位 置 轉換器之老化’以及旋轉基板相對於轉換器之搖擺 等)而使轉換器1 8B之阻抗改變。臨限能量位準T係為對基 板14之損壞閾值。一般而言,RF信號35以及藉由轉換器 1 8B輸出之所產生之發射能量丨5之最大功率係被減少至使 最大的相長干涉導致小於基板1 4之能量閾值T之峰值大小 (亦-即’曲線1 2 〇之峰值)之位準,俾能避免損壞基板1 4。 然而,RF信號35與發射能量1 5之減少的功率增加達成期望 清洗結果所需要的清洗製程時間,在某些實例中,信號Μ 與發射能量15之減少的功率不足以從基板14移除某些目禪 微粒。如所示,有效的發射能量可改變至更加低的位準不200421713 V. Description of the invention (4) Part of the emitted energy 17 (ie, wave) is reflected back to the converter 18B. On the surface of the converter 18B, the reflected energy 17 will hinder the emitted energy 15 which causes constructive and destructive interference. Destructive interference reduces the effective cleaning power of the emitted energy 15 because part of the emitted energy 15 is effectively offset by the reflected energy 丨 7. Therefore, the efficiency of the RF generator 34 is reduced. Constructive interference can cause excessive energy, which can cause hot spots on the surface of the substrate 14 being cleaned. These hot spots can exceed the energy threshold of the substrate 14 and damage the substrate 14. FIG. 1D is a typical converter 18B. Figure 1E is a graph 100 of the energy distribution across converter 18B. The curve 102 is the energy curve emitted across the converter 18 B toward the X axis. Curve 104 is a curve of energy transmitted across converter 18B toward the y-axis. Curve 120 is a curve that emits composite energy across converter 18B toward both the X-axis and the y-axis. The composite energy that is emitted across the converter 18B toward both the X-axis and the y-axis can generally be changed between curve 120 and curve 122, such as known changes (for example, the position of the substrate's aging of the converter 'and the relative rotation of the substrate (Such as the wobble of the converter, etc.) to change the impedance of the converter 18B. The threshold energy level T is a damage threshold for the substrate 14. In general, the maximum power of the RF signal 35 and the emitted energy generated by the converter 18B is reduced to the maximum constructive interference leading to a peak value smaller than the energy threshold T of the substrate 14 (also -That is, the peak value of the curve 1 2 0), to prevent damage to the substrate 14. However, the reduced power of the RF signal 35 and the reduced power of 15 increase the cleaning process time required to achieve the desired cleaning results. In some instances, the reduced power of the signal M and the transmitted energy 15 is not sufficient to remove a certain amount from the substrate 14 Some Muzen particles. As shown, the effective emission energy can be changed to a lower level.

第12頁 200421713 五“發明說明(5) (以曲線1 2 2之谷部表示),以使清洗製程之效果因為有效 能量如此低(大約3 )而嚴格受到影響,因此,導致從大約3 延伸至大約17之能窗(energy window),如依照能量規模 所顯示的。 轉換器1 8 B —般係為例如晶體之壓電元件。由反射能 量1 7所導致的相長與相消干涉亦可將一力量添加至轉換器 18B之表面,其足以使轉換器18B產生對應的反射信號38。 功率感測器36可偵測從轉換器18B反射至RF產生器34之反 射信號38。反射信號38可建設性地或破壞性地阻礙從產 生器34輸出之信號35,以更進一步降低Rj?產生器34之效 率。 蓉於上述說明,吾人需要一種提供RF產生器之增加效 率與發射聲能之減少能窗’並降低基板損壞之可能性之改 善的百萬赫茲超音波清洗系統。 三、【發明内容】 廣義來說’本發明藉由提供一種動態調諧心產生器來 滿足這些需求,此動態調諧RF產生器係經常被調諧以維持 轉換器與來自轉換器之發射能量的共振。吾人應該明白到 本發明可以許多方式被實現,包含作為一製程、一設備、 一系統、電腦可讀取媒體、或一裝置。本發明之數個發明 實施例係說明於下。 一個實施例包含一種動態調整叮產生器至轉換器之瞬 間共振頻率之方法。該方法包括從一振盪器將一RF輸入信Page 12 200421713 Five "Explanation of the invention (5) (represented by the valley part of the curve 1 2 2), so that the effect of the cleaning process is strictly affected because the effective energy is so low (approximately 3), so it extends from approximately Energy window up to about 17, as shown in terms of energy scale. Converters 1 8 B are generally piezoelectric elements such as crystals. The constructive and destructive interference caused by reflected energy 17 is also A force can be added to the surface of the converter 18B, which is sufficient for the converter 18B to generate a corresponding reflected signal 38. The power sensor 36 can detect the reflected signal 38 reflected from the converter 18B to the RF generator 34. The reflected signal 38 can constructively or destructively hinder the signal 35 output from the generator 34 to further reduce the efficiency of the Rj? Generator 34. Based on the above description, we need a way to provide the RF generator with increased efficiency and emitted acoustic energy An improved megahertz ultrasonic cleaning system that reduces the energy window 'and reduces the possibility of substrate damage. III. [Summary of the Invention] In a broad sense, the present invention provides a dynamic tuning heart generator to To meet these requirements, this dynamically tuned RF generator is often tuned to maintain the resonance between the converter and the transmitted energy from the converter. I should understand that the present invention can be implemented in many ways, including as a process, a device, a system , A computer-readable medium, or a device. Several inventive embodiments of the present invention are described below. One embodiment includes a method for dynamically adjusting the instantaneous resonance frequency of a bit generator to a converter. The method includes changing from an oscillation RF input signal

第13頁 200421713Page 13 200421713

五-、發明說明(6) 號輸入至該RF 一第一 壓之一 至一轉 生一頻 之一頻 測 壓。測 壓。將 可包括 將 之步驟 號。 當 信號之 該頻率 先該第 以及如 號不改 器與一 該 號係在 將一比 率控制 相位。 第二相 換器輸 率控制 率控制 量該第 量該第 該頻率 調整該 該頻率 亦可包 產生器。 測量來自 位。來自 入。當該 信號。該 輸入。 一相位可 一相位可 控制信號 頻率控制 控制信號 括結合該 測量該RF輸入信號之一輸入電壓之 该RF產生器之該rf信號輸出之一電 該RF產生器之該rF信號輸出係連接 第一相位不等於該第二相位時,產 頻率控制信號係被施加至該振盪器 包括調整該第一相位之該測量電 包括調整該第二相位之該測量電 施加至該振盪器之該頻率控制輸入 信號。 施加至该振蘆器之該頻率控制輸入 頻率控制信號與一設定點控制信 該第一相位不等 包括:如 號降低該 步驟可 控制信 二相位 果該第 變該振 目標之 第一相 該RF輸 例控制 信號。 於該第 果該第 振盪器 率控制 專於該 率。該 離改變 位與該第二相位 ’則該頻 一相位係 盪器之頻 間的一距 入信號之 仏號與一 每個周 積分控 二相位時,產生 一相位落後該第 ;如果該 加該振盪 位,則該 之該共振 之頻率 信號增 第二相 轉換器 而改變 係被測 期被產 制信號 量,且該 生。該方 之至少一 該頻率控制 二相位,則 第一相位領 器之頻率; 頻率控制信 隨著該轉換 頻率控制信 法亦可包括 施加至該頻V. Description of the invention (6) Input the RF to one of the first voltage to one frequency to one frequency and one frequency to measure voltage. Pressure measurement. Will include the step number. When the frequency of the signal is first and the number is not changed, the number and the number are in phase control of a ratio. The output rate control of the second phase converter is controlled by the amount of the frequency, the frequency, and the frequency. The frequency can also be adjusted by the generator. The measurement is from bits. From into. When the signal. The input. A phase-controllable phase-frequency control signal includes one of the rf signal output of the RF generator combined with the rf signal output of the RF generator which measures an input voltage of the RF input signal and is connected to the first When the phase is not equal to the second phase, a frequency control signal is applied to the oscillator including adjusting the measurement power of the first phase to include the measurement power of adjusting the second phase to the frequency control input of the oscillator signal. The frequency control input frequency control signal applied to the vibrator is different from a set point control signal. The first phase includes: if the number is reduced, this step can control the second phase of the signal. The first phase of the vibration target is changed to the RF. Input control signal. Since the first oscillator rate control is dedicated to that rate. When the separation change bit and the second phase 'then the number of the incoming signal between the frequency of the frequency-phase oscillator and the two phases of the integral control every two weeks, a phase is behind the first; if the plus The oscillating position, the frequency signal of the resonance is increased by a second-phase converter to change the signal quantity produced during the measurement period, and the signal is generated. At least one of the parties, the frequency controls two phases, then the frequency of the first phase collar; the frequency control signal, along with the conversion, the frequency control signal may also include an application to the frequency

200421713 五-發明說明(7) 另一個實施例包含一種提供RF給轉換器之系統。該系 統包含一振盪器、一RF產生器、以及一電壓相位偵測器。 該振盪器具有一頻率控制輸入與一RF信號輸出。該奵產生 器具有連接至該振盪器之該心信號輸出之一輸入以及連接 至該轉換器之一RF產生器輸出。該電壓相位偵測器包含·· 一第一相位輸入,連接至該振盪器之該1^信號輸出;一第 二相位輸入,連接至該RI?產生器輸出;以及一頻率控制信 號輸出,連接至振盪器頻率控制輸入。200421713 Five-Description of Invention (7) Another embodiment includes a system for providing RF to a converter. The system includes an oscillator, an RF generator, and a voltage phase detector. The oscillator has a frequency control input and an RF signal output. The chirp generator has an input to the heart signal output connected to the oscillator and an RF generator output connected to the converter. The voltage phase detector includes a first phase input connected to the 1 ^ signal output of the oscillator, a second phase input connected to the RI generator output, and a frequency control signal output connected. To oscillator frequency control input.

該第一相位輸入可經由一比例縮放裝置而連接至該振 盡器之該RF信號輸出。該第二相位輸入可經由一比例縮放 裝置而連接至該RF產生器輸出。 該頻率控制信號輸出可經由一控制放大器而連接至該 振盪器頻率控制輸入。該控制放大器可包含:一第一輸 入’連接至該頻率控制信號輸出;一第二輸入,連接至一 設定點控制信號;以及一輸出,連接至該振盪器頻率控制 輸入。该RF產生器可以是一種e類rj?產生器。 該轉換器可被配向至一目標,其為距轉換器之一變化 距離。該轉換器可被包含在一百萬赫茲超音波清洗容室The first phase input can be connected to the RF signal output of the oscillator through a scaling device. The second phase input can be connected to the RF generator output via a scaling device. The frequency control signal output can be connected to the oscillator frequency control input via a control amplifier. The control amplifier may include: a first input 'connected to the frequency control signal output; a second input connected to a set point control signal; and an output connected to the oscillator frequency control input. The RF generator may be an e-type rj? Generator. The converter can be oriented to a target, which is a variable distance from the converter. The converter can be contained in a megahertz cleaning chamber

中。該目標可以是一種半導體基板。該RF產生器可在大約 4 0 0- kHz至大約2MHz之範圍内運作。 另一個實施例包含一種轉換器RF源,其包含一電壓控 制振盈器(VC0)、一E類RF產生器、一電壓相位偵測器。該 VC0具有一頻率控制電壓輸入與一輸出。該E類心產生器具 有連接至該VCO輸出之一輸入以及連接至具有一變化阻抗'in. The target may be a semiconductor substrate. The RF generator can operate in the range of about 400-kHz to about 2MHz. Another embodiment includes a converter RF source including a voltage controlled oscillator (VC0), a Class E RF generator, and a voltage phase detector. The VC0 has a frequency control voltage input and an output. The Class E cardiac generator has one input connected to the VCO output and one with a variable impedance '

200421713 五-、發明說明(8) 之名轉換器之一 R F產生器輸出。該電壓相位偵測器包含: 一第一相位輸入,連接至該VC0之該輪出;一第二^相位輸 ^ ’連接至該RF產生器輸出;以及一電壓控制信號輸出, 、、'至由控制放大器連接至該V C 〇頻率控制電壓輸入。該控 制放大器包含:一第一輸入,連接至該電壓控制信號輸 出,一第二輸入,連接至一設定點控制信號;以及一輸 出’連接至該VC0頻率控制電壓輸入。 …一個實施例包含一種基板之清洗方法,其包括以一頻 率f將一RF信號施加至一轉換器。該轉換器係被配向至該 基板i以使該轉換器以該頻率f向該基板放射一聲能。該 基板係相對於該轉換器而移動。該RF信號係被動態調整以 維持該聲能之一共振。 動態調整頻率f可包括在該RF信號之每個周期自動調 整4頻率f。相對於該轉換器移動該基板可包括旋轉該基 板。 忒基板亦可被浸入一洗條液中。該洗務液可以是去離 子水。該洗滌液可包含複數個洗滌藥品之一種或多種。動 態凋整该RF化號以維持該聲能之該共振之該步驟包括維持 施加至該轉換器之該RF信號之一固定電壓。 一RF產生器可將該RF信號施加至該轉換器,而維持施 加至該轉換器之該RF信號之一固定電壓之該步驟包含以下 步驟·測量該RF信號之一第一電壓;比較該第一電壓與一 期望設定點電壓;以及將一控制信號輪入至一可變DC電源 麵200421713 V. One of the name converters of invention description (8) R F generator output. The voltage phase detector includes: a first phase input connected to the round-out of the VC0; a second phase input ^ 'connected to the RF generator output; and a voltage control signal output, ,,' to A control amplifier is connected to this VC frequency control voltage input. The control amplifier includes: a first input connected to the voltage control signal output, a second input connected to a setpoint control signal, and an output 'connected to the VC0 frequency control voltage input. ... one embodiment includes a substrate cleaning method that includes applying an RF signal to a converter at a frequency f. The converter is aligned to the substrate i so that the converter radiates an acoustic energy to the substrate at the frequency f. The substrate is moved relative to the converter. The RF signal is dynamically adjusted to maintain a resonance of the acoustic energy. Dynamically adjusting the frequency f may include automatically adjusting the 4 frequency f at each cycle of the RF signal. Moving the substrate relative to the converter may include rotating the substrate. The substrate can also be immersed in a strip cleaning solution. The washing solution may be deionized water. The washing liquid may include one or more of a plurality of washing medicines. The step of dynamically trimming the RF signal to maintain the resonance of the acoustic energy includes maintaining a fixed voltage of the RF signal applied to the converter. An RF generator can apply the RF signal to the converter, and the step of maintaining a fixed voltage of the RF signal applied to the converter includes the following steps: measuring a first voltage of the RF signal; comparing the first A voltage and a desired setpoint voltage; and a control signal is turned into a variable DC power plane

