TW200421433A - Substrate processing equipment - Google Patents

Abstract

The purpose of the invented substrate processing apparatus is to have the capability of depositing a film stably and efficiently on a substrate. The substrate processing apparatus is equipped with a holding member, which supports a substrate at a position so as to make it confront a heater unit, and a rotation drive unit, which rotates the holding member that holds the substrate. A processing vessel is equipped with a gas spray nozzle, which is provided on one side of the processing space, and a rectangular exhaust vent, which is extended in a width direction and is provided on the other side of the processing space. The gas spray nozzle is equipped with plural spray openings, which are arranged in a line in the width direction of the processing space, so as to generate a stable flow of gas inside the processing space for enabling gas from the spray openings to pass over the surface of the substrate in a laminar flow. Thus, a film can be stably and efficiently deposited on the surface of the substrate; and the substrate processing apparatus can be improved in productivity.

Description

200421433 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus that performs a process such as film formation on a substrate. [Previous technology] In today's ultra-high-speed semiconductor devices, with the progress of miniaturization processes, gate lengths below o.l # m have gradually become possible. Generally, with the miniaturization of the semiconductor device's operating speed also increases, but in such a very miniaturized semiconductor device, as the miniaturization shortens the length of the closed electrode, it is necessary to make the film thickness of the gate insulating film Reduced principles. However, once the gate length becomes less than 0.1 / zm, the thickness of the gate insulation film must be set to 2 nm or less, such as when a thermal oxide film is currently used. Increasing the channel current results in the inability to avoid the problem of increased gate leakage current. Because of this situation, 'Since the past, it has been proposed that the thermal conductivity film is more specific than the permittivity system.' Because the actual thickness of the insulating film is large, but the thickness of the Ta film or A1203, Zr is small when converted to a thermal oxide film. 〇2, excitation 2, and other high dielectric f materials such as 204 or HfS104. #From the use of such high-electricity materials, the gate electrode length is less than G, even though it is a very short ultra-high-speed semiconductor device, the physical film thickness of the left and right sides of the coffee can be 1 pole, and the edge film. And can control the leakage current caused by the channel effect. For example, the Ta205 film known by 彺 can be formed by using Ta (〇c ^ and 〇2 as a gas phase raw material. In a typical case, the process is performed under a reduced pressure% ^ 'about 48 ( rc, or at a temperature above this. This shape

OA87 \ 87879.DOC 200421433 into a TaW5 film, which was further heat-treated in an oxygen atmosphere. As a result, the lack of oxygen in the film was lifted off 'and the film itself crystallized. The Ta205 film thus crystallized showed a large specific permittivity. From the viewpoint of improving the carrier current mobility in the channel area, it can be separated between the high-voltage " shell = polar oxide film and the Shi Xi substrate! Below nm, it is preferably a very thin base oxide film under U 2. The base oxide film must be very thin. If it is thick, the effect of using a high dielectric film for the gate insulating film is offset. On the other hand, #This very thin base oxide film must cover the surface of the silicon substrate uniformly, and it must be required not to form defects such as interface levels. From the past, thin gate oxide films are generally formed by rapid thermal oxidation (RTO) treatment of Shixi substrates (for example, refer to Patent Literature 丨), but if you want to form a desired thermal oxide film with a thickness of less than 1 nm , It is necessary to reduce the processing temperature during film formation. However, a thermal oxide film formed at such a low temperature is apt to contain defects such as an interface level, and is not suitable as a base oxide film for a high-dielectric gate oxide film. FIG. 1 is a diagram showing a configuration of a semiconductor device 10 that does not include a high-dielectric gate insulating film. 1. In FIG. 1, a semiconductor device 10 is formed on a Shi Xi substrate i 1, and Ta Shi 05, Ai 02, Zr 02 are formed on the Shi Xi substrate 11 via a base oxide film 12.

The high-dielectric gate oxide film 13 such as Hf02, ZrSiCU, HfSi04, and the like, and a gate electrode 14 is formed on the high-dielectric gate oxide film 13 described above. In the semiconductor device 10 of FIG. 1, in the surface portion of the aforementioned base oxide film layer 12, the range of O: \ 87 \ 87879.DOC -8- 200421433 which maintains the flatness of the interface between the silicon substrate 11 and the base oxide film 12 'Doped with nitrogen (N) to form an oxynitride film 12A. Since the oxynitride film 12A having a larger specific permittivity than the silicon oxide film is formed in the base oxide film 12, the thermal oxide film conversion film thickness of the base oxide 12 can be further reduced. As described above, in the high-speed semiconductor device 10, the preferable thickness of the aforementioned base oxide film 12 is as thin as possible. However, in order to form the base oxide film 12 uniformly and stably below 1 nm, for example, 0.8 nm or less, and further corresponding to a thickness of about 0.4 nm of the 2 to 3 atomic layer, it is more difficult than in the past. In addition, in order to realize the function of the high-dielectric gate insulating film 13 formed on the base oxide film 12, the stacked high-dielectric film 13 is crystallized by heat treatment, and oxygen deficiency compensation must be performed, but for the high-dielectric film When such heat treatment is performed, since the film thickness of the base oxide film 12 is increased, the actual film thickness of the gate insulating film is reduced by using the rhenium dielectric gate insulating film 13, which substantially cancels each other out. With the increase in the thickness of the base oxide film 12 thus heat-treated, the inter-diffusion of oxygen atoms and silicon atoms at the interface between the silicon substrate 11 and the base oxide film 12 is implied, and the formation of a silicate transition layer with this Or the possibility of the base oxide film 12 growing due to the intrusion in the oxygen plate. As the thickness of the base oxide film 12 increases due to heat treatment, especially the thickness of the base oxide film 12, when it is used as the base oxide film, it is desired to reduce the film thickness to below the desired number of atomic layers. Will become a very urgent issue. [Patent Document 1] Japanese Patent Application Laid-Open No. 5-47687 [Summary of the Invention] The present invention aims to provide a novel and useful substrate processing O: \ 87 \ 87879.DOC -9- 200421433 device that solves the above-mentioned problems. A more detailed object of the present invention is to provide a substrate processing device capable of stably forming a very thin oxide film with a thickness of typically 2 to 3 atomic layers on the surface of a silicon substrate, and then nitriding it to form oxynitride. Alas. In addition, a more detailed object of the present invention is to provide a cluster substrate processing system including a substrate processing device, which can stably form a very thin oxide film with a thickness of typically 2 to 3 atomic layers on the surface of the Shixi substrate. , And then make it stable nitriding. The purpose of the other problems of the book 1 is to provide a substrate device. The device can solve the above-mentioned problems, and is configured to improve the uniformity of the oxide film, improve the yield, and prevent pollution. To achieve the above object, the present invention has the following features. According to the present invention, the gas ejection unit ejects the gas' from the-side of the processing volume H toward the substrate to be processed held by the holding member, and the exhaust port provided at the processing = other side exhausts the gas passing through the substrate to be processed, In this way, in order to achieve uniformity of the oxide film, improve the yield and prevent pollution, at the same time, it can provide gas at a specific flow rate (laminar flow) from one direction to the surface of the processed substrate held in the processing space. Stabilization is based on the film-forming treatment process, and can be performed efficiently to improve productivity. = 外 | According to the present invention, since the plural a = horizontal arrangement arranged in a row in the horizontal direction allows the airflow in the entire processing space to be kept uniform, the processing of the substrate to be processed can be efficiently performed to increase the production Sex. In addition, according to the present invention, due to the individual supply

O: \ 87 \ 87879.DOC -10- 200421433 A plurality of gas supply lines of two kinds of gases can selectively and stably supply nitriding gas or oxidizing gas, for example, and can be applied to the area near the substrate to be processed in the processing space. , Stable supply of any gas. In addition, according to the present invention, since the exhaust port is formed in a wider rectangular shape than the substrate to be processed, the exhaust efficiency of the gas passing through the substrate to be processed can be improved. Consistently, it is possible to stabilize the film formation process of the substrate to be processed, and it can be performed efficiently to improve productivity. In addition, according to the present invention, since the exhaust port is communicated from the bottom of the other side of the processing container to an exhaust path extending downward, the exhaust efficiency of the lice passing through the substrate to be processed can be improved, and thus The airflow of the entire processing space is kept at a stable level, and the film formation processing of the substrate to be processed can be performed efficiently. [Embodiment] The following drawings explain embodiments of the present invention. Fig. 2 is a front view showing the structure of an embodiment of the substrate processing apparatus of the present invention. Fig. 3 is a side view showing the structure of an embodiment of the substrate processing apparatus of the present invention. FIG. 4 is a cross-sectional view taken along the line 2_8_8 in FIG. As shown in FIG. 2 to FIG. 4, the substrate processing apparatus 20 is structured as described below, and can be configured to only perform ultraviolet light radical oxidation treatment of the substrate of Shi Xi, and use such external light radical oxidation. A radical nitridation treatment of the high-frequency long-distance electropolymerization of the formed oxide film. The main structure of the substrate processing apparatus 2G includes a processing container 22 which is internally divided into a processing space, and is inserted into the processing container 22 by heating at a specific temperature.

O: \ 87 \ 87879DOC 200421433 The heating part 24 of the substrate to be processed (Shiyu substrate) inside, the ultraviolet irradiation part 26 mounted on the upper part of the processing container 22, the long-distance electropolymerization part 27 for supplying nitrogen radicals, and the processed part Rotary drive unit 28 for substrate rotation, lift rod mechanism 30 for lifting and lowering the substrate to be processed inserted into the processing space, exhaust path 32 inside the decompression processing container 22, and supply gas (process gas such as nitrogen, oxygen, etc.) A gas supply portion 34 inside the processing container 22. The substrate processing apparatus 20 includes a frame 36 for supporting the above-mentioned main components. The frame 36 is a three-dimensionally assembled iron frame. The bottom frame 38 is placed on the floor in the shape of a table, and the vertical frame 40 is erected in the vertical direction from the rear portion of the bottom frame 38. The middle portion of the vertical frame 40 The middle frame 42 extending from the horizontal direction and being horizontally erected, and the upper end of the vertical frame 40,41 are horizontally erected from the horizontal upper frame 44. The bottom frame 38 is equipped with a cooling water supply unit 46, exhaust valves 48a and 48b including a solenoid valve, a turbo molecular pump 50, a vacuum line 51, a power supply unit 52 of the ultraviolet irradiation unit 26, and a lifting rod mechanism 30 The driving section 136, the gas supply section 34, and the like. A cable conductor 40a is formed inside the vertical frame 40 through which various types of cables can be inserted. An exhaust duct 仏 is formed inside the vertical frame 41. In addition, 'emergency stop switch 6G is installed on the bracket 58 fixed to the middle portion of the vertical frame 40', and the bracket α fixed to the middle portion of the vertical frame 41 is provided with a temperature adjusted by cooling water Adjuster M. Supported on the middle frame 42 are the above-mentioned processing container 22, ultraviolet irradiation section 26, telescoping m 卩 ㈣, lifting mechanism 30, and controller 57. In addition, the upper frame 44 is equipped with:

O: \ 87 \ 87879.DOC -12- 200421433 A gas box 66 of a plurality of gas lines 58 drawn from the gas supply section 34, an ion measurement controller 68, an apc controller 70 for pressure control, and a control turbine Molecular pump 50, TMP controller 72 and so on. FIG. 5 is a front view showing the configuration of a machine disposed below the processing container 22. As shown in FIG. FIG. 6 is a plan view showing the structure of a machine arranged below the processing container 22. As shown in FIG. FIG. 7 is a side view showing the structure of a machine arranged below the processing container 22. As shown in FIG. FIG. 8A is a plan view showing the structure of the exhaust path 32; and FIG. 8] g is a front view showing the structure of the exhaust path 32; FIG. 8 (: is a vertical cross-sectional view taken along the line BB. As shown in FIG. 5 to FIG. 7 As shown, an exhaust path 32 for exhausting the gas inside the processing container 22 is provided below the rear part of the processing container 22. The exhaust path 32 is installed to have a lateral size and a lateral width of the processing space formed inside the processing container 22. The same rectangular exhaust port 74 communicates. In this way, since the exhaust port 74 is extended to correspond to the length of the branch inside the processing container 22 to a wide size, the gas supplied to the inside from the front 22a side of the processing container 22 As will be described later, the inside of the processing container 22 flows backward to the exhaust path 32 at a certain flow rate (laminar flow) efficiently. As shown in FIGS. 8A to 8C, the exhaust path 32 has a The rectangular opening portion 32a communicating with the exhaust port 74, the left and right side surfaces of the opening portion 32a, and the tapered portion 32b inclined in a tapered shape facing downward, the bottom portion 32c where the passage area is concentrated at the lower end of the tapered portion 32b, and the bottom portion 3 2c forward The [shaped main exhaust pipe 32d, a discharge opening 32e opened at the lower end of the main exhaust pipe 32d, and a discharge discharge opening 32g opening to the lower portion 32f of the tapered portion 32b. The discharge opening 32e is communicated to the turbo molecular gang Suction port for pu 50. In addition, 32 g

O: \ 87 \ 87879.DOC -13- 200421433 is connected to the branch line 5 1 a. As shown in FIGS. 5 to 7, the gas discharged from the exhaust port 74 of the processing container 22 flows through the opening 32 a formed in a rectangular shape by the attraction force of the turbo molecular pump 50 and flows through the cone. The portion 32b to the bottom portion 32c are guided to the turbo molecular pump 50 through the main exhaust pipe 32d and the discharge port 32e. The discharge pipe 50a of the turbo molecular pump 50 is connected to a vacuum line 51 via a valve 48a. Therefore, the gas filled in the processing container 22 is discharged to the vacuum line 5 through the turbo molecular pump 50 when the valve is opened. In addition, a branching outlet port 51g is connected to the branching outlet 51 & in the exhaust path 32, and the branching line 51a is communicated with the vacuum line 5i by the opening of the valve 48b. Here, the configuration of the processing container 22 and its peripheral devices constituting an important part of the present invention will be described. ~ [Configuration of the processing container 22] Fig. 9 is an enlarged side sectional view showing the processing container 22 and its peripheral devices. Fig. 1G is a plan view of the inside of the processing container 22 with the lid member 82 removed from above. -As shown in Figs. 9 and 10, the processing container 22 is constructed by closing the upper opening of the chamber 80 by a cover member 82, and the inside thereof becomes a process space (processing space) 84. The processing container 22 is formed with a gas supply port% in the front portion 22a, and a transport port 94 is now formed in the rear portion. A gas injection nozzle section 93 to be described later is provided at 22 g of supply π, and a gate valve 96 to be described later is communicated to the transfer port 94. FIG. 11 is a plan view of the processing container 22. FIG. 12 is a front view of the processing container 22. @ 13 is a bottom view of the processing container 22. Figure 14 is along figure i2t ^ c_c

