TWI230401B - Substrate processing equipment - Google Patents

Substrate processing equipment Download PDF

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Publication number
TWI230401B
TWI230401B TW092126228A TW92126228A TWI230401B TW I230401 B TWI230401 B TW I230401B TW 092126228 A TW092126228 A TW 092126228A TW 92126228 A TW92126228 A TW 92126228A TW I230401 B TWI230401 B TW I230401B
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Taiwan
Prior art keywords
substrate
oxide film
processed
substrate processing
film
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TW092126228A
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Chinese (zh)
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TW200421434A (en
Inventor
Takahiro Horiguchi
Ryo Kuwajima
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Formation Of Insulating Films (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The purpose of the present invention is to provide substrate-processing apparatus that is capable of depositing a film stably and efficiently on a substrate W. By rotating a holding member that supports the substrate W at a position to make it confront a heater unit and holds the substrate W, uniform temperature distribution throughout the substrate W is maintained so as to restrain the substrate W from warping. In addition, the arm portions of the holding member are formed of transparent quartz; or, the shaft of the holding member is formed of opaque quartz; or, the shaft of the holding member is supported by a ceramic bearing in a rotatable manner so that the substrate can be protected from metal contamination. Furthermore, the rotation position of the shaft of the holding member is detected so as to prevent the rotation position of the arms from interfering with a robot hand and a lifter mechanism that transfer the substrate W.

Description

1230401 玫、發明說明·· 【發明所屬之技術領域】 特別是關於對基板施以成 本發明係有關基板處理裝置 膜等處理之基板處理裝置。 【先前技術】 的=日的超高速半導體裝置中’隨著微小化製程之進步 日:，^喊下之閘極長逐漸成為可能。-般隨著微小 ^问時、，，半導體裝置之動作速度亦提高，但於如此相當 =化之半導體裝置中，隨著微小化使閘極長之縮短，有 要使閘極絕㈣之膜厚按照比例原則減少。 」旦閑極長-旦成為〇.—以下，閑極絕緣膜之厚度於如目 月j使用熱乳化膜之時，亦必須設定為卜2聰或以下，但在如 此極薄之問極絕緣膜中，會增大通道電流，其 回避閑極漏電流增大之問題。 因為如此之情況’自以往即提案比電容率係較熱氧化膜 甚f，因此對於閘極絕緣膜適用f際膜厚雖A，但換算成1230401 Description of the invention ... [Technical field to which the invention belongs] In particular, the present invention relates to a substrate processing apparatus for processing a substrate, such as a film, on a substrate. [Prior art] In the ultra-high-speed semiconductor device of the day, as the miniaturization process progresses, the gate length of the gate is gradually becoming possible. -Generally, with the minute, the operating speed of the semiconductor device also increases, but in such a comparable semiconductor device, the gate length is shortened with the miniaturization. Thickness is reduced according to the principle of proportionality. Once the pole is extremely long-once it becomes 0.-or less, the thickness of the pole insulation film must be set to 2 or less when using a thermal emulsified film, but in such a very thin question insulation In the film, the channel current is increased, which avoids the problem of an increase in the leakage current of the idler. Because of this situation ’, it has been proposed that the thermal oxide film is much more f than the permittivity system. Therefore, for gate insulation films, the thickness of the film is A, but converted to

熱氧化膜時膜厚^ Το ΓΛ -U A 之丁 a2〇5 或 A12〇3、Zr02、Hf02，此外如 2〇4或HfSiQ4等之高電介質材料。藉由使用如此之高電 "貝材料，一旦閘極長為0·1 _以下，則儘管是在非常短之 超高速半導體裝置，亦可使用10麵左右之物理上的膜厚之 間極絕緣膜’並可控制通道效果所造成之間極漏電流。 例如以在所知之1^205膜，係可藉由CVD法將丁a(〇c2H5)5 …、2二為乳相原料而形成。典型之場合為，CVD製程係在 減壓¥ ^下，約48G°C、或在其以上之溫度來實行。如此形Film thickness when thermally oxidizing film ^ ΤΛ ΓΛ-U A of D2a5 or A1203, Zr02, Hf02, and other high dielectric materials such as 204 or HfSiQ4. By using such a high-voltage material, once the gate length is 0 · 1 _ or less, even if it is a very short ultra-high-speed semiconductor device, a physical film thickness of about 10 sides can be used. Insulation film 'can control the leakage current caused by the channel effect. For example, the 1 ^ 205 film is known, which can be formed by using CVD method to use a (0c2H5) 5, 2 and 2 as milk phase raw materials. Typically, the CVD process is carried out under a reduced pressure of ^^, about 48G ° C, or above. So shaped

O:\87\87876.DOC -7 - 1230401 -- 成之Ta2〇5膜，進一步在氧氣氛圍中被熱處理，結果，解除 了膜中氧欠缺的情形，而膜本身亦結晶化。如此結晶化之 Ta2〇5膜，顯示出了大的比電容率。 由提昇通道區域中之載波電流移動性之觀點，可在高電 ;丨貝閘極氧化膜及矽基板間，隔著丄以下，較佳為〇·8聰 以下厚度之極薄的基底氧化膜。基底氧化膜必須為非常 溥，其厚度若厚，則與在閘極絕緣膜使用高電介質膜之效 果相抵消。另一方面，如此非常薄的基底氧化膜，必須一 致地覆盍住矽基板表面，且須要求不會形成界面位準等之 缺陷。 自以往起，薄閘極氧化膜一般係藉由矽基板之急速熱氧 化（RTO)處理（例如，參照專利文獻丨）所形成，但若想形成 期望之lnm以下厚度之熱氧化膜，則必須降低膜形成時之處 理溫度。但是，以如此低溫所形成之熱氧化膜，容易含有 界面位準等之缺陷，不適合作為高電介質閘極氧化膜之基 底氧化膜。 參照圖1，半導體裝置10係形成於矽基板11上，而於矽基 板11上，隔著基底氧化膜12形成有Ta2〇5、Ai2〇3、、O: \ 87 \ 87876.DOC -7-1230401-The finished Ta205 film was further heat-treated in an oxygen atmosphere. As a result, the lack of oxygen in the film was eliminated, and the film itself crystallized. The Ta205 film thus crystallized showed a large specific permittivity. From the viewpoint of improving the carrier current mobility in the channel region, it can be used in high power; 丨 thin gate oxide film and silicon substrate, with a very thin base oxide film with a thickness of 丄 or less, preferably 0.8 or less . The base oxide film must be very thick. If it is thick, the effect of using a high dielectric film for the gate insulating film is offset. On the other hand, such a very thin base oxide film must cover the surface of the silicon substrate uniformly, and it must be required that defects such as interface levels are not formed. From the past, thin gate oxide films are generally formed by rapid thermal oxidation (RTO) processing of silicon substrates (for example, refer to Patent Documents 丨), but if you want to form a thermal oxide film with a thickness of less than 1 nm, you must Reduce the processing temperature during film formation. However, a thermal oxide film formed at such a low temperature tends to contain defects such as interface levels, and is not suitable as a base oxide film for a high-dielectric gate oxide film. Referring to FIG. 1, a semiconductor device 10 is formed on a silicon substrate 11, and Ta205, Ai203, and the like are formed on the silicon substrate 11 via a base oxide film 12.

Hf〇2、ZrSi〇4、HfSi〇4等之高電介質閘極氧化膜i3，此2外 於前述高電介質閘極氧化膜13上形成有閘極電極14。 於圖1之半導體裝置10中，於前述基底氧化膜層12之表面 部份，在保持矽基板11與基底氧化膜i 2間之界面平坦性之 範圍，參雜氮（N)而形成氧氮化膜12A。藉由於基底氧化膜 12中形成比電容率較矽氧化膜大之氧氮化膜12八，可更加減The high-dielectric gate oxide film i3 such as Hf02, ZrSi04, HfSi04, etc., has a gate electrode 14 formed on the high-dielectric gate oxide film 13 described above. In the semiconductor device 10 of FIG. 1, nitrogen (N) is formed in the surface portion of the aforementioned base oxide film layer 12 to maintain the flatness of the interface between the silicon substrate 11 and the base oxide film i 2 to form oxygen nitrogen.化 膜 12A. By forming an oxynitride film 12 which has a larger specific permittivity than the silicon oxide film in the base oxide film 12, it is possible to further reduce

O:\87\87876.DOC 1230401 少基底氧化膜12之熱氧化膜換算膜厚。 如先丽所說明，有關高速半導體裝置10中，前述基底& 化膜12之較佳厚度為儘可能地薄。 土氏氧 但為了均勻地且安定地形成i 以下，例如〇·8·以下， 進而對應2〜3原子層之0·4·左右之厚度之基底氧化膜I 較以往更來得困難。 另外，為實現於基底氧化膜12上所形成之高電介質問極 絕緣膜i3之機能，係藉由熱處理以結晶化所堆積之高電介 質膜13,且必須進行缺氧補償，但對於高電介質膜13進行 如此之熱處理時，因基底氧化膜12之膜厚會增大，故“ 2用高電介質閘極絕緣膜13減少問極絕緣膜之實際膜厚， 實質上即相互抵鎖了。 隨著如此熱處理之基底氧化膜12之膜 石夕基板u與基底氧靡之界面，氧原子切原；= 擴散，與隨著此之石圭酸鹽過渡層的形成，或者因氧對石夕基 板中的侵入而使基底氧化膜12成長之可能性。隨著如此^ 底氧化膜12之熱處理而來之膜厚增大問題，特別是基絲 化膜之膜厚，在作為基底氧化膜時希望能減低至期望數 之原子層以下膜厚之時，會成為非常迫切之問題。 特許文獻1特開平5-47687號公報 【發明内容】 本發明係以提供解決上述課題之新穎且有用之基板處理 裝置為目的。 本發明更詳細之目的係在於提供—種基板處理裝置，可O: \ 87 \ 87876.DOC 1230401 Less thermal oxide film conversion film thickness of base oxide film 12. As explained by Xianli, in the high-speed semiconductor device 10, the preferable thickness of the substrate & chemical film 12 is as thin as possible. Dow oxygen. In order to form uniformly and stably i or less, for example, 0.8 or less, and a base oxide film I corresponding to a thickness of about 0.4 to about 2 to 3 atomic layers is more difficult than in the past. In addition, in order to realize the function of the high-dielectric interlayer insulating film i3 formed on the base oxide film 12, the stacked high-dielectric film 13 is crystallized by heat treatment and must be compensated for lack of oxygen. When the film 13 is subjected to such a heat treatment, the film thickness of the base oxide film 12 will increase. Therefore, "2 using a high-dielectric gate insulating film 13 to reduce the actual film thickness of the interlayer insulating film will substantially block each other. With the heat treatment of the base oxide film 12, the interface between the substrate and the substrate oxygen substrate, the oxygen atoms are cut to the original; = diffusion, and the formation of the transition layer of the silicate salt with this, or due to the oxygen on the substrate The possibility of the intrusion of the base oxide film 12 to grow. With the increase of the thickness of the base oxide film 12 as a result of this heat treatment, especially the thickness of the base silk film, it is hoped that it can be used as a base oxide film. When the film thickness is reduced to a desired number of atomic layers or less, it becomes a very urgent problem. Patent Document 1 Japanese Patent Application Laid-Open No. 5-47687 [Summary of the Invention] The present invention is to provide a novel and useful substrate treatment that solves the above-mentioned problems. The device is for the purpose. A more detailed object of the present invention is to provide a substrate processing apparatus which can

O:\87\87876.DOC 1230401 於石夕基板表面’安线形成非常薄且典型為2〜3原子層分之 厚度之氧化膜，進而將其氮化並形成氧氮化膜。 此外，本發明更詳細之目的係在於提供_種包含基板處 理裝置之叢集型基板處理系統，可於石夕基板表面，安定地 形成非常薄且典型為2〜3原子層分之厚度之氧化膜，進而使 其安定地氮化。 此外，本發明之其他課題之目的，係在於提供_種基板 處理裝置’可解決如上述之課題，構成為可謀求氧化膜之 均一性、產量之改善與污染的防止。 本發明為達成上述目的具有如以下之特徵。 根據本發明’藉由支持位於與加熱部相對位置之被處理 基板，並使保持被處理基板之保持構件旋轉，而可均一地 保持被處理基板之溫度分佈，抑制被處理基板之彎翹，安 定且有效率地進行被處理基板之成膜處理。 a另外’根據本發明，藉由以透明石英形成保持構件之臂 邛，或由不透明石英形成軸，或以陶瓷製之軸承可旋轉地 支持保持構件之軸，故可防止因金屬之污染。 另外，根據本發明，檢測保持構件軸之旋轉位置，可防 止支持被處理基板之複數個臂部之旋轉位置，與進行被處 理基板的搬送之搬送手段與昇降被處理基板之升降桿機構 的干涉。 【實施方式】 以下圖式說明有關本發明之實施形態。 圖2係顯示本發明之基板處理裝置之一實施例構成之前O: \ 87 \ 87876.DOC 1230401 An extremely thin oxide film, typically 2 to 3 atomic layers thick, is formed on the surface of the Shixi substrate, and then it is nitrided to form an oxynitride film. In addition, a more detailed object of the present invention is to provide a cluster substrate processing system including a substrate processing device, which can stably form a very thin oxide film with a thickness of typically 2 to 3 atomic layers on the surface of the Shixi substrate. , And then make it stable nitriding. In addition, another object of the present invention is to provide a substrate processing apparatus that can solve the problems described above, and is structured to achieve uniformity of an oxide film, improvement in yield, and prevention of contamination. To achieve the above object, the present invention has the following features. According to the present invention, by supporting the processed substrate located at a position opposite to the heating portion and rotating the holding member holding the processed substrate, the temperature distribution of the processed substrate can be uniformly maintained, and warpage and stability of the processed substrate can be suppressed. And the film-forming process of a to-be-processed substrate is performed efficiently. a In addition, according to the present invention, since the arm 保持 of the holding member is formed of transparent quartz, or the shaft is formed of opaque quartz, or the shaft of the holding member is rotatably supported by a ceramic bearing, it is possible to prevent contamination by metal. In addition, according to the present invention, detecting the rotation position of the axis of the holding member can prevent interference between the rotation positions of the plurality of arms supporting the substrate to be processed, and the conveyance means for carrying the substrate to be processed and the lifting rod mechanism for lifting and lowering the substrate to be processed. . [Embodiment] The following drawings explain embodiments of the present invention. FIG. 2 shows the structure of an embodiment of a substrate processing apparatus according to the present invention.

O:\87\87876.DOC 1230401 視圖。圖3係顯示本發明之基板處理裝置之—實施例構成之 側視圖。.圖4為沿著圖2中A-A線之橫剖面圖。 如圖2至請示，基板處理裝置2〇如後述，係構成為可 連續進行石夕基板之紫外光自由基氧化處理，與使用如此的 紫外光自由基氧化處理所形成之氧化膜之高頻遠㈣Μ 之自由基氮化處理。 基板處理裝置2G之主要料，係包含：内部劃分成處理 空間之處理容器22、於特定溫度加熱被插入於處理容心 内部之被處理基板(石夕基板)之加熱部24、被搭載於處理容器 22上部之紫外線照射部26、供給氮自由基之遠距離電漿部 27、令被處理基板旋轉之旋轉驅動部28、使被插人處理空 間之被處理基板昇降之升降桿機構3〇、為減壓處理容器η 内部之排氣路徑32,及為供給氣體（氮氣、氧氣等之製程氣 體）於處理容器22内部之氣體供給部34。 另外，基板處理裝置20係具有為支持上述各主要構成部 之框36。框36為立體地組合鐵架者，由被置放於地面之台 狀之底部框38、由底部框38之後部而被豎立成垂直方2 垂直框40、41 ’由垂直框40之中間部起延伸於水平方向而 被橫向架設之中間框42，及由垂直框4〇、41之上端部橫向 架設於水平方向之上部框44所構成。 於底部框38搭載有冷卻水供給部46、包含電磁闕之排氣 用閥48a、48b、渦輪分子幫浦5〇、真空管路51、紫外線照 射部26之電源單位52、升降桿機構3〇之驅動部136及氣體供 給部34等。O: \ 87 \ 87876.DOC 1230401 view. Fig. 3 is a side view showing the structure of an embodiment of the substrate processing apparatus of the present invention. Fig. 4 is a cross-sectional view taken along line A-A in Fig. 2. As shown in FIG. 2 to the drawing, the substrate processing device 20 is configured to continuously perform ultraviolet light radical oxidation treatment of the Shixi substrate, and the high frequency of the oxide film formed by using such ultraviolet light radical oxidation treatment is as follows. Free radical nitriding. The main materials of the substrate processing apparatus 2G include: a processing container 22 divided into a processing space inside; a heating portion 24 for heating a substrate to be processed (Shi Xi substrate) inserted into the processing chamber at a specific temperature; The ultraviolet irradiation part 26 on the upper part of the container 22, the long-distance plasma part 27 for supplying nitrogen radicals, the rotation driving part 28 for rotating the substrate to be processed, and the lifting rod mechanism for lifting and lowering the substrate to be processed inserted into the processing space 30, It is an exhaust path 32 inside the decompression processing container η, and a gas supply portion 34 that supplies gas (process gas such as nitrogen, oxygen, etc.) inside the processing container 22. The substrate processing apparatus 20 includes a frame 36 for supporting the above-mentioned main components. The frame 36 is a three-dimensionally assembled iron frame. It is erected from the bottom of the table-like bottom frame 38 placed on the ground, and the back of the bottom frame 38 is erected vertically. 2 The vertical frames 40 and 41 are formed by the middle of the vertical frame 40. The middle frame 42 is horizontally extended from the horizontal frame, and the upper frame 44 of the vertical frames 40 and 41 is horizontally erected horizontally. The bottom frame 38 is equipped with a cooling water supply unit 46, exhaust valves 48a and 48b including electromagnetic pumps, a turbo molecular pump 50, a vacuum line 51, a power supply unit 52 of the ultraviolet irradiation unit 26, and a lifting rod mechanism 30. The driving section 136, the gas supply section 34, and the like.

O:\87\87876.DOC -11 - 1230401 管ΓοΓ。直另框外4G之㈣形成有可’插各㈣料之電鏡線導 :卜1、二卜，於垂直框41之内部形成有排氣導管4U。此 止開2 垂直框4Q中間部之托架58上安裝有緊急停 而在被固疋於垂直框41中間部之把架62上則安 農有由冷卻水進行溫度調整之溫度調整器64。 於中=框42上係支持有：上述處理容㈣、紫外線照射 ㈣、祕離電“27、旋轉驅動部28、 卿控制器57。另外’於上部框44上則搭載上冓連通 自氣體供給部34所拉出之複數條氣體管路 離子測量控制㈣、進行壓力控制之Apc控制控制 渦輪分子幫浦5〇之TMP控制器72等。 圖5係顯示被配置於處理容器22下方之機器構成之前視 圖。圖6係顯示被配置於處理容器22下方之機器構成之俯視 圖。圖7係顯示被配置於處理容器22下方之機器構成之側視 圖。圖8A係顯示排氣路徑32之構成之俯視圖；而圖8b則顯 不排軋路徑32之構成之前視圖；圖8C為沿著B_B線之縱剖 面圖。 如圖5至圖7所不，於處理容器22之後部下方設置有排出 處理谷器22内部氣體之排氣路徑32。該排氣路徑32係被安 裝成與橫向尺寸與形成於處理容器22内部之處理空間之橫 向丸幅大致相同而形成之長方形排氣口 74連通。 如此’由於排氣口 74係延伸形成為對應處理容器22内部 之棱向寬幅尺寸之長度，故自處理容器22之前部223側供給 至内部之氣體’會如後述般，通過處理容器22内部流向後O: \ 87 \ 87876.DOC -11-1230401 Tube ΓοΓ. Straight 4G outside the frame is formed with an electron microscope wire guide for inserting various materials: Bu 1, 2 Bu, and an exhaust duct 4U is formed inside the vertical frame 41. An emergency stop is mounted on the bracket 58 in the middle portion of the open 2 vertical frame 4Q, and a handle 62 fixed to the middle portion of the vertical frame 41 is equipped with a temperature regulator 64 for temperature adjustment by cooling water. In the middle box 42, the above-mentioned processing capacity, ultraviolet irradiation, and ionization "27, rotary drive unit 28, and controller 57 are supported. In addition, the upper frame 44 is equipped with an upper cylinder connected to the gas supply. The plurality of gas pipeline ion measurement control units pulled out by the unit 34, the APC control for pressure control, the TMP controller 72 of the turbo molecular pump 50, and the like. Fig. 5 shows the structure of the machine disposed below the processing container 22. Front view. Fig. 6 is a plan view showing the structure of the machine disposed below the processing container 22. Fig. 7 is a side view showing the structure of the machine disposed below the processing container 22. Fig. 8A is a plan view showing the structure of the exhaust path 32 8b is a front view showing the structure of the non-discharge rolling path 32; FIG. 8C is a longitudinal sectional view taken along the line B_B. As shown in FIGS. 5 to 7, a discharge processing valleyr is provided below the rear portion of the processing container 22. The exhaust path 32 of the internal gas 22. The exhaust path 32 is installed to communicate with a rectangular exhaust port 74 formed in a lateral dimension substantially the same as the lateral shot width of the processing space formed inside the processing container 22. 'Since the exhaust port 74 is extended to correspond to the width of the inside of the processing container 22, the gas supplied to the inside from the front portion 223 side of the processing container 22 will flow through the inside of the processing container 22 as described later. Rear

O:\87\87876.DOC -12 - 1230401 方，以一定流速（層流）朝排氣路徑32有效率地排氣。 如圖8A〜圖8C所示，排氣路徑32係具有：被連通至排氣 口 74之長方形開口部32a、開口部32&之左右側面朝向下方 而傾斜成錐形狀之錐形部32b、在錐形部32b 面積被集中之底部一底部32c向前方突出之L=: 排氣管32d、開π於主排氣f32d下端之排出口32认向錐形 部32b之下部32f開口之分流用排出口 32g。排出口 32e被連 通至渦輪分子幫浦5〇之吸氣口。$外，分流用排出口叫被 連通至分流管路5丨a。 如圖5至圖7所示，由處理容器22之排氣口以所排出之氣 體，係藉由渦輪分子幫浦50之吸引力，自形成為長方形之 開口部32a流入，通過錐形部32b至底部32c，再經由主排氣 管32d與排出口 32e被引導至渦輪分子幫浦5〇。 渦輪分子幫浦50之吐出管5〇a係經由閥48a被連通至真空 管路51。因此，充填於處理容器22内部之氣體，當閥48&被 打開時則經由渦輪分子幫浦50向真空管路51排出。另外， 於排氣路徑32之分流用排出口 32g係連接有分流管路5U， 而該分流管路51a會因閥48b之打開而與真空管路51連通。 在此’說明有關構成本發明重要部分之處理容器22及其 周邊機器之構成。 [處理容器22之構成] 圖9係擴大顯示處理容器22及其周邊機器之側面縱剖面 圖。圖ίο為從上方所見到拿掉蓋子構件82之處理容器22内 部之俯視圖。 O:\87\87876.DOC ^ 13 - 1230401 如圖9與圖10所示，處理容器22係藉由蓋子構件以閉塞住 室80上部開口之構成，其内部成為製程空間（處理空間）84。 處理容器22在前部22a形成有可供給氣體之供給口 22g , 而後部22b則形成有搬送口 94。於供給口 22g設置有後述之 氣體噴射喷嘴部93，而於搬送口 94則連通有後述之閘極閥 96 ° 圖11為處理容器22之俯視圖。圖12為處理容器22之前視 圖。圖13為處理容器22之仰視圖。圖14為沿著圖 線之縱剖面圖。圖15為處理容器22之右侧視圖。圖16為處 理容器22之左侧視圖。 如圖11至圖16所示，於處理容器22之底部22c設置有··被 插入加熱部24之開口 73，及前述開口成長方形之排氣口 74。於排氣口 74連通有前述之排氣路徑32。另外，室肋與 蓋子構件82，係例如切割加工鋁合金，並加工成如上述之 形狀者。 另外，於處理容器22之右側面22e係安裝有：為窺視製程 空間84之第i、第2窗口 75、76,及為測定製程空間84之溫 度之感應器單元77。 於本實施例中，由於在右側面22e中央之左側配置有形成 為橢圓形之第i窗口 75 ’而右側面22e中央之右側配置有形 成為圓形之第2窗π 76,因而可由兩方面直接目視被保持於 製程空間84之被處理基板w之狀態，故有利於觀測被處理 基板W之成膜狀況等。 另外’窗口75、76之構成為在插人有熱電偶等之溫度測定O: \ 87 \ 87876.DOC -12-1230401, efficiently exhausting to the exhaust path 32 at a certain flow rate (laminar flow). As shown in FIGS. 8A to 8C, the exhaust path 32 includes a rectangular opening portion 32a communicating with the exhaust port 74, and a left and right side surfaces of the opening portion 32 & The tapered portion 32b has a concentrated area, and the bottom portion and the bottom portion 32c protrude forward L =: an exhaust pipe 32d, a discharge port 32 opening π at the lower end of the main exhaust f32d, and a diverting row which is opened toward the lower portion 32f of the tapered portion 32b Exit 32g. The exhaust port 32e is connected to the suction port of the turbo molecular pump 50. Besides, the outlet for shunting is called to be connected to the shunting pipe 5a. As shown in FIG. 5 to FIG. 7, the gas exhausted from the exhaust port of the processing container 22 is attracted by the turbo molecular pump 50 and flows in from the rectangular opening 32 a and passes through the tapered portion 32 b. To the bottom 32c, it is guided to the turbo molecular pump 50 through the main exhaust pipe 32d and the discharge port 32e. The discharge pipe 50a of the turbo molecular pump 50 is connected to the vacuum line 51 via a valve 48a. Therefore, the gas filled in the processing container 22 is discharged to the vacuum line 51 through the turbo molecular pump 50 when the valve 48 & is opened. In addition, a shunting outlet 32g in the exhaust path 32 is connected to a shunting line 5U, and the shunting line 51a is communicated with the vacuum line 51 due to the opening of the valve 48b. Here, the configuration of the processing container 22 and its peripheral devices constituting an important part of the present invention will be described. [Configuration of the processing container 22] Fig. 9 is an enlarged side sectional view of the processing container 22 and its peripheral devices. Figure 8 is a plan view of the inside of the processing container 22 with the lid member 82 removed from above. O: \ 87 \ 87876.DOC ^ 13-1230401 As shown in Figs. 9 and 10, the processing container 22 is formed by a cover member to close the upper opening of the chamber 80, and the inside thereof becomes a process space (processing space) 84. The processing container 22 is formed with a gas supply port 22g in the front portion 22a, and a transport port 94 is formed in the rear portion 22b. The supply port 22g is provided with a later-described gas injection nozzle portion 93, and the transfer port 94 is connected with a later-described gate valve 96 °. FIG. 11 is a plan view of the processing container 22. As shown in FIG. FIG. 12 is a front view of the processing container 22. FIG. 13 is a bottom view of the processing container 22. Fig. 14 is a longitudinal sectional view taken along the line. FIG. 15 is a right side view of the processing container 22. FIG. 16 is a left side view of the processing container 22. As shown in Figs. 11 to 16, the bottom 22c of the processing container 22 is provided with an opening 73 inserted into the heating section 24, and an exhaust opening 74 having a rectangular opening as described above. The above-mentioned exhaust path 32 is communicated with the exhaust port 74. The ribs and the lid member 82 are made of, for example, a cut aluminum alloy and processed into a shape as described above. In addition, on the right side 22e of the processing container 22, an i-th, a second window 75, 76 for peeping the process space 84, and a sensor unit 77 for measuring the temperature of the process space 84 are mounted. In this embodiment, since the i-th window 75 ′ formed in an oval shape is arranged on the left side of the center of the right side 22 e and the second window π 76 is formed as a circle on the right side of the center of the right side 22 e, it can be viewed directly from two aspects. The state of the substrate w to be processed held in the process space 84 is advantageous for observing the film formation status of the substrate W to be processed. In addition, the windows 75 and 76 are configured to measure the temperature when a thermocouple is inserted.