第16頁 200421713 五發明說明(9) --- 供應部,俾能調整該可變DC電源供應部之一輸出電壓,該 可變DC電源供應部提供!^功率給該^.產 _號以,亥聲能之該共振之該步驟包括動以= 至該轉換器之該R F信號之一頻率f。 一RF產生器可將該評信號施加至該轉換器,且動態調 整施加至該轉換器之該評信號之該頻率f之該步驟包含: 測量施加至該RF產生器之一電源電壓;測量橫越過包含在 該RF產生器中之一輸出放大器之一峰值電壓;當該峰值電 壓不等於該電源電壓之一選擇比率時,產生一頻率控制信 號;以及將該頻率控制信號施加至產生該評信號之一振盪 裔之一頻率控制輸入。 一RF產生器可將該rf信號施加至該轉換器,且動態調 整施加至該轉換器之該RF信號之該頻率f之該步驟包含從 一振盪器將一RF輸入信號輸入至該RF產生器,並放大該RF 產生器中之該RF信號。測量該1^輸入信號之一輸入電壓之 一第一相位,並測量來自該評產生器之該RF信號輸出之一 電壓之一第二相位。當該第一相位不等於該第二相位時, 產生一頻率控制#號。該頻率控制信號係被施加至該振盪 器之一頻率控制輸入。 -另一個實施例包含一種基板之清洗系統,其包含一清 洗容室,該清洗容室包含一轉換器與一基板。該轉換器係 被配向至該基板。一可變距離d使該轉換器與該基板分 離。該系統亦包含:一動態可調整RF產生器,其具有連接 至該轉換器之一輸出;以及一反饋電路,連接至該可調整Page 16 200421713 Fifth invention description (9) --- Supply Department, can not adjust the output voltage of one of the variable DC power supply, the variable DC power supply provides! ^ Power to the ^. 产 _ 号 以The step of the resonance of the Hai sound energy includes moving to a frequency f of the RF signal to the converter. An RF generator may apply the evaluation signal to the converter, and the step of dynamically adjusting the frequency f of the evaluation signal applied to the converter includes: measuring a power supply voltage applied to the RF generator; Crossing a peak voltage of an output amplifier included in the RF generator; generating a frequency control signal when the peak voltage is not equal to a selection ratio of the power supply voltage; and applying the frequency control signal to generating the evaluation signal One of the oscillators is one of the frequency control inputs. An RF generator may apply the rf signal to the converter, and the step of dynamically adjusting the frequency f of the RF signal applied to the converter includes inputting an RF input signal from an oscillator to the RF generator And amplify the RF signal in the RF generator. A first phase of an input voltage of the 1 ^ input signal is measured, and a second phase of a voltage of the RF signal output from the comment generator is measured. When the first phase is not equal to the second phase, a frequency control # is generated. The frequency control signal is applied to a frequency control input of the oscillator. -Another embodiment includes a substrate cleaning system including a cleaning chamber, the cleaning chamber including a converter and a substrate. The converter is aligned to the substrate. A variable distance d separates the converter from the substrate. The system also includes: a dynamically adjustable RF generator having an output connected to the converter; and a feedback circuit connected to the adjustable

第17頁 200421713 五-、發明說明(10) RF產生器之控制輸入。該基板可被旋轉。當該基板被旋 轉時,該距離d改變了來自膽產生器之-RF信號輸出之 大約1/2波長。 4動心可凋整RF產生器可包含具有一控制輸入以及連 接至該RF產生器之一DC輸出之一可變DC電源供應部。該反 ^路可包含-第—比較器,其包含連接至—設^點控制 信號之了第「輸A、連接至該心產生器之心輸出之一第二 輸以及連接至該可調整RF產生器之該控制輸入之一控 制“號輸出。该控制輸入包含在該可變DC電源供應部上之 一電壓控制輸入。 該動L可調整RF產生器可包含一振盪器、連接至該振 古态輸出=一輸出放大器、以及一負載網路。該振盪器具 丄一控制#號輸入與一RF信號輸出。該負載網路係連接在 5亥輪出放大器之一輸出與該“產生器之該輸出之間。該反 饋電路可包含一峰值電壓偵測器與一第二比較器。該峰值 ,,偵,器可被連接橫越過該輸出放大器。該第二比較器 匕3 第一輸入’連接至該可變DC電源供應部之一輸 出;一第四輸入,連接至該峰值電壓偵測器之一輸出;以 及一第二比較器輸出,連接至該可調整RF產生器之該控制 輸入。該控制輸入可包含該振盪器控制信號輸入。 该動態可調整RF產生器可包含一振盪器與連接至該 盪器RF信號輸出之一RF產生器輸入。該振盪器具有一;率: 控制輸入與一RF信號輸出。該反饋電路可包含一電壓相位 偵測器。該電壓相位偵測器可包含··一第一相位輸入,連Page 17 200421713 V. Description of the invention (10) Control input of RF generator. The substrate can be rotated. When the substrate is rotated, the distance d changes about 1/2 the wavelength of the -RF signal output from the bile generator. The attentive adjustable RF generator may include a variable DC power supply having a control input and a DC output connected to the RF generator. The counter circuit may include a first-comparator, which includes a first input A connected to the set-point control signal, a second input connected to the cardiac output of the cardiac generator, and connected to the adjustable RF. One of the control inputs of the generator controls the "No." output. The control input includes a voltage control input on the variable DC power supply section. The movable L adjustable RF generator may include an oscillator, an output state connected to the oscillator, an output amplifier, and a load network. The oscillator has a control # input and an RF signal output. The load network is connected between one output of a 5 ohm output amplifier and the output of the "generator." The feedback circuit may include a peak voltage detector and a second comparator. The peak, detection, A second input can be connected across the output amplifier. The first input of the second comparator 3 is connected to an output of the variable DC power supply; a fourth input is connected to an output of the peak voltage detector. And a second comparator output connected to the control input of the adjustable RF generator. The control input may include the oscillator control signal input. The dynamically adjustable RF generator may include an oscillator and be connected to the One of the RF signal output of the oscillator is an RF generator input. The oscillator has one; rate: control input and an RF signal output. The feedback circuit may include a voltage phase detector. The voltage phase detector may include ·· A first phase input, connected

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號輸出;一第二相位輸入,連接至 -頻率控制信號輸出,連接至該可 輸入。该控制輸入可包含該振盪器 接至該振盪器之該rj?信 該RF產生器輸出;以及 調整RF產生器之該控制 頻率控制電壓輸入。 該動態可 盪器,具有一 器,連接至該 大器之一輸出 包含連接橫越 較器電路。該 供應電壓源; 輸出;以及一 控制輸 該 盪器RF 一電壓 信號輸 接至該 該RF產 調整RF 頻率控 入。該 動態可 信號輸 相位偵 出。該 振盪器 生器輸 產生器 制電壓 調整RF產生器 控制信號輸入 振盈器輸出; 與該RF產生器 過該輸出放大 比較器電路可 一第二輸入, 比較器輸出, 控制輸入可包 調整RF產生器 出之一RF產生 測器。該振盪 電壓相位偵測 之該RF信號輸 出;以及一頻 之該控制輸入 輸入0 可包含:一供應電壓源;一振 與一RF信號輸出; 一負載網路,連接 之該輸出之間。該 值電壓偵 器之一峰 包含:一 連接至該 連接至該 含該振蘯 第一輸入 一輸出放大 在該輸出放 反饋電路可 測器與一比 ’連接至該No. output; a second phase input, connected to the -frequency control signal output, connected to this input. The control input may include the rj? Signal and the RF generator output connected to the oscillator; and the control frequency control voltage input for adjusting the RF generator. The dynamic oscillator has a device connected to one of the amplifiers and the output includes a comparator circuit. The supply voltage source; an output; and a control input RF voltage signal input to the RF output adjusts the RF frequency control. This dynamic can detect the signal output phase. The oscillator generator output generator makes voltage adjustment and the RF generator control signal is input to the oscillator output. The comparator circuit can have a second input through the output amplifier amplifier amplifier. The comparator output and the control input can be adjusted RF. The generator is one of the RF generation detectors. The oscillating voltage phase detection of the RF signal output; and a frequency of the control input input 0 may include: a supply voltage source; a vibration and an RF signal output; a load network connected between the outputs. A peak of the value voltage detector includes: a connection to the connection to the containing the first input, an output amplification at the output amplifier, a feedback circuit, a detector, and a ratio ′ connected to the

峰值電壓偵測器之一 可調整RF 器控制信 可包含一振盪器, 器輸入,而該反饋 器具有一頻率控制 器包含··一第一相 出;一第二相位輸 率控制信號輸出, 。该控制輸入可包 產生器之言J 號輸入。 連接至該拐 電路可包令 輸入與一Rf 位輸入,達 入,連接至 連接至該可 含該振盪器 該轉換器可包含兩個以上的轉換器。該動態可調整RF 產生器可包含兩個以上的動態可調整心產生器,每個動態 可調整RF產生器具有連接至兩個以上的轉換器之其中一個One of the peak voltage detectors is an adjustable RF control signal which may include an oscillator and an input, and the feedback device has a frequency controller including a first phase output and a second phase output control signal output. This control input can include the J input of the generator. Connected to the inverting circuit can include the order input and an Rf bit input, connect to, connect to the can include the oscillator, and the converter can include more than two converters. The dynamically adjustable RF generator may include more than two dynamically adjustable cardiac generators, each dynamically adjustable RF generator having one of two or more converters connected

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五-、發明說明(12) 器,被配向 被配向至該 之一各個輸出。該轉換器可包含:一第一轉換 至該基板之一活化表面;以及一第二轉換器, 基板之一非活性側。 一個實施例包含一種動態調整RF產生器至轉換^ ^ 間共振頻率之方法。該方法包括從一振盪器提供—^ $瞬 信號給該RF產生器以及測量施加至該RF產生器之—带、$入 壓。測量該RF產生器中之一峰值電壓。當該峰值電壓不, 於該電源電壓之一選擇比率時,產生一頻率控制信號。f 頻率控制信號係被施加至該振盪器之一頻率控制輪=。4V. Description of the invention (12) The device is oriented to each output of the one. The converter may include: a first converter to an active surface of the substrate; and a second converter to an inactive side of the substrate. An embodiment includes a method for dynamically adjusting an RF generator to convert an inter-resonant frequency. The method includes providing an instantaneous signal to the RF generator from an oscillator, and measuring the band-in and input voltage applied to the RF generator. Measure one of the peak voltages in the RF generator. When the peak voltage is not a ratio selected from one of the power voltages, a frequency control signal is generated. f A frequency control signal is applied to one of the frequency control wheels of the oscillator. 4

測量該峰值電壓可包括測量該RF輸入信號之每個周_ 之該峰值電壓。測量該峰值電壓可包括測量橫越過包含在 該RF產生器中之該輸出放大器之該峰值電壓。該輸出放大 器可以是一CMOS裝置,且該峰值電壓係等於從該輸出放大 器之一汲極至一源極之一電壓。測量施加至該RF產生器之 該電源電壓可包括調整該測量電源電壓。測量該峰值電壓 亦可包括調整該測量峰值電壓。Measuring the peak voltage may include measuring the peak voltage of each cycle of the RF input signal. Measuring the peak voltage may include measuring the peak voltage across the output amplifier included in the RF generator. The output amplifier may be a CMOS device, and the peak voltage is equal to a voltage from one drain to one source of the output amplifier. Measuring the power supply voltage applied to the RF generator may include adjusting the measured power supply voltage. Measuring the peak voltage may also include adjusting the measured peak voltage.

該峰值電壓與該電源電壓之該選擇比率可以等於大約 3比1以及大約6比1之間的一範圍。具體而言,該峰值電壓 與該電源電壓之該選擇比率可以等於大約4比1或大約3. 6 比1 —。該方法亦可包括將一比例控制信號與一積分控制信 號之至少一施加至該頻率控制信號。該方法亦可包括將來 自該RF產生器之一被放大RF信號輸出施加至一轉換器,該 轉換器被配向至一目標,在該轉換器與該目標之間的一距 離係為一可變距離。The selection ratio of the peak voltage to the power supply voltage may be equal to a range between about 3 to 1 and about 6 to 1. Specifically, the selection ratio of the peak voltage to the power supply voltage may be equal to about 4 to 1 or about 3.6 to 1 —. The method may also include applying at least one of a proportional control signal and an integral control signal to the frequency control signal. The method may also include applying an amplified RF signal output from one of the RF generators to a converter, the converter being oriented to a target, and a distance between the converter and the target being variable. distance.

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個實施例包含一種產 生RF之系 大器、一 。該振盪 放大器係 另 電壓源 電壓偵 輸入與 出。該 生器之 出放大 應電壓 出;以 該RF產 、一振盪器、一 測器以及一比較 一RF信號輸出。 負載網路係連接 一輸出之間。該 器。該比較器電 源;一第二輸入 及一比較 生器輸出 器輸出 亦可連 輸出放 器電路 該輸出 在該輸出放大器 峰值電壓偵測器 路包含:一第一 ’連接至該峰值 ’連接至該振盪 接至一轉換器。 負載網 器具有 連接至 之一輸 係連接輸入, 電壓偵 器控制 包含一供應 路、一峰值 一控制信號 該振盪器輸 出與該RF產 橫越過該輪 連接至該供 測器之一輸 信號輸入。 當一電源電壓不等於由該峰值電壓偵測器輸出之一峰 值電壓之一選擇比率時,該控制信號可從該比較器輪出被 輸出。該峰值電壓偵測器可包含與一第二電容器串聯連接 之一第一電容器,以及與該第二電容器並聯連接之一個二 極體。該比較器之該第一輸入係經由一第一比例縮放裝置 而連接至該供應電壓源。該峰值電壓偵測器可包含一第二 比例縮放裝置。該比較器可包含一運算放大器。該振盪器 可在大約400 kHz至大約2MHz之一範圍内運作。 另一個實施例包含一種RF產生器系統,其包含一供應 電壓源、具有一控制電壓輸入與一輸出之一電壓控制振盪 器(VC0)、以及連接至該vc〇輸出之一輸出放大器。亦包免 連接在/亥輸出放大器之一輸出與該RF產生器之一輸出之間 的一 E類負載網路。一峰值電壓偵測器係連接橫越過該輸 出放大器。一比較器電路包含:一第一輸入,連接至該供One embodiment includes a system for generating RF, one. The oscillator amplifier is another voltage source voltage sense input and output. The output of the generator is amplified by a voltage output; the RF output, an oscillator, a detector, and a comparison RF signal are output. The load network is connected between one output. The device. The comparator power; a second input and a comparator output can also be connected to the output amplifier circuit. The output in the output amplifier peak voltage detector circuit includes: a first 'connected to the peak' connected to the The oscillation is connected to a converter. The load net device has an input connection to an input system. The voltage detector control includes a supply circuit, a peak, and a control signal. The oscillator output and the RF output cross the wheel and are connected to an input signal input to the device. . When a power supply voltage is not equal to a selection ratio of a peak voltage output by the peak voltage detector, the control signal can be output from the comparator by turns. The peak voltage detector may include a first capacitor connected in series with a second capacitor, and a diode connected in parallel with the second capacitor. The first input of the comparator is connected to the supply voltage source via a first scaling device. The peak voltage detector may include a second scaling device. The comparator may include an operational amplifier. The oscillator can operate in a range of approximately 400 kHz to approximately 2 MHz. Another embodiment includes an RF generator system including a supply voltage source, a voltage controlled oscillator (VC0) having a control voltage input and an output, and an output amplifier connected to the vc0 output. It also includes a Class E load network that is connected between one output of the / H output amplifier and one output of the RF generator. A peak voltage detector is connected across the output amplifier. A comparator circuit includes: a first input connected to the supply

200421713 五-、發明說明(14) 應電壓源;一箆-私λ _ 切 一 第—輸入,連接至該峰值電壓偵測器之一 _ 較益輸出,連接至該VC0控制電壓輸入,♦一别 „監不等於由該峰值電壓偵測器輸出之—峰值-約3 · 6比1之產ndb 壓之大 屮一 μ #革 一控制電壓係從該比較器輸出被輪 出一轉換器係連接至該RF產生器輸出。 , :::施例包含一種維持固定輸入電壓 法。该方法句冬w π止_ W状益之方 1 Μ Μ ^ 步驟:從一RF產生器施加一RF _ ft s 该轉換益;測量該RF信號 Μ。唬至200421713 V. Description of the invention (14) The voltage source to be applied; a 箆 -private λ _ cut a first-input, connected to one of the peak voltage detectors _ better output, connected to the VC0 control voltage input, ♦ Don't monitor it equal to the output from the peak voltage detector-peak-about 3 · 6 to 1 production ndb voltage is larger than a μ # control voltage system from the comparator output is turned out a converter system Connected to the RF generator output., ::: The embodiment includes a method for maintaining a fixed input voltage. This method is used to describe the formula of the formula 1 Μ Μ ^ ^ Step: Apply an RF _ from an RF generator ft s the conversion benefit; measure the RF signal M. to