O: \ 87 \ 87879 DOC -14- 200421433 Vertical section view of line. FIG. 15 is a right side view of the processing container 22. FIG. 16 is a left side view of the processing container 22. As shown in Figs. 11 to 16, the bottom 22c of the processing container 22 is provided with an opening 73 inserted into the heating section 24, and an exhaust opening 74 having a rectangular opening as described above. The above-mentioned exhaust path 32 is communicated with the exhaust port 74. The chamber 80 and the cover member 82 are made of, for example, a cut aluminum alloy and processed into a shape as described above. In addition, on the right side 22e of the processing container 22, first and second windows 75, 76 for viewing the process space 84, and a sensor unit 77 for measuring the temperature of the process space 84 are mounted. In this embodiment, the first window 75 formed in an oval shape is arranged on the left side in the center of the right side 22e, and the second window 76 is formed in a circle shape on the right side in the center of the right side 22e. The state of the substrate w to be processed held in the process space 84 is advantageous for observing the film formation status of the substrate W to be processed. The windows 75 and 76 are configured so that they can be removed by the processing container 22 when a temperature measuring instrument such as a thermocouple is inserted. In addition, a sensor unit 85 for measuring the pressure in the process space 84 is mounted on the left side 22d of the processing container 22. The sensor unit 85 is provided with three pressure gauges 85a to 85c having different measurement ranges, and the pressure change in the process space 84 can be measured with high precision. In addition, the four corners of the inner wall of the processing container 22 forming the process space 84 are provided with curved portions 22h formed in an R shape, which not only can avoid stress concentration by the curved portions 22h, but also can exert a gas injection nozzle portion. The role of 93 O: \ 87 \ 87879.DOC -15- 200421433 The stability of the jet gas flow. [Configuration of the ultraviolet irradiation section 26] As shown in Figs. 8 to 11, the ultraviolet irradiation section 26 is mounted on the cover member 82. Inside the housing 26a of the ultraviolet irradiation section 26, two ultraviolet light sources (uv lamps), which are formed in a cylindrical shape, are arranged in parallel at a specific interval, 87, 87. This service, the external light sources 86, 87 have the characteristic of emitting ultraviolet rays with a wavelength of 172 nm, and are arranged in the rectangular openings 82a, 82b formed in the lateral extension of the cover member 82, and can be processed and held in the processing space 84. The position on the upper surface of the substrate w opposite to the front half of the process space 84 (at the left half of FIG. 8) is irradiated with ultraviolet rays. In addition, the intensity distribution of the ultraviolet rays irradiated by the ultraviolet light sources 86 and 87 extending in a straight line on the substrate to be processed W is not uniform, but varies depending on the position in the radial direction of the substrate to be processed w. w The outer peripheral side decreases, and the other side decreases toward the inner peripheral side. In this way, although the ultraviolet light sources 86 and 87 form an ultraviolet intensity distribution that changes individually and monotonously on the substrate to be processed w, the direction of change of the ultraviolet intensity distribution of the substrate to be processed W is opposite. Therefore, the driving energy of the ultraviolet light sources 86, 87 is optimized by the control of the UV lamp controller 57, so that a very uniform ultraviolet intensity distribution can be realized on the substrate w to be processed. In addition, the optimum value of such driving energy is obtained by changing the driving output of the ultraviolet light sources 86 and 87 and evaluating the film formation results to obtain the optimum value. In addition, the distance between the center of the substrate W to be processed and the cylindrical core O: \ 87 \ 87879.DOC -16- 200421433 of the ultraviolet light source 86, 87 is set to, for example, 50 to 300 mm, preferably 100. ~ 200 mm. Fig. 17 is a longitudinal sectional view showing the mounting structure of the ultraviolet light source 86 and δ7 in an enlarged manner. As shown in Fig. 17, the ultraviolet light sources 86 and 87 are held at positions 2-6b with respect to the bottom opening of the housing 26a of the ultraviolet irradiation section 26. In addition, the bottom opening 26b is formed as a rectangle that is open at a position above the substrate W to be held in the process space 84, and has a width in the lateral direction that is larger than that of the ultraviolet light source, and a rectangular shape with a longer overall length. A transparent window 88 made of transparent quartz is attached to the edge portion 26c of the bottom opening 26b. The transparent window 88 transmits the ultraviolet rays irradiated by the ultraviolet light source%, 87 into the process space 84, and has a strength capable of withstanding the pressure difference when the process space 84 is decompressed. In addition, a sealing surface 88a is formed on the lower edge portion of the transparent window 88 to abut a sealing member (o-ring) mounted in the groove of the edge portion 26c of the bottom opening 26b. The sealing surface 88a is formed of a coating for protecting the sealing member 89 or of black quartz. Thereby, the material of the sealing member 89 will not be decomposed, the deterioration of the protective sealing performance can be prevented, and the material of the sealing member 89 can be prevented from penetrating into the process space 84. In addition, the upper edge portion of the transparent window 88 is in contact with a protective cover 88b made of stainless steel to increase the strength of the locking member 91 when the transparent window 88 is sandwiched and prevent the transparent window 88 from being damaged due to the pressing force during the locking. In addition, in this embodiment, the ultraviolet light sources 86, 87 and the transparent window are arranged so as to be perpendicular to the flow direction of the gas flow sprayed from the gas spray nozzle portion 93. O: \ 87 \ 87879 DOC • 17- 200421433 The direction of I extension is not limited to this, for example, the ultraviolet light sources 86, 87 and the transparent window 88 may be arranged to extend in the direction of the flow of the gas flow. [Configuration of the gas injection nozzle portion 93] As shown in FIG. 9 and FIG. As shown, the processing container 22 is provided with a gas injection nozzle portion 93 that injects nitrogen or oxygen into the process space 84 at the supply port 22g opened at the front portion 22a. The gas injection nozzle portion 93 is described later in the process space. A plurality of ejection ports% are arranged in a row in the direction of the branch 84, and the gas ejected from the plurality of ejection ports 93a can pass through the surface of the substrate W to be processed in a laminar flow state, and is generated inside the process space 84. Stable airflow. _ In addition, the distance between the lower surface of the cover member 82 and the substrate w to be closed in the process space 84 is set to, for example, 5 to 100 mm, and preferably 25 to 85 mm. [Configuration of the heating section 24 ] Figure 9 and Figure 10 The heating section 24 is configured to include a base 110 made of aluminum alloy, a transparent quartz bell cover 112 fixed to the base 110, a SiC heater 114 housed in an inner space 113 of the quartz bell cover 112, and an opaque body. A heat reflecting member (reflector) 116 made of quartz, and a SiC substrate mounting table (heating member) 118 heated by a SiC heater 114 mounted on the bell jar 112. Therefore, the SiC heater 114 and the heat reflecting member 116 is isolated by the inner space 113 of the quartz bell cover 112, which can prevent contamination in the process space 84. In addition, in the cleaning step, it is only necessary to clean the SiC substrate setting table 118 exposed in the process space 84. Therefore, the operation of cleaning the SiC heater 114 and the heat reflection member 116 can be omitted. O: \ 87 \ 87879.DOC -18-200421433 The processed substrate W is held above the SiC substrate mounting table 118 by the holding member 120. On the other hand, the SiC heater 114 is mounted on the heat reflection member 116, and the heat emitted by the SiC heater 114 is radiated to the SiC substrate setting table 118, and the heat reflected by the heat reflection member 116 is also radiated to the SiC.8. The mounting base plate 11 Further, the present embodiment of the SiC heater 114 based on Example 9 is slightly away from the SiC substrate 118 is disposed in a state of heating to about 700 ° C.

The SiC substrate setting table 118 has good thermal conductivity, so it can efficiently transfer heat from the SiC heater 114 to the substrate W to be processed, and eliminate the temperature difference between the edge portion and the central portion of the substrate W to be processed. The processing substrate w φ is bent due to a temperature difference. [Structure of Rotary Drive Unit 28] As shown in FIGS. 9 and 10, the rotary drive unit 28 is composed of a holding member 120 that holds a substrate to be processed w above the sic substrate setting table 118, and is fixed to the base. The housing 122 below 110, the motor 128 for rotationally driving the ceramic shaft 126 of the shaft I20d coupled to the holding member 12 in the internal space 124 divided by the housing 122, and a magnet coupling 13 for transmitting the rotation of the motor 128 . In the rotation driving part 28, the shaft I20d of the holding member 120 is penetrated through the 112 quartz bell cover and coupled to the ceramic shaft 126, and the ceramic shaft 126 and the rotation shaft of the transmission motor 128 are connected in a non-contact manner through a magnet coupling π. The method transmits driving energy, so that the structure of the rotary driving system is simplified, and it contributes to the miniaturization of the entire device. The holding member 120 has arm portions 120a to 120c extending radially in a horizontal direction from the upper end of 120d. The substrate W to be processed is loaded on the holding member

O: \ 87 \ 87879.DOC -19- 200421433 The state of the arms 120a ~ 120c of 120 is maintained. In this way, the substrate W to be processed and the holding member 120 are rotated by the conveying motor 28 at a specific rotation speed, so that the temperature distribution of heat generated by the 114SiC heater can be averaged and the ultraviolet light source 8 6, 8 can be obtained. 7. The intensity distribution of the irradiated ultraviolet rays is uniform, and the surface can be uniformly formed into a film. [Configuration of the lifting rod mechanism 30] As shown in FIG. 9 and FIG. 10, 'the lifting rod mechanism 30 is provided below the chamber and on the side of the 112 quartz bell cover, and the lifting arms 132, A lifting shaft 134 connected to the lifting arm 132 and a driving portion 136 for lifting the lifting shaft 134 are configured. The elevating arm 132 is made of, for example, ceramics or quartz. As shown in FIG. 10 ', the elevating arm 132 includes a joint portion 13 2a to which the upper end of the elevating shaft 134 is joined, and an annular portion n2b surrounding the outer periphery of the SiC substrate mounting base 118. In addition, at the lifting arm 132, three contact pins 138a to 138c extending from the inner periphery of the annular portion 132b toward the center are provided at intervals of 120 degrees in the circumferential direction. The abutment pins 138a to 138c are lowered to the positions where the grooves 118a to 118c formed by extending from the outer periphery of the SiC substrate setting table 118 to the center are fitted, and are raised by the lifting arm 132 to move above the Sic substrate setting table 18. In addition, the contact pins 138a to 13c are arranged so as not to interfere with the arms 120a to 120c of the holding member 120 formed to extend from the center of the sic substrate mounting base 118 to the outer peripheral side. The lifting arm 132 and the robot arm of the transfer robot 98 'before taking out the substrate W to be processed', the above-mentioned abutment pins n8a to 138c are brought into contact with the bottom surface of the substrate to be processed, and then taken by the arms 120a to 120c of the holding member 120 Lifting the substrate to be processed W ° This means that the robot arm of the transfer robot 98 can be moved below the substrate w to be processed, and the lifting arm 132 can be lowered to transfer and hold the substrate to be processed. O: \ 87 \ 87879.DOC -20- 200421433 w 〇 [Configuration of quartz ring 100] As shown in FIG. 9 and FIG. 10, a quartz gasket 100 made of, for example, white opaque quartz is installed inside the processing container 22 to shield ultraviolet rays. The quartz washer 100 is a combination of a lower case 102, a side case 104, an upper case 106, and a cylindrical case 108 covering the outer periphery of the quartz bell cover 112, as described later. This quartz gasket 100 can prevent the processing container by covering the inner wall of the processing container 22 and the lid member 82 forming the process space 84. The thermal expansion effect with the lid member 82 prevents the inner walls of the processing container 22 and the lid member 82 from being oxidized by ultraviolet rays, and has the task of preventing metal contamination. [Configuration of the remote plasma unit 27] As shown in FIG. 9 and FIG. 10, the remote plasma unit 27 that supplies nitrogen radicals to the process space 84 is installed at the front portion 22a of the processing container 22 and is supplied through The pipeline 90 is connected to the supply port 92 of the processing container 22. In this long-distance plasma unit 27, an inert gas such as Ar and a nitrogen gas are supplied and activated by a plasma to form nitrogen radicals. The nitrogen radicals thus formed will flow along the surface of the substrate w to be processed to nitride the surface of the substrate. In addition, in other nitrogen gas, oxidation, nitrogen oxidation radical processes using 02, NO, n2O, NH3 gas and the like can also be performed. [Configuration of Gate Valve 96] As shown in FIG. 9 and FIG. 10, a transfer port 94 for transferring the substrate w to be processed is provided at the rear of the processing container 22. The transfer port 94 is closed by a gate valve 96

O: \ 87 \ 87879 DOC -21-200421433, only when the substrate W to be processed is transported, it is opened by the gate valve% opening operation. A transfer robot 98 is provided behind the gate valve 96. In addition, in cooperation with the opening operation of the gate valve 96, the robot arm of the transfer robot 98 will enter the processing space 84 through the transfer port, and perform the exchange operation of sending the processed substrate%. [Details of the above-mentioned constituent parts] (1) Here, the configuration of the gas injection nozzle part 93 will be described in detail. FIG. 18 is a longitudinal sectional view showing an enlarged configuration of the gas injection nozzle portion 93. FIG. FIG. B is a cross-sectional view showing the structure of the gas injection nozzle section 93 in an enlarged manner. Fig. 20 is an enlarged front view showing the configuration of the gas injection nozzle portion 93. As shown in FIG. 18 to FIG. 20, the gas injection nozzle portion is located at the center of the front surface, and has a supply pipe 90 that can communicate with the above-mentioned long-range plasma portion 27 above the communication hole 92, and a plurality of injection ports are installed. It is called ~ the nozzle plate 93bi ~ 93b3 arranged in a row in the horizontal direction. The spray ports 9% to 93an are, for example, small holes with a diameter of 1 mm, and are provided at intervals of 10 faces. In addition, in this embodiment, although the ejection ports% to 931 including small holes are provided, it is not limited to this. For example, a configuration may be adopted in which a small slit is used as the ejection port. The nozzle plate 931931 ^ is locked to the nozzle portion of the gas injection nozzle. Therefore, the gas sprayed from the cutouts 93ai ~ 93an will flow forward from the wall surface of the gas injection nozzle portion 93. When the injection ports 93a 丨 ~ 93an are installed in the tube of the tubular nozzle, the gas sprayed by the injection ports 93ai ~ 93an will return to the nozzle.