O:\87\87876.DOC -14- 1230401 器具時，可由處理容器22拆掉。 另外，於處理容器22之左側面22d，係安裝有為測定製程 空間84之壓力之感應器單元85。於該感應器單元85設置有 測定範圍不同的3個壓力計85a〜85c，可高精密度地測定製 程空間84之壓力變化。 另外，於形成製程空間84之處理容器η之内壁之四個角 落，設置有形成為R形狀之彎曲部22h，其不僅可藉由該彎 曲部22h迴避應力集中，並可發揮使由氣體噴射噴;部 射喷出之氣體流安定之作用。 [紫外線照射部26之構成] 如圖8至圖11所示，紫外綠照射部26係被安裝於蓋子構件 82之上面。於該紫外線照射部26之筐體26&内部，以特定間 隔平行地配置有形成為圓筒狀之2根紫外線光源（uv 燈）86 、 87 。 该紫外線光源86、87具有發出波長為172 _之紫外線之特 性，被設置於經由形成於蓋子構件82之橫向延伸之長方形 ^ 82a ，可對與保持於製程空間84之被處理基板w 上面相對之製程空間84之前半側（於圖8左半部）區域照射紫 外線之位置。 另外，由延伸成直線狀之紫外線光源86、87照射在被處 里基板W上之备、外線之強度分佈並不一致，而是因被處理 基板W之半徑方向之位置而變化，一方是越往被處理基板W T外周圍側則越減少，另一方則是越往内周圍側則越減 少。如此紫外線光源86、87雖在被處理基板w上形成單獨O: \ 87 \ 87876.DOC -14- 1230401 For the appliance, it can be removed by the processing container 22. In addition, a sensor unit 85 for measuring the pressure in the process space 84 is mounted on the left side 22d of the processing container 22. The sensor unit 85 is provided with three pressure gauges 85a to 85c having different measurement ranges, and the pressure change in the process space 84 can be measured with high precision. In addition, the four corners of the inner wall of the processing container η forming the process space 84 are provided with a curved portion 22h formed in an R shape, which can not only avoid stress concentration by the curved portion 22h, but also can be exerted by gas injection; Stabilization of the gas flow from the part jet. [Configuration of Ultraviolet Irradiation Section 26] As shown in FIGS. 8 to 11, the ultraviolet green irradiation section 26 is mounted on the cover member 82. Inside the casing 26 & of the ultraviolet irradiation section 26, two ultraviolet light sources (uv lamps) 86 and 87 formed in a cylindrical shape are arranged in parallel at a specific interval. The ultraviolet light sources 86 and 87 have a characteristic of emitting ultraviolet rays with a wavelength of 172 mm, and are arranged on a rectangular ^ 82a extending laterally through the cover member 82, and can be opposed to the upper surface of the substrate w to be held in the process space 84. The position of the front half of the process space 84 (on the left half of FIG. 8) is where the ultraviolet rays are irradiated. In addition, the intensity distribution of the preparations and outer lines irradiated by the linear ultraviolet light sources 86 and 87 on the substrate W is not the same, but varies depending on the radial position of the substrate W to be processed. The outer peripheral side of the target substrate WT decreases, and the other decreases toward the inner peripheral side. In this way, the ultraviolet light sources 86 and 87 are formed separately on the substrate w to be processed.

O:\87\87876.DOC -15- 1230401 且單調地變化之紫外線強度分佈，但對於被處理基板…之 紫外線強度分佈之變化方向則成相反。 因此，藉由UV燈控制器57的控制來最適化紫外線光源 86、87之驅動能量，故可在被處理基板w上實現非常地一 致之紫外線強度分佈。 另外，如此的驅動能量之最適值，係變化對紫外線光源 86、87之驅動輸出而評估成膜結果，來求得最適值。 另外，被處理基板W與紫外線光源86、87之圓筒狀圓筒芯 中心之距離，例如係設定成5〇〜3〇〇mm，較佳為1〇〇〜2〇〇mm 左右。 圖17係擴大顯示紫外線光源86、87之安裝構造之縱剖面 圖。 如圖17所示，紫外線光源86、87係被保持於相對於紫外 線照射部26筐體26a之底部開口 26b之位置。並且，底部開 口 26b係形成為於相對於被保持在製程空間84之被處理: 板W上面之位置處開口’且橫向寬幅尺寸較紫外線光源 86,87全長更長之長方形。 於底部開口 26b之邊緣部26c，容梦古山、头 处| I 女裝有由透明石英所形成 之透明窗88。透明窗88將由紫外後氺、、馬 糸汴琛九源86、87所照射之紫 外線透射入製程空間84，並且呈右π i… 卫兑具有可承受製程空間84減壓 時之壓力差之強度。 另外，於透明窗88下面邊緣部，形士、士 λ 形成有抵接被安裝於底 部開口⑽之邊緣部26c之溝内之密封構件(〇環)89之密封 面88a。該密封面88a係由為保護密封構件89之塗層或由黑O: \ 87 \ 87876.DOC -15- 1230401 and the monotonically changing UV intensity distribution, but for the substrate to be processed ... the direction of change of the UV intensity distribution is opposite. Therefore, by controlling the UV lamp controller 57 to optimize the driving energy of the ultraviolet light sources 86 and 87, a very uniform ultraviolet intensity distribution can be achieved on the substrate w to be processed. In addition, the optimum value of such driving energy is obtained by evaluating the film formation results by changing the drive output to the ultraviolet light sources 86 and 87 to obtain the optimum value. The distance between the substrate W to be processed and the center of the cylindrical cylindrical core of the ultraviolet light sources 86 and 87 is set to, for example, 50 to 300 mm, and preferably about 100 to 200 mm. Fig. 17 is a longitudinal sectional view showing the mounting structure of the ultraviolet light sources 86 and 87 in an enlarged manner. As shown in Fig. 17, the ultraviolet light sources 86 and 87 are held at positions corresponding to the bottom opening 26b of the housing 26a of the ultraviolet irradiation section 26. In addition, the bottom opening 26b is formed in a rectangular shape relative to the processed object held in the process space 84: it is opened at a position above the plate W and has a wider width in the lateral direction than the ultraviolet light source 86,87. At the edge portion 26c of the opening 26b at the bottom, Rong Menggu Mountain, head | I is equipped with a transparent window 88 formed of transparent quartz. The transparent window 88 transmits the ultraviolet rays irradiated by the ultraviolet back rays, Ma Jichen nine sources 86, 87 into the process space 84, and has a right π i ... The strength of the guard has the strength to withstand the pressure difference when the process space 84 is decompressed. . In the lower edge portion of the transparent window 88, a seal face, a square λ is formed with a seal surface 88a which abuts a seal member (o-ring) 89 installed in the groove of the edge portion 26c of the bottom opening ⑽. The sealing surface 88a is formed by a coating for protecting the sealing member 89 or by a black

O:\87\87876.DOC -16- 1230401 雄、封構件8 9之材質 同時並防止密 石英所形成。藉此， 劣化保護密封性能， 製程空間84。 不會分解，可防止 封構件89之材質侵入至 另外，於透明窗88上面邊緣部與不錄鋼製之防護罩88b 抵接/提高鎖緊構件91夾住透明窗_之強丨，防止因 鎖緊時之擠壓力造成透明窗88破損。 另外，於本實施例中，係將紫外線光源86、87與透明窗 織置為於與由氣財时嘴部㈣切之氣體流之流動 方向垂直而延伸之方向’但不限於此，例如亦可配置成使 紫外線光源86、87與透明窗88延伸於氣體流之流動之方向。 [氣體喷射喷嘴部93之構成] 如圖9與圖1〇所示，處理容器22在開口於前部之供給 口 22g處，設置有對製程空間84内部噴射氮氣或氧氣之氣體 喷射喷嘴部93。該氣體喷射喷嘴部93係如後述，在製程空 間84之橫向方向配置有一列的複數個喷射口 ％ &，可使由複 數個的喷射口 93a所喷射之氣體，以層流狀態通過被處理基 板W表面，而在製程空間84内部產生安定的氣流。 另外’閉基製程空間84之蓋子構件82之下面與被處理基板 W之距離’係例如被設定成5〜100 mm，較理想為25〜85 mm 左右。 [加熱部24之構成] 如圖9與圖1〇所示，加熱部24之構成為具備有··鋁合金製 之底座110、被固定於底座110上之透明之石英鐘罩112、被 收容於石英鐘罩112之内部空間U3之SiC加熱器114、由不 \87\87876.DOC -17 - 1230401 透明石英所形成之熱反射構件（反射器）丨丨6、由被裝載於石 英鐘罩112上面之SiC加熱器114所加熱之Sic基板設置台 (加熱構件）11 8。 因此，SiC加熱器114與熱反射構件116係由石英鐘罩112 之内部空間113所隔離，可防止在製程空間料之污染。另 外，於洗淨步驟，因僅需洗淨被露出於製程空間84内之sic 基板設置台118即可，故可省略洗淨Sic加熱器114與熱反射 構件116之作業。 被處理基板w係由保持構件120保持在相對於Sic基板設 置台11 8之上方。另一方面，Sic加熱器114被裝載於熱反射 構件116之上面，而SiC加熱器114所發散之熱係放射至sic 基板設置台118，且熱反射構件116所反射之熱亦放射至sic 基板設置台118。此外，本實施例之Sic加熱器114係在稍稍 離開sic基板設置台118之狀態下加熱至約7〇(rc。O: \ 87 \ 87876.DOC -16- 1230401 The material of the male and sealing members 8 9 At the same time, it prevents the formation of dense quartz. As a result, the protective sealing performance is deteriorated, and the process space 84 is deteriorated. Will not decompose, can prevent the material of the sealing member 89 from invading, and the upper edge portion of the transparent window 88 and the non-recorded steel protective cover 88b abut / improve the locking member 91 to sandwich the transparent window _ strong 丨 to prevent The squeezing force during locking causes the transparent window 88 to be damaged. In addition, in this embodiment, the ultraviolet light sources 86 and 87 and the transparent window are woven so as to extend in a direction perpendicular to the flow direction of the gas flow that is cut off by the mouth when gas is used, but it is not limited to this, for example. It may be arranged such that the ultraviolet light sources 86, 87 and the transparent window 88 extend in the direction of the gas flow. [Configuration of Gas Injection Nozzle Section 93] As shown in FIG. 9 and FIG. 10, the processing container 22 is provided with a gas injection nozzle section 93 for injecting nitrogen or oxygen into the process space 84 at a supply port 22g opened at the front. . The gas injection nozzle section 93 is described later. A plurality of injection ports% & are arranged in a row in the lateral direction of the process space 84, and the gas injected from the plurality of injection ports 93a can be processed in a laminar flow state. On the surface of the substrate W, a stable airflow is generated inside the process space 84. The distance between the lower surface of the cover member 82 of the closed-base process space 84 and the substrate W to be processed is set to, for example, 5 to 100 mm, and more preferably about 25 to 85 mm. [Configuration of Heating Section 24] As shown in FIGS. 9 and 10, the heating section 24 is configured to include a base 110 made of aluminum alloy, a transparent quartz bell cover 112 fixed to the base 110, and housed in The SiC heater 114 in the inner space U3 of the quartz bell cover 112, a heat reflecting member (reflector) formed of transparent quartz 87.87876.DOC -17-1230401, and 6. The Sic substrate mounting table (heating member) 118 heated by the SiC heater 114. Therefore, the SiC heater 114 and the heat reflecting member 116 are isolated by the internal space 113 of the quartz bell cover 112, which can prevent the contamination of the material in the process space. In addition, in the cleaning step, it is only necessary to clean the sic substrate setting base 118 exposed in the process space 84, and therefore, the operation of cleaning the Sic heater 114 and the heat reflection member 116 can be omitted. The substrate w to be processed is held by the holding member 120 above the Sic substrate setting stage 118. On the other hand, the Sic heater 114 is mounted on the heat reflection member 116, and the heat emitted by the SiC heater 114 is radiated to the sic substrate setting stage 118, and the heat reflected by the heat reflection member 116 is also radiated to the sic substrate. Setting table 118. In addition, the Sic heater 114 of this embodiment is heated to about 70 (rc) with the sic substrate set stand 118 slightly separated.

SiC基板設置台118因其熱傳導率佳，故可有效率地將來 自SiC加熱器114之熱傳達至被處理基板w，並消除被處理 基板W邊緣部份與中心部份之溫度差，防止被處理基板w 因溫度差而彎曲。 [旋轉驅動部28之構成] 如圖9與圖10所示，旋轉驅動部28係由以下所構成··在 基板设置台U8之上方保持被處理基板W之保持構件12〇、 被固疋於底座11〇下面之外殼122、對在由外殼m所劃分之 内部空間124内結合於保持構件120之軸12〇〇1之陶瓷軸126 進行旋轉驅動之馬達128、及傳達馬達128之旋轉之磁鐵聯The SiC substrate setting table 118 has good thermal conductivity, so it can efficiently transfer heat from the SiC heater 114 to the substrate w to be processed, and eliminate the temperature difference between the edge portion and the center portion of the substrate W to be processed. The processing substrate w is bent due to a temperature difference. [Configuration of Rotary Drive Unit 28] As shown in Figs. 9 and 10, the rotary drive unit 28 is configured as follows: The holding member 12 for holding the substrate W to be processed above the substrate setting table U8 is fixed to A housing 122 below the base 11, a motor 128 for rotationally driving a ceramic shaft 126 of a shaft 12001 which is coupled to a holding member 120 in an internal space 124 divided by the housing m, and a magnet for transmitting the rotation of the motor 128 Link

O:\87\87876.DOC -18- 1230401 結器130。 旋轉驅動部28中，保持構件12〇之軸12〇d係貫通112石 夬釦罩亚結合於陶瓷軸126,而於陶瓷軸126與傳達馬達128 之旋轉軸間則是經由磁鐵聯結器13〇以非接觸之方式傳達 驅動此3：，故使旋轉驅動系統之構成變得簡潔，亦有助於 裝置全體之小型化。 保持構件12〇自UOd上端起，具有於水平方向延伸成放射 狀之#。卩120a〜120c。被處理基板w以被裝載於保持構件 之臂部120a〜120c之狀態保持著。如此，被保持之被處 理基板W與保持構件120 一起由傳達馬達128以特定之旋轉 速度來旋轉，藉此可平均因Sic加熱器114發熱之溫度分 佈，並使來自紫外線光源86、87所照射之紫外線之強度分 佈均一，且可對表面施以均一之成膜。 [升降桿機構3〇之構成] 如圖9與圖1〇所示，升降桿機構3〇係被設置於室8〇之下方 且112石英鐘罩之側面，由被插入於室8〇内之昇降臂丨32、 被連結於昇降臂132之昇降軸134、使昇降軸134昇降之驅動 邛136所構成。昇降臂132係例如由陶瓷或石英所形成，如 圖ίο所不，具有：結合著昇降軸134上端之結合部，及 包圍SiC基板設置台118外周之環狀部132b。並且，於昇降 臂132,在圓周方向上以12〇度之間隔，設置有由環狀部13訃 之内周起向中心延伸之3支抵接銷138a〜138c。 抵接銷1 3 8 a〜1 3 8 c會下降至嵌合由s i C基板設置台11 8之 外周向中心延伸而形成之溝11 8 a〜11 8 c之位置，藉由昇降臂. O:\87\87876.DOC -19- i23〇4〇1 上昇而再移動至SlC基板設置台ii8之上方。另外，抵接 銷138a〜138c係配置成不干涉到較sic基板設置台丨丨8中 “ I伸於外周侧所形成之保持構件之臂部l2〇a〜12〇c。 昇降臂132其搬送自動機98之機械臂在取出被處理基板 W之4係使上述抵接銷138a〜138c抵接於被處理基板w之 下面」再由保持構件120之臂部12〇a〜12〇c拿起被處理基板 W藉此搬送自動機％之機械f可移動至被處理基板w 之下方而可以降下昇降臂132來搬送並保持被處理基板 W。 [石英墊圈100之構成] ^圖9與圖1{)所示，於處理容器22之内部，為遮蔽紫外線 而女裝有例如由白色等之不透明石英所形成之石英墊圈 100又；5英墊圈100係如後所述，為組合下部盒體m、 側面盒體104、上部各柄西 . 上。丨I體106及包覆石英鐘罩112外周之圓筒 狀盒體10 8之構成。 ，石英墊圈100’藉由覆蓋形成製程空間84之處理容器22 與盍子構件82之内壁，可得到防止處理容器22與蓋子構件 82之熱膨脹之隔熱效果，並防止處理容器η與蓋子構件a 之内壁因紫外線而氧化，且具有防止金屬㈣之任務。 [遠距離電漿部27之構成] 如圖9與圖1〇所示，於製程空間⑽給氮自由基之遠距離 電聚部27 ’係被安裝於處理容器22之前部22a，並經由供給 管路90連通至處理容器22之供給口 92。 ° 於該遠距離電II部27中，供給有^等之惰性氣體與氮氣O: \ 87 \ 87876.DOC -18-1230401 knotter 130. In the rotation driving part 28, the shaft 12od of the holding member 12o penetrates 112 and is connected to the ceramic shaft 126 by a stone cover. The ceramic shaft 126 and the rotary shaft of the transmission motor 128 are connected via a magnet coupling 13. The drive 3: is transmitted in a non-contact manner, so the structure of the rotary drive system is simplified, and it also contributes to the miniaturization of the entire device. The holding member 120 has a # extending in a horizontal direction from the upper end of the UOd.卩 120a ~ 120c. The substrate to be processed w is held in the arms 120a to 120c of the holding member. In this way, the substrate to be processed W, which is held together with the holding member 120, is rotated by the transmission motor 128 at a specific rotation speed, whereby the temperature distribution generated by the Sic heater 114 can be averaged and the ultraviolet light sources 86 and 87 can be irradiated. The intensity distribution of ultraviolet rays is uniform, and the surface can be uniformly formed into a film. [Configuration of the lifting rod mechanism 30] As shown in FIG. 9 and FIG. 10, the lifting rod mechanism 30 is disposed below the chamber 80 and on the side of the 112 quartz bell cover, and is lifted and lowered by being inserted into the chamber 80. The arm 32 is composed of a lifting shaft 134 connected to the lifting arm 132 and a driving shaft 136 for lifting the lifting shaft 134. The elevating arm 132 is formed of, for example, ceramics or quartz, and includes a joint portion that is connected to the upper end of the elevating shaft 134, and an annular portion 132b that surrounds the outer periphery of the SiC substrate mounting table 118. In addition, at the lifting arm 132, three contact pins 138a to 138c extending from the inner periphery of the annular portion 13 部 toward the center are provided at intervals of 120 degrees in the circumferential direction. The abutment pins 1 3 8 a ~ 1 3 8 c will be lowered to the position of the groove 11 8 a ~ 11 8 c which is formed by extending from the peripheral center of the si C substrate setting table 11 8 by the lifting arm. O : \ 87 \ 87876.DOC -19- i23〇4〇1 ascends and moves to the top of the SlC substrate setting table ii8. In addition, the contact pins 138a to 138c are arranged so as not to interfere with the arm portions 12a to 12c of the holding member formed by the "I" extending on the outer peripheral side in the sic substrate setting table. The lifting arm 132 is transported. When the robot arm of the robot 98 takes out the substrate W to be processed, the above-mentioned contact pins 138a to 138c are brought into contact with the substrate w to be processed. The machine f of the substrate W to be processed can be moved below the substrate w to be processed, and the lifting arm 132 can be lowered to transfer and hold the substrate W to be processed. [Configuration of Quartz Gasket 100] ^ As shown in Figs. 9 and 1 {), a quartz gasket 100 formed of opaque quartz, such as white, is used to shield women from ultraviolet rays inside the processing container 22; 100 series, as described later, is a combination of the lower box m, the side box 104, and the upper handles. The structure of the I body 106 and the cylindrical case 108 covering the outer periphery of the quartz bell cover 112. By covering the inner walls of the processing container 22 and the rafter member 82 forming the process space 84, the quartz gasket 100 'can obtain a thermal insulation effect to prevent the thermal expansion of the processing container 22 and the cover member 82, and prevent the processing container η and the cover member a The inner wall is oxidized by ultraviolet rays and has the task of preventing metal plutonium. [Configuration of the long-distance plasma unit 27] As shown in FIG. 9 and FIG. 10, the long-distance electro-polymerization unit 27 'for supplying nitrogen radicals in the process space is installed at the front portion 22a of the processing container 22 and supplied through The pipeline 90 is connected to the supply port 92 of the processing container 22. ° In the long-distance electric section 27, an inert gas such as ^ and nitrogen are supplied.

O:\87\87876.DOC -20- 1230401 體’藉由電漿將此活性化，可形成氮自由基。如此所形成 之氮自由基會沿著被處理基板w之表面流動而氮化基板表 面。 另外，於其他之氮氣體，亦可實施使用〇2、NO、N2〇、 NII3氣體專之氧化、氮氧化自由基製程。 [閘極閥9 6之構成] 如圖9與圖1〇所示，於處理容器22之後部設置有為搬送被 處理基板W之搬送口 94。該搬送口 94係由閘極閥96所閉塞 住，僅於搬送被處理基板w時由閘極閥96之打開動作而開 放。 於閘極閥96之後方設置有搬送自動機％。並且，配合閘 極閥96之打開動作，搬送自動機98之機械臂會由搬送口 94 進入至製程工間8 4之内部，並進行送被處理基板w之交換 作業。 [上述各構成部之詳細] (1)在此，詳細說明關於上述氣體噴射喷嘴部93之構成。 圖18係擴大顯示氣體噴射喷嘴部93之構成之縱剖面圖。 圖19係擴大顯示氣體噴射喷嘴部93之構成之橫剖面圖。圖 20係擴大顯示氣體喷射噴嘴部93之構成之前視圖。 如圖18至圖20所示，氣體喷射噴嘴部93於前面中央，具 有可連通上述遠距離電漿部27之供給管路9〇之連通孔Μ， 而於連通孔92之上方，則安裝有複數個喷射孔93^〜93^於 橫方向配設成一列之噴嘴板93bl〜93b3。噴射孔93a广％^係 例如為直徑1 mm的小孔，而以1〇 mm之間隔設置。O: \ 87 \ 87876.DOC -20-1230401 The body ’can be activated by plasma to form nitrogen radicals. The nitrogen radicals thus formed will flow along the surface of the substrate w to be processed to nitride the surface of the substrate. In addition, in other nitrogen gas, the process of oxidizing and oxidizing free radicals using 02, NO, N20, and NII3 gas can also be implemented. [Configuration of Gate Valve 96] As shown in FIG. 9 and FIG. 10, a transfer port 94 for transferring the substrate W to be processed is provided at the rear of the processing container 22. The transfer port 94 is closed by a gate valve 96, and is opened by the opening operation of the gate valve 96 only when the substrate w to be processed is transferred. A transport automaton% is provided behind the gate valve 96. In addition, in cooperation with the opening operation of the gate valve 96, the robot arm of the transfer robot 98 enters the inside of the process chamber 84 from the transfer port 94, and performs the exchange operation of the substrate w to be processed. [Details of the above-mentioned respective components] (1) Here, the configuration of the gas injection nozzle portion 93 will be described in detail. FIG. 18 is a longitudinal sectional view showing an enlarged configuration of the gas injection nozzle portion 93. FIG. FIG. 19 is a cross-sectional view showing the structure of the gas injection nozzle section 93 in an enlarged manner. Fig. 20 is an enlarged front view showing the configuration of the gas injection nozzle portion 93. As shown in FIG. 18 to FIG. 20, the gas injection nozzle portion 93 has a communication hole M at the center of the front surface, which can communicate with the supply line 90 of the remote plasma unit 27, and above the communication hole 92, The plurality of ejection holes 93 ^ ~ 93 ^ are arranged in a row in the nozzle plate 93bl ~ 93b3. The injection holes 93a are, for example, small holes having a diameter of 1 mm, and are provided at intervals of 10 mm.

OA87\87876.DOC -21 - 1230401 ，另外，於本實施例中，雖設有包含小孔之射噴孔 ，但不限於此，例如亦可為以細小狹縫做為射喷 孔之構成。 、 另外，噴嘴板93bl〜93b3係被鎖緊於氣體喷射噴嘴部％之 土面。因此，自射噴孔93ai〜93an所射喷之氣體會由氣體噴 射噴嘴部93之壁面流向前方。 、 例如，在射噴孔93ai〜93an被設置於管狀之噴嘴管路時， 自射噴孔93a!〜93an所射噴之氣體一部份會發生回流至噴嘴 官路之後方，而在製程空間84產生氣體滯留，引發被處理 基板W周邊之氣體流不安定之問題。 但於本實施例中，因射喷孔93ai〜93an為形成於氣體噴射 喷嘴部93之壁面之構成，故不會產生如此之氣體返回到噴 鳴後方之現象’可保持於安定被處理基板W周邊氣體流之 層流狀態。藉此，可均一地形成被處理基板w上之成膜。 另外，在各噴嘴板931^〜93133相對之内壁，形成有具有使 氣體滯留之機能之凹部93Cl〜93c3。因該凹部93ci〜93c3係被 设置於射噴孔9393an之上流，故可平均自各射噴孔 93ai〜93an所射噴之氣體之流速。藉此，能平均於製程空間 84全區域之流速。 此外’各凹部93Cl〜93c：3可連通貫穿氣體噴射噴嘴部93之 供給孔93di〜93d3。又，中央之氣體供給孔931不與連通孔 92交叉而形成於錯開之位置，折彎成彎曲形狀。 並且’於中央之氣體供給孔93 d2,藉由第1質量控制器97a 而被控制其流量之氣體經由氣體供給管路992而被供應。OA87 \ 87876.DOC -21-1230401 In addition, in this embodiment, although a spray hole including a small hole is provided, it is not limited to this. For example, a small slit may be used as a spray hole. In addition, the nozzle plates 93bl to 93b3 are locked to the soil surface of the gas injection nozzle portion. Therefore, the gas sprayed from the self-ejection nozzle holes 93ai to 93an flows forward from the wall surface of the gas injection nozzle portion 93. For example, when the injection nozzle holes 93ai ~ 93an are arranged in a tubular nozzle pipe, a part of the gas sprayed from the injection nozzle holes 93a! ~ 93an will flow back to the nozzle official path, and in the process space 84 causes gas retention, which causes a problem of unstable gas flow around the substrate W to be processed. However, in this embodiment, since the injection nozzle holes 93ai to 93an are formed on the wall surface of the gas injection nozzle portion 93, such a phenomenon that the gas returns to the back of the injection noise does not occur, and can be maintained on a stable substrate to be processed W The laminar state of the surrounding gas flow. Thereby, the film formation on the to-be-processed substrate w can be uniformly formed. In addition, recessed portions 93Cl to 93c3 having a function of retaining gas are formed on the inner wall of each of the nozzle plates 931 to 93133. Since the recesses 93ci to 93c3 are provided above the injection holes 9393an, the flow velocity of the gas emitted from each injection hole 93ai to 93an can be averaged. As a result, the flow velocity over the entire area of the process space 84 can be averaged. In addition, each of the concave portions 93Cl to 93c: 3 can communicate with the supply holes 93di to 93d3 penetrating through the gas injection nozzle portion 93. Further, the central gas supply hole 931 is formed at a staggered position without intersecting the communication hole 92, and is bent into a curved shape. And the gas supply hole 93 d2 in the center is supplied with the gas whose flow rate is controlled by the first mass controller 97a through the gas supply line 992.