盥一期望讯中科+广 Ά 弟電壓,比較該第一電壓 ^瑞徂_叹以及將一控制信號輸入至一可變DC 厭Λ二…部,俾能調整該可變DC電源供應部之一輸出電 ί該部提供該DC功率給瓣產生器測 里/弟電壓可包括調整該測量第一電壓。 π ^第電壓係為該轉換器之一阻抗之一函數。該轉 為之该阻抗可隨著該轉 轉換 改變。 符狹态興目‘之間的一距離變化而 定二m壓與該期望設定點電壓之該步驟包括決 二制仏號。邊控制信號係大約等於該 望設定點電壓之間的一差異。 电!。哀期 例控:t ί: 5DC電源供應部之該輸出電壓可包括將-比 "一積/刀控制之至少一施加至該控制信號。談方法 轉換器配向至一目#,在該轉換器與;“標 之間的一距離係為一可變距離。 生器另施例包含—種產生rf之系統,其包含-叮產 可邊DC電源供應部、以及一比較器。該rf產生器I hope that the voltage of Zhongke + Guangxi, compare the first voltage ^ Rui _ _ sigh and input a control signal to a variable DC power supply, can adjust the variable DC power supply. An output unit that provides the DC power to the lobe generator to measure the voltage may include adjusting the measured first voltage. The π ^ th voltage is a function of one of the impedances of the converter. The impedance for which this transition can change with the transition. The step of changing the distance between the narrow-banded constellation ′ and the two-m voltage and the desired set-point voltage includes the second sign. The edge control signal is approximately equal to a difference between the desired setpoint voltages. Electricity! . Grief period Example control: t 5: The output voltage of the 5DC power supply section may include applying at least one of a product / knife control to the control signal. Talking about the converter converter orientation to a head #, a distance between the converter and the "standard is a variable distance. Another embodiment of the generator includes-a system to generate rf, which contains-biting can be DC Power supply unit and a comparator. The rf generator

第22頁 200421713 五發明說明(15) 具有連接至該轉換器之^一輸入之一 RF輸出。該可變%電源 供應部具有一控制輸入與連接至該R f"產生器之一 D [輸出。 該比較器包含:一第一輸入,連接至一設定點控制信號; 一第二輸入,連接至該RF產生器RF輸出;以及一控制信號 輸出’連接至該可變DC電源供應部上之一電壓控制輸入。 该第二輸入係藉由一電壓比例縮放裝置而連接至r F產 生器RF輸出。該比較器亦可包含一比例控制輸入與一積分 控制輸入之至少一。該RF產生器可以是一E類rf產生器。 該RF信號之該電壓係為該轉換器之一阻抗之一函數。該轉 換器之該阻抗隨著該轉換器與一轉換器目標之間的一距離 變化而改變。 該轉換器可被包含在一百萬赫茲超音波清洗容室中。 5亥轉換器目標可以是一半導體基板。該比較器可以是一運 算放大器。 另一個實施例包含一種轉換器RF源,其包含一E類訐 產生器、一可變DC電源供應部、以及一比較器。該E類心 產^器具有連接至一百萬赫茲超音波清洗容室中之該百萬 赫,超音波轉換器之一輸入之_RF輸出。該可變%電源供 應部具有一控制輸入與連接至該RF產生器之一 Dc輸出。該 比較器包含:一第一輸入,連接至一設定點電壓源;一第 一輸入’連接至該RF產生器RF輸出;以及一控制信號輸 出’連接至該可變DC電源供應部上之一電壓控制輸入。 本發明提供大幅縮短清洗處理時間之優點,其乃因為 較佳的功率聲能可在不損壞被清洗基板的情況下被使用Page 22 200421713 Fifth invention description (15) RF output with one of the inputs connected to the converter. The variable% power supply section has a control input and is connected to one of the R f " generators D [output. The comparator includes: a first input connected to a setpoint control signal; a second input connected to the RF generator RF output; and a control signal output 'connected to one of the variable DC power supply sections Voltage control input. The second input is connected to the r F generator RF output by a voltage scaling device. The comparator may also include at least one of a proportional control input and an integral control input. The RF generator may be an E-type rf generator. The voltage of the RF signal is a function of an impedance of the converter. The impedance of the converter changes with a distance between the converter and a converter target. The converter can be contained in a megahertz ultrasonic cleaning chamber. A 5H converter target may be a semiconductor substrate. The comparator can be an operational amplifier. Another embodiment includes a converter RF source, which includes a type E chirp generator, a variable DC power supply, and a comparator. The Class E cardiac device has an _RF output connected to one of the megahertz, one of the ultrasonic transducers in a one megahertz ultrasonic cleaning chamber. The variable% power supply section has a control input and a Dc output connected to one of the RF generators. The comparator includes: a first input connected to a set-point voltage source; a first input 'connected to the RF generator RF output; and a control signal output' connected to one of the variable DC power supply sections Voltage control input. The invention provides the advantage of significantly shortening the cleaning processing time, because the better power acoustic energy can be used without damaging the substrate being cleaned

200421713 五-·、發明說明(16) (例如’沒有聲能「熱點」會產生)。由於施加至基板之過 多聲能’本發明藉以減少被損壞基板之數目。 自動調諧RF產生器亦可自動調整製程變化,例如不同 的清洗化學劑、基板之不同位置等,藉以提供更彈性盥強 健的清洗製程。 ^ 本發明之其他實施樣態與優點將配合顯示例如本發明 之原理之附圖而從下述詳細說明得以更顯清楚。 四、【實施方式】 現在將說明自動並動態調整施加至轉換器之“信號之 數個例示實施例。熟習本項技藝者將明白到本發明可在不 需要於此所提出之某些或所有具體細節的情況下被實施。 如上所述,增加基板清洗系統之清洗效果、效率以及 產能速率,同時降低損壞基板之可能性是非常重要的。、言 ,需求係因連續縮小之裝置尺寸與多數清洗系統係進展 單一基板清洗系統之事實而加劇。 ^圖2A與28顯示依據本發明之一個實施例之一個動態的 單一基板清洗系統200。圖2A顯示此動態的單一基板清〜 系統2 0 0之側視圖。圖2 B顯示此動態的單一基板清、先系系 20 0之俯視圖。基板20 2係被浸入裝在清洗容室2^内的= 條液204中。洗滌液204可以是去離子水(])1水)或其他木^ 技藝所熟知的清洗化學劑及其組合。 、 貝 200421713 五-、發明說明(17) 俾能在將對基板202進行清洗製程時,可使基板2〇2旋轉 (例如,朝方向20 9A旋轉)。邊緣滾輪2〇8A、208B與208C之 一個或多個可被驅動(例如朝方向2〇9B驅動),俾/能朝方向 209A軛轉基板2〇2。基板202可以高達大約5〇〇 RpM之速率 被旋轉。 〇轉換器210亦被包含成為清洗容室20 6之一部份。轉換 器210可以是例如晶體之壓電元件,其可將^信號22〇轉換 成發射至洗滌液2 0 4之聲能2 1 4。轉換器2 1 〇可以是由例如 壓電陶瓷、鉛鍅鈦酸鹽、壓電石英、鎵磷酸鹽之壓電材料 所構成,其中壓電材料係接合至例如陶瓷、碳化石夕、不銹 鋼或鋁、或石英之諧振器。 如圖2B所示,轉換器21〇可明顯小於基板2〇2。較小的 轉換器可以更便宜地被製造,且亦可在從較小的轉換器 210發射之發射能量214衝擊之基板2〇2之較小區域中提^供 改善控制。基板2〇2之活化表面218(亦即,其上具有主動 元件,活性元件之表面)一般係面向轉換器21、〇 /然而,在 某些實施例中,活化表面218可以位在轉換器21〇對面之基 板2 0 2之側面上。 當基板202旋轉經過轉換器210時,三個邊緣滾 、2〇8B、20 8C維持基板202與轉換器21〇距離大約一段 口疋距離dl。距離dl可以在只有幾公釐至多達大約 100 mm或更多之範圍内。距離dl係被選為匹配轉換器 抗之距離。在一個實施例中,距離“係被選為發射能 ^ 之頻率之共振距離。或者,可選擇發射能量21 4之頻 200421713 五·、發明說明(18) 率’因此距離d 1係為共振距離。在任何一個實施例中,於 共振情況下,最小反射能量216係從基板202反射回到轉換 器210。如上所述,反射能量2 16會妨礙發射能量214,其 會降低RF信號220之功率效率,並會降低對基板202之清洗 效果(例如,干擾圖案)。 然而’基板202會略微「搖擺」,以使基板202與轉換 器2 1 0之間的距離會在基板2 〇 2旋轉通過轉換器2 1 〇時,在 第一距離dl與第二距離d2之間改變。第一距離dl與第二距 離d2之間的差異可以高達大約〇· 5 mm( 0. 02 0吋)或甚至更 大。雖然改良的邊緣滾輪2〇8A、20 8B、208C與其他類似技 術可能將基板2 0 2與轉換器21 0距離維持一段更一致的距離 d 1 ’但改良的邊緣滾輪無法保證一段絕對固定的距離d j, 因此仍會產生距離dl之變化。又,基板2〇2與轉換器210之 間的距離同樣可為了其他理由而改變(例如將基板2 〇 2配置 在邊緣滾輪208A、208B、208C之内等)。如以下所將更詳 ,說明的,基板2 〇 2與轉換器2 1 〇之間的距離之變化會嚴格 衝擊清洗系統2 〇 〇之性能與效率。 轉換器210係連接至RF產生器212。圖2C係為依據本發 明之一個實施例之使用於例如上述圖2A與⑼所說明的百萬 赫兹超音波清洗系統200中之自動調諧rf產生器系統之方 去操作25 0之流程圖。在操作255中,RF產生器提供RF信號 22〇給轉換器21〇。心信號220可具有大約40 0 kHz至大約 2MHz之間的頻率,但一般係在大約7〇〇 kHz至大約1 MHz之 間。從轉換器210發射之高頻率聲能214之波長,在洗滌液200421713 V.-Description of the invention (16) (for example, 'no hot spots' will be generated without sound energy). Because of too much acoustic energy applied to the substrate ', the present invention reduces the number of damaged substrates. The auto-tuning RF generator can also automatically adjust process variations, such as different cleaning chemicals, different positions of the substrate, etc., to provide a more flexible and robust cleaning process. ^ Other aspects and advantages of the present invention will be apparent from the following detailed description in conjunction with the accompanying drawings showing principles of the present invention, for example. 4. [Embodiments] Several exemplary embodiments of the "signal" applied to the converter automatically and dynamically adjusted will now be described. Those skilled in the art will appreciate that the present invention may be implemented without some or all of the present invention. The specific details are implemented. As mentioned above, it is very important to increase the cleaning effect, efficiency, and production rate of the substrate cleaning system, while reducing the possibility of damaging the substrate. In short, the demand is due to the continuous reduction in device size and most The fact that the cleaning system is a single substrate cleaning system is aggravated. ^ Figures 2A and 28 show a dynamic single substrate cleaning system 200 according to an embodiment of the present invention. Figure 2A shows this dynamic single substrate cleaning system ~ system 2 0 A side view of the dynamic single substrate cleaning system 200 is shown in FIG. 2B. The substrate 20 2 system is immersed in the strip liquid 204 installed in the cleaning chamber 2 ^. The washing liquid 204 can be removed. Ionized water (]) 1 water) or other cleaning chemicals and their combinations well known in the art., 200421713 V.-Description of the invention (17) 俾 Can be carried out on the substrate 202 During the cleaning process, the substrate 200 can be rotated (for example, in the direction of 20 9A). One or more of the edge rollers 208A, 208B, and 208C can be driven (for example, in the direction of 209B), 俾 / The substrate 202 can be yoke-turned in the direction 209A. The substrate 202 can be rotated at a rate of about 500 RpM. The converter 210 is also included as part of the cleaning chamber 206. The converter 210 can be, for example, a crystal The piezoelectric element can convert the ^ signal 22 to the acoustic energy 2 1 4 emitted to the washing liquid 204. The converter 2 1 can be made of, for example, piezoelectric ceramics, lead-titanate, piezoelectric quartz And a gallium phosphate piezoelectric material, wherein the piezoelectric material is bonded to a resonator such as ceramic, carbide, stainless steel or aluminum, or quartz. As shown in FIG. 2B, the converter 21 can be significantly smaller than the substrate 2 〇2. Smaller converters can be manufactured more cheaply and also provide improved control in a smaller area of the substrate 202 that is impacted by the emitted energy 214 emitted from the smaller converter 210. The substrate 2 〇2 的 Active surface 218 (that is, there is an active element, active element The surface of the component is generally facing the converter 21, 0 / However, in some embodiments, the activation surface 218 may be located on the side of the substrate 2 0 2 opposite to the converter 21 0. When the substrate 202 rotates past the converter 210 At the time, the three edge rolls, 20B, 20C, and 20C maintain the distance between the substrate 202 and the converter 21 about a distance dl. The distance dl can be in the range of only a few millimeters to as much as about 100 mm or more. Distance dl is selected as the distance to match the converter impedance. In one embodiment, "distance" is selected as the resonance distance of the frequency of the emitted energy ^. Alternatively, the frequency of the emitted energy 21 4 may be selected. 200421713 V. Description of the invention (18) The rate ′ is therefore a distance d 1 which is a resonance distance. In any embodiment, in the case of resonance, the minimum reflected energy 216 is reflected from the substrate 202 back to the converter 210. As described above, the reflected energy 2 16 will hinder the emitted energy 214, which will reduce the power efficiency of the RF signal 220 and reduce the cleaning effect (e.g., interference patterns) on the substrate 202. However, the 'substrate 202' will be slightly "swayed" so that the distance between the substrate 202 and the converter 2 10 will be between the first distance dl and the second distance d2 when the substrate 2 is rotated through the converter 2 1 0. Between changes. The difference between the first distance dl and the second distance d2 may be as high as about 0.5 mm (0.020 inch) or even greater. Although the improved edge rollers 208A, 20 8B, 208C and other similar technologies may maintain a more consistent distance d 1 ′ between the substrate 2 0 and the converter 2 10, the improved edge rollers cannot guarantee an absolutely fixed distance. dj, so there will still be a change in distance dl. In addition, the distance between the substrate 200 and the converter 210 may be changed for other reasons (for example, the substrate 202 is disposed within the edge rollers 208A, 208B, 208C, etc.). As will be described in more detail below, a change in the distance between the substrate 2 02 and the converter 2 1 0 will strictly impact the performance and efficiency of the cleaning system 2 0 0. The converter 210 is connected to the RF generator 212. Fig. 2C is a flow chart of the method of operating a 250 Hz auto-tuning rf generator system used in, for example, the megahertz cleaning system 200 illustrated in Figs. 2A and 上述, according to an embodiment of the present invention. In operation 255, the RF generator provides an RF signal 22o to the converter 21o. The heart signal 220 may have a frequency between about 400 kHz and about 2 MHz, but is typically between about 700 kHz and about 1 MHz. The wavelength of the high-frequency sound energy 214 emitted from the converter 210 is in the washing liquid.