O: \ 87 \ 87879.DOC -22- 200421433 Behind the pipeline, gas retention occurs in the process space 84, causing the problem of unstable gas flow around the substrate W being processed. However, in this embodiment, since the injection nozzle holes 93ai to 93an are formed on the wall surface of the gas injection bird injection section 93, such a phenomenon that the gas returns to and returns to the rear of the nozzle does not occur, and it can be kept stable and processed. The laminar state of the gas flow around the substrate W. Thereby, the film formation on the to-be-processed substrate w can be uniformly formed. In addition, recessed portions 93ci to 93C3 having a function of retaining gas are formed on the inner wall of each of the nozzle plates 931 to 93133. Since the recesses 93q to 93 are provided above the injection ports 93ai to 93an, the flow velocity of the gas injected from each injection port 193 an can be averaged. As a result, the flow velocity over the entire area of the process space 84 can be averaged. In addition, each of the recesses 93Cl to 93c3 can communicate with the supply holes 93dl to 93d3 penetrating through the gas injection nozzle section 93. In addition, the central gas supply hole 93d2 is not formed at a different position from the communication hole 92, and is bent into a curved shape. The gas supply hole 934 in the center is supplied with a gas whose flow rate is controlled by the first mass controller 97a through a gas supply line 992. In addition, the gas supply holes 93d1 and 93d3 disposed around the gas supply holes 93d2 and 93d3 are supplied with the gas whose flow rate is controlled by the second mass controller 97b through the gas supply lines 99! And 9%. In addition, the first quality controller 97a and the second quality controller 97b are connected to the gas supply unit 34 via gas in & circuits 994 and 995, and control the gas flow rate from the gas U 34 to a predetermined location. Set flow. The gas supplied by the first mass control source 97a and the second mass controller 97b is ′ caused by the gas (, to Guanguan Road 99 ^ 993 reaching the gas supply hole 93 ~ 93, and

O: \ 87 \ 87879.DOC -23- 200421433 is filled into each of the recesses 93Cl ~ 93c: 3, and then sprayed into the process space 84 from the ejection ports 93ai ~ 93an. The gas in the process space 84 is sprayed in the entire area of the process space 84 so that the nozzle plates 9 extending in the widthwise direction of the front portion 22a of the processing container 22 can be blown into the entire area of the process space 84. The entire area of the space material flows at a specific flow rate (laminar flow) toward the two-hole side of the rear portion of the processing container 22. In addition, on the side of the rear portion 22b of the processing trough 22, the opening 74 of the rectangular row 1 extending in the widthwise direction of the rear portion 22b is opened, and the gas in the Guzhang process space 84 flows backward, according to a specific flow rate The air path w exhausts. In addition, in this embodiment, since the flow rates of the two systems can be controlled, for example, the first flow controller 97a and the second quality controller 9 can control different flow rates. By setting the flow rate (flow rate) of the gas supplied to the process space 84 to be different, the gas concentration distribution in the process space 84 can also be changed. In addition, the mi mass controller 97a and the second mass controller 97b supply different types of gases. For example, the first mass controller 97a may perform flow control of a nitrogen gas, and the second mass controller 97b may perform flow control of an oxygen gas. The pore body used may be, for example, an oxygen-containing gas, a nitrogen-containing gas, or a rare gas. (2) Here, the details of the structure of the heating section are illustrated. The figure is a longitudinal sectional view showing the structure of the heating section 24 in an enlarged manner. Figure M is an enlarged bottom view of the heating section 24. As shown in FIGS. 21 and 22, heating The part 24 is attached to a base 11 made of Sau alloy. The quartz bell cover 112 ′ is fixed to the bottom of the processing container 22 through a flange 14.

O: \ 87 \ 87879.DOC -24-200421433 22c. A Sic heater 114 and a heat reflecting member 116 are housed in the inner space ii3 of the quartz bell cover 112. Therefore, the SiC heater 114 and the heat reflecting member 116 are isolated from the process space 84 of the processing container 22, and are not in contact with the gas in the process space 84, and have a structure that does not cause pollution. The S i C substrate δ is set on the stage 11 8 and placed on the stone bell cover 112 opposite to the Si C heater 114, and the temperature can be measured by the pyrometer 119. The pyrometer 119 measures the temperature of the SiC substrate setting table us by the thermoelectric effect generated as the Sic substrate setting table 118 is heated, and in the control circuit, it uses the temperature signal detected by the pyrometer 119 to The estimated temperature 'of the substrate w to be processed' is then used to control the amount of heat generated by the SiC heater 114 based on the estimated temperature. In addition, when the internal space 113 of the 'quartz bell cover 112' is decompressed in the process space 84 of the processing container 22 as described later, the decompression system operates and decompresses simultaneously to reduce the pressure difference with the process space 84. Therefore, it is not necessary to increase the thickness of the case (for example, about 30 mm) in consideration of the pressure difference during the depressurization step, and the heat capacity of the quartz bell cover i 12 can be small, thereby improving the reactivity during heating. The base 110 is formed in a disc shape, and has a central hole 142 in the center through which a shaft 120d of the holding member 120 is inserted, and an inner water passage 144 for cooling water extending in the circumferential direction is provided in the center. The base 11 is made of aluminum alloy, and although its thermal expansion coefficient is large, it can be cooled by flowing cooling water through the first water passage 144. The flange 140 is a combination of a first flange 146 interposed between the base 11 and the bottom 22c of the processing container 22, and a second flange 148 fitted to the inner periphery of the first flange 146. On the inner peripheral surface of the first flange 146, a second water path 15 () for cooling water formed by extending in the circumferential direction is provided.

O: \ 87 \ 87879.DOC -25- 200421433 The cooling water supplied by the cooling water supply unit 46 flows through the water channels 144 and 150 to cool the base i 1〇 heated by the heat generated by the SiC heater J14 and The flange 140 suppresses thermal expansion of the base 110 and the flange 140. In addition, below the base 110, a first inflow port 154 that communicates with a first inflow pipe 152 through which cooling water flows into the water passage 144, and a first inflow pipe 156 that communicates with cooling water that passes through the water passage 144 are provided. Outlet 158. In addition, a plurality of mounting holes 162 (for example, about 8 to 12 locations) are provided in the circumferential direction near the outer periphery of the lower surface of the base 110 for inserting and locking the bolt 160 of the i-th flange 146. In addition, a temperature sensor 164 including a thermocouple for measuring the temperature of the SiC heater 114 is provided near a middle position in a radial direction below the base 110, and a terminal for connecting a power cable to a power supply to the siC heater 114 is provided. 166a ~ 166f. In addition, three areas are formed in the SiC heater 114, and the power supply cable connection terminals 166a to 166f are respectively provided with a + side terminal and a side terminal for supplying power to each area. In addition, a second inflow port 170 is provided below the flange 140 to communicate with a second inflow pipe 168 through which cooling water flows into the waterway 150, and a second inflow pipe 172 is connected to an outflow pipe 172 through which cooling water is discharged through the waterway 150. 2flow outlet 174. Fig. 23 is a longitudinal sectional view showing the mounting structure of the second inflow port 170 and the second outflow port 174 in an enlarged manner. Fig. 24 is a longitudinal sectional view showing the mounting structure of the flange 140 in an enlarged manner. As shown in FIG. 23, the first flange 146 is provided with an L-shaped communication hole 146a that can communicate with the second inlet 170. An edge portion of the communication hole 146a is connected to the water path 150. In addition, the second outflow port 174 is also connected to the water path 150 with the same structure as the second inflow port 170O: \ 87 \ 87879.DOC -26- 200421433. Since the water path 150 extends in the circumferential direction inside the flange 140, the cooling flange 140 also indirectly cools the quartz bell cover n2 held between the stepped portion 146b of the first flange 146 and the base 110. The temperature of the protruding portion 112a. Thereby, the projection U2a of the quartz bell cover 112 can suppress thermal expansion in the radial direction. # As shown in FIGS. 23 and 24, a plurality of position determination holes 78 are provided below the protruding portion 112a of the quartz bell cover u 2 at a specific interval in the circumferential direction. At this position, the hole 17 8 is a hole that is screwed into the bolt 17 6 on the base 11 q, but the base 11 with a large thermal expansion coefficient does not increase the load of the protruding portion 112a during thermal expansion in the radial direction, so it is formed. It has a larger diameter than the outer diameter of the bolt 176. That is, only the gap between the plug 176 and the position determining hole 178 can be allowed to thermally expand to the base 11 of the protruding portion i12a of the quartz bell cover 112. In addition, since the protruding portion U2a of the quartz bell cover 112 has a gap in the radial direction to the stepped portion 146b of the i-th flange 146, it can only allow the thermal expansion of the base 110 as a gap. The lower part of the dog bell 112 of the quartz bell cover 112 is sealed by a fork seal member (〇ring) 18o which is mounted on the upper surface of the base. The protrusion of the quartz bell cover and the upper part of the part 112a is mounted by being mounted. Sealed to the sealing members (o-rings) and 182 of the first flange 146. The upper surfaces of the first flange 146 and the second flange 148 are sealed by a sealing member (o-ring) 184, 186 attached to the bottom 22c of the processing container 22, and the lower surfaces of the second flange 148 are sealed. It is sealed by a sealing member (0 ring) 188 mounted on the base 11.

O: \ 87 \ 87879.DOC -27- In this way, since the seal between the base 110 and the flange 140 and between the flange 140 and the bottom of the processing container 邛 22 (: becomes a double seal structure, no matter which of them is the seal member When broken, it can be sealed by other sealing members, so the reliability of the sealing structure between the trough device 22 and the heating portion 24 can be brought back. For example, when the quartz mask 112 is broken or the protruding portion 112a is cracked, it can be sealed by A sealing member 8o disposed outside the protruding portion 12a ensures the airtightness inside the quartz bell cover 112 and prevents the gas in the processing container 22 from flowing to the outside. Or, even the sealing member 180 close to the heating portion 24 , 182 Deterioration ¥ 'It can also be installed at a position farther away from the heating section 24 than the outer sealing members 186, 188 to maintain the sealing performance between the processing container 22 and the base 110, so it can also prevent long-term The changing gas leaks. As shown in FIG. 21, the SiC heater 114 is placed on the heat reflecting member 116 in the inner space 113 of the quartz bell cover 112, and is clamped by a plurality of clamps standing on the base 110. Institution 19〇 while insured The clamp mechanism 190 has an outer cylinder 190a that abuts on the lower surface of the heat reflecting member 116, a shaft 190b that penetrates the outer cylinder i90 and abuts on the upper surface of the SiC heater 114, and faces the shaft i90b. The coil spring 192 of the outer cylinder 190a is squeezed. Further, since the structure of the clamp mechanism 19 is configured to sandwich the SiC heater 114 and the heat reflection member 116 with the spring force of the coil spring 192, for example, even when it is transported, The SiC heater 114 and the heat reflecting member 116 can also keep from contacting the quartz bell cover 112. In addition, because the spring force of the above-mentioned spiral spring 192 is constantly maintained, it can also prevent the screw from loosening due to thermal expansion. SiC The heater Π4 and the heat reflecting member 116 can be kept in a stable state of O: \ 87 \ 87879.DOC -28- 200421433. In addition, each clamp mechanism 190 is configured to adjust the sic heater to the base 11 The height position of H4 and the heat reflection member 116 is at any position. By adjusting the height positions of the plurality of clamp mechanisms 190, it can be maintained at the level of the SiC heater 114 and the heat reflection member 116. In addition, 'in the inner space of the quartz bell cover 112 11 Installed in 3: the terminals of the sic heater U4 and the connection members 194a to 194f for electrically connecting the power winding connection terminals 166a to 166f inserted through the base 丨 10 (however, as shown in FIG. 21 Connecting members 194a, 194c). FIG. 25 is a longitudinal sectional view showing the mounting structure of the upper end portion of the clamp mechanism 190 in an enlarged manner. As shown in FIG. 25, the clamp mechanism 190 is locked and inserted into the heat reflection member 116. The nut 193 at the upper end of the shaft 190b of the insertion hole 116a and the insertion hole 1146 of the SiC heater 114 is pressed through the gasket 195 in the axial direction [shaped gaskets 197, 199 and holds the SiC heater 114.

In the SiC heater 114, cylindrical portions 197a and 199a of L-shaped gaskets 197 and 199 are inserted into the insertion holes iue, and shafts 190b of the clamp mechanism 190 are inserted into the cylindrical portions 197a and 199a. The protruding portions 197b and 199b of the L-shaped spacers 197 and 199 are in contact with the upper and lower surfaces of the SiC heater 114. The shaft 190b of the clamp mechanism 190 is applied with a downward force by the spring force of the coil spring 192, and the clamp mechanism 19o and the outer cylinder 19oa are caused by the spring force of the coil spring 92. Forced upward. In this way, the spring force of the coil spring 192 is generated as a clamping force, so the heat reflecting member 116 and the SiC heater 114 are stably held, which can prevent vibration due to transportation O: \ 87 \ 87879.DOC- 29- 200421433 damage caused by movement.

