TWI292985B - System and method of dynamically adjusting a rf generator to an instantaneous resonant frequency of a transducer,a transducer rf source and an rf generator - Google Patents

System and method of dynamically adjusting a rf generator to an instantaneous resonant frequency of a transducer,a transducer rf source and an rf generator Download PDF

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TWI292985B
TWI292985B TW092137672A TW92137672A TWI292985B TW I292985 B TWI292985 B TW I292985B TW 092137672 A TW092137672 A TW 092137672A TW 92137672 A TW92137672 A TW 92137672A TW I292985 B TWI292985 B TW I292985B
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generator
converter
signal
output
input
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TW092137672A
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Chinese (zh)
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TW200421713A (en
Inventor
John Boyd
Andras Kuthi
Michael G R Smith
Thomas W Anderson
William Thie
Robert Knop
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Lam Res Corp
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Priority claimed from US10/360,322 external-priority patent/US6995067B2/en
Priority claimed from US10/360,316 external-priority patent/US6998349B2/en
Priority claimed from US10/360,320 external-priority patent/US7033845B2/en
Priority claimed from US10/359,765 external-priority patent/US7053000B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200421713A publication Critical patent/TW200421713A/en
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Publication of TWI292985B publication Critical patent/TWI292985B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0207Driving circuits
    • B06B1/0223Driving circuits for generating signals continuous in time
    • B06B1/0238Driving circuits for generating signals continuous in time of a single frequency, e.g. a sine-wave
    • B06B1/0246Driving circuits for generating signals continuous in time of a single frequency, e.g. a sine-wave with a feedback signal
    • B06B1/0253Driving circuits for generating signals continuous in time of a single frequency, e.g. a sine-wave with a feedback signal taken directly from the generator circuit
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B2201/00Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
    • B06B2201/70Specific application
    • B06B2201/71Cleaning in a tank

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)

Description

12929851292985

五、發明說明(1) 【發明所屬之技術領域】 法,尤ί b!田般係關於調諧一射頻(rf)產生器之系統與方 器之方法與系I自動調譜供一基板清洗系統用之—RF產生 二、【先前技術】 用以在盤1使=係為種尚度進步、非接觸的清洗技術, 系統(MOEMS)等平等面之、貝各不猶裔、微機電系統(MEMS)、微光機電 之笑杯狡队寺各種不同的狀態下從例如半導體晶圓 聲i,用:: Γ。清洗製程一般需要透過液態介質傳輸 百萬赫表面移除微粒,並清洗基板之表面。 (ΜΗζ)) 日波能量一般係在大約700 kHz(0· 7百萬赫 圍内被傳輪約包含G·7 MHZ與1·ϋ MHz)之頻率範 品及其组:之”以是去離子水或數個基板洗滌藥 由來自液態介質中之溶解氣體之氣泡 :=二為孔蚀流、以及在經由改善質量傳i將 ?如使用作為液態介質時之化學反應增強,或 以足進化學反應,來達成非接觸基板之清洗:月匕 圖1A係為典型整批基板清洗系統1〇之 :基板清洗系統!。之俯視圖。槽μ 為二 2之晶舟幻支撑一批待被清洗之基板14。: 轉換器m8C產生經由洗細傳輪之V. INSTRUCTIONS OF THE INVENTION (1) [Technical Fields of the Invention] The method, the system and the system for tuning a radio frequency (RF) generator, and the automatic tuning of a substrate for a substrate cleaning system Use it - RF generation 2, [Prior Art] Used to make = in the disc 1 as a kind of advanced, non-contact cleaning technology, system (MOEMS) and other equal faces, shells, non-jux, MEMS ( MEMS), Weiguang Electromechanical Smile Cup Team Temple in various states from, for example, semiconductor wafer sound i, with :: Γ. The cleaning process typically involves transporting the megahertz surface through a liquid medium to remove particles and cleaning the surface of the substrate. (ΜΗζ)) The daily wave energy is generally in the frequency range of about 700 kHz (with a transmission of about 7.6 MHz and containing G·7 MHZ and 1·ϋ MHz) and its group: Ionic water or several substrate detergents are made up of bubbles from dissolved gases in a liquid medium: = two are pore erosive flows, and enhanced by chemical reactions such as when used as a liquid medium, or by foot evolution Learn the reaction to achieve the cleaning of the non-contact substrate: Figure 1A is a typical batch of substrate cleaning system: the substrate cleaning system!. The top view. The groove μ is a 2 2 crystal boat phantom support to be cleaned Substrate 14: Converter m8C is generated via the wash roller

第9頁 1292985 五、發明說明(2) "~~' - 15。經由接觸並定位載體12之定位夾具19A、ι9Β之使用, 基板14與轉換器18A、18B和18C之間的相對位置盥距離從 一批基板丨4到另一批基板一般大概是固定的置”距離從 具有或不具有適當化學以控制微粒再黏著之發射能量 1 5,係經由孔蝕、聲流、以及提高質量傳送(如果使用洗 滌藥品的話)來達成基板清洗。整批基板清洗製程一般需 要漫長的處理時間,且亦會消耗過多的洗滌藥品丨6。此 外,難以達成一貫性以及基板對基板之控制。在整批以及 其他基板百萬赫茲超音波製程中,普通都有像「遮蔽 (shadowing)與「熱點(hot spots)」這樣的情況。遮蔽係 由於發射能量1 5之反射及/或相長與相消干涉而產生,且 與多數基板14之附加基板表面區域、處理槽之壁面等化 合。熱點之發生(主要疋由於多數轉換器之使用與反射而 導致相長干涉之結果)亦會隨著額外多重基板表面區域而 增加。這些關鍵問題一般藉依賴基板上之聲能之多重反射 之平均效應而獲得處理,其會導致給基板表面較低的平均 功率。為了補償較低的平均功率並提供有效清洗與微粒移 除,係增加給轉換器之功率,藉以增加發射能量丨5並增加 孔餘與聲流,其藉以增加清洗效率。此外,係使用脈動多 數轉換器陣列18A、18B與18C(亦即,提供例如打開轉換器 持續20 ms,然後關閉持續1〇 ms之作用周期)。轉換器。 18A、18B與18C亦可不一致地被操作(例如,相繼被啟°動) 以降低化合反射與干擾。 圖1C係為習知技術之RF供應以提供一個或多個轉換器Page 9 1292985 V. Invention Description (2) "~~' - 15. The relative positional distance between the substrate 14 and the transducers 18A, 18B, and 18C is generally approximately fixed from one batch of substrates 丨4 to another batch of substrates via the use of the positioning fixtures 19A, 199 that contact and position the carrier 12. The distance from the emission energy with or without proper chemistry to control the re-adhesion of the particles is achieved by pitting, sound flow, and improved mass transfer (if detergents are used) to achieve substrate cleaning. The entire batch cleaning process is generally required. Long processing time and excessive consumption of detergents 丨6. In addition, it is difficult to achieve consistency and substrate-to-substrate control. In the whole batch and other substrate megahertz ultrasonic processes, it is generally like "shadowing" Shadowing) and "hot spots". The masking system is generated by the reflection of the emission energy of 15 and/or the phase length and the destructive interference, and is combined with the additional substrate surface area of the plurality of substrates 14, the wall surface of the processing tank, and the like. The occurrence of hot spots (mainly due to the effects of constructive interference due to the use and reflection of most converters) also increases with additional multiple substrate surface areas. These critical issues are generally addressed by relying on the average effect of multiple reflections of acoustic energy on the substrate, which results in a lower average power to the substrate surface. In order to compensate for the lower average power and provide effective cleaning and particle removal, the power to the converter is increased, thereby increasing the emission energy 丨5 and increasing the hole and sound flow, thereby increasing the cleaning efficiency. In addition, the pulsating multi-converter arrays 18A, 18B, and 18C are used (i.e., provide, for example, to turn the converter on for 20 ms, then turn off the active period of 1 〇 ms). converter. 18A, 18B, and 18C may also be operated inconsistently (e.g., sequentially activated) to reduce combined reflections and interference. Figure 1C is an RF supply of the prior art to provide one or more converters

第10頁 1292985 五、發明說明(3) -- 18A、18B、18C之概要圖30。可調整電壓控制振盪器(vc〇) 32於選擇頻率將信號33輸出至RF產生器34。RF產生器34將 信號33予以放大,以產生具有增加功率之信號35。信號託 係輸出至轉換器18B。功率感測器36監視信號35。轉換器 18B輸出發射能量Η。 轉換器1 8B之正確阻抗會隨著例如載體丨2中的基板14 之數目]尺寸和間距以及基板丨4與轉換器丨8β之間的距離 =眾多變數而改變。轉換器18B之正確阻抗亦會隨著轉換 器1 8B因為重複使用老化而改變。舉例而言,如果信號 33、35具有大約! MHz之頻率,則在例如洗滌液16之去離 子水介質中波長大約為15 mm (0.060吋)。因此,再參見 圖1A ’如果基板丨4與載體丨2之位置係分離了和大約〇. 5 mm( 0.020吋)一樣小或甚至更小,則轉換器18β之阻抗實質 上曰改隻。又,如果基板24、24A被旋轉,則阻抗會周期 性改變。 調整vco之頻率可藉由改變頻率,從而改變信號33、 3^之波長與發射能量15來調整轉換器18B之阻抗。一般而 言’將裝滿基板14之載體12設置於槽u中,並調整%〇 32 以改,信號33、35之頻率與發射能量15,直到轉換器18β 之^抗被匹配為止,如以由功率計36所偵測之反射信號38 ί 值表示。一旦已將VC。32調整以達成最小反射信號 批KO 32—般就不會再被調整,除非在基板清洗系統1〇 上執行顯著的修理或維修。 田轉換器1 8B之阻抗並未被匹配時,從轉換器丨8β發射Page 10 1292985 V. Description of Invention (3) -- Summary of Figure 18A, 18B, and 18C. An adjustable voltage controlled oscillator (vc〇) 32 outputs the signal 33 to the RF generator 34 at a selected frequency. The RF generator 34 amplifies the signal 33 to produce a signal 35 with increased power. The signal is output to the converter 18B. Power sensor 36 monitors signal 35. The converter 18B outputs the emission energy Η. The correct impedance of converter 18B will vary with, for example, the number and spacing of substrates 14 in carrier 丨2 and the distance between substrate 丨4 and converter 丨8β = numerous variables. The correct impedance of converter 18B will also change as converter 18B ages due to repeated use. For example, if the signals 33, 35 have about! The frequency of MHz is, for example, about 15 mm (0.060 Å) in the deionized aqueous medium of the wash solution 16. Therefore, referring again to Fig. 1A', if the position of the substrate 丨4 and the carrier 丨2 is separated and is as small as or less than about 0.5 mm (0.020 Å), the impedance of the converter 18β is substantially falsified only. Further, if the substrates 24, 24A are rotated, the impedance changes periodically. Adjusting the frequency of the vco can adjust the impedance of the converter 18B by changing the frequency to change the wavelength of the signals 33, 3^ and the transmitted energy 15. Generally, the carrier 12 filled with the substrate 14 is placed in the slot u, and the %〇32 is adjusted to change the frequency of the signals 33, 35 with the emission energy 15 until the resistance of the converter 18β is matched, for example, It is represented by the value of the reflected signal 38 ί detected by the power meter 36. Once the VC has been taken. 32 Adjustments to achieve the minimum reflected signal Batch KO 32 will generally not be adjusted unless significant repair or repair is performed on the substrate cleaning system. When the impedance of the field converter 1 8B is not matched, it is transmitted from the converter 丨8β

12929851292985

之部分發射能量1 7(亦即,波)係被反射回至轉換器丨8B。 ,轉換器1 8B之表面上,反射能量丨7會阻礙導致相長與相 消干涉之發射能量1 5。相消干涉降低了發射能量丨5之有效 清洗功率,其乃因為部分發射能量丨5係因反射能量丨7而有 效被抵銷。因此,降低了 RF產生器34之效率。A portion of the transmitted energy 17 (i.e., wave) is reflected back to the converter 丨 8B. On the surface of the converter 1 8B, the reflected energy 丨7 hinders the emission energy 15 which causes constructive and destructive interference. Destructive interference reduces the effective cleaning power of the emission energy 丨5 because the partial emission energy 丨5 is effectively offset by the reflected energy 丨7. Therefore, the efficiency of the RF generator 34 is reduced.

相長干涉會導致過多能量,其會在被清洗基板14之表 面上造成熱點。這些熱點會超過基板14之能量閾值並損壞 基板14。圖1D係為典型的轉換器18B。圖1E係為橫越過轉 換器18B之能量分佈圖100。曲線1〇2係為朝心線發射橫越 過轉換器18B之能量曲線。曲線1〇4係為朝y軸線發射橫越 過轉換器18B之能量曲、線。曲線12〇係為朝χ軸線與y軸線兩 者發射橫越過轉換器18B之複合能量之曲線。朝χ軸線與y 軸線兩者發射橫越過轉換器丨8β之複合能量一般可在曲線 120與曲線122之間改變,如已知的變化(例如,基板之位 ,,轉換器之老化,以及旋轉基板相對於轉換器之搖擺 等)而使轉換器1 8B之阻抗改變。臨限能量位準τ係為對基 板14之損壞閾值。一般而言,RF信號託以及藉由轉換器 1 8 B輸出之所產生之發射能量丨5之最大功率係被減少至使 最大的相長干涉導致小於基板14之能量閎值τ之峰值大小 (亦即,曲線120之峰值)之位準,俾能避免損壞基板14。 然而,RF信號35與發射能量15之減少的功率增加達成期望 清洗結果所需要的清洗製程時間,在某些實例巾,信號^ 與發射能量15之減少的功率不足以從基板14移除某些目標 锨粒如所不,有效的發射能量可改變至更加低的位準 臟 11 1 第12頁 1292985 五、發明說明(5) (以曲線1 2 2之谷部表示),以使清洗製程之效果因為有效 能量如此低(大約3 )而嚴格受到影響,因此,導致從大約3 延伸至大約17之能窗(energy window),如依照能量規模 所顯示的。Constructive interference can result in excessive energy that can cause hot spots on the surface of the substrate 14 being cleaned. These hot spots can exceed the energy threshold of the substrate 14 and damage the substrate 14. Figure 1D is a typical converter 18B. Figure 1E is an energy profile 100 traversing transducer #18. Curve 1 〇 2 is the energy curve that is emitted across the converter 18B toward the center line. Curve 1〇4 is the energy curve and line that traverses converter 18B toward the y-axis. Curve 12 is a plot of the combined energy of the yaw axis and the y axis across the transducer 18B. The composite energy emitted across the converter 丨8β for both the yaw axis and the y axis can generally vary between curve 120 and curve 122, as is known by variations (eg, substrate position, converter aging, and rotation). The impedance of the converter 18B is changed by the substrate relative to the swing of the converter. The threshold energy level τ is the damage threshold to the substrate 14. In general, the maximum power of the RF signal carrier and the emitted energy 丨5 generated by the output of the converter 1 8 B is reduced such that the maximum constructive interference results in a smaller peak value than the energy threshold τ of the substrate 14 ( That is, the peak of the curve 120) can avoid damage to the substrate 14. However, the reduced power of the RF signal 35 and the transmitted energy 15 increases the cleaning process time required to achieve the desired cleaning result. In some instances, the reduced power of the signal ^ and the emitted energy 15 is insufficient to remove certain portions from the substrate 14. If the target particles are not, the effective emission energy can be changed to a lower level of dirt. 11 1 Page 12 1292985 V. Inventive Note (5) (indicated by the valley of curve 1 2 2) to make the cleaning process The effect is severely affected because the effective energy is so low (about 3) that it results in an energy window extending from about 3 to about 17, as shown by energy scale.