200421713 五一、發明說明(19) 20 4γ中長度大約為ι·5 ιηπι(〇·〇6〇忖)。 在操作260中,至目標(例如基板202 )之距離會隨著目 標相對於轉換器2 1 〇移動而改變。當距離(!丨改變時,反射 能量2 1 6之數量亦會改變,其乃因為當距離d 1改變時,發 射能量2 1 4未必在共振中(亦即,轉換器2 1 〇之阻抗是失配 的)。在操作2 70中,係自動並動態調諳rf產生器2丨2,俾 月b經常凋譜RF信號220,以在距離d 1改變時修正任何阻抗 失配。 因為發射能量214之波長大約為h 5 mmCO. 060吋),所 以只有0. 50 mm( 0.020吋)之移動能導致顯著的阻抗變化, 藉以產生例如50%之多的電壓變化以及在大約25%與〗〇〇% 間的功率變化。在沒有自動調諧RF產生器以補償d〗之變化 的情況下,必須將發射能量214之峰值能階減少至基板2〇2 之能量吸收能力(能量間值)未超過之足夠低的數值,俾 避免峰值發射能量2 1 4損壞基板2 〇 2。 自動°周°自Μ產生器2 1 2可被自動調諧以經由變化法則 來補償距離dl之變動。扁一徊杳# t ⑷ . 在個貫施例中,偵測峰值電壓, 器212維持於RF信號22〇之阻抗最佳化頻率。 在另一個貫施例中,維持電壓之相 ^之阻抗最佳化頻率。在又另一個實施^號電 阻抗最佳化。許多實施例亦可與 皁自動/周#RF產生器系統結合使用。 圖3係為依據本發明之一個實施 器系統30 0之方塊圖。白叙^比立」目勁凋咕W屋生 自動调# RF產生器3 〇 2提供反饋控制 200421713 五-、發明說明(20) 信號給電壓控制振盪器(Vc〇)3〇6,俾能調整從vc〇 3〇6輸 出之VCO RF信號310之頻率。VC0 3〇6亦可被包含成為RF產 生器302之一部分。Dc電源供應部312係被包含在RF產生器 302中’並提供DC功率以供!^產生器3〇2中之vc〇 RF信號 310之放大用。自動調諧RF產生器3〇2包含在RF產生器3〇2 之輸入部分中之電感器314。放大vc〇 RF信號31〇之一個或 多個放大器320亦被包含在μ產生器302中。 在一個實施例中,放大器32〇係為CMOS,而VCO RF信 號310係被施加至閘極6。汲極D係連接至DC偏壓導執(bias rai 1 ) 322 ’而源極s係連接至接地電位導執324。至源極 (峰值Vds)偵測器3 2 6之峰值電壓沒極係連接橫越過放大器 320之汲極〇與源極s端子,俾能擷取至放大器32〇之源極之 峰值電壓汲極。200421713 May Day, Description of Invention (19) 20 4γ The length is approximately ι · 5 ιηπι (〇 · 〇〇〇〇〇〇). In operation 260, the distance to the target (such as the substrate 202) changes as the target moves relative to the converter 2 10. When the distance (! 丨 changes, the amount of reflected energy 2 1 6 also changes, because when the distance d 1 changes, the emitted energy 2 1 4 is not necessarily in resonance (that is, the impedance of the converter 2 1 〇 is (Mismatched). In operation 2 70, the rf generator 2 丨 2 is automatically and dynamically adjusted, and the month b often decays the RF signal 220 to correct any impedance mismatch when the distance d 1 changes. Because the transmitted energy The wavelength of 214 is approximately h 5 mmCO. 060 inches), so only a movement of 0.50 mm (0.020 inches) can cause significant impedance changes, thereby generating, for example, as much as 50% of the voltage change and between about 25% and 〇〇 Power variation between 0%. In the case that there is no automatic tuning of the RF generator to compensate for the change in d, the peak energy level of the emission energy 214 must be reduced to a sufficiently low value that the substrate's energy absorption capacity (inter-energy value) does not exceed, 俾Avoid damaging the substrate 2 02 with the peak emission energy 2 1 4. The auto-circle auto-generator 2 1 2 can be automatically tuned to compensate for variations in the distance dl via a law of change. Bian Yilu 杳 # t ⑷. In one embodiment, the peak voltage is detected, and the device 212 is maintained at the impedance-optimized frequency of the RF signal 22 °. In another embodiment, the impedance optimization frequency of the phase of the sustain voltage is maintained. In yet another implementation, electric impedance ^ is optimized. Many embodiments may also be used in conjunction with the soap auto / week #RF generator system. Fig. 3 is a block diagram of an implement system 300 according to the present invention. "Bai Xu ^ Bi Li" with great energy W House students automatic tuning # RF generator 3 〇 2 provides feedback control 200421713 V.-Description of the invention (20) Signal to the voltage controlled oscillator (Vc〇) 3 06 Adjust the frequency of the VCO RF signal 310 output from vc0306. VC0 306 can also be included as part of the RF generator 302. The Dc power supply unit 312 is included in the RF generator 302 'and provides DC power for amplification of the vc RF signal 310 in the generator 302. The auto-tuning RF generator 302 includes an inductor 314 in the input section of the RF generator 302. One or more amplifiers 320 that amplify the vc RF signal 31 are also included in the µ generator 302. In one embodiment, the amplifier 32o is CMOS, and the VCO RF signal 310 is applied to the gate 6. The drain D is connected to a DC biasing guide (bias rai 1) 322 'and the source s is connected to a ground potential guide 324. The peak voltage to the source (peak Vds) detector 3 2 6 is connected across the drain 0 of the amplifier 320 and the source s terminal, and cannot capture the peak voltage drain of the source of the amplifier 32 0. .

, 放大器320之輸出係連接至E類負載網路330之輸入。E 類負載網路3 3 0係為熟習本項技藝者所熟知之用以執行r ρ 源(亦即RF產生器302 )與RF負載(亦即轉換器33 2 )之間的大 規模阻抗匹配功能之普通元件。E類負載網路3 3 〇 一般包含 LC網路。E類負載網路33〇之輸出係連接至對轉換器 輪入。 、。 抑^圖4係為依據本發明之一個實施例之自動調諧μ產生 器系統300在RF產生器30 2正將RF信號220提供給轉換器332 f之方法操作400之流程圖。在操作405中,DC電源、電壓係 $比較器裝置340所測量或偵測。分壓器網路342亦可被包 含在内,以將從DC電源供應部312連接至比較器裝置34◦之The output of the amplifier 320 is connected to the input of a class E load network 330. Class E load network 3 3 0 is used to perform large-scale impedance matching between r ρ source (ie RF generator 302) and RF load (ie converter 33 2), which are well known to those skilled in the art. Functional ordinary components. Class E load network 3 3 〇 Generally includes LC network. The output of the class E load network 33 is connected to the converter wheel. . FIG. 4 is a flowchart of a method operation 400 of an auto-tuning μ generator system 300 according to an embodiment of the present invention at the RF generator 302, which is providing the RF signal 220 to the converter 332f. In operation 405, the DC power source and voltage are measured or detected by the comparator device 340. A voltage divider network 342 may also be included to connect the DC power supply 312 to the comparator device 34.

200421713200421713

各個電壓之振幅調整或減少至比較器裝置34〇可用的 準。比例、微分與積分控制亦可被包含在比較器裝 内,因此可選擇控制信號之改變速度與數量。 & 在操作410中,峰值vds係由峰值vds偵測器326所 並被施加至比較器裝置340之第二輸入。峰值L偵測器 亦可包含電路,以將從峰值Vds偵測器326連接至比較器裝 置340之電壓之振幅調整或減少至比較器裝置34〇可用的位 準。 ’The amplitude of each voltage is adjusted or reduced to the level available to the comparator device 34. Proportional, derivative, and integral control can also be included in the comparator device, so the speed and number of control signal changes can be selected. & In operation 410, the peak vds is applied by the peak vds detector 326 and applied to the second input of the comparator device 340. The peak L detector may also include circuitry to adjust or reduce the amplitude of the voltage connected from the peak Vds detector 326 to the comparator device 340 to a level available to the comparator device 34. ’

舉例而吕’ DC電源供應部3 1 2可能輸出2〇 〇 VDC,而比 較器装置340能夠比較5 VDC信號,因此分壓器網路342可 將DC電源電壓從200 VDC調整成5 VDC之電壓(表示比較器 裝置340之2 0 0 VDC)。同樣地,峰值Vds偵測器3 26亦可包含 例如分壓器網路之比例縮放裝置,俾能使施加至比較器裝 置340之實際峰值vds電壓大約為5 VDC。 在操作4 1 5中,比較器裝置3 4 0比較峰值Vds與源自d C電 源供應部3 12之DC電源電壓。如果DC電源電壓係為期望比 例之峰值Vds,則沒有修正信號從比較器裝置被輸出,而方 法操作繼續進行回到上述操作4〇5中。For example, the DC power supply unit 3 1 2 may output 2000 VDC, and the comparator device 340 can compare 5 VDC signals, so the voltage divider network 342 can adjust the DC power supply voltage from 200 VDC to 5 VDC. (Indicates 200 VDC of comparator device 340). Similarly, the peak Vds detector 326 may include, for example, a scaling device of a voltage divider network, so that the actual peak vds voltage applied to the comparator device 340 is approximately 5 VDC. In operation 4 1 5, the comparator device 3 4 0 compares the peak Vds with the DC power supply voltage originating from the d C power supply section 3 12. If the DC power supply voltage is the peak value Vds of the desired ratio, no correction signal is output from the comparator device, and the method operation continues to return to the above operation 405.

或者’如果DC電源電壓並非期望比例之峰值%3,則方 法操作繼續進行至操作4 2 〇。在操作4 2 0中,對應的修正信 :虎係從比較器裝置340被輸出至VCO 306以調整VCO輸出信 號3 1 0之頻率,而方法操作繼續進行回到上述操作4 0 5中。 修正信號可將VCO RF信號310之頻率調整至依所需之較高 或較低頻率。Or 'if the DC power supply voltage is not the peak% 3 of the desired ratio, the method operation continues to operation 4 2 0. In operation 4 2 0, the corresponding correction signal is output from the comparator device 340 to the VCO 306 to adjust the frequency of the VCO output signal 3 1 0, and the method operation continues to return to the operation 4 0 5 described above. The correction signal can adjust the frequency of the VCO RF signal 310 to a higher or lower frequency as required.

第29頁 200421713Page 29 200421713

DC電源電壓與峰值yds之期望比例係取決於π產生器 3〇2與轉換器3 32中之各種不同的組件之特別值,以及可能 ^含訂產生器302與轉換器332之系統(例如上述圖2之基板 清洗系統2 0 0 )。在一個實施例中,期望比例係在大約3 : i 至大約6 : 1之範圍内,其中峰值I係為比Dc電源電壓更高 的電壓、。在一個實施例中,期望比例大約為4 : 1,而更明 確大約為3· 6 : 1,其中峰值Vds大約等於DC電源電壓之大約 3 · 6 倍。 圖5 A係為依據本發明之一個實施例之峰值l偵測器 3 2 6之不意圖。連續連接的電容器5 0 2、5 0 4係橫越過放大 器320之沒極D與源極s而連接。二極體5〇6係與電容器5〇4 並聯連接。在操作上,電容器5 〇 2將被放大評信號之每個 周期之峰值Vds連接至電容器504。電容器504儲存從放大器 320輸出之被放大RF信號之每個周期的峰值L。二極體5〇6 操取峰值vds,並經由峰值Vds端子將峰值Vds連接至比較器裝 置340。 圖5B係為依據本發明之一個實施例之由峰值電壓偵測 器326所偵測的峰值電壓之波形圖55〇。當放大器裝置 3 2 0正在執行時’因為只有少數壓降橫越過放大器3 2 〇,所 以峰值電壓偵測器3 2 6並未偵測到太多電壓。當放大器停 止執行時’接著,釋放儲存於RF產生器3〇2與負載網路33() 之電感器與電容器中的電流,藉以產生如由峰值電壓偵測 器326所偵測到的電壓波形552、5 5 4、556。放大器320係 被設計成以在橫越過放大器3 2 〇之電壓(Vds)降至零時,放The desired ratio of the DC power supply voltage to the peak yds depends on the particular values of the various components in the π generator 302 and the converter 332, and the system that may include the generator 302 and the converter 332 (such as the above) The substrate cleaning system 200 in FIG. 2). In one embodiment, the desired ratio is in the range of about 3: i to about 6: 1, where the peak I is a higher voltage than the Dc power supply voltage. In one embodiment, the desired ratio is approximately 4: 1, and more specifically approximately 3.6: 1, where the peak Vds is approximately equal to approximately 3.6 times the DC power supply voltage. FIG. 5A is a schematic diagram of the peak value detector 3 2 6 according to an embodiment of the present invention. The continuously connected capacitors 5 0 2 and 5 0 4 are connected across the terminal D and the source s of the amplifier 320. The diode 506 is connected in parallel with the capacitor 504. In operation, the capacitor 502 connects the peak Vds of each cycle of the amplified evaluation signal to the capacitor 504. The capacitor 504 stores a peak value L of each cycle of the amplified RF signal output from the amplifier 320. The diode 506 operates on the peak vds and connects the peak Vds to the comparator device 340 via the peak Vds terminal. FIG. 5B is a waveform diagram 55 of the peak voltage detected by the peak voltage detector 326 according to an embodiment of the present invention. When the amplifier device 3 2 0 is executing 'because there are only a few voltage drops across the amplifier 3 2 0, the peak voltage detector 3 2 6 does not detect too much voltage. When the amplifier stops executing, then, the current stored in the inductor and capacitor of the RF generator 30 and the load network 33 () is released to generate a voltage waveform as detected by the peak voltage detector 326 552, 5 5 4, 556. The amplifier 320 series is designed to discharge when the voltage (Vds) across the amplifier 3 2 0 drops to zero.

第30頁 200421713Page 30 200421713

路係受轉換器332之共振之任何改變(例如,美 相對於轉換器33 2之任何移動)馬變,、士此於* ^ 土板 ^ ^330 ^ ^ ,χ ^ ^ ^ ^ J;;5 52 ^ ^ ^ ^ ^ ^ 320/開始執行,從而建立一個調諧放大電路。調諧放 =4時合Λ大1^2〇係*為一個相當調言皆_類放大器且波 Α生。§脫離共振時’轉換器332可具有容抗或感 ^^以導致容抗或感抗的增加,其使Ε類負載網路33〇失 调。失調Ε類負載網路330導致具有太高的峰值電壓ν】或 太低的峰值電壓V3之波形552或556。The road system is subject to any changes in the resonance of the converter 332 (for example, any movement of the beauty relative to the converter 33 2), and this is the result of * ^ soil plate ^ 330 330 ^ ^, χ ^ ^ ^ J; 5 52 ^ ^ ^ ^ ^ ^ 320 / Start execution to build a tuned amplifier circuit. Tuning amplifier = 4 when combined Λ large 1 ^ 2〇 series * is a fairly tune-up class amplifier and wave A. § When out of resonance, the converter 332 may have capacitive reactance or inductance ^^ to cause an increase in capacitive reactance or inductance, which causes the Class E load network 33 to be out of regulation. The offset class E load network 330 results in a waveform 552 or 556 with a peak voltage V3 that is too high or a peak voltage V3 that is too low.