The insertion hole 1 i4e of the SiC heater 114 is larger than the cylindrical portions 197 (;, 197 (1) of the L-shaped gaskets i97a, 197b, so there is a gap. Therefore, the SiC heater 114 has a gap. When the insertion hole 丨 丨 讣 is displaced relative to the shaft 190b due to the thermal expansion caused by the heat, the insertion hole 1146 can be displaced in the horizontal direction in the state of abutting the [protrusions of the letter-shaped gasket 197, 199 19713, 199b]. (3) Here, the SiC heater 114 will be described. As shown in FIG. 26, the SiC heater U4 is composed of a first heat generating portion 114a having a circular center portion, and The arc-shaped second and third heating portions 114b and 114c are formed to surround the outer periphery of the first heating portion 114a. A shaft 12 is provided at the center of the SiC heater 114, and the holding member 12 is inserted therethrough. 〇 (1 through the socket 114d. The heating sections 114a to 114c are connected in parallel to the heating control circuit 196, and then controlled by the temperature adjuster 198 to any set temperature. In the heating control circuit 196, it is controlled by control The voltage ′ supplied from the power source 200 to the heating units U4a to 114c is controlled by the SiC heater 114. In addition, if the capacity of the heating sections 114a to 114c is different, the load on the power supply will be increased. Therefore, in this embodiment, the capacity (2 KW) of each heating section 114a to 114c can be set. The heating resistance control circuit 196 can be selected: control method I, and the heating parts 114a to 114c are energized and generate heat; control method π, according to the temperature distribution of the substrate boundary to be processed, makes the first heating part in the center 丨14a, or one of the second and third heat generating parts 114b, 114c on the outer side; the control method m, in accordance with O: \ 87 \ 87879.DOC -30- 200421433, changes the temperature of the substrate W to be processed, and simultaneously causes the heat generating part 114a to 114c generate heat, and heat is generated by either the first heat generating portion 114a or the second, third heat generating portions 114b, and 114c. The substrate W to be processed is held by the holding member 120 while being rotated by each heat generating portion. When 114a ~ 114c is heated and heated, the peripheral part will warp upward due to the temperature difference between the outer peripheral side and the central part. However, in this embodiment, since the SiC heater 114 is made of SiC with good thermal conductivity Substrate setting table 118 to be heated The substrate W is processed, so the entire processed substrate W is heated by the heat from the SiC heater 114, and the temperature difference between the peripheral portion and the central portion of the processed substrate w can be minimized to prevent the substrate W from being processed. (4) Here, the structure of the 112 quartz bell cover will be described in detail. FIG. 27A is a plan view showing the structure of the quartz bell cover 112. FIG. 27B is a longitudinal sectional view showing the structure of the quartz bell cover 112. Fig. 28A is a perspective view of the structure of the quartz bell jar 112 seen from above; Fig. 28B is a perspective view of the structure of the quartz bell jar 112 seen from below. As shown in FIG. 27A, FIG. 27B, and FIG. 28A and FIG. 28B, the quartz bell cover 112 is formed of transparent quartz, and has a cylindrical portion 112b formed above the protruding portion 112a and a top plate ii2c covering the cylindrical portion 112b. , A hollow portion 112d extending below the center of the top plate 112c, and a beam portion 112e which is reinforced by an opening formed by a lateral frame and protruding from the projecting portion 112a. Since the protruding portion 112a and the top plate 112c receive a load, they are formed thicker than the cylindrical portion 112b. In addition, since the quartz bell cover 112 extends in the longitudinal hollow portion U2d and the beam portion 1126 in the horizontal direction intersects internally, it can increase the strength of the upper O: \ 87 \ 87879.DOC -31-200421433 in the downward and radial directions. . In addition, at the middle position of the beam portion 112e, the lower end portion of the hollow portion 1 i2d may be combined, and the insertion hole 112f in the hollow portion 112d also penetrates the beam portion 112e. A shaft 12Od of the holding member 120 can be inserted into the insertion hole 112f. Further, the Sic heater 114 and the heat reflecting member 116 described above are inserted into the inner space U3 of the quartz bell cover 112. In addition, although the sic heater 114 and the heat reflecting member 116 are formed in a disc shape, they can be divided into arcs, and can be assembled after being inserted into the inner space 113 without the beam portion 112e. In addition, the top plate 112c of the quartz bell cover 112 is protruded at three places (120-degree interval). It is a hub U2g to 112 of the SiC substrate setting table U8. Therefore, the SiC substrate mounting table U8 supported by the hubs 112g to 112i is placed so as to protrude slightly from the top plate l12c. Therefore, even if the internal pressure of the processing container 22 is changed, or the SiC substrate setting table 118 is changed downward due to a temperature change, it is possible to prevent contact with the top plate 112c. In addition, the internal pressure of the stone bell bell 112 is controlled by the decompression system to control the exhaust flow rate, as described later, so that the pressure difference from the process space 84 of the processing container 22 becomes 50 Dn or less, so the quartz bell bell can be used. The thickness of ιΐ2 is made relatively thin. Therefore, since the thickness of the top plate 112c can be made as thin as about 6 to 10 ^ mm, the thermal capacity of the quartz bell cover 112 can be reduced and the reactivity can be improved by increasing the heat conduction efficiency. In addition, the present The quartz bell cover Π2 of the embodiment is designed to have a strength capable of withstanding 100 Torr. FIG. 29 is a system diagram showing the structure of the exhaust system of the pressure reduction system. As shown in FIG. 29, the process of processing the container 22 The space material is as described above. After the valve 48a is opened, it passes through the exhaust path 32 which is connected to the exhaust port.

O: \ 87 \ 87879.DOC -32- 200421433 The attraction of turbo molecular pump 50 reduces pressure. In addition, a vacuum line 51 connected to the exhaust port of the turbo molecular pump 50 is connected to a pump (MBP) 201 that sucks exhaust gas. The internal space 1 丨 3 of the quartz bell cover 112 is an internal space 124 which is connected to the branch line 5 1 a ′ through the exhaust line 202 and is divided by the housing 122 of the rotary driving section 28. The pipeline 204 is connected to the branch pipeline 51a. The exhaust pipeline 202 is provided with a pressure gauge 205 for measuring the pressure in the internal space 1 丨 3, and a pressure gauge 205 which is opened when the internal space 113 of the quartz bell cover 112 is decompressed. Valve repair 206. The branch line 51a is provided with the branch line 208 having the valve 48b and the branch valve 48b as described above. The branch pipe 20 is provided with a valve 21 and a variable diaphragm 211 which can be opened in the initial stage of the pressure reducing step, and can be more concentrated than the valve 48b. In addition, the exhaust side of the turbo molecular pump 50 is provided with a valve 2 12 for opening and closing, and a pressure gauge 214 for measuring the pressure on the exhaust side. In addition, a non-return check valve 218, a diaphragm 220, and a valve 222 are provided on a turbine pipeline 216 that connects the N2 line for turbine shaft cleaning to the turbo molecular pump 50. In addition, the above-mentioned valves 206, 210, 212, and 222 include solenoid valves and are opened in accordance with a control signal from a control circuit. ^ In the decompression system constructed as described above, when the decompression steps of the processing container 22, the quartz bell cover 112, and the rotary driving unit 28 are performed, the pressure is not depressurized at one go, but gradually decompressed to gradually reduce the pressure. Close to vacuum and decompress. First, by opening the valve 206 of the exhaust pipe 202 provided in the quartz bell cover 112, the internal space 113 of the quartz bell cover 112 and the process space 84 pass through the O: \ 87 \ 87879.DOC -33- 200421433 exhaust path 3 2 is in a connected state, and pressure is uniformized. Thereby, the pressure difference between the internal space 113 and the process space 84 of the quartz bell cover 112 at the beginning of the decompression step is made small. Next, the valve 210 provided in the branch line 208 is opened, and the variable diaphragm 211 is used to perform pressure reduction at a small flow rate which is concentrated. Thereafter, the valve 48b provided in the branch line 5 1 a is opened, and the exhaust flow rate is increased stepwise. In addition, compare the pressure of the quartz bell cover 112 measured by the pressure gauge 205 with the pressure of the process space 84 measured by the pressure gauges 85a ~ 85c which are sensed as the early element 85. When the pressure difference is 50 Torr or less, the valve 48b opens. By this, in the decompression step, the pressure difference acting on the inside and outside of the quartz bell cover 1 丨 2 is relaxed, and unnecessary stress is not applied to the quartz bell cover 112 to perform the decompression step. And after a certain time elapses, the valve 4 8 a is opened, and the exhaust gas flow rate caused by the attraction of the thirsty molecular pump 50 is increased. The pressure reduction processing container 22, the inner cover 112 of the stone center 4, and the rotation driving portion 28 Until it becomes a vacuum. (5) Here, the structure of the said holding member 120 is demonstrated. Fig. 30A is a plan view showing the structure of the holding member 120, and Fig. 30b is a side view showing the structure of the holding member 120. As shown in FIGS. 30A and 30B, the holding member 12o is composed of arm portions 120a to 120c that support the substrate W to be processed, and an axis i20d that can be combined with the arm portions 120a to 120c. The arm portions 120a to 120c are formed of transparent quartz to prevent contamination in the process space 84 and not to shield the heat from the SiC substrate setting table 118. The upper end of the axis 120d is used as the central axis at 120 ° intervals. It extends radially in the horizontal direction. O: \ 87 \ 87879.DOC -34- 200421433 In addition, at the middle position in the longitudinal direction of the arm portions 120a to 120c, the hubs 120e to 120g abutting on the substrate W to be processed protrude. Therefore, the boundary of the substrate to be treated is supported by the three points that abut the hub 120e ~ 120g. As described above, since the holding member 20 is configured to support the substrate to be processed with point contact ..., the SiC substrate setting table 118 can hold the substrate to be processed at a distant position only by a small distance. The distance between the Sic substrate mounting table 118 and the substrate to be processed W is, for example, about 20 mm, preferably about 3 to 10 mm. That is, 'the processed substrate W is rotated while floating above the SiC substrate mounting table 118', and the heat from the SiC substrate mounting table 118 can be more uniformly radiated than those directly placed on the SiC substrate mounting table 118. It is not easy to generate a temperature difference between the peripheral portion and the center portion, and it is also possible to prevent warping of the substrate W to be processed due to the temperature difference. Since the substrate W to be processed is held at a position separated from the SiC substrate mounting table 118, even if warping occurs due to a temperature difference, it will not contact the sic substrate mounting table 118 ', and the temperature becomes uniform as it is at regular times. Can return to the original level. In addition, the axis 120d of the 'holding member 120 is formed into a rod shape from opaque quartz, and is inserted through the insertion hole 112f of the SiC substrate setting table us and the quartz bell cover 112 and extends below. In this way, although the holding member 120 holds the substrate W to be processed in the process space 84, since it is formed of quartz, there is no need to worry about contamination caused by metal products. (6) Here, the structure of the rotation drive unit 28 will be described in detail. Fig. 31 is a longitudinal sectional view showing the structure of the rotation driving portion 28 which is not disposed below the heating portion 24. FIG. 32 is an enlarged longitudinal sectional view of the rotation driving section 28. O: \ 87 \ 87879.DOC -35- 200421433 As shown in Fig. 31 and Fig. 32, the bracket 23, which is used to support the rotary drive section 28, is locked below the base ιo of the heating section 24. The bracket 23 is provided with a rotation position detecting mechanism 232 and a bracket cooling mechanism 234. In addition, a ceramic shaft 126 is inserted below the bracket 230 and fixed to the shaft 120d of the holding member 12o. The ceramic bearing 236, 236,237 which can rotate and support the ceramic shaft 126 can be fixed and fixed by a screw 24o.壳 122。 The housing 122. In the housing 122, since the rotating part is composed of the ceramic shaft 126 and the ceramic bearings 236 and 237, the metal can be prevented from being contaminated. The housing 122 has a flange 242 with a bolt 24 inserted therethrough, and a bottomed cylindrical partition wall 244 extending below the flange 238. On the outer peripheral surface of the partition wall 244, there are provided exhaust holes 246 that can communicate with the exhaust pipe 208 of the aforementioned decompression system, and the gas in the internal space 124 of the housing 122 is the decompression step of the aforementioned decompression system. In the middle, it is exhausted and decompressed. Therefore, the gas in the process space 84 can be prevented from flowing to the outside along the axis 120d of the holding member 120. Further, a driven side magnet 248 of the magnet coupling 13 is housed in the internal space 124. The driven-side magnet 248 is covered with a magnet cover 250 fitted to the outer periphery of the ceramic shaft to prevent contamination, and is installed so as not to contact the gas in the internal space 124. 'The magnet cover 250 is a ring-shaped cover made of aluminum alloy, and a ring-shaped space for storage is formed inside. Contained in a state where it will not shake. In addition, the joint portion of the magnet cover 250 is welded with an electron beam to form a gap-free connection, and it does not flow out of silver like soldering to cause contamination. In addition, an outer peripheral side rotating portion 252 formed in a cylindrical shape is fitted on the outer periphery of the housing 122 and is rotatably supported by bearings 254 and 255. In addition, O: \ 87 \ 87879.DOC -36- 200421433 is mounted on the inner periphery of the atmosphere-side rotating portion 252, and the driving-side magnet 2 5 6 of the magnet coupler 130 is attached. The lower end portion 252a of the atmosphere-side rotating portion 252 is connected to the drive shaft 128a of the motor 128 via the transmission member 257. Therefore, the rotational driving energy of the motor 128 is transmitted to the ceramic shaft 126 through the magnetic force between the driving-side magnet 256 provided in the atmosphere-side rotating portion 252 and the driven-side magnet 248 provided inside the housing 122. To the holding member 120 and the substrate W to be processed. Further, a rotation detection unit 258 for detecting the rotation of the atmosphere-side rotating portion 252 is mounted outside the atmosphere-side rotating portion 252. The rotation detection unit 258 is a disc-shaped slit plate 260, 261 mounted on the outer periphery of the lower end portion of the atmosphere-side rotation portion 252, and a photo interrupter 262 that optically detects the rotation amount of the slit plate 260, 261. , 263. The photointerrupters 262 and 263 are fixed to the housing 122 on the fixed side by a bearing frame 264. In addition, in the rotation detection unit 258, since a pair of optical interrupters 262, 263 can simultaneously detect pulses matching the rotation speed, the accuracy of rotation detection can be improved by comparing the two pulses. FIG. 33A is a cross-sectional view showing the structure of the bracket cooling mechanism 234, and FIG. 33B is a side view showing the structure of the bracket cooling mechanism 234. As shown in FIGS. 33A and 33B, the bracket cooling mechanism 234 has a water path 230a for cooling water extending in the circumferential direction inside the bracket 230. A cooling water supply hole 230b is connected to one end of the water path 230a, and a cooling water supply and discharge hole 230c is connected to the other end of the water path 230a. The cooling water supplied from the cooling water supply unit 46 passes through the water passage 230a from the cooling water supply hole 230b and is discharged from the cooling water supply discharge hole 230c O: \ 87 \ 87879.DOC -37- 200421433, so it can be cooled. The entire bracket 230. FIG. 34 is a cross-sectional view showing the configuration of the rotation position detecting mechanism 232. As shown in FIG. 34, a light emitting element 266 is mounted on one side of the bracket 230, and a light receiving element 268 that receives light from the light emitting element 266 is mounted on the other side of the bracket 230. In the center of the bracket 230, a central hole 230d through which the shaft 120d of the holding member 120 can be inserted is penetrated in the up-down direction, and through-holes 230e, 230f are formed in the central hole 230d to cross in the transverse direction. The light emitting element 266 is inserted into the edge portion of the one through hole 230e, and the light receiving element 268 is inserted into the edge portion of the other through hole 230f. Since the shaft 120d is interposed between the through holes 230e and 230f, the rotation position of the shaft 120d can be detected by the output change of the light receiving element 268. (7) Here, the configuration and function of the rotational position detection mechanism 232 will be described in detail. FIG. 35A is a diagram showing a non-detection state of the rotation position detection mechanism 232, and FIG. 35B is a diagram showing a detection state of the rotation position detection mechanism 232. As shown in FIG. 35A, the shaft 120d of the holding member 120 is chamfered in the tangential direction on the outer periphery. When the intermediate position between the light-emitting element 266 and the light-receiving element 268 is rotated, the chamfered portion 120i is parallel to the light emitted from the light-emitting element 266. At this time, the light from the light-emitting element 266 is irradiated to the light-receiving element 268 through the side of the chamfered portion 120i. Thereby, the output signal S of the light receiving element 268 is turned ON and transmitted to the rotation position determination circuit 270. As shown in FIG. 35B, when the axis 120d of the holding member 120 rotates and the chamfering process O: \ 87 \ 87879.DOC -38- 200421433 is shifted from the middle position, the light added by the light-emitting element and the axis The masking causes the output signal s of the rotation position determination circuit to be turned OFF. Fig. 36A is a waveform diagram showing the output signal s of the rotation position detection mechanism plus the light receiving element ，, and Fig. 36B is a waveform diagram of the pulse signal p output from the rotation position determination circuit. As shown in FIG. 36A, the rotation position of the light receiving element 268 causes the light intensity (output signal S) of the light of the λ earth light element 266 to change in a radial pattern. The rotation position determination circuit 27G sets a value η between the output signal s, and outputs a pulse p when the wheel-out signal s becomes the threshold value H or more. The pulse P is output as a detection signal for detecting the rotation position of the holding member 120. That is, as shown in FIG. 10, the rotation position determining circuit 27 judges that the arm κούρος of the holding member 120 does not interfere with the contact pins 138a to 138c of the lifting arm 132, and does not interfere with the mechanical arm of the transport robot Position, and this detection signal (pulse P) is output. (8) Here, based on the detection signal (pulse P) output from the rotation position determination circuit 270, the rotation position control processing of the control circuit will be described. Fig. 37 is a flowchart for explaining a rotational position control process performed by the control circuit. As shown in FIG. 37, in S11, when there is a control signal indicating the rotation of the substrate w to be processed, it proceeds to S12 to start the motor 128. Next, the process proceeds to S13 to check whether the signal of the light receiving element 268 is ON. When the signal of the light-receiving element 268 in S13 is ON, it proceeds to s14, and the period of the self-detection signal (pulse O: \ 87 \ 87879.DOC -39- 200421433 punch p) calculates the holding member 2 and the substrate to be processed. The number of rotations of w. Next, the process proceeds to S15, and it is confirmed whether or not the number of rotations η of the holding member 12 and the substrate w is a target number of rotations set in advance. At si5, when the rotation of the holding member m and the substrate w to be processed reaches the target number of rotations, return to the above S13, and confirm again whether the number of rotations of the motor 128 has increased by 0. In addition, in the above S15, when n = na At this time, since the rotation number 11 of the holding member 12 and the substrate to be processed w reaches the target rotation number of cents, it proceeds to and confirms whether there is a control signal for the motor stop. At S17, when there is no control signal for motor stop, it returns to 313 above, and when there is a control signal for motor stop, it advances to ㈣ to stop the motor. Next, it is checked whether the signal of the light receiving element 268 is 0N, and iteratively repeats until the signal of the light receiving element becomes ON. ° ~ In this way, the arm portions 120a to 120c of the holding member 120 will not interfere with the abutment pins 138a to 138c of the lifting arm 132, and can be stopped at a position that does not interfere with the robot arm of the conveyance motor 98. In addition, at the rotation position control