轉換器1 8B —般係為例如晶體之壓電元件。由反射能 量1 7所導致的相長與相消干涉亦可將一力量添加至轉換器 18B之表面,其足以使轉換器18B產生對應的反射信號38。 功率感測器36可偵測從轉換器18B反射至RF產生器34之反 射信號38。反射信號38可建設性地或破壞性地阻礙從RF產 生器34輸出之信號35 ’以更進一步降低產生器34之效 率。 鑒於上述說明,吾人需要一種提供RF產生器之增加效 率與發射聲能之減少能窗,並降低基板損壞之可能性之改 善的百萬赫兹超音波清洗系統。 三、【發明内容】The converter 1 8B is generally a piezoelectric element such as a crystal. The constructive and destructive interference caused by the reflected energy 17 can also add a force to the surface of the converter 18B which is sufficient for the converter 18B to produce a corresponding reflected signal 38. Power sensor 36 can detect reflected signal 38 that is reflected from converter 18B to RF generator 34. The reflected signal 38 can constructively or destructively block the signal 35' output from the RF generator 34 to further reduce the efficiency of the generator 34. In view of the above, we need an improved megahertz ultrasonic cleaning system that provides an increased efficiency of the RF generator and a reduced energy window for the emission of acoustic energy and reduces the likelihood of substrate damage. Third, [invention content]

廣義來說,本發明藉由提供一種動態調諧RF產生器來 滿足這些需求’此動態調諧產生器係經常被調諧以維持 轉換器與來自轉換器之發射能量的共振。吾人應該明白到 本發明可以許多方式被實現,包含作為一製程、一設備、 一系統、電腦可讀取媒體、或一裝置。本發明之數個發明 實施例係說明於下。 一個實施例包含一種動態調整評產生器至轉換器之瞬 間共振頻率之方法。該方法包括從一振盪器將一評輸入信Broadly speaking, the present invention satisfies these needs by providing a dynamically tuned RF generator. This dynamic tuning generator is often tuned to maintain the converter's resonance with the emitted energy from the converter. It should be understood that the present invention can be implemented in many ways, including as a process, a device, a system, a computer readable medium, or a device. Several inventive embodiments of the invention are described below. One embodiment includes a method of dynamically adjusting the instantaneous resonance frequency of the generator to the converter. The method includes inputting an evaluation letter from an oscillator

第13頁 1292985 五、發明說明(6) 號輸入至該RF產生器。 一第一相位。測量來自 壓之一第二相位。來自 至一轉換器輸入。當該 生一頻率控制信號。該 之一頻率控制輸入。 測量該第一相位可 壓。測量該第二相位可 壓。將該頻率控制信號 可包括調整該頻率控制 將該頻率控制信號 之步驟亦可包括結合該 號。 當該第一相位不等 信號之步驟可包括:如 該頻率控制信號降低該 先該第二相位,則該頻 以及如果該第一相位係 號不改變該振盪器之頻 器與一目標之間的一距 該第一相位與該第 號係在該RF輸入信號之 將一比例控制信號與一 率控制信號 測量該RF輸入信號之一輸入電壓之 產生器之該RF信號輸出之一電 fRF產生器之該RF信號輸出係連接 ,相位不等於該第二相位時,產 頻率控制信號係被施加至該振盪器 包括調整該第一相位之該測量電 包括調整該第二相位之該測量電 施加至該振盪器之該頻率控制輸入 信號。 施加至該振盪器之該頻率控制輸入 頻率控制信號與一設定點控制信 於該第二 果該第一 振盈器之 率控制信 等於該第 率。該轉 離改變而 二相位係 每個周期 積分控制 相位時,產 相位洛後該 蹲率;如果 號增加該振 二相位,則 換器之該共 改變。 被測量,且 被產生。該 信號之至少 生該頻率控制 弟一相位,則 該第一相位領 盪器之頻率; 該頻率控制信 振隨著該轉換 該頻率控制信 方法亦可包括 一施加至該頻Page 13 1292985 V. Invention Note (6) is input to the RF generator. A first phase. The measurement comes from one of the second phases of the pressure. From the input to the converter. When a frequency control signal is generated. One of the frequency control inputs. The first phase is measured to be compressible. The second phase is measured to be compressible. The frequency control signal can include adjusting the frequency control. The step of controlling the frequency control signal can also include combining the numbers. The step of the first phase unequal signal may include: if the frequency control signal lowers the first phase, the frequency and if the first phase coefficient does not change the frequency of the oscillator and a target One of the first phase and the first phase of the RF input signal is a proportional control signal and a rate control signal is measured by one of the RF input signals. The RF signal output is connected, and when the phase is not equal to the second phase, the frequency control signal is applied to the oscillator, and the measuring the power including adjusting the first phase comprises adjusting the measured electrical application of the second phase The frequency to the oscillator controls the input signal. The frequency control input frequency control signal applied to the oscillator and a set point control signal are equal to the second rate control signal of the first oscillator. The transition changes and the two phases are integrated. When the phase is integrated, the phase is generated after the phase is integrated. If the phase is increased by the phase, the converter changes. It is measured and generated. The frequency of the first phase pilot is at least the phase of the signal, and the frequency control signal may also include a frequency applied to the frequency control signal.

第14頁 1292985 五、發明說明(7) ----------- 另一個實施例包含一種提供RF給轉換器之系 = ;=、:RF產生器、以及-電壓相位偵測器 ν 八有頻率控制輸入與一RF信號輸出。該產生 ^Ϊ連接至該振盪器之該RF信號輸出之一輸入以及連接 f 2換器之一RF產生器輸出。該電壓相位偵測器包含: 一第一相位輸入,連接至該振盪器之該評信號輸出·,一第 二相位輸入,連接至該RF產生器輸出;以及一 號輸出,連接至振盈器頻率控制輸入。 貞羊控制^ 抑該第一相位輸入可經由一比例縮放裝置而連接至該振 盪器之該RF信號輸出。言亥第二相位輸入可經由一比例縮放 裝置而連接至該RF產生器輸出。 "亥頻率控制信號輸出可經由一控制放大器而連接至該 振盪器頻率控制輸入。該控制放大器可包含:一第一輸v =丄連接至該頻率控制信號輸出;一第二輸入,連接至一 没定點控制信號;以及一輸出,連接至該振盪器頻率控制 輸入。該RF產生器可以是一種e類rf產生器。 該轉換器可被配向至一目標,其為距轉換器之一變化 距離」該轉換器可被包含在一百萬赫茲超音波清洗容室 中。该目標可以是一種半導體基板。該心產生器可在大約 40 0 kHz至大約2MHz之範圍内運作。 另一個實施例包含一種轉換器RF源,其包含一電壓控 制振盪器(VCO)、一E類RF產生器、—電壓相位偵測器。該 VCO具有一頻率控制電壓輸入與一輸出。該E類產生器具 有連接至该VCO輸出之一輸入以及連接至具有一變化阻抗Page 14 1292985 V. INSTRUCTIONS (7) ----------- Another embodiment includes a system for providing RF to a converter = ;=,:RF generator, and -voltage phase detection ν 八 has a frequency control input and an RF signal output. The generating is coupled to one of the RF signal output inputs of the oscillator and to one of the RF converter outputs of the f 2 converter. The voltage phase detector includes: a first phase input coupled to the evaluation signal output of the oscillator, a second phase input coupled to the RF generator output; and an output 1 connected to the oscillator Frequency control input. The sheep control controls the first phase input to be coupled to the RF signal output of the oscillator via a scaling device. The second phase input can be connected to the RF generator output via a scaling device. The "Hai frequency control signal output can be coupled to the oscillator frequency control input via a control amplifier. The control amplifier can include a first input v = 丄 connected to the frequency control signal output, a second input coupled to a no-point control signal, and an output coupled to the oscillator frequency control input. The RF generator can be an e-class rf generator. The converter can be aligned to a target that varies from one of the converters. The converter can be contained in a one million Hz ultrasonic cleaning chamber. The target can be a semiconductor substrate. The heart generator can operate in the range of approximately 40 0 kHz to approximately 2 MHz. Another embodiment includes a converter RF source including a voltage controlled oscillator (VCO), a class E RF generator, and a voltage phase detector. The VCO has a frequency control voltage input and an output. The class E generating appliance has an input connected to the VCO output and is connected to have a varying impedance

第15頁 1292985Page 15 1292985

Kf座生器輸出 场电縻相位偵測器 之該轉換器之 一第一相位輸入,連接至該vco之該輸出;一 入’連接至爾產生器輸出;以及一電壓控制;號4輸 大器rrvc°頻率控制電㈣該控 出^ ί入一ΐ:ί入’連接至該電麼控制信號輸 、第一輸入,連接至一設定點控制信號;以及一輸 出’連接至該V C 0頻率控制電壓輸入。The first phase input of the converter of the Kf generator output field electric phase detector is connected to the output of the vco; the input is connected to the output of the generator; and a voltage control; Rrvc ° frequency control power (four) the control output ^ 入 into one: 入 into 'the connection to the power control signal input, the first input, connected to a set point control signal; and an output 'connected to the VC 0 frequency Control voltage input.

一個實施例包含一種基板之清洗方法,其包括以一頻 率f將一RF信號施加至一轉換器。該轉換器係被配向至該 基板’以使該轉換器以該頻率f向該基板放射一聲能。該 基板係相對於該轉換器而移動。該RF信號係被動態調整以 維持該聲能之一共振。 ^ w 動態調整頻率f可包括在該RF信號之每個周期自動調 整該頻率f。相對於該轉換器移動該基板可包括旋轉該基 板。One embodiment includes a method of cleaning a substrate that includes applying an RF signal to a converter at a frequency f. The converter is aligned to the substrate ' to cause the converter to emit an acoustic energy to the substrate at the frequency f. The substrate moves relative to the converter. The RF signal is dynamically adjusted to maintain resonance of one of the acoustic energy. ^ w Dynamically adjusting the frequency f may include automatically adjusting the frequency f during each cycle of the RF signal. Moving the substrate relative to the converter can include rotating the substrate.

該基板亦可被浸入一洗滌液中。該洗滌液可以是去離 子水。該洗滌液可包含複數個洗滌藥品之一種或多種。動 態調整該RF信號以維持該聲能之該共振之該步驟包括維持 施加至該轉換器之該RF信號之一固定電壓。 一RF產生器可將該rf信號施加至該轉換器,而維持施 加至該轉換器之該RF信號之一固定電壓之該步驟包含以下 步驟··測量該RF信號之一第一電壓;比較該第一電壓與一 期望設定點電壓;以及將一控制信號輸入至一可變DC電源The substrate can also be immersed in a wash solution. The washing liquid may be deionized water. The wash liquor may comprise one or more of a plurality of wash drugs. The step of dynamically adjusting the RF signal to maintain the resonance of the acoustic energy includes maintaining a fixed voltage of the RF signal applied to the converter. An RF generator can apply the rf signal to the converter, and the step of maintaining a fixed voltage of the RF signal applied to the converter includes the following steps: measuring a first voltage of the RF signal; comparing the a first voltage and a desired set point voltage; and inputting a control signal to a variable DC power supply

第16頁 1292985 五、發明說明(9) 供應部’俾能調整該可變DC電源供應部之一輸出電壓,該 可變DC電源供應部提供!^功率給該評產生器。動態調整該 RF信號以維持該聲能之該共振之該步驟包括動態調整施加 至該轉換器之該RF信號之一頻率f。 R F產生器可將該r f信號施加至該轉換器,且動態調 整,加至該轉換器之該RF信號之該頻率f之該步驟包含' 測量施加至該RF產生器之一電源電壓;測量橫越過包含在 该RF產生器中之一輸出放大器之一峰值電壓;當該峰值電 壓不等於該電源電壓之-選擇比率時,產生_頻率控制信 號;以及將該頻率控制信號施加至產生該評信號之一振盪 器之一頻率控制輸入。 一 RF 整施加至 一振盪器 產生器中 一第一相 電壓之一 產生一頻 器之一頻 另一 洗容室, 被配向至 離。該系 至該轉換 產生器可 該轉換器 將一 RF輸 之該RF信 位,並測 第二相位 率控制信 率控制輸 個實施例 該清洗容 該基板。 將該RF 之該RF 入信號 號。測 量來自 °當該 號。該 入。 包含一 室包含 一可變 :一動 器之一輸出;以 統亦包含 “號施加至該轉換器,且動態調 信號之該頻率f之該步驟包含從 輸入至該RF產生器,並放大該RF 量該RF輸入信號之一輸入電壓之 該RF產生器之該rf信號輸出之一 第一相位不等於該第二相位時, 頻率控制信號係被施加至該振盪 種基板之清洗系統,其包含一清 一轉換器與一基板。該轉換器係 距離d使該轉換器與該基板分 態可調整RF產生器,其具有連接 及一反饋電路,連接至該可調整Page 16 1292985 V. INSTRUCTIONS (9) The supply unit can adjust the output voltage of one of the variable DC power supply units, and the variable DC power supply unit supplies power to the evaluation generator. The step of dynamically adjusting the RF signal to maintain the resonance of the acoustic energy includes dynamically adjusting a frequency f of the RF signal applied to the transducer. An RF generator can apply the rf signal to the converter and dynamically adjust, the step of adding the frequency f of the RF signal to the converter includes 'measuring a supply voltage applied to the RF generator; measuring the cross Crossing a peak voltage of one of the output amplifiers included in the RF generator; generating a frequency control signal when the peak voltage is not equal to a selection ratio of the power supply voltage; and applying the frequency control signal to generate the evaluation signal One of the oscillators is a frequency control input. An RF integer is applied to one of the first phase voltages in an oscillator generator to produce one frequency of the other frequency chamber and the other chamber is aligned. The conversion generator can convert the RF signal to an RF signal and measure the second phase rate control signal to control the substrate. The RF of the RF is entered into the signal number. The measurement comes from ° when the number. The entry. Including a chamber comprising a variable: an output of an actuator; the system also includes a "number applied to the converter, and the step of dynamically frequency-modulating the frequency f includes inputting from the input to the RF generator and amplifying the RF When one of the rf signal outputs of the RF generator is one of the RF input signals and the first phase is not equal to the second phase, the frequency control signal is applied to the cleaning system of the oscillating seed substrate, which includes a Clearing a converter and a substrate. The converter is coupled to the substrate and the substrate is conditioned by an adjustable RF generator having a connection and a feedback circuit coupled to the adjustable

1292985 五、發明說明(ίο) RF產生器之一控制輸入。該基板可被旋轉。當該基板被旋 轉時,該距離d改變了來自該RF產生器之一RF信號輸出之 大約1 / 2波長。 該動態可調整RF產生器可包含具有一控制輸入以及連 接至該RF產生器之一DC輸出之一可變DC電源供應部。該反 饋電路可包含一第一比較器,其包含連接至一設定點控制 信號之一第一輸入、連接至該RF產生器之RF輸出之一第二 輸入、以及連接至該可調整RF產生器之該控制輸入之一控 制信號輸出。該控制輸入包含在該可變DC電源供應部上之 一電壓控制輸入。 包含一 器可被 第三輸 四輸入 比較器 控制輸 態可調 與一 RF 該電壓 態可調整RF產生 之一輸出放大器 信號輸入與一RF 大器之一輸出與 號輸出之一RF產 器可包 、以及 信號輸 該RF產 偵測器 過該輸 至該可 該峰值 接至該 該振盪 器可包 生為輸 。該反 器可包 路。該振 載網路係 輸出之間 比較器。 。該第二 供應部之 器之一輪 產生器之 號輪入。 為與連接 盈器具有 包含一電 一相位輪 盪器輸出 有一控制 該輸出放 饋電路可 電壓偵測 包含:一 出;一第 及一第二 輪入。該 该動 盈Is R F信 控制輪入 偵測器。 峰值電壓 連接橫越 入,連接 ,連接至 輸出,連 入可包含 整RF產生 信號輸出 相位偵測 含一振盡 一負載網 出。該負 生器之該 與一第二 出放大器 變DC電源 電壓偵測 可調整RF 器控制信 含一振盪 入。該振 饋電路可 含:一第 至該振 盪器具 連接在 。該反 該峰值 比較器 一輸 出,以 該控制 至該振 一頻率 壓相位 入,連1292985 V. Description of the Invention (ίο) One of the RF generators controls the input. The substrate can be rotated. When the substrate is rotated, the distance d changes about 1/2 wavelength from the RF signal output of one of the RF generators. The dynamically adjustable RF generator can include a variable DC power supply having a control input and a DC output coupled to one of the RF generators. The feedback circuit can include a first comparator including a first input coupled to a set point control signal, a second input coupled to the RF output of the RF generator, and coupled to the adjustable RF generator One of the control inputs controls the signal output. The control input includes a voltage control input on the variable DC power supply. Including one device can be controlled by the third input four-input comparator. The output state can be adjusted with an RF. The voltage state can be adjusted to generate one of the output amplifier signal inputs. One of the RF output devices can output one of the output signals. The packet and the signal are transmitted to the RF detector to pass the peak to the oscillator to be input to the oscillator. This counter can be wrapped. The vibrating network is the comparator between the outputs. . One of the wheels of the second supply unit is wheeled in. For the connection and the input device, there is a power supply, a phase of the inverter output, and a control. The output feedback circuit can be used for voltage detection, including: one out; one second and one second round. The momentum Is R F letter controls the wheeled detector. The peak voltage connection is traversed, connected, connected to the output, and the connection can include the entire RF generation signal output. Phase detection includes a recovery of a load network. The comparator and the second output amplifier are converted to a DC power supply voltage detection to adjust the RF control signal to include an oscillation. The vibrating circuit can include: a first to the oscillating device connected to the . The inverse of the peak comparator is outputted, and the control is applied to the frequency of the oscillator.