广由實驗與計鼻’吾人已發現峰值電壓係為轉換 益332之共振之函數,而峰值L相較於所施加的冗偏壓具 有係為RF產生電路302之組件之函數之共振比率。舉例而 言,在一般RF產生器中,與源自Dc電源供應部之%偏壓比 ,而言,比率大約為4 .·ι之峰值電壓,或以不同方式來 況源自D C電源供應部3 1 2之偏壓大約4倍的峰值v表示轉 換器332係在共振中。 & ’ 圖6係為依據本發明之一個實施例之自動調譜μ產生 裔系統6 0 0之方塊圖。從VCO 306輸出之RF信號31〇之電壓 之相位Ρ1係與輸入至轉換器332之電壓之相位Ρ2作比較。 如果電壓相位Ρ1與Ρ2並未匹配,則將修正信號施加至^〇 3 06之頻率控制輸入。rf產生器系統6〇〇包含以產生器 6 0 2。RF產生器6 0 2可以是熟習本項技藝者所熟知之任何型 式之RF產生器。相位偵測器6 0 4包含兩個輸入β 〇 6、6 〇 8。 第一與第二輸入606、608亦可包含各自的計量電路61〇、Through extensive experiments and nose calculations, we have found that the peak voltage is a function of the resonance of the conversion gain 332, and the peak L has a resonance ratio that is a function of the components of the RF generating circuit 302 compared to the applied redundant bias. For example, in a general RF generator, compared with the% bias ratio derived from the Dc power supply, the ratio is a peak voltage of about 4 ·· ι, or it is derived from the DC power supply in different ways. A peak value v of about 4 times the bias voltage of 3 1 2 indicates that the converter 332 is in resonance. & 'Fig. 6 is a block diagram of an auto-spectrum mu generating system 600 according to an embodiment of the present invention. The phase P1 of the voltage of the RF signal 31 0 output from the VCO 306 is compared with the phase P2 of the voltage input to the converter 332. If the voltage phases P1 and P2 do not match, a correction signal is applied to the frequency control input of ^ 〇3 06. The rf generator system 600 includes a generator 602. The RF generator 602 can be any type of RF generator familiar to those skilled in the art. The phase detector 604 contains two inputs β 〇 6 and 608. The first and second inputs 606, 608 may also include respective metering circuits 61,

第31頁 200421713 五-、發明.說明(24) 61 2 (例如,分壓器網路 P1與相位P2)調整至;}^目# # Γ :、測到的信號(例如相位 w α正主相位偵測器6 〇 4可 器604可以是熟習本項技 勺位準。相位偵測 測器,其可输比較支各 =之相位们則器比較輸出RF信號22〇之5電就之血相^。習知技 =。、測言式已顯*出比較電壓相㈣射2可更簡電^之相 成园7且/a供/A要的信號,據此用以調整VC〇 3°6 ° -条Lnt為據發明之一個實施例之自動調諧RF產生 裔糸統600之方法操作之流程圖。在操作7〇5中,將來自Page 31, 200421713 V. Invention. Explanation (24) 61 2 (for example, voltage divider network P1 and phase P2) are adjusted to;} ^ 目 # # Γ:, the measured signal (for example, phase w α positive main Phase detector 604 and 604 can be familiar with the level of this technique. Phase detection detector, which can input the phase of each branch =, then the device compares the output RF signal of 22 to 5 of the electrical phase. ^. Conventional know-how =., The test formula has been shown * the comparison voltage phase projection 2 can be more simplified ^ the phase into the garden 7 and / a for / A required signal, which is used to adjust VC0 ° The 6 ° -strip Lnt is a flowchart of the method operation of the method for automatically tuning the RF generation system 600 according to one embodiment of the invention. In operation 705, the

VC0 306之輸入RF信號310施加至RF產生器6〇2,且rf產生 器602將輸入RF信號31 〇予以放大並將被放大的心信號22〇 連接至轉換器3 3 2。 在操作710中,第一輸入6〇6將從VCO 3 06輸出之RF信 號3 1 0之電壓之第一相位(p 1 )連接至相位偵測器6 〇 4。在操 作715中’第二輸入608將輸入至轉換器332之信號之電壓 之第二相位(P2)連接至相位偵測器604。The input RF signal 310 of VC0 306 is applied to the RF generator 6 02, and the rf generator 602 amplifies the input RF signal 31 0 and connects the amplified heart signal 22 0 to the converter 3 3 2. In operation 710, the first input 606 is connected to the phase detector 604 of the first phase (p 1) of the voltage of the RF signal 3 1 0 output from the VCO 3 06. In operation 715 ', the second input 608 connects the second phase (P2) of the voltage of the signal input to the converter 332 to the phase detector 604.

在操作7 2 0中,相位偵測器比較相位p 1與相位p 2以決 定相位P1是否匹配相位P 2。圖8 A - 8 C顯示依據本發明之一 個實施例之三例在相位P1與P2之間的關係圖。在圖8A中, 圖8~0 0顯示相位P1領先相位P 2 (例如,相位p 1峰值位於時間 T1,而相位P2峰值位於後來的時間T2)。這表示轉換器332 之阻抗並未被匹配,且轉換器332係將反射信號222施加進 入RF產生器602。 在圖8B中,圖820顯示相位P1落後相位P2(例如,相位In operation 7 2 0, the phase detector compares the phase p 1 with the phase p 2 to determine whether the phase P1 matches the phase P 2. 8A-8C show the relationship between the phases P1 and P2 according to three examples of an embodiment of the present invention. In FIG. 8A, FIGS. 8 to 0 0 show that the phase P1 leads the phase P 2 (for example, the peak of the phase p 1 is located at the time T1 and the peak of the phase P2 is located at the later time T2). This means that the impedance of the converter 332 is not matched, and the converter 332 applies the reflected signal 222 to the RF generator 602. In FIG. 8B, graph 820 shows that phase P1 is behind phase P2 (e.g., phase

第32頁 200421713 五-、發明說明(25) P2峰值位於時間T1,而相位P1峰值位於後來的時間T2)。 這表示轉換器3 3 2之阻抗並未被匹配·,且轉換器3 3 2又將反 射信號222施加進入RF產生器602。由轉換器332輸出之反 射信號可建設性地或破壞性地阻礙從RF產生器6 0 2輸出之 信號。 在圖8C中,圖850顯示相位P1等於相位P2(例如,相位 P1與相位P 2峰值兩個都位於時間T1 )。這表示轉換器3 3 2之 阻抗係被匹配,且轉換器3 3 2並未將任何反射信號施加進 入RF產生器602。 如果在操作720中相位P1與相位P2係相等,則方法操 作在操作7 〇 5繼續(重複)。然而,如果在操作7 2 〇中相位p 1 與相位P 2並不相等,則方法操作繼續進行至操作7 3 〇。在 操作730中,適當的控制信號係被施加sVC〇 3〇6之頻率控 制輸入以據此調整RF信號310之頻率,而方法操作於操作 7/5繼續(重複)。施加至vc〇 3〇6之頻率控制輸入之控制信 ,可將頻率調整成較高頻率,以因應相位p丨領先相位p 2之 f月况或者,施加至VC0 30 6之頻率控制輸入之控制信號 可將頻率調整成較低頻率,以因應相位ρι落後相位“之情 …,周諧RF產生器系統6〇〇亦可包含控制放大器62〇 , ς : q由相位偵測器6〇4將控制信號輸出調整成正確 :控:vc0 30V控制放大關亦可包含-設定點輸 測Γ ^放大态620可結合設定點輸入與來自相位偵 " 拴制信號輸入。依此方式,VCO RF信號310可藉由Page 32 200421713 V. Explanation of the invention (25) The peak value of P2 is located at time T1, and the peak value of phase P1 is located at the later time T2). This means that the impedance of the converter 3 3 2 is not matched, and the converter 3 3 2 applies the reflected signal 222 to the RF generator 602 again. The reflected signal output by the converter 332 can constructively or destructively block the signal output from the RF generator 602. In FIG. 8C, the graph 850 shows that the phase P1 is equal to the phase P2 (for example, the peaks of the phase P1 and the phase P2 are both located at the time T1). This means that the impedance of the converter 3 3 2 is matched, and the converter 3 3 2 does not apply any reflected signal to the RF generator 602. If phase P1 and phase P2 are equal in operation 720, the method operation continues (repeats) at operation 705. However, if the phase p 1 and the phase P 2 are not equal in operation 7 2 0, the method operation continues to operation 7 3 0. In operation 730, an appropriate control signal is applied to the frequency control input of sVC0306 to adjust the frequency of the RF signal 310 accordingly, and the method operation continues (repeats) at operation 7/5. The control signal applied to the frequency control input of vc〇3〇6 can adjust the frequency to a higher frequency in response to the monthly condition of phase p 丨 leading phase p 2 or the control of the frequency control input applied to VC0 30 6 The signal can be adjusted to a lower frequency in order to respond to the situation that the phase lags behind the phase…, the harmonious RF generator system 600 can also include a control amplifier 62o, and the phase detector 60 The control signal output is adjusted to be correct: control: vc0 30V control amplifier can also include-setpoint input measurement Γ ^ Amplified state 620 can combine setpoint input and phase detection " tether signal input. In this way, VCO RF signal 310 available by

第33頁 200421713 五-、發明說明(26) 该設定點而被選擇,然後藉由相位偵測器6 〇 4之控制信號 輸出可自動調整所選擇的設定點。- 上述圖3至8 C所說明之系統與方法可以以非常高的校 正速度^自動調諧RF產生器302、60 2 (例如,在輸入評信號 3 1 〇之母個周期會導致後來的R F信號3 1 〇之頻率與輸出r 信 號220之修正)。因此,輸入Rj?信號3 1 〇之頻率可在基板202 每次旋轉期間譬如被校正多次,藉以更加正確控制施加至 基板202之聲能214。 舉例而s ’如果基板202每分鐘旋轉60次(60 RPM)(亦 即’每秒旋轉1次)且RF信號310大約為1 MHz,則在基板 202每次旋轉期間RF信號310之頻率可被調整每秒大約一百 萬次(亦即,每微秒一次)。這種增加控制施加至基板2〇2 之聲能2 1 4意味著平均能量可以是非常接近發射能量2丨4之 最小能量谷部與最大能量峰值。因此,較高的平均能量可 被施加至基板2 〇 2,藉以大幅地縮短清洗製程時間並改善 清洗效果。 ° 圖9係為依據本發明之一個實施例之自動調諧”產生 器糸統9 0 0之方塊圖。此系統包含連接至r f產生器β q 2之輸 入之VCO 3 0 6。可變DC電源供應部9 02係連接至RF產生器 6 0 2.,並提供DC功率給RF產生器用以放大來自VCO 306之RF 信號310。RF產生器6 0 2之輸出係連接至轉換器332。 一般習知技術之聲能清洗系統集中在維持對轉換器 332之固定淨功率輸入(亦即,RF信號220之傳輸功率減去 反射信號2 2 2之反射功率)。經由實驗,吾人已發現到如果Page 33 200421713 V. Description of the invention (26) The set point is selected, and then the selected set point can be automatically adjusted by the control signal output of the phase detector 604. -The system and method described in Figures 3 to 8C above can auto-tune the RF generators 302, 60 2 at very high calibration speeds (e.g., the mother cycle of the input evaluation signal 3 1 0 will cause subsequent RF signals 3 1 〇 frequency and output r signal 220 correction). Therefore, the frequency of the input Rj? Signal 3 1 0 can be corrected, for example, multiple times during each rotation of the substrate 202, thereby more accurately controlling the acoustic energy 214 applied to the substrate 202. For example, s 'If the substrate 202 rotates 60 times per minute (60 RPM) (ie,' 1 rotation per second) and the RF signal 310 is approximately 1 MHz, the frequency of the RF signal 310 during each rotation of the substrate 202 can be The adjustment is approximately one million times per second (that is, once every microsecond). This increased control of the acoustic energy 2 1 4 applied to the substrate 2 0 means that the average energy can be a minimum energy valley and a maximum energy peak very close to the emitted energy 2 4. Therefore, a higher average energy can be applied to the substrate 202, thereby greatly reducing the cleaning process time and improving the cleaning effect. ° Fig. 9 is a block diagram of an auto-tuning generator system 9 0 0 according to an embodiment of the present invention. This system includes a VCO 3 0 6 connected to the input of an rf generator β q 2. Variable DC power supply The supply unit 9 02 is connected to the RF generator 6 0 2 and provides DC power to the RF generator to amplify the RF signal 310 from the VCO 306. The output of the RF generator 60 2 is connected to the converter 332. General practice The sound energy cleaning system of the prior art focuses on maintaining a fixed net power input to the converter 332 (ie, the transmission power of the RF signal 220 minus the reflected power of the reflected signal 2 2 2). Through experiments, we have found that if

第34頁 200421713Page 34 200421713

電壓維持為固定電壓’則從轉換器奶輸出之 發射此里214之振幅貫質上是固定的·。又,將rf俨號22〇之 低於基板m之能量間值限制之固定^,保 以免受損^ ’同時亦允許最大的聲能214被施加至 圖10係為依據本發明之-個實施例之自動調諧RF產生 益系統90 0之方法操作之流程圖。在操作1〇〇5中,RF產生 器602將RF信號輸出至轉換器332。在操作1〇1〇中,測量rf 信號輸出至轉換器332之電壓並將其連接至比較器9〇4。When the voltage is maintained at a fixed voltage, the amplitude of the emission from the converter milk 214 here is qualitatively fixed. In addition, rf 俨 No. 22 is fixed below the energy limit of the substrate m ^ to prevent damage ^ 'At the same time also allows the maximum sound energy 214 to be applied to Figure 10 is an implementation according to the present invention For example, the flowchart of the method operation of the automatic tuning RF generating system 900. In operation 105, the RF generator 602 outputs an RF signal to the converter 332. In operation 1010, the voltage of the rf signal output to the converter 332 is measured and connected to the comparator 904.

在操作1015中,比較器9〇4比較來自心產生器6〇2之叮 信號輸出之電壓與期望設定點電壓。如果輸出電壓等於期 望設定點電壓,則方法操作繼續回到操作〗〇丨〇。或者,如 果輸出電壓並不等於設定點電壓,則方法操作繼續進行至 操作1 0 3 0。 在操作1 03 0中,比較器904將控制信號輸出至位於可 變DC電源供應部902上之控制輸入。舉例而言,如果輸出 電壓太高(亦即,大於期望設定點電壓),則控制信號將減 少從可變DC電源供應部902之DC電壓輸出,藉以降低產生 在RF產生器602内之放大之增益,藉以降低藉由心產生器 6 0 2·之RF信號輸出之振幅。比例、微分與積分控制亦可被 包含在比較器904内,因此可選擇控制信號之改變速度與 數量。 計量電路90 6亦可被包含在内,用以將來自rf產生器 6 0 2之電壓輸出調整至更容易與設定點信號作比較之位In operation 1015, the comparator 904 compares the voltage of the bit signal output from the cardiac generator 602 with the desired setpoint voltage. If the output voltage is equal to the desired setpoint voltage, the method operation continues to operation 〖〇 丨 〇. Alternatively, if the output voltage is not equal to the set-point voltage, the method operation continues to operation 1 0 3 0. In operation 1030, the comparator 904 outputs a control signal to a control input on the variable DC power supply section 902. For example, if the output voltage is too high (ie, greater than the desired setpoint voltage), the control signal will reduce the DC voltage output from the variable DC power supply 902, thereby reducing the amount of amplification generated in the RF generator 602. Gain to reduce the amplitude of the RF signal output by the cardiac generator 6 0 2 ·. Proportional, derivative, and integral control can also be included in the comparator 904, so the speed and number of control signal changes can be selected. Metering circuit 90 6 can also be included to adjust the voltage output from rf generator 6 0 2 to a position that is easier to compare with the setpoint signal

第35頁 200421713 五、發明說明(28) 準。舉例而言,計量電路906可將2 00 V RF信號調整至5 V,以供與5 V設定點信號作比較。計量電路9 〇 6可包含一 分壓器。計量電路9 06亦可包含一整流器以將從rf產生器 602輸出之RF信號220之電壓整流成DC電壓,以供與DC設定 點信號作比較。 如上所述,上述圖3至8C所說明之方法可以以非常高 的校正速度自動調諧RF產生器30 2、6 02 (例如,RF信號310 之每一些周期調諧一次)。反之,圖9與10所說明之系統與 方法亦可自動調譜R F產生器6 〇 2,但是以比圖3至8 C所說明 的略微較慢的速率調諧,可是仍然比轉換器332之阻抗由 於基板2 0 2之運動產生可能的改變來得快。圖9與丨〇所說明 的系統與方法略微較慢,其一部分由於包含在可變DC電源 供應部9 0 2中之遲滯。 圖9與1 0所說明之系統與方法可與上述圖3至8 c所說明 ,一個或多個系統與方法結合被使用。如此,圖9與1〇所 ,明之系統與方法可用以提供調諧RF產生器之非常寬廣的 範®給轉換器332之動態共振使用,而上述圖3至%所說明 之系統與方法可被使用以提供調諧RF產生器之非常微小的 控制與調整。 ^圖11係為依據本發明之一個實施例之百萬赫茲超音波 模組11 0 〇之圖。百萬赫茲超音波模組丨丨〇 〇可以是一種例如 在共同擁有的美國專利申請號1 0/2 59,023所說明之材料之 ,萬赫茲超音波模組,此專利名稱為「百萬赫茲超音波基 板處理模組(Megasonic Substrate ProcessingPage 35 200421713 V. Description of Invention (28). For example, the metering circuit 906 can adjust the 200 V RF signal to 5 V for comparison with a 5 V setpoint signal. The metering circuit 906 may include a voltage divider. The metering circuit 906 may also include a rectifier to rectify the voltage of the RF signal 220 output from the rf generator 602 into a DC voltage for comparison with the DC setpoint signal. As described above, the method illustrated in FIGS. 3 to 8C described above can automatically tune the RF generators 30 2, 6 02 at a very high correction speed (for example, the RF signal 310 is tuned once every some period). Conversely, the system and method illustrated in FIGS. 9 and 10 can also automatically tune the RF generator 6 〇2, but tune at a slightly slower rate than that illustrated in FIGS. 3 to 8C, but still have a higher impedance than the converter 332 Possible changes due to the movement of the substrate 2 02 come quickly. The systems and methods illustrated in Figures 9 and 〇 are slightly slower, partly due to the hysteresis included in the variable DC power supply section 902. The systems and methods illustrated in Figures 9 and 10 may be used in conjunction with one or more of the systems and methods illustrated in Figures 3 to 8c above. Thus, the systems and methods shown in Figures 9 and 10 can be used to provide a very broad range of tuning RF generators to the dynamic resonance of the converter 332, while the systems and methods described in Figures 3 to% above can be used To provide very fine control and tuning of the tuned RF generator. ^ FIG. 11 is a diagram of a megahertz ultrasonic module 1 100 according to an embodiment of the present invention. Megahertz ultrasound module 丨 丨 〇〇 may be a material such as the one described in commonly-owned U.S. Patent Application No. 10/2 59,023. 1. sonic substrate processing module