O:\87\87876.DOC -22- 1230401 又’於被配置於氣體供給孔9地左右之氣體供給孔93di， Π3徂猎由第2質量控制器別而被控制其流量之氣體經由 虱脰i、給管路99丨、993而被供應。 ^另外，第1質量控制器97a與第2質量控制器97b，係經由 ]。Β路"4、"5與氣體供給部34連接，並將來自氣體 供：邛34所供給之氣體流量控制於預先所設定之流量。 第1質量控制器97a與第2質量控制器m所供給之氣體， 係經由氣體供給管路％〜％到達氣體供給孔叫〜叫，而 充填於各凹部93c彳〜尨，$丄^ <O: \ 87 \ 87876.DOC -22- 1230401 The gas supply holes 93di located around the 9th place of the gas supply holes 93di, Π3 hunts the gas whose flow is controlled by the second quality controller through the tick i. It is supplied to the lines 99 丨 and 993. ^ In addition, the first quality controller 97a and the second quality controller 97b pass through]. Paths B and 4 are connected to the gas supply unit 34 and control the flow rate of the gas supplied from the gas supply: 邛 34 to a preset flow rate. The gas supplied by the first quality controller 97a and the second quality controller m reaches the gas supply hole through the gas supply pipe% ~%, and is filled in the recesses 93c 彳 ~ 彳, $ 丄 ^ <

Mb後，再由射喷孔93心〜93心喷向製程 空間84。 製程空間84内之氣體’為了可由延伸於處理容器22之前 部22a之橫向寬幅方向之各喷嘴板叫〜㈣之射喷孔 93ai〜93an向製程空間84之全區域噴射，在製程空間料之全 區域以特定流速(層流)流向處理容器22之後部2孔側。 此外，於處理容器22之後部22b側，由於延伸於後部22b 之橫向寬幅方向之長方形排氣口 74呈現開口，故製程空間 84内之氣5L成/;11_向後方’照特定流速（層流）朝排氣路徑 排氣。 另外，於本實施例中，因可控制2個系統之流量，故例如 亦可以第1質量控制器97a與第2質量控^器97b控制不同之 流量。 藉此，設定使供給於製程空間討内之氣體流量（流速）不 同，亦可使製程空間84内之氣體濃度分佈變化。此外，亦 可以第1質1控制器97a與第2質量控制器97b供給不同種類 O:\87\87876 DOC -23 - 1230401 之乳體，例如亦可以第1質量控制器W進行氮氣體之流量 控制’而以第2質量控制器㈣進行氧氣體之流量控制。 使用之氣體例如可為含氧氣體、含氮氣體及稀有氣體等。 (2)在此，詳細說明關於加熱部24之構成。 圖21係擴大顯示加熱部24構成之縱剖面圖。圖22係擴大 顯示加熱部2 4之仰視圖。 、如圖21及圖22所示，加熱部24係於銘合金製之底座110裝 載石英鐘罩112，、經由凸緣14〇固定於處理容㈣之底部 22c。並且，於石英鐘罩112之内部空間 熱器Π4與熱反射編6。因此，SiC加熱器114與H 構件116，與處理容器22之製程空間84隔離，不與製程空間 84之氣體接觸，而為不會產生污染之構成。 sic基板設置台118係被載置於與Sic加熱器ιΐ4相對之石 夬鐘罩112上，並可藉由高溫計119來測定溫度。該高溫計 119係藉由隨著SiC基板設置台118被加熱而產生之熱電效 果來測定SiC基板設置台118之溫度者，而於控制電路中， 由藉由高溫計119所檢測之溫度信號來推測被處理基板w 之溫度’再根據該推測溫度控制sic加熱器U4之發熱量。 另外，石英鐘罩112之内部空間in，如後述於處理容器 22之製程空間84減壓時，減壓系統作動並同時減壓以使與 製程空間84之壓力差變小。因此，石英鐘罩112不必考慮減 壓步驟時之壓力差而加大殼厚（例如3〇 mm左右），熱容量小 即可，也因此可提高加熱時之反應性。 底座110形成為圓盤狀，於中央具有穿插有保持構件12〇 O:\87\87876.DOC -24 - 1230401 之軸120d之中央孔142,而於内部則設置有在圓周方向延伸 而七成之冷卻水用之第1水路1 44。因底座1 1 〇為銘合金製， 其熱膨脹率雖大，但可藉由在第丨水路144流動冷卻水來冷 卻。 另外，凸緣140為組合介於底座110與處理容器22之底部 22c間之第1凸緣，與嵌合於第丨凸緣之内周之第二凸 、彖148之構成。於第丨凸緣146之内周面，係設置有在圓周方 向延伸而形成之冷卻水用之第2水路150。 上冷卻水供給部46所供給之冷卻水，係藉由在上述水路 144與150流動，冷卻由Sic加熱器114發熱所加熱之底座 與凸緣140 ’並抑制底座u〇與凸緣ι4〇之熱膨脹。 另外於底座11 〇下面设置有·連通有使冷卻水流入於水 路144之第1流入管路152之第i流入口 154，與連通有排出通 過水路144之冷卻水之流出管路156之第1流出口 158。此 外，於底座11 0下面之外周附近，在圓周方向設置有複數個 (例如8〜12處左右）用於穿插鎖緊於第1凸緣丨“之螺栓16〇之 安裝孔162。 另外，於底座110下面之半徑方向上之中間位置附近設置 有：包含測定SiC加熱器114之溫度用之熱電偶之溫度感應 器164,與供給電源至Sic加熱器114之電源纜線連接用端子 166a〜166f。又，在siC加熱器114形成有3個區域，而電源 纜線連接用端子166a〜166f則分別設置有提供電源至各區 域之+側端子、一側端子。 另外，於凸緣140下面設置有：連通有使冷卻水流入於水After Mb, it is sprayed into the process space 84 from the center of the injection hole 93 ~ 93. The gas in the process space 84 is sprayed from all nozzle plates extending from the front to the front 22a of the processing container 22 in the widthwise direction of the processing space to the entire area of the process space 84. The entire area flows at a specific flow rate (laminar flow) toward the rear 2 hole side of the processing container 22. In addition, on the side of the rear portion 22b of the processing container 22, since the rectangular exhaust port 74 extending in the widthwise direction of the rear portion 22b is opened, the gas in the process space 84 is 5L //; 11_backward 'according to a specific flow rate ( Laminar flow) exhausts toward the exhaust path. In addition, in this embodiment, since the flow rates of the two systems can be controlled, for example, the first quality controller 97a and the second quality controller 97b can also control different flow rates. Thereby, the gas flow rate (flow rate) supplied to the process space is set to be different, and the gas concentration distribution in the process space 84 can also be changed. In addition, different types of O: \ 87 \ 87876 DOC -23-1230401 can be supplied to the first quality controller 1 97a and the second quality controller 97b. For example, the first mass controller W can be used for the flow of nitrogen gas. Control ', and the flow rate of oxygen gas is controlled by the second quality controller. The gas used may be, for example, an oxygen-containing gas, a nitrogen-containing gas, or a rare gas. (2) Here, the structure of the heating part 24 is explained in full detail. FIG. 21 is a longitudinal sectional view showing an enlarged configuration of the heating section 24. Fig. 22 is an enlarged bottom view of the heating section 24. As shown in Figs. 21 and 22, the heating portion 24 is mounted on a base 110 made of Ming alloy, and the quartz bell cover 112 is mounted on the base portion 22c of the processing container via a flange 14. In addition, in the inner space of the quartz bell cover 112, the heater Π4 and the heat reflection braid 6 are provided. Therefore, the SiC heater 114 and the H member 116 are isolated from the process space 84 of the processing container 22 and do not come into contact with the gas in the process space 84, and have a structure that does not cause pollution. The sic substrate setting stage 118 is placed on the stone bell jar 112 facing the Sic heater 4 and the temperature can be measured by a pyrometer 119. The pyrometer 119 measures the temperature of the SiC substrate setting table 118 by the thermoelectric effect generated as the SiC substrate setting table 118 is heated. In the control circuit, the temperature is detected by the temperature signal detected by the pyrometer 119. The estimated temperature 'of the substrate w to be processed' is then used to control the amount of heat generated by the sic heater U4 based on the estimated temperature. In addition, when the internal space in of the quartz bell cover 112 is decompressed in the process space 84 of the processing container 22 as described later, the decompression system operates and decompresses simultaneously to reduce the pressure difference with the process space 84. Therefore, the quartz bell cover 112 does not need to increase the thickness of the case (for example, about 30 mm) in consideration of the pressure difference during the depressurization step, and the heat capacity is small, so the reactivity during heating can be improved. The base 110 is formed in a disc shape, and has a central hole 142 with a shaft 120d inserted through a holding member 12OO: \ 87 \ 87876.DOC -24-1230401 in the center, and 70% of which extends in the circumferential direction inside. The first water channel 1 44 of the cooling water. Since the base 1 10 is made of Ming alloy, although its thermal expansion rate is large, it can be cooled by flowing cooling water through the first water passage 144. In addition, the flange 140 is a combination of a first flange interposed between the base 110 and the bottom portion 22c of the processing container 22, and a second protrusion 彖 148 fitted to the inner periphery of the first flange. A second water path 150 for cooling water is formed on the inner peripheral surface of the first flange 146 and extends in the circumferential direction. The cooling water supplied by the upper cooling water supply unit 46 flows through the above-mentioned water paths 144 and 150 to cool the base and the flange 140 ′ heated by the heat generated by the Sic heater 114 and suppress the base u0 and the flange ι4〇. Thermal expansion. In addition, the i-th inlet 154 of the first inflow pipe 152 for cooling water to flow into the water passage 144 is provided below the base 11 and the first is connected to the outflow pipe 156 for the cooling water discharged through the water passage 144. Outlet 158. In addition, a plurality of mounting holes 162 (for example, about 8 to 12 locations) are provided in the circumferential direction near the outer periphery of the lower surface of the base 110 for the bolts 16 locked to the first flange 丨. In addition, A temperature sensor 164 including a thermocouple for measuring the temperature of the SiC heater 114 and a power cable connection terminal 166a to 166f for supplying power to the Sic heater 114 are provided near a middle position in a radial direction below the base 110. In addition, three areas are formed in the siC heater 114, and the power cable connection terminals 166a to 166f are provided with + side terminals and one side terminals for supplying power to each area. In addition, it is provided below the flange 140. Yes: Connected to allow cooling water to flow into the water

O:\87\87876.DOC -25- 1230401 路150之第2流入管路168之第2流入口 17〇，與連通有排出通 過水路150之冷卻水之流出管路ι72之第2流出口 174。 圖一 3係擴大顯示第2流入口 1 7 0，及第2流出口 1 7 4之安裝 構造之縱剖面圖。圖24係擴大顯示凸緣14〇之安裝構造之縱 剖面圖。 如0 2 3所示，於第1凸緣14 6係設置有可連通第2流入口 170之L子形之連通孔146a。該連通孔146&之邊緣部則被連 通至水路150。又，第2流出口 174亦以與上述第2流入口 17〇 相同之構成被連通至水路丨5〇。 由於水路150係在凸緣140之内部延伸形成於圓周方向， 故藉由冷卻凸緣140，亦間接地冷卻在第1凸緣146之階狀部O: \ 87 \ 87876.DOC -25- 1230401 The second inflow port 17 of the second inflow pipe 168 of the road 150 is connected to the second outflow port 174 of the outflow pipe ι72 which is connected to the cooling water discharged through the waterway 150. . Fig. 3 is a longitudinal sectional view showing the enlarged installation structure of the second inflow port 170 and the second outflow port 174. Fig. 24 is a longitudinal sectional view showing the mounting structure of the flange 14 in an enlarged manner. As shown in 0 2 3, the first flange 14 6 is provided with an L-shaped communication hole 146 a which can communicate with the second inlet 170. The edge portion of the communication hole 146 & is connected to the water path 150. In addition, the second outflow port 174 is also connected to the water path 50 in the same configuration as the second inflow port 170. Since the water path 150 is formed in the circumferential direction extending inside the flange 140, the cooling flange 140 also indirectly cools the stepped portion of the first flange 146.

膨脹。 不’於石英鐘罩112之突出部112a下面， 如圖23及圖24所示 在圓周方向於特定間隔設置有複數個位置決定孔178。 178。該位Swell. Below the protruding portion 112a of the quartz bell cover 112, as shown in Figs. 23 and 24, a plurality of position determination holes 178 are provided at a predetermined interval in the circumferential direction. 178. The bit

許間隙之份之底座1丨〇之熱膨脹。 置決定孔178係歲合被螺入於底座11〇上面之栓176之孔 熱膨脹率大之底座1 i 〇，力主你+人U…Allows for thermal expansion of the base 1 〇. The setting decision hole 178 is a hole of the bolt 176 screwed onto the base 11, and the base with a large thermal expansion rate 1 i 〇, power you + person U ...

O:\87\87876.DOC -26- 1230401 石英麵罩112之突出部U2a下面，係藉由被安裝於底座 Π0上面之密封構件（〇環）18〇而密封，石英鐘罩U2之突出 部112a上面，則藉由被安裝於第1凸緣ι46之密封構件（〇 環）1 82而密封。 此外，第1凸緣146與第2凸緣148之上面，係藉由被安裝 於處理容器22之底部22〇之密封構件（〇環）184，186所密封。 而第2凸緣148之下面，則是藉由被安裝於底座11〇上面之密 封構件（〇環）188所密封。 如此，由於在底座110與凸緣14〇之間及凸緣14〇與處理容 器22之底部22c之間成為雙重密封構造，無論其中何者的密 封構件有破損時亦可由其他密封構件來密封住，故更能提 鬲處理谷器22與加熱部24間密封構造之信賴性。 例如，石英鐘罩112破裂時或突出部丨丨2a產生裂痕時，可 由被配置於較突出部112a更外側之密封構件丨8〇，確保石英 鐘罩112内部之氣密性，並阻止處理容器22内之氣體流出至 外部。 或者，即使是接近加熱部24之密封構件18〇，182產生劣化 時，亦可藉由安裝於較加熱部24更為遠遠之位置處之外側 密封構件186，188,維持處理容器22與底座⑽間之密封性 月b而，故亦能防止因長年變化之氣體漏洩。 如圖2丨所示，SiC加熱器114於石英鐘罩ιΐ2之内部空間 in中，係被載置於熱反射構件116之上面，且藉由立在底 座110上面之複數個夾鉗機構⑽，而被保持於特定高度。 該失钳機構190係具有：抵接於熱反射構件116下面之外O: \ 87 \ 87876.DOC -26- 1230401 The underside of the protruding portion U2a of the quartz mask 112 is sealed by a sealing member (0 ring) 18o mounted on the upper surface of the base Π0, and the protruding portion 112a of the quartz bell cover U2 is sealed. The upper surface is sealed by a sealing member (o-ring) 1 82 attached to the first flange 46. The upper surfaces of the first flange 146 and the second flange 148 are sealed by sealing members (o-rings) 184, 186 attached to the bottom 22 of the processing container 22. The lower surface of the second flange 148 is sealed by a sealing member (o-ring) 188 mounted on the upper surface of the base 11o. In this way, since the double sealing structure is formed between the base 110 and the flange 140 and between the flange 14 and the bottom 22c of the processing container 22, no matter which of the sealing members is damaged, it can be sealed by other sealing members. Therefore, the reliability of the sealing structure between the trough device 22 and the heating portion 24 can be further improved. For example, when the quartz bell cover 112 is broken or a protrusion 2a is formed, a sealing member arranged outside the protrusion 112a may be used to ensure the airtightness inside the quartz bell cover 112 and prevent the inside of the processing container 22 The gas flows out. Alternatively, even if the sealing members 180, 182 close to the heating section 24 are degraded, the outer sealing members 186, 188 can be installed at a position farther from the heating section 24 to maintain the processing container 22 and the base. Because of the tightness b between months, it can also prevent gas leakage due to changes over time. As shown in FIG. 2 丨, the SiC heater 114 is placed on the heat reflecting member 116 in the internal space in of the quartz bell cover ι2, and by a plurality of clamping mechanisms 立 standing on the base 110, and Is kept at a certain height. This unclamp mechanism 190 has abutment against the lower surface of the heat reflecting member 116

O:\87\87876.DOC •27- 1230401 间19〇a ’貫通外筒190a並抵接於sic加熱器114上面之軸 、及對著軸1 90b擠壓外筒190a之螺旋彈簧1 92。 並且，由於夾鉗機構190之構成係以螺旋彈簧192之彈簧 ^夾住sic加#器114與熱反射構件116，故例如即使在搬運 才有所振動，SiC加熱器114與熱反射構件116亦能保持不會 接觸到石英^罩112。另外，因上述螺旋彈簧192之彈菁力 為、工#保持作用著，故亦可防止因熱膨脹而引起之螺絲鬆 弛，SiC加熱器114與熱反射構件116可被保持於不會鬆動之 安定狀態。 另外，各夾鉗機構190係構成為可對底座110調整SiC加熱 為114與熱反射構件116之高度位置於任意位置，藉由調整 谡數個夾鉗機構190之高度位置，能保持於Sic加熱器丨14與 熱反射構件116之水平。 此外，於石英鐘罩112之内部空間113中安裝有：sic加熱 器114之各端子，與用於電連接被穿插於底座110之電源纜 線連接用端子166a〜166f之連接構件194a〜194f(但，於圖21 圖不有連接構件194a、194c)。 圖25係擴大顯示夾鉗機構丨9〇上端部之安裝構造之縱剖 面圖。 如圖25所示，夾鉗機構19〇係鎖緊被栓入於穿插於熱反射 構件116之穿插孔116a與SiC加熱器114之穿插孔114e之軸 19 Ob上端之螺母193,經由墊片195於軸方向擠壓L字形墊片 197,199並挾持SiC加熱器114。O: \ 87 \ 87876.DOC • 27- 1230401 1919a ’A shaft that penetrates the outer tube 190a and abuts on the sic heater 114, and a coil spring 192 that presses the outer tube 190a against the shaft 1 90b. In addition, since the clamp mechanism 190 is configured to sandwich the sic heater 114 and the heat reflection member 116 with the spring ^ of the coil spring 192, for example, the SiC heater 114 and the heat reflection member 116 also vibrate even during transportation. It can be kept from touching the quartz cover 112. In addition, because the elastic force of the coil spring 192 is maintained, the screw can be prevented from being loosened due to thermal expansion, and the SiC heater 114 and the heat reflection member 116 can be maintained in a stable state without loosening. . In addition, each clamp mechanism 190 is configured to adjust the SiC heating of the base 110 to the height position of 114 and the heat reflecting member 116 at arbitrary positions. By adjusting the height positions of the plurality of clamp mechanisms 190, it can be maintained at Sic heating. The level of the device 14 and the heat reflecting member 116 is horizontal. In addition, in the inner space 113 of the quartz bell cover 112, each terminal of the sic heater 114 and connection members 194a to 194f for electrically connecting the power cable connection terminals 166a to 166f inserted through the base 110 (but (The connection members 194a, 194c are not shown in FIG. 21). Fig. 25 is a longitudinal sectional view showing the mounting structure of the upper end portion of the clamp mechanism 90 in an enlarged manner. As shown in FIG. 25, the clamp mechanism 19 is locked to a nut 193 at the upper end of the shaft 19 Ob inserted through the insertion hole 116a of the heat reflecting member 116 and the insertion hole 114e of the SiC heater 114 through a pad. The sheet 195 presses the L-shaped spacers 197 and 199 in the axial direction and holds the SiC heater 114.

SiC加熱器114 ’於穿插孔U4e插入有L字形之塾片SiC heater 114 'with L-shaped cymbal inserted into U4e insertion hole

O:\87\87876.DOC -28- 1230401 197、199之圓筒部197a、199a，而於圓筒部197a、19%内 則牙插有夹鉗機構19〇之軸190b。並且，l字形墊片197、199 之突出部197b、199b係抵接於SiC加熱器114之上面、下面。 夾鉗機構190之軸190b，係藉由上述螺旋彈簧192之彈簧 力而被施予向下方之力，且夾鉗機構19〇之外筒19〇a藉由上 述螺旋彈簧192之彈簧力而被施予向上方之力。如此，使螺 旋彈更1 92之彈黃力產生做為夾鉗力之作用，故熱反射構件 11 6^4 SiC加熱器114安定地被保持著，可防止因搬運時之振 動所引起之破損。O: \ 87 \ 87876.DOC -28- 1230401 The cylindrical parts 197a, 199a of 197, 199, and within the cylindrical parts 197a, 19%, the shaft 190b of the clamp mechanism 19 is inserted into the teeth. In addition, the protruding portions 197b and 199b of the I-shaped spacers 197 and 199 are in contact with the upper and lower surfaces of the SiC heater 114. The shaft 190b of the clamp mechanism 190 is applied with a downward force by the spring force of the coil spring 192, and the outer mechanism 19o of the clamp mechanism 19o is clamped by the spring force of the coil spring 192. Give upward force. In this way, the spiral force of the helical bomb is increased to 1 92. As a clamping force, the heat reflecting member 11 6 ^ 4 SiC heater 114 is stably held, which can prevent damage caused by vibration during transportation. .