1292985 五、發明說明(11) 接至該振盪器之該RF信號輸出._ 該RF產生器輸出;以及1率控;=輸 調整RF產生器之該控制輪入。 二輪出, 頻率控制電壓輸入。 4控制輪入可包 該動態可調整RF產生器可包 — 盪器,具有-控制信號輪入與一 ^應電 器,連接至該振盪器輸出;— 輸出, 大器之一輸出與該RF產生器兮j路,連接 包含連接橫越過該輸出放大兩之間。該 較器電路。該比較器電路可匕:峰:電壓摘 供應電壓源;一第二輸入了至;輸, 輸出;以及一比較器輸出’連=值電壓 控制輸入。該控制輸入可包含該 = 該動態可調整RF產生器可包含一 ς 盪器RF信號輸出之一 rf產生 、态, _ _ 王恭翰入,而該及錯 -電壓相位偵測器。該振盪器具 信號輸出。該電壓相位偵測器包含:一,, 接至該振盪器之該RF信號輪出· 目 該RF產生器輸出;以及4;控=以輸 :fF產生器之該控制輸入。該控制輸入可包 頻率控制電壓輸入。 j匕 轉換器可包含兩個以上的轉換器。該動 生益可包含兩個以上的動態可 可調產生器具有連接至兩個以上的=1292985 V. INSTRUCTIONS (11) The RF signal output to the oscillator. _ The RF generator output; and 1 rate control; = input adjusts the control wheel of the RF generator. Two rounds, frequency control voltage input. 4 control wheel input can be included in the dynamic adjustable RF generator can be packaged - with - control signal wheeled and connected to the oscillator output; - output, one of the output and the RF generated The 兮j road, the connection containing the connection traverses the output between the two. The comparator circuit. The comparator circuit can be: peak: voltage is supplied to the supply voltage source; a second input is supplied; output, output; and a comparator output is connected to the value voltage control input. The control input can include the = the dynamic adjustable RF generator can include a rf RF signal output, rf generation, state, _ _ Wang Gonghan, and the error-voltage phase detector. This oscillator has a signal output. The voltage phase detector comprises: a, the RF signal connected to the oscillator, and the RF generator output; and 4; control = to input the control input of the fF generator. This control input can include a frequency control voltage input. The j匕 converter can contain more than two converters. The dynamic benefit can include more than two dynamically adjustable generators with connections to more than two =

I麵 第19頁 入,連接至 連接至該可 含該振盪器 壓源;一振 一輸出放大 在該輸出放 反饋電路可 測裔與一比 ,連接至該 偵測器之一 產生器之該 號輸入。 連接至該振 電路可包含 輸入與一RF 位輸入,連 入’連接至 連接至該可 含該振盪器 態可調整RF ’每個動態 之其中一個 1292985 、發明說明(12) 之f各個輸出。該轉換器可包含:一第一轉換器,被配向 至該基板之一活化表面;以及一第二轉換器,被配向至該 基板之一非活性側。 一個實施例包含一種動態調整評產生器至轉換器之瞬 振頻率之方法。該方法包括從一振盪器提供一RF輸入 h號給該RF產生器以及測量施加至該RF產生器之一電源電 壓。測S該RF產生器中之一峰值電壓。當該峰值電壓不等 於該電源電壓之一選擇比率時,產生一頻率控制信號。該 頻率控制^號係被施加至該振盪器之一頻率控制輸入。 測量該峰值電壓可包括測量該評輸入信號之每個周期 之該峰值電壓。測量該峰值電壓可包括測量橫越過包含在 該RF產生器中之該輸出放大器之該峰值電壓。該輸出放大 器可以是一CMOS裝置,且該峰值電壓係等於從該輸出放大 器之一汲極至一源極之一電壓。測量施加至該RF產生器之 該電源電壓可包括調整該測量電源電壓。測量該峰值電壓 亦可包括調整該測量峰值電壓。 該峰值電壓與該電源電壓之該選擇比率可以等於大約 3比1以及大約6比1之間的一範圍。具體而言,該峰值電壓 與该電源電壓之該選擇比率可以等於大約4比丨或大約3 6 比1。該方法亦可包括將一比例控制信號與一積分控制信 號之至少一施加至該頻率控制信號。該方法亦可包括將來 自該RF產生器之一被放大RF信號輸出施加至一轉換器,該 轉換器被配向至一目標,在該轉換器與該目標之間的一距 離係為一可變距離。The 19th page of the I surface is connected to the connection to the voltage source of the oscillator; the output of the oscillator is amplified, and the feedback circuit of the output can measure the ratio of the target to the generator, and is connected to the generator of the detector. Number input. The connection to the oscillating circuit can include an input and an RF bit input, connected to each of the outputs connected to the one of the dynamics of the oscillatory state, which can be included in the oscillatory state, 1292985, invention description (12). The converter can include: a first converter sized to an activation surface of the substrate; and a second converter aligned to one of the inactive sides of the substrate. One embodiment includes a method of dynamically adjusting the instantaneous frequency of the generator to the converter. The method includes providing an RF input h from an oscillator to the RF generator and measuring a supply voltage applied to the RF generator. One of the peak voltages in the RF generator is measured. A frequency control signal is generated when the peak voltage is not equal to one of the supply voltage selection ratios. The frequency control is applied to one of the oscillator's frequency control inputs. Measuring the peak voltage can include measuring the peak voltage for each period of the evaluated input signal. Measuring the peak voltage can include measuring the peak voltage across the output amplifier included in the RF generator. The output amplifier can be a CMOS device and the peak voltage is equal to a voltage from one of the drains of the output amplifier to a source. Measuring the supply voltage applied to the RF generator can include adjusting the measured supply voltage. Measuring the peak voltage can also include adjusting the measured peak voltage. The selection ratio of the peak voltage to the supply voltage can be equal to a range between about 3 to 1 and about 6 to 1. Specifically, the selection ratio of the peak voltage to the power supply voltage may be equal to about 4 丨 or about 36 to 1. The method can also include applying at least one of a proportional control signal and an integral control signal to the frequency control signal. The method can also include applying an amplified RF signal output from one of the RF generators to a converter that is aligned to a target, a distance between the converter and the target being a variable distance.

第20頁 i 1292985Page 20 i 1292985

另一個實施例包令— 電壓源、-振盪器、—浐f^糸^其包含-供應 電壓偵測器以及一比於ΐ =放大窃、—負1網路、-峰值 . 季父态電路。该振盈器具有一控制作缺 載。該輸出放大器係連接至該振盪“ 土器連;之-輸出與-產 出放大器。該比較器電路勺,偵:1連接橫越過該輸 出;以及-比接至該峰值電㈣測器之-輸 «F產生^ ώ ίτ = ’連接至該㈣器控制信號輸入。 通Ο座玍w輸出亦可連接至一轉換哭。 值電於由該峰“壓侦測器輸出之-峰 輸出。該峰值電壓伯:哭3制信號可從該比較器輸出被 之一第一雷玄考,VW、DD可包含與一第二電容器串聯連接 搞耖。兮t及與該第二電容器並聯連接之一個二 而連接至該供應電壓^。係經由-第-比例縮放裝置 比例縮放裝置。測器可包含一第二 . ,,λλ t„ 罕又為可包含一運算放大器。該振盪器 可在☆約40"Hz至大約2MHz之一範圍内運作。 包含—獅產生器系統,其包含-供應 的一 E :腺;輸出與該R F產生器之-輸出之間 · —第一輸入,連接至該供 ^ A , 〇 - , t Λ //'Another embodiment of the package - voltage source, - oscillator, - 浐 f ^ 糸 ^ it contains - supply voltage detector and a ratio of ΐ = amplification, - negative 1 network, - peak. Quarter parent circuit . The vibrator has a control for the load. The output amplifier is coupled to the oscillating "earth unit; the output-output amplifier. The comparator circuit scoop, Detect: 1 connection across the output; and - the connection to the peak (four) detector - the input «F 产生^ ώ ίτ = 'Connect to the (four) device control signal input. The output of the 玍w 玍w can also be connected to a conversion cry. The value is output from the peak of the peak output of the voltage detector. The peak voltage is: the crying 3 signal can be output from the comparator by a first lightning test, and VW, DD can include a series connection with a second capacitor.兮t and one of the two connected in parallel with the second capacitor are connected to the supply voltage ^. The device is scaled via a -first scaling device. The detector may comprise a second . , , λλ t„ and may additionally comprise an operational amplifier. The oscillator may operate in a range of from about 40 " Hz to about 2 MHz. Contains a lion generator system, which includes - supplied one E: gland; output between the output of the RF generator - the first input, connected to the supply ^ A , 〇 - , t Λ //'

1292985 五、發明說明(14) 應電壓源; 出; 弟一輸入,連接至該峰值電壓偵剛器 比車父器輪出,連接至該VCO控制電壓輸入,v 之 、輪 器輸出之一峰值電壓之^1 大 源電壓不等於由該峰值電壓偵測 約3 · 6比1之比率時,一控制電壓係從該比較器輪^ = 出。一轉換器係連接至該RF產生器輸出。 輪1292985 V. Invention description (14) should be the voltage source; out; the younger one input, connected to the peak voltage detector is turned out than the parent device, connected to the VCO control voltage input, v, one of the wheel output When the voltage of the large source voltage is not equal to the ratio of about 3.6 to 1 detected by the peak voltage, a control voltage is output from the comparator wheel. A converter is coupled to the RF generator output. wheel

一個實施例包含一種維持固定輸入電壓給轉換器之方 法。該方法包含以下步驟:從—RF產生器施加—RF信號至 該轉換器;測量該RF信號之一第一電壓;比較該第一電壓 與一期望設定點電壓;以及將一控制信號輸入至一可變DC 電源供應部,俾能調整該可變DC電源供應部之一輸出電 壓,該可變DC電源供應部提供該dc功率給該RF產生器。測 量該第一電壓可包括調整該測量第一電壓。 該第一電壓係為該轉換器之一阻抗之一函數。該轉換 器之該阻抗可隨著該轉換器與一目標之間的一距離變化而 改變。 比較該第一電壓與該期望設定點電壓之該步驟包括決 定一控制信號。該控制信號係大約等於該第一電壓與該期 望設定點電壓之間的一差異。One embodiment includes a method of maintaining a fixed input voltage to a converter. The method includes the steps of: applying an RF signal from the RF generator to the converter; measuring a first voltage of the RF signal; comparing the first voltage to a desired set point voltage; and inputting a control signal to the The variable DC power supply unit is configured to adjust an output voltage of the variable DC power supply unit, and the variable DC power supply unit supplies the dc power to the RF generator. Measuring the first voltage can include adjusting the measured first voltage. The first voltage is a function of one of the impedances of the converter. The impedance of the converter can vary as a function of distance between the converter and a target. The step of comparing the first voltage to the desired set point voltage includes determining a control signal. The control signal is approximately equal to a difference between the first voltage and the desired set point voltage.

調整該可變DC電源供應部之該輸出電壓可包括將一比 例控制與一積分控制之至少一施加至該控制信號。該方法 亦可包括將該轉換器配向至一目標,在該轉換器與該目標 之間的一距離係為一可變距離。 另一個實施例包含一種產生RF之系統,其包含一RF產 生器、一可變DC電源供應部、以及一比較器。該RF產生器Adjusting the output voltage of the variable DC power supply may include applying at least one of a proportional control and an integral control to the control signal. The method can also include aligning the converter to a target, a distance between the converter and the target being a variable distance. Another embodiment includes a system for generating RF that includes an RF generator, a variable DC power supply, and a comparator. The RF generator

第22頁 1292985 五、發明說明(15) 具有連接至該轉換器之一輸入之一Μ輸出。該可變^電源 供應部具有一控制輸入與連接至該Μ產生器之一DC輸出。 該比較器包含:一第一輸入,連接至一設定點控制信號; 一第二輪入’連接至該RF產生器RF輸出;以及一控制信號 輸出’連接至該可變DC電源供應部上之一電壓控制輸入。 該第二輸入係藉由一電壓比例縮放裝置而連接至RF產 生器RF輸出。该比較器亦可包含一比例控制輸入與一積分 控制輸入之至少一。該RF產生器可以是一£類心產生器。 該RF信號之該電壓係為該轉換器之一阻抗之一函數。該轉 換器之該阻抗隨著該轉換器與一轉換器目標之間的一距離 變化而改變。 該轉換器可被包含在一百萬赫茲超音波清洗容室中。 讜轉換器目標可以是一半導體基板。該比較器可以是一運 算放大器。 另一個實施例包含一種轉換器心源,其包含一£類評 產生^、一可變DC電源供應部、以及一比較器。該E類評 產^裔具有連接至一百萬赫茲超音波清洗容室中之該百萬 赫茲超曰波轉換器之一輸入之一 Μ輸出。該可變電源供 應部具有一控制輸入與連接至該RF產生器之一此輸出。該 比J器包含··一第一輸A,連接至一設定點電壓源;一第 :輸入,連接至該RF產生器RF輸出;以及一控制信號輸 出,連接至該可變DC電源供應部上之一電壓控制輸入。 本發明,供大幅縮短清洗處理時間之優點,其乃因為 六的力率聲月b可在不損壞被清洗基板的情況下被使用Page 22 1292985 V. Description of the invention (15) has one of the inputs connected to one of the converters. The variable power supply has a control input and a DC output connected to the one of the turns generators. The comparator includes: a first input coupled to a set point control signal; a second turn in 'connected to the RF generator RF output; and a control signal output 'connected to the variable DC power supply A voltage control input. The second input is coupled to the RF generator RF output by a voltage scaling device. The comparator can also include at least one of a proportional control input and an integral control input. The RF generator can be a £ core generator. The voltage of the RF signal is a function of one of the impedances of the converter. The impedance of the converter changes as a distance between the converter and a converter target changes. The converter can be contained in a one million Hz ultrasonic cleaning chamber. The 谠 converter target can be a semiconductor substrate. The comparator can be an operational amplifier. Another embodiment includes a converter core source that includes a class of evaluations, a variable DC power supply, and a comparator. The Class E evaluation has one of the input inputs of one of the one million Hz super chopper converters connected to a one million Hz ultrasonic cleaning chamber. The variable power supply has a control input and an output connected to one of the RF generators. The ratio J includes a first input A connected to a set point voltage source, a first input coupled to the RF generator RF output, and a control signal output coupled to the variable DC power supply One of the voltage control inputs. The invention has the advantages of greatly shortening the cleaning processing time, because the force rate b of the sixth force can be used without damaging the substrate to be cleaned.

1292985 五、發明說明(16) (例如,沒有聲能「熱點」會產生)。由於施加至基板之過 多聲能,本發明藉以減少被損壞基板之數目。 自動調諳RF產生器亦可自動調整製程變化,例如不同 的清洗化學劑、基板之不同位置等,藉以提供更彈性與強 健的清洗製程。 本發明之其他實施樣態與優點將配合顯示例如本發明 之原理之附圖而從下述詳細說明得以更顯清楚。 四、【實施方式】1292985 V. INSTRUCTIONS (16) (For example, no sound energy "hot spots" will occur). The present invention thereby reduces the number of damaged substrates due to excessive acoustic energy applied to the substrate. The auto-tuning RF generator also automatically adjusts process changes, such as different cleaning chemistries, different locations on the substrate, etc., to provide a more flexible and robust cleaning process. Other embodiments and advantages of the invention will be apparent from the accompanying drawings. Fourth, [Implementation]

現在將說明自動並動態調整施加至轉換器之RF信號之 數個例示實施例。熟習本項技藝者將明白到本發明可在不 需要於此所提出之某些或所有具體細節的情況下被實施。 如上所述’增加基板清洗系統之清洗效果、效率以及 產能速率,同時降低損壞基板之可能性是非常重要的。這 些需求係因連續縮小之裝置尺寸與多數清洗系統係進展為 單一基板清洗系統之事實而加劇。Several illustrative embodiments of automatically and dynamically adjusting the RF signal applied to the converter will now be described. It will be apparent to those skilled in the art that the present invention may be practiced without some or all of the specific details set forth herein. As described above, it is very important to increase the cleaning effect, efficiency, and throughput rate of the substrate cleaning system while reducing the possibility of damage to the substrate. These demands are exacerbated by the fact that the size of the device has been continuously reduced and that most cleaning systems have evolved into a single substrate cleaning system.

圖2 A與2 B顯示依據本發明之一個實施例之一個動態的 單一基板清洗糸統2 0 0。圖2 A顯示此動態的單一基板清洗 糸統2 0 0之側視圖。圖2 B顯示此動態的單一基板清洗系統 2 0 0之俯視圖。基板2 0 2係被浸入裝在清洗容室2 〇 β内的洗 滌液2 0 4中。洗;條液2 0 4可以是去離子水(j) I水)或其他本項 技藝所熟知的清洗化學劑及其組合。 基板202實質上是圓的,且由三個或三個以上的邊緣 滾輪208Α、208B、208C(或類似的邊緣支持裝置)所支撐,2A and 2B show a dynamic single substrate cleaning system 200 in accordance with one embodiment of the present invention. Figure 2A shows a side view of this dynamic single substrate cleaning system. Figure 2B shows a top view of this dynamic single substrate cleaning system 200. The substrate 2 0 2 is immersed in a washing liquid 205 contained in the cleaning chamber 2 〇 β . Washing; strip 2 0 4 may be deionized water (j) I water) or other cleaning chemistry known in the art and combinations thereof. The substrate 202 is substantially circular and is supported by three or more edge rollers 208, 208B, 208C (or similar edge support means).

1292985 五、發明說明(17) —--- 俾能在將對基板202進行清洗製程時,可使基板2〇2旋轉 例如,朝方向209A旋轉)。邊緣滾輪2〇8A、2〇8B與2〇8(:之 一個或多個可被驅動(例如朝方向2〇9b驅動)’俾能朝方向 疑轉基板202。基板202可以高達大約5〇〇 RpM之速率 被旋轉。 干 。。轉換器210亦被包含成為清洗容室2〇6之一部份。轉換 ,2^0可以疋例如晶體之壓電元件,其可將信號轉換 ,發射至洗滌液204之聲能214。轉換器21〇可以是由例如、 ?!陶兗、鉛鍅鈦酸鹽、壓電石$、鎵磷酸鹽之麼電材料 所構成,其中壓電材料係接合至例如陶曼、碳化碎、不錄 鋼或鋁、或石英之諧振器。 如圖2 Β所示,轉換恭2 1 0可明顯小於基板2 〇 2。較小的 以更便宜地被製造,且亦可在從較小的轉換器 2j〇 I射之發射能量214衝擊之基板2〇2之較小區域中提供 改。控制。基板202之活化表面218(亦即,直上且有主動 ::或活性元件之表面)一般係面向轉換器21〇。然而,在 二、二κ轭例中,活化表面21 8可以位在轉換器2丨〇對面之 板202之側面上。 當基板202旋轉經過轉換器21〇時,三個邊緣滾輪 2〇8A、2〇8B、208C維持基板202與轉換器21〇距離大約一段 固定距離dl。距離dl可以在只有幾公羞(咖)至多達大約 1〇〇 _或更多之範圍内。距離dl係被選為匹配轉換器210 H抗之距離。纟-個實施例中,距離dl係被選為發射能 里之頻率之共振距離。或者,可選擇發射能量2 1 4之頻1292985 V. INSTRUCTION OF THE INVENTION (17) ----- When the substrate 202 is subjected to a cleaning process, the substrate 2〇2 can be rotated, for example, in the direction 209A. The edge rollers 2〇8A, 2〇8B and 2〇8 (one or more of which can be driven (e.g., driven in the direction 2〇9b) can be rotated toward the substrate 202. The substrate 202 can be up to about 5 inches. The rate of RpM is rotated. The dry converter 210 is also included as part of the cleaning chamber 2〇6. The conversion, 2^0 can be a piezoelectric element such as a crystal, which can convert the signal to the wash. The acoustic energy of the liquid 204. The transducer 21 can be composed of, for example, ??陶兖, lead bismuth titanate, piezoelectric stone, or gallium phosphate, wherein the piezoelectric material is bonded to, for example, Tauman, carbonized, non-recorded steel or aluminum, or quartz resonators. As shown in Figure 2, the conversion of Christine 2 1 0 can be significantly smaller than the substrate 2 〇 2. Smaller to be cheaper to manufacture, and also The control can be provided in a smaller area of the substrate 2〇2 that is impacted by the smaller transducer 2jI. The substrate 202 has an activation surface 218 (i.e., straight up and active:: or active). The surface of the component is generally oriented toward the transducer 21〇. However, in the second and second gamma yoke examples, the activation surface 21 8 may Positioned on the side of the board 202 opposite the converter 2. The three edge rollers 2〇8A, 2〇8B, 208C maintain the distance between the substrate 202 and the converter 21 as the substrate 202 rotates through the converter 21〇. A fixed distance dl. The distance dl can be in the range of only a few shy (coffee) up to about 1 〇〇 or more. The distance dl is chosen to match the distance of the converter 210 H. 纟 - an embodiment In the middle, the distance dl is selected as the resonance distance of the frequency in the emission energy. Alternatively, the frequency of the emission energy 2 1 4 can be selected.