第36頁 200421713Page 36 200421713

Module)」,申請日為2002年9月26日,其全部於此為所有 目的而列入參考資料。 百萬赫茲超音波模組11 〇 〇包含一基板處理槽1 1 〇 2 (以 下以槽1102表示),與一槽密封蓋11〇4(以下以密封蓋11〇4 表示)°密封蓋百萬赫茲超音波轉換器11〇8與槽百萬赫兹 超音波轉換器1106係分別被安置在密封蓋11 04上以及在槽 II 0 2中’並提供百萬赫茲超音波能量以供同時處理基板 III 0之活性與背部表面。基板丨丨丨〇係被安置在複數個驅動 輪1112中,並利用基板穩定臂/輪丨114而被固定在適當位 置。於一實施例中,係利用驅動裝置112〇與定位桿1122來 % 安置基板穩定臂/輪1114,用以打開與關閉穩定臂/輪丨丨14 來接收、固定、並釋放在百萬赫茲超音波模組〗丨〇 〇中待被 處理之基板111 0。密封蓋1 1 〇 4可利用抬高並降低密封蓋 1 1 0 4而使槽1 1 〇 2維持靜止之驅動裝置系統(未顯示)而被置 於打開或關閉位置。或者,可移動槽1 1 〇 2以與密封蓋11 〇 4 配合。 於一貫施例中’基板穩定臂/輪1 1 1 4係被設計成用以 朝水平方向固定並支撐基板丨丨丨0以供處理,並允許基板 111 0之旋轉。在其他實施例中,係朝垂直方向對基板丨丨丨〇 · 執衍基板處理。在處理期間,驅動輪1丨丨2接觸基板丨i 〇與 旋轉基板111 0之周邊邊緣。基板穩定臂/輪丨丨丨4可包含一 自由旋轉輪以允許基板1 1 1 〇旋轉,同時朝水平方向支撐基 板 111 0 〇 一旦將基板Π10設置於槽11〇2中,槽11〇2就會裝滿包 ·Module ", with an application date of September 26, 2002, which is hereby incorporated by reference for all purposes. The megahertz ultrasonic module 11 〇 includes a substrate processing tank 1 1 〇2 (hereinafter referred to as the slot 1102), and a slot sealing cover 1104 (hereinafter referred to as the sealing cover 1104). The Hertz Ultrasonic Converter 1108 and the Slot Megahertz Ultrasonic Converter 1106 are respectively placed on the sealing cover 11 04 and in the slot II 0 2 'and provide the Megahertz ultrasonic energy for simultaneous processing of the substrate III. 0 activity and back surface. The substrate 丨 丨 丨 〇 is placed in a plurality of driving wheels 1112, and is fixed in place by the substrate stabilizer arm / wheel 114. In one embodiment, the driving device 112 and the positioning rod 1122 are used to% set the substrate stabilizer arm / wheel 1114 to open and close the stabilizer arm / wheel 丨 丨 14 to receive, fix, and release the Mega-Hertz Ultrasonic Sonic module 〖丨 〇〇 the substrate to be processed 111 0. The seal cover 1 1 04 can be placed in the open or closed position by a drive system (not shown) that raises and lowers the seal cover 1 104 and keeps the groove 1 10 2 stationary. Alternatively, the groove 11 2 can be moved to fit the sealing cover 1 104. In the conventional embodiment, the 'substrate stabilization arm / wheel 1 1 1 4 series is designed to fix and support the substrate 丨 丨 丨 0 for processing in a horizontal direction, and allow the substrate 111 0 to rotate. In other embodiments, the substrate is processed in a vertical direction. During processing, the driving wheels 1 丨 丨 2 contact the peripheral edges of the substrate 丨 i 0 and the rotating substrate 111 0. The substrate stabilizing arm / wheel 丨 丨 丨 4 may include a free rotating wheel to allow the substrate 1 1 〇 to rotate, and at the same time support the substrate 111 0 〇 Once the substrate Π10 is set in the groove 110, the groove 11〇2 Will be full of bags

第37頁 200421713Page 37 200421713

五-、發明說明(30)V. Description of the invention (30)

含去離子(D I )水,或依所期望的處理化學之處理流體。一 旦封閉的百萬赫茲超音波模組丨丨〇〇裝滿期望的處理流體, ,將基板111 0浸入其中,就可藉由槽百萬赫茲超音波轉換 器1106(導引百萬赫茲超音波能量對抗面向槽百萬赫茲超 曰波轉換斋1106之基板111〇之表面),以及藉由密封蓋百 萬赫兹超音波轉換器11 〇 8 (導引百萬赫茲超音波能量對抗 面向欲封盍百萬赫茲超音波轉換器1 1 Q 8之基板1 1 1 Q之表 面)達成基板111 0之百萬赫茲超音波處理。關於沈入在處 =化學中之基板1110,驅動輪1112使基板111〇旋轉以確保 k越過基板1 1 1 0之活性與背部面兩者之整個表面之完全與 均句的處理。於一實施例中,提供驅動馬達丨丨丨6以經由機 械連接器111 8 (例如,驅動皮帶、齒輪、鍵輪與鏈條等)來 驅動驅動輪111 2。 如上述圖3 - 1 0所說明的自動調諧RF產生器系統可被連 接至密封蓋轉換器11 〇 8與槽轉換器丨丨〇 6之其中一個或兩 個’俾能在基板1 1 1 0旋轉時,使各個轉換器丨丨〇 8、丨丨〇 6為 了各個轉換器11 0 8、1 1 〇 6之動態阻抗而被固定並自動調 諧。 圖1 2係為依據本發明之一個實施例之橫越過轉換器之 能量分佈圖1 20 0 °相較於習知技術之以曲線12〇與122顯示 之能窗而言’自動調諧產生器會導致在曲線丨2丨〇與曲線 1 2 1 2之間更加狹小的能窗丨2 〇 2。因為能窗丨2 〇 2係更加狹 小’所以可朝上移動能窗使其更接近基板之能量閾值T, 藉以提供更有效的聲能清洗製程。Deionized (D I) water, or a treatment fluid according to the desired treatment chemistry. Once the closed megahertz ultrasonic module is filled with the desired processing fluid, the substrate 111 10 is immersed in it, and the megahertz ultrasonic converter 1106 can be used to guide the megahertz ultrasonic wave. The energy counteracts the surface of the substrate 111 × facing the slot megahertz ultrasonic converter 1106), and the megahertz ultrasonic converter 11 〇8 (guides the megahertz ultrasonic energy to face the desire to seal) by sealing the cover The surface of the substrate 1 1 Q 8 of the megahertz converter 1 1 Q 8) achieves the megahertz ultrasonic processing of the substrate 111 0. Regarding the substrate 1110 immersed in = chemistry, the driving wheel 1112 rotates the substrate 111 ° to ensure that k crosses the activity of the substrate 1 1 10 and the entire surface of the back surface is completely and uniformly treated. In one embodiment, a driving motor 丨 丨 6 is provided to drive the driving wheel 111 2 via a mechanical connector 111 8 (for example, a driving belt, a gear, a key wheel and a chain, etc.). The auto-tuning RF generator system as explained in the above Fig. 3-10 can be connected to one or both of the sealed cover converter 11 and the slot converter 丨 丨 〇 can be on the substrate 1 1 1 0 When rotating, each converter 丨 丨 〇8, 丨 丨 〇6 is fixed and automatically tuned for the dynamic impedance of each converter 108, 1 10. Fig. 12 is the energy distribution across the converter according to an embodiment of the present invention. Fig. 120 ° Compared with the conventional energy window shown by curves 12 and 122, the 'auto-tuning generator will This results in a narrower energy window 丨 2 〇 2 between the curve 丨 2 丨 and the curve 1 2 1 2. Because the energy window is more narrow, the energy window can be moved upward to bring it closer to the energy threshold T of the substrate, thereby providing a more efficient acoustic energy cleaning process.

第38頁 200421713 五一、發明說明(31) 如於此結合本發明之說明所 約」意指+/- m。舉例而言,片1五用「的^專門用語厂大 225與275之間的範圍。吾人將更雄°一「大約250」表示在 1 〇之操作表示的指令並未被要求要按二j,到以圖4、7與 行,且以這些操作表示之所有處理對杏::二順序來執 〜王对只現本發明可能不是 必要的。Page 38 200421713 51. Description of the invention (31) As used herein in conjunction with the description of the invention "means" means +/- m. For example, film 1 uses the special term ^ to expand the range between 225 and 275. I will be even more powerful. An "approximately 250" means that the instruction expressed in the operation of 10 is not required to press two. To all the processes shown in Figs. 4, 7 and the row, and represented by these operations, it is not necessary to implement the present invention.

雖然為了清楚理解之目的已相當詳細說明上述發明, 但吾人將明白到可此在以下申晴專利範圍之範脅内實行某 些改變與修改。因此,本實施例係被視為例示的而非限制 的,且本發明並未受限於於此所提供之細節,但可能在以 下申請專利範圍之範疇與等效設計之内變化。Although the above-mentioned invention has been described in considerable detail for the purpose of clear understanding, I will understand that certain changes and modifications can be implemented within the scope of the following patent application scope. Therefore, this embodiment is to be considered as illustrative and not restrictive, and the present invention is not limited to the details provided herein, but may vary within the scope and equivalent design of the scope of patent applications below.

第39頁 200421713 圖式簡·單說明 五、【圖式簡單說明】 本發明將藉由聯合附圖之卞述詳細說明而輕易理解, 且相同的參考數字標示相同的構造元件。 圖1 A係為典型的整批基板清洗系統之圖。 圖1 B係為整批基板清洗系統之俯視圖。 圖1 C係為習知技術之提供一個或多個轉換器之RF供應 之概要圖。 圖1 D係為典型的轉換器丨8 b。 圖1 E係為橫越過轉換器之能量分佈圖。 圖2 A與2 B顯示依據本發明之一個實施例之動態的單一 基板清洗系統。 ^ 圖2 C係為依據本發明之一個實施例之使用於例如上述 圖2 A與2B所說明的百萬赫茲超音波清洗系 RF產生器系統之方法操作之流程圖。 甲之自動心 圖3係為依據本發明之一個實施例之自動 器系統之方塊圖。 調諧RF產生 圖4係為依據本發明之—他| ^ ... , ^ ^ 十奴乃心個貫施例之自動調諧RF產生 器系統在RF產生器正將π信號袒 之流程圖。 ㈣“虎扶供給轉換器時之方法操作 圖5 A係為依據本發明之一個 示意圖。 實施例之峰值Vds偵測器 之 圖5 B係為依據本發明之一 ym 個貫施例之由峰值電壓偵測 器所偵測之峰值電壓(Vds)之波形圖。 m貝! 圖6係為依據本發明之一他 x ^ ^ 個貫施例之自動調諳RF產生Page 39 200421713 Brief Description of the Drawings 5. Brief Description of the Drawings The present invention will be easily understood through the detailed description in conjunction with the accompanying drawings, and the same reference numerals indicate the same structural elements. Figure 1 A is a diagram of a typical batch substrate cleaning system. Figure 1B is a top view of the entire substrate cleaning system. Figure 1C is a schematic diagram of the RF supply of one or more converters for conventional techniques. Figure 1 is a typical converter 8b. Figure 1E is the energy distribution diagram across the converter. 2A and 2B show a dynamic single substrate cleaning system according to an embodiment of the present invention. ^ FIG. 2C is a flow chart of the method operation of a megahertz cleaning system RF generator system such as that described in FIGS. 2A and 2B according to an embodiment of the present invention. A's Automatic Heart Figure 3 is a block diagram of an automatic system according to an embodiment of the present invention. Tuning RF Generation Figure 4 is a flow chart of an auto-tuning RF generator system according to one embodiment of the present invention— ^ |, ^^^. ㈣ “Method operation when the tiger is supplied to the converter. FIG. 5A is a schematic diagram according to the present invention. FIG. 5 of the peak Vds detector of the embodiment is shown in FIG. 5B is the peak value according to one embodiment of the present invention. The waveform of the peak voltage (Vds) detected by the voltage detector. Mbe! Figure 6 is an automatic tuning RF generation according to one embodiment of the present invention.

200421713 圖式簡單說明 器系統之方塊圖。 圖7係為依據本發明之一個實施例之自動調諧rf產生 器系統之方法操作之流程圖。 圖8 A - 8 C顯示依據本發明之一個實施例之三例在相位 P1與相位P2之間的關係。 圖9係為依據本發明之一個實施例之自動調諧RF產生 器系統之方塊圖。200421713 Block diagram of simple illustration system. FIG. 7 is a flowchart of the operation of the method for automatically tuning the rf generator system according to an embodiment of the present invention. 8A to 8C show the relationship between the phase P1 and the phase P2 according to three examples of an embodiment of the present invention. FIG. 9 is a block diagram of an auto-tuning RF generator system according to an embodiment of the present invention.