SiC加熱器114之穿插孔1146，係較L字形之墊片ι97&、 197b之圓筒部197c、197d之口徑大，故設有間隙。因此， 在因SiC加熱器114之發熱而產生之熱膨脹，使穿插孔U4e 與軸190b相對地變位時，穿插孔1146可在抵接[字形墊片 197、199之突出部1971)、199b之狀態下於水平方向錯位， 防止隨著熱膨脹之應力的發生。 (3)在此，針對SiC加熱器114說明。 如圖26所不’ SiC加熱器114係由：中心部形成為圓形狀 之第1發熱部114a，及包圍住第1發熱部1丨4a之外周而形成 為圓弧狀之第2、第3發熱部114b、114c所構成。又，於Sic 加熱器114中心係設置有：被穿插保持構件12〇之轴之 穿插孔114d。 發熱部114a〜114c係並列地連接至發熱控制電路196，再 由溫度調整器198控制於所設定之任意溫度。於發熱控制電 路196中，係藉由控制由電源200供給至發熱部114卜114〇之 O:\87\87876.DOC -29- 1230401 電壓’來控制自SiC加熱器114所放射之發熱量。 另外’若因發熱部n4a〜114c之容量不同則會增大電源 200之負擔’故於本實施例中，可設定使各發熱部114a〜11 4c 之谷里（2 KW)成為相同之電阻。 發熱控制電路196係可選擇：控制方法I，同時使發熱部 114a〜114c通電並發熱；控制方法π，配合被處理基板冒之 溫度分佈狀況，使中心之第i發熱部丨14a，或外側之第2、 第3¾熱。M 14b、114c之其中一者發熱；控制方法hj，配合 被處理基板w之溫度變化，同時使發熱部U4a〜114c發熱， 及使第1發熱部114a或第2、第3發熱部114b、114c之任一發 熱。 被處理基板W在藉由上述保持構件120保持之狀態，邊旋 轉邊由各發熱部114a〜11 4c發熱而被加熱之際，會因外周側 與中心部份之溫度差而使周邊部份朝上方彎翹。但，於本 實施例中，由於SiC加熱器114係經由熱傳導率佳之Sic基板 没置台11 8來加熱被處理基板w，故被處理基板w全體是以 來自SiC加熱器114之熱來加熱，可將被處理基板w之周邊 部份與中心部份之溫度差抑制到最小，以防止被處理基板 W的彎輕。 (4 )在此’泮細3兄明有關112石英鐘罩之構成。 圖27A係顯示石英鐘罩112之構造之俯視圖。圖27B係顯 示石英鐘罩112之構造之縱剖面圖。圖28A為從上方所見石 英鐘罩112之構造之立體圖；圖28B為從下方所見石英鐘罩 O:\87\87876.DOC -30- 1230401 112之構造之立體圖。 如圖27A、圖27B與圖28A、圖28B所示，石英鐘罩I〗]由 透明石英所形成’其係具有：於前述突出部丨12&上方形成 之圓筒部112b、覆蓋圓筒部112b上方之頂板112c、延伸於 較頂板112c中央之下方之中空部112d、及為補強被橫向架 設於突出部112a所形成之開口之樑部ll2e。 由於突出部112a與頂板112c承受荷重，故形成為較圓筒 部112b為厚。又，石英鐘罩112因延伸於縱方向之中空部 112d與延伸於橫方向之梁部U2e在内部交叉，故可提高上 下方向與半徑方向之強度。 另外，於梁部112e之中間位置可結合中空部1 i2d之下端 部份，而中空部112d内之穿插孔112f亦貫通梁部112e。於該 穿插孔112f可穿插保持構件120之轴120d。 並且’於石英鐘罩112之内部空間113插入有前述Sic加熱 器114與熱反射構件116。又，雖SiC加熱器114與熱反射構 件116形成為圓盤狀，但為可分割成圓弧狀之構成，可避開 梁部112e並於被插入内部空間in後組裝。 此外，於石英鐘罩112之頂板112c有3處（120度間隔）突 出，其係為支持SiC基板設置台118之輪轂112g〜112i。因 此，由輪轂112g〜112i所支持之SiC基板設置台118，係被載 置成稍微自頂板112c突出之狀態。因此，即使處理容器22 之内部壓力有變化，或因產生溫度變化之SiC基板設置台 11 8變動至下方時，亦可防止接觸到頂板11 2c。 另外，石英鐘罩112之内部壓力，係如後述為進行藉由減 O:\87\87876.DOC -31 - 1230401 [系、、充進行排氣流量的控制，使與處理容器22之製程空間84 之壓力差成為50 Torr以下，故可將石英鐘罩112之厚度製作 成比車乂薄。因此，由於可將頂板112c之厚度做成薄約6〜1 0 mm 文使彳于石英鐘罩112之熱容量變小並可藉由提高加熱 時之熱傳導效率提昇反應性。另外，本實施例之石英鐘罩 Π2 ’係設計成具有可承受1〇〇 T〇rr壓力之強度。 圖29係顯示減壓系統之排氣系統構成之系統圖。 如圖29所示，處理容器22之製程空間84，係如前所述， 閥48a打開後，經由被連通至排氣口74之排氣路徑32，藉由 渦輪分子幫浦50之吸引力而減壓。此外，被連接至渦輪分 子幫浦5〇之排氣口之真空管路51下游，連通至吸引被排氣 氣體之幫浦（MBP)201。 石英鐘罩112之内部空間i 13係經由排氣管路2〇2而被連 接至分流管路51a，而由旋轉驅動部28之外殼122所劃分成 之内部空間124，則經由排氣管路204被連接至分流管路 51a ° 排氣管路2 0 2係设置有·測定内部空間11 3壓力之壓力計 205、及於石英鐘罩112之内部空間1 π減壓之際會打開之閥 2 0 ό。又’於分流管路5 1 a，如前述係設置有閥4 8 b，且設有 分流閥48b之分歧管路208。而於該分歧管路208設有：在減 壓步驟之初期階段所打開之閥2 10、及為能較閥48b更集中 流量之可變隔膜2 11。 另外，於渦輪分子幫浦50之排氣側設有··開關用之閥 212、測定排氣側之壓力之壓力計214。並且，於渦輪軸清 O:\87\87876.DOC -32- 1230401 除用之N2線連通至滿輪分子幫浦5 0之渴輪管路216上設置 有：逆止閥218、隔膜220及閥222。 另外’上述閥206、2丨0、212、222係包含電磁閥，依據 來自控制電路之控制信號而打打開。 在如上述所構成之減壓系統中，於進行處理容器22、石 英知罩11 2與旋轉驅動部2 8之減壓步驟時，並非一口氣地減 壓，而是階段地減壓，使其漸漸地接近真空而減壓。 首先，以打開被設置於石英鐘罩112之排氣管路2〇2之閥 2〇6，使石英鐘罩【12之内部空間113與製程空間料之間經由 排氣路徑32成為連通狀態，進行壓力之均一化。藉此，使 仔在減壓步驟之開始階段之石英鐘罩1 1 2之内部空間1 1 3與 製程空間84間之壓力差變小。 其次’使被設置於上述分歧管路208之閥210打開，由可 變隔膜211進行被集中之小流量之減壓。之後，使被設於分 流管路5 1 a之閥48b打開，並階段性地增大排氣流量。 另外’比較由壓力計205所測定之石英鐘罩112之壓力， 與由感應器單元85之壓力計85a〜85c所測定之製程空間84 之壓力，當兩壓力差為5〇 Torr以下時，即令閥48b打開。藉 此’於減壓步驟，緩和作用於石英鐘罩1丨2之内外之壓力 差’並使不需要之應力不會作用於石英鐘罩112以進行減壓 步驟。 並且’於經過特定時間後使閥48a打開，並增大潤輪分子 幫浦50之吸引力所造成之排氣流量，減壓處理容器22、石 英鐘罩112與旋轉驅動部28之内部直到變為真空為止。The insertion hole 1146 of the SiC heater 114 is larger in diameter than the cylindrical portions 197c and 197d of the L-shaped gaskets 97 & and 197b, so a gap is provided. Therefore, when the through-hole U4e is displaced relative to the shaft 190b due to the thermal expansion generated by the heat generated by the SiC heater 114, the through-hole 1146 can abut on the [protrusions of the letter-shaped gaskets 197 and 199], In the state of 199b, it is horizontally displaced to prevent the occurrence of stress due to thermal expansion. (3) Here, the SiC heater 114 will be described. As shown in FIG. 26, the SiC heater 114 is composed of a first heat generating portion 114a formed in a circular shape at the center portion, and second, third, and third portions formed in an arc shape surrounding the outer periphery of the first heat generation portion 1 丨 4a. The heat generating sections 114b and 114c are configured. Further, a center of the Sic heater 114 is provided with a through hole 114d through which the axis of the holding member 12o is inserted. The heat generating sections 114a to 114c are connected in parallel to the heat generating control circuit 196, and then controlled by the temperature adjuster 198 to an arbitrary set temperature. In the heat generation control circuit 196, the amount of heat emitted from the SiC heater 114 is controlled by controlling the O: \ 87 \ 87876.DOC -29-1230401 voltage supplied from the power supply 200 to the heat generating section 114 and 114. In addition, 'the load on the power supply 200 will increase if the capacity of the heating sections n4a to 114c is different'. In this embodiment, the valleys (2 KW) of the heating sections 114a to 11 4c can be set to the same resistance. The heating control circuit 196 is optional: control method I, while heating the heating portions 114a to 114c and generating heat; control method π, in accordance with the temperature distribution of the substrate being processed, makes the i-th heating portion 14a in the center, or the outside 2nd, 3¾th heat. One of M 14b, 114c generates heat; the control method hj, in accordance with the temperature change of the substrate w to be processed, simultaneously heats the heating portions U4a to 114c, and causes the first heating portion 114a or the second and third heating portions 114b, 114c Any fever. When the substrate W to be processed is heated by the heat generating portions 114a to 11c while being held by the holding member 120, the peripheral portion faces the central portion due to the temperature difference between the outer peripheral side and the central portion. Warped up. However, in this embodiment, since the SiC heater 114 is used to heat the substrate w to be processed via the Sic substrate placement stage 118 having a high thermal conductivity, the entire substrate w to be processed is heated by the heat from the SiC heater 114. The temperature difference between the peripheral portion and the central portion of the substrate w to be processed is minimized to prevent the substrate W from being bent. (4) Here's a detailed description of the structure of the 112 quartz bell. FIG. 27A is a plan view showing the configuration of the quartz bell cover 112. FIG. Fig. 27B is a longitudinal sectional view showing the structure of the quartz bell cover 112. Fig. 28A is a perspective view of the structure of the quartz bell jar 112 seen from above; Fig. 28B is a perspective view of the structure of the quartz bell jar O: \ 87 \ 87876.DOC -30-1230401 112 seen from below. As shown in FIG. 27A, FIG. 27B, and FIG. 28A and FIG. 28B, the quartz bell cover I] is formed of transparent quartz, and it has: a cylindrical portion 112b formed on the aforementioned protruding portion 12 & The upper top plate 112c, the hollow portion 112d extending below the center of the top plate 112c, and the beam portion 112e which is laterally erected on the opening formed by the protruding portion 112a. Since the protruding portion 112a and the top plate 112c receive a load, they are formed thicker than the cylindrical portion 112b. In addition, since the quartz bell cover 112 extends in the longitudinal hollow portion 112d and the beam portion U2e extending in the horizontal direction intersects internally, the strength in the vertical direction and the radial direction can be increased. In addition, the lower end portion of the hollow portion 1 i2d can be combined at the middle position of the beam portion 112e, and the insertion hole 112f in the hollow portion 112d also penetrates the beam portion 112e. The shaft 120d of the holding member 120 can be inserted into the insertion hole 112f. Further, the Sic heater 114 and the heat reflecting member 116 described above are inserted into the inner space 113 of the quartz bell cover 112. Also, although the SiC heater 114 and the heat reflecting member 116 are formed in a disc shape, they can be divided into a circular arc shape, and can be assembled after being inserted into the internal space in without the beam portion 112e. In addition, the top plate 112c of the quartz bell cover 112 is protruded at three places (120-degree intervals), and is a hub 112g to 112i for supporting the SiC substrate mounting stand 118. Therefore, the SiC substrate mounting table 118 supported by the hubs 112g to 112i is placed so as to protrude slightly from the top plate 112c. Therefore, even if the internal pressure of the processing container 22 is changed, or the SiC substrate setting table 11 8 is changed downward due to a temperature change, the top plate 11 2c can be prevented from being contacted. In addition, the internal pressure of the quartz bell cover 112 is to reduce the O: \ 87 \ 87876.DOC -31-1230401 [system, as described later, and control the exhaust flow rate, so that the processing space of the processing container 22 is 84. Since the pressure difference is 50 Torr or less, the thickness of the quartz bell cover 112 can be made thinner than that of the car. Therefore, since the thickness of the top plate 112c can be made as thin as about 6 to 10 mm, the heat capacity of the quartz bell cover 112 can be reduced, and the reactivity can be improved by increasing the heat conduction efficiency during heating. In addition, the quartz bell cover Π2 'of this embodiment is designed to have a strength capable of withstanding a pressure of 100 Torr. Fig. 29 is a system diagram showing the structure of an exhaust system of a pressure reduction system. As shown in FIG. 29, the process space 84 of the processing container 22 is as described above. After the valve 48a is opened, the exhaust path 32 connected to the exhaust port 74 is opened by the attraction of the turbo molecular pump 50. stress reliever. In addition, a vacuum line 51 connected to the exhaust port of the turbo molecular pump 50 is connected to a pump (MBP) 201 that sucks exhaust gas. The internal space i 13 of the quartz bell cover 112 is connected to the branch line 51 a via the exhaust line 202, and the internal space 124 divided by the housing 122 of the rotary driving section 28 is passed through the exhaust line 204 Connected to the branch line 51a ° Exhaust line 2 0 2 is provided with a pressure gauge 205 that measures the pressure in the internal space 11 3 and a valve 2 that opens when the internal space 1 of the quartz bell cover 112 is depressurized 2 0 . Further, on the branch line 5 1 a, the branch line 208 provided with the valve 4 8 b and the branch valve 48b is provided as described above. The branch line 208 is provided with a valve 2 10 which is opened in the initial stage of the pressure reducing step, and a variable diaphragm 2 11 which can concentrate the flow rate more than the valve 48b. In addition, on the exhaust side of the turbo molecular pump 50, a valve 212 for opening and closing, and a pressure gauge 214 for measuring the pressure on the exhaust side are provided. In addition, on the turbine shaft clear O: \ 87 \ 87876.DOC -32-1230401, the N2 line that is used to connect to the full-wheel molecular pump 50 0 thirsty wheel pipeline 216 is provided with a check valve 218, a diaphragm 220 and Valve 222. In addition, the above-mentioned valves 206, 2 丨 0, 212, and 222 include solenoid valves, and are opened according to a control signal from a control circuit. In the decompression system configured as described above, when the decompression steps of the processing container 22, the quartz cover 112, and the rotary driving unit 28 are performed, the pressure is not depressurized at one go, but is depressurized in stages to make it Gradually approached the vacuum and reduced the pressure. First, by opening the valve 20 of the exhaust pipe 200 provided in the quartz bell cover 112, the quartz bell cover [12's internal space 113 and the process space material are connected to each other via the exhaust path 32, and pressure is applied. Uniformity. Thereby, the pressure difference between the internal space 1 1 3 of the quartz bell cover 1 1 2 and the process space 84 at the beginning of the decompression step becomes small. Secondly, the valve 210 provided in the branch line 208 is opened, and the variable diaphragm 211 is used to perform pressure reduction with a small flow rate concentrated. Thereafter, the valve 48b provided in the branch line 5 1 a is opened, and the exhaust flow rate is increased stepwise. In addition, 'compare the pressure of the quartz bell cover 112 measured by the pressure gauge 205 with the pressure of the process space 84 measured by the pressure gauges 85a ~ 85c of the sensor unit 85. When the pressure difference is less than 50 Torr, the valve is made 48b opens. By this, in the decompression step, the pressure difference acting on the inside and outside of the quartz bell cover 1 丨 2 is relaxed, and unnecessary stress is not applied to the quartz bell cover 112 to perform the decompression step. And 'the valve 48a is opened after a certain time has elapsed, and the exhaust gas flow rate caused by the attraction of the lubricating molecular pump 50 is increased, and the inside of the pressure reduction processing container 22, the quartz bell cover 112, and the rotation driving portion 28 is changed to Until the vacuum.

O:\87\87876.DOC -33 - 1230401 (5)在此’針對上述保持構件12 〇之構成做說明。 圖30A係顯示保持構件120構成之俯視圖；圖3〇b係顯示 保持構件12 0構成之側面圖。 如圖30A、圖30B所示，保持構件12〇係由支持被處理基 板W之臂部120a〜120c，及可結合臂部12〇a〜12〇c之軸12〇d 所構成。臂部120a〜120c為防止於製程空間84之污染，且為 了不遮蔽住來自SiC基板設置台1 is之熱，而由透明石英所 形成，以軸120d之上端為中心軸而以12〇度間隔在水平方向 成放射狀延伸。 此外，於臂部120a〜120c之長方向之中間位置，突出有抵 接於被處理基板w下面之輪轂120e〜120g。因此，被處理基 板W係由其抵接輪轂12 〇 e〜12 0 g之3點所支持。 如此，由於保持構件12〇為以點接觸支持被處理基板貿之 構成，故對SiC基板設置台118可僅以些許之距離保持被處 理基板W於離開之位置。又，Sic基板設置台118與被處理 基板w之離開距離，例如為丨〜20 mm，較佳為3〜1〇 mm左右。 即’被處理基板w成為以浮在Sic基板設置台U8上方之 狀悲碇轉，比起直接被載置於Sic基板設置台118者，來自O: \ 87 \ 87876.DOC -33-1230401 (5) Here, the structure of the holding member 12 will be described. Fig. 30A is a plan view showing the structure of the holding member 120; Fig. 30b is a side view showing the structure of the holding member 120. As shown in FIGS. 30A and 30B, the holding member 12o is composed of arm portions 120a to 120c supporting the substrate W to be processed, and an axis 120d that can be combined with the arm portions 120a to 120c. The arm portions 120a to 120c are formed of transparent quartz to prevent contamination in the process space 84 and not to shield the heat from the SiC substrate setting table 1 is. The upper end of the axis 120d is used as the central axis at intervals of 120 degrees. It extends radially in the horizontal direction. Further, at the middle positions in the longitudinal direction of the arm portions 120a to 120c, hubs 120e to 120g abutting on the lower surface of the substrate to be processed w are protruded. Therefore, the substrate W to be processed is supported by the three points at which it abuts the hub 12 o e ~ 120 g. As described above, since the holding member 120 is configured to support the substrate to be processed with point contact, the SiC substrate mounting table 118 can hold the substrate to be processed at a distant position by a slight distance. The distance between the Sic substrate setting base 118 and the substrate to be processed w is, for example, 20 mm to 20 mm, and preferably about 3 to 10 mm. That is, the to-be-processed substrate w wanders in a floating state above the Sic substrate setting table U8, compared with those directly placed on the Sic substrate setting table 118.

Sic基板設置台118之熱可更均一地放射，不易產生周邊部 份與中心部份之溫度差，亦可防止因溫度差而產生之被處 理基板W之彎翹。 因被處理基板W係被保持在自Sic基板設置台U8離開之 位置’故即使因溫度差而產生彎翹，亦不會接觸到siC基板 a又置台1 1 8，而隨著定常時之溫度均一化，可恢復至原來之The heat of the Sic substrate setting stage 118 can be more uniformly radiated, which makes it difficult to generate a temperature difference between the peripheral portion and the center portion, and also prevents warping of the processed substrate W due to the temperature difference. Since the substrate W to be processed is held at a position separated from the Sic substrate setting table U8, even if warping occurs due to a temperature difference, it will not contact the siC substrate a and set the table 1 1 8 again, and with the constant temperature Homogenization, can be restored to the original

O:\87\87876.DOC -34- 1230401 水平狀態。 另外，保持構件120之軸120d係以不透明石英形成為棒 狀，牙插於上述SiC基板設置台ι18與石英鐘罩112之穿插孔 112f並延伸於下方。如此，雖保持構件12〇為在製程空間84 内保持被處理基板W者，但因係由石英所形成，故亦無須 擔心由金屬製品所造成之污染。 (6)在此，洋細說明有關上述旋轉驅動部以之構成。 圖3 1係顯示被配置於加熱部2 4下方之旋轉驅動部2 8之構 成之縱剖面圖。圖32則擴大顯示旋轉驅動部28之縱剖面圖。 如圖31與圖32所示，在加熱部24之底座11〇下方鎖緊有用 於支持旋轉驅動部28之托架230。於該托架23〇係設有··旋 轉位置檢測機構232，及托架冷卻機構234。 此外，於托架230下方插入有穿插固定了保持構件12〇之 軸120d之陶瓷轴126，可藉由螺栓24〇來固定保持了可轉動 地支持陶瓷軸126之陶瓷軸承236、237之固定側之外殼122。 於外殼122内，因旋轉部份係由陶瓷軸126與陶瓷軸承 236、237所構成，故可防止金屬之污染。 外殼122係具有：穿插有螺栓24〇之凸緣242，及延伸形成 於凸、、彖23 8下方之有底向狀之間隔壁244。於間隔壁244之外 周面，設置有可連通前述減壓系統之排氣管路2〇4之排氣孔 246’而外殼U2之内部空間124之氣體，係於前述減壓系統 之減壓步驟中，被排氣而減壓。因此，可防止製程空間84 内之氣體沿著保持構件120之軸120d流出於外部。 此外，於内部空間124收容有磁鐵聯結器13〇之從動側磁 O:\87\87876.DOC -35- 1230401 鐵248。該從動侧磁鐵248為防止污染，係由在陶竟軸126外 周所嵌合之磁鐵罩250所覆蓋住，並安裝成不會與内部空間 124之氣體接觸。 磁鐵罩2 5 0係由銘合金形成為環狀之護罩，在内部形成有 收谷用之環狀空間。收容成内部不會搖晃之狀態。另外， 磁鐵罩2 5 0之接合部份係以電子射束溶接成無間隙結合，係 不會如錫焊般地流出銀而造成污染地加工。 此外，於外殼122之外周，嵌合地設置有形成為筒狀之氛 圍側旋轉部252，經由軸承254、255可旋轉地支持著。並且， 於氛圍側旋轉部252之内周，安裝有磁鐵聯結器13〇之驅動 側磁鐵256。 氛圍側旋轉部252下端部252a係經由傳達構件257可結合 馬達128之驅動軸128a。因此，馬達128之旋轉驅動能量， 係經由被設在氛圍側旋轉部252之驅動側磁鐵256，與被設 在外殼122内部之從動側磁鐵248間之磁力，被傳達至陶莞 軸126並傳達到保持構件120與被處理基板w。 另外，於氛圍側旋轉部252之外側，安裝有檢測氛圍側旋 轉部252旋轉之旋轉檢測單元258。該旋轉檢測單元258係由 被女裝在氛圍側旋轉部252下端部外周之圓盤狀之狹縫板 260、261，與光學性地檢測狹縫板26〇、261之旋轉量之光 斷續器262、263所構成。 光斷續器262、263係由軸承架264被固定在固定側之外殼 122並且於旋轉檢測單元258中，因由一對的光斷續器 262、263可同時檢測出配合旋轉速度之脈衝，故藉由比較O: \ 87 \ 87876.DOC -34- 1230401 horizontal state. In addition, the axis 120d of the holding member 120 is formed in a rod shape from opaque quartz, and teeth are inserted below the SiC substrate mounting table 18 and the insertion hole 112f of the quartz bell cover 112 and extend downward. In this way, although the holding member 120 holds the substrate W to be processed in the process space 84, since it is formed of quartz, there is no need to worry about contamination caused by metal products. (6) Here, the details of the configuration of the above-mentioned rotation driving unit will be described in detail. Fig. 31 is a longitudinal cross-sectional view showing the structure of the rotation driving portion 28 arranged under the heating portion 24. FIG. 32 is an enlarged longitudinal sectional view of the rotation driving section 28. As shown in Figs. 31 and 32, the bracket 230 for supporting the rotary driving portion 28 is locked under the base 11 of the heating portion 24. The bracket 23 is provided with a rotation position detection mechanism 232 and a bracket cooling mechanism 234. In addition, a ceramic shaft 126 through which the shaft 120d of the holding member 120 is inserted and fixed is inserted below the bracket 230, and the fixed side of the ceramic bearings 236 and 237 that rotatably supports the ceramic shaft 126 can be fixed by a bolt 24o.之 壳 122。 The shell 122. In the housing 122, since the rotating portion is constituted by the ceramic shaft 126 and the ceramic bearings 236 and 237, metal contamination can be prevented. The housing 122 is provided with a flange 242 with bolts 24 interposed therebetween, and a bottom-shaped partition wall 244 extending below the projections 彖 238. On the outer peripheral surface of the partition wall 244, a gas is provided which can communicate with the exhaust hole 246 'of the exhaust pipe 204 of the decompression system and the internal space 124 of the housing U2, which is the decompression step of the decompression system. In the middle, it is exhausted and decompressed. Therefore, the gas in the process space 84 can be prevented from flowing to the outside along the axis 120 d of the holding member 120. In addition, the driven side magnetic O: \ 87 \ 87876.DOC -35-1230401 iron 248 is housed in the internal space 124. The driven-side magnet 248 is covered by a magnet cover 250 fitted on the periphery of the ceramic shaft 126 to prevent contamination, and is installed so as not to contact the gas in the internal space 124. The magnet cover 250 is a ring-shaped cover made of a metal alloy, and a ring-shaped space for harvesting is formed inside. Contained in a state where it will not shake. In addition, the joint portion of the magnet cover 250 is welded with an electron beam to form a gap-free connection, and does not flow out of silver like soldering to cause contamination. In addition, an outer peripheral side rotating portion 252 formed in a cylindrical shape is fitted on the outer periphery of the housing 122 and is rotatably supported by bearings 254 and 255. A driving-side magnet 256 of the magnet coupler 13 is attached to the inner periphery of the atmosphere-side rotating portion 252. The lower end portion 252a of the atmosphere-side rotating portion 252 is connected to the drive shaft 128a of the motor 128 via the transmission member 257. Therefore, the rotational driving energy of the motor 128 is transmitted to the Taowan shaft 126 via the magnetic force between the driving-side magnet 256 provided in the atmosphere-side rotating portion 252 and the driven-side magnet 248 provided inside the housing 122. It is conveyed to the holding member 120 and the to-be-processed substrate w. Further, a rotation detection unit 258 for detecting the rotation of the atmosphere-side rotating portion 252 is mounted outside the atmosphere-side rotating portion 252. This rotation detection unit 258 is discontinuously formed by the disc-shaped slit plates 260 and 261 on the outer periphery of the lower end portion of the atmosphere-side rotating portion 252 by the women's clothing, and the light that optically detects the rotation amount of the slit plates 26 and 261 is discontinuous. Device 262,263. The photo interrupters 262 and 263 are fixed to the housing 122 on the fixed side by the bearing frame 264 and are included in the rotation detection unit 258. Since a pair of photo interrupters 262 and 263 can simultaneously detect pulses matching the rotation speed, By comparison

O:\87\87876.DOC -36- 1230401 兩脈衝能提高旋轉檢測精密度。O: \ 87 \ 87876.DOC -36- 1230401 Two pulses can improve the accuracy of rotation detection.

圖33A係顯示托架冷卻機構234構成之橫剖面圖’圖33B 則顯示托架冷卻機構234構成之側面圖。 如圖33A、圖33B所示，托架冷卻機構234在托架23〇之内 部，形成有於圓周方向延伸之冷卻水用之水路23(^。並且， 於水路230a之一端連通有冷卻水供給孔23〇b，而在水路 . 23 0a之另一端則連通有冷卻水供給排出孔23〇c。 自冷卻水供給部46所供給之冷卻水，由冷卻水供給孔 230b起通過水路230a後，由於是從冷卻水供給排出孔23〇(： · 排出，故可冷卻托架230全體。 圖34係顯示旋轉位置檢測機構232構成之橫剖面圖。 如圖34所示，於托架230之一側面安裝有發光元件266， 而在托架230之另一側面則安裝有接受來自發光元件266之 光之受光元件268。 另外，於托架230中央，在上下方向貫穿可穿插保持構件 120之轴120d之中央孔230d，而在該中央孔230d處設有交叉 赢 般在橫方向貫穿之貫通孔230e、230f。 一 發光元件266係被插入在一方之貫通孔230e之邊緣部，而 ♦ 受光元件268則被插入於另一方之貫通孔23Of之邊緣部。於 貫通孔230e與230f間由於穿插有軸120d，故可由受光元件 268之輸出變化檢測出轴I20d之旋轉位置。 (7)在此，詳細說明有關旋轉位置檢測機構232之構成與作 用。 圖35A係顯示旋轉位置檢測機構232之非檢測狀態之圖， O:\87\87876.DOC -37- 1230401 而圖35B則顯示旋轉位置檢測機構232之檢測狀態之圖。 如圖35A所不，保持構件12〇之軸12〇d於外周被施以切線 方向之倒角加工。在發光元件266與受光元件268之中間位 置轉動時，該倒角加工部12〇丨會與自發光元件266所發出之 光平行。 此時，來自發光元件266之光，通過倒角加工部12〇i之旁 邊而被照射到受光元件268。藉此，受光元件268之輸出信 號S會變成ON並傳達至旋轉位置判定電路27〇。 如圖35B所示，當保持構件12〇之軸12〇d轉動，倒角加工 部12(h之位置自中間位置偏離時，來自發光元件的光會 被軸120d所遮蔽，使得對旋轉位置判定電路27〇之輸出信號 S變成OFF 〇 圖j6A係顯示旋轉位置檢測機構232之受光元件268之輸 出之波形圖，而圖36B則是從旋轉位置判定電路 所輸出之脈衝信號p之波形圖。 如圖36A所示’受光元件268因軸I20d之轉動位置，使得 來自發光元件266的光之受光量（輸出信號s)成放射線狀變 化。於旋轉位置判定電路27〇中，設定對該輸出信號s之閥 值Η ’當輸出信號s成為閥值η以上時則輸出脈衝p。 該脈衝？係做為檢測保持構件120轉動位置之檢測信號而 被輸出。即係如圖1 〇所示，旋轉位置判定電路27〇判定保持 構件120之臂部uoaq2〇c不會干涉到昇降臂132之抵接銷 13 8a〜13 8c ’且在未干涉到搬送自動機98之機械臂之位置， 而輸出該檢測信號（脈衝P)。Fig. 33A is a cross-sectional view showing the structure of the bracket cooling mechanism 234. Fig. 33B is a side view showing the structure of the bracket cooling mechanism 234. As shown in FIGS. 33A and 33B, the bracket cooling mechanism 234 forms a water channel 23 (^) for cooling water extending in the circumferential direction inside the bracket 23 °, and a cooling water supply is connected to one end of the water channel 230a. The cooling water supply discharge hole 23oc is connected to the other end of the water passage 23oa. The cooling water supplied from the cooling water supply unit 46 passes through the water passage 230a from the cooling water supply hole 230b. Since it is discharged from the cooling water supply and discharge hole 23 ° (:), the entire bracket 230 can be cooled. FIG. 34 is a cross-sectional view showing the structure of the rotation position detecting mechanism 232. As shown in FIG. A light-emitting element 266 is mounted on the side, and a light-receiving element 268 that receives light from the light-emitting element 266 is mounted on the other side of the bracket 230. In addition, in the center of the bracket 230, an axis through which the holding member 120 can be inserted penetrates vertically. The central hole 230d of 120d is provided with through holes 230e and 230f that cross in the transverse direction at the central hole 230d. A light-emitting element 266 is inserted at the edge of one of the through-holes 230e, and a light receiving element 268 are inserted The shaft 120d is inserted into the edge of the other through hole 23Of. Since the shaft 120d is interposed between the through holes 230e and 230f, the rotation position of the shaft I20d can be detected by the output change of the light receiving element 268. (7) Here, the details will be explained The composition and function of the rotational position detection mechanism 232. Figure 35A is a diagram showing the non-detection state of the rotational position detection mechanism 232, O: \ 87 \ 87876.DOC -37- 1230401, and Figure 35B shows the detection of the rotational position detection mechanism 232 A diagram of the state. As shown in FIG. 35A, the axis 120d of the holding member 12o is chamfered in the tangential direction on the outer periphery. When the intermediate position of the light emitting element 266 and the light receiving element 268 is rotated, the chamfering processing portion 12〇 丨 will be parallel to the light emitted from the light-emitting element 266. At this time, the light from the light-emitting element 266 is irradiated to the light-receiving element 268 by the side of the chamfering portion 120i. The output signal S turns ON and is transmitted to the rotation position determination circuit 27. As shown in FIG. 35B, when the axis 12d of the holding member 12 is rotated, the chamfering portion 12 (h is deviated from the intermediate position, the Light emitting element The light will be blocked by the axis 120d, so that the output signal S of the rotation position determination circuit 27 will be OFF. Figure 6A is a waveform diagram showing the output of the light receiving element 268 of the rotation position detection mechanism 232, and Figure 36B is from the rotation position. The waveform of the pulse signal p output by the determination circuit. As shown in FIG. 36A, the light receiving element 268 rotates on the axis I20d, so that the light receiving amount (output signal s) of the light from the light emitting element 266 changes radially. In the rotational position determination circuit 27, a threshold value Η 'for the output signal s is set, and when the output signal s becomes equal to or greater than the threshold value η, a pulse p is output. The pulse? It is output as a detection signal for detecting the rotational position of the holding member 120. That is, as shown in FIG. 10, the rotation position determining circuit 27o determines that the arm portion uoaq20c of the holding member 120 does not interfere with the contact pins 13 8a to 13 8c of the lifting arm 132 and does not interfere with the transfer robot Position of the robotic arm 98, and outputs the detection signal (pulse P).