1292985 五、發明說明(18) 率’因此距離d 1係為共振距離。在任何一個實施例中,於 共振情況下,最小反射能量2 1 6係從基板2 0 2反射回到轉換 器2 1 0。如上所述,反射能量2 1 6會妨礙發射能量2 1 4,其 會降低RF信號220之功率效率,並會降低對基板202之清洗 效果(例如,干擾圖案)。1292985 V. DESCRIPTION OF THE INVENTION (18) Rate 'The distance d 1 is the resonance distance. In either embodiment, in the case of resonance, the minimum reflected energy 2 16 is reflected from the substrate 202 to the converter 2 1 0. As described above, the reflected energy 2 16 interferes with the emission energy 2 1 4, which reduces the power efficiency of the RF signal 220 and reduces the cleaning effect on the substrate 202 (e.g., interference patterns).

然而’基板2 0 2會略微「搖擺」,以使基板2 0 2與轉換 器2 1 0之間的距離會在基板2 〇 2旋轉通過轉換器2 1 〇時,在 第一距離dl與第二距離d2之間改變。第一距離dl與第二距 離d2之間的差異可以高達大約〇· 5 mm( 0· 020忖)或甚至更 大。雖然改良的邊緣滾輪208A、20 8B、208C與其他類似技 術可能將基板202與轉換器210距離維持一段更一致的距離 d 1 ’但改良的邊緣滾輪無法保證一段絕對固定的距離d j, 因此仍會產生距離dl之變化。又,基板2〇2與轉換器21 〇之 間的距離同樣可為了其他理由而改變(例如將基板2〇2配置 在邊緣滾輪208A、208B、208C之内等)。如以下所將更詳 〔田《兒明的,基板2 0 2與轉換器2 1 〇之間的距離之變化會嚴袼 衝擊清洗系統2 0 0之性能與效率。However, the substrate 2 0 2 will be slightly "swinged" so that the distance between the substrate 2 0 2 and the converter 2 10 0 will be rotated at the substrate 2 〇 2 through the converter 2 1 , at the first distance dl and The distance between the two distances d2 changes. The difference between the first distance d1 and the second distance d2 can be as high as about 〇 5 mm (0·020 忖) or even greater. Although the improved edge rollers 208A, 20 8B, 208C and other similar techniques may maintain a more uniform distance d 1 ' between the substrate 202 and the transducer 210, the improved edge roller cannot guarantee an absolutely fixed distance dj, so A change in the distance dl is produced. Further, the distance between the substrate 2〇2 and the converter 21〇 can be changed for other reasons (e.g., the substrate 2〇2 is disposed within the edge rollers 208A, 208B, and 208C, etc.). As will be more detailed below [Tian Ming's, the change in the distance between the substrate 2 0 2 and the converter 2 1 会 will severely impair the performance and efficiency of the impact cleaning system 200.

曰轉換器210係連接至RF產生器212。圖2C係為依據本發 月=一個實施例之使用於例如上述圖2 a與2 B所說明的百萬 赫,超音波清洗系統2〇〇中之自動調諧RF產生器系統之方 $知作250之流程圖。在操作255中,RF產生器提供RF信號 給轉換器21〇。叮信號220可具有大約400 kHz至大約 z之間的頻率,但一般係在大約7〇〇 kHz至大約1 mHz之 曰。從轉換器2 1 0發射之高頻率聲能2丨4之波長,在洗滌液The chirp converter 210 is connected to the RF generator 212. Figure 2C is a diagram of an auto-tuning RF generator system in a megahertz, ultrasonic cleaning system 2, as illustrated in Figures 2a and 2B above, in accordance with the present embodiment. 250 flow chart. In operation 255, the RF generator provides an RF signal to the converter 21A. The chirp signal 220 can have a frequency between about 400 kHz and about z, but is typically between about 7 kHz and about 1 mHz. The high frequency acoustic energy emitted from the converter 2 1 0 is 2 丨 4 wavelength in the washing liquid

第26頁 1292985 五、發明說明(19) --------- 204中長度大約為ι·5 mm (0.060忖)。 在操作260中,至目標(例如基板2〇2)之距離會隨著目 標相對於轉換器210移動而改變。當距離心改變時,反射 能量2曰16之數量亦會改變,其乃因為當距離dl改變時,發 射能量2 1 4未必在共振中(亦即,轉換器2丨〇之阻抗是失配 的)_。在操作270中,係自動並動態調諧評產生器212, 能經常調諧RF信號220,以在距離。改變時修正任何阻抗 失配。 、因為發射能量214之波長大約為1. 5 mm(〇· 〇6〇吋),所 以只有〇· 50 mm(0· 020吋)之移動能導致顯著的阻抗變化, 藉以產生例如50%之多的電壓變化以及在大約25%與1〇〇%之 間的功率變化。在沒有自動調諧RF產生器以補償di之變化 的情,下,必須將發射能量214之峰值能階減少至基板2〇2 之能篁吸收能力(能量閾值)未超過之足夠低的數值,俾能 避免峰值發射能量214損壞基板202。 、、自動凋谐RF產生器2 1 2可被自動調諧以經由變化法則 來補偵距離d 1之變動。在一個實施例中,偵測峰值電壓, 俾此將RF產生器212維持於rf信號2 20之阻抗最佳化頻率。 在另一個實施例中,維持電壓之相位,俾能產生RF信號 220之阻抗最佳化頻率。在又另一個實施例中,可調整電 源供應α卩以使r F彳§號2 2 0阻抗最佳化。許多實施例亦可與 單一自動調諧RF產生器系統結合使用。 、 押/圖3係為依據本發明之一個實施例之自動調諳RF產生 為系統30 0之方塊圖。自動調諧RF產生器302提供反饋控制Page 26 1292985 V. INSTRUCTIONS (19) --------- The length of 204 is approximately ι·5 mm (0.060忖). In operation 260, the distance to the target (e.g., substrate 2〇2) changes as the target moves relative to converter 210. When the distance is changed, the amount of reflected energy 2曰16 also changes, because when the distance dl changes, the emission energy 2 14 is not necessarily in resonance (ie, the impedance of the converter 2 is mismatched). )_. In operation 270, the generator 212 is automatically and dynamically tuned to constantly tune the RF signal 220 at a distance. Correct any impedance mismatch when changing. Since the wavelength of the emitted energy 214 is about 1.5 mm (〇·〇6〇吋), only the movement of 〇·50 mm (0·020吋) causes a significant impedance change, thereby generating, for example, 50%. The voltage change and the power variation between approximately 25% and 1%. In the absence of an auto-tuning RF generator to compensate for the change in di, the peak energy level of the transmitted energy 214 must be reduced to a sufficiently low value that the energy absorption (energy threshold) of the substrate 2〇2 is not exceeded, 俾The peak emission energy 214 can be prevented from damaging the substrate 202. The automatic harmonic RF generator 2 1 2 can be automatically tuned to compensate for the variation of the distance d 1 via the law of variation. In one embodiment, the peak voltage is detected, thereby maintaining the RF generator 212 at the impedance optimization frequency of the rf signal 220. In another embodiment, the phase of the voltage is maintained and the impedance optimized frequency of the RF signal 220 is generated. In yet another embodiment, the power supply α卩 can be adjusted to optimize the r F彳§ 2 2 0 impedance. Many embodiments can also be used in conjunction with a single auto-tuning RF generator system. 3 is a block diagram of the system 30 0 for automatic tuning RF generation in accordance with an embodiment of the present invention. Auto-tuning RF generator 302 provides feedback control

1292985 五、發明說明(20) 信號給電壓控制振盪器(VC〇) 306,俾能調整從VCO 306輸 出之VCO RF信號310之頻率。VCO 3 0 6亦可被包含成為RF產 生器302之一部分。DC電源供應部3 12係被包含在RF產生器 3 02中’並提供DC功率以供RF產生器302中之VCO RF信號 310之放大用。自動調諧RF產生器3 02包含在RF產生器3〇2 之輸入部分中之電感器314。放大vc〇 RF信號310之一個或 多個放大器320亦被包含在RF產生器302中。 在一個實施例中,放大器320係為CMOS,而VCO RF信 號310係被施加至閘極G。汲極D係連接至㈣偏壓導執(1)][心 rail) 322 ’而源極S係連接至接地電位導執3 24。至源極 (峰值Vds)偵測斋3 2 6之峰值電壓沒極係連接橫越過放大器 3 2 0之沒極d與源極s端子,俾能擷取至放大器3 2 〇之源極之 峰值電壓汲極。 放大器320之輸出係連接至e類負載網路33〇之輸入。e 類負載網路330係為熟習本項技藝者所熟知之用以執行 源\亦即RF產生器302 )與RF負載(亦即轉換器332 )之間的大 規杈阻抗匹配功能之普通元件。E類負載網路3 3 〇 一般包含 LC網路。E類負載網路33〇之輸出係連接至對轉換器332之 圖4係為依據本發明之一個實施例之自動調諧rf產生 在RF產生器302正將RF信號22〇提供給轉換器332 寻之方法操作4 0 0之流程圖。在極你4 Π G ΤΛ ^ li t £340 ^,1 含在内’以將從DC電源供應部312 亦可被包 丨運接至比較器裝置340之1292985 V. INSTRUCTION DESCRIPTION (20) The signal is applied to a voltage controlled oscillator (VC〇) 306, which is capable of adjusting the frequency of the VCO RF signal 310 output from the VCO 306. The VCO 306 can also be included as part of the RF generator 302. The DC power supply section 3 12 is included in the RF generator 302 and provides DC power for amplification of the VCO RF signal 310 in the RF generator 302. The auto-tuning RF generator 322 includes an inductor 314 in the input portion of the RF generator 3〇2. One or more amplifiers 320 that amplify the vc〇 RF signal 310 are also included in the RF generator 302. In one embodiment, amplifier 320 is CMOS and VCO RF signal 310 is applied to gate G. The drain D is connected to (iv) a biasing conductor (1)] [heart rail) 322 ' and the source S is connected to a ground potential pilot 3 24 . To the source (peak Vds) detection, the peak voltage of the 3 3 6 is not connected across the amplifier 3 2 0 and the source s terminal, which can be taken to the peak of the source of the amplifier 3 2 〇 Voltage bungee. The output of amplifier 320 is coupled to the input of class e load network 33A. The class-e load network 330 is a common component well known to those skilled in the art for performing the large-scale impedance matching function between the source, i.e., RF generator 302, and the RF load (i.e., converter 332). Class E load network 3 3 〇 Generally contains an LC network. The output of the class E load network 33 is coupled to the pair of converters 332. FIG. 4 is an automatic tuning rf generation in accordance with an embodiment of the present invention. The RF generator 302 is providing the RF signal 22 to the converter 332. The method operates a flowchart of 400. The pole 4 Π G ΤΛ ^ li t £340 ^,1 is included to be transported from the DC power supply unit 312 to the comparator device 340.

第28頁 1292985Page 28 1292985

^個電壓之振幅調整或減少至比較器裝置3 4 〇可用的位 準比例 '微分與積分控制亦可被包含在比較器裝置340 内,因此可選擇控制信號之改變速度與數量。 在操作410中’峰值I係由峰值I偵測器326所偵測, 並被施加至比較器裝置340之第二輸入。峰值Vds偵測器326 亦可包έ電胃路’以將從峰值L偵測器3 2 6連接至比較器裝 置340之電壓之振幅調整或減少至比較器裝置34〇可用的位 準。The amplitude of the voltage is adjusted or reduced to the level of the comparator device 34. The differential and integral control can also be included in the comparator device 340, so that the rate and amount of change of the control signal can be selected. In operation 410, the 'peak I' is detected by the peak I detector 326 and applied to the second input of the comparator device 340. The peak Vds detector 326 may also include an electrogastrochannel ' to adjust or reduce the amplitude of the voltage connected from the peak L detector 326 to the comparator device 340 to a level available to the comparator device 34.

二抑舉例而言’ DC電源供應部312可能輸出2〇〇 VDC,而比 較器裝置340能夠比較5 VDC信號,因此分壓器網路342可 將DC電源電壓從2〇〇 vDC調整成5 VDC之電壓(表示比較器 裝置340之200 VDC)。同樣地,峰值vds偵測器326亦可包含 例如分壓器網路之比例縮放裝置,俾能使施加至比較器裝 置340之實際峰值vds電壓大約為5 VDC。 在操作41 5中,比較器裝置3 4 〇比較峰值vds與源自d [電 源供應部31 2之DC電源電壓。如果DC電源電壓係為期望比 例之峰值Vds,則沒有修正信號從比較器裝置被輸出,而方 法操作繼續進行回到上述操作4 〇 5中。For example, 'DC power supply 312 may output 2 VDC, and comparator device 340 can compare 5 VDC signals, so voltage divider network 342 can adjust DC supply voltage from 2 〇〇 v DC to 5 VDC. The voltage (representing 200 VDC of comparator device 340). Similarly, peak vds detector 326 may also include a scaling device such as a voltage divider network that enables the actual peak vds voltage applied to comparator device 340 to be approximately 5 VDC. In operation 41 5, the comparator means 34 4 compares the peak value vds with the DC power supply voltage derived from d [power supply section 31 2 . If the DC supply voltage is the peak Vds of the desired ratio, no correction signal is output from the comparator means, and the method operation proceeds back to the above operation 4 〇 5.

或者,如果DC電源電壓並非期望比例之峰值,則方 法操作繼續進行至操作420。在操作420中,對應^修正信 號係從比較器裝置340被輸出至VCO 30 6以調整VCO輸出作 號3 1 0之頻率’而方法操作繼續進行回到上述操作4 〇 5中。 修正信號可將VCO RF信號3 1 0之頻率調整至依所需之較高 或較低頻率。Alternatively, if the DC supply voltage is not the peak of the desired ratio, then the method operation proceeds to operation 420. In operation 420, the corresponding correction signal is output from the comparator device 340 to the VCO 30 6 to adjust the frequency of the VCO output number 3 1 0 and the method operation proceeds back to the above operation 4 〇 5. The correction signal adjusts the frequency of the VCO RF signal 3 1 0 to the desired higher or lower frequency.

12929851292985

D c電源電壓與峰值vd s之期望比例係取決 3〇2與轉換器332中之各種决於RF產生益 ^ +冋的組件之特別值,以及矸能 包含RF產生器302與轉換哭^, 乂及了此 . .9ηη, /、得換為3 32之糸統(例如上述圖2之基板 ,月洗糸、榻0)。纟-個實施例中,期望 至大約6 : 1之範圍内,直由處义么也 係在大、、U · i ^ ^ m ^ _ An ^ ,、中峰值L係為比DC電源電壓更高 士電。在一個貫轭例中,期望比例大約為4 : i,而更明 確大約為3· 6 : 1 ,直中嵝丄从拉士人μ 阳文月 q 八 值I大、力專於DC電源電壓之大約 ci. b 借 ° 326之圖-“Λ為依f卢發明之一個實施例之峰值^偵測器 續連接的電容器5〇2、5〇4係橫越過放大 : /亟一源極S而連接。二極體506係與電容器504 並聯連接。在操作上,電容器502將被放大RF信號之每個 周期之峰值vds連接至電容器5〇4。電容器5〇4儲存從放大器 320輸出之被放大號之每個周期的峰值l。二極體5〇6 H峰值vds,並經由峰值Vds端子將峰值i連接至比較器裝 置340。 圖5B係為依據本發明之一個實施例之由峰值電壓偵測 器326所偵測的峰值電壓(VdJ之波形圖55〇。當放大器裝置 3 2 0正在執行時’因為只有少數壓降橫越過放大器3 2 〇,所 以峰值電壓偵测器326並未偵測到太多電壓。當放大器停 止執行,,接著,釋放儲存於RF產生器3〇2與負載網路33〇 =電感器與電容器中的電流,藉以產生如由峰值電壓偵測 器326所偵測到的電壓波形5 52、55 4、556。放大器320係 被設計成以在横越過放大器32〇之電壓降至零時,放The expected ratio of the D c supply voltage to the peak value ν s depends on the particular value of the components of the converter 332 that depend on the RF generation benefit, and the RF generator 302 and the conversion cry. With this, .9ηη, /, can be replaced by 3 32 (such as the substrate of Figure 2 above, monthly wash, couch 0). In one embodiment, it is desirable to be in the range of about 6:1, and the straight line is also in the large, U · i ^ ^ m ^ _ An ^ , and the middle peak L is more than the DC power supply voltage. Coats electricity. In a yoke example, the expected ratio is about 4: i, and more definitely about 3·6: 1 , straight from the squats, the yang, the moon, the octet, the octave I, the force is dedicated to the DC supply voltage. About ci. b borrowed from the graph of 326 - "The peak of one embodiment of the invention of the invention is continuously connected to the capacitor 5 〇 2, 5 〇 4 series across the amplification: / 亟 a source S The diode 506 is connected in parallel with the capacitor 504. In operation, the capacitor 502 connects the peak value vds of each period of the amplified RF signal to the capacitor 5〇4. The capacitor 5〇4 stores the output from the amplifier 320. The peak value of each period of the amplification number is 1. The diode 5 〇 6 H peak vds, and the peak i is connected to the comparator device 340 via the peak Vds terminal. Figure 5B is the peak voltage according to an embodiment of the present invention. The peak voltage detected by the detector 326 (the waveform of the VdJ is 55 〇. When the amplifier device 3 2 0 is being executed 'the peak voltage detector 326 does not detect because only a small number of voltage drops across the amplifier 3 2 〇 Too much voltage is measured. When the amplifier stops executing, then, release is stored in RF The currents 3〇2 and the load network 33〇=the currents in the inductors and capacitors, thereby generating the voltage waveforms 5 52, 55 4, 556 as detected by the peak voltage detector 326. The amplifier 320 is designed When the voltage across the amplifier 32 降至 drops to zero, put

第30頁 1292985 發明說明 大器320開始執行,從而建立一個調諧放大電路。調諳放 大電路係受轉換斋3 3 2之共振之任何改變(例如,基板2 〇 2 相對於轉換器3 3 2之任何移動)影響,這些改變係經由負載 網路330反映以改變所偵測的波形5 52、554、556。當在共 振中時,放大器3 2 0係作為一個相當調諧的e類放大哭且波 形554會產生。當脫離共振時,轉換器33 2可具有容;;或感 抗,藉以導致容抗或感抗的增加,其使E類負載網路33〇失 調。失調E類負載網路330導致具有太高的峰值電壓V 1或 太低的峰值電壓V3之波形552或556。Page 30 1292985 DESCRIPTION OF THE INVENTION The amplifier 320 begins execution to establish a tuning amplifier circuit. The tuned amplifying circuit is affected by any change in the resonance of the converted singularity (eg, any movement of the substrate 2 〇 2 relative to the converter 332) that is reflected by the load network 330 to change the detected Waveform 5 52, 554, 556. When in resonance, amplifier 3 2 0 is a relatively tuned class e amplification cry and waveform 554 is generated. When out of resonance, the converter 33 2 may have a capacitance; or an inductance, thereby causing an increase in capacitive reactance or inductive reactance, which causes the class E load network 33 to be out of tune. The offset Class E load network 330 results in a waveform 552 or 556 having a peak voltage V1 that is too high or a peak voltage V3 that is too low.