圖1 0係為依據本發明之一個實施例之自動調諧RF產生 器系統之方法操作之流程圖。 圖11係為依據本發明之一個實施例之百萬赫茲超音波 模組之圖。 圖1 2係為依據本發明之一個實施例之橫越過轉換器之 能量分佈圖。 元件符號說明: 1 0〜基板清洗糸統 U〜槽 12〜基板載體FIG. 10 is a flowchart of the operation of a method for automatically tuning an RF generator system according to an embodiment of the present invention. FIG. 11 is a diagram of a megahertz ultrasonic module according to an embodiment of the present invention. Figure 12 is an energy distribution diagram across a converter according to an embodiment of the present invention. Component symbol description: 1 0 ~ substrate cleaning system U ~ tank 12 ~ substrate carrier

14〜基板 1 5〜發射能量 1 6〜洗滌液 1 7〜反射能量 18A、18B、18C〜轉換器 19A、19B〜定位夾具14 ~ substrate 1 5 ~ emitted energy 1 6 ~ washing liquid 1 7 ~ reflected energy 18A, 18B, 18C ~ converter 19A, 19B ~ positioning fixture

第41頁 200421713 圖·式簡單說明 24、24A〜基板 3 0〜概要圖 32〜電壓控制振盪器(VC0) 3 3、3 5〜信號 34〜RF產生器 3 6〜功率感測器 38〜反射信號 100〜能量分佈圖 1 0 2、1 0 4、1 2 0、1 2 2 〜曲線 2 0 0〜百萬赫茲超音波清洗系統 20 2〜基板 2 0 4〜洗務液 2 0 6〜清洗容室 208A、2 0 8B、208C〜邊緣滾輪 209A 、 209B〜方向 21 0〜轉換器 212〜RF產生器 214〜發射能量 21 6〜反射能量 2 1 8〜活化表面 220〜RF信號 222〜反射信號 2 5 0〜方法操作 25 5、260、270 〜操作P.41 200421713 Diagrams and brief descriptions 24, 24A ~ Substrate 3 0 ~ Outline Figure 32 ~ Voltage controlled oscillator (VC0) 3 3, 3 5 ~ Signal 34 ~ RF generator 3 6 ~ Power sensor 38 ~ Reflection Signal 100 ~ Energy distribution chart 1 0 2, 1 0 4, 1 2 0, 1 2 2 ~ Curve 2 0 0 ~ Megahertz ultrasonic cleaning system 20 2 ~ Substrate 2 0 4 ~ Cleaning solution 2 0 6 ~ Cleaning Capacitors 208A, 2 0 8B, 208C ~ edge rollers 209A, 209B ~ direction 21 0 ~ converter 212 ~ RF generator 214 ~ emitted energy 21 6 ~ reflected energy 2 1 8 ~ activated surface 220 ~ RF signal 222 ~ reflected signal 2 5 0 ~ method operation 25 5, 260, 270 ~ operation

第42頁 200421713 圖式簡單說明 30 0〜自動調諧RF產生器系統 30 2〜RF產生器 30 6〜電壓控制振盪器(VCO) 310〜RF信號 31 2〜DC電源供應部 314〜電感器 3 2 0〜放大器 322〜DC偏壓導軌 324〜接地電位導軌 3 2 6〜谓測器 3 3 0〜E類負載網路 332〜轉換器 340〜比較器裝置 342〜分壓器網路 4 0 0〜方法操作 405、410、415、42 0 〜操作 502、504〜電容器 5 0 6〜二極體 5 5 0〜波形圖 552、554、556〜電壓波形 600〜RF產生器系統 602〜RF產生器 6 0 4〜相位偵測器 6 0 6〜第一輸入Page 42 200421713 Simple illustration 30 0 ~ Automatic tuning RF generator system 30 2 ~ RF generator 30 6 ~ Voltage controlled oscillator (VCO) 310 ~ RF signal 31 2 ~ DC power supply unit 314 ~ Inductor 3 2 0 ~ amplifier 322 ~ DC bias rail 324 ~ ground potential rail 3 2 6 ~ predictor 3 3 0 ~ type E load network 332 ~ converter 340 ~ comparator device 342 ~ voltage divider network 4 0 0 ~ Method operation 405, 410, 415, 42 0 ~ operation 502, 504 ~ capacitor 5 0 6 ~ diode 5 5 0 ~ waveform diagram 552, 554, 556 ~ voltage waveform 600 ~ RF generator system 602 ~ RF generator 6 0 4 ~ phase detector 6 0 6 ~ first input

第43頁 200421713 圖-式簡單說明 608〜第二輸入 610、612〜計量電路 6 2 0〜控制放大器 70 5、710、715、720、73 0 〜操作 9 0 0〜自動調諧RF產生器系統 90 2〜可變DC電源供應部 9 0 4〜比較器 906〜計量電路Page 43 200421713 Figure-style brief description 608 ~ second input 610, 612 ~ metering circuit 6 2 0 ~ control amplifier 70 5, 710, 715, 720, 73 0 ~ operation 9 0 0 ~ auto-tuning RF generator system 90 2 ~ Variable DC power supply unit 9 0 4 ~ Comparator 906 ~ Metering circuit

I 0 0 5、1 0 1 0、1 0 1 5、1 0 3 0 〜操作 II 0 0〜百萬赫茲超音波模組 1102〜基板處理槽 11 0 4〜密封蓋 11 0 6〜槽百萬赫茲超音波轉換器 II 0 8〜密封蓋百萬赫茲超音波轉換器 III 0〜基板I 0 0 5, 1 0 1 0, 1 0 1 5, 1 0 3 0 to operation II 0 0 to 1 million Hz ultrasonic module 1102 to substrate processing tank 11 0 4 to seal cover 11 0 6 to 1 million Hertz Ultrasonic Converter II 0 8 ~ Sealed Cover Mega Hertz Ultrasonic Converter III 0 ~ Substrate

111 2〜驅動輪 111 4〜穩定臂/輪 111 6〜驅動馬達 111 8〜機械連接器 11 2 0〜驅動裝置 1122〜定位桿 1 2 0 0〜能量分佈圖 1 2 0 2〜能窗 1 2 1 0、1 2 1 2〜曲線111 2 ~ Drive wheel 111 4 ~ Stabilizer arm / wheel 111 6 ~ Drive motor 111 8 ~ Mechanical connector 11 2 0 ~ Drive 1122 ~ Positioning rod 1 2 0 0 ~ Energy distribution map 1 2 0 2 ~ Energy window 1 2 1 0, 1 2 1 2 ~ curve

第44頁Page 44

Claims (1)