〇：\87\87876 DOC -38- 1230401 (8)在此’根據由上述旋轉位置判定電路27〇所輸出之檢測 信號（脈衝P)，針對進行控制電路之旋轉位置控制處理作說 明。 。 圖37是為了說明控制電路所進行之旋轉位置控制處理之 流程圖。 如圖37所示，控制電路於su中，當有指示被處理基板w 轉動之控制信號時，則前進至S12使馬達128啟動。接著， 珂進至S13，確認受光元件268之信號是否為〇N。當在 受光兀件268之信號為ON時，則前進至S14，自檢測信號（脈 衝P)之周期計算出保持構件120與被處理基板w之轉動數。 接著，耵進至S15，確認保持構件12〇與被處理基板w之 轉動數η是否為預先所設定之目標轉動數na。於si5，當保 持構件120與被處理基板W之轉動數11為達到目標轉動數⑽ 時，則返回上述S13，再度確認馬達128之轉動數是否有上 昇。 另外，於上述S15中，當n=na時，由於保持構件12〇與被 處理基板w之轉動數11達到目標轉動數na ,故前進至si7 , 確認是否有馬達停止之控制信號。於S17，當無馬達停止之 控制信號時則返回上述S13,而當有馬達停止之控制信號時 則前進至s18,令馬達128停止。緊接著，在S19確認受光元 件268之信號是否為〇N，不斷的重複直到受光元件268之信 號變成ON為止。 如此’保持構件120之臂部120a〜120c不會干涉到昇降臂 132之抵接銷138&〜138(：，且可使其停止在未干涉到搬送自 O:\87\87876.DOC -39- 1230401 動機98之機械臂之位置。 步另外，於上述旋轉位置控制處理中，雖係說明了使用由 :自，光元細之輸出信號之周期求出轉動數之方法之 :形:但例如亦可積算由前述光斷續器加、如所輪出之 化號求出轉動數。 (9)在此，詳細說明有關於處 75、76之構成。 理容器122之侧面所形成之窗 圖38為從上方所見窗口75、76之安裝處之橫剖面圖。圖 39係擴大顯示窗σ75之橫剖面圖。圖4Q係擴大顯示窗口％ 之橫剖面圖。 如圖38、圖39所示，第！窗口 75係可提供氣體於處理容器 122内。[5所形成之製程空間84，由於被減壓成真空，故成氣 密性更高之構成。 ” 窗口 75為具有透明石英272，與遮蔽紫外線11乂之玻璃”4 之二重構造。透明石英272係於抵接於窗口安裝部276之狀 態下，第1窗框278由小螺釘277栓住而固定於窗口安裝部 276。於窗口安裝部276之外面，安裝有氣密地密封住與透 明石英272之間之密封構件（〇環）28〇。此外，於第i窗框 之外面，於使UV破璃274抵接之狀態下，由小螺釘284拴住 固定第2窗框282。 如此，窗口 75藉由UV玻璃274可遮蔽由紫外光源（uv 燈）86、87所照射之紫外線，防止其洩漏至製程空間料之外 部’並藉由後封構件2 § 〇之密封效果，防止被供給至製程空 間8 4之氣體流出於外部。 O:\87\87876.DOC -40- 1230401 另外，貫穿處理容器22側面之開口 286，係以向著處理容 器22之中央，亦即向著被保持於保持構件ι2〇之被處理基板 W之中心，斜斜地貫穿。因此，窗口 75係被設置在從處理 容器22之側面中心偏離之位置，但形成為於橫向可看得較 寬廣之橢圓形狀’而可由外部確認被處理基板w之狀態。 另外，第2窗口 76係與上述窗口 75為相同之構成，具有透 明石英292，與遮蔽紫外線uv玻璃294之二重構造。透明石 英292係以抵接於窗口安裝部296之狀態，將第i窗框298以 小螺釘297鎖住並固定於窗口安裝部296。於窗口安裝部296 之外面，安裝有氣密地密封住與透明石英292之間之密封構 件（0%)3 00。此外，於第i窗框298之外面，以使玻璃294 抵接之狀態，用小螺釘304鎖住並固定第2窗框3〇2。 如此，窗口 76藉由Uv玻璃294遮蔽由紫外光源（uv 燈)86,87所照射之紫外線防止其洩漏至製程空間δ4之外 部’並藉由密封構件300之密封效果，防止被供給至製程空 間84之氣體流出於外部。 所 另外’於本實施例中’雖係以處理容器22之側面配置-對的窗口 75,76之構成做為例子作說明，但不限於此，亦可 設置3個以上的窗或者當然亦可設置在側面以外之場 (1 〇)在此，說明關於槿忐 — 、成石央墊圈100之各盒體102 104 106，108。 ， 如圖9與圖10所示，石常拥阳 、墊圈100為組合下部盒體102、側 面益肢104、上部盒體1〇6盥 、训0荀狀盒體之構成，其各〇: \ 87 \ 87876 DOC -38- 1230401 (8) Here, based on the detection signal (pulse P) output from the above-mentioned rotation position determination circuit 27 °, a description will be given of the rotation position control processing of the control circuit. . Fig. 37 is a flowchart for explaining a rotational position control process performed by the control circuit. As shown in FIG. 37, the control circuit in su, when there is a control signal indicating the rotation of the substrate w to be processed, proceeds to S12 to start the motor 128. Next, the flow proceeds to S13, and it is confirmed whether the signal of the light receiving element 268 is ON. When the signal at the light receiving element 268 is ON, the process proceeds to S14, and the number of rotations of the holding member 120 and the substrate w to be processed is calculated from the period of the detection signal (pulse P). Next, the flow advances to S15, and it is confirmed whether or not the number of rotations η of the holding member 12 and the substrate to be processed w is a target number of rotations na set in advance. At si5, when the number of rotations 11 of the holding member 120 and the substrate W to be processed reaches the target number of rotations 返回, it returns to the above S13, and it is again confirmed whether the number of rotations of the motor 128 has increased. In addition, in S15, when n = na, since the rotation number 11 of the holding member 12 and the substrate to be processed 11 reaches the target rotation number na, the process proceeds to si7 to confirm whether there is a control signal for the motor stop. At S17, when there is no control signal for the motor stop, it returns to the above S13, and when there is a control signal for the motor stop, it proceeds to s18 to stop the motor 128. Next, it is checked in S19 whether the signal of the light receiving element 268 is ON or not, and iteratively repeats until the signal of the light receiving element 268 becomes ON. In this way, the arm portions 120a to 120c of the holding member 120 do not interfere with the abutment pins 138 & ~ 138 (: of the lifting arm 132, and can be stopped without being interfered with. Transfer from O: \ 87 \ 87876.DOC -39 -1230401 The position of the mechanical arm of the motive 98. In addition, in the above-mentioned rotational position control processing, although the method of determining the number of rotations using the period of the output signal from: since, light element is explained: shape: but for example It is also possible to calculate the number of rotations by adding the aforementioned optical interrupter, as the rounded out number. (9) Here, the details of the structure of the locations 75 and 76 are explained in detail. The window formed by the side of the physical container 122 38 is a cross-sectional view of the installation place of windows 75 and 76 seen from above. Fig. 39 is a cross-sectional view of the enlarged display window σ75. Fig. 4Q is a cross-sectional view of the enlarged display window%. As shown in Figs. 38 and 39, The first! Window 75 can provide gas in the processing container 122. [The process space 84 formed by [5] is decompressed to a vacuum, so it has a higher airtightness. "The window 75 has transparent quartz 272, and The double structure of the glass that shields the ultraviolet rays from 11 ”. The transparent quartz 272 is In the state of the window mounting portion 276, the first window frame 278 is bolted to the window mounting portion 276 by a small screw 277. An outer surface of the window mounting portion 276 is air-tightly sealed to the transparent quartz 272 The sealing member (0 ring) 28. In addition, the second window frame 282 is fastened with a small screw 284 on the outer surface of the i-th window frame with the UV breaking glass 274 abutted. In this way, the window 75 is UV glass 274 can shield the ultraviolet rays irradiated by ultraviolet light sources (uv lamps) 86 and 87, prevent them from leaking to the outside of the process space materials, and prevent from being supplied to the process space by the sealing effect of the rear sealing member 2 § 〇 The gas of 4 flows out. O: \ 87 \ 87876.DOC -40-1230401 In addition, the opening 286 through the side of the processing container 22 is directed toward the center of the processing container 22, that is, toward the holding member ι2〇. The center of the substrate to be processed W penetrates obliquely. Therefore, the window 75 is provided at a position deviating from the center of the side surface of the processing container 22, but is formed in an elliptical shape that can be seen in a wide width in the lateral direction and can be confirmed by the outside. State of processing substrate w In addition, the second window 76 has the same structure as the above-mentioned window 75, and has a double structure of transparent quartz 292 and UV-shielding UV glass 294. The transparent quartz 292 is in a state of abutting against the window mounting portion 296, The window frame 298 is locked and fixed to the window mounting portion 296 with a small screw 297. A sealing member (0%) 300 which is hermetically sealed between the window mounting portion 296 and the transparent quartz 292 is installed outside the window mounting portion 296. On the outside of the i-th window frame 298, the second window frame 302 is locked and fixed with a small screw 304 in a state that the glass 294 is in contact. In this way, the window 76 shields the ultraviolet rays irradiated by the ultraviolet light source (uv lamp) 86, 87 by the Uv glass 294 to prevent it from leaking to the outside of the process space δ4 'and the sealing effect of the sealing member 300 prevents the supply to the process space The gas of 84 flows out. In addition, although in the present embodiment, the configuration of the side surfaces of the processing container 22-the pair of windows 75 and 76 is taken as an example, it is not limited to this, and three or more windows may be provided or of course The field (10) provided outside the side will be described here with respect to each of the cases 102, 104, 106, and 108 of the hibiscus-and-shion gasket 100. As shown in FIG. 9 and FIG. 10, Shi Changyongyang and washer 100 are a combination of a lower box body 102, a side benefit limb 104, an upper box body 106, and a training box body.

O:\87\87876.DOC -41 - 1230401 ^由不透明；5英所形成，以保護銘合金製之處理容器Μ不 又*1杜與紫外線傷害，並防止因處理容器22之金屬污毕A 目的而設置。 為 圖41A係顯示下部盒體1〇2構成之俯視 下部盒體1〇2構成之側面圖。 … 如圖41A、圖41B所示’下部盒體1〇2其輪廓形狀係形成 為對應處理容器22之内壁形狀之板狀，而於其中央則形成 有相對於sic基板設置台118與被處理基板w之圓形開口 31〇該圓形開口 31〇形成為可插入圓筒狀盒體之尺寸， 於内周以120度間隔，設置有用於插入保持構件12〇之臂部 120a〜120c之前端部之凹部31〇a〜31〇c。 另外，凹部31〇a〜31〇c之位置，係保持構件12〇之臂部 120a〜120c不會干涉到昇降臂132之抵接銷138&〜13^，且不 干涉到搬送自動機98之機械臂之位置。 另卜於下σ卩益體设置有相對於形成在處理容器η 底部之排氣口 74之長方形開口312。此外，下部盒體ι〇2在 下面於非對稱位置設置有決定位置用之突起31乜，314匕。 另外，於上述圓形開口 310之内周，形成有嵌合後述圓筒 狀麗體108之突起之凹部31〇d。此外，於下部盒體之邊 緣部，設置有嵌合於側面盒體丨〇4之階狀部3丨5。 圖42A係顯示側面盒體1〇4構成之俯視圖，圖42b為側面 盒體104之前視圖，圖42C為側面盒體1〇4之後視圖，圖 為側面盒體104之左側視圖，圖42E為側面盒體1〇4之右側視 圖。O: \ 87 \ 87876.DOC -41-1230401 ^ is made of opaque; 5 inches to protect the processing container M made of Ming alloy * 1 Du and ultraviolet rays, and prevent the metal from processing container 22 from being stained A For purpose. FIG. 41A is a side view showing the structure of the lower box body 102. FIG. … As shown in FIG. 41A and FIG. 41B, the outline of the lower case body 102 is formed into a plate shape corresponding to the shape of the inner wall of the processing container 22, and at the center thereof, a sic substrate setting table 118 and a processed object are formed. The circular opening 31 of the substrate w is formed in a size capable of being inserted into a cylindrical box body, and is provided at 120-degree intervals on the inner periphery with front ends of the arms 120a to 120c for inserting the holding member 120. The concave portion 31〇a ~ 31〇c. In addition, the positions of the recesses 31a to 31c are such that the arm portions 120a to 120c of the holding member 120 do not interfere with the contact pins 138 & ~ 13 ^ of the lifting arm 132, and do not interfere with the transport robot 98. The position of the robot arm. In addition, a lower opening 312 is provided with a rectangular opening 312 with respect to the exhaust port 74 formed at the bottom of the processing container η. In addition, the lower case ι02 is provided with projections 31 乜, 314k for position determination at an asymmetric position below. Further, on the inner periphery of the circular opening 310, a recessed portion 310d into which a protrusion of a cylindrical body 108 described later is fitted is formed. In addition, a stepped portion 3, 5 fitted to the side case 4 is provided at an edge portion of the lower case. 42A is a plan view showing the structure of the side box 104, FIG. 42b is a front view of the side box 104, FIG. 42C is a rear view of the side box 104, the left side view of the side box 104, and FIG. 42E is a side view Right side view of the box body 104.

O:\87\87876.DOC 42- 1230401 如圖42A〜圖42E所示，側面盒體1〇4其外形狀係形成為對 應處理容器22之内㈣狀’四角^獻字狀之大致四角形之 框形狀。在内侧形成有製程空間84。 另外，側面盒體104於正面104a設置有··與前述氣體嘴射 喷嘴部93之複數個的射冑口 93a相對並於橫方向延伸之細 長形之狹縫316’及設置在與被連通至遠距離電㈣27之連 通孔92相對之位置之u字形開σ317。又，於本實施例中， 係狹缝316與開口 317為連通之構成，但亦可形成為各自獨 立之開口。 另外，側面盒體104在背面10仆上，於與搬送口 ％相對之 位置形成有前述搬送自動機98之機械臂通過之凹部318。 另外，侧面盒體104在左側面104(:，形成有相對於前述感 應器單元85之圓形孔319,在右側面1〇4〇1，則形成有相對於 前述窗口 75、76，與感應器單元77之孔32〇〜322。 圖43Α係顯示上部盒體1〇6構成之仰視圖，圖43β則顯示 上部盒體1 0 6構成之側面圖。 如圖43Α、圖43Β所示，上部盒體106其輪廓形狀形成為 對應處理谷益22之内壁形狀之板狀，而於相對紫外線光源 (UV燈）86、87之位置則形成有長方形開口 324、325。此外， 於上部盒體106之邊緣部設置有嵌合側面盒體丨〇4之階狀部 326 〇 另外’上部盒體106設有對應蓋子構件82之形狀之圓形孔 3 27〜3 29 ’與長方形之四角孔33〇。 圖44Α係顯示圓筒狀盒體108構成之俯視圖，圖44Β為圓 O:\87\87876.DOC -43 - 1230401 筒狀盒體108之側面縱剖面圖，圄 口圖4化則疋®筒狀盒體108 之側面圖。 如圖44A〜圖44C所示，圓筒狀盒體1〇8形成為如覆蓋住石 英鐘罩112之外周之筒狀，於上端邊緣部設有被插入昇降臂 1 32之抵接銷1 3 8a〜1 3 8c之凹部彳⑽α 1 η〇 # 108a〜l〇8c。此外，圓筒狀盒 體108於上端部之外周，形赤古山 1 Π 小成有肷合下部盒體102之凹部 3 10d之配合位置用之突起1〇8d。 (π)在此，說明關於升降桿機構30之密封構造。 圖45係擴大顯示升降桿機構3〇之縱剖自圖。圖46則擴大 顯示升降桿機構30之密封構造之縱剖面圖。 如圖45與圖46所示’升降桿機構3()係構成為由驅動部136 令昇降轴134昇降使被插入室8〇内之昇降臂132昇降之際， 由蛇腹形狀之伸縮管332覆蓋住被插入室8〇之貫通孔8〇a内 之昇降軸134之外周，防止在室8〇内之污染。 伸縮管332其蛇腹部份為可伸縮之形狀，例如由錄絡鐵耐 熱合金或耐蝕鎳合金等所形成。另外，貫通孔8〇a由被穿插 昇降軸134之蓋子構件340所閉塞住。 此外，於藉由螺栓33 4鎖住昇降軸134之上端之昇降臂132 之連接構件336，係嵌合固定有圓筒形狀之陶瓷蓋338。該 陶瓷盍338為延伸形成於較連接構件336更下方，係被設置 成由覆蓋住伸縮管332之周圍而不在室8〇内直接露出。 因此’伸縮管332於製程空間84在使昇降臂132上昇之際 會延伸至上方’而由陶瓷所形成之圓筒狀蓋33 8所覆蓋住。 故，伸縮管332藉由可昇降地被插入貫通孔8〇a之圓筒狀蓋O: \ 87 \ 87876.DOC 42-1230401 As shown in Figs. 42A to 42E, the outer shape of the side box body 104 is formed to correspond to the inside of the processing container 22, the shape of a "square", a "square" and a substantially square. Box shape. A process space 84 is formed on the inside. In addition, the side box 104 is provided on the front surface 104a with an elongated slit 316 'opposite to the plurality of injection nozzles 93a of the gas nozzle injection nozzle portion 93 and extending in the horizontal direction, and is provided in communication with The u-shaped opening σ317 at the opposite position of the communication hole 92 of the long-range electric ㈣27. In this embodiment, the slits 316 and the openings 317 are connected to each other, but they may be formed as separate openings. In addition, the side box 104 is formed with a recess 318 through which the robot arm of the transport robot 98 described above passes on the rear surface 10 at a position opposite to the transport port%. In addition, the side box body 104 is formed with a circular hole 319 on the left side 104 (:) and the sensor unit 85, and on the right side 10401, it is formed with the windows 75 and 76 and the sensor Holes 32 to 322 of the actuator unit 77. Fig. 43A is a bottom view showing the structure of the upper case 106, and Fig. 43β is a side view showing the structure of the upper case 106. As shown in Figs. 43A and 43B, the upper part The outline of the box body 106 is formed into a plate shape corresponding to the shape of the inner wall of the valley 22, and rectangular openings 324 and 325 are formed at positions opposite to the ultraviolet light sources (UV lamps) 86 and 87. In addition, the upper box body 106 The edge portion is provided with a stepped portion 326 fitted to the side box body 〇〇4. In addition, 'the upper box body 106 is provided with circular holes 3 27 to 3 29' corresponding to the shape of the cover member 82 and rectangular hole 33 33. 44A is a plan view showing the structure of the cylindrical case 108, and FIG. 44B is a side longitudinal sectional view of the circle O: \ 87 \ 87876.DOC -43-1230401. Figure 4 A side view of the cylindrical box body 108. As shown in Figs. 44A to 44C, the cylindrical box body 108 is formed as described above. The cylindrical shape covering the outer periphery of the quartz bell cover 112 is provided at the upper edge portion with recesses 彳 ⑽α 1 η〇 # 108a ~ 108c inserted into the contact pins 1 3a to 1 3 8c of the lifting arm 1 32. In addition, The cylindrical box body 108 is formed on the outer periphery of the upper end portion, and is shaped like a red ancient mountain 1 Π Xiaocheng has a projection 108d for fitting the recessed portion 3 10d of the lower box body 102. (π) Here, the lift lever will be described. The sealing structure of the mechanism 30. Fig. 45 is an enlarged longitudinal sectional view of the lifting rod mechanism 30. Fig. 46 is an enlarged longitudinal sectional view of the sealing structure of the lifting rod mechanism 30. As shown in Figs. The mechanism 3 () is configured such that when the lifting shaft 134 is raised and lowered by the driving unit 136 to raise and lower the lifting arm 132 inserted into the chamber 80, the through-hole 8 of the inserted chamber 80 is covered with a bellows-shaped telescopic tube 332. The outer periphery of the lifting shaft 134 in a prevents the contamination in the chamber 80. The telescopic tube 332 has a telescopic shape, for example, formed of a heat-resistant iron alloy or a corrosion-resistant nickel alloy. In addition, a through hole 80a is closed by a cover member 340 inserted through the lifting shaft 134. In addition, The bolt 33 4 locks the connecting member 336 of the lifting arm 132 at the upper end of the lifting shaft 134, and is fitted and fixed with a cylindrical ceramic cover 338. The ceramic grate 338 is formed to extend below the connecting member 336 and is provided. It covers the periphery of the telescopic tube 332 and does not directly expose it in the chamber 80. Therefore, the cylindrical cover 33 made of ceramics is extended to the top of the process space 84 when the lifting arm 132 is raised. 8 covered. Therefore, the telescopic tube 332 is inserted into the cylindrical cover of the through hole 80a so as to be liftable.

O:\87\87876.DOC -44- 1230401 33 8，而不會直接曝晒在製程空間84之氣體與熱中，故可防 止因氣體與熱而造成劣化。 (12)以下，說明關於使用基板處理裝置2〇，進行被處理基 板W表面之紫外光自由基氧化處理’與之後所進行之遠= 離電漿自由基氮化處理。 [紫外光自由基氧化處理] 圖47A係顯示使用圖2之基板處理裝置2〇，進行被處理基 板w之自由基氧化情形之側面圖及俯視圖，圖47b係、顯示圖 47A構成之俯視圖。 如圖47A所示’於前述製程空間料中’可由氣體喷射喷 嘴部93供給氧氣體，並於沿著被處理基板w之表面流動 後’經由排氣口 74、渴輪分子幫浦5〇與幫浦2〇1排氣。藉 由使用渦輪分子幫浦50,前述製程空間84之製程星力，^ 被設定在因基㈣之氧自由基之氧化所需之ι〇·3〜ι〇6 丁⑽ 之範圍。 丨口J吋，救理想 L< 冢外j 之紫外線光祕、87，而在如此形成之氧氣流中形成^ 由土所形成之氧自由基在延著前述被處理基板W之表3 "動之際j會乳化旋轉之基板表面。藉由因如此之被處5 基板W之乳自由基之氧化，在梦基板表面，可安定且再系 性佳地形成！_下之膜厚非常薄之氧化膜，特別是相當灰 2〜3原子層之約〇·4 nm膜厚之氧化膜。 ，：㈣所示，可可知紫外線光源86、87為延申於與氧氣 向父又之方向之管狀光源，渴輪分子幫浦50會經由排O: \ 87 \ 87876.DOC -44- 1230401 33 8 without being directly exposed to the gas and heat of the process space 84, so it can prevent the deterioration caused by the gas and heat. (12) The following is a description of using the substrate processing apparatus 20 to perform ultraviolet radical oxidation treatment on the surface of the substrate W to be treated and the distance thereafter = ion plasma radical nitridation treatment. [Ultraviolet Radical Oxidation Treatment] Fig. 47A is a side view and a plan view showing the radical oxidation of the substrate w to be processed using the substrate processing apparatus 20 of Fig. 2, and Fig. 47b is a plan view showing the structure of Fig. 47A. As shown in FIG. 47A, 'in the aforementioned process space material', oxygen gas can be supplied from the gas injection nozzle portion 93 and flows along the surface of the substrate to be processed w 'through the exhaust port 74 and the thirsty molecular pump 50 and Exhaust pump 201. By using the turbomolecular pump 50, the process star force of the aforementioned process space 84 is set to a range of 0.3 to 306, which is required for the oxidation of oxygen radicals based on radicals.丨 J-inch, save the ideal L < UV light secret of the mound outside, 87, and formed in the oxygen flow thus formed ^ oxygen free radicals formed from the soil extend along the aforementioned substrate W Table 3 " When moving, j will emulsify the surface of the rotating substrate. Due to the oxidation of the milk radicals on the substrate 5 due to this, the surface of the dream substrate can be formed stably and re-favorably! The thickness of the oxide film is very thin, especially the oxide film with a thickness of about 0.4 nm which is quite gray 2 ~ 3 atomic layer. As shown by ㈣, it can be seen that the ultraviolet light sources 86 and 87 are tubular light sources extending in the direction of oxygen and father.