經由貫驗與計算,吾人已發現峰值電壓(Vds)係為轉換 态332之共振之函數,而峰值Vds相較於所施加的…偏壓具 有係為RF產生電路302之組件之函數之共振比率。舉例而 言,在一般RF產生器中,與源自Dc電源供應部之此偏壓比 較而言’比率大約為4 :1之峰值電壓,或以不同方式來Through continuity and calculation, we have found that the peak voltage (Vds) is a function of the resonance of the transition state 332, and the peak Vds has a resonance ratio as a function of the components of the RF generation circuit 302 compared to the applied bias voltage. . For example, in a general RF generator, the ratio is approximately 4:1 peak voltage compared to the bias voltage derived from the Dc power supply, or in a different manner.

說’源自DC電源供應部3 1 2之偏壓大約4倍的峰值表示轉 換器3 3 2係在共振中。 SIt is said that the peak value of about four times the bias voltage from the DC power supply unit 3 1 2 indicates that the converter 323 is in resonance. S

圖6係為依據本發明之一個實施例之自動調諧評產生 裔系統60 0之方塊圖。從VCO 30 6輸出之rf信號31 0之電壓 之相位P1係與輸入至轉換器332之電壓之相位?2作比較。 如果電壓相位P1與P2並未匹配,則將修正信號施加至^〇 306之頻率控制輸入。rF產生器系統6〇〇包含RF產生器 6 0 2。RF產生态6 0 2可以是熟習本項技藝者所熟知之任何型 式之RF產生器。相位偵測器604包含兩個輸入6〇6、6〇8。Figure 6 is a block diagram of an automated tuning evaluation genre system 60 in accordance with one embodiment of the present invention. The phase P1 of the voltage of the rf signal 31 0 output from the VCO 30 6 is the phase of the voltage input to the converter 332? 2 for comparison. If the voltage phases P1 and P2 do not match, a correction signal is applied to the frequency control input of 306. The rF generator system 6A includes an RF generator 6 0 2 . The RF generating state 602 can be any type of RF generator that is well known to those skilled in the art. Phase detector 604 includes two inputs 6〇6, 6〇8.

第31頁 1292985 五、發明說明(24) 二:二f:敫器網路),其可將偵測到的信號(例如相位 相位摘測器604可用的位準。相位偵測 測琴/、丨習本項技藝者所熟知之任何型式之相位摘 ^ ^ : β偵測亚比較各個輸入電壓信號之相位。習知技 何相位偵測器比較輸出叮信號22〇之電壓與電流之相 測試已顯示出比較電壓相㈣納可更簡單且容易被 、、且^供所需要的信號,據此用以調整vc〇 306。 抑/圖7係為依據本發明之一個實施例之自動調諧心產生 器系統60 0之方法操作之流程圖。在操作7〇5中,將來自Page 31 1292985 V. Invention Description (24) Two: two f: the device network), which can detect the detected signal (for example, the phase phase picker 604 available level. Phase detection piano /, Ignore the phase of any type that is well known to those skilled in the art. ^ : β detects the phase of each input voltage signal. The phase detector compares the voltage and current of the output 叮 signal 22〇. It has been shown that the comparison voltage phase (four) nanosine can be more simple and easy to be used, and the required signal is used to adjust vc 〇 306. Fig. 7 is an automatic tuning core according to an embodiment of the present invention. Flowchart of the method operation of the generator system 60. In operation 7〇5, it will come from

VCO 306之輸入RF信號310施加至RF產生器6 0 2,且RF產生 器602將輸入RF信號310予以放大並將被放大的心信號22〇 連接至轉換器332。 在操作710中,第一輸入6〇6將從vc〇 3〇6輸出之心信 號3 1 0之電壓之第一相位(p丨)連接至相位偵測器6 〇 4。在操 作715中,第二輸入608將輪入至轉換器332之信號之電壓 之第二相位(P 2 )連接至相位偵測器6 〇 4。The input RF signal 310 of the VCO 306 is applied to the RF generator 602, and the RF generator 602 amplifies the input RF signal 310 and connects the amplified cardiac signal 22A to the converter 332. In operation 710, the first input 6〇6 connects the first phase (p丨) of the voltage of the heart signal 3 1 0 output from vc〇 3〇6 to the phase detector 6 〇 4. In operation 715, the second input 608 connects the second phase (P 2 ) of the voltage of the signal that is clocked into the converter 332 to the phase detector 6 〇 4.

在操作720中’相位偵測器比較相位P1與相位p2以決 定相位P1是否匹配相位P2。圖8A-8C顯示依據本發明之一 個實施例之三例在相位P1與P2之間的關係圖。在圖8A中, 圖800顯示相位P1領先相位P2(例如,相位P1峰值位於時間 T1,而相位P2峰值位於後來的時間T2)。這表示轉換器332 之阻抗並未被匹配,且轉換器332係將反射信號222施加進 入RF產生器602。 在圖8B中,圖820顯示相位P1落後相位P2(例如,相位In operation 720, the phase detector compares phase P1 with phase p2 to determine if phase P1 matches phase P2. Figures 8A-8C show the relationship between phases P1 and P2 for three examples in accordance with one embodiment of the present invention. In Fig. 8A, Fig. 800 shows that phase P1 leads phase P2 (e.g., phase P1 peak is at time T1 and phase P2 peak is at a later time T2). This means that the impedance of converter 332 is not matched and converter 332 applies reflected signal 222 to RF generator 602. In FIG. 8B, FIG. 820 shows that phase P1 is behind phase P2 (eg, phase

第32頁 1292985 五、發明說明(25) P2峰值位於時間T1,而相位P1峰值位於後來的時間T2)。 這表示轉換器3 3 2之阻抗並未被匹配,且轉換器3 3 2又將反 射信號222施加進入RF產生器602。由轉換器332輸出之反 射信號可建設性地或破壞性地阻礙從RF產生器6 0 2輸出之 信號。 在圖8 C中,圖8 5 0顯示相位P1等於相位p 2 (例如,相位 P1與相位P 2峰值兩個都位於時間T1 )。這表示轉換器3 3 2之 阻抗係被匹配,且轉換器3 3 2並未將任何反射信號施加進 入RF產生器602。Page 32 1292985 V. INSTRUCTIONS (25) The P2 peak is at time T1, and the phase P1 peak is at a later time T2). This means that the impedance of the converter 332 is not matched, and the converter 332 applies the reflected signal 222 to the RF generator 602. The reflected signal output by converter 332 can constructively or destructively block the signal output from RF generator 602. In Fig. 8C, Fig. 85 shows that phase P1 is equal to phase p2 (for example, both phase P1 and phase P2 peak are at time T1). This means that the impedance of converter 332 is matched and converter 332 does not apply any reflected signals into RF generator 602.

如果在操作72 0中相位P1與相位P2係相等,則方法操 作在操作7 0 5繼續(重複)。然而,如果在操作7 2 〇中相位p i 與相位P2並不相等,則方法操作繼續進行至操作73〇。在 操作730中,適當的控制信號係被施加至^〇 3〇6之頻率控 制輸入以據此調整RF信號3丨〇之頻率,而方法操作於操作 M5繼續(重複)。施加至vc〇 3〇6之頻率控制輸入之控制信 號可將頻率調整成較高頻率,以因應相位p丨領先相位p2之 情況。或者,施加至VCO 30 6之頻率控制輸入之控制信號 可將頻率調整成較低頻率,以因應相位p丨落後相位?2 況。 旧If phase P1 and phase P2 are equal in operation 72 0, then the method operation continues (repetition) at operation 705. However, if phase p i and phase P2 are not equal in operation 7 2 , the method operation proceeds to operation 73 . In operation 730, an appropriate control signal is applied to the frequency control input of 〇3〇6 to adjust the frequency of the RF signal 3丨〇 accordingly, and the method operates at operation M5 to continue (repeated). The control signal applied to the frequency control input of vc〇 3〇6 adjusts the frequency to a higher frequency to accommodate phase p2 in response to phase p丨. Alternatively, the control signal applied to the frequency control input of the VCO 30 6 can adjust the frequency to a lower frequency to account for the phase p丨 behind the phase? 2 conditions. old

^動調諧RF產生器系統60 0亦可包含控制放大器62〇, 其可藉由相位偵測器6〇4將控制信號輸出調整成正確信號 位準以控制vc〇 3 〇 6。控制放大器β 2 〇亦可包含一設定點輸 :二戶控制放大器620可結合設定點輸入與來自相位偵’ ^工制#唬輸入。依此方式,VC〇 RF信號31 〇可藉由The tuned RF generator system 60 0 can also include a control amplifier 62 〇 that can adjust the control signal output to the correct signal level by the phase detector 6 〇 4 to control vc 〇 3 〇 6. The control amplifier β 2 〇 can also include a set point input: the two-home control amplifier 620 can be combined with the set point input and the input from the phase detection system. In this way, the VC〇 RF signal 31 can be used by

第33頁 1292985 五、發明說明(26) 該設定點而被選擇,然後藉由相位偵測器6 〇 4之控制信號 輸出可自動調整所選擇的設定點。 上述圖3至8C所說明之系統與方法可以以非常高的校 正速度自動調諧RF產生器3 0 2、6 0 2 (例如,在輸ARF信號 310之每個周期會導致後來的RF信號310之頻率與輸出RF信 號220之修正)。因此,輸入RF信號310之頻率可在基板2〇2 每次旋轉期間譬如被校正多次,藉以更加正確控弗f施加至 基板202之聲能214。 舉例而言’如果基板2 0 2每分鐘旋轉6 〇次(β 〇 r ρ μ )(亦 即,每秒旋轉1次)且RF信號310大約為! ΜΗζ,則在基板 202每次旋轉期間RF信號310之頻率可被調整每秒大^ 一百 萬次(亦即,每微秒一次)。這種增加控制施加至基板2〇2 之聲能214意味著平均能量可以是非常接近發射能量214之 最小能量谷部與最大能量峰值。因此,較高的平均能量可 被施加至基板2 0 2,藉以大幅地縮短清洗製程時間並改善 清洗效果。 圖9係為依據本發明之一個實施例之自動調諧rf產生 器系統900之方塊圖。此系統包含連接至RF產生器6〇2之 入之VCO 306。可變DC電源供應部9〇2係連接至以產生哭’ 602,並提供DC功率給RF產生器用以放大來自vc〇 3〇6:rf 信號310 〇RF產生器602之輸出係連接至轉換器332。 一般習知技術之聲能清洗系統集中在維持對轉換器 332之固定淨功率輸入(亦即,RF信號22〇之傳輸功 反射信號222之反射功率)。經由實驗,吾人已發現到如果Page 33 1292985 V. INSTRUCTIONS (26) The set point is selected and the selected set point is automatically adjusted by the control signal output of phase detector 6 〇 4. The systems and methods illustrated in Figures 3 through 8C above can automatically tune the RF generators 3 0 2, 6 0 2 at very high correction speeds (e.g., each cycle of the ARF signal 310 will result in a subsequent RF signal 310). Frequency and correction of output RF signal 220). Thus, the frequency of the input RF signal 310 can be corrected as many times during each rotation of the substrate 2〇2, thereby more accurately controlling the acoustic energy 214 applied to the substrate 202. For example, if the substrate 2 0 2 is rotated 6 times per minute (β 〇 r ρ μ ) (that is, rotated once per second) and the RF signal 310 is approximately! That is, the frequency of the RF signal 310 during each rotation of the substrate 202 can be adjusted by a factor of one million per second (i.e., once every microsecond). This increase in control of the acoustic energy 214 applied to the substrate 2〇2 means that the average energy can be a minimum energy valley and a maximum energy peak that are very close to the emission energy 214. Therefore, a higher average energy can be applied to the substrate 2 0 2, thereby greatly shortening the cleaning process time and improving the cleaning effect. Figure 9 is a block diagram of an auto-tuning rf generator system 900 in accordance with one embodiment of the present invention. This system includes a VCO 306 that is coupled to the RF generator 6〇2. The variable DC power supply unit 9〇2 is connected to generate a crying '602 and provides DC power to the RF generator for amplifying the output from the vc〇3〇6:rf signal 310 〇RF generator 602 to the converter 332. A conventional prior art acoustic energy cleaning system focuses on maintaining a fixed net power input to converter 332 (i.e., the reflected power of the transmitted signal reflected signal 222 of the RF signal 22). Through experiments, we have found out if

1292985 五、發明說明(27) RF # 5虎220之電壓維持為固定電壓,則從轉換器332輸出之 發射能篁214之振幅實質上是固定的。又,將RF信號22〇之 電壓維持於低於基板202之能量閾值限制之固定位準,保 護基板以免受損壞,同時亦允許最大的聲能214被施加至 基板202。 圖1 0係為依據本發明之一個實施例之自動調譜產生 器糸統9 0 0之方法操作之流程圖。在操作1 〇 〇 5中,r f產生 器6 0 2將R F #號輸出至轉換器3 3 2。在操作1 〇 1 〇中,測量r ρ 信號輸出至轉換器3 32之電壓並將其連接至比較器9〇4。1292985 V. INSTRUCTION DESCRIPTION (27) The voltage of the RF #5 Tiger 220 is maintained at a fixed voltage, and the amplitude of the emission energy 214 output from the converter 332 is substantially fixed. Again, maintaining the voltage of the RF signal 22〇 at a fixed level below the energy threshold limit of the substrate 202 protects the substrate from damage while also allowing the maximum acoustic energy 214 to be applied to the substrate 202. Figure 10 is a flow diagram of the method operation of the automatic tone modulation generator system 900 in accordance with one embodiment of the present invention. In operation 1 〇 〇 5, the r f generator 6 0 2 outputs the R F # number to the converter 3 3 2 . In operation 1 〇 1 ,, the voltage of the r ρ signal is output to the converter 3 32 and connected to the comparator 9〇4.

在操作1015中,比較器904比較來自rf產生器602之RF 仏號輸出之電壓與期望設定點電壓。如果輸出電壓等於期 望設定點電壓,則方法操作繼續回到操作丨〇丨〇。或者,如 果輸出電壓並不等於設定點電壓,則方法操作繼續進行至 操作1 0 3 0。 ▲在操作1〇3〇中,比較器904將控制信號輸出至位於可 隻D C電源供應部9 〇 2上之控制輸入。舉例而言,如果輸出 電壓太高(亦即,大於期望設定點電壓),則^空制信號將減 少從可變DC電源供應部902之DC電壓輸出,藉以降低產生 在RF產生器602内之放大之增益,藉以降低藉由心產生器 602之RF信號輸出之振幅。比例、微分舆積分控制亦可被 包含在比較器904内,因此可選擇控制信號之改變速度與 數量。 计ΐ電路906亦可被包含在内,用以將來自μ產生器 6 02之電麼輸出調整至更容易與設定點信號作比較之位In operation 1015, comparator 904 compares the voltage from the RF signal output of rf generator 602 to the desired set point voltage. If the output voltage is equal to the desired setpoint voltage, the method operation continues to return to operation 丨〇丨〇. Alternatively, if the output voltage is not equal to the set point voltage, the method operation continues to operation 1 0 3 0. ▲ In operation 1〇3〇, the comparator 904 outputs a control signal to a control input located at the only DC power supply unit 9 〇 2 . For example, if the output voltage is too high (ie, greater than the desired set point voltage), the null signal will reduce the DC voltage output from the variable DC power supply 902, thereby reducing the generation in the RF generator 602. The gain of amplification is used to reduce the amplitude of the RF signal output by the heart generator 602. The proportional, differential 舆 integral control can also be included in the comparator 904 so that the rate and amount of change of the control signal can be selected. The meter circuit 906 can also be included to adjust the output from the μ generator 620 to a bit that is easier to compare with the set point signal.

1292985 五、發明說明(28) 準。舉例而言,計量電路906可將2 00 V RF信號調整至5 V,以供與5 V設定點信號作比較。計量電路9 〇 6可包含一 分壓器。計量電路9 0 6亦可包含一整流器以將從RF產生器 602輸出之RF信號220之電壓整流成DC電壓,以供與DC設定 點信號作比較。1292985 V. Description of invention (28) Standard. For example, metering circuit 906 can adjust the 200 V RF signal to 5 V for comparison with a 5 V setpoint signal. The metering circuit 9 〇 6 can include a voltage divider. Metering circuit 906 may also include a rectifier to rectify the voltage of RF signal 220 output from RF generator 602 to a DC voltage for comparison with a DC setpoint signal.