Which case can be used to determine the second method of using the period of the output signal from the light receiving element 268 to obtain the number of rotations, but for example, the number of rotations output by the above-mentioned optical interrupters 262, 263 may be used to calculate the number of rotations. Formation of the side of 12 2 (9) Here, the structure of the windows 75 and 76 of the processing container will be described in detail. FIG. 38 is a cross-sectional view of the installation place of the cross section 76 of the enlarged display window 75 when the windows 75 and 39 are seen from above. Figure Figure. Figure 40 is a cross-sectional view of the enlarged display window% O: \ 87 \ 87879.DOC -40- 200421433. As shown in Fig. 38 and Fig. 39, the first window 75 is a process space 84 formed by supplying gas to the inside of the processing container 122. Since it is reduced in pressure to a vacuum, it has a higher airtight structure. The window 75 is a double structure having a transparent quartz 272 and a glass 274 that blocks ultraviolet rays. The transparent quartz 272 is in contact with the window mounting portion 276, and the first window frame 278 is fixed to the window mounting portion 276 by a small screw 277. A sealing member (0 ring) 280 which hermetically seals between the window mounting portion 276 and the transparent quartz 272 is attached. In addition, the second window frame 282 is fastened with a small screw 284 on the outer surface of the first window frame 278 in a state in which the IJV glass 274 abuts. In this way, the window 75 can shield the ultraviolet light irradiated by the ultraviolet light source (UV lamp) 86, 87 by the UV glass 274, prevent it from leaking to the outside of the process space 84, and prevent the supply to The gas in the process space 84 flows out. In addition, the opening 286 penetrating the side surface of the processing container 22 penetrates diagonally toward the center of the processing container 22, that is, toward the center of the substrate W to be held on the holding member 120. Therefore, the window 75 is provided at a position deviated from the center of the side surface of the processing container 22, but is formed in an elliptical shape which can be seen in a wide direction in the lateral direction, and the state of the substrate W to be processed can be confirmed from the outside. The second window 76 has the same structure as the above-mentioned window 75, and has a double structure of transparent quartz 292 and UV-shielding UV glass 294. The transparent stone 292 is in a state of being in contact with the window mounting portion 296, and the first window frame 298 is locked and fixed to the window mounting portion 296 with a small screw 297. At the window mounting section 296 O: \ 87 \ 87879.DOC -41-Zhu Wenxu has a sealing structure that hermetically seals with transparent quartz 292) 〇〇 Also, outside the first window frame 298, The UV glass 294 is connected ^ The second window frame is locked and fixed with a small screw 304. Gu 76 uses UV glass 294 to shield the ultraviolet light source (UV lamp) 86, 7 = the ultraviolet rays irradiated to prevent it from leaking to the outside of the process space, and by the sealing effect on the sealing member 3G0, it is prevented from being supplied to the process space % Of the gas flows out. In addition, in this embodiment, although a configuration in which a 75 ′ 76 is disposed on the side of the processing container 22 is taken as an example for description, it is not limited to this, and three or more windows σ ′ may be provided, or of course Can be placed outside the side. (10) Here, the respective cases 10, 102, 106, and 108 constituting the quartz washer 100 will be described. FIG. 9 and FIG. As shown in FIG. 0, the quartz ring i 〇〇 is a combination of a lower box body (〇2, a side box body 104, an upper box body 106 and 108 cylinder body), each of which is formed of opaque quartz 'It is provided for the purpose of protecting the processing container 22 made of alloy gas from ultraviolet gas and ultraviolet rays, and preventing the metal contamination of the processing container 22. FIG. 41A is a plan view showing the structure of the lower case 102, and FIG. 41B is a view showing the lower part. A side view of the box body 102. As shown in Figs. 41A and 41B, the lower box body 102 is formed in a plate shape corresponding to the shape of the inner wall of the processing container 22, and is provided at the center with respect to the SiC substrate. The circular opening 310 of the stage 11 8 and the substrate to be processed w. The circular opening 310 is formed in a size that can be inserted into the cylindrical box body 10, O: \ 87 \ 87879.DOC -42- 200421433 At 120-degree intervals, recesses 31aa to 31c for inserting the ends of the arms 120a to 120c of the holding member 120 are provided. In addition, the positions of the recesses 310a to 310c are the arms 120a to 120c of the holding member 120. 120c does not interfere with the contact pins n8a ~ 138c of the lifting arm 132, and does not It interferes with the position of the robotic arm of the transfer robot 98. In addition, the lower case 102 is provided with a rectangular opening 3 12 formed on the bottom of the processing container 22. The exhaust port 74 of the ridge is provided. In addition, the lower case 1 〇2 A position determining protrusion 314 & 3141 is provided below the asymmetric position. Further, on the inner periphery of the circular opening 310, a recessed portion 3iod to which a protrusion of a cylindrical case 108 described later is fitted is formed. In addition, a step portion 3 15 is provided on the edge portion of the lower case ι02, which is then closed to the side case 104.