O:\87\87876.DOC >45- 1230401 氣口 74排出製程空間84之氣體。另—方面，由前述排氣口 74直接通至幫浦50之圖47B中以點線所示之排氣路徑係藉 由關閉住閥4 8 b而被遮蔽。 圖48係顯示於圖2之基板處理裝置2〇中，藉由圖”八、圖 47B之步驟設定基板溫度於45〇它，並一邊使紫外光照射強 度與氧氣流量，或氧分壓作各種變化一邊於矽基板表面形 成矽氧化膜之情形時，膜厚與氧化時間之關係。但於在圖 48之κ驗中，係在自由基氧化之前除去矽基板表面之自然 氧化膜，又有時，於紫外光激發氮自由基中除去殘留於基 板表面之碳，此外，更於Ar氛圍中，藉由進行於約95〇。〇之 同μ熱處理，平坦化基板表面。另外，作為前述紫外線光 源86,87係使用波長為172 nm之激分子燈。 參照圖48，系列1之資料，係顯示將紫外光照射強度設定 於紫外光源24B之窗面之基準強度（5〇 mW/cm2)i5%，製程 壓力没定成665 mPa(5 mTorr)、氧氣流量設定成30 SCCM時 之氧化時間與氧化膜厚之關係，而系列2之資料，則顯示將 紫外光強度設定成〇，製程壓力設定成133 Pa(1 T〇rr)、氧氣 /瓜里δ又疋成3 SLM之情形之氧化時間與氧化膜厚之關係。 又’系列3之資料，係顯示將紫外光強度設定成〇，製程壓 力设定成2.66 Pa(20 mTorr)，氧氣流量設定成15〇 SCCM之 情形之氧化時間與氧化膜厚之關係，而系列4之資料，則顯 不將紫外光強度設定成！ 〇〇%，即設定成前述基準強度，製 私壓力^又义成2.66 Pa(20 mTorr)、氧氣流量設定成150 SCCM之情形之氧化時間與氧化膜厚之關係。此外，系列$O: \ 87 \ 87876.DOC > 45-1230401 Port 74 discharges gas from process space 84. On the other hand, the exhaust path shown by a dotted line in FIG. 47B from the aforementioned exhaust port 74 directly to the pump 50 is blocked by closing the valve 4 8 b. FIG. 48 is shown in the substrate processing apparatus 20 of FIG. 2, and the substrate temperature is set to 45 ° by the steps of FIG. 8 and FIG. 47B, and the ultraviolet light irradiation intensity and the oxygen flow rate, or the oxygen partial pressure are variously changed. In the case where a silicon oxide film is formed on the surface of a silicon substrate, the relationship between film thickness and oxidation time is changed. However, in the κ test shown in Figure 48, the natural oxide film on the surface of the silicon substrate is removed before radical oxidation, and sometimes The carbon remaining on the substrate surface is removed from the ultraviolet light-excited nitrogen radicals. In addition, in the Ar atmosphere, the substrate surface is flattened by performing the same heat treatment at about 95 °. In addition, as the aforementioned ultraviolet light source 86,87 is an excimer lamp with a wavelength of 172 nm. Referring to Figure 48, the data of Series 1 shows the reference intensity (50mW / cm2) i5% of the ultraviolet light intensity set on the window surface of the ultraviolet light source 24B. , The process pressure is not set to 665 mPa (5 mTorr), the oxygen flow rate is set to 30 SCCM, the relationship between the oxidation time and the thickness of the oxide film, and Series 2 data shows that the ultraviolet light intensity is set to 0, the process pressure is set to 133 Pa (1 T〇rr), the relationship between the oxidation time and the thickness of the oxide film in the case where the oxygen / guar delta is further reduced to 3 SLM. The data of Series 3 shows that the ultraviolet light intensity is set to 0 and the process pressure is set. It is 2.66 Pa (20 mTorr), the relationship between the oxidation time and the thickness of the oxide film when the oxygen flow rate is set to 15〇 SCCM, and the data of Series 4 shows that the ultraviolet light intensity is not set to! 〇 ％, that is set to The relationship between the oxidation time and the film thickness in the case of the aforementioned reference intensity, the private pressure ^ is 2.66 Pa (20 mTorr), and the oxygen flow rate is set to 150 SCCM. In addition, the series $

O:\87\87876.DOC -46- 1230401 之貧料，係顯示將紫外光強度設定成基準強度之2〇%，製 轾壓力設定成2.66 Pa(20 mTorr)、氧氣流量設定成15〇 SCCM 之情形之氧化時間與氧化膜厚之關係，而系列6之資料，則 顯不將紫外光強度設定成基準強度之2〇%，製程壓力約為 67 Pa(0·5 Torr)、氧氣流量為〇·5 SLM時之氧化時間與氧化 膜厚之關係。此外，系列7之資料，係顯示將紫外光強度設 定成基準強度之20%，製程壓力設定成665 1^(5丁〇11〇、氧氣 机里设定成2 SLM時之氧化時間與氧化膜厚之關係，而系列 8之i料’則顯示將紫外光強度設定成基準強度之5 %，製 耘壓力為2·66 Pa(2〇 mT〇rr)、氧氣流量為15〇 SCCM時之氧 化時間與氧化膜厚之關係。 於圖48之實驗中，氧化膜之膜厚·係由XPS法所求得，但 目刖並沒有可求取如此低於1非常薄的氧化膜膜厚之統 一的方法。 口此本^明之發明者，對在圖49所示之所觀察之Si2p執道 之XPS光譜，進行本底校正與3/2及1/2旋轉狀態之分離修 而以圖5〇所示所得結果之Si2p3/2XPS光譜為主，依Lu 正 及直他（Ζ Η τ 一 /、 ·· U，et a1·，APPL Phys，Lett· 71(1997)，ρρ·2764)之教 不，使用於式（1)所示之式與係數求出氧化膜之膜厚d。 ά = λ8ίηα·ΐη [Ιχ+/(βΐ〇-)+1] ⑴ λ = 2.96 β - 0.75 但於式（1)中，达 α為圖55所示之XPS光譜之測出角，於圖示 之例中’破设定成3Q。。又數1中，Ιχ+為對應氧化膜之光譜O: \ 87 \ 87876.DOC -46- 1230401 The lean material shows that the UV intensity is set to 20% of the reference intensity, the control pressure is set to 2.66 Pa (20 mTorr), and the oxygen flow rate is set to 15 SCCM. The relationship between the oxidation time and the thickness of the oxide film in the case, and the data of Series 6 shows that the ultraviolet light intensity is not set to 20% of the reference intensity, the process pressure is about 67 Pa (0.5 Torr), and the oxygen flow rate is 0.5 The relationship between oxidation time and oxide film thickness at SLM. In addition, the data of Series 7 shows the oxidation time and oxide film when the ultraviolet light intensity is set to 20% of the reference intensity, the process pressure is set to 665 1 ^ (5but 0101), and the oxygen machine is set to 2 SLM. The thickness of the material of the series 8 shows the oxidation when the ultraviolet light intensity is set to 5% of the reference intensity, the processing pressure is 2.66 Pa (20 mT0rr), and the oxygen flow rate is 15 SCCM. The relationship between time and oxide film thickness. In the experiment in Figure 48, the film thickness of the oxide film was obtained by the XPS method, but the unity of the film thickness of the oxide film, which is very thin below 1, has not been obtained. The inventor of this manual clarified the XPS spectrum of the Si2p observed in Fig. 49 by performing background correction and 3/2 and 1/2 rotation state separation repairs as shown in Fig. 5 The Si2p3 / 2 XPS spectrum of the results shown is mainly based on the teachings of Lu Zheng and Zhita (Z Η τ a /, U, et a1, APPL Phys, Lett 71 (1997), ρρ 2764). , Use the formula and coefficient shown in formula (1) to find the film thickness d of the oxide film. Ά = λ8ίηα · ΐη [Ιχ + / (βΐ〇-) + 1] ⑴ λ = 2.96 β-0.75 but Measured angle (1), α is shown in Figure 55 of the XPS spectrum of the type, in the illustrated embodiment of the 'broken 3Q .. and is set to the number 1, Ιχ + oxide film corresponding spectrum

O:\87\87876.DOC -47 - 1230401 峰值之積分強度（jlx + fx +户+ ’係對應圖50中於 r〇 + 為 1 02〜104 ev之能量區域所能見到之峰值。另一方 對應U)。eV附近之能量區域中，對應起：之： 峰值之積分強度。 极之先 /再度參照圖48可確認，相對於紫外光照射光度小，因而 =成^氧自由基密度小之情形下（系列U，3,8)，雖最初氧化 二=厚為。者’但隨著氧化時間氧化膜厚會漸漸地 只曰加者，在將紫外光照射光度設定為基準強度之2〇0/ =之系列4,5，M中，如於圖51概略所示，氧化膜成長於 成長開始後會在大致到達〇.4 nm之膜厚之時停滞，而在經 過某種程度的停滞時間後，會再急速的開始成長。 圖48或圖51之關係，係意味著於石夕基板表面之氧化广 理’可安定地形成0.4 _左右之膜厚非常薄的氧化臈。又处 =於圖48所見’可可知由於如此之停滞時間持續了某種程 :’故所形成之氧化膜具有相同之厚度。即，根據本發明， 此於石夕基板上形成厚度約〇.4 nm之相同厚度之氧化膜。 圖52A、圖灿係概略地顯示於該石夕基板上形成薄氧化膜 之製程。於㈣圖中，須注意已非常地單純切（_基板 上之構造。 參照圖52A，於矽基板表面每㈣矽原子結合2個氧原子， 而形成有！原子層之氧層。於其代表性之狀態中，基板表面 之石夕原子係由基板内部的2”原子與基板表面的2個氧原 子所定位，形成副氧化物。 對此，於圖52B之狀態中，石夕基板最上層之石夕原子係“ O:\87\87876.DOC -48- 1230401 固乳原子所定位，取得安定的Sl“之狀態。可能係由於此一 ，由：於圖52A之狀態中快速地進行氧化，變成為圖52B之狀 恶中氧化停滞。於圖52B之狀態之氧化膜之厚度為以疆， 此係與於圖4 8所觀察到之停滞狀態之氧化膜厚-致。 於圖5(3之XPS光譜，於氧化膜厚狀1職或G.2nm之情況 下’於⑻〜⑽eV之能量範圍中可見之低峰值係對應圖52A 之副氧化物，而在氧化膜厚超過〇·3 nm之情形下，由於在 該能量範圍所顯示之峰值係起因於S”'故可認為顯示超過 1原子層之氧化膜的形成者。 如此於0.4 nm之膜厚上之氧化膜厚停滯現象，並不限定 於圖47A、圖47ruv〇2|由基氧化製程，應為只要可以良 好精細度形成同樣薄的氧化膜之氧化膜形成方法，皆可見 到相同之情況。 由圖52B之狀態更加繼續氧化，則會使氧化膜之厚度再度 增大。 又 圖53係顯示在由使用如此之基板處理裝置⑼之圖47八、圖 47B之紫外光自由基氧化製程所形成之氧化膜上，形成厚度 為0.4 nm之ZrSi0x膜與電極膜（參照後面所說明之圖Μ”二 對所得到之積層構造，戶斤求得之熱氧化膜換算膜厚丁q與漏 洩電流Ig之關係。但，圖53之漏洩電流特性係於前述電極 膜與矽基板間，以平帶電壓V fb為基準，以施加之狀態測 定vfb-ο·8ν之電壓。為了比較，於圖53亦顯示有熱^ 膜之漏沒電流特性。另外，圖示之換算膜厚係關於組合氧 化膜與ZrSiOx膜之構造者。 O:\87\87876.DOC -49- 1230401 芩照圖53可知，省略氧化膜時， 之情形下，漏茂電流密度超過敖二：膜編0請 、丰L化勝之漏洩雷洁穷声， …、氧化膜換算膜厚丁eq亦變成約1.7 nm/ 山又 ,, _ , 工右之比較大之值。 轨 右使氧化膜之膜厚由〇職增大至0.4胆，則 ‘.，、乳化膜換异膜厚Teq之值開始減少。於如此之狀態中，氧 化膜會成介於矽基板與ZrSi〇 Λ e ^ ^ ^ ^ 暝之間，其物理膜厚實際上 2增大但換鼻膜厚巧卻呈現減少，此點切基板上直接 / zr〇2膜之情形下’意味著如圖54a所示，大規模地產生 ζΓ向著石夕基板中的擴散或是Si向著咖膜中的擴散，在 石夕基板與ZrSi〇x膜之間形成有厚界面層。對此，可考慮如 圖湖所示，藉由使厚狀4腿之氧化膜介在其中，可抑制 如此之界面層的形成’結果減少換算膜厚者。隨之，可可 知漏浪電流之值亦隨著氧化膜之厚度減少。但圖Μ、圖 54B係顯示出如此所形成之實驗材料之概略的剖面，並且顯 示在石夕基板441上形成有氧化膜442，而於氧化膜442上則形 成有ZrSiOx膜443之構造。 另一方面，當前述氧化膜之膜厚超過0.4nm，則熱氧化膜 換算膜厚之值會開始再度增大。於氧化膜之膜厚超過0.4 nm 之範圍，隨著膜厚之增大漏洩電流之值亦會減少，可想成 其換算膜厚的增大係起因於氧化膜之物理膜厚的增大。 如此，在圖48所觀察到之氧化膜成長所停滯之〇·4 近之膜厚，係對應包含氧化膜與高電介質膜之系之換算膜 厚之最小值，可得知藉由圖52(B)所示之安定的氧化膜，可 有效地阻止Zr等之金屬元素對石夕基板中的擴散，並且即使 O:\87\87876.DOC -50- 1230401 乳化膜的厚度更大’其金屬元素之擴散阻止效 高許多。 +曰促 此外，可知使用0.4 nm厚度之氧化膜時之漏洩電流之 值，係較對應之厚度之熱氧化膜之漏茂電流之值小約2位 數’藉由使用如此構造之絕緣膜於M〇s電晶體之間極絕緣 膜中，可最小化閘極漏洩電流。 另外，於圖48或51所說明之氧化膜成長〇·4 _之停滞現 象之結果’即使如圖55Α所示於石夕基板441上所形成之氧化 膜442存在著最初之膜厚未變化之凹凸，在氧化膜成長之 際’膜厚增大係如圖55Β所示停滞在〇.4聰之附近，故藉由 在停滞期間内繼續氧化膜成長，可得到如圖沉所示料地 平坦、相同膜厚的氧化膜442。 如先前所說明’對於非常薄之氧化膜，目前尚未有統一 、旱則疋方法。因此’圖55C之氧化膜442之膜厚值可能 /曰曰因測定方法相異而有所不同。但由先前所說明之理由可 :知’在氧化膜成長中發生停滯之厚度為2原子層份之厚 又:故’可認為較理想之氧化膜442之膜厚約為2原子層份 之厚度。於該較理想之厚度係為於氧化膜442整體確保有2 之、4之厚度’而有在某部份形成有3原子層份厚度區域 =形°即’可認為較理想之氧化膜442之厚度實際上是Η 原子層之範圍。 [遠距離電漿自由基氮化處理] =56係顯示於基板處理裝置⑼所❹之遠距 之構成。O: \ 87 \ 87876.DOC -47-1230401 The integrated intensity of the peak value (jlx + fx + household + 'corresponds to the peak value that can be seen in the energy region where r〇 + is 1 02 ~ 104 ev in Figure 50. The other side Corresponds to U). In the energy region near eV, corresponding to: of: the integrated intensity of the peak. With reference to Fig. 48 again, it can be confirmed that, compared with the ultraviolet light irradiation, the density of oxygen radicals is small (series U, 3, 8), although the initial oxidation is 2 = thick. However, as the oxidation time increases, the thickness of the oxide film gradually increases. In the series 4, 5, and M where the ultraviolet light irradiation intensity is set to 200 / = of the reference intensity, it is schematically shown in FIG. 51. After the oxide film grows, it will stagnate when it reaches a film thickness of about 0.4 nm, and after a certain amount of stagnation time, it will start to grow rapidly again. The relationship shown in Fig. 48 or Fig. 51 means that the oxide film on the surface of the Shi Xi substrate can stably form a thin oxide film with a thickness of about 0.4 mm. It is seen again in FIG. 48 that ′, it can be seen that, because such a dwell time lasts for a certain period of time: ′, the formed oxide films have the same thickness. That is, according to the present invention, an oxide film having the same thickness as about 0.4 nm is formed on the Shi Xi substrate. 52A and 52C schematically show a process of forming a thin oxide film on the Shixi substrate. In the diagram, it must be noted that the structure on the substrate has been cut very simply. Referring to FIG. 52A, 2 oxygen atoms are bonded to each silicon atom on the surface of the silicon substrate to form an oxygen layer with an atomic layer. Its representative In the state of nature, the Shi Xi atom on the substrate surface is positioned by the 2 "atoms inside the substrate and 2 oxygen atoms on the substrate surface to form a secondary oxide. For this, in the state of FIG. 52B, the Shi Xi substrate is the uppermost layer The Shixi Atomic System "O: \ 87 \ 87876.DOC -48-1230401 is positioned by the solid milk atom to obtain a stable Sl" state. It may be due to this, due to: rapid oxidation in the state of Figure 52A It becomes the stagnation of oxidation in the state shown in Fig. 52B. The thickness of the oxide film in the state of Fig. 52B is the thickness of the oxide film. The XPS spectrum of 3, in the case of oxide film thickness 1 or G.2nm, the low peak visible in the energy range of ⑻ ~ ⑻eV corresponds to the secondary oxide of FIG. 52A, and the oxide film thickness exceeds 0.3 In the case of nm, since the peak value shown in this energy range is due to S "', It is thought that it shows the formation of an oxide film with more than 1 atomic layer. The phenomenon of stagnation of the oxide film thickness at a film thickness of 0.4 nm is not limited to FIG. 47A and FIG. 47ruv〇 | The same method can be used to form the oxide film with the same fineness of the oxide film. From the state shown in FIG. 52B, if the oxidation is continued, the thickness of the oxide film will increase again. In the substrate processing device ⑼, the ZrSi0x film and the electrode film having a thickness of 0.4 nm are formed on the oxide film formed by the ultraviolet light radical oxidation process shown in FIG. 47 and FIG. 47B (refer to the figure “M” described later). The layered structure is the relationship between the thermal oxide film conversion film thickness T and the leakage current Ig obtained by the customer. However, the leakage current characteristics in Figure 53 are between the aforementioned electrode film and the silicon substrate, and the flat band voltage V fb is used as a reference. The voltage of vfb-ο · 8ν was measured in the applied state. For comparison, the leakage current characteristics of the thermal ^ film are also shown in Figure 53. In addition, the converted film thickness in the figure is about the structure of the combined oxide film and ZrSiOx film. O: \ 87 \ 87876.DOC -49- 1230401 According to Figure 53, it can be seen that when the oxide film is omitted, the leakage current density exceeds Ao Er: the film series, please, the leakage of Feng L. Sound,…, the thickness of the oxide film is changed to about 1.7 nm / mm, and _, the larger the value of the right. The right of the rail increases the film thickness of the oxide film from 0 to 0.4. ., The value of the film thickness Teq of the emulsified film begins to decrease. In this state, the oxide film will be between the silicon substrate and ZrSi〇Λ e ^ ^ ^ ^ 暝, and its physical film thickness actually increases by 2 Larger but changing the thickness of the nasal membrane but showing a reduction in thickness. This point when the substrate is cut directly on the substrate / zr〇2 film 'means that as shown in Figure 54a, large-scale diffusion of ζΓ to Shi Xi substrate or Si toward The diffusion in the coffee film forms a thick interface layer between the Shixi substrate and the ZrSiOX film. In this regard, as shown in Fig. 5, it is possible to suppress the formation of such an interface layer by interposing the thick four-legged oxide film therebetween. As a result, the conversion film thickness is reduced. It follows that the value of the leakage current also decreases with the thickness of the oxide film. However, Fig. 54 and Fig. 54B show a schematic cross section of the experimental material thus formed, and it is shown that the oxide film 442 is formed on the stone substrate 441, and the structure of the ZrSiOx film 443 is formed on the oxide film 442. On the other hand, when the film thickness of the foregoing oxide film exceeds 0.4 nm, the value of the film thickness in terms of the thermal oxide film starts to increase again. When the film thickness of the oxide film exceeds 0.4 nm, the leakage current value will decrease as the film thickness increases. It can be considered that the increase in the converted film thickness is due to the increase in the physical film thickness of the oxide film. In this way, the film thickness near 0.4 that the stagnation of the oxide film growth observed in FIG. 48 corresponds to the minimum value of the converted film thickness of the system including the oxide film and the high-dielectric film. It can be seen from FIG. 52 ( B) The stable oxide film shown can effectively prevent the metal elements such as Zr from diffusing into the Shixi substrate, and even if O: \ 87 \ 87876.DOC -50-1230401 the thickness of the emulsion film is larger, its metal Elemental diffusion blocking is much more effective. + In addition, it can be known that the value of the leakage current when an oxide film with a thickness of 0.4 nm is used is about two digits smaller than the value of the leakage current of a thermal oxide film with a corresponding thickness. Moss transistor in the insulating film can minimize the gate leakage current. In addition, as a result of the stagnation phenomenon of the oxide film growth 0.4 as described in FIG. 48 or 51 ', even if the oxide film 442 formed on the Shixi substrate 441 as shown in FIG. 55A has an original film thickness that does not change. Concavity and convexity, when the oxide film grows, the film thickness increase stagnates in the vicinity of 0.4 Satoshi as shown in Figure 55B. Therefore, by continuing the oxide film growth during the stagnation period, it is possible to obtain a flat surface as shown in FIG. And an oxide film 442 of the same film thickness. As explained previously, for very thin oxide films, there is currently no uniform, dry method. Therefore, the film thickness value of the oxide film 442 in FIG. 55C may vary depending on the measurement method. However, from the reasons explained previously, it can be known that the thickness of the stagnation during the growth of the oxide film is 2 atomic layers thick: and therefore it can be considered that the ideal film thickness of the oxide film 442 is about 2 atomic layers . The more ideal thickness is to ensure that the thickness of the oxide film 442 as a whole is 2 to 4, and that there are 3 atomic layer thickness regions formed in a certain part = shape °, which means that the ideal oxide film 442 can be considered. The thickness is actually in the range of Η atomic layers. [Remote Plasma Free Radical Nitriding] = 56 is the long-distance structure shown in the substrate processing equipment.

O:\87\87876.DOC -51 · 1230401 、如圖56所示，遠距離電漿部27係於内部形成有氣體循環 通路27a、與此連通之氣體入口 27b、及氣體出口 之典型 的包含有由鋁構成之區塊27A，而在前述區塊27A之一部份 形成有鐵氧體磁心27B。 於前述氣體循環通路27a、氣體入口 27b及氣體出口 27c之 内面，係配設有氟素樹脂加工27d，由捲繞在前述鐵氧體磁 心27B之線圈提供頻率為4〇〇 kHz之高頻，而於前述氣體循 環通路27a内形成電漿27C。 隧著電漿27C之激發，於前述氣體循環通路27&中雖形成 有氮自由基與氮離子，但氮離子會於循環於前述氣體循環 通路27a之際消失，故由前述氣體出口 27c主要是釋放出氮 自由基N/。此外，於圖56之構成中，係藉由設置接地於前 述氣體出口 27c之離子過濾器27e，而除去如氮離子等之帶 電粒子，而於前述製程空間84僅供給有氮自由基。另外， 即使在未使前述離子過濾器27e接地之情形下’前述離子過 濾器27e之構造亦有作為擴散板作用，可充分地除去如氮離 子等之帶電粒子。 圖57係顯示由遠距離電漿部27所形成之離子數與電子能 量之關係，與微波電漿源之比較。 如圖57所示，在由微波激發電漿之情形下，會促進氮分 子之氮離子化，而形成有量多的氮離子。對此，在由5〇〇kHz 以下之高頻激發電漿之情形下，會大幅度地減少所形成之 氮離子數。在以微波進行電漿處理時，如圖58所示，則需 ^1.33x10^1.33x10- Pa(l〇-^10-T〇rr)^,^^ , O:\87\87876.DOC -52- 1230401 水 彳本可以U.3〜13.3 kPa(0.1〜100 Τ〇ΓΓ)之比較高之壓 力來進行。 , ^ 系顯示在由微波激發電锻之情形，與由高頻 激發電漿之情形間，離子化能量變換效率、放電可能壓力 圍、電聚消耗電力及製程氣體流量的比較。O: \ 87 \ 87876.DOC -51 · 1230401 As shown in Figure 56, the remote plasma unit 27 is formed with a gas circulation path 27a, a gas inlet 27b, and a gas outlet. There is a block 27A made of aluminum, and a ferrite core 27B is formed in a part of the aforementioned block 27A. On the inner surfaces of the gas circulation path 27a, the gas inlet 27b, and the gas outlet 27c, a fluorine resin processing 27d is provided, and a high frequency of 400 kHz is provided by a coil wound around the ferrite core 27B. A plasma 27C is formed in the gas circulation path 27a. Excitation of the plasma 27C, although nitrogen radicals and nitrogen ions are formed in the gas circulation path 27 &, but the nitrogen ions will disappear while circulating in the gas circulation path 27a, so the gas outlet 27c is mainly Nitrogen radical N / is released. In addition, in the configuration of FIG. 56, an ion filter 27e grounded to the gas outlet 27c is provided to remove charged particles such as nitrogen ions, and only nitrogen radicals are supplied to the process space 84. In addition, even when the ion filter 27e is not grounded, the structure of the ion filter 27e functions as a diffusion plate and can sufficiently remove charged particles such as nitrogen ions. Fig. 57 shows the relationship between the number of ions and the energy of the electrons formed by the remote plasma unit 27 and the comparison with the microwave plasma source. As shown in Fig. 57, when the plasma is excited by the microwave, nitrogen ionization of the nitrogen molecules is promoted, and a large amount of nitrogen ions are formed. On the other hand, when the plasma is excited at a high frequency below 500 kHz, the number of nitrogen ions formed is greatly reduced. When plasma treatment is performed by microwave, as shown in Fig. 58, ^ 1.33x10 ^ 1.33x10- Pa (l0- ^ 10-T〇rr) ^, ^^, O: \ 87 \ 87876.DOC- 52-1230401 Water pupae could have been carried out at a relatively high pressure of U.3 ~ 13.3 kPa (0.1 ~ 100 ΤΓΓ). , ^ Shows the comparison of ionization energy conversion efficiency, discharge potential pressure range, electricity consumption power consumption, and process gas flow between the case of electroforging by microwave and the case of plasma by high frequency.