如上所述’上述圖3至8C所說明之方法可以以非常高 的校正速度自動調諧rF產生器3〇2、602 (例如,RF信號3 10 之每一些周期調諧一次)。反之,圖9與丨〇所說明之系統與 方法亦可自動調諧RF產生器602,但是以比圖3至8C所說明 的略微較慢的速率調諧,可是仍然比轉換器3 3 2之阻抗由 於基板2 0 2之運動產生可能的改變來得快。圖9與丨〇所說明 的系統與方法略微較慢,其一部分由於包含在可變DC電源 供應部9 0 2中之遲滯。 圖9與10所說明之系統與方法可與上述圖3至8(:所說明 ,一個或多個系統與方法結合被使用。如此,圖9與1〇所 ,明之系統與方法可用以提供調諧RF產生器之非常寬廣的 1巳®給轉換器332之動態共振使用,而上述圖3至8(:所說明 之系統與方法可被使用以提供調諧RF產生器之非常微小的 控制與調整。The method illustrated in Figures 3 through 8C above can automatically tune the rF generators 3, 2, 602 (e.g., every cycle of the RF signal 3 10 to be tuned once) at a very high correction speed. Conversely, the systems and methods illustrated in Figures 9 and 亦可 can also automatically tune the RF generator 602, but are tuned at a slightly slower rate than that illustrated in Figures 3 through 8C, but still due to the impedance of the converter 3 3 2 The movement of the substrate 2 0 2 produces a possible change. The system and method illustrated in Figures 9 and 略 are slightly slower, due in part to the hysteresis contained in the variable DC power supply unit 902. The systems and methods illustrated in Figures 9 and 10 can be used in conjunction with Figures 3 through 8 (described above, one or more systems and methods are illustrated. Thus, Figures 9 and 1 can be used to provide tuning The very wide 1巳® of the RF generator is used for dynamic resonance of the converter 332, while the above described Figures 3 to 8 (the illustrated system and method can be used to provide very small control and adjustment of the tuned RF generator.

圖11係為依據本發明之一個實施例之百萬赫茲超音波 二組1100之圖。百萬赫茲超音波模組丨1〇〇可以是一種例如 ^同擁有的美國專利申請號1〇/2 59, 〇23所說明之材料之 4赫茲超音波模組,此專利名稱為「百萬赫茲超音波基 处理模組(Megasonic Substrate pr〇cessingFigure 11 is a diagram of a megahertz ultrasonic two-group 1100 in accordance with one embodiment of the present invention. The megahertz ultrasonic module 〇〇1〇〇 can be a 4 Hz ultrasonic module of the material described in U.S. Patent Application Serial No. 1〇/2 59, 〇23, which is entitled to Hertzonic Substrate pr〇cessing

1292985 五、發明說明(29)1292985 V. Description of invention (29)

Module)」,申請日為2002年9月26日,其全部於此為所有 目的而列入參考資料。 百萬赫兹超音波模組1 1 0 〇包含一基板處理槽丨丨〇 2 (以 下以槽1102表示),與一槽密封蓋11〇4(以下以密封蓋11〇4 表示)。密封蓋百萬赫茲超音波轉換器丨丨〇 8與槽百萬赫茲 超音波轉換器11 0 6係分別被安置在密封蓋丨丨〇 4上以及在槽 II 0 2中,並k供百萬赫茲超音波能量以供同時處理基板Module), the application date is September 26, 2002, all of which is included in the reference for all purposes. The megahertz ultrasonic module 1 1 0 〇 includes a substrate processing tank 2 (shown below as slot 1102) and a slot seal cover 11〇4 (hereinafter indicated by a seal cover 11〇4). The sealed cover megahertz ultrasonic transducer 丨丨〇8 and slot megahertz ultrasonic transducer 11 0 6 are respectively placed on the sealing cover 丨丨〇4 and in the slot II 0 2, and k for millions Hertz ultrasonic energy for simultaneous processing of substrates

III 0之活性與免部表面。基板111 〇係被安置在複數個驅動 輪1112中,並利用基板穩定臂/輪1114而被固定在適當位 置。於一實施例中,係利用驅動裝置112〇與定位桿1122來 安置基板穩定臂/輪1 1 1 4,用以打開與關閉穩定臂/輪丨丨J 4 來接收、固定、並釋放在百萬赫茲超音波模組丨丨〇 〇中待被 處理之基板1110。密封蓋11 04可利用抬高並降低密封蓋 1104而使槽1 102維持靜止之驅動裝置系統(未顯示)而被置 於打開或關閉位置。或者,可移動槽丨丨〇 2以與密封蓋丨丨〇4 配合。 於一實施例中,基板穩定臂/輪1114係被設計成用以 朝水平方向固定並支撐基板1 1 1 0以供處理,並允許基板 111 0之旋轉。在其他實施例中,係朝垂直方向對基板丨丨i 〇 執行基板處理。在處理期間,驅動輪111 2接觸基板111 〇與 旋轉基板1110之周邊邊緣。基板穩定臂/輪1114可包含一 自由旋轉輪以允許基板111 〇旋轉,同時朝水平方向支撐基 板 1110。 ι 一旦將基板111 0設置於槽11 〇 2中,槽丨丨〇 2就會裝滿包III 0 activity and free surface. The substrate 111 is placed in a plurality of drive wheels 1112 and secured in place by a substrate stabilizing arm/wheel 1114. In one embodiment, the substrate stabilization arm/wheel 1 1 1 4 is disposed by the driving device 112 〇 and the positioning rod 1122 for opening and closing the stabilization arm/rim J 4 to receive, fix, and release in the hundred The substrate 1110 to be processed in the terahertz ultrasonic module. The seal cap 104 can be placed in an open or closed position by a drive system (not shown) that raises and lowers the seal cap 1104 to maintain the slot 1 102 stationary. Alternatively, the slot 2 can be moved to mate with the sealing cover 4. In one embodiment, the substrate stabilizing arm/wheel 1114 is designed to secure and support the substrate 1 1 1 0 in a horizontal direction for processing and to permit rotation of the substrate 111 0 . In other embodiments, substrate processing is performed on the substrate 丨丨i 〇 in a vertical direction. During processing, the drive wheel 111 2 contacts the peripheral edge of the substrate 111 and the rotating substrate 1110. The substrate stabilizing arm/wheel 1114 can include a freely rotating wheel to allow the substrate 111 to rotate while supporting the substrate 1110 in a horizontal direction. ι Once the substrate 111 0 is placed in the slot 11 〇 2, the slot 2 will be filled.

第37頁 1292985 五、發明說明(30) 含去離子(D I )水’或依所期望的處理化學之處理流體。一 旦封閉的百萬赫茲超音波模組11 〇 〇裝滿期望的處理流體, 並將基板111 0浸入其中,就可藉由槽百萬赫茲超音波轉換 杰1106(導引百萬赫茲超音波能量對抗面向槽百萬赫茲超 音波轉換裔1106之基板111〇之表面),以及藉由密封蓋百 萬赫兹超音波轉換器11 〇 8 (導引百萬赫茲超音波能量對抗 面向密封蓋百萬赫茲超音波轉換器1 1 〇 8之基板1 1 1 〇之表 面)達成基板111 0之百萬赫茲超音波處理。關於沈入在處 理化學中之基板1 1 1 〇,驅動輪丨丨丨2使基板丨丨丨〇旋轉以確保 k越過基板111 〇之活性與背部面兩者之整個表面之完全與 均勻的處理。於一實施例中,提供驅動馬達丨i i 6以經由機 械連接裔1 1 1 8 (例如,驅動皮帶、齒輪、鏈輪與鏈條等)來 驅動驅動輪11 1 2。 如上述圖3- 1 0所說明的自動調諧RF產生器系統可被連 接至密封蓋轉換器1 1 〇 8與槽轉換器丨丨〇 6之其中一個或兩 個’俾能在基板111 〇旋轉時,使各個轉換器丨丨〇 8、丨丨〇 6為 了各個轉換器11 〇 8、11 〇 6之動態阻抗而被固定並自動調 諧。 “ 圖1 2係為依據本發明之一個實施例之橫越過轉換器之 月匕里分佈圖1 2 〇 〇。相較於習知技術之以曲線丨2 〇與丨2 2顯示 之能窗而言’自動調諧評產生器會導致在曲線121〇與曲線 1212之間更加狹小的能窗12〇2。因為能窗12〇2係更加狹 所以可朝上移動能窗使其更接近基板之能量閾值T, 藉以提供更有效的聲能清洗製程。Page 37 1292985 V. INSTRUCTIONS (30) Treatment fluids containing deionized (D I ) water or depending on the desired treatment chemistry. Once the closed megahertz ultrasonic module 11 is filled with the desired processing fluid and the substrate 111 0 is immersed therein, the slot 1 megahertz ultrasonic wave can be converted to Jay 1106 (guided megahertz ultrasonic energy) Against the surface of the grooved megahertz ultrasonic conversion 1106 substrate 111), and by sealing the cover megahertz ultrasonic transducer 11 〇 8 (guided megahertz ultrasonic energy against the face-to-seal cover million Hz The surface of the substrate 1 1 1 of the ultrasonic transducer 1 1 〇 8) achieves a million Hz ultrasonic processing of the substrate 111 0 . Regarding the substrate 1 1 1 沉 sunk in the processing chemistry, the driving rim 2 rotates the substrate to ensure complete and uniform processing of k over the entire surface of the substrate 111 and the back surface. . In one embodiment, a drive motor 丨i i 6 is provided to drive the drive wheel 11 1 2 via a mechanical connection 1 1 1 8 (e.g., drive belt, gear, sprocket, chain, etc.). The auto-tuning RF generator system as illustrated in Figures 3-1 above can be connected to one or both of the sealed cover converters 1 1 〇 8 and the slot converter 丨丨〇 6 to be rotated on the substrate 111 At this time, each of the converters 丨丨〇8, 丨丨〇6 is fixed and automatically tuned for the dynamic impedance of each of the converters 11 〇 8, 11 〇 6. Figure 2 is a distribution of the cross-over converter in the month of the converter according to one embodiment of the present invention. Compared to the prior art, the energy windows shown by the curves 丨2 〇 and 丨2 2 The 'automatic tuning evaluation generator' will result in a narrower energy window 12〇2 between the curve 121〇 and the curve 1212. Since the energy window 12〇2 is more narrow, the energy window can be moved upwards to bring it closer to the energy of the substrate. The threshold T is used to provide a more efficient acoustic energy cleaning process.

第38頁 1292985 五、發明說明(31) 如於此結合本發明之說明所使用的,專門用語「大 約」意指+/ - 1 0 %。舉例而言,片語「大約2 5 0」表示在 22 5與275之間的範圍。吾人將更進一步明白到以圖4、7與 1 0之操作表示的指令並未被要求要按照所顯示之順序來執 行,且以這些操作表示之所有處理對實現本發明可能不是 必要的。 雖然為了清楚理解之目的已相當詳細說明上述發明, 但吾人將明白到可能在以下申請專利範圍之範疇内實行某 些改變與修改。因此,本實施例係被視為例示的而非限制 的,且本發明並未受限於於此所提供之細節,但可能在以 下申請專利範圍之範疇與等效設計之内變化。Page 38 1292985 V. INSTRUCTIONS (31) As used herein in connection with the description of the present invention, the term "about" means +/ - 10%. For example, the phrase "about 250" indicates a range between 22 5 and 275. It will be further understood that the instructions represented by the operations of Figures 4, 7 and 10 are not required to be performed in the order shown, and that all of the processing represented by these operations may not be necessary to practice the invention. Although the invention has been described in considerable detail for the purpose of clarity of the invention, it is understood that certain changes and modifications may be made within the scope of the following claims. Therefore, the present embodiments are to be considered as illustrative and not restrictive, and the invention is not limited to the details of the invention, but may vary within the scope and equivalents thereof.

1292985 圖式簡單說明 五、【圖式簡單說明】 本發明將藉由聯合附圖之下述詳細說明而輕易理解, 且相同的蒼考數字標示相同的構造元件。 圖1 A係為典型的整批基板清洗系統之圖。 圖1 B係為整批基板清洗系統之俯視圖。 圖1 c係為習知技術之提供一個或多個轉換器之RF供應 之概要圖。 圖1 D係為典型的轉換器1 8 b。 圖1 E係為橫越過轉換器之能量分佈圖。 圖2A與2B顯示依據本發明之一個實施例之動態的單一 基板清洗系統。 圖2 C係為依據本發明之一個實施例之使用於例如上述 圖2 A與2B所說明的百萬赫茲超音波清洗系統中之自動調諧 RF產生器系統之方法操作之流程圖。 圖3係為依據本發明之一個實施例之自動調諧μ產生 器系統之方塊圖。 圖4係為依據本發明之一個實施例之自動調諧μ產生 器系統在RF產生器正將RF信號提供給轉換器時之方法操作 之流程圖。 ” 圖5A係為依據本發明之一個實施例之峰值、偵測器之 圖5B係為依據本發明之一個實施例之由峰值 器所偵測之峰值電壓(Vds)之波形圖。 电^彳貝涮 圖6係為依據本發明之一個實施例之自動調譜μ產生BRIEF DESCRIPTION OF THE DRAWINGS [0009] [Brief Description of the Drawings] The present invention will be readily understood by the following detailed description in conjunction with the accompanying drawings, and the same reference numerals indicate the same structural elements. Figure 1A is a diagram of a typical bulk substrate cleaning system. Figure 1 B is a top view of the entire batch of substrate cleaning system. Figure 1 c is a schematic diagram of an RF supply for one or more converters of the prior art. Figure 1 D is a typical converter 1 8 b. Figure 1 E is an energy distribution diagram across the converter. 2A and 2B show a dynamic single substrate cleaning system in accordance with one embodiment of the present invention. Figure 2C is a flow diagram of the method operation of an auto-tuning RF generator system for use in a megahertz ultrasonic cleaning system such as that illustrated in Figures 2A and 2B above, in accordance with one embodiment of the present invention. 3 is a block diagram of an auto-tuning μ generator system in accordance with one embodiment of the present invention. 4 is a flow diagram of the method operation of an auto-tuning μ generator system in accordance with one embodiment of the present invention when an RF generator is providing an RF signal to a converter. 5A is a waveform diagram of a peak voltage (Vds) detected by a peak device according to an embodiment of the present invention. FIG. 5B is a waveform diagram of a peak and a detector according to an embodiment of the present invention. Bellow Figure 6 is an automatic modulation μ generation according to an embodiment of the present invention.

第40頁 1292985 圖式簡單說明 器系統之方塊圖。 圖7係為依據本發明之一個實施例之自動調諧RF產生 器系統之方法操作之流程圖。 圖8 A - 8 C顯示依據本發明之一個實施例之三例在相位 P1與相位P2之間的關係。 圖9係為依據本發明之一個實施例之自動調諧R F產生 器系統之方塊圖。 圖1 0係為依據本發明之一個實施例之自動調諧RF產生 器系統之方法操作之流程圖。 圖11係為依據本發明之一個實施例之百萬赫茲超音波 模組之圖。 圖1 2係為依據本發明之一個實施例之橫越過轉換器之 能量分佈圖。 元件符號說明: 1 0〜基板清洗系統 1卜槽 12〜基板載體 14〜基板 1 5〜發射能量 1 6〜洗滌液 1 7〜反射能量 18A、18B、18C〜轉換器 19A、19B〜定位夾具Page 40 1292985 Schematic diagram of the system. Figure 7 is a flow diagram of the operation of the method of automatically tuning an RF generator system in accordance with one embodiment of the present invention. Figures 8-8-8 show the relationship between phase P1 and phase P2 in three examples in accordance with one embodiment of the present invention. Figure 9 is a block diagram of an auto-tuning R F generator system in accordance with one embodiment of the present invention. Figure 10 is a flow diagram of the method operation of an auto-tuning RF generator system in accordance with one embodiment of the present invention. Figure 11 is a diagram of a megahertz ultrasonic module in accordance with one embodiment of the present invention. Figure 12 is a diagram of the energy distribution across the transducer in accordance with one embodiment of the present invention. Description of the components: 1 0 ~ Substrate cleaning system 1 slot 12 ~ substrate carrier 14 ~ substrate 1 5 ~ emission energy 1 6 ~ washing liquid 1 7 ~ reflection energy 18A, 18B, 18C ~ converter 19A, 19B ~ positioning fixture

1292985 圖式簡單說明 24、24A〜基板 3 0〜概要圖 32〜電壓控制振盪器(VCO) 3 3、3 5〜信號 34〜RF產生器 3 6〜功率感測器 38〜反射信號 100〜能量分佈圖 1 0 2、1 0 4、1 2 0、1 2 2 〜曲線 2 0 0〜百萬赫茲超音波清洗系統 2 0 2〜基板 2 0 4〜洗條液 2 0 6〜清洗容室 208A、208B、2 08C〜邊緣滾輪 209A 、 209B〜方向 2 1 0〜轉換器 212〜RF產生器 2 1 4〜發射能量 2 1 6〜反射能量 2 1 8〜活化表面 220〜RF信號 222〜反射信號 2 5 0〜方法操作 255 ^ 260 > 270 〜操作1292985 Schematic description of the 24, 24A ~ substrate 3 0 ~ summary Figure 32 ~ voltage controlled oscillator (VCO) 3 3, 3 5 ~ signal 34 ~ RF generator 3 6 ~ power sensor 38 ~ reflected signal 100 ~ energy Distribution map 1 0 2, 1 0 4, 1 2 0, 1 2 2 ~ curve 2 0 0 ~ million Hertz ultrasonic cleaning system 2 0 2 ~ substrate 2 0 4 ~ washing liquid 2 0 6 ~ cleaning chamber 208A 208B, 2 08C~edge roller 209A, 209B~direction 2 1 0~converter 212~RF generator 2 1 4~transmit energy 2 1 6~reflected energy 2 1 8~activated surface 220~RF signal 222~reflected signal 2 5 0~ method operation 255 ^ 260 > 270 ~ operation