42A is a plan view showing the structure of the side box 104, FIG. 42B is a front view of the side box 104, FIG. 42C is a rear view of the side box 104, FIG. 42D is a left side view of the side box 104, and FIG. 42E is Side box} 04 right side view. As shown in FIGS. 42A to 42E, the outer shape of the side case 104 is formed into a substantially rectangular frame shape corresponding to the inner wall shape of the processing container 22, and the four corners are R-shaped. A process space 84 is formed on the inside. In addition, the side box 104 is provided on the front surface 104a with an elongated slit 316 opposite to the plurality of injection nozzles 93a of the gas injection nozzle portion 93 and extending in the horizontal direction, and is provided to be communicated with the remote A U-shaped opening 317 located at a distance from the communication hole 92 of the plasma portion 27. In this embodiment, the slits 316 and the openings 317 are connected to each other, but they may be formed as separate openings. O: \ 87 \ 87879.DOC -43- 200421433 In addition, on the back surface 104b, the side box 104 is formed with a recess 318 through which the robot arm of the transport robot 98 passes, at a position opposite to the transport port 94. In addition, the side box 104 is formed with a circular hole 319 on the left side 104b with respect to the sensor unit 85, and on the right side 104d, a window 75, 76 with respect to the month is formed. Holes 320 ~ 322 with the sensor unit 77. Fig. 43A is a bottom view showing the constitution of the upper case 106, and Fig. 43β is a side view showing the constitution of the upper case 106. As shown in FIG. 43A and FIG. 43B, the outline shape of the upper case 106 is formed into a plate shape corresponding to the shape of the handle H 22, and rectangular openings 324 are formed at positions opposite to ultraviolet light sources (UV lamps) 86, 87 , 325. In addition, a stepped shape 326 of the side box body 104 is fitted on an edge portion of the upper box body 106. ° In addition, the upper case 106 is provided with circular holes 327 to 329 corresponding to the shape of the cover member 82, and rectangular rectangular holes 33. Fig. 44A is a plan view showing the structure of the cylindrical case 108, Fig. 44β is a side longitudinal sectional view of the cylindrical case 108, and Fig. 44C is a side view of the cylindrical case 1⑽. As shown in FIG. 44A to FIG. *, The cylindrical box body 108 is formed in a cylindrical shape such as to cover the outer periphery of the quartz bell cover U2, and the upper end edge portion is provided with contact pins 138a to 138c inserted into the lifting arm 132 The recesses i0aa to 108c. In addition, in the cylindrical body PD8, a recess for fitting the lower case ι02 is formed on the outer periphery of the upper end portion; a protrusion 108d for a fitting position of 310d. (11) Here, the sealing structure of the lift lever mechanism 30 will be described. Fig. 45 is a longitudinal sectional view showing an enlarged lever mechanism 3G in an enlarged manner. Figure_Enlarged O: \ 87 \ 87879.DOC -44- 200421433 A longitudinal sectional view showing the sealing structure of the lifting rod mechanism 30. Son-in-law 45Η, as shown in FIG. 46, the lifting rod mechanism 30 is configured to drive the lifting shaft 134 up and down to drive the lifting arm 132 inserted into the chamber 80 up and down, and a bellows-shaped telescopic tube 332 The outer periphery of the through-hole 8 inserted into the chamber 80, such as the inner descending shaft 134, is covered to prevent indoor contamination. The telescopic tube 332 has a telescopic shape, and is formed of, for example, a nickel-chromium-iron heat-resistant alloy or a corrosion-resistant nickel alloy. In addition, the through-hole 80a is closed by a cover member 340 inserted through the lowering shaft 134. In addition, a cylindrical ceramic cover 338 is fitted and fixed to the connecting member 336 of the lifting arm 132 that locks the upper end of the lifting shaft 134 with a bolt 334. The pottery cover 338 is formed so as to extend below the connecting member 336, and is provided so as to cover the periphery of the telescopic tube 332 without being directly exposed in the chamber 80. Therefore, the telescopic tube 332 extends to the upper side when the lifting space Π2 is raised in the process space 84, and is covered by a cylindrical cover 338 formed of ceramics. Therefore, the telescopic tube 332 is inserted into the cylindrical cover 338 of the through hole 80a so as to be vertically adjustable without being directly exposed to the gas and heat of the process space 84, so that deterioration due to the gas and heat can be prevented. (12) The following ‘17 brother Ming ’uses the substrate processing apparatus 2 0 ′ to perform the ultraviolet radical oxidation treatment on the surface of the substrate W to be processed, and the long-distance plasma radical nitridation treatment performed thereafter. [Ultraviolet Radical Oxidation Treatment] Fig. 47A is a side view and a plan view showing the radical oxidation of the substrate W to be processed using the substrate processing apparatus 20 of Fig. 2, and Fig. 47b is a plan view showing the structure of Fig. 47A. O: \ 87 \ 87879.DOC -45- ^ UU421433 As shown in FIG. 47A, in the aforementioned process space 84, oxygen gas can be supplied from the gas injection nozzle portion 93, and after flowing along the surface of the substrate to be processed, it is discharged through The air port 74, the turbo molecular pump 50 and the pump 201 are exhausted. By using the thirsty molecular pump 50, the process force of the aforementioned process space 84 is set to the range of 〇 ～ 3 ～ 丨 0.6 τ〇 required for the oxidation of oxygen radicals of the plate W. Oxidation of oxygen free radicals can form a stable and reproducible oxide film with a film thickness of less than 1 nm on the surface of the Shixi substrate, especially a film thickness of about 0.41m, which is equivalent to 2 ~ 3 atomic layers. Oxide film. At the same time, it is more desirable to form an oxygen radical in the oxygen stream thus formed by driving the external light source 86, 87 which generates ultraviolet light with a wavelength of 172 nm. The formed oxygen radicals oxidize the surface of the rotating substrate while flowing along the surface of the substrate boundary to be processed. As a result, as shown in FIG. 47B, it can be seen that the ultraviolet light sources 86 and 87 are tubular light sources extending in the direction intersecting with the direction of the oxygen flow. The turbo molecular pump 50 will be discharged from the process space through the exhaust port 74. 84 gas. On the other hand, an exhaust path shown by a dotted line in FIG. 47B that leads directly from the aforementioned exhaust port% to the pump 50 is blocked by closing the valve 48b. Fig. 48 is shown in the substrate processing apparatus 20 of Fig. 2. The substrate temperature is set to 450 ° C by the steps of Fig. 47 and Fig. 47B, and the intensity of the ultraviolet light irradiation and the oxygen flow rate, or the oxygen partial pressure are varied. In the case where a silicon oxide film is formed on the surface of a silicon substrate, the relationship between the film thickness and the oxidation time is changed. However, in the experiment in Fig. 48, the natural oxide film on the surface of the silicon substrate was removed before radical oxidation. Sometimes, the carbon remaining on the substrate surface was removed from the UV-excited nitrogen radicals. In addition, it was more in an Ar atmosphere. In the process, the substrate surface was planarized by performing a high temperature heat treatment at O: \ 87 \ 87879.DOC -46- 200421433 at about 950 ° C. As the ultraviolet light source 86, 87, an excimer lamp having a wavelength of 172 nm was used. Referring to Figure 48, the data of Series 1 shows that the UV intensity is set to 5% of the reference intensity (50 mW / cm2) of the window surface of the UV light source 24B, the process pressure is set to 665 mPa (5m Torr), and the oxygen flow rate. The relationship between the oxidation time and the thickness of the oxide film when set to 30 SCCM, and the data of Series 2 shows the oxidation in the case where the ultraviolet light intensity is set to 0, the process pressure is set to 133Pa (l τοτ), and the oxygen flow rate is set to 3SLM. The relationship between time and oxide film thickness. In addition, the data of Series 3 shows the relationship between the oxidation time and the oxide film thickness when the UV light intensity is set to 0, the process pressure is set to 2.66Pa (20m Ton *), and the oxygen flow rate is set to 150 SCCM. The data of Series 4 shows the oxidation time and the thickness of the oxide film when the UV light intensity is set to 100%, that is, the aforementioned reference intensity, the process pressure is set to 2.66Pa (20m Torr), and the oxygen flow rate is set to 150 SCCM. relationship. In addition, the data of Series 5 shows that the ultraviolet light intensity is set to 20% of the reference intensity, the process pressure is set to 2.66Pa (20m Torr), and the oxygen flow rate is set to 150 SCCM. The φ-shaped oxidation time and the thickness of the oxide film The data of Series 6 shows the relationship between the oxidation time and the thickness of the oxide film when the intensity of the ultraviolet light is set to 20% of the reference intensity, the process pressure is about 67Pa (0.5 Tοτ), and the oxygen flow rate is 0.5SLM. In addition, the data of Series 7 shows the relationship between the oxidation time and the oxide film thickness when the ultraviolet light intensity is set to 20% of the reference intensity, the process pressure is set to 665Pa (5 Tοιτ), and the oxygen flow rate is set to 2SLM. The data shows that the ultraviolet light intensity is set to 5% of the reference intensity, the oxidation time when the process pressure is 2.66Pa (20m Torr) and the oxygen flow rate is 150SCCM O: \ 87 \ 87879.DOC -47- 200421433 and the oxide film Thick relationship. In the experiment shown in Fig. 48, the film thickness of the oxide film was obtained by the XPS method. However, there is a unified method for obtaining such a very thin oxide film thickness below 1 nm. The inventor of this month performed background correction and separation correction of 3/2 and 1/2 rotation states on the observed Si2p execution shown in FIG. 49, and the Si2p3 / 2XPS obtained as shown in FIG. 5G Spectrum-based, Yi. And ^^ (Z. H. Lu5 et al. 3 Appl. Phys5 Lett. 71 (1997), pp. 2764) ”is used to calculate the film thickness d of the oxide film using the formula and coefficient shown in Equation (2). d = Asina · In [I-/ (/? I u ^ (1) λ = 2. 96 β = 0.75 But in Equation ⑴, α is the measured angle of the XPS spectrum shown in Figure 55. In the example, '3G and i' are set, and IX + is the integrated intensity corresponding to the spectral peak of the oxide film (house + i2x + i3x + i4x), which corresponds to the energy region between 102 and 104 eV in the figure. The peak value that can be seen. On the other hand, it is broadly corresponding to the integrated intensity of the spectral peak due to the silicon substrate in the energy region around 100eV. Referring to FIG. 48 again, it can be confirmed that the light intensity is small compared to ultraviolet light, so 幵 v In the case where the density of oxygen free radicals is small (series 丨, 2, 3, 8), although the oxide film thickness of the initial oxide film is 0 nm, the oxide film thickness will gradually increase gradually with the oxidation time. In series 4, 5, 6, and 7 in which the ultraviolet light irradiation intensity is set to 20/0 or more of the reference intensity, as schematically shown in Fig. 51, the oxide film grows to approximately _4 nm2 after the growth starts. At that time, it stagnates, and O: \ 87 \ 87879.DOC -48-200421433 After a certain amount of stagnation time, it will start to grow rapidly again. Figure 48 The relationship in Fig. 51 means that the oxidation treatment on the surface of the silicon substrate can stably form a very thin oxide film with a thickness of about 0.4 nm. Also, as seen in Fig. 48, it can be seen that due to such a dwell time, The degree of the oxide film thus formed is the same. That is, according to the present invention, an oxide film having the same thickness as about 0.4 nm can be formed on a silicon substrate. Figs. 52A and 52B are schematically shown on the silicon. The process of forming a thin oxide film on a substrate. In these figures, it must be noted that the structure on the silicon (100) substrate has been very simplistic. Referring to FIG. 52A, 2 oxygen atoms are bonded to each silicon atom on the surface of the silicon substrate. In the typical state, the silicon atoms on the substrate surface are located by two silicon atoms inside the substrate and two oxygen atoms on the substrate surface to form a secondary oxide. In this regard, in the state of FIG. 52B, the silicon atom on the top layer of the silicon substrate is obtained from 4 oxygen atoms to obtain a stable state of Si4 +. It may be because of this reason that the oxidation proceeds rapidly in the state of FIG. 52A. , Becomes Oxidation stagnation in the state of 52β. The thickness of the oxide film in the state of FIG. 52B is 0 4 nm, which is consistent with the thickness of the oxide film in the stagnation state observed in FIG. 48. The XPS spectrum in FIG. In the case of a thickness of 0.01 nm or 02 nm, the low peaks visible in the energy range of 101 to 104 eV correspond to the secondary oxide shown in Figure 52, and in the case of an oxide film thickness of more than 0 3 nm2, The peak shown in this energy range is due to Si4 +, so it can be considered that it shows the formation of an oxide film exceeding 1 atomic layer. The phenomenon of stagnant oxide thickness at a film thickness of 0.4 nm is not limited to O: \ 87 \ 87879.DOC -49- UV02 in Fig. 47A and Fig. 47B is free from the jerk-induced 2nd process by the base tick, It should be the same as long as the same thin oxide film formation method can be formed with good fineness. The thickness of the oxide film will continue to increase from the state of Fig. 52B. FIG. 53 shows that a ZrSi04x film and an electrode film having a thickness of 0.4 nm are formed on the oxide film formed by the ultraviolet light radical oxidation process of FIG. 47a and FIG. Fig. 54B), for the obtained laminated structure, the relationship between the obtained thermal oxide film conversion film thickness Teq and the leakage current Ig " However, the current characteristics of Fig. 53 are between the aforementioned electrode film and substrate ' Based on the flat band voltage Vfb, the voltage of wb-uv was measured in the applied state. For comparison, the m-flow characteristics of the thermal oxidation film are also shown in FIG. In addition, the conversion film thickness shown in the figure is about a structure that combines an oxide film and a ZrSiox film. Referring to FIG. 53, when the oxide film is omitted, that is, when the thickness of the oxide film is 0, the leakage current density exceeds the leakage current density of the thermal oxide film, and the thickness of the thermal oxide film is changed to about 1 · 7. A relatively large value of about nm means that if the film thickness of the oxide film is increased from 0 nm to 0.4 nm, the value of the thermal oxide film exchange film thickness Teq starts to decrease. In this state, the oxide film will be between the Shixi substrate and the ZrSiOx film. The physical film thickness should actually increase but the converted film thickness Teq will decrease. This will directly form Zr on the silicon substrate. In the case of 2 films, as shown in FIG. 54A, the diffusion of Zr into a silicon substrate or the diffusion of Si into a ZrSiOx film occurs on a large scale, as shown in the silicon O: \ 87 \ 87879.DOC -50- 200421433 substrate. A thick interface layer is formed between the film and the film. In this regard, as shown in FIG. 2, it is considered that by forming an oxide film having a thickness of G.4 nm therebetween, the formation of such an interface layer can be suppressed. As a result, the converted film thickness is reduced. It follows that the value of the leakage current decreases with the thickness of the oxide film. However, FIG. 54a and FIG. MB show a schematic cross-section of the experimental material thus formed, and show that an oxide film 442 is formed on the Shixi substrate 441, and 2 ^ 丨 0 is formed on the oxide film 442; (film Structure of 443. On the other hand, when the thickness of the foregoing oxide film exceeds 0.4 nm, the value of the film thickness converted by the thermal oxide film will start to increase again. The thickness of the oxide film exceeds the range of "nm, as As the film thickness increases, the value of the leakage current also decreases, and it can be thought that the increase in the converted film thickness is due to the increase in the physical film thickness of the oxide film. Thus, the growth of the oxide film observed in FIG. 48 The stagnant film thickness of 0.4 is the minimum corresponding to the converted film thickness of the system including the oxide film and the high-dielectric film. It can be seen that the stable oxide film shown in Figure 52 (B) can Effectively prevent the diffusion of metal elements such as Zr to the silicon substrate, and even if the thickness of the oxide film is larger, the effect of preventing the diffusion of metal elements will not be much improved. In addition, 'leakage when using an oxide film with a thickness of 0.4 nm is known The value of the current is the thermal oxidation of the corresponding thickness The value of the leakage current is about two digits smaller. By using the insulating film thus structured in the gate insulating film of a MOS transistor, the gate leakage current can be minimized. In addition, the oxide film described in FIG. 48 or 51 As a result of the stagnation phenomenon of the growth of 0.4 nm, even if the oxide film 442 formed on the Shixi substrate 441 as shown in FIG. 55A has unevenness of the original film thickness, the growth of the oxide film is O: \ 87 \ 87879.DOC -51-'Dry, ▲ film thickness increase stagnates in the vicinity of 0.4 mn as shown in Figure 55B. Therefore, by continuing the oxide film growth during the τ lag period, it can be obtained as shown in Figure 55C. The ground is flat and has the same thickness of the oxide film 442. As explained earlier, for very thin oxide films, there is currently no uniform film thickness measurement method. Therefore, the film thickness of the oxide film 442 in FIG. 55C The value may vary depending on the wave and the method. However, for the reasons explained previously, the thickness of the stagnation in the growth of the oxide film is a thick 2 atomic layer. Therefore, again, It is considered that the ideal film thickness of the oxide film 442 is about 2 atomic layers. The ideal thickness is to ensure a thickness of 2 atomic layers in the entire oxide film 442, and a 3 atomic layer thickness region is formed in a part. That is, 'the ideal thickness of the oxide film 442 can be considered to be actually It is in the range of 2 to 3 atomic layers. [Remote plasma radical nitridation treatment] Fig. 56 shows the structure of the remote plasma unit 27 used in the substrate processing apparatus 20. As shown in Fig. 56, the long distance The plasma section 27 is formed in the inside thereof with a gas circulation path 27a, a gas inlet 27b, and a gas outlet 76c connected thereto, typically including a block 27A made of aluminum, and a part of the aforementioned block 27A A ferrite core 27B is formed. A fluorine resin processing 27d is provided on the inner surfaces of the gas circulation path 27a, the gas inlet 27b, and the gas outlet 27c. A high frequency of 400 kHz is supplied from a coil wound around the ferrite core 27B. A plasma 27C is formed in the gas circulation path 27a. With the excitation of plasma 27C, although O: \ 87 \ 87879.DOC -52- 200421433 is formed in the aforementioned gas circulation path 27a, nitrogen radicals and nitrogen ions are present, but nitrogen ions will circulate in the aforementioned gas circulation path 27a ^ The gas disappears, so the above-mentioned gas outlet 2 is mainly released gas free radical N2. In addition, in the configuration of FIG. 56, the ion filter || 27e grounded to the aforementioned gas outlet n27e is provided to remove charged particles such as nitrogen ions, and only nitrogen radicals are supplied to the aforementioned process space 84. In addition, even if the ion filter 27e is not grounded, the structure of the ion filter 27e also functions as a diffusion plate, and can sufficiently remove charged particles such as nitrogen ions. Fig. 57 shows a comparison between the relationship between the number of ions formed by the remote plasma unit 27 and the amount of electron energy and energy 'and the source of the microwave electrode. As shown in Fig. 57, when the plasma is excited by the microwave, nitrogen ionization of the nitrogen molecules is promoted, and a large amount of nitrogen ions are formed. For this reason, when the plasma is excited by the same frequency below 5000 kHz, the number of nitrogen ions formed will be greatly reduced. When plasma treatment is performed by microwave, as shown in FIG. 58, a high vacuum of 1.33x10 ~ i ^ xlC ^ PaGo · 1 ~ i0_4T〇rr) is required. The high-frequency plasma treatment can be 13.3 ~ 13.3. kPa (0.1 ~ 100 Torr) with a relatively high pressure and force. Table 1 below shows the comparison of ionization energy conversion efficiency, possible discharge pressure range, plasma power consumption, and process gas flow between the case where the plasma is excited by microwaves and the case where the plasma is excited by high frequencies. Table 1