— 表 1 两库卞化能量變 換效率 放電可能 壓力範圍 電漿 消耗電力 製程 氣體流量 —--- 微波 南頻 ----___^八卞 lOOxlo·2 0.1 m〜0·1 Torr 1〜500 W 〇〜100SCCM l^〇〇xlF~ 0·1 〜100 Torr 1 〜10kW 〇·1 〜10SLM 參照表1，可知關於離子化能量變換效率，相對於在微波 激發之情形時約為lxl0_2左右，於RF激發之情形則減少至 約1X10-7為止，另外，關於放電可能壓力，相對於為微波激 發之 0·1 mT〇rr〜0.l T〇rr(133 mPa 〜13.3 Pa)左右，RF 激發之 情形則是ο·ι〜i〇〇Torr(13 3Pa〜13 3kPa)左右。隨之，電漿 消耗電力係RF激發時較微波激發時為大，而製程氣體流量 係RF激發時亦較微波激發時大出很多。 於基板處理裝置20中，係以氮自由而非氮離子來進 行氧化膜之氮化處理，因此被激發之氮離子數量少較為理 想。又，由最小化被加諸於被處理基板之損害之觀點來看， 亦是被激發之氮離子數量少較為理想。此外，於基板處理 裝置20中，以被激發之氮自由基數量少，於高電介質閘極 絕緣膜下非常薄之最多2〜3原子層左右厚度之基底氧化 膜，非常適合於氮化。 圖59A、圖59B係分別顯示使用基板處理裝置2〇進行被處 O:\87\87876.DOC -53 - 1230401 理基板w之自由基氮化時之側面圖與俯視圖。 如圖59A '圖59B所示，於遠距離電漿部27供給有Ar氣體 /、氮氣體，故以數1〇〇 kHr之頻率藉由高頻激發電漿，形成 氮自由基。而被形成之氮自由基係延著前述被處理基板w 之表面流動，經由前述排氣口 74與幫浦2〇1被排出。結果， 刖述製程空間84可被設定於適合基板…之自由基氮化之 133 Pa〜13.3 kPa(0.01〜1〇〇 Torr)範圍的製程壓力。如此被 形成之氮自由基會在延著前述被處理基板W之表面流動之 際，氮化被處理基板W之表面。 於圖59A、圖59B之氮化步驟中，於氮化步驟之前的清淨 步驟中，珂述閥48a與2 12為被開放，藉由關閉閥48a使前述 製程空間84之壓力減壓至1.33><1〇-1〜133><1〇-41^之壓力為 止，殘留於製程空間84中之氧及水分會被清除，但於其後 之氮化處理中，其閥48a與212被關閉，而渦輪分子幫浦5〇 則不包含於製程空間84之排氣路徑。 如此，藉由使用基板處理裝置2〇，可在被處理基板…之 表面形成非常薄之氧化膜，並進一步氮化其氧化膜表面。 圖60A係顯示使用遠距離電漿部27，並以表2所示條件氮 化藉由基板處理裝置2 0在矽基板上進行熱氧化處理而形成 之2.0 nm厚之氧化膜時之前述氧化膜中之氮濃度分佈，圖 60B則顯示於相同氧化膜中之氮濃度分佈與氧濃度分佈之 關係圖。 表2— Table 1 The potential energy range of the two banks' energy conversion efficiency discharge. Plasma consumption power process gas flow —--- microwave south frequency ---- ^ 卞 lOOxlo · 2 0.1 m ~ 0 · 1 Torr 1 ~ 500 W 〇 ～ 100SCCM l ^ 〇〇xlF ~ 0 · 1 ～ 100 Torr 1 ～ 10kW 〇 · 1 ～ 10SLM With reference to Table 1, it can be seen that the ionization energy conversion efficiency is about lxl0_2 in the case of microwave excitation, which is about RF In the case of excitation, it is reduced to about 1 × 10-7. In addition, regarding the possible discharge pressure, the RF excitation is about 0.1 mT〇rr ~ 0.1 T Torr (133 mPa ~ 13.3 Pa) relative to microwave excitation. The situation is about ο · ι ~ i〇〇TOR (13 3Pa ~ 13 3kPa). As a result, the plasma power consumption is greater in RF excitation than in microwave excitation, and process gas flow is much greater in RF excitation than in microwave excitation. In the substrate processing apparatus 20, the nitridation process of the oxide film is performed with nitrogen free instead of nitrogen ions, so it is desirable that the number of excited nitrogen ions is small. From the viewpoint of minimizing the damage to be applied to the substrate to be processed, it is also desirable that the number of excited nitrogen ions is small. In addition, in the substrate processing apparatus 20, the base oxide film with a small number of excited nitrogen radicals and a thickness of about 2 to 3 atomic layers under the high dielectric gate insulating film is very suitable for nitriding. 59A and 59B are a side view and a top view, respectively, when a substrate processing apparatus 20 is used to perform a process of O: \ 87 \ 87876.DOC -53-1230401 for radical nitridation of a physical substrate w. As shown in FIGS. 59A and 59B, Ar gas / nitrogen gas is supplied to the long-range plasma unit 27, so the plasma is excited by high frequency at a frequency of several hundred kHr to form nitrogen radicals. The formed nitrogen radicals flow along the surface of the substrate w to be processed, and are discharged through the exhaust port 74 and the pump 201. As a result, the process space 84 can be set to a process pressure in the range of 133 Pa to 13.3 kPa (0.01 to 100 Torr) suitable for radical nitridation of the substrate. The nitrogen radicals thus formed will nitride the surface of the substrate W to be processed while flowing along the surface of the substrate W to be processed. In the nitriding step of FIG. 59A and FIG. 59B, in the cleaning step before the nitriding step, the valves 48a and 212 are opened, and the pressure in the process space 84 is reduced to 1.33 by closing the valve 48a. < 1〇-1 ~ 133 > < 1〇-41 ^ pressure, oxygen and moisture remaining in the process space 84 will be removed, but in the subsequent nitriding treatment, its valves 48a and 212 Is turned off, and the turbo molecular pump 50 is not included in the exhaust path of the process space 84. In this way, by using the substrate processing apparatus 20, a very thin oxide film can be formed on the surface of the substrate to be processed, and the surface of the oxide film can be further nitrided. FIG. 60A shows the aforementioned oxide film when a long-range plasma unit 27 was used and nitriding a 2.0 nm-thick oxide film formed by performing a thermal oxidation treatment on a silicon substrate with a substrate processing apparatus 20 under the conditions shown in Table 2. The nitrogen concentration distribution in FIG. 60B is a graph showing the relationship between the nitrogen concentration distribution and the oxygen concentration distribution in the same oxide film. Table 2

氮流i Ar流量 電漿電力 壓力 溫度 微波 15 SCCM - 120 W 8.6 mTorr 500°C 南頻 50 SCCM 2SLM^] 2kW 1 Torr 700°CNitrogen flow i Ar flow Plasma power Pressure Temperature Microwave 15 SCCM-120 W 8.6 mTorr 500 ° C South frequency 50 SCCM 2SLM ^] 2kW 1 Torr 700 ° C

O:\87\87876.DOC -54- 1230401 茶照表2 ’於使用基板處理裝置2〇進行氮化處理之際， 對製程空間84内，以50 SCCM之流量供給氮或2 SLM之流量 供給Ar，在1 Torr(133 Pa)之壓力下進行氮化處理，但於氮 化處理開始前暫時將製程空間84之内壓減壓至1〇_6 rr(l.JJXi〇 pa)左右為止，並充分地清除殘留於内部之氧 或水份。因此，於以前述i τ〇ΓΓ左右之壓力所進行之氮化處 理之際，於製程空間84中，其殘留氧可由^或氮來稀釋， 殘留氧濃度，故殘留氧之熱力學上之活動度變的非常地小。 對此，在使用微波電漿之氮化處理中，氮化處理時之處 理壓力係與清除壓為同樣程度，故可認為於電漿氛圍中， 殘留氧係具有局熱力學上活動度者。 參照圖60Α，於藉由微波激發電漿而氮化之情形時，其被 導入於氧化膜中之氮的濃度為有限的，故可知實質上並未進 行氧化膜之氮化。對此如同本實施例般，於藉由尺？激發電漿 而氮化之情形時，可知於氧化膜中其氮濃度會隨著深度呈現 線性變化，而在表面附近則達到將近2〇%之濃度。 圖61係顯示使用XPS(X射線光譜）所進行之圖6〇α之測定 原理。 參照圖61，於矽基板411上形成氧化膜412之試驗材料， 係由X射線以特定角度斜斜地照射，再由檢測器deti、 DET2以各種角度檢測被激發之X射線光譜。此時，例如由 被設定成9(Γ之深檢測角之檢測器DETlt，其於激發χ射線 之氧化膜412内之路徑短，故於以前述檢測器deti所檢測 之X射線光譜中包含有許多氧化膜412之下部資訊，相對於 O:\87\87876.DOC -55- 1230401 此’在被設定成淺檢測角之檢測器DET2中，其於激發χ射 線之氧化膜412中之路徑長，故檢測^ΕΤ2主要是檢測氧 化膜4 1 2表面附近之資訊。 ^圖6犯係顯示於前述氧化膜中之氮濃度與氧濃度之關 :、仁圖6〇B中，氧濃度係由對應Ols軌道之χ射線強度所 表示。 #參知、圖6〇B ’在如本發明般以RF遠距離電滎進行氧化膜 氮化之It形中’隨著氮濃度的增大會使氧濃度減少，故可 知=氧化膜中氮原子會置換氧原子。對此，在以微波電漿 進仃乳化膜氮化之情形中，無法見到如此之置換關係，亦 不見氧濃度隨著氮濃度而降低之關係。另夕卜特別是於圖 中在由微波氮化導入5〜6%的氮之例中可見到氧濃度 的增加’此係意味著隨著氮化而引起氧化膜之增加。隨著 :此之微波虱化之氧濃度的增加，係於高真空中進行微波 W ’故可認為殘留於處理空間中之氧或水份並非藉由如 咼頻遠距離電渡f _ A ^ & X虱化It形之Ar氣體與氮氣體來稀釋，而是 因在氛圍中具有高活動度者。 圖62係顯示於基板處理裝置卿成厚度為4 Α(0·4職)與 7 A(0.7 nm)之虱化膜，並由使用前述遠距離電漿部π之圖 似、圖观之氮化步驟，將其氮化時之氮化時間與膜中之 ^農度之關係。又圖63係顯示對隨著㈣之氮化處理之氮對 氧化膜膜表面之偏析情形。另外，於圖62、圖〇亦顯示出以 急速熱氧化處理將氧化膜形成為5 A(G5謂)或7 AW㈣ 的厚度之情形。O: \ 87 \ 87876.DOC -54- 1230401 Tea Photo Table 2 'When nitriding is performed using the substrate processing device 20, nitrogen is supplied to the process space 84 at a flow rate of 50 SCCM or 2 SLM. Ar, the nitriding treatment is performed under a pressure of 1 Torr (133 Pa), but the internal pressure of the process space 84 is temporarily decompressed to about 10-6 rr (l.JJXiopa) before the nitriding treatment starts. And fully remove the oxygen or moisture remaining in the interior. Therefore, in the nitriding treatment performed under the pressure of about i τ〇ΓΓ, in the process space 84, the residual oxygen can be diluted by ^ or nitrogen, and the residual oxygen concentration, so the thermodynamic activity of the residual oxygen Becomes very small. On the other hand, in the nitriding process using a microwave plasma, the treatment pressure during the nitriding process is about the same as the purge pressure. Therefore, it can be considered that the residual oxygen system has local thermodynamic activity in the plasma atmosphere. Referring to FIG. 60A, in the case where the plasma is nitrided by exciting the microwave, the concentration of nitrogen introduced into the oxide film is limited, so it can be seen that the nitriding of the oxide film is not substantially performed. This is the same as this embodiment. When the plasma is excited and nitridated, it can be seen that the nitrogen concentration in the oxide film changes linearly with depth, and reaches a concentration of nearly 20% near the surface. Fig. 61 shows the measurement principle of Fig. 60α using XPS (X-ray spectroscopy). Referring to FIG. 61, a test material for forming an oxide film 412 on a silicon substrate 411 is obliquely irradiated with X-rays at a specific angle, and then the detectors deti, DET2 detect the excited X-ray spectrum at various angles. At this time, for example, the detector DETlt set to a deep detection angle of 9 (Γ) has a short path in the oxide film 412 that excites x-rays, so the X-ray spectrum detected by the aforementioned detector deti includes A lot of information on the lower part of the oxide film 412 is relative to O: \ 87 \ 87876.DOC -55- 1230401. In the detector DET2 which is set to a shallow detection angle, its path is long in the oxide film 412 that excites x-rays. Therefore, the detection ^ ET2 is mainly to detect the information near the surface of the oxide film 4 1 2 ^ Figure 6 shows the relationship between the nitrogen concentration and the oxygen concentration in the foregoing oxide film: In Figure 6B, the oxygen concentration is determined by Indicated by the x-ray intensity corresponding to the Ols orbit. #Refer to FIG. 60B 'In the shape of the oxide film nitridation by RF long-distance galvanization as in the present invention' As the nitrogen concentration increases, the oxygen concentration will increase It is reduced, so we know that nitrogen atoms in the oxide film will replace oxygen atoms. In this case, in the case of microwave plasma plasma nitridation, such a replacement relationship cannot be seen, and the oxygen concentration does not change with the nitrogen concentration. Reducing the relationship. In addition, especially in the figure, 5 is introduced by microwave nitriding. An increase in oxygen concentration can be seen in the case of ~ 6% nitrogen. 'This system means that the oxide film increases with nitriding. With: The increase in the oxygen concentration of this microwave lice is carried out in a high vacuum. The microwave W 'can be considered that the oxygen or water remaining in the processing space is not diluted by long-distance electric waves such as f_A ^ & X Lattified It gas and nitrogen gas, but because of Those with a high degree of activity in the atmosphere. Figure 62 shows a lice-forming film with a thickness of 4 A (0.4 position) and 7 A (0.7 nm) in a substrate processing apparatus. The figure shows the relationship between the nitriding time and the nitrification time in the film. Figure 63 shows the effect of nitrogen on the oxide film surface with nitriding treatment. The segregation situation is shown in Fig. 62 and Fig. 0, and the oxide film is formed to a thickness of 5 A (G5) or 7 AW㈣ by a rapid thermal oxidation treatment.

O:\87\87876.DOC -56- !23〇4〇ι 、、、圖62 ’膜中之氮濃度係任-氧化膜皆會隨著氮化處 &才間叨—起上昇，但特別是在具有對應由紫外光自由基 ^化所形成之2原子層份之〇.4疆膜厚之氧化膜的情形，或 有接近於此之〇_5 nm膜厚之熱氧化膜的情形時，由於氧 化膜薄，故於相同成膜條件下膜中之氮濃度會變高。 圖63係顯示於圖61分別將檢測器贿以贿 及％。之檢測角所檢測出之氮濃度之結果。 由圖63可知’圖63之縱轴係以9()。之檢測角所得到由分散 =全體之氮原子而來之X射線光譜強度之值，除30。之檢 到之由偏析於膜表面之氮原子之χ射線光譜強度 于_ I將此疋義為氮偏析率。在該值為1以上之情形 下，會產生對表面之氮偏析。 參照圖63,藉由紫外光激發氧自由 r旱形:為〜情形下，其氮偏析率成為丨以上，：原:： 面偏析’可認為是如圖1中之氧氮化膜12八之狀態 知在進行9〇秒間之氮化處理後，於膜中之分 佈大致相同。又可知即佶 亦會使氮科… 膜，以9〇秒之氮化處理， 使虱原子之财分佈變成大致相同。 於圖64之實驗中，在其 圓—⑼，重複=工裝置2°’針對10副 距雜+將> T則述1外光自由基氧化處理及遠 個；。圖64係顯示如此得到之氧氮化膜之每 日日0之膜厚叆動。但，圖士 置卿動紫外線光源86、87而進係關於在基板處理裝 之際，形成由挪測定所求订1外光自由基氧化處理 于之氧化膜厚度為〇·4 nm之氧化O: \ 87 \ 87876.DOC -56-! 23〇4〇ι, Figure 62 'The nitrogen concentration in the film is any-the oxide film will rise with the nitrided area & Especially in the case of having an oxide film with a thickness of 0.4 layer corresponding to the 2-atomic layer formed by the radicalization of ultraviolet light, or in the case of a thermal oxide film close to the thickness of 0-5 nm. At this time, since the oxide film is thin, the nitrogen concentration in the film becomes higher under the same film formation conditions. FIG. 63 shows that the detector is bribed and% respectively shown in FIG. 61. The result of the nitrogen concentration detected at the detection angle. It can be seen from FIG. 63 that the vertical axis of FIG. 63 is 9 (). Divide 30 by the value of the X-ray spectral intensity obtained from the scattered angle of the entire nitrogen atom at the detection angle. The X-ray spectral intensity of nitrogen atoms segregated on the surface of the film was detected. This is defined as the nitrogen segregation rate. When the value is 1 or more, nitrogen segregation on the surface occurs. Referring to FIG. 63, the oxygen free r shape is excited by ultraviolet light: in the case of ~, the nitrogen segregation rate becomes more than or equal to: original :: surface segregation can be considered as the oxynitride film 12 in FIG. 1 It is known that the distribution in the film after the nitriding treatment for 90 seconds is approximately the same. It can also be seen that 佶 also causes the nitrogenaceae ... film to be nitridated for 90 seconds, so that the distribution of lice atom wealth becomes approximately the same. In the experiment of Fig. 64, in its circle-⑼, repetition = industrial device 2 ° 'for 10 pairs of impurities + T &T; 1 external light radical oxidation treatment and far away; Fig. 64 shows the film thickness of each of the oxynitride films thus obtained per day. However, Tushi Zhiqing moved the ultraviolet light sources 86 and 87 to the substrate processing equipment to form an external light free radical oxidation treatment as determined by the Norwegian measurement. The oxidation film thickness was 0.4 nm.

O:\87\87876.DOC -57 - 1230401 膜’接著，將如此所形成之氧化 電漿卿行氮化處理，變換成包含約4% =:距離 膜之情形者。 j4/。虱原子之虱氮化 參照圖64,縱轴係顯示對於如此 圓對稱所求得之膜厚，但由圖、以化膜以橢 致安定於8 &0.8 nm)。 °所求得之膜厚係大 圖65係顯示藉由基板處理裝置2〇， 紫外線光源86,87之自由其、 土板上糟由使用 化膜後“ 基乳化處理形成膜厚為〇.4 run之氧 、’糟由遠距_部27將其加以 的因氮化之膜厚增加之調查結果。 ㈣所仔 之=65可知最初(進行氮化處理前)膜厚約為一 、’係在氮化處理中導人4〜7%之氮原子之時，膜厚 、沟牦大至0·5 nm為止。另一方面， 、 筠 在虱化處理中導入約1 50/〇 :=其膜厚約增大至!.3_為止，於該情形時可 化膜。a之i原子通過氧化膜侵人切基板中而形成氮 。：圖65中係以▲顯示有關僅導入—層份之氮於厚度為 關係一化膜中之理想的模型構造中之氮濃度與膜厚之 严’於該理想的模型構造中，氮原子導入後之膜 成〇.5nm，該情形時之膜厚增加約為〇inm，而氮濃 二:Γ2%:_若以該模型為基準’則結論為：藉由基板處 ' 20進行氧化膜之氮化時’其膜厚增加以抑制在相同 王又之〜0.2職者為較理想。另外此時亦可預估被取入於O: \ 87 \ 87876.DOC -57-1230401 Film ’Then, the oxidized plasma thus formed is subjected to a nitriding treatment and converted into a case containing about 4% =: distance film. j4 /. (See Figure 64. The vertical axis shows the film thickness obtained for such a circular symmetry, but the figure shows that the film is elliptically stabilized at 8 & 0.8 nm). ° The obtained film thickness is large. Figure 65 shows that with the substrate processing device 20, the UV light sources 86,87 are free, and the soil film is formed by using "chemical emulsification" to form a film thickness of 0.4. The oxygen of the run and the result of the investigation of the increase in the thickness of the film due to nitridation added by the long-distance _ section 27. ㈣ 所 仔 = 65 It can be seen that the initial (before nitriding) film thickness is about one. When 4 to 7% of nitrogen atoms are introduced in the nitriding treatment, the film thickness and furrows are as large as 0.5 nm. On the other hand, 筠 and 筠 are introduced into the treatment by about 150 / 〇: = The film thickness is increased to about ..3_. In this case, the film can be formed. The i-a atom of a penetrates into the cut substrate by the oxide film to form nitrogen. The thickness of nitrogen in the ideal model structure of the film is related to the nitrogen concentration and the thickness of the film. In this ideal model structure, the film after the introduction of nitrogen atoms is 0.5 nm, and the film thickness in this case The increase is about 0 inm, and the nitrogen concentration is: Γ2%: _ If the model is used as a reference, then the conclusion is: the film is nitrided by the substrate at 20 To inhibit the same increase of ~0.2 the king post are ideal for the addition is taken in this case to also estimate

O:\87\87876.DOC -58- 1230401 膜中之氮原子量最大為丨2%左右。 另外於以上之說明中，係說明使用基板處理裝置2〇而 成非4薄之基底氧化膜之例，但本發明並未限定於如此 特定之實施例’亦可適用在⑨基板切膠層上，形成所希 望膜厚之高品質氧化膜、氮化膜或氮氧化膜。 以上，以較佳之實施例說明了本發明，但本發明並未限 疋於上述之特定實施例，於揭示在申請專利範圍之要旨内 皆可作各種變化、變更。 【圖式簡單說明】 圖1係顯示含有高電介質閘極絕緣膜之半導體裝置之構 成圖。 圖2係顯示本發明之基板處理裝置之一實施例構成之前 視圖。 圖3係顯示本發明之基板處理裝置之一實施例構成之側 視圖。 圖4為沿著圖2A-A線之橫剖面圖。 圖5係顯示配置於處理容器22下方之機器構成之前視圖。 圖6係顯示配置於處理容器22下方之機器構成之俯視圖。 圖7係顯示配置於處理容器22下方之機器構成之側視圖。 圖8 A係顯示排氣路徑32之構成之俯視圖。 圖8B係顯示排氣路徑32之構成之前視圖。 圖8C為沿著B-B線之縱剖面圖。 圖9係擴大顯示處理容器2 2及其周邊機器之側面縱剖面圖。 圖1 〇為從上方所見拿掉蓋子構件82後之處理容器22内部O: \ 87 \ 87876.DOC -58- 1230401 The maximum amount of nitrogen atoms in the film is about 2%. In addition, in the above description, an example in which a substrate processing device 20 was used to form a non-thin base oxide film was described. However, the present invention is not limited to such a specific embodiment. It can also be applied to a substrate cutting layer. To form a high-quality oxide film, nitride film, or oxynitride film with a desired film thickness. In the above, the present invention has been described with preferred embodiments, but the present invention is not limited to the specific embodiments described above, and various changes and modifications can be made within the scope of the scope of the patent application. [Brief Description of the Drawings] FIG. 1 is a diagram showing the structure of a semiconductor device including a high-dielectric gate insulating film. Fig. 2 is a front view showing the structure of an embodiment of a substrate processing apparatus of the present invention. Fig. 3 is a side view showing the structure of an embodiment of a substrate processing apparatus of the present invention. Fig. 4 is a cross-sectional view taken along the line A-A of Fig. 2. FIG. 5 is a front view showing the configuration of a machine disposed below the processing container 22. FIG. 6 is a plan view showing the structure of a machine disposed below the processing container 22. FIG. 7 is a side view showing the configuration of a machine disposed below the processing container 22. FIG. 8A is a plan view showing the configuration of the exhaust path 32. FIG. FIG. 8B is a front view showing the configuration of the exhaust path 32. FIG. Fig. 8C is a longitudinal sectional view taken along line B-B. FIG. 9 is an enlarged side sectional view of the processing container 22 and its peripheral devices. FIG. 10 is the inside of the processing container 22 with the lid member 82 removed as seen from above.

O:\87\87876.DOC -59- 1230401 之俯視圖。 圖π為處理容器22之俯視圖。 圖12為處理容器22之前視圖。 圖13為處理容器22之仰視圖。 圖Η為沿著圖12*c_c線之縱剖面圖。 圖1 5為處理容器2 2之右側視圖。 圖16為處理容器22之左側視圖。 圖Π係擴大顯示紫外線光源86、87之安裝構造之縱剖面圖。 圖18係擴大顯示氣體喷射喷嘴部93之構成之縱剖面圖。 圖19係擴大顯示氣體喷射喷嘴部％之構成之橫剖面圖。 圖20係擴大顯示氣體噴射噴嘴部％之構成之前視圖。 圖21係擴大顯示加熱部24之構成之縱剖面圖。 圖22係擴大顯示加熱部24之仰視圖。 圖23係擴大顯示第2流入口 17〇，及第2流出口 174之安裝 構造之縱剖面圖。 圖24係擴大顯示凸緣14〇之安裝構造之縱剖面圖。 圖25係擴大顯示夾鉗機構19〇之上端部之安裝構造之縱 剖面圖。 圖26係顯示SiC加熱器114，及Sic加熱器114之控制系統 構造之圖。 圖27A係顯示石英鐘罩112之構造之俯視圖。 圖27B係顯示石英鐘罩112之構造之縱剖面圖。 圖28A為從上方所見石英鐘罩112之構造之立體圖。 圖28]6為從下方所見石英鐘罩112之構造之立體圖。O: \ 87 \ 87876.DOC -59- 1230401 Top view. FIG. Π is a plan view of the processing container 22. FIG. 12 is a front view of the processing container 22. FIG. 13 is a bottom view of the processing container 22. Figure Η is a longitudinal sectional view taken along the line * c_c in Figure 12. FIG. 15 is a right side view of the processing container 22. FIG. 16 is a left side view of the processing container 22. FIG. II is a longitudinal sectional view showing the mounting structure of the ultraviolet light sources 86 and 87 in an enlarged manner. FIG. 18 is a longitudinal sectional view showing an enlarged configuration of the gas injection nozzle portion 93. FIG. FIG. 19 is a cross-sectional view showing the structure of the gas injection nozzle portion% in an enlarged manner. FIG. 20 is an enlarged front view showing the configuration of the gas injection nozzle portion%. FIG. 21 is a longitudinal sectional view showing an enlarged configuration of the heating section 24. FIG. 22 is an enlarged bottom view of the heating unit 24. Fig. 23 is a longitudinal sectional view showing the mounting structure of the second inflow port 170 and the second outflow port 174 in an enlarged manner. Fig. 24 is a longitudinal sectional view showing the mounting structure of the flange 14 in an enlarged manner. Fig. 25 is a longitudinal sectional view showing the mounting structure of the upper end portion of the clamp mechanism 19 in an enlarged manner. FIG. 26 is a diagram showing the configuration of a control system of the SiC heater 114 and the Sic heater 114. FIG. FIG. 27A is a plan view showing the configuration of the quartz bell cover 112. FIG. Fig. 27B is a longitudinal sectional view showing the structure of the quartz bell cover 112. FIG. 28A is a perspective view of the structure of the quartz bell cover 112 seen from above. FIG. 28 is a perspective view of the structure of the quartz bell cover 112 seen from below.