1292985 圖式簡單說明 300〜自動調諧RF產生器系統 302〜RF產生器 30 6〜電壓控制振盪器(VCO) 310〜RF信號 31 2〜DC電源供應部 314〜電感器 3 2 0〜放大器 322〜DC偏壓導軌 324〜接地電位導軌 3 2 6〜偵測器 3 3 0〜E類負載網路 332〜轉換器 340〜比較器裝置 3 4 2〜分壓器網路 40 0〜方法操作 40 5、410、415、420 〜操作 5 0 2、5 0 4〜電容器 5 0 6〜二極體 5 5 0〜波形圖 552、554、556〜電壓波形 600〜RF產生器系統 602〜RF產生器 6 0 4〜相位偵測器 606〜第一^輸入1292985 Schematic description 300~Auto-tuning RF generator system 302~RF generator 30 6~Voltage controlled oscillator (VCO) 310~RF signal 31 2~DC power supply part 314~Inductor 3 2 0~Amplifier 322~ DC bias rail 324 ~ ground potential rail 3 2 6 ~ detector 3 3 0 ~ E load network 332 ~ converter 340 ~ comparator device 3 4 2 ~ voltage divider network 40 0 ~ method operation 40 5 , 410, 415, 420 ~ operation 5 0 2, 5 0 4 ~ capacitor 5 0 6 ~ diode 5 5 0 ~ waveform diagram 552, 554, 556 ~ voltage waveform 600 ~ RF generator system 602 ~ RF generator 6 0 4 ~ phase detector 606 ~ first ^ input

1292985 圖式簡單說明 608〜第二輸入 610、612〜計量電路 6 2 0〜控制放大器 705、710、715、720、730 〜操作 900〜自動調諧RF產生器系統 9 0 2〜可變DC電源供應部 9 0 4〜比較器 9 0 6〜計量電路 I 0 0 5、1 0 1 0、1 0 1 5、1 0 3 0 〜操作 II 0 0〜百萬赫茲超音波模組 1102〜基板處理槽 1104〜密封蓋 11 0 6〜槽百萬赫茲超音波轉換器 II 0 8〜密封蓋百萬赫茲超音波轉換器 III 0〜基板 111 2〜驅動輪 1114〜穩定臂/輪 111 6〜驅動馬達 111 8〜機械連接器 11 2 0〜驅動裝置 11 2 2〜定位桿 ' 1 2 0 0〜能量分佈圖 1202〜能窗 1 2 1 0、1 2 1 2〜曲線1292985 Schematic description 608 ~ second input 610, 612 ~ metering circuit 6 2 0 ~ control amplifier 705, 710, 715, 720, 730 ~ operation 900 ~ auto-tuning RF generator system 9 0 2 ~ variable DC power supply Portion 9 0 4 to comparator 9 0 6 to metering circuit I 0 0 5, 1 0 1 0, 1 0 1 5, 1 0 3 0 ~ operation II 0 0 to megahertz ultrasonic module 1102 to substrate processing tank 1104~ Sealing cover 11 0 6 ~ slot million Hertz ultrasonic converter II 0 8~ Sealing cover million Hertz ultrasonic converter III 0~ substrate 111 2~ drive wheel 1114~stabilizing arm/wheel 111 6~ drive motor 111 8~mechanical connector 11 2 0~drive unit 11 2 2~positioning rod '1 2 0 0~ energy distribution diagram 1202~ energy window 1 2 1 0, 1 2 1 2~ curve

Claims (1)

六、申請專利範圍 1. 方法, 從 測 測 信號之 器輸入 朝向該 率; 當 信號; 將 入° 2. 轉換器 加至該 制信號 3. 轉換器 該第二 如 降低該 如 增加該 %年斗β 一種動態調整RF產生器至轉換器之 包含以下步驟: ^間,、振頰率之 一振盪器、將一 RF輪入信號輸 量該RF輸人信號之一輸人電壓之」為; 量自該RF產生器輪出並連接至 =., 一電壓之一第二相位,其中,丄褥換為輸入之該RF ,且其中該轉換器係被配向^聊信號至該轉換 基板放射一聲能,豆中敕—基板俾使該轉換器 ^ 以耳靶具有該RF信號之頻 該第一相位不等於該第二相 以及 日可,產生一頻率控制 該頻率控制信號施加 豕振邊器之一頻率控制輪 如申請專利範圍第丨項 之瞬間共振頻率之方法^迹之動態調整RF產生器至 振盪器之該頻率控制軒其中將該頻率控制信號施 與一設定點控制信號=入之步驟包括結合該頻率控 如申請專利範圍第丨 之瞬間共振頻率之方、、尸坏建之動態調整RF產生器至 :位時’產生該頻率中當該第-相位不等於 f該第-相位落後該“制:5號之步驟包括: 振盪器之頻率; —相仇,則該頻率控制信號 =第-相位領先 振盪器之頻率;以及一相伋,則該頻率控制信號Sixth, the scope of application for patent 1. Method, from the input of the signal to the rate; when the signal; will be into the ° 2. The converter is added to the signal 3. The converter is the second if the increase is increased by the % Buck β is a dynamic adjustment of the RF generator to the converter comprising the following steps: ^, the vibration rate of one of the oscillators, and an RF round-in signal output of the RF input signal of one of the input voltages; The quantity is rotated from the RF generator and connected to =., a second phase of a voltage, wherein 丄褥 is replaced by the input RF, and wherein the converter is aligned to the conversion substrate to emit a Sound energy, the middle of the bean-substrate, the converter, the frequency of the RF signal, the first phase is not equal to the second phase, and the frequency is generated A frequency control wheel, such as the method of applying the instantaneous resonance frequency of the scope of the patent, the dynamic adjustment of the RF generator to the frequency of the oscillator, wherein the frequency control signal is applied to a set point control signal = step Including the combination of the frequency control, such as the instantaneous resonant frequency of the patent application scope, and the dynamic adjustment of the RF generator to the position: when the frequency is generated, when the first phase is not equal to f, the first phase is behind The "system: step 5 includes: the frequency of the oscillator; - the revenge, then the frequency control signal = the frequency of the first phase leading oscillator; and a phase, the frequency control signal 第45頁 1292985 修正 曰 >1 1~— -----案號 9213$^ 六、申請專利範圍 =果該第一相位係等於該第二相位,則該頻 虎不改變該振盪器之頻率。 、丰t制信 棘拖^如/請專利範圍第1項所述之動態調整^產+ ^之瞬間共振頻率之方法,"測量該第_ =:至 弟一相位,且在該|個冃& 仇與該 -信號。 Μ輪入^虎之母彳口周期產生該頻率控制 ” 5· 一種轉換器RF源,包含·· 振盈态,具有一頻率控制輸入與一 RF信號輪出; 一^一RF產生器,具有連接至該振盪器之該RF信號輸出之 =以t連接至該轉換器之〆RF產生器輸出,其中將自 2 ,生1^輸出之一信號施加至該轉換器輸入,且其中該 处為係被配向至一基板俾使該轉換器朝向該基板放射一 月匕’其^该聲能具有該RF信號之頻率;與 第一 相位 相# :電壓相位偵測器,該電壓相位偵測器包含: 輪入,=姑連接至該振盪器之該RF信號輸出;一第 ^射t ¥無,该RF產生器輸出,其中該第二相位輸入將一 該至該電Μ相位總,該反射信號相當於自 信於ΐ Γ 射進入該轉換器的能量,·以及一頻率控制 JU ^ ’連接至該振盪器頻率控制輪入。 頻率於制15 項所述之轉換_源’其" 頻率^制輸ί 經由一控制放大器而連接至該振盪器 ^冰如申明專利範圍第6項所述之轉換器RF源,其中該 控制放大器包含: 評伊Page 45 1292985 Amendment 曰 >1 1~— ----- Case No. 9213$^ VI. Application Patent Range = If the first phase is equal to the second phase, then the frequency tiger does not change the oscillator. frequency. , Feng t 信 棘 ^ ^ ^ / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / /冃 & hatred with the - signal. ΜInto the wheel of the mother of the tiger to generate the frequency control" 5 · A converter RF source, including · vibration state, with a frequency control input and an RF signal wheel; The RF signal output connected to the oscillator is connected to the RF generator output of the converter at t, wherein a signal from the 2 output is applied to the converter input, and where Aligned to a substrate, the transducer is radiated toward the substrate for one month, and the acoustic energy has a frequency of the RF signal; and the first phase phase #: voltage phase detector, the voltage phase detector The method includes: wheeling, = the RF signal output connected to the oscillator; a first shot t ¥ none, the RF generator output, wherein the second phase input will be a total to the electrical phase, the reflection The signal is equivalent to the energy of the 进入 射 injection into the converter, and a frequency control JU ^ 'connected to the oscillator frequency control wheel. Frequency is converted in the 15th item _ source 'its' frequency System ί is connected to the oscillator via a control amplifier ^ Ice is stated as patentable scope of item 6 of the RF source converter, wherein the control amplifier comprising: Iraq Comment 12929851292985 第47頁 1292985Page 47 1292985 修正 U * 一種基板之清洗方法,包含以下步驟: ^ ^以一頻率f將一RF信號施加至一轉換器,該轉換器係被 u 土板’以使該轉換器以該頻率f向該基板放射一辣 /、中邊基板及该轉換器係浸沒於一清洗溶液中; 相^於該轉換器移動該基板;及 動態調整該RF信號以維持該基板與該轉換器間之兮 月匕之一共振。 Μ # 盆11.如申請專利範圍第丨0項所述之基板之清洗方法, 中動怨調整該RF信號以維持該聲能之該共振之該步驟勺A method of cleaning a substrate comprising the following steps: ^^ applying an RF signal to a converter at a frequency f, the converter being U-shaped so that the converter is at the frequency f toward the substrate Radiating a spicy/middle substrate and the converter are immersed in a cleaning solution; moving the substrate with the converter; and dynamically adjusting the RF signal to maintain a period between the substrate and the converter A resonance. Μ# Basin 11. The cleaning method of the substrate as described in claim 丨0, the step of adjusting the RF signal to maintain the resonance of the acoustic energy 括維持施加至該轉換器之該RF信號之一固定電壓。 匕 12.如申請專利範圍第1 〇項所述之基板之清洗方法, 中 Μ產生杰將该RF信號施加i該轉換為’而維持施力 至η亥轉換器之该r ρ信號之一固 電廢之该步驟包含以 驟: ^步 測$ .rf信號之一第一電壓; 比較該第一電壓與一期望設定點電壓;以及 將一控制信號輸入至一可變DC電源供應部,俾能調敎 該可變DC電源供應部之一輪出電壓,該可變DC電源供應^ 提供DC功率給該rf產生器。 "A fixed voltage is maintained that maintains one of the RF signals applied to the converter.匕12. The cleaning method of the substrate according to the first aspect of the patent application, the Μ Μ 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰 杰The step of electrically dissipating comprises: stepping: one of the first voltages of the $.rf signal; comparing the first voltage with a desired set point voltage; and inputting a control signal to a variable DC power supply unit, A turn-off voltage of one of the variable DC power supply units can be adjusted, the variable DC power supply providing DC power to the rf generator. " 13.如申請專利範圍第丨〇項所述之基板之清洗方法, 其中動態調整該RF信號以維持該聲能之該共振之該步褲包 括動態調整施加至該轉換器之該RF信號之一頻率f。 ^ 14·如申請專利範圍第丨3項所述之基板=清洗方法, 其中該RF信號係由一RF產生器所施加’且動態調整施知13. The method of cleaning a substrate according to claim 2, wherein the step of dynamically adjusting the RF signal to maintain the resonance of the acoustic energy comprises dynamically adjusting one of the RF signals applied to the converter. Frequency f. The substrate=cleaning method as described in claim 3, wherein the RF signal is applied by an RF generator and dynamically adjusted 第48頁 1292985 __案號 92137672 六、申請專利範圍 a 修正Page 48 1292985 __Case No. 92137672 VI. Scope of Patent Application a Amendment 該轉換器之該RF信號之該頻率f之該步驟包含: 測量施加至該RF產生器之一電源電壓; 測量橫越過包含在該R F產生器中之一輸出放大哭夕 峰值電壓; DD < 當該峰值電壓不等於該電源電壓之一選擇比率時,產 -生一頻率控制信號;以及 將該頻率控制信號施加至產生該RF信號之一振盡哭 一頻率控制輸入。 1 5 ·如申請專利範圍第丨3項所述之基板之清洗方法, 其中該RF信號係由一 RF產生器所施加,且動態調整施加 該轉換之該RF信號之該頻率f之該步驟包含以下步驟至 從一振盪器將一 RF輪入信號輸入至該RF產生器,拍 大該RF產生器中之該RF信號; 、’ 測量該RF輸入信號之一輸入電壓之一第一相位; 測量來自該RF產生器之該RF信號輸出之一電壓# 二相位; 弟 田該第相位不等於該第二相位時,產生一頻率扒 ;以及 、卞k制 將该頻率控制信號施加至該振盪器之一頻率控制輪 ,一種清洗系統,包含: 清洗容室,包含一轉換器與一基板,該轉換器係被 °亥基板’一可變距離d使該轉換器與該基板分離; 動態可調整RF產生器,具有連接至該轉換器之—輪The step of the frequency f of the RF signal of the converter comprises: measuring a supply voltage applied to the RF generator; measuring the output across the output of the RF generator to amplify the peak value of the crying peak; DD < When the peak voltage is not equal to a selection ratio of the power supply voltage, a frequency control signal is generated; and the frequency control signal is applied to generate one of the RF signals to vibrate a frequency control input. The method of cleaning a substrate according to claim 3, wherein the RF signal is applied by an RF generator, and the step of dynamically adjusting the frequency f of the RF signal to which the conversion is applied includes The following steps: input an RF wheeling signal from an oscillator to the RF generator, and shoot the RF signal in the RF generator; and 'measure the first phase of one of the input voltages of the RF input signal; The RF signal from the RF generator outputs a voltage #2 phase; when the phase is not equal to the second phase, a frequency 扒 is generated; and the frequency control signal is applied to the oscillator A frequency control wheel, a cleaning system, comprising: a cleaning chamber comprising a converter and a substrate, the converter being separated from the substrate by a variable distance d; dynamically adjustable RF generator with a wheel connected to the converter 1292985 ,、:自為Μ產生器輸出之/信號施加至該轉換哭 器朝向該基板…聲能,·中該ϊ心有 ^產生态所輪出之該信號的頻率;以及 >反饋電路,連接至該可調整RF產生器之一控制輸入 =調整該可調整RF產生器的一輸出而維持該轉換器外部 之該聲能的一共振; 其中該動態可調整RF產生器包含: 一可變DC電源供應部,具有〆控制輪入以及連接至該 RF產生器之一DC輪出;而1292985,: the signal output from the generator output is applied to the conversion crying device toward the substrate... the acoustic energy, the center of the signal has the frequency of the signal that is generated by the state; and the feedback circuit, a control input coupled to the adjustable RF generator = adjusting an output of the adjustable RF generator to maintain a resonance of the acoustic energy external to the converter; wherein the dynamically adjustable RF generator comprises: a variable a DC power supply unit having a 〆 control wheel and a DC turn connected to the RF generator; 該反饋電路包含: 一第一比較器,包含: 一第一輪入,連接至一設定點控制信號; 一第二輸入,連接至該打產生器之RF輸出;以及 一控制信號輪出,連接至該可調整RF產生器之該 控制輸入,該控制輪入包含在該玎變DC電源供應部上之一 電壓控制輸入。The feedback circuit comprises: a first comparator comprising: a first wheel input connected to a set point control signal; a second input connected to the RF output of the generator; and a control signal wheeled, connected To the control input of the adjustable RF generator, the control wheel enters a voltage control input included in the sinusoidal DC power supply. 17·如申請專利範圍第1 6項所述之清洗系統,其中該 基板可被旋轉,且其中當該基板被旋轉時,該距離^改變了 來自該RF產生器之一 信號輸出之大約1/2波長。 18.如申請專利範圍第1 6項所述之清洗系統,其中·· 該動態可調整RF產生器包含: 一振盪器,具有一控制信號輸入與一RF信號輪出; 一輸出放大器,連接至該振盪器輸出;以及 一負載網路’連接在該輸出放大器之一輸出與該RF產17. The cleaning system of claim 16, wherein the substrate is rotatable, and wherein the distance ^ changes about one-half of a signal output from the RF generator when the substrate is rotated 2 wavelengths. 18. The cleaning system of claim 16, wherein the dynamically adjustable RF generator comprises: an oscillator having a control signal input and an RF signal rotation; an output amplifier coupled to The oscillator output; and a load network 'connected to one of the output amplifiers and the RF output 第50頁 1292985Page 50 1292985 生器之該輪出之間;而 5亥反饋電路,包含: 其連接橫越過該輪出放大器; 以 一峰值電壓偵測器, 及 一第二比較器,包含: 一 ^三輸入,連接至該可變DC電源供應部之一輪出· 一第四輸入,連接至該峰值電壓偵測器之一輸出丨以 弟一比較器輸出,連接至該可調整RF產生器之該於 1輸入,該控制輸入包含該振盪器控制信號輸入。。工 19·如申請專利範圍第16項所述之清洗系統,其中: 該動態可調整RF產生器包含: ’、· 振盪器,具有一頻率控制輸入與一RF信號輸出;以 而 一RF產生器輪入,連接至該振盪器RF信號輸出 5亥反饋電路包含: 一電壓相位偵測器,包含·· 一第一相位輪入,連接至該振盪器之該RF信號輸出· 一第二相位輪入,連接至該RF產生器輪出;以及 ’ 一頻率控制信號輸出,連接至該可調整RF產生器之节 控制輸入,該控制輸入包含該振盪器頻率控制電壓輪入 2 0. —種清洗系統,其包含·· 一清洗谷室,包含一轉換器與一基板,該轉換器係被 配向至該基板,一可變距離d使該轉換器與該基板分離;The 5 Hz feedback circuit includes: its connection across the wheel-out amplifier; a peak voltage detector, and a second comparator, including: one ^ three inputs, connected to One of the variable DC power supply units has a fourth input connected to the output of one of the peak voltage detectors, and the output of the comparator is connected to the input of the adjustable RF generator. The control input contains the oscillator control signal input. . The cleaning system of claim 16, wherein: the dynamically adjustable RF generator comprises: ', · an oscillator having a frequency control input and an RF signal output; and an RF generator Wheeling, connected to the oscillator RF signal output 5H feedback circuit comprises: a voltage phase detector comprising: · a first phase wheel, the RF signal output connected to the oscillator · a second phase wheel Connected to the RF generator wheel; and 'a frequency control signal output coupled to the adjustable control input of the adjustable RF generator, the control input including the oscillator frequency control voltage wheeled 20. a system comprising: a cleaning valley chamber comprising a converter and a substrate, the converter being aligned to the substrate, a variable distance d separating the converter from the substrate; 1292985 _案號92137672_年月曰 修正_ 六、申請專利範圍 一動態可調整RF產生器,具有連接至該轉換器之一輸 出其中將自該RF產生器輸出之一信號施加至該轉換器,且 其中該轉換器朝向該基板放射一聲能,其中該聲能具有自 該RF產生器所輸出之該信號的頻率;以及 一反饋電路,連接至該可調整RF產生器之一控制輸入 -俾以調整該可調整RF產生器的一輸出而維持該轉換器外部 之該聲能的一共振,其中: — 該動態可調整RF產生器包含: 一供應電壓源;1292985 _ Case No. 92137672 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ And wherein the converter emits an acoustic energy toward the substrate, wherein the acoustic energy has a frequency of the signal output from the RF generator; and a feedback circuit coupled to the control input of the adjustable RF generator - Maintaining a resonance of the acoustic energy external to the converter by adjusting an output of the adjustable RF generator, wherein: - the dynamically adjustable RF generator comprises: a supply voltage source; 一振盪器,具有一控制信號輸入與一RF信號輸 出; 一輸出放大器,連接至該振盪器輸出; 一負載網路,連接在該輸出放大器之一輸出與該 RF產生器之該輸出之間;而 該反饋電路包含: 一峰值電壓偵測器,連接横越過該輸出放大器; 以及 一比較器電路,包含:An oscillator having a control signal input and an RF signal output; an output amplifier coupled to the oscillator output; a load network coupled between the output of one of the output amplifiers and the output of the RF generator; The feedback circuit includes: a peak voltage detector connected across the output amplifier; and a comparator circuit comprising: 一第一輸入,連接至該供應電壓源; 一第二輸入,連接至該峰值電壓偵測器之一 輸出;以及 * 一比較器輸出,連接至該可調整RF產生器之 該控制輸入,該控制輸入包含該振盪器控制信號輸入。 21. —種清洗系統,其包含:a first input coupled to the supply voltage source; a second input coupled to the output of the peak voltage detector; and a comparator output coupled to the control input of the adjustable RF generator, The control input contains the oscillator control signal input. 21. A cleaning system comprising: 第52頁 1292985 案號 92137R79 六、申請專利範圍 清洗容 配向至該基板 一動態可 出,其中將自 且其中該轉換 自該RF產生器 一反饋電 俾以調整該可 之該聲能的一 該動態可 室,包含一轉換器與一基板,該轉換器係被 j —可變距離d使該轉換器與該基板分離; j王RF產生态,具有連接至該轉換器之一輸 f耵產生器輸出之一信號施加至該轉換器, U向該基板放射一聲能,其*該聲能具有 所輸出之該信號的頻率;以及 路,連接至該可調整RF產生器之一 :fF產生器的-輸出而維持該轉換; 共振,其中·· , 振盪态’具有-頻率控制輸入與-RF信號輸 產生态輸入’連接至該振盪器RF信號輸出; 該反饋電路包含: 一,壓相位偵測器,包含: …相位輸入,連接至該振盪器之該RF信號輸 調整RF產生器包含 出 一 f 7相位輸入,•接至該RF產生器輸出 夕…: 制信號輪出,連接至該可調整二產:i 入。 制輸入包含該振盪器頻率控制電壓輸 2 2· 一種動態調考:&丄抑 u 之方法,包含以下步驟:益至轉換器之瞬間共振頻率 1292985 --jjt ,921376^__车_^日 修正 六、申請專繼IS ^ _ " - 從一振盪器提供一RF輪入信號給該rf產生器之_輸 入,其中將自該RF產生器輪出之一信號施加至一轉換器輸 入,其中該轉換器係配向至一基板俾使該轉換器朝向該基 板放射一聲能,其中該聲能具有自該RF產生器所輸出之玆 信號的頻率; A ' 測量施加至該產生器之一電源電壓; — 測量該RF產生器中之一峰值電壓; s忒峰值電壓不等於該電源電壓之一選擇比率時,產 生一頻率控制信號;以及 將該頻率控制信號施加至該振盪器之一頻率控制輪 入0 23·如申請專利範圍第22項所述之動態調整RF產生哭 至轉換器之瞬間共振頻率之方法,其中測量該峰值電壓: ^亥步驟包括測量橫越過包含在該RF產生器中之一輪出放大 器之該峰值電壓。 24·如申請專利範圍第22項所述之動態調整RF產生器 至轉換器之瞬間共振頻率之方法,其中該峰值電壓與該電 源電壓之该選擇比率係等於大約3比1以及大約6比1之間的 一範圍。 25· —種rf產生器,包含: 一供應電壓源; 一振盪器,具有一控制信號輸入與一RF信號輸出; 一輸出放大器,具有連接至該振盪器輸出的一輸入; 一負載網路,連接在該輸出放大器之一輸出與該RF產Page 52 1292985 Case No. 92137R79 VI. The patent application scope cleansing the distribution to the substrate, a dynamic output, wherein the conversion from the RF generator to the feedback device to adjust the acoustic energy can be adjusted. a dynamic chamber comprising a converter and a substrate, the converter being separated from the substrate by a variable distance d; the J-RF generating state having a connection to the converter One of the output of the device is applied to the converter, U emits an acoustic energy to the substrate, the sound energy has a frequency of the signal outputted, and a path connected to one of the adjustable RF generators: fF generation The output of the device maintains the conversion; the resonance, where ···, the oscillating state 'having a -frequency control input and the -RF signal input state input' is connected to the oscillator RF signal output; the feedback circuit comprises: The detector includes: ... a phase input, the RF signal input to the oscillator, the RF generator includes an f 7 phase input, and is connected to the RF generator output...: signal rounding, even Connect to the adjustable second production: i into. The input contains the oscillator frequency control voltage input 2 2 · A dynamic tuning: & suppress the u method, including the following steps: benefit to the converter's instantaneous resonant frequency 1292985 --jjt, 921376^__ car _^ Day Correction VI. Application Specialization IS ^ _ " - Provide an RF round-in signal from an oscillator to the input of the rf generator, wherein one of the signals from the RF generator is applied to a converter input Wherein the converter is aligned to a substrate such that the transducer emits an acoustic energy toward the substrate, wherein the acoustic energy has a frequency of a z-signal output from the RF generator; A' measurement is applied to the generator a power supply voltage; - measuring a peak voltage of the RF generator; s 忒 peak voltage is not equal to a selection ratio of the power supply voltage, generating a frequency control signal; and applying the frequency control signal to the oscillator Frequency control wheeling 0 23 · The method of dynamically adjusting RF as described in claim 22 of the patent application to generate a momentary resonance frequency of crying to the converter, wherein the peak voltage is measured: Through an RF generator contained in the vessel that the peak voltage of the amplifier. 24. The method of dynamically adjusting an instantaneous resonant frequency of an RF generator to a converter as recited in claim 22, wherein the selected ratio of the peak voltage to the supply voltage is equal to about 3 to 1 and about 6 to 1 A range between. An rf generator comprising: a supply voltage source; an oscillator having a control signal input and an RF signal output; an output amplifier having an input coupled to the oscillator output; a load network, Connected to one of the output amplifiers and the RF output 第54頁 I292985 Ί_1^92137672 年月 日―佟 π 、、申請專 ---—~· 施< 一輸出之間,其中將自該RF產生器所輸出的一信號 ^加至一轉換器輸入,其中該轉換器係配向至一基板俾^ ^轉,器朝向該基板放射一聲能,其中該聲能具有自該” 生器所輪出之該信號的頻率; 一峰值電壓偵測器,連接橫越過於該輪出放大器之該 -輪出與一參考電壓導軌之間;以及 Α < ” 一比較器電路,該包含:一第一輸入,連接至該供應 電壓源;一第二輸入,連接至該峰值電壓偵測器之一輪 出;與一比較器輸出,連接至該振盪器控制信號輸入。Page 54 I292985 Ί_1^92137672 Year of the month - 佟 π,, application for special----~· Application < An output between which a signal output from the RF generator is added to a converter input The converter is aligned to a substrate, and the device emits an acoustic energy toward the substrate, wherein the acoustic energy has a frequency of the signal that is rotated from the "device"; a peak voltage detector, The connection crosses between the wheel of the wheeled amplifier and a reference voltage rail; and Α < ” a comparator circuit comprising: a first input coupled to the supply voltage source; a second input Connected to one of the peak voltage detectors; and a comparator output connected to the oscillator control signal input. 26.如申請專利範圍第25項所述之RF產生器,其中當 一電源電壓不等於由該峰值電壓偵測器輸出之一峰值電^ 之一選擇比率時,一控制信號係從該比較器輸出被輪出= 27· —種RF產生器,包含: 一供應電壓源; 一電壓控制振盪器(VCO),具有一控制電壓輪入與一輸 出; /、 一輸出放大器,連接至該VCO輸出; 一Ε類負載網路,連接在該輸出放大器之一輸出與該以 產生器之一輸出之間;26. The RF generator of claim 25, wherein a control signal is from the comparator when a supply voltage is not equal to a peak ratio selected by the peak voltage detector output. The output is rotated = 27 · an RF generator comprising: a supply voltage source; a voltage controlled oscillator (VCO) having a control voltage wheel and an output; /, an output amplifier connected to the VCO output a load network connected between one of the outputs of the output amplifier and one of the outputs of the generator; - 一峰值電壓偵測器,連接橫越過該輸出放大器;及 一比較器電路,該比較器電路包含··一第一輸入,連 ,至該供應電壓源;一第二輪入,連接至該峰值電壓偵測 态之一輸出;一比較器輸出,連接至該vco控制電壓輸入, 當一電源電壓不等於由該峰值電壓偵測器輸出之—峰值電a peak voltage detector connected across the output amplifier; and a comparator circuit comprising: a first input connected to the supply voltage source; a second turn in, connected to the One output of the peak voltage detection state; a comparator output connected to the vco control voltage input, when a power supply voltage is not equal to the peak current output by the peak voltage detector 第55頁 1292985Page 55 1292985 -----畫號92137672__年月 六、申請專利範圍 壓之大約3 · 6比1之比率時 被輸出;與 控制電壓係從該比較器輪出 一轉換器,連接至該RF產生器輪出,其中將自該”產 t所輪出之一信號施加至一轉換器輸入,其中該轉換器 中二,=至一基板俾使該轉換器朝向該基板放射聲能,其 该聲能具有自該RF產生器所輸出之該信號的頻率。 28 · 一種維持固定輸入電壓給轉換器之方法,包含以 下步驟: 從一叮產生器施加一 RF信號至該轉換器,其中將自該 RF產生器所輪出之一信號施加至一轉換器輸入,其中該轉 $為係被配向至一基板俾使該轉換器朝向該基板放射聲 犯’其中該聲能具有自該RF產生器所輸出之該信號的頻 率; 測量該RF信號之一第一電壓; 比較該第一電壓與一期望設定點電壓;以及 將一控制信號輸入至一可變D C電源供應部,俾能調整 "亥可變如電源供應部之一輸出電壓,該可變DC電源供應部 提供該DC功率給該RF產生器。 2 9 ·如申請專利範圍第2 8項所述之維持固定輸入電壓 給轉換器之方法,其中該第一電壓係為該轉換器之一阻抗 之一函數,且其中該轉換器之該阻抗隨著該轉換器與一目 標之間的一距離變化而改變。 3 0 ·如申請專利範圍第2 8項所述之維持固定輸入電壓給 轉換器之方法,其中比較該第一電壓與該期望設定點電壓----- Picture number 92137672__, the application of the patent range pressure is about 3 · 6 to 1 ratio is output; and the control voltage is from the comparator to a converter, connected to the RF generator Turning out, wherein one of the signals from the "turned t" is applied to a converter input, wherein the second, = to a substrate of the converter causes the transducer to emit acoustic energy toward the substrate, the acoustic energy There is a frequency of the signal output from the RF generator. 28 - A method of maintaining a fixed input voltage to a converter, comprising the steps of: applying an RF signal from a generator to the converter, wherein the RF A signal that is rotated by the generator is applied to a converter input, wherein the turn is aligned to a substrate, causing the converter to emit a sound toward the substrate, wherein the sound energy has output from the RF generator The frequency of the signal; measuring a first voltage of the RF signal; comparing the first voltage with a desired set point voltage; and inputting a control signal to a variable DC power supply unit, which can be adjusted Change like One of the source supply portions outputs a voltage, and the variable DC power supply unit supplies the DC power to the RF generator. [9] A method of maintaining a fixed input voltage to a converter as described in claim 28, wherein The first voltage is a function of one of the impedances of the converter, and wherein the impedance of the converter changes as a distance between the converter and a target changes. 3 0 · as claimed in claim 2 The method of maintaining a fixed input voltage to a converter according to item 8, wherein comparing the first voltage with the desired set point voltage 1292985 案號 92137672 曰 修正 六、申請專利範圍 之該步驟包括決定一控制信號,且其中該控制信號係大約 等於該第一電壓與該期望設定點電壓之間的一差異。 、 31 . —種轉換器RF源,包含: ' 一RF產生器,具有連接至該轉換器之一輸入之一R{?輪 出,其中將自該RF產生器所輪出之一 RF信號施加至一轉^ -器輸入,其中该轉換器係被配向至一基板俾使該轉換器朝 ,向該基板放射聲能,其中該聲能具有自該”產生器所輸出 之該RF信號的頻率; ^ 一可變DC電源供應部,具有一控制輸入與連接至該心 產生器之一 DC輸出; 一比較器,該比較哭白人· 唾 .. 平乂 w包含•一弟一輸入,連接至一設 定點控制信號;一第二輪入、击拉芯 币 顆』入’連接至該RF產生器rf輪中; 以及一控制信號輸出,連接 王的〇輪出 電壓控制輸人。 連接至該可㈣電源供應部上之- 32. —種轉換器RF源,包含: 一E類RF產生器,且右、*杜 室中之該百 Γ立、有連接至一百萬赫兹超音波清洗容 主丁 <為白禹赫茲超音波 巧 中將自該RF產生哭所輪出^換广之一輸入之一RF輸出,其 入,A中彳_ ί 〇 之一RF信號施加至一轉換器輸 八,具宁該轉換器係被配 付状的▼刖 基板放射聲能,苴中該聲二二基板俾使該轉換器朝向該 RF信號的頻率/、 β卓此具有自該評產生器所輸出之該 具有一控制輸入與連接至該RF :可變DC電源供應部 產生1§之—DC輸出; 比車父裔,該比較器包含: 第一輸入,連接至一設1292985 Case No. 92137672 修正 Amendment 6. This step of applying for a patent includes determining a control signal, and wherein the control signal is approximately equal to a difference between the first voltage and the desired set point voltage. 31. A converter RF source comprising: 'an RF generator having one of the inputs to one of the converters R{? wheel out, wherein one of the RF signals from which the RF generator is rotated is applied a converter input, wherein the converter is aligned to a substrate, the converter is directed toward, radiating acoustic energy to the substrate, wherein the acoustic energy has a frequency of the RF signal output from the "generator" ^ A variable DC power supply unit having a control input and a DC output connected to the heart generator; a comparator that compares to crying whites and saliva.. Ping Wei w contains • one brother one input, connected to a set point control signal; a second wheel-in, pull-down coin "in" is connected to the RF generator rf wheel; and a control signal output is connected to the king's turn-off voltage control input. (4) Power supply on the power supply - 32. A converter RF source, comprising: an E-type RF generator, and the right, * Duo room in the hundreds of stands, connected to a million Hz ultrasonic cleaning capacity Master Ding, for the white 禹 Hertz Ultrasonic, will cry from the RF One of the RF inputs of one of the inputs is turned on, and one of the RF signals of one of A _ ί A is applied to a converter, and that the converter emits sound energy of the 刖 substrate. , the sound of the second substrate, the frequency of the converter toward the RF signal /, β has the control output from the evaluation generator having a control input and connected to the RF: variable DC power supply Generate 1 § - DC output; than the car father, the comparator contains: the first input, connected to a set 第57頁 1292985Page 57 1292985 第58頁Page 58
TW092137672A 2003-02-06 2003-12-31 System and method of dynamically adjusting a rf generator to an instantaneous resonant frequency of a transducer,a transducer rf source and an rf generator TWI292985B (en)

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US10/360,322 US6995067B2 (en) 2003-02-06 2003-02-06 Megasonic cleaning efficiency using auto-tuning of an RF generator at constant maximum efficiency
US10/360,316 US6998349B2 (en) 2003-02-06 2003-02-06 System, method and apparatus for automatic control of an RF generator for maximum efficiency
US10/360,320 US7033845B2 (en) 2003-02-06 2003-02-06 Phase control of megasonic RF generator for optimum operation
US10/359,765 US7053000B2 (en) 2003-02-06 2003-02-06 System, method and apparatus for constant voltage control of RF generator for optimum operation

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