Ionization energy change—change efficiency discharge possible pressure range plasma consumption power process gas flow microwave Ⅰ.〇ΟχΙΟ " 2 0.1m ~ 0.1 Torr 1 ～ 500W 0 ～ 100 SCCM South frequency Ⅰ.OOxlO · 7 bl ~ 100Torr 卜 1 ～ 10kW 0.1 ～ 10SLM O: \ 87 \ 87879.DOC -53- 200421433 With reference to Table 1, it can be seen that the ionization energy conversion efficiency is about 1X 1 (about T2, in the case of RF excitation) in the case of microwave excitation. Then it is reduced to about 1X1 (up to Γ7, and the possible discharge pressure is relative to 0.1111 d0 which is microwave excitation): 1: ~ 0.111 〇1 * 1 > (133111? 3 to 13.3? The excitation situation is about 0.1 ~ 100 Torr (13.3 Pa ~ 13.3 kPa). Accordingly, the plasma consumes more power when the RF excitation is greater than the microwave excitation, and the process gas flow is greater when the RF excitation is greater than the microwave excitation. In the substrate processing apparatus 20, the nitridation treatment of the oxide film is performed by using nitrogen radical N / instead of nitrogen ions, so it is desirable that the number of excited nitrogen ions is small. Furthermore, minimization is added to From the perspective of damage to the substrate being processed It is also desirable that the number of excited nitrogen ions is small. In addition, in the substrate processing device 20, the number of excited nitrogen radicals is small, and the thickness under the high-dielectric gate insulating film is very thin, at most about 2 to 3 atomic layers. The underlying oxide film is very suitable for nitriding. Figures 59A and 59B show a side view and a top view, respectively, when radical nitriding of the substrate W to be processed is performed using the substrate processing apparatus 20. As shown in Figures 59A and 59B Since Ar gas and nitrogen gas are supplied to the long-distance plasma unit 27, the plasma is excited by high frequency at a frequency of several hundred kHz to form nitrogen radicals. The formed nitrogen radicals extend along the substrate to be processed. The surface of W flows and is discharged through the exhaust port 74 and the pump 201. As a result, the process space 84 can be set to a free radical nitridation suitable for the substrate w, 3 3 Pa to 13.3 kPa (0.01 to 100). Torr) process pressure. The nitrogen radicals thus formed will nitrate the surface of the substrate W to be processed while flowing along the surface of the substrate W to be processed. O: \ 87 \ 87879.DOC -54- 200421433 Nitriding step in Figure 59A, 59B In the cleaning step before the nitriding step, the valves 48a and 212 are opened, and the pressure in the process space 84 is reduced to a pressure of ~ 丨 33χΐ〇 · 4 ~ by the valve closing operation. The oxygen and moisture in the space 84 will be removed, but in the subsequent nitriding treatment, its valves 48 & and 212 are closed, and the turbo molecular pump 50. is not included in the exhaust path of the process space 84. In this way, by using the substrate processing apparatus 20, a very thin oxide film 'can be formed on the surface of the substrate W to be processed, and the oxide film surface can be further vaporized. FIG. 60A shows the aforementioned oxidation when a long-range plasma unit 27 was used and nitrogen was applied under the conditions shown in Table 2 to form a 2.0 nm-thick oxide film formed by thermal oxidation treatment on a silicon substrate using a substrate processing apparatus 20. The nitrogen concentration distribution in the film, FIG. 60B shows the relationship between the nitrogen concentration distribution and the oxygen concentration distribution in the same oxide film. Table 2

Referring to Table 2, when the substrate nitriding device 20 is used for the RF nitriding treatment, nitrogen is supplied to the processing space 84 at a flow rate of 50 SCCM or Ar at a flow rate of 2 SLM at a pressure of 1 Ton · (l33Pa). The nitriding treatment is performed, but the internal pressure of the process space 84 is temporarily decompressed to about 10-6 Torr (1.33x10 Pa) before the nitriding treatment is started, and the oxygen or water remaining inside is fully removed. Serving. Therefore, in the case of nitriding treatment with the aforementioned pressures:]: in the process space 84, the residual oxygen can be diluted by * Ar or nitrogen, and the residual oxygen concentration, so the thermodynamics of residual oxygen The activity on it has become very small. O: \ 87 \ 87879.DOC -55- 200421433 In this regard, in the nitriding process using a microwave plasma, the processing pressure during the nitriding process is the same as the removal pressure, so it can be considered in an electropolymerized atmosphere. Residual oxygen system has high thermodynamic activity. Referring to FIG. 60A, in the case where the plasma is nitrided by exciting the microwave, the concentration of nitrogen introduced into the oxide film is limited, so it can be seen that the nitriding of the oxide film is not substantially performed. As for this example, when the plasma is nitrided by RF excitation, it can be known that the nitrogen concentration in the oxide film will change linearly with the depth, and it will reach a concentration of nearly 20% near the surface. . Fig. 61 shows the principle of the measurement of Fig. 60A using xps (X-ray spectroscopy). Referring to FIG. 61, a test material for forming an oxide film 412 on a silicon substrate 411 is irradiated obliquely by X-rays at a specific angle, and the excited X-ray spectra are detected by the detectors DEt 1, DET 2 at various angles. At this time, for example, is set to 90. The detector DET1 with a deep detection angle has a short path in the oxide film 412 that excites X-rays. Therefore, the X-ray spectrum detected by the aforementioned detector DET1 contains a lot of information about the lower part of the oxide film 412. _ This 'DET2', which is set to a shallow detection angle, has a long path in the oxide film 412 that excites X-rays, so the detector DET2 mainly detects information near the surface of the oxide film 412. Fig. 60B shows the relationship between the nitrogen concentration and the oxygen concentration in the aforementioned oxide film. However, in Fig. 60B, the oxygen concentration is represented by the intensity of X-rays corresponding to Ois. Referring to FIG. 60B, in the case where the oxide film is nitrided by RF remote plasma as in the present invention, as the nitrogen concentration increases, the oxygen concentration decreases, so O: \ 87 \ 87879.DOC -56- 200421433 It is known that nitrogen atoms replace oxygen atoms in the oxide film. On the other hand, in the case where the oxide film is nitrided by microwave electropolymerization, such a replacement relationship cannot be seen, and a relationship in which the oxygen concentration decreases with the nitrogen concentration cannot be seen. In addition, particularly in FIG. 60B, an increase in oxygen concentration is seen in the case where 5 to 6% of nitrogen is introduced by microwave nitridation, which means that the oxide film increases with nitriding. With the increase of the oxygen concentration of such microwave nitriding, the microwave nitriding is performed in a high vacuum, so it can be considered that the oxygen or water remaining in the processing space is not an Ar gas such as the case of high-frequency long-range plasma nitriding. Dilute with nitrogen gas, but because of high activity in the atmosphere. FIG. 62 shows the formation of an oxide film with a thickness of 4A (0.4 nm) and 7 persons (0.7 nm) on the substrate processing apparatus 20, and nitrided from FIG. 59A and FIG. 59B using the aforementioned long-range plasma unit 27. In the step, the relationship between the nitriding time during the nitriding and the nitrogen concentration in the film. Fig. 63 shows the segregation of nitrogen on the oxide film surface with the nitrogen treatment in Fig. 62. In addition, Fig. 62 and Fig. 63 also show the case where the oxide film is formed to a thickness of 5A (0.5 nm) 47A (〇7 ηπ) by a rapid thermal oxidation treatment. Referring to FIG. 62, the nitrogen concentration in the film is that any oxide film will rise together with the nitriding treatment time, but it is particularly thick with a thickness of 0.44 m corresponding to the 2-atomic layer formed by ultraviolet light radical oxidation. In the case of an oxide film or a thermal oxide film having a film thickness close to 0.5 nm, the nitrogen concentration in the film becomes higher because the oxide film is thinner under the same film formation conditions. Fig. 63 shows that the detector D] ET1 & DET2 is set to 30 in Fig. 61, respectively. And the nitrogen concentration detected at a detection angle of 90. It can be seen from FIG. 63 that the vertical axis of FIG. 63 is 90. Scatter angle

O: \ 87 \ 87879.DOC «57- 200421433 The value of the intensity of the X-ray spectrum from the nitrogen atom of the membrane royal body, divided. The test is then obtained from the X-ray spectral intensity of nitrogen atoms segregated on the surface of the film, and this is used to define the nitrogen segregation rate. In the case where the value is i or more, segregation of nitrogen on the surface occurs. Referring to FIG. 63, in the case where the thickness of the oxide film is formed to 7A by the ultraviolet light-excited oxygen radical treatment, the nitrogen segregation rate becomes 丨 or more, and the nitrogen atom segregates on the initial surface, which can be considered as The state of the oxynitride film 12 is eight. In addition, it can be seen that the distribution in the film after the nitriding treatment for 90 seconds was almost the same. It can be seen from X that even in other films, the nitriding treatment at 90 seconds can make the distribution of nitrogen atoms in the film substantially the same. In the experiment shown in FIG. 64, the substrate processing apparatus 20 repeatedly performs the aforementioned ultraviolet light radical oxidation treatment and long-range plasma nitridation treatment on 10 wafers (Crystal Circle # 1 to Wafer # 10). Fig. 64 shows the variation in thickness of each wafer of the oxynitride film thus obtained. However, the result of FIG. 64 is about forming an oxide film having an oxide film thickness of 0.4 nm obtained by xps measurement when the substrate processing apparatus 20 drives the ultraviolet light sources 86 and 87 to perform ultraviolet radical oxidation treatment. The oxide film formed in this way is converted into a case of an oxynitride film containing about 4% nitrogen atoms by driving the aforementioned long-distance plasma unit 27 to perform a nitriding treatment. Referring to Fig. 64 ', the vertical axis shows the film thickness obtained by ellipsoidal symmetry of the oxynitride film thus obtained, but it can be seen from Fig. 64 that the obtained film thickness is approximately stabilized at 8A (0.8 nm). FIG. 65 shows the formation of O: \ 87 \ 87879.DOC -58- 200421433 with a film thickness of G4 nm on a substrate of Shi Xi by a radical oxidation treatment using an ultraviolet light source 86, 87 by using a substrate processing apparatus 20. In the case where the film is nitrided by the remote plasma unit 27 after the film, the result of the investigation that the film thickness due to nitridation is increased is obtained. Referring to FIG. 65, it can be seen that the oxide film having a film thickness of about 038 (before the nitriding treatment) is initially increased to 0 when nitrogen atoms of 4 to 7% are introduced during the nitriding treatment. Up to 5 nm. On the other hand, when nitrogen atoms are introduced during the nitridation process, the film thickness is increased to approximately L3 nm. In this case, the introduced nitrogen atoms may penetrate into the silicon substrate through the oxide film to form nitrogen. Chemical film. In Fig. 65, the relationship between the nitrogen concentration and the film thickness in the ideal model structure for the introduction of only one layer of nitrogen into the oxide film with a thickness of 0.4 nm is shown with ▲. Referring to FIG. 65, in this ideal model structure, the film thickness after the introduction of nitrogen atoms becomes about 0.5 nm, and the film thickness in this case increases by about 0.1 nm, and the nitrogen concentration is about 12%. Based on this model, it is concluded that when nitriding the oxide film by the substrate processing device 20, it is desirable that the film thickness be increased to suppress the same degree of 0.1 to 0.2 nm. In addition, the maximum amount of nitrogen atoms taken into the film at this time can be estimated to be about 12%. In addition, in the above description, an example of using a substrate processing apparatus 20 and forming a very thin base oxide film was described, but the present invention is not limited to such a specific embodiment, and can also be applied to a silicon substrate or silicon On the layer, a high-quality oxide film, nitride film, or oxynitride film having a desired film thickness is formed. The above 'illustrates the present invention with preferred embodiments, but the present invention is not limited to the specific embodiments described above, and various changes and modifications can be made within the spirit of the scope of patent application. O: \ 87 \ 87879.DOC -59- 200421433 [Brief Description of the Drawings] Fig. 1 shows a semiconductor device including a high-dielectric gate insulating film. Fig. 2 shows a front view of an embodiment of a substrate processing device of the present invention. Fig. 3 is a side view showing the structure of an embodiment of a substrate processing apparatus of the present invention. Fig. 4 is a cross-sectional view taken along line A-A in Fig. 2. FIG. 5 is a front view showing the configuration of a machine disposed below the processing container 22. FIG. 6 is a plan view showing the structure of a machine disposed below the processing container 22. FIG. 7 is a side view showing the configuration of a machine disposed below the processing container 22. FIG. 8A is a plan view showing the configuration of the exhaust path 32. FIG. FIG. 8B is a front view showing the configuration of the exhaust path 32. FIG. Fig. 8C is a longitudinal sectional view taken along line B-B. Fig. 9 is an enlarged longitudinal sectional view of the processing container 22 and its peripheral devices. Fig. 10 is a plan view of the inside of the processing container 22 with the lid member 82 removed from above. FIG. 9 is a plan view of the processing container 22. FIG. 12 is a front view of the processing container 22. FIG. 13 is a bottom view of the processing container 22. Fig. 14 is a longitudinal sectional view taken along the line C-C in Fig. 12. FIG. 15 is a right side view of the processing container 22. FIG. 16 is a left side view of the processing container u. O: \ 87 \ 87879.DOC • 60- 200421433 Fig. 17 is a longitudinal sectional view showing the installation structure of the ultraviolet light sources 86 and 87 in an enlarged manner. FIG. 18 is a longitudinal sectional view showing an enlarged configuration of the gas injection nozzle portion 93. FIG. FIG. 19 is a cross-sectional view showing the structure of the gas injection nozzle section 93 in an enlarged manner. FIG. 20 is an enlarged front view showing the configuration of the gas injection nozzle portion 93. FIG. 21 is a longitudinal sectional view showing the structure of the heating section 24 in an enlarged manner. FIG. 22 is an enlarged bottom view of the heating unit 24. Fig. 23 is a longitudinal sectional view showing the mounting structure of the second inflow port 170 and the second outflow port 174 in an enlarged manner. _ FIG. 24 is a longitudinal sectional view showing the mounting structure of the flange 14 in an enlarged manner. Fig. 25 is a longitudinal sectional view showing the mounting structure of the upper end portion of the clamp mechanism 19 in an enlarged manner. FIG. 26 is a diagram showing the configuration of a control system of the siC heater 114 and the SiC heater 114. FIG. FIG. 27A is a plan view showing the configuration of the quartz bell cover 112. FIG. Fig. 27B is a longitudinal sectional view showing the structure of the quartz bell cover 112. FIG. 28A is a perspective view of the structure of the quartz bell cover 112 seen from above. FIG. 28B is a perspective view of the structure of the quartz bell cover 112 seen from below. Fig. 29 is a system diagram showing the structure of an exhaust system of a pressure reduction system. Fig. 30A is a plan view showing the configuration of the holding member 12o. FIG. 30B is a side view showing the configuration of the holding member 12o. FIG. 31 is a longitudinal sectional view showing the configuration of the rotation driving section 28 disposed below the heating section 24. As shown in FIG. Fig. 32 is a longitudinal sectional view showing an enlarged "rotation drive unit".