O:\87\87876.DOC -60- 1230401 圖29係顯示減壓系統之排氣系統構成之系統圖。 圖3〇A係顯示保持構件12〇構成之俯視圖。 圖30B係顯示保持構件120構成之側面圖。 圖31係顯示配置於加熱部24下方之旋轉驅動部28之構成 之縱剖面圖。 圖32係擴大顯示旋轉驅動部28之縱剖面圖。 圖33A係顯示托架冷卻機構234構成之橫剖面圖。 圖33B係顯示托架冷卻機構234構成之側面圖。 圖34係顯示旋轉位置檢測機構232構成之橫剖面圖。 圖35A係顯不旋轉位置檢測機構232之非檢測狀態之圖。 圖3 係顯示旋轉位置檢測機構232之檢測狀態之圖。 圖36A係顯示旋轉位置檢測機構232之受光元件268之輸 出信號S之波形圖。 圖36B為從旋轉位置判定電路27〇所輸出之脈衝信號p之 波圖。 圖37為說明控制電路所進行旋轉位置控制處理之流程圖。 圖38為從上方所見窗口 75、76之安裝處之橫剖面圖。 圖J 9係擴大顯示窗口 7 5之橫剖面圖。 圖40係擴大顯示窗口 76之橫剖面圖。 圖41A係顯示下部盒體1 〇2構成之俯視圖。 圖41B係顯示下部盒體1〇2構成之側面圖。 圖42A係顯示側面盒體1〇4構成之俯視圖。 圖42B係顯示側面盒體1〇4構成之前視圖。 圖42C係顯示側面盒體ι〇4構成之後視圖。O: \ 87 \ 87876.DOC -60- 1230401 Figure 29 is a system diagram showing the structure of the exhaust system of the pressure reduction system. FIG. 30A is a plan view showing the configuration of the holding member 12O. FIG. 30B is a side view showing the configuration of the holding member 120. FIG. 31 is a longitudinal sectional view showing the configuration of the rotation driving section 28 disposed below the heating section 24. As shown in FIG. FIG. 32 is a longitudinal sectional view showing the rotary driving unit 28 in an enlarged manner. Fig. 33A is a cross-sectional view showing the structure of the bracket cooling mechanism 234. Fig. 33B is a side view showing the structure of the bracket cooling mechanism 234. FIG. 34 is a cross-sectional view showing the configuration of the rotation position detecting mechanism 232. FIG. 35A is a diagram showing a non-detection state of the non-rotating position detecting mechanism 232. FIG. FIG. 3 is a diagram showing a detection state of the rotation position detecting mechanism 232. Fig. 36A is a waveform diagram showing an output signal S of the light receiving element 268 of the rotation position detecting mechanism 232. Fig. 36B is a wave chart of the pulse signal p output from the rotation position determining circuit 27o. Fig. 37 is a flowchart illustrating a rotational position control process performed by the control circuit. Figure 38 is a cross-sectional view of the installation location of the windows 75, 76 seen from above. Figure J 9 is a cross-sectional view of the enlarged display window 75. Fig. 40 is a cross-sectional view of the enlarged display window 76. Fig. 41A is a plan view showing the structure of the lower case body 102. Fig. 41B is a side view showing the structure of the lower case body 102. FIG. 42A is a plan view showing the configuration of the side box body 104. FIG. FIG. 42B shows a front view of the side box body 104. FIG. FIG. 42C is a rear view showing the constitution of the side box ι04.

O:\87\87876.DOC -61 - 1230401 圖42D係顯示側面盒體1〇4構成之左側視圖。 圖42E係顯示側面盒體1〇4構成之右側視圖。 圖43A係顯示上部盒體1〇6構成之仰視圖。 圖43B係顯示上部盒體1〇6構成之側面圖。 圖44A係顯示圓筒狀盒體1〇8構成之俯視圖。 圖44B係顯示圓筒狀盒體1〇8構成之側面縱剖面圖。 圖44C係顯示圓筒狀盒體1〇8構成之側面圖。 0 45係擴大顯示升降桿機構％之縱剖面圖。 圖46為擴大顯示升降桿機構3〇之密封構造之縱剖面圖。 圖47A係顯示使用圖2之基板處理裝置別，進行被處理基 板W之自由基氧化情形之側面圖及俯視圖。 圖47B係顯示圖47A之構成之俯視圖。 圖48係顯示使用基板處理裝置2〇，所進行之基板氧化處 理步驟之圖。 圖49係顯示根據本發明所使用之又以之膜厚測定方法之圖。 圖50係顯示根據本發明所使用之xps之膜厚測定方法之 其他圖。 圖5 1係概略地顯示藉由基板處理裝置2〇形成氧化膜之 際’所觀測到氧化膜厚成長之停滯現象之圖。 圖52A係顯示於矽基板表面之氧化膜形成過程i之圖。 圖52B係顯示於矽基板表面之氧化膜形成過程2之圖。 圖53係顯示於本發明第丨實施例中，所得到之氧化膜之漏 )¾電流特性之圖。 圖5 4 A為說明圖5 3之漏泡電流特性原因之圖。O: \ 87 \ 87876.DOC -61-1230401 Figure 42D shows the left side view of the side box 104. FIG. 42E is a right side view showing the configuration of the side box body 104. FIG. Fig. 43A is a bottom view showing the structure of the upper case body 106. FIG. 43B is a side view showing the structure of the upper case 106. FIG. FIG. 44A is a plan view showing the configuration of the cylindrical box body 108. FIG. FIG. 44B is a side longitudinal sectional view showing the configuration of the cylindrical case body 108. FIG. FIG. 44C is a side view showing the structure of the cylindrical case 108. FIG. 0 45 is a longitudinal sectional view showing enlarged% of the lifting rod mechanism. FIG. 46 is a longitudinal sectional view showing a sealing structure of the lift lever mechanism 30 in an enlarged manner. Fig. 47A is a side view and a plan view showing the radical oxidation of the substrate W to be processed using the substrate processing apparatus of Fig. 2; Fig. 47B is a plan view showing the structure of Fig. 47A. Fig. 48 is a diagram showing the substrate oxidation processing steps performed using the substrate processing apparatus 20. FIG. 49 is a diagram showing another film thickness measurement method used in accordance with the present invention. Fig. 50 is another diagram showing a method for measuring the film thickness of xps used in accordance with the present invention. Fig. 51 is a diagram schematically showing a stagnation phenomenon of the oxide film thickness growth observed when the oxide film is formed by the substrate processing apparatus 20. FIG. 52A is a diagram showing an oxide film forming process i on the surface of a silicon substrate. FIG. 52B is a diagram showing an oxide film formation process 2 on the surface of a silicon substrate. FIG. 53 is a graph showing current characteristics of the obtained oxide film in the first embodiment of the present invention. FIG. 5 4A is a diagram explaining the cause of the leakage current characteristic of FIG. 53.

O:\87\87876.DOC -62- 1230401 圖54B為說明圖53之漏洩電流特性原因之圖。 圖55A係顯示於基板處理裝置2〇所產生之氧化膜形成步 驟1之圖。 圖5 5 B係顯示於基板處理裝置2 〇所產生之氧化膜形成步 驟2之圖。 圖55C係顯示於基板處理裝置2〇所產生之氧化膜形成步 驟3之圖。 圖56係顯示於基板處理裝置2〇所使用之遠距離電衆源構 成之圖。 圖57為比較RF遠距離電漿與微波電漿特性之圖。 圖58為比較RF遠距離電漿與微波電漿特性之其他圖。 圖59A係顯示使用基板處理裝置2()所進行之氧化膜之氣 化處理之側面圖。 圖59B係顯示使用基板處 化處理之俯視圖 圖㈣係顯示使用遠距離電浆部27，以表2所示條件則 =基板處理裝置2〇在⑦基板上以熱氧化處理形成之η 厚之氧化膜，進行氮化時之前述氧化膜中之氮滚度分佈圖 佈：二顯示於相同氧化膜中之氮濃度分佈與氧濃心 固〇 1保顯示在本發 ^ ^〜佩吟_。 J 62係顯示根據氧化膜之遠距離電製之氮化時間與用 鼠/辰度之關係圖。 圖63係顯不氧化膜之氮化時間與氮之膜内分佈之關係【O: \ 87 \ 87876.DOC -62- 1230401 Figure 54B is a diagram explaining the cause of the leakage current characteristic of Figure 53. Fig. 55A is a diagram showing the oxide film forming step 1 generated in the substrate processing apparatus 20. FIG. 5B is a view showing an oxide film forming step 2 generated in the substrate processing apparatus 20. Fig. 55C is a view showing the oxide film forming step 3 generated in the substrate processing apparatus 20. FIG. 56 is a diagram showing the composition of a long-distance electric source used in the substrate processing apparatus 20. Figure 57 is a graph comparing the characteristics of RF long-range plasma and microwave plasma. Fig. 58 is another graph comparing the characteristics of RF long-range plasma and microwave plasma. Fig. 59A is a side view showing the vaporization treatment of the oxide film using the substrate processing apparatus 2 (). FIG. 59B is a plan view showing the use of a substrate treatment. FIG. 59B shows the use of a long-distance plasma unit 27, and the conditions shown in Table 2 = the substrate processing device 20. The η-thick oxidation formed on the ⑦ substrate by thermal oxidation treatment. Nitrogen roll distribution map of the aforementioned oxide film when nitriding is performed. Second, the nitrogen concentration distribution and oxygen concentration in the same oxide film are shown in the present document. ^^ ~ 佩恩 _. J 62 is a graph showing the relationship between the nitriding time and the rat / chen degree based on the long-distance electrical system of the oxide film. Figure 63 shows the relationship between the nitriding time of the non-oxidized film and the distribution of nitrogen in the film [

O:\87\87876.DOC -63 - 1230401 a 64係顯不根據氧化膜之氮化 膜之日門— 成之整個氧氮介 膜之日日ϋ之膜厚變動圖。 乳乳化 圖65係顯示隨著因本實施例之氧化膜氮化處理 膜厚增 力口圖〇 【圖式代表 10 11 12 12Λ 13 14 20 22 22a 22b 22c 22d 22e22g 24 符號說明】 半導體裝置 Si基板 基底氧化膜 氧氮化膜 高電介質膜 閘極電極 基板處理裝置 處理容器 前部 後部 底部 左側面 右側面 供給口 26 26a 26b 26c 加熱部 外線照射部 筐體 底部開口 邊緣部O: \ 87 \ 87876.DOC -63-1230401 a 64 is a graph showing the film thickness variation of the sundial of the entire oxygen-nitrogen film, which is not based on the nitride film of the oxide film. Emulsion diagram 65 is a diagram showing the thickness increase of the film thickness due to the nitridation treatment of the oxide film in this embodiment. [Schematic representation 10 11 12 12 Λ 13 14 20 22 22a 22b 22c 22d 22e22g 24 Symbol description] Si substrate for semiconductor device Base oxide film oxynitride film high dielectric film gate electrode substrate processing device processing container front rear bottom left side right side right side supply port 26 26a 26b 26c heating part outer line irradiation part enclosure bottom opening edge part

O:\87\87876.DOC -64- 1230401 27 遠距離電漿部 27a 氣體循環通路 27b 氣體入口 27c 氣體出口 27d 氟素樹脂加工 27e 離子過濾器 21A 區塊 27B 鐵氧體磁心 27C 電漿 28 旋轉驅動部 30 升降桿機構 32 排氣路徑 32a 開口部 32b 錐形部 32c 底部 32d 主排氣管 32e 排出口 32f 下部 32g 分流用排出口 34 氣體供給部 36 框 38 底部框 40,41 垂直框 40a 電纜線導管 O:\87\87876.DOC -65 - 1230401 41a 排氣導管 42 中間框 44 上部框 46 冷卻水供給部 48a，48b 電磁閥之排氣用閥 50 渦輪分子幫浦 50a 吐出管 51 真空管路 51a 分流管路 52 電源單位 57 UV燈控制器 58 托架 58 氣體管路 60 緊急停止開關 62 托架 64 溫度調整器 66 氣體箱 68 離子測量控制器 70 APC控制器 72 TMP控制器 74 排氣口 75 第1窗口 76 第2窗口 77 感應器單元 O:\87\87876.DOC -66- 1230401 80 室 80a 貫通孔 82 蓋子構件 84 製程空間（處理空間） 85 感應器單元 8 5 a〜8 5 c 壓力計 86、87 外線光源（紫外線光源） 88 透明窗 88a 密封面 88b 防護罩 89 密封構件（0環） 90 供給管路 91 鎖緊構件 92 供給口 93 氣體喷射喷嘴部 93al〜93an 射喷孔 93bl〜93b3 喷嘴板 93cl〜93c3 凹部 93cU 〜93d3 供給孔 94 搬送口 96 閘極閥 97a 第1質量控制器 97b 第2質量控制器 98 搬送自動機 O:\87\87876.DOC -67- 1230401 991〜995 氣體供給管路 100 石英塾圈 102 下部盒體 104 側面盒體 104a 正面 104b 背面 106 上部盒體 108 圓筒狀盒體 108a〜108c 凹部 108d 突起 110 底座 112 石英鐘罩 112a 突出部 112b 圓筒部 112c 頂板 112d 中空部 112e 梁部 112f 穿插孔 112g〜112i 輪轂 113 内部空間 114 SiC加熱器 114a 第1發熱部 114b，114c 第2、第3發熱部 114d 穿插孔 O:\87\87876.DOC -68- 1230401 114e 穿插孔 116 熱反射構件（反射器） 116a 穿插孔 118 SiC基板設置台（加熱構件） 119 高溫計 120 保持構件 120a〜120c 臂部 120d 保持構件 120e〜120g 輪轂 120i 倒角加工部 122 外殼 124 内部空間 126 陶瓷軸 128 馬達 128a 驅動軸 130 磁鐵聯結器 132 昇降臂 134 昇降轴 136 驅動部 138a〜138c 抵接銷 140 凸緣 142 中央？L 144 第1水路 146 第1凸緣 O:\87\87876.DOC -69- 1230401 146a L字形之連通孔 146b 階狀部 148 第2凸緣 150 第2水路 152 第1流入管路 154 第1流入口 156 流出管路 158 第1流出口 160 螺栓 162 安裝孔 164 溫度感應器 166a〜166f 電源纜線連接用端子 170 第2流入口 174 第2流出口 176 栓 178 位置決定孔 180 密封構件（〇環） 182 密封構件（0環） 184 密封構件（0環） 186 密封構件（0環） 188 密封構件（0環） 190 夾鉗機構 190a 外筒 190b 轴 O:\87\87876.DOC -70- 1230401 192 螺旋彈簧 193 螺母 195 墊片 196 發熱控制電路 197,199 L字形墊片 197a，199a 圓筒部 197b，199b 突出部 197c，197d 圓筒部 198 溫度調整器 201 幫浦 202 排氣管路 204 排氣管路 205 壓力計 206 閥 208 分歧管路 210 閥 211 可變隔膜 212 閥 214 壓力計 216 滿輪管路 218 逆止閥 220 隔膜 222 閥 230 托架 O:\87\87876 DOC -71 - 1230401 230a 冷卻水用之水路 230b 冷卻水供給孔 230c 冷卻水供給排出孔 230d 中央孑L 230e，230f 貫通孔 232 旋轉位置檢測機構 234 托架冷卻機構 236,237 陶瓷軸承 238 凸緣 240 螺栓 242 凸緣 244 間隔壁 246 排氣孔 248 從動側磁鐵 250 磁鐵罩 252 氛圍侧旋轉部 252a 下端部 254,255 轴承 256 驅動側磁鐵 257 傳達構件 258 旋轉檢測單元 260,261 狹縫板 262,263 光斷續器 264 軸承架 O:\87\87876.DOC -72- 1230401 266 發光元件 268 受光元件 268 受光元件 270 旋轉位置判定電路 272 透明石英 274 UV玻璃 276 窗口安裝部 277 小螺釘 278 第1窗框 280 密封構件 282 第2窗框 284 小螺釘 286 開口 292 透明石英 294 UV玻璃 296 窗口安裝部 297 小螺釘 298 第1窗框 300 密封構件（0環） 302 第2窗框 304 小螺釘 310 圓形開口 310a〜310c 凹部 310d 凹部 O:\87\87876.DOC -73 - 1230401 312 314a5314b 315 316 317 318 319 320〜322 324,325 326 327〜329 330 332 334 336 338 340 411 412 441 442 443 開口（長方形） 突起 階狀部 狹縫 開口 凹部 圓形 孔 長方形開口 階狀部 圓形子L 四角孑L 伸縮管 螺栓 連接構件 陶瓷蓋 蓋子構件 $夕基板 氧化膜 $夕基板 氧化膜 ZrSiOx O:\87\87876.DOC -74-O: \ 87 \ 87876.DOC -64- 1230401 27 Long-distance plasma unit 27a Gas circulation path 27b Gas inlet 27c Gas outlet 27d Fluoro resin processing 27e Ion filter 21A Block 27B Ferrite core 27C Plasma 28 Rotate Drive section 30 Lifting rod mechanism 32 Exhaust path 32a Opening section 32b Conical section 32c Bottom 32d Main exhaust pipe 32e Discharge outlet 32f Lower 32g Diversion outlet 34 Gas supply section 36 Frame 38 Bottom frame 40, 41 Vertical frame 40a Cable Line duct O: \ 87 \ 87876.DOC -65-1230401 41a Exhaust duct 42 Middle frame 44 Upper frame 46 Cooling water supply part 48a, 48b Exhaust valve for solenoid valve 50 Turbo molecular pump 50a Outlet tube 51 Vacuum line 51a Shunt line 52 Power supply unit 57 UV lamp controller 58 Bracket 58 Gas line 60 Emergency stop switch 62 Bracket 64 Temperature regulator 66 Gas box 68 Ion measurement controller 70 APC controller 72 TMP controller 74 Exhaust port 75 First window 76 Second window 77 Sensor unit O: \ 87 \ 87876.DOC -66- 1230401 80 Room 80a Through hole 82 Cover member 84 Process space ( Space) 85 sensor unit 8 5 a ~ 8 5 c pressure gauge 86, 87 external light source (ultraviolet light source) 88 transparent window 88a sealing surface 88b protective cover 89 sealing member (0 ring) 90 supply line 91 locking member 92 Supply port 93 Gas injection nozzle section 93al ~ 93an Injection hole 93bl ~ 93b3 Nozzle plate 93cl ~ 93c3 Concave part 93cU ~ 93d3 Supply hole 94 Transfer port 96 Gate valve 97a First quality controller 97b Second quality controller 98 Transport robot O: \ 87 \ 87876.DOC -67- 1230401 991 ~ 995 Gas supply pipe 100 Quartz ring 102 Lower case 104 Side case 104a Front 104b Back 106 Upper case 108 Cylindrical case 108a ~ 108c Recess 108d Protrusion 110 Base 112 Quartz bell cover 112a Protrusion 112b Cylindrical section 112c Top plate 112d Hollow section 112e Beam section 112f Insertion hole 112g ~ 112i Hub 113 Internal space 114 SiC heater 114a First heating section 114b, 114c Second and third heating 114d through hole O: \ 87 \ 87876.DOC -68- 1230401 114e through hole 116 heat reflecting member (reflector) 116a through hole 118 SiC base Setting table (heating member) 119 pyrometer 120 holding member 120a ~ 120c arm 120d holding member 120e ~ 120g hub 120i chamfered portion 122 housing 124 internal space 126 ceramic shaft 128 motor 128a drive shaft 130 magnet coupling 132 lift arm 134 Lifting shaft 136 Drive sections 138a ~ 138c abut the center of the pin 140 flange 142? L 144 1st waterway 146 1st flange O: \ 87 \ 87876.DOC -69- 1230401 146a L-shaped communication hole 146b Stepped portion 148 2nd flange 150 2nd waterway 152 1st inflow pipe 154 1st Inflow port 156 Outflow line 158 First outflow port 160 Bolt 162 Mounting hole 164 Temperature sensor 166a to 166f Power cable connection terminal 170 Second inflow port 174 Second outflow port 176 Plug 178 Position determination hole 180 Sealing member (〇 Ring) 182 seal member (0 ring) 184 seal member (0 ring) 186 seal member (0 ring) 188 seal member (0 ring) 190 clamp mechanism 190a outer cylinder 190b shaft O: \ 87 \ 87876.DOC -70- 1230401 192 coil spring 193 nut 195 washer 196 heating control circuit 197,199 L-shaped washer 197a, 199a cylindrical portion 197b, 199b protruding portion 197c, 197d cylindrical portion 198 temperature regulator 201 pump 202 exhaust pipe 204 exhaust Line 205 Pressure gauge 206 Valve 208 Branch line 210 Valve 211 Variable diaphragm 212 Valve 214 Pressure gauge 216 Full line 218 Check valve 220 Diaphragm 222 Valve 230 Bracket O: \ 87 \ 87876 DOC -71-1230401 23 0a Water channel for cooling water 230b Cooling water supply hole 230c Cooling water supply discharge hole 230d Central 孑 L 230e, 230f Through hole 232 Rotating position detection mechanism 234 Bracket cooling mechanism 236,237 Ceramic bearing 238 Flange 240 Bolt 242 Flange 244 Partition wall 246 Exhaust hole 248 Driven side magnet 250 Magnet cover 252 Atmosphere side rotation part 252a Lower end part 254,255 Bearing 256 Drive side magnet 257 Transmission member 258 Rotation detection unit 260,261 Slot plate 262,263 Photointerrupter 264 Bearing frame O: \ 87 \ 87876.DOC -72- 1230401 266 Light-emitting element 268 Light-receiving element 268 Light-receiving element 270 Rotation position determination circuit 272 Transparent quartz 274 UV glass 276 Window mounting portion 277 Small screw 278 First window frame 280 Sealing member 282 Second window frame 284 Small screw 286 opening 292 transparent quartz 294 UV glass 296 window mounting part 297 small screw 298 first window frame 300 sealing member (0 ring) 302 second window frame 304 small screw 310 circular opening 310a ~ 310c recess 310d recess O: \ 87 \ 87876.DOC -73-1230401 312 314a5314b 315 316 317 318 319 320 ~ 322 3 24,325 326 327 to 329 330 332 334 336 338 340 411 412 441 442 443 Opening (rectangular) Protrusion stepped slot Slot opening Concave round hole Rectangular opening stepped section round L Corner corner L Telescopic tube bolt connection member ceramic cover Lid member $ xi substrate oxide film $ xi substrate oxide film ZrSiOx O: \ 87 \ 87876.DOC -74-

Claims (1)

1230401 拾、申請專利範園·· l 一種基板處理裝置，其特徵係包含： 内部劃分有處理空間之處理容器； 將被插入於前述處理容器之被處理基板加熱至特定溫 度之加熱部； /有於相對前述加熱部之位置支持前述被處理基板之 複數個’部，及於一端支持前述複數個臂部而另一端則 被穿插於前述加熱部之軸之保持構件； 及轉動驅動該保持構件之軸之轉動驅動手段。 2.如申請專利範圍第丨項之基板處理裝置，其中 前述複數個臂部係由透明石英所形成。 3·如申請專利範圍第丨項之基板處理裝置，其中 前述複數個臂部係包含以120度間隔在水平方向成放 射狀延伸之3支臂部。 4·如申清專利範圍第2項之基板處理裝置，其中 W述複數個臂部係包含以12〇度間隔在水平方向成放 射狀延伸之3支臂部。 5 ·如申請專利範圍第丨項之基板處理裝置，其中 前述複數個臂部係具有點接觸前述被處理基板之突 起0 6.如申請專利範圍第2項之基板處理裝置，其中 前述複數個臂部係具有點接觸前述被處理基板之突 起。 7 ·如申請專利範圍第3項之基板處理裝置，其中 OA87\87876.DOC 1230401 j述複數個臂部係具有點接觸前述被理 申明專利範圍第1項之基板處理裝置，其t 前述軸係由不透明石英所形成。 9·如申請專利範圍第1項之基板處理裝置，其中 前述軸係藉由陶莞製之軸承可旋轉地被支持。 如申明專利範圍第丨項之基板處理裝置，其中具備 檢測前述軸之旋轉位置之檢測手段； 及根據來自該檢測手段之信號，判定複數個臂部之旋 ㈣置位於不會與進行上述被處理基板搬送之搬送手段 及幵降前述被處理基板之升降桿機構干涉之位置之判定 手段。 11.如申請專利範圍第10項之基板處理裝置，其中 前述檢測手段係檢測出設置於前述保持構件之軸之外 周之倒角加工部之位置。 12·如申請專利範圍第11項之基板處理裝置，其中 前述檢測手段係包含設置於前述保持構件之轴之半徑 方向之發光元件、及透過前述軸而設置於相對於前述發 光元件位置之受光元件。 1 3·如申請專利範圍第12項之基板處理裝置，其中 岫述判疋手段係於來自前述發光元件之光通過前述軸 之倒角加工部而由前述受光元件所接收時，判定上述複 數個臂部之旋轉位置位力不會與進行上述被處理基板搬 送之搬送手段及昇降前述被處理基板之升降桿機構干涉 之位置。 O:\87\87876.DOC -2-1230401 Patent application park ·· l A substrate processing device, which includes: a processing container with a processing space divided therein; a heating section that heats a substrate to be processed inserted into the processing container to a specific temperature; A plurality of 'parts' supporting the substrate to be processed at positions opposite to the heating part, and a holding member which supports the plurality of arm parts at one end and the other end which is inserted into the shaft of the heating part; Means of driving the shaft. 2. The substrate processing apparatus according to item 丨 of the application, wherein the plurality of arms are formed of transparent quartz. 3. The substrate processing apparatus according to item 丨 of the patent application scope, wherein the plurality of arm portions include three arm portions extending in a horizontal direction at intervals of 120 degrees. 4. The substrate processing apparatus according to item 2 of the patent application, wherein the plurality of arms include three arms extending horizontally in a radial direction at an interval of 120 degrees. 5 · If the substrate processing device according to the scope of the patent application, the aforementioned plurality of arms are provided with protrusions that point contact with the substrate to be processed. 0. If the substrate processing device according to the scope of the patent application, claim 2, the aforementioned multiple arms. The part has protrusions that point-contact the substrate to be processed. 7 · If the substrate processing device of the third scope of the patent application, OA87 \ 87876.DOC 1230401 j, the plurality of arms are provided with the substrate processing device of the first scope of the patent claim, which is t Made of opaque quartz. 9. The substrate processing apparatus according to item 1 of the patent application range, wherein the aforementioned shaft system is rotatably supported by a bearing made of ceramic. For example, the substrate processing device of the patent scope item 丨 has a detection means for detecting the rotation position of the aforementioned shaft; and based on the signal from the detection means, it is determined that the rotation of the plurality of arms is not related to the above-mentioned processing. The substrate conveying means and the determining means for lowering the position where the lifter mechanism of the substrate to be processed interferes. 11. The substrate processing apparatus according to claim 10, wherein the detection means detects a position of a chamfering processing portion provided on an outer periphery of an axis of the holding member. 12. The substrate processing apparatus according to item 11 of the scope of patent application, wherein the detection means includes a light-emitting element provided in a radial direction of an axis of the holding member and a light-receiving element provided at a position relative to the light-emitting element through the axis. . 1 3. If the substrate processing device according to item 12 of the scope of patent application, the method for describing the judgment is to judge the plurality of light when the light from the light emitting element is received by the light receiving element through the chamfering processing section of the shaft. The position where the rotational force of the arm does not interfere with the conveyance means for carrying out the substrate to be processed and the lifting rod mechanism for lifting and lowering the substrate to be processed. O: \ 87 \ 87876.DOC -2-
TW092126228A 2002-09-24 2003-09-23 Substrate processing equipment TWI230401B (en)

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