200421713 六-、申請專利範圍 1 · 一種動態調整RF產生器至轉換器之瞬間共振頻率 之方法,包含以下步驟: 從一振盪器將一RF輸入信號輸入至該RF產生器; 測量該RF輸入信號之一輸入電壓之一第一相位; 測量自該RF產生器輸出並連接至一轉換器輸入之該RF 信號之一電壓之一第二相位; 當該第一相位不等於該第二相位時,產生一頻率控制 信號;以及200421713 VI. Application Patent Scope 1 · A method for dynamically adjusting the instantaneous resonance frequency of an RF generator to a converter, including the following steps: Inputting an RF input signal to the RF generator from an oscillator; Measuring the RF input signal An input voltage and a first phase; a second phase of a voltage of the RF signal output from the RF generator and connected to a converter input is measured; when the first phase is not equal to the second phase, Generating a frequency control signal; and 將該頻率控制信號施加至該振盪器之一頻率控制輸 入° 2. 如申請專利範圍第1項所述之動態調整RF產生器至 轉換器之瞬間共振頻率之方法,其中將該頻率控制信號施 加至該振盪器之該頻率控制輸入之步驟包括結合該頻率控 制信號與一設定點控制信號。 3. 如申請專利範圍第1項所述之動態調整RF產生器至 轉換器之瞬間共振頻率之方法,其中當該第一相位不等於 該第二相位時,產生該頻率控制信號之步驟包括:Apply the frequency control signal to one of the frequency control inputs of the oscillator ° 2. The method for dynamically adjusting the instantaneous resonance frequency of the RF generator to the converter as described in the first item of the patent application scope, wherein the frequency control signal is applied The step of the frequency control input to the oscillator includes combining the frequency control signal with a setpoint control signal. 3. The method for dynamically adjusting the instantaneous resonance frequency of an RF generator to a converter as described in item 1 of the scope of patent application, wherein when the first phase is not equal to the second phase, the step of generating the frequency control signal includes: 如果該第一相位落後該第二相位,則該頻率控制信號 降低該振蘯器之頻率; 如果該第一相位領先該第二相位,則該頻率控制信號 增加該振盪器之頻率;以及 如果該第一相位係等於該第二相位,則該頻率控制信 號不改變該振盪器之頻率。 .4.如申請專利範圍第1項所述之動態調整RF產生器至If the first phase is behind the second phase, the frequency control signal decreases the frequency of the oscillator; if the first phase leads the second phase, the frequency control signal increases the frequency of the oscillator; and if the The first phase is equal to the second phase, so the frequency control signal does not change the frequency of the oscillator. .4. Dynamically adjust the RF generator as described in item 1 of the patent application scope to 第45頁 200421713Page 45 200421713 ,其中測量該第一相位與 之每個·周期產生該頻率控 該 制 轉換斋之瞬間共振頻率之方法 第二相位,且在該訐輸入信 信號。 一種轉換器RF源,包含: 一振盪器,具有一頻率控制輸入與一 信號輸出; 一 ^ RF產生器,具有連接至該振盪器之該RF信號輸出之 雨入以及連接至該轉換器之一RF產生器輸出·,與 如/二電壓相位偵測器,該電壓相位偵測器包含·· 一第一 =位輪入,連接至該振盪器之該評信號輸出;一第二相位 =入^接至該RF產生器輪出;以及-頻率控制信號輸 ,連接至該振盪器頻率控制輸入。 艇如申請專利範圍第5項所述之轉換器RF源,其中該 Μ控制信號輸出係經由一控制放大器而連該振 頸率控制輸入。 7丄^申请專利範圍第6項所述之轉換器RF源,其中該 控制放大器包含: 第一輸入,連接至該頻率控制信號輸出; 二第二輸入,連接至一設定點控制信號;以及 一輸出’連接至該振盪器頻率控制輸入。 Μ 4 ^ ^如申凊專利範圍第5項所述之轉換器RF源,其中該 轉換器係被包含在-百萬赫兹超音波清洗容室中。 9· 一種轉換器RF源,包含·· 電£控制振盪器(VCQ ),具有一頻率控制電壓輸入In which, measuring the first phase and each cycle of the frequency to generate the frequency control method to convert the instantaneous resonance frequency of the second phase, and input a signal signal in the frame. A converter RF source includes: an oscillator having a frequency control input and a signal output; an RF generator having a rain input of the RF signal output connected to the oscillator and one of the converters The output of the RF generator is the same as the voltage phase detector. The voltage phase detector includes: a first = bit turn-in, which is connected to the output of the evaluation signal of the oscillator; a second phase = in ^ Connected to the RF generator output; and-a frequency control signal input, connected to the oscillator frequency control input. The converter RF source according to item 5 of the patent application scope, wherein the M control signal output is connected to the neck rate control input via a control amplifier. 7 丄 ^ The converter RF source according to item 6 of the patent application scope, wherein the control amplifier includes: a first input connected to the frequency control signal output; two second inputs connected to a setpoint control signal; and Output 'is connected to this oscillator frequency control input. M 4 ^ The RF source of the converter as described in claim 5 of the patent scope, wherein the converter is contained in a -megahertz ultrasonic cleaning chamber. 9. A converter RF source containing an electric controlled oscillator (VCQ) with a frequency controlled voltage input 第46頁 200421713Page 46 200421713 一 E類RF產生器,具有連接至該咖 連接至具有-變化阻抗之該轉換器之一 = =以及 -電壓相位偵測器,該電壓相位:輪出二及 相位輸入,連接至該VC()之該 一、’、一ws •一第一 接至該RF產生器輪出;以及一 ’,第:相位輸入,連 抻制淤士哭、*拉 ’ 電壓控制信號輸出,經由一 二 大為連接至該VC0頻率控制電壓輸入; 該控制放大器包含: 一,一輸入,連接至該電壓控制信號輸出;An E-type RF generator having one connected to the converter and one of the converters with -variable impedance == and-a voltage phase detector, the voltage phase: wheel out two and phase input, connected to the VC ( ) Of the one, ', and one ws • one is first connected to the RF generator for rotation; and one, the first: the phase input, the flail system cries, and the * pull' voltage control signal is output through one or two To connect to the VC0 frequency control voltage input; the control amplifier includes: one, one input, connected to the voltage control signal output; 一第二輸入’連接至一設定點控制信號;以及 一輸出’連接至該vc〇頻率控制電壓輸入。 10· 一種基板之清洗方法,包含以下步驟: , 以一頻率f將一 RF信號施加至一轉換器,該轉換器係 被配向至該基板’以使該轉換器以該頻率f向該基板放射 一聲能; 相對於邊轉換器移動該基板·,及 動態調整該RF信號以維持該聲能之一共振。A second input 'is connected to a setpoint control signal; and an output' is connected to the vc0 frequency control voltage input. 10. A method for cleaning a substrate, comprising the following steps: applying an RF signal to a converter at a frequency f, the converter being aligned to the substrate 'so that the converter radiates to the substrate at the frequency f An acoustic energy; moving the substrate relative to the edge converter, and dynamically adjusting the RF signal to maintain a resonance of the acoustic energy. 11·如申請專利範圍第丨〇項所述之基板之清洗方法, 其中動態调整該R F信號以維持該聲能之該共振之該步驟包 括維持施加至該轉換器之該RF信號之一固定電壓。 12·如申請專利範圍第1 〇項所述之基板之清洗方法’ 其中一RF產生器將該RF信號施加裘該轉換器,而維持施加 至該轉換器之該RF信號之一固定電壓之該步驟包含以下步 驟: 測量該RF信號之一第一電壓;11. The method for cleaning a substrate as described in the scope of the patent application, wherein the step of dynamically adjusting the RF signal to maintain the resonance of the acoustic energy includes maintaining a fixed voltage of the RF signal applied to the converter . 12. The method for cleaning a substrate as described in Item 10 of the scope of patent application ', wherein an RF generator applies the RF signal to the converter and maintains a fixed voltage of the RF signal applied to the converter. The steps include the following steps: measuring a first voltage of the RF signal; 第47頁 200421713 六、·申請專利範圍 比較該第一電壓與一期望設定點電壓;以及 將一控制信號輸入至一可變DC電源供應部,俾能調整 該可變DC電源供應部之一輸出電壓,該可變DC電源供應部 提供DC功率給該rf產生器。 13·如申請專利範圍第1 〇項所述之基板之清洗方法, 其中動態調整該RF信號以維持該聲能之該共振之該步驟包 括動態調整施加至該轉換器之該RF信號之一頻率f。 14·如申請專利範圍第1 3項所述之基板之清洗方法, 其中該RF信號係由一RF產生器所施加,且動態調整施加至 該轉換器之該RF信號之該頻率f之該步驟包含: 測量施加至該RF產生器之一電源電壓; 測量橫越過包含在該RF產生器中之一输出放大器之一 峰值電壓; 當該峰值電壓不等於該電源電壓之一選擇比率時,產 生一頻率控制信號;以及 將該頻率控制信號施加至產生該RF信號之一振盪器之 —頻率控制輸入。 15·如申請專利範圍第1 3項所述之基板之清洗方法, 其中該RF信號係由一rf產生器所施加,且動態調整施加至 該轉換器之該RF信號之該頻率f之該步驟包含以下步驟: 從一振盪器將一RF輸入信號輸入至該RF產生器,並放 大該RF產生器中之該RF信號; 測量該RF輸入信號之一輸入電歷之一第一相位; 測量來自該RF產生器之該RF信號輸出之一電壓之一第Page 47 200421713 VI. The scope of the patent application compares the first voltage with a desired setpoint voltage; and a control signal is input to a variable DC power supply unit, which can adjust an output of the variable DC power supply unit Voltage, the variable DC power supply unit provides DC power to the rf generator. 13. The method for cleaning a substrate as described in item 10 of the scope of patent application, wherein the step of dynamically adjusting the RF signal to maintain the resonance of the acoustic energy includes dynamically adjusting a frequency of the RF signal applied to the converter f. 14. The method for cleaning a substrate as described in item 13 of the scope of the patent application, wherein the RF signal is applied by an RF generator and the step of dynamically adjusting the frequency f of the RF signal applied to the converter Including: measuring a power voltage applied to the RF generator; measuring a peak voltage across an output amplifier included in the RF generator; generating a voltage when the peak voltage is not equal to a selection ratio of the power voltage A frequency control signal; and applying the frequency control signal to a frequency control input of an oscillator that generates the RF signal. 15. The method for cleaning a substrate according to item 13 of the scope of the patent application, wherein the RF signal is applied by an rf generator and the step of dynamically adjusting the frequency f of the RF signal applied to the converter The method includes the following steps: inputting an RF input signal to the RF generator from an oscillator, and amplifying the RF signal in the RF generator; measuring a first phase of an input calendar of the RF input signal; measuring from One of the voltages of the RF signal output of the RF generator 200421713 六、申請專利範圍 二相位; 當該第一相位不等於該第二相位時,產生一頻率控制 信號;以及 將該頻率控制信號施加至該振盪器之一頻率控制輸 入° 1 6. 一種清洗系統,包含: 一清洗容室’包含一轉換器與一基板,該轉換器係被200421713 6. Two phases of patent application scope; when the first phase is not equal to the second phase, a frequency control signal is generated; and the frequency control signal is applied to one of the frequency control inputs of the oscillator ° 1 6. A cleaning The system includes: a cleaning chamber 'comprising a converter and a substrate, the converter being 配向至該基板,一可變距離d使該轉換器與該基板分離; 一動態可調整RF產生器,具有連接至該轉換器之一輸 出;以及 一反饋電路,連接至該可調整RF產生器之一控制輸 入° Y·、^申請專利範圍第1 6項所述之清洗系統,其中該 土,可被旋轉’且其中當該基板被旋轉時,該距離d改變 了 '自4RF產生器之一RF信號輸出之大約1/2波長。 1 8 ·如申凊專利範圍第1 6項所述之清洗系統,其中: f動態可調整RF產生器包含: 可4 D C電源供應部,具有一控制輸入以及連接至該 RF產生器之一Dc輸出;而 该反饋電路包含: 一第一比較器,包含: 一第一輸入,連接至一設定點控制信號; 一第二輸入,連接至該RF產生器之RF輸出;以及Aligned to the substrate, a variable distance d separates the converter from the substrate; a dynamically adjustable RF generator with an output connected to the converter; and a feedback circuit connected to the adjustable RF generator One of the control inputs ° Y ·, ^ The cleaning system described in item 16 of the scope of patent application, wherein the soil can be rotated 'and wherein when the substrate is rotated, the distance d has changed' since the 4RF generator. An RF signal is output at about 1/2 wavelength. 1 8 · The cleaning system as described in item 16 of the patent application, wherein: f The dynamically adjustable RF generator includes: a 4 DC power supply unit with a control input and a DC connected to one of the RF generators. And the feedback circuit includes: a first comparator including: a first input connected to a set-point control signal; a second input connected to the RF output of the RF generator; and 200421713200421713 六、申請專利範圍 一控制信號輪出,連接至該可調整Rf產 。 輸入,該控制輸入包含在該可變])C電源供庵器之戒控制 控制輸入。 i 电β 19.如申請專利範圍第1 8項所述之清洗 該動態可調整RF產生器包含: '糸統’其中: 一振盪器,具有一控制信號輸入與一R 一輸出放大器,連接至該振盪器輪出·,二^輸出; 一負載網路,連接在該輸出放大器之一 ^ 生器之該輸出之間;而 輸出與該RF產Sixth, the scope of patent application A control signal is turned out and connected to the adjustable Rf product. Input, the control input is included in the variable]) C power supply or control control input. i 电 β 19. The dynamic adjustable RF generator described in item 18 of the scope of the patent application includes: 'system' where: an oscillator having a control signal input and an R-output amplifier connected to The oscillator turns out, two outputs; a load network connected between the outputs of one of the output amplifiers; and the output and the RF output 該反饋電路,包含·· -峰值電壓偵測器’其連接橫越過該輸出放大器;以 及 一第二比較器,包含: :第三輸入,連接至該可變DC電源供應部之一輸出; 一第四輸入,連接至該峰值電壓偵測器之一輸出;以 制认一第二比較器輸出,連接至該可調整RF產生器之該控 剧入,該控制輸入包含該振盪器控制信號輸入。The feedback circuit includes a peak voltage detector whose connection crosses the output amplifier; and a second comparator including: a third input connected to one of the outputs of the variable DC power supply; The fourth input is connected to an output of the peak voltage detector; the second comparator output is connected to the control input of the adjustable RF generator, and the control input includes the oscillator control signal input . °·如申請專利範圍第18項所述之清洗系統,其中: 该動態可調整RF產生器包含: 振堡器’具有一頻率控制輸入與一RF信號輸出;以 二RF產生器輸入’連接至該振盪器”信號輸出;而 該反饋電路包含:° · The cleaning system as described in item 18 of the scope of patent application, wherein: the dynamically adjustable RF generator includes: a vibrator with a frequency control input and an RF signal output; connected to two RF generator inputs to The oscillator "signal is output; and the feedback circuit includes: 第50頁 入 200421713 、申請專利範圍 一電壓相位偵測器,包含: 一,一相位輸入,連接至該振烫器之該RF信號輸出; 一第二相位輸入,連接至該RF產生器輸出;以及 一頻率控制信號輸出,連接至該可調整RF產生器之該 控制輸入,該控制輸入包含該振盪器頻率控制電壓輸入。 21·如申請專利範圍第1 6項所述之清洗系統,其中: 該動態可調整RF產生器包含: 一供應電壓源; 振盛器’具有一控制信號輸入與一RF信號輸出; 一輪出放大器,連接至該振盪器輸出; 一負載網路,連接在該輸出放大器之一輸出與該RF產 生器之該輸出之間;而 5亥反饋電路包含: 一峰值電壓摘測器,連接橫越過該輸出放大器;以及 一比較器電路,包含·· 一第一輸入,連接至該供應電壓源; 一第二輸入,連接至該峰值電壓偵測器之一輸出;以 >比車父為輸出’連接至該可調整RF產生器之該控制輸 忒控制輸入包含該振盪器控制信號輸入。 2 2·如申請專利範圍第丨6項所述之清洗系統,其中: j動態可調整RF產生器包含: 一振盈器’具有一頻率控制輸入與一RF信號輸出; RF產生器輸入’連接至該振盪器RF信號輸出;而200421713 on page 50, patent application scope a voltage phase detector, including: a phase input connected to the RF signal output of the ironer; a second phase input connected to the RF generator output; And a frequency control signal output connected to the control input of the adjustable RF generator, the control input including the oscillator frequency control voltage input. 21. The cleaning system according to item 16 of the scope of patent application, wherein: the dynamically adjustable RF generator includes: a supply voltage source; the vibrator 'has a control signal input and an RF signal output; a round-out amplifier, Connected to the oscillator output; a load network connected between an output of the output amplifier and the output of the RF generator; and the 5H feedback circuit includes: a peak voltage picker connected across the output An amplifier; and a comparator circuit, including a first input connected to the supply voltage source; a second input connected to an output of the peak voltage detector; > than the car parent's output 'connection The control input control input to the adjustable RF generator includes the oscillator control signal input. 2 2 · The cleaning system as described in item 6 of the patent application scope, wherein: j the dynamically adjustable RF generator includes: a vibrator 'with a frequency control input and an RF signal output; RF generator input' connection To this oscillator RF signal output; and 第51頁 200421713 —--- 六、申請專利範圍 該反饋電路包含: 電壓相位偵測器,包含: 一第—相位輸入,連捲 -第二相位鈐入T 之該RF信號輸出; 1率控制信號輸出,連接至續可% =:及 2, 一 &制輸入包含該振盪器頻率控制電壓輸入。 •一種動態調整RF產生器至轉換器之瞬間 之方法,包含以下步驟·· 貝千 從一振盪器提供一RF輸入信號給該RF產生器; 測量施加至該rF產生器之一電源電壓; 測量該RF產生器中之一峰值電歷; 當該峰值電壓不等於該電源電壓之一選擇比率時,產 生一頻率控制信號;以及 將該頻率控制信號施加至該振盪器之一頻率控制輸 入0 24·如申請專利範圍第23項所述之動態調整RF產生器 至轉換器之瞬間共振頻率之方法,其中測量該峰值電壓之 戎步驟包括測量橫越過包含在該r F產生器中之一輸出放大 器之該峰值電壓。 2 5 ·如申請專利範圍第2 3項所述之動態δ周整RF產生器 至轉換器之瞬間共振頻率之方法,其中該峰值電壓與該電 源電壓之該選擇比率係等於大約3比1以及大約6比1之間的 一範圍。 26· —種RF產生器,包含·· 200421713Page 51 200421713 ----- 6. Scope of patent application The feedback circuit includes: a voltage phase detector, including: a first-phase input, continuous roll-second phase input T, the RF signal output; 1 rate control Signal output, if connected to% =: and 2, a & input contains the frequency control voltage input of the oscillator. • A method for dynamically adjusting the instant of an RF generator to a converter, including the following steps: Beqian provides an RF input signal from an oscillator to the RF generator; measures a power supply voltage applied to the rF generator; A peak ephemeris in the RF generator; when the peak voltage is not equal to a selection ratio of the power supply voltage, generating a frequency control signal; and applying the frequency control signal to a frequency control input of the oscillator 0 24 The method for dynamically adjusting the instantaneous resonance frequency of an RF generator to a converter as described in item 23 of the scope of patent application, wherein the step of measuring the peak voltage includes measuring across an output amplifier included in the r F generator The peak voltage. 2 5 The method of the instantaneous resonance frequency of the dynamic delta-rounding RF generator to the converter as described in item 23 of the scope of the patent application, wherein the selection ratio of the peak voltage to the power supply voltage is equal to about 3 to 1 and A range between about 6 to 1. 26 · —A kind of RF generator, including 200421713 一供應電壓源 一振盪器,具 一輸出放大器 一負载網路, 生器之一輸出之間 有一控制信號輸入與一評信號輸出; ’連接至該振盪器輸出; 連接在该輸出放大器之一輸出與該Rp產 一峰值電壓偵測器,連接橫越過該輸出放大器;以及 :比較器電路’該包含:一第一輸入,連接至該 二堊一第二輪入,連接至該峰值電壓偵測器之一輸… ’ ^ 一比較n輸出,連接至該振M器控制信號輸入。 •如申請專利範圍第26項所述之RF產生器,直中A 等於由該峰值電壓偵測器輸出之一峰值電】 率時,一控制信號係從該比較器輸出被輸出。 28· 一種RF產生器,包含: 山 一供應電壓源; 一電壓控制振盪器(VC0) 輸出; 具有一控制電壓輸入與一 一輸出放大器,連接至該VC〇輸出; RF產類/載Λ路,連接在該輸*放大11之—輸出與該 RF產生态之一輸出之間; 一峰值電壓偵測器,連接橫越過該輸出放大器;及 妓5 ::較器電路’該比較器電路包含:-第-輸入,連 ,至^供應電壓源;n人,連接至該峰值電壓^ 态之合輪出、;_比較器輪出,連接至該VC0控制電壓輸、 入田電源電壓不等於由該峰值電壓偵測器輸出之一峰 200421713 六、申請專利範圍 值電壓之大約3 . 6比1之 輸出被輸出;與一轉換 比率時,一控制電 器,連接至該RF產 29. 一種維持固定輸入電壓給轉換器 壓係從該比較器 生器輸出。 之方法,包含以 下步驟: 從一RF產生器施加一RF信 第一電 一期望 至一可 一輸出 測量該RF信號之 比較該第 將 控制信 電源供 功率給 如申請 給轉換器之方法 該可變DC 提供該DC 30. 之一函數,且其 電壓與 號輸入 應部之 該RF產 專利範 ,其中 中該轉 變化而 專利範 生器 號至該轉換器; 壓; 設定點電壓 變DC電源供 電壓,該可 ;以及 應部,俾能調整 變DC電源供應部A supply voltage source, an oscillator, an output amplifier, a load network, a control signal input and an evaluation signal output between one of the outputs of the generator; 'connected to the oscillator output; connected to one output of the output amplifier A peak voltage detector is produced with the Rp, connected across the output amplifier; and: the comparator circuit 'includes: a first input, connected to the chalk, a second round-in, and connected to the peak voltage detection One of the device's inputs ... '^ A comparison n output, connected to the control signal input of the oscillator. • According to the RF generator described in item 26 of the patent application scope, when A is equal to one of the peak power output by the peak voltage detector, a control signal is output from the comparator output. 28. An RF generator comprising: a supply voltage source; a voltage controlled oscillator (VC0) output; a control voltage input and an output amplifier connected to the VC0 output; an RF product class / load circuit , Connected between the output * amplification 11-the output and one of the RF generated states output; a peak voltage detector connected across the output amplifier; and prostitute 5 :: comparator circuit 'The comparator circuit contains : -Th-input, connect to ^ supply voltage source; n people, connect to the peak voltage ^ state of the turn-on output; _comparator turn-out, connect to the VC0 control voltage input, the input power voltage is not equal to The peak voltage detector output is one of the peaks 200421713 Six, the patent application range value of about 3.6 to 1 output is output; and a conversion ratio, a control appliance, connected to the RF output 29. A fixed input The voltage to the converter is output from the comparator. The method includes the following steps: Applying an RF signal from an RF generator to the first signal to an output to measure the RF signal and comparing the second signal to the control signal power supply. Change DC provides a function of the DC 30. And its voltage and number are input to the RF production patent range of the application, where the change is changed and the patent range generator number is changed to the converter; Voltage, which can be; and the response section, which can adjust the DC power supply section 標之間的一距離 31.如申請 給轉換器之方法,其中 壓之該步驟包括決定一 約等於該 32. 第一電 一種轉 RF產生器 壓與該 換器RF ’具有 圍第29項所述之維 該第一電壓係為該 換器之該阻抗隨著該轉換器與一目 改變。 圍第29 比較該 控制信 期望設 源,包 連接至 持固定輸入電壓 轉換器之一阻抗 項所述之維持固定輸入電壓 第一電壓與該期望設定點電 號,且其中該控制信號係大 定點電壓之間的一差異。 含: 該轉換器之 輸入之一RF輸 出; 產生器之 一比較器 可變DC電源供應部,具有一控制輸入與連接至該RF D C輸出, 該比較器包含:一第一輸入,連接至一設A distance between the targets 31. If the method is applied to the converter, the step of determining the voltage includes determining a value approximately equal to the 32. The first electric-to-RF converter voltage and the converter RF have a range of 29 It is said that the first voltage is that the impedance of the converter changes with the converter and the head. Compare the desired set source of the control signal, including the first fixed voltage and the desired set point electrical number described in the impedance item of a fixed input voltage converter, and the control signal is a large fixed point. A difference between the voltages. Including: one of the converter's RF outputs; one of the generators; a comparator variable DC power supply unit having a control input and connected to the RF DC output; the comparator includes: a first input connected to a Assume 第54頁 200421713 六、申請專利範圍 定點控制信號;一第二輸入,連接至該RF產生器RF輸出; 以及一控制信號輸出,連接至該可變%電源供應部上之一 電壓控制輸入。 33· —種轉換器RF源,包含·· ——E類評產生器,具有連接至一百萬赫茲超音波清洗 谷至中之該百萬赫茲超音波轉換器之一輸入之一 RF輸出; 一可變DC電源供應部,具有一控制輸入與連接至該RF 產生器之一DC輸出;Page 54 200421713 VI. Patent application Fixed-point control signal; a second input connected to the RF generator RF output; and a control signal output connected to a voltage control input on the variable% power supply section. 33 · —A kind of converter RF source, including ... — Class E generator, with one RF output connected to one of the inputs of the one million megahertz ultrasonic transducer in the one million megahertz ultrasonic cleaning valley; A variable DC power supply unit having a control input and a DC output connected to the RF generator; L :比較器,該比較器包含··—第一輸入,連接至-設 2 L枷壓源一第二輸入,連接至該評產生器RF輸出;以 懕批二f信號輸出’連接至該可變DC電源供應部上之-電L: Comparator, the comparator includes a first input, connected to-set 2 L, a voltage source and a second input, connected to the RF generator's RF output; connected to the second batch of f signal output ' -Electricity on the variable DC power supply 第55頁Page 55
TW092137672A 2003-02-06 2003-12-31 System and method of dynamically adjusting a rf generator to an instantaneous resonant frequency of a transducer,a transducer rf source and an rf generator TWI292985B (en)

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US10/360,322 US6995067B2 (en) 2003-02-06 2003-02-06 Megasonic cleaning efficiency using auto-tuning of an RF generator at constant maximum efficiency
US10/359,765 US7053000B2 (en) 2003-02-06 2003-02-06 System, method and apparatus for constant voltage control of RF generator for optimum operation
US10/360,316 US6998349B2 (en) 2003-02-06 2003-02-06 System, method and apparatus for automatic control of an RF generator for maximum efficiency
US10/360,320 US7033845B2 (en) 2003-02-06 2003-02-06 Phase control of megasonic RF generator for optimum operation

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