O: \ 87 \ 87879.DOC -61-200421433 Fig. 33A is a cross-sectional view showing the structure of the bracket cooling mechanism 234. Fig. 33B is a side view showing the structure of the bracket cooling mechanism 234. FIG. 34 is a cross-sectional view showing the configuration of the rotation position detecting mechanism 232. FIG. 35A is a diagram showing a non-detection state of the rotational position detecting mechanism 232. FIG. 35B is a diagram showing a detection state of the rotation position detecting mechanism 232. Fig. 36A is a waveform diagram showing an output signal S of the light receiving element 268 of the rotation position detecting mechanism 232. 3B are waveform diagrams of the pulse signal P output from the rotation position determination circuit 270. FIG. Fig. 37 is a flowchart illustrating a rotational position control process performed by the control circuit. Figure 38 is a cross-sectional view of the installation location of the windows 75, 76 seen from above. Figure 39 is a cross-sectional view of the enlarged display window 75. Fig. 40 is a cross-sectional view of the enlarged display window 76. FIG. 41A is a plan view showing the structure of the lower case 102. FIG. FIG. 41B is a side view showing the structure of the lower case 102. FIG. FIG. 42A is a plan view showing the configuration of the side box body 104. FIG. FIG. 42B is a front view showing the structure of the side box body 104. FIG. FIG. 42C is a rear view showing the configuration of the side box body 104. FIG. FIG. 42D is a left side view showing the structure of the side box 104. FIG. 42E is a right side view showing the structure of the side box 104. FIG. FIG. 43A is a bottom view showing the structure of the upper case 106. FIG. FIG. 43B is a side view showing the structure of the upper case 106. FIG. FIG. 44A is a plan view showing the configuration of the cylindrical case 108. FIG. O: \ 87 \ 87879.DOC -62- 200421433 Fig. 44B is a side longitudinal sectional view showing the configuration of the cylindrical box body 108. Fig. 44C is a side view showing the structure of the cylindrical case 108. FIG. 45 is a longitudinal sectional view showing the lift lever mechanism 30 in an enlarged manner. The figure is an enlarged longitudinal sectional view showing a sealing structure of the lift lever mechanism 30. FIG. 47A is a side view and a plan view showing a situation where radical oxidation of the substrate to be processed and the plate W is performed using the substrate processing apparatus 20 of FIG. 2. The figure key is a plan view showing the structure of FIG. 47A. Fig. 48 is a diagram showing the substrate oxidation processing steps performed using the substrate processing apparatus 20. Fig. 49 is a diagram showing a method for measuring the film thickness of xps used in accordance with the present invention. Fig. 50 is another diagram showing a method for measuring the film thickness of xps used in accordance with the present invention. Fig. 51 is a diagram schematically showing a stagnation phenomenon of the oxide film thickness growth observed when the oxide film is formed by the substrate processing apparatus 20. FIG. 52A is a diagram showing an oxide film formation process 1 on the surface of a silicon substrate. 52 FIG. 52B is a diagram showing an oxide film forming process 2 on the surface of a silicon substrate. Fig. 53 is a graph showing the leakage current characteristics of the obtained oxide film in the first embodiment of the present invention. -Figure 54A is a diagram explaining the cause of the leakage current characteristic of Figure 53. FIG. 54B is a diagram explaining the cause of the leakage current characteristic of FIG. 53. Fig. 55A is a view showing the oxide film forming step 1 generated in the substrate processing apparatus 20. FIG. 55B is a diagram showing step 2 of the oxide film formation step O: \ 87 \ 87879.DOC -63- 200421433 generated in the substrate processing apparatus 20. Fig. 55C is a view showing the oxide film forming step 3 generated in the substrate processing apparatus 20. Fig. 56 is a diagram showing the composition of a remote plasma source used in the substrate processing apparatus 20. Figure 57 is a graph comparing the characteristics of RF long-range plasma and microwave plasma. Fig. 58 is another graph comparing the characteristics of RF long-range plasma and microwave plasma. Fig. 59A is a side view showing the nitriding treatment of the oxide film using the s-plate processing apparatus 20. FIG. 28 is a plan view showing the nitriding treatment of the oxide film using the substrate processing apparatus 2G. FIG. 60A shows the use of a long-range plasma unit 27 under the conditions shown in Table 2 on a 2.0⑽ thick emulsified film formed by a thermo-oxidation process on a burrowing substrate ^ processing device ⑼ on a broken substrate, when nitriding. The nitrogen concentration profile in the aforementioned oxide film. The figure just shows the relationship between the nitrogen concentration distribution and the oxygen concentration distribution in the same oxide film. Fig. 61 is a schematic diagram showing an XPS used in the present invention. The series 2 and 2 show the relationship between the nitriding time of the plasma plasma and the disorder / occurrence in the film. The relationship between the nitriding time and the nitrogen distribution inside the film is shown in Fig. 0 ~ A ~ A chapter of the arduous process of the film. Fig. 65 is a diagram showing the effect of nitriding treatment on the oxide film of this embodiment.

O: \ 87 \ 87879.DOC -64- 200421433 [Illustration of Symbols] 10 semiconductor device 11 Si substrate 12 base oxide film 12 A oxynitride film 13 high dielectric film 14 interrogator electrode 20 substrate processing device 22 processing container 22a front 22b rear 22c bottom 22d left side 22e right side Surface 22g supply port 24 heating section 26 ultraviolet irradiation section 26a housing 26b bottom opening 26c edge section 27 remote plasma section 27a gas circulation path 27b gas inlet 128 motor 128a drive shaft 130 magnet coupling 132 lift arm 134 lift shaft 136 drive Parts 138a ~ 138c abutment pin 140 flange 142 center hole 144 first water passage 146 first flange 146a L-shaped communication hole 146b stepped portion 148 second flange 150 second water passage 152 first inflow pipe 154 first Inflow inlet 156 Outflow pipe 158 First outlet 160 Bolt 162 Mounting hole 164 Temperature sensor O: \ 87 \ 87879.DOC -65- 200421433 27c Gas outlet 27d Fluoro resin processing 27e Ion filter 27A Block 27B Ferrite Body core 27C Plasma 28 Rotary drive unit 30 Lifting rod mechanism 32 Exhaust path 32a Opening portion 32b Conical portion 32c Bottom 32d Main exhaust pipe 32e Discharge outlet 32f Lower 32g Diversion discharge outlet 34 Body supply section 36 frame 38 bottom frame 40, 41 vertical frame 40a cable duct 41a exhaust duct 42 middle frame 44 upper frame 166a to 166f terminal for power cable connection 170 second inlet 174 second outlet 176 plug 178 position Decision hole 180 seal member (0 ring) 182 seal member (0 ring) 184 seal member (0 ring) 186 seal member (0 ring) 188 seal member (0 ring) 190 clamp mechanism 190a outer cylinder 190b shaft 192 coil spring 193 Nut 195 Gasket 196 Heating control circuit 197, 199 L-shaped gasket 197a, 199a Cylindrical part 197b, 199b Protruded part 197c, 197d Cylindrical part 198 Temperature regulator 200 Power supply 201 Pump O: \ 87 \ 87879.DOC- 66-200421433 46 Cooling water supply unit 48a, 48b Exhaust valve for solenoid valve 50 Turbo molecular pump 50a Discharge pipe 51 Vacuum line 51a Divert line 52 Power supply unit 57 UV lamp controller 58 Gas line 60 Emergency stop switch 62 Bracket 64 temperature regulator 66 gas box 68 ion measurement controller 70 APC controller 72 TMP controller 74 exhaust port 75 first window 76 second window 77 sensor unit 80 chamber 80a through hole 82 cover member 84 process space ( Processing space) 202 Exhaust line 204 exhaust line 205 pressure gauge 206 valve 208 branch line 210 valve 211 variable diaphragm 212 valve 214 pressure gauge 216 turbine line 218 check valve 220 diaphragm 222 valve 230 bracket 230a water circuit for cooling water 230b cooling water supply hole 230c cooling water supply discharge hole 230d central hole 230e, 230f through hole 232 rotation position detection mechanism 234 bracket cooling mechanism 236, 237 ceramic bearing 238 flange 240 bolt O: \ 87 \ 87879.DOC -67- 200421433 85 Sensor unit 85a ~ 85c Pressure gauge 86, 87 Outside light source (ultraviolet light source) 88 Transparent window 88a Sealing surface 88b Protective cover 89 Sealing member (0 ring) 90 Supply line 91 Locking member 92 Supply port 93 Gas injection nozzle Part 93al ~ 93an Injection port 93bl ~ 93b3 Nozzle plate 93cl ~ 93c3 Concave part 93dl ~ 93d3 Supply hole 94 Transfer port 96 Gate valve 97a 1st quality controller 97b 2nd quality controller 98 Transportation robot 991 ~ 995 Gas supply line 100 Quartz washer 102 Lower case 104 Side case 242 Flange 244 Partition wall 246 Exhaust hole 248 Driven side magnet 250 Magnet cover 252 Atmosphere side rotation part 252a Lower end part 254, 255 Bearing 256 Drive side magnet 257 transmission member 258 rotation detection unit 260,261 slit plate 262, 263 photointerrupter 264 bearing frame 266 light emitting element 268 light receiving element 268 light receiving element 270 rotation position determination circuit 272 transparent quartz 274 UV glass 276 window mounting portion 277 small screw 278 1 Window frame 280 sealing member O: \ 87 \ 87879.DOC -68- 200421433 104a Front side 282 Second window frame 104b Back side 284 Small screw 106 Upper case 286 Opening 108 Cylindrical case 292 Transparent quartz 108a ~ 108c Recess 294 UV glass 108d protrusion 296 window mounting portion 110 base 297 small screw 112 quartz bell cover 298 first window frame 112a protruding portion 300 sealing member (0 ring) 112b cylindrical portion 302 second window frame 112c top plate 304 small screw 112d hollow portion 310 circle Shaped opening 112e beam portion 310a ~ 310c recessed portion 112f through hole 310d recessed portion 112g ~ 112i hub 312 opening (rectangular) 113 internal space 314a, 314b protrusion 114 SiC heater 3151 stepped portion 114a first heating portion 316 slit 114b, 114c The second and third heating parts 317 opening 114d through hole 318 recessed 114e through hole 319 round hole 116 heat reflecting member ( Reflector) 320 ~ 322 holes 116a Through holes 324, 325 Rectangular openings 118 SiC substrate setting table (heating member) 326 Stepped portion O: \ 87 \ 87879.DOC -69- 200421433 119 Pyrometer 120 holding member 120a ~ 120c Arm 120d holding member 120e ~ 120g hub 120i chamfering processing part 122 housing 124 internal space 126 ceramic shaft 327 ~ 329 round hole 330 square hole 332 telescopic tube 334 bolt 336 connection member 338 ceramic cover 340 cover member 411 silicon substrate 412 oxidation Film 441 Silicon substrate 442 Oxide film 443 ZrSiOx O: \ 87 \ 87879.DOC -70-

Claims (1)

200421433 Patent application park: A substrate processing device, which is equipped with a processing container with a processing space internally divided, a heating unit inserted at the temperature of the processing space, and a broken processing substrate heated to a specific temperature. The holding mechanism of the substrate on the heating unit above the heating part of the previous part is rotated to drive the driving means before passing through the heating part,? The car of the medical axis is from one side of the aforementioned processing container, and is scattered toward the right stone. A musical note is held on the other substrate to be processed, and a gas injection part for spraying gas is provided on the other side of the aforementioned processing container. Exhaust the gas exhaust port passing through the substrate to be processed. twenty three. For example, the substrate processing apparatus of the scope of application for a patent, wherein the above-mentioned gas ejection sections are arranged in a row in a horizontal direction and a plurality of gas ejection ports are arranged. For example, the substrate processing apparatus according to item 2 of the patent application, wherein a plurality of gas injection ports opening to the processing space are provided on a surface of the processing container. 4. The substrate processing apparatus according to item 2 of the scope of patent application, wherein the gas injection unit is provided on a wall surface of the processing container, and a nozzle member having a plurality of gas injection ports is provided. 5. The substrate processing apparatus according to item 4 of the scope of patent application, wherein the aforementioned nozzle member is provided on the wall surface of the processing container, so that the gas is sprayed from the outer space of the substrate to be processed as described in O: \ 87 \ 87879.DOC 200421433. The side faces the upper part of the substrate to be processed. 6 The substrate processing device as described in the first patent scope, wherein the gas injection section is connected to a plurality of gas supply lines that individually supply different types of gas. 7. The substrate processing apparatus according to item 6 of the scope of patent application, wherein the plurality of gas supply lines are each a gas whose specific flow is controlled by a mass flow controller to stabilize the supply flow. 8. The substrate processing apparatus according to item 2 of the scope of the patent application, wherein the plurality of gas injection ports are connected to a plurality of gas supply lines that individually supply different kinds of gases. 9. The substrate processing apparatus according to item 8 in the scope of the patent application, wherein the plurality of gas supply lines are gasses with a specific flow rate controlled by a mass flow controller. 10. The substrate processing apparatus according to item 1 of the scope of patent application, wherein the exhaust port described above is formed in a rectangular shape wider than the width of the substrate to be processed. 11. The substrate processing apparatus according to item 丨 of the patent application scope, wherein the exhaust port is connected to an exhaust path extending below the bottom of the other side of the processing container. O: \ 87 \ 87879.